Laser processing of sapphire substrate and related applications

- Corning Incorporated

A method of laser processing a material to form a separated part. The method includes focusing a pulsed laser beam into a laser beam focal line, viewed along the beam propagation direction, directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a hole or fault line along the laser beam focal line within the material, and directing a defocused carbon dioxide (CO2) laser from a distal edge of the material over the plurality of holes to a proximal edge of the material.

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Description
RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No. 61/917,082 filed on Dec. 17, 2013, and the benefit of U.S. Provisional Application No. 62/022,890 filed on Jul. 10, 2014; the entire disclosures of which are incorporated herein by reference.

BACKGROUND

The area of laser processing of materials encompasses a wide variety of applications that involve cutting, drilling, milling, welding, melting, etc. and different types of materials. Among these applications, one that is of particular interest is cutting or separating parts from different types of substrate materials, such as separating arbitrary shapes out of sapphire. Sapphire possesses exceptional hardness and toughness, properties that make it very resistant to scratching, and it is also highly transparent to wavelengths of light between 150 nm and 5500 nm.

Sapphire is used in several applications that rely on its unique and exceptional combination of electrical, mechanical, thermal, and optical properties. These applications include infrared optical components, such as in scientific instruments, high-durability windows, barcode scanners, wristwatch crystals and movement bearings, and very thin electronic wafers, which are used as the insulating substrates of special-purpose solid-state electronics (most of which are integrated circuits). Sapphire is also used in the semiconductor industry as a non-conducting substrate for the growth of devices based on gallium nitride (GaN). In particular, sapphire has low electrical conductivity, but a relatively high thermal conductivity. Thus, sapphire provides good electrical insulation, while at the same time helping to conduct away the significant heat that is generated in all operating integrated circuits. More recently, it has been offered as an alternative material for smartphone camera windows, screen cover and touch applications in consumer electronics products.

Because sapphire is very hard, one of the major challenges in manufacturing parts out of this substrate material is the cutting process. Typically, cutting can be achieved by first using a diamond-tipped blade to scribe a pattern in the substrate. After that, the scribed profile is either subjected to a mechanical force that propagates the crack into the substrate and along the traced profile to separate the part completely, or scribing is followed by a second pass of the circular diamond blade to cut through the substrate. The diamond blade has a small but finite width and the separation process reserves a “street” (typically greater than about 40 μm) between two parts to be separated to account for the width of the diamond blade. To maintain the quality of the edge of the part separated from the substrate and also to avoid catastrophic and uncontrolled cracking of the substrate, the diamond tip blade must be operated at a low speed, which prolongs the separation process. Also, because of the abrasion, the diamond tips on the blade wear out and must be replaced often—as much as one blade per wafer, which slows down the manufacturing process and increases costs. Finally, the mechanical scribing process causes cracks, which can damage the substrate and reduce yields (typical yields are claimed to be about 70%).

Another challenge regarding sapphire cutting and processing is related to shapes of separated parts. Due to the crystalline nature of sapphire, cleavage and separation preferentially occur in straight lines aligned with one of the crystal planes. However, this same feature makes it difficult to cut and separate sapphire parts having more complex shapes. For example, when separating a circular shape out of a square substrate, depending on the induced stress and the crystal alignment to the circular shape, crack propagation can deviate from the intended circular path and instead occur along a path of least resistance following one of the structural crystal planes.

From process development and cost perspectives, there are many opportunities for improvement in cutting and separation of sapphire substrates. It is of great interest to have a faster, cleaner, cheaper, more repeatable and more reliable method of sapphire separation than what is currently practiced in the market today. Among several alternative technologies, laser separation has been tried and demonstrated using different approaches. The techniques range from: 1) actual removal of material between the boundaries of the desired part (or parts) and its surrounding substrate matrix; 2) creation of defects within the bulk of the material to weaken or seed it with cracking initiation points along the perimeter of the desired shape profile followed by a secondary breaking step; and 3) propagation of an initial crack by thermal stress separation. These laser cutting processes have demonstrated the potential economic and technical advantages, such as precision, good edge finish, and low residual stress compared to competing technologies (mechanical scribing and breaking, high pressure water jet and ultrasonic milling, etc).

There is nevertheless a continuing need for an improved process for cutting and separating arbitrary shapes of sapphire.

SUMMARY

The embodiments disclosed herein relate to a laser process for cutting and separating arbitrary shapes from sapphire and other substrate materials. The developed laser method can be tailored for manual separation of the parts from the substrate or full laser separation by thermally stressing the desired profile. The method involves the utilization of an ultra-short pulse laser to establish a fault line in the substrate consistent with the shape of the part that one desires to separate from the substrate. The fault line defines a path of preferred crack propagation that facilitates separation of a part having a desired shape while avoiding errant crack propagation and damage in other directions. The ultra-short laser pulse(s) may be optionally followed by a CO2 laser or other source of thermal stress to effect fully automated separation of the part from the substrate.

In one embodiment, a method of laser cutting a material to form a separated part includes focusing a pulsed laser beam into a laser beam focal line, directing the laser beam focal line into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a hole or defect line along the laser beam focal line within the material, translating the material or the laser beam relative to one another, thereby forming a plurality of defect lines in the material with the laser, and directing a IR laser beam over the plurality of holes or defect lines. The laser beam focal line can be oriented along a beam propagation direction. The material can be sapphire.

A pulse duration of the pulsed laser beam can be in a range of between greater than about 1 picosecond and less than about 100 picoseconds, or in a range of between greater than about 5 picoseconds and less than about 20 picoseconds. A repetition rate of the pulsed laser beam can be in a range of between 1 kHz and 2 MHz, or a range of between 10 kHz and 650 kHz. The pulsed laser beam can have an average laser power measured, at the material, greater than 40 μJ per mm thickness of material. The pulses can be produced in bursts of at least two pulses. Pulses within the burst can be separated by a duration in a range of between 1 nsec and 50 nsec, or in a range of between 10 nsec and 30 nsec, or in a range between 15 nsec and 25 nsec. Multiple bursts can be applied to the material, where each burst includes two or more pulses and the burst repetition frequency is in a range of between about 1 kHz and about 2000 kHz.

The pulsed laser beam can have a wavelength selected such that the material is substantially transparent at this wavelength. The laser beam focal line can have a length in a range of between about 0.1 mm and about 100 mm, or in a range of between about 0.1 mm and about 10 mm. The laser beam focal line can have an average spot diameter in a range of between about 0.1 μm and about 5 μm.

The method can further include directing the IR laser from a proximal edge of the material to a tangential edge of the part, or from a distal edge of the material to a tangential edge of the part, to separate the part from the material. Directing the IR laser beam can also include directing a CO2 laser beam. The IR laser beam can be defocused to a spot size in a range of between about 2 mm and about 20 mm. The IR laser beam can be directed from a distal edge of the material to a proximal edge of the material.

An article includes an edge having a series of defect lines, where each defect line extends at least 250 μm, the defect lines are less than 5 μm in diameter, the edge has a surface roughness Ra<0.5 μm, and a subsurface damage of a glass edge is <100 μm. The subsurface damage of the glass edge can also be <75 μm. The defect lines can extend through the full thickness of the article. A distance between the defect lines can be greater than 0.5 μm and less than or equal to about 15 μm, and the article can be less than 1.5 mm thick. The article can include sapphire. The article can also be a circular disk or comprise a glass substrate with a sapphire layer attached thereto. The glass substrate can be from 100 microns to 1 mm thick, and the sapphire layer can be from 1 micron to 600 microns thick.

In yet another embodiment, a method of laser cutting a material includes: (i) focusing a pulsed laser beam into a laser beam focal line; (ii) directing the laser beam focal line into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material; (iii) repeatedly performing (i) and (ii) to form a fault line within the material, the fault line including a plurality of the defect lines; and (iv) directing an IR laser beam over the fault line. The fault line can be linear, curved or circular. Directing the IR laser beam can fracture the material along the fault line.

These embodiments have many advantages including full separation of parts being cut with reduced laser power, reduced subsurface defects, increased process cleanliness, creation of complex profiles and shapes in different sizes, and elimination of process steps.

The present disclosure extends to:

  • A method of laser cutting a material comprising:
    • focusing a pulsed laser beam into a laser beam focal line;
    • directing the laser beam focal line into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material;
    • translating the material or the laser beam relative to one another, thereby forming a plurality of defect lines in the material with the laser; and
  • directing an IR laser beam over the plurality of defect lines.

The present disclosure extends to:

An article comprising sapphire, the article including an edge having a series of defect lines where each defect line extends at least 250 μm, the defect lines are less than 5 μm in diameter, the edge has a surface roughness Ra<0.5 μm, and the subsurface damage of the edge is <100 μm.

The present disclosure extends to:

  • A method of laser cutting a material comprising:
    • (i) focusing a pulsed laser beam into a laser beam focal line;
    • ii) directing the laser beam focal line into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material;
    • (iii) repeatedly performing (i) and (ii) to form a fault line within the material, the fault line including a plurality of the defect lines; and
  • (iv) directing an IR laser beam over the fault line.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing will be apparent from the following more particular description of example embodiments, as illustrated in the accompanying drawings in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating embodiments.

FIGS. 1A-1C are: FIG. 1A: an illustration of a laser creating a fault line through the sample; FIG. 1B: an illustration of an edge with defect line after separation; FIG. 1C: a photograph of a separated edge.

FIGS. 2A and 2B are illustrations of positioning of the laser beam focal line, i.e., the processing of a material transparent for the laser wavelength due to the induced absorption along the focal line.

FIG. 3A is an illustration of an optical assembly for laser drilling.

FIGS. 3B-1-3B-4 are an illustration of various possibilities to process the substrate by differently positioning the laser beam focal line relative to the substrate.

FIG. 4 is an illustration of a second optical assembly for laser drilling.

FIGS. 5A and 5B are illustrations of a third optical assembly for laser drilling.

FIG. 6 is a schematic illustration of a fourth optical assembly for laser drilling.

FIGS. 7A-7C are illustrations of different regimes for laser processing of materials. FIG. 7A: unfocused laser beam; FIG. 7B: condensed laser beam with spherical lens; FIG. 7C: condensed laser beam with axicon or diffractive Fresnel lens.

FIG. 8A depicts laser emission as a function of time for a picosecond laser. Each emission is characterized by a pulse “burst” which may contain one or more sub-pulses. Times corresponding to pulse duration, separation between pulses, and separation between bursts are illustrated.

FIG. 8B is a photograph showing an edge image of a straight cut strip of 0.55 mm thick sapphire substrate.

FIG. 9 is a photograph showing sapphire buttons separated from a 0.55 mm thick sample. Some buttons were manually separated, others partially separated with the aid of a CO2 laser and some were fully separated with the CO2 laser.

FIGS. 10A and 10B are illustrations of a fault line perforation sequence, including circle and release lines, created with a picosecond laser (FIG. 10A), and subsequent CO2 laser tracing (FIG. 10B) to release the button out of the original plate.

 DETAILED DESCRIPTION

A description of example embodiments follows.

The disclosed embodiments provide a laser process for precision cutting and separation of arbitrary shapes out of substrates that contain sapphire. The sapphire-containing substrate may be pure sapphire, a composite of sapphire with one or more other materials, a sapphire blend, a sapphire-coated material and material having sapphire integrated therewith. In one embodiment, the sapphire-containing substrate is glass with a sapphire layer attached, bonded, laminated, or coated thereon. References to sapphire, sapphire substrates and the like herein are contemplated to extend to sapphire-containing substrates generally. The process separates parts in a controllable fashion with negligible debris, minimum defects and low subsurface damage to the edges to preserve part strength. The laser cutting method is well suited for materials that are transparent to the selected laser wavelength. The materials should preferably be substantially transparent to the selected laser wavelength (i.e., absorption less than about 10%, and preferably less than about 1% per μm of material depth). Demonstrations of the method have been made using 0.55 mm thick sheets of C-axis cut sapphire polished on both sides.

The process fundamental step is to use an ultra-short laser pulse to create a fault line that delineates the desired shape of the separated part. The fault line establishes a path of least resistance for crack propagation and hence for separation and detachment of the shape from its substrate matrix. The laser separation method can be tuned and configured to enable manual separation, partial separation or total separation of sapphire shapes out of the original substrate.

According to laser methods described below, in a single pass, a laser can be used to create highly controlled full line perforations through a substrate or material, with extremely little (<75 μm, often <50 μm) subsurface damage and debris generation. This is in contrast to the typical use of spot-focused laser to ablate material, where multiple passes are often necessary to completely perforate the glass thickness, large amounts of debris are formed from the ablation process, and more extensive sub-surface damage (>100 μm) and edge chipping occur.

As used herein, subsurface damage refers to the maximum size (e.g. length, width, diameter) of structural imperfections in the perimeter surface of the part separated from the substrate or material subjected to laser processing in accordance with the present disclosure. Since the structural imperfections extend from the perimeter surface, subsurface damage may also be regarded as the maximum depth from the perimeter surface in which damage from laser processing in accordance with the present disclosure occurs. The perimeter surface of the separated part may be referred to herein as the edge or edge surface of the separated part. The structural imperfections may be cracks or voids and represent points of mechanical weakness that promote fracture or failure of the part separated from the substrate or material. By minimizing the size of subsurface damage, the present method improves the structural integrity and mechanical strength of separated parts. Sub-surface damage may be limited to the order of 100 μm in depth or less, or 75 μm in depth or less, or 60 μm in depth or less, or 50 μm in depth or less, and the cuts may produce only low debris.

Thus, it is possible to create microscopic (i.e., <0.5 μm and >100 nm in diameter) elongated defect lines (also referred to herein as perforations or damage tracks) in transparent material using one or more high energy pulses or one or more bursts of high energy pulses. The perforations represent regions of the substrate material modified by the laser. The laser-induced modifications disrupt the structure of the substrate material and constitute sites of mechanical weakness. Structural disruptions include compaction, melting, dislodging of material, rearrangements, and bond scission. The perforations extend into the interior of the substrate material and have a cross-sectional shape consistent with the cross-sectional shape of the laser (generally circular). The average diameter of the perforations may be in the range from 0.1 μm to 50 μm, or in the range from 1 μm to 20 μm, or in the range from 2 μm to 10 μm, or in the range from 0.1 μm to 5 μm. In some embodiments, the perforation is a “through hole”, which is a hole or an open channel that extends from the top to the bottom of the substrate material. In some embodiments, the perforation may not be a continuously open channel and may include sections of solid material dislodged from the substrate material by the laser. The dislodged material blocks or partially blocks the space defined by the perforation. One or more open channels (unblocked regions) may be dispersed between sections of dislodged material. The diameter of the open channels is may be <1000 nm, or <500 nm, or <400 nm, or <300 nm or in the range from 10 nm to 750 nm, or in the range from 100 nm to 500 nm. The disrupted or modified area (e.g., compacted, melted, or otherwise changed) of the material surrounding the holes in the embodiments disclosed herein, preferably has diameter of <50 μm (e.g., <10 μm).

The individual perforations can be created at rates of several hundred kilohertz (several hundred thousand perforations per second, for example). Thus, with relative motion between the laser source and the material the perforations can be placed adjacent to one another (spatial separation varying from sub-micron to several microns as desired). This spatial separation is selected in order to facilitate cutting.

In the first step, the sapphire substrate, or a glass substrate with a sapphire layer thereon, is irradiated with an ultra-short pulsed laser beam that is condensed into a high aspect ratio line focus that penetrates through the thickness of the substrate or through the thickness of the glass and the sapphire layer situated thereon. Where a glass substrate has a sapphire layer attached thereon, the glass substrate can be 100 μm to 1 mm thick, for example, and the sapphire thickness range from thin coatings to thicker 600 μm layers, and a sapphire layer thickness greater than 600 μm can be expected to become excessively brittle. Within this volume of high energy density produced by using the ultra-short pulsed laser beam, the material is modified via nonlinear effects. The nonlinear effects provide a mechanism of transferring energy from the laser beam to the substrate to enable formation of a vertical defect line. It is important to note that without this high optical intensity nonlinear absorption is not triggered. Below the intensity threshold for nonlinear effects, the material is transparent to the laser radiation and remains in its original state. By scanning the laser over a desired line or path, a narrow fault line (a few microns wide, formed of a plurality of vertical defect lines) is created that defines the perimeter or shape of the part to be separated from the substrate.

Nonlinear effects induced by the high intensity laser beam include multi-photon absorption (MPA) in the transparent material. MPA is the simultaneous absorption of multiple (two or more) photons of identical or different frequencies in order to excite a material from a lower energy state (usually the ground state) to a higher energy state (excited state). The excited state may be an excited electronic state or an ionized state. The energy difference between the higher and lower energy states of the material is equal to the sum of the energies of the two or more photons. MPA is a nonlinear process that is generally several orders of magnitude weaker than linear absorption. It differs from linear absorption in that the strength of MPA depends on the square or higher power of the light intensity, thus making it a nonlinear optical process. At ordinary light intensities, MPA is negligible. If the light intensity (energy density) is extremely high, such as in the region of focus of a laser source (particularly a pulsed laser source), MPA becomes appreciable and leads to measurable effects in the material within the region where the energy density of the light source is sufficiently high. Within the focal region, the energy density may be sufficiently high to result in ionization.

At the atomic level, the ionization of individual atoms has discrete energy requirements. Several elements commonly used in glass (e.g., Si, Na, K) have relatively low ionization energies (˜5 eV). Without the phenomenon of MPA, a wavelength of about 248 nm would be required to create linear ionization at ˜5 eV. With MPA, ionization or excitation between states separated in energy by ˜5 eV can be accomplished with wavelengths longer than 248 nm. For example, photons with a wavelength of 532 nm have an energy of ˜2.33 eV, so two photons with wavelength 532 nm can induce a transition between states separated in energy by ˜4.66 eV in two-photon absorption (TPA), for example. Thus, atoms and bonds can be selectively excited or ionized in the regions of a material where the energy density of the laser beam is sufficiently high to induce nonlinear TPA of a laser wavelength having half the required excitation energy, for example.

MPA can result in a local reconfiguration and separation of the excited atoms or bonds from adjacent atoms or bonds. The resulting modification in the bonding or configuration can result in non-thermal ablation and removal of matter from the region of the material in which MPA occurs. This removal of matter creates a structural defect (e.g. a defect line, damage line, or “perforation”) that mechanically weakens the material and renders it more susceptible to cracking or fracturing upon application of mechanical or thermal stress. By controlling the placement of perforations, a contour or path along which cracking occurs can be precisely defined and precise micromachining of the material can be accomplished. The contour defined by a series of perforations may be regarded as a fault line and corresponds to a region of structural weakness in the material. In one embodiment, micromachining includes separation of a part from the material processed by the laser, where the part has a precisely defined shape or perimeter determined by a closed contour of perforations formed through MPA effects induced by the laser. As used herein, the term closed contour refers to a perforation path formed by the laser line, where the path intersects with itself at some location. An internal contour is a path formed where the resulting shape is entirely surrounded by an outer portion of material.

Once the fault line with vertical defects is created, separation can occur via: 1) manual or mechanical stress on or around the fault line; the stress or pressure should create tension that pulls both sides of the fault line apart and breaks the areas that are still bonded together; 2) using a heat source to create a stress zone around the fault line to put the vertical defect lines in tension and inducing partial or total self-separation. In both cases, separation depends on process parameters such as laser scan speed, laser power, parameters of lenses, pulse width, repetition rate, etc.

The present application provides a laser method and apparatus for precision cutting and separation of arbitrary shapes out of sapphire or other substrates in a controllable fashion, with negligible debris and minimum damage to the edges of the separated part. Damage to the edges of the separated part is a common feature of prior art cutting processes and leads to a weakening of the separated part. The present method avoids edge damage to preserve the strength of the separated part.

The developed laser method relies on the transparency of the substrate material to the laser wavelength in the linear regime of power (low laser intensity). Transparency reduces or prevents damage to the surface of the substrate as well as subsurface damage away from the region of high intensity defined by the focused laser beam. One feature of this process is the high aspect ratio of the defect line (also referred to herein as a perforation or damage track) created by the ultra-short pulsed laser. It allows creation of a defect line that extends from the top surface to the bottom surface of the substrate material. The defect line can be created by a single pulse or single burst of pulses and if desired, additional pulses or bursts can be used to increase the extension of the affected area (e.g. depth and width).

As illustrated in FIGS. 1A-1C, the method to cut and separate sapphire is essentially based on creating a fault line 110 formed of a plurality of vertical defect lines 120 in the substrate material 130 with an ultra-short pulsed laser 140. Depending on the material properties (absorption, CTE, stress, composition, etc.) and laser parameters chosen for processing the material 130, the creation of a fault line 110 alone can be enough to induce self-separation. In this case, no secondary separation processes, such as tension/bending forces, heating, or CO2 laser, are necessary.

In some cases, the created fault line is not enough to separate the part spontaneously and a secondary step may be necessary. If so desired, a second laser can be used to create thermal stress to separate it, for example. In the case of sapphire, separation can be achieved, after the creation of a fault line, by application of mechanical force or by using a thermal source (e.g. an infrared laser, for example a CO2 laser) to create thermal stress and force the part to separate from the substrate. Another option is to have the CO2 laser only start the separation and then finish the separation manually. The optional CO2 laser separation is achieved, for example, with a defocused cw laser emitting at 10.6 μm and with power adjusted by controlling its duty cycle. Focus change (i.e., extent of defocusing up to and including focused spot size) is used to vary the induced thermal stress by varying the spot size. Defocused laser beams include those laser beams that produce a spot size larger than a minimum, diffraction-limited spot size on the order of the size of the laser wavelength. For example, defocused spot sizes of about 7 mm, 2 mm and 20 mm can be used for CO2 lasers, for example, whose diffraction-limited spot size is much smaller given the emission wavelength of 10.6 μm. Distance between adjacent defect lines 120 along the direction of the fault lines 110 can, for example, be in range from 0.25 μm to 50 μm, or in the range from 0.50 μm to about 20 μm, or in the range from 0.50 μm to about 15 μm, or in the range from 0.50 μm to 10 μm, or in the range from 0.50 μm to 3.0 μm or in the range from 3.0 μm to 10 μm.

There are several methods to create the defect line. The optical method of forming the line focus can take multiple forms, using donut-shaped laser beams and spherical lenses, axicon lenses, diffractive elements, or other methods to form the linear region of high intensity. The type of laser (picosecond, femtosecond, etc.) and wavelength (IR, green, UV, etc.) can also be varied, as long as sufficient optical intensities are reached in the region of focus to create breakdown of the substrate material (e.g. sapphire or glass with a sapphire layer thereon) through nonlinear optical effects. A sapphire layer can be bonded onto a glass substrate, for example. Glass substrates can include high-performance glass such as Corning's Eagle X6®, or inexpensive glass such as soda-lime glass, for example.

In the present application, an ultra-short pulsed laser is used to create a high aspect ratio vertical defect line in a consistent, controllable and repeatable manner. The details of the optical setup that enables the creation of this vertical defect line are described below, and in U.S. Application No. 61/752,489 filed on Jan. 15, 2013, the entire contents of which are incorporated by reference as if fully set forth herein. The essence of this concept is to use an axicon lens element in an optical lens assembly to create a region of high aspect ratio, taper-free microchannels using ultra-short (picoseconds or femtosecond duration) Bessel beams. In other words, the axicon condenses the laser beam into a high intensity region of cylindrical shape and high aspect ratio (long length and small diameter) in the substrate material. Due to the high intensity created with the condensed laser beam, nonlinear interaction of the electromagnetic field of the laser and the substrate material occurs and the laser energy is transferred to the substrate to effect formation of defects that become constituents of the fault line. However, it is important to realize that in the areas of the material where the laser energy intensity is not high (e.g., substrate surface, volume of substrate surrounding the central convergence line), the material is transparent to the laser and there is no mechanism for transferring energy from the laser to the material. As a result, nothing happens to the substrate when the laser intensity is below the nonlinear threshold.

Turning to FIGS. 2A and 2B, a method of laser drilling a material includes focusing a pulsed laser beam 2 into a laser beam focal line 2b, viewed along the beam propagation direction. Laser beam focal line 2b can be created by several ways, for example, Bessel beams, Airy beams, Weber beams and Mathieu beams (i.e., non-diffractive beams), whose field profiles are typically given by special functions that decay more slowly in the transverse direction (i.e. direction of propagation) than the Gaussian function. As shown in FIG. 3A, laser 3 (not shown) emits laser beam 2, which has a portion 2a incident to optical assembly 6. The optical assembly 6 turns the incident laser beam into a laser beam focal line 2b on the output side over a defined expansion range along the beam direction (length l of the focal line). The planar substrate 1 is positioned in the beam path to at least partially overlap the laser beam focal line 2b of laser beam 2. Reference 1a designates the surface of the planar substrate facing the optical assembly 6 or the laser, respectively, and reference 1b designates the reverse surface of substrate 1. The substrate or material thickness (in this embodiment measured perpendicularly to the planes 1a and 1b, i.e., to the substrate plane) is labeled with d.

As FIG. 2A depicts, substrate 1 (or the glass layered with the sapphire substrate material thereon) is aligned substantially perpendicular to the longitudinal beam axis and thus behind the same focal line 2b produced by the optical assembly 6 (the substrate is perpendicular to the plane of the drawing). Viewed along the beam direction, the substrate is positioned relative to the focal line 2b in such a way that the focal line 2b starts before the surface 1a of the substrate and stops before the surface 1b of the substrate, i.e. still focal line 2b terminates within the substrate and does not extend beyond surface 1b.In the overlapping area of the laser beam focal line 2b with substrate 1, i.e. in the substrate material covered by focal line 2b, the laser beam focal line 2b generates (assuming suitable laser intensity along the laser beam focal line 2b, which intensity is ensured by the focusing of laser beam 2 on a section of length l, i.e. a line focus of length l) a section 2c (aligned along the longitudinal beam direction) along which an induced absorption is generated in the substrate material. The induced absorption induces defect line formation in the substrate material along section 2c.The formation of the defect line is not only local, but extends over the entire length of section 2c of the induced absorption. The length of section 2c (which corresponds to the length of the overlapping of laser beam focal line 2b with substrate 1) is labeled with reference L. The average diameter or extent of the section of the induced absorption 2c (or the sections in the material of substrate 1 undergoing the formation of defect lines) is labeled with reference D. This average extent D basically corresponds to the average diameter δ of the laser beam focal line 2b, that is, an average spot diameter in a range of between about 0.1 μm and about 5 μm.

As FIG. 2A shows, the substrate material (which is transparent to the wavelength λ of laser beam 2) is heated due to the induced absorption along the focal line 2b arising from the nonlinear effects (e.g. two-photon absorption, multi-photon absorption) associated with the high intensity of the laser beam within focal line 2b. FIG. 2B illustrates that the heated substrate material will eventually expand so that a corresponding induced tension leads to micro-crack formation, with the tension being the highest at surface 1a.

Representative optical assemblies 6, which can be applied to generate the focal line 2b, as well as a representative optic setup, in which these optical assemblies can be applied, are described below. All assemblies or setups are based on the description above so that identical references are used for identical components or features or those which are equal in their function. Therefore only the differences are described below.

To ensure high quality (regarding breaking strength, geometric precision, roughness and avoidance of re-machining requirements) of the surface of the separated part along which separation occurs, the individual focal lines positioned on the substrate surface along the line of separation should be generated using the optical assembly described below (hereinafter, the optical assembly is alternatively also referred to as laser optics). The roughness of the separated surface (the perimeter surface of the separated part) is determined primarily by the spot size or the spot diameter of the focal line. Roughness of a surface can be characterized, for example, by the Ra surface roughness parameter defined by the ASME B46.1 standard. As described in ASME B46.1, Ra is the arithmetic average of the absolute values of the surface profile height deviations from the mean line, recorded within the evaluation length. In alternative terms, Ra is the average of a set of absolute height deviations of individual features (peaks and valleys) of the surface relative to the mean.

In order to achieve a small spot size of, for example, 0.5 μm to 2 μm in case of a given wavelength λ of laser 3 (interaction with the material of substrate 1), certain requirements must usually be imposed on the numerical aperture of laser optics 6. These requirements are met by laser optics 6 described below. In order to achieve the required numerical aperture, the optics must, on the one hand, dispose of the required opening for a given focal length, according to the known Abbé formulae (N.A.=n sin (theta), n: refractive index of the material to be processed, theta: half the aperture angle; and theta=arc tan (DL/2f); DL: aperture diameter, f: focal length). On the other hand, the laser beam must illuminate the optics up to the required aperture, which is typically achieved by means of beam widening using widening telescopes between the laser and focusing optics.

The spot size should not vary too strongly for the purpose of a uniform interaction along the focal line. This can, for example, be ensured (see the embodiment below) by illuminating the focusing optics only in a small, circular area so that the beam opening, and thus the percentage of the numerical aperture, only vary slightly.

According to FIG. 3A (section perpendicular to the substrate plane at the level of the central beam in the laser beam bundle of laser radiation 2; here, too, laser beam 2 is perpendicularly incident to the substrate plane (before entering optical assembly 6), i.e. incidence angle θ is 0° so that the focal line 2b or the section of the induced absorption 2c is parallel to the substrate normal), the laser radiation 2a emitted by laser 3 is first directed onto a circular aperture 8 which is completely opaque to the laser radiation used. Aperture 8 is oriented perpendicular to the longitudinal beam axis and is centered on the central beam of the depicted beam bundle 2a.The diameter of aperture 8 is selected in such a way that the beam bundles near the center of beam bundle 2a or the central beam (here labeled with 2aZ) hit the aperture and are completely absorbed by it. Only the beams in the outer perimeter range of beam bundle 2a (marginal rays, here labeled with 2aR) are not absorbed due to the reduced aperture size compared to the beam diameter, but pass aperture 8 laterally and hit the marginal areas of the focusing optic elements of the optical assembly 6, which, in this embodiment, is designed as a spherically cut, bi-convex lens 7.

Lens 7 is centered on the central beam and is designed as a non-corrected, bi-convex focusing lens in the form of a common, spherically cut lens. The spherical aberration of such a lens may be advantageous. As an alternative, aspheres or multi-lens systems deviating from ideally corrected systems, which do not form an ideal focal point but a distinct, elongated focal line of a defined length, can also be used (i.e., lenses or systems which do not have a single focal point). The zones of the lens thus focus along a focal line 2b, subject to the distance from the lens center. The diameter of aperture 8 across the beam direction is approximately 90% of the diameter of the beam bundle (defined by the distance required for the intensity of the beam to decrease to 1/e2 of the peak intensity) and approximately 75% of the diameter of the lens 7 of the optical assembly 6. The focal line 2b of a non-aberration-corrected spherical lens 7 generated by blocking out the beam bundles in the center is thus used. FIG. 3A shows the section in one plane through the central beam, and the complete three-dimensional bundle can be seen when the depicted beams are rotated around the focal line 2b.

One potential disadvantage of this type of a focal line formed by lens 7 and the system shown in FIG. 3A is that the conditions (spot size, laser intensity) may vary along the focal line (and thus along the desired depth in the material) and therefore the desired type of interaction (no melting, induced absorption, thermal-plastic deformation up to crack formation) may possibly occur only in selected portions of the focal line. This means in turn that possibly only a part of the incident laser light is absorbed by the substrate material in the desired way. In this way, the efficiency of the process (required average laser power for the desired separation speed) may be impaired, and the laser light may also be transmitted into undesired regions (parts or layers adherent to the substrate or the substrate holding fixture) and interact with them in an undesirable way (e.g. heating, diffusion, absorption, unwanted modification).

FIG. 3B-1-4 show (not only for the optical assembly in FIG. 3A, but also for any other applicable optical assembly 6) that the position of laser beam focal line 2b can be controlled by suitably positioning and/or aligning the optical assembly 6 relative to substrate 1 as well as by suitably selecting the parameters of the optical assembly 6. As FIG. 3B-1 illustrates, the length l of the focal line 2b can be adjusted in such a way that it exceeds the substrate thickness d (here by factor 2). If substrate 1 is placed (viewed in longitudinal beam direction) centrally to focal line 2b, the section of induced absorption 2c is generated over the entire substrate thickness. The laser beam focal line 2b can have a length l in a range of between about 0.1 mm and about 100 mm or in a range of between about 0.1 mm and about 10 mm, or in a range of between about 0.1 mm and about 1 mm, for example. Various embodiments can be configured to have length l of about 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.7 mm, 1 mm, 2 mm, 3 mm or 5 mm, for example.

In the case shown in FIG. 3B-2, a focal line 2b of length l is generated which corresponds more or less to the substrate thickness d. Since substrate 1 is positioned relative to line 2b in such a way that line 2b starts at a point outside the substrate, the length L of the section of induced absorption 2c (which extends here from the substrate surface to a defined substrate depth, but not to the reverse surface 1b) is smaller than the length l of focal line 2b.FIG. 3B-3 shows the case in which the substrate 1 (viewed along the beam direction) is positioned above the starting point of focal line 2b so that, as in FIG. 3B-2, the length l of line 2b is greater than the length L of the section of induced absorption 2c in substrate 1. The focal line thus starts within the substrate and extends beyond the reverse (remote) surface 1b.FIG. 3B-4 shows the case in which the focal line length l is smaller than the substrate thickness d so that—in the case of a central positioning of the substrate relative to the focal line viewed in the direction of incidence—the focal line starts near the surface 1a within the substrate and ends near the surface 1b within the substrate (e.g. 1=0.75·d).

It is particularly advantageous to position the focal line 2b in such a way that at least one of surfaces 1a, 1b is covered by the focal line, so that the section of induced absorption 2c starts at least on one surface of the substrate. In this way it is possible to achieve virtually ideal cuts while avoiding ablation, feathering and particulation at the surface.

FIG. 4 depicts another applicable optical assembly 6. The basic construction follows the one described in FIG. 3A so that only the differences are described below. The depicted optical assembly is based the use of optics with a non-spherical free surface in order to generate the focal line 2b, which is shaped in such a way that a focal line of defined length l is formed. For this purpose, aspheres can be used as optic elements of the optical assembly 6. In FIG. 4, for example, a so-called conical prism, also often referred to as axicon, is used. An axicon is a special, conically cut lens which forms a spot source on a line along the optical axis (or transforms a laser beam into a ring). The layout of such an axicon is generally known to one skilled in the art; the cone angle in the example is 10°.The apex of the axicon labeled here with reference 9 is directed towards the incidence direction and centered on the beam center. Since the focal line 2b produced by the axicon 9 starts within its interior, substrate 1 (here aligned perpendicularly to the main beam axis) can be positioned in the beam path directly behind axicon 9. As FIG. 4 shows, it is also possible to shift substrate 1 along the beam direction due to the optical characteristics of the axicon while remaining within the range of focal line 2b.The section of the induced absorption 2c in the material of substrate 1 therefore extends over the entire substrate depth d.

However, the depicted layout is subject to the following restrictions: Since the region of focal line 2b formed by axicon 9 begins within axicon 9, a significant part of the laser energy is not focused into the section of induced absorption 2c of focal line 2b, which is located within the material, in the situation where there is a separation between axicon 9 and the substrate material. Furthermore, length l of focal line 2b is related to the beam diameter through the refractive indices and cone angles of axicon 9. This is why, in the case of relatively thin materials (several millimeters), the total focal line is much longer than the substrate thickness, having the effect that much of the laser energy is not focused into the material.

For this reason, it may be desirable to use an optical assembly 6 that includes both an axicon and a focusing lens. FIG. 5A depicts such an optical assembly 6 in which a first optical element (viewed along the beam direction) with a non-spherical free surface designed to form a laser beam focal line 2b is positioned in the beam path of laser 3. In the case shown in FIG. 5A, this first optical element is an axicon 10 with a cone angle of 5°, which is positioned perpendicularly to the beam direction and centered on laser beam 3. The apex of the axicon is oriented towards the beam direction. A second, focusing optical element, here the plano-convex lens 11 (the curvature of which is oriented towards the axicon), is positioned in the beam direction at a distance z1 from the axicon 10. The distance Z1, in this case approximately 300 mm, is selected in such a way that the laser radiation formed by axicon 10 is circularly incident on the outer radial portion of lens 11. Lens 11 focuses the circular radiation on the output side at a distance Z2, in this case approximately 20 mm from lens 11, on a focal line 2b of a defined length, in this case 1.5 mm. The effective focal length of lens 11 is 25 mm in this embodiment. The circular transformation of the laser beam by axicon 10 is labeled with the reference SR.

FIG. 5B depicts the formation of the focal line 2b or the induced absorption 2c in the material of substrate 1 according to FIG. 5A in detail. The optical characteristics of both elements 10, 11 as well as the positioning of them is selected in such a way that the length l of the focal line 2b in beam direction is exactly identical with the thickness d of substrate 1. Consequently, an exact positioning of substrate 1 along the beam direction is required in order to position the focal line 2b exactly between the two surfaces 1a and 1b of substrate 1, as shown in FIG. 5B.

It is therefore advantageous if the focal line is formed at a certain distance from the laser optics, and if the greater part of the laser radiation is focused up to a desired end of the focal line. As described, this can be achieved by illuminating a primarily focusing element 11 (lens) only circularly (annularly) over a particular outer radial region, which, on the one hand, serves to realize the required numerical aperture and thus the required spot size, and on the other hand, however, the circle of diffusion diminishes in intensity after the required focal line 2b over a very short distance in the center of the spot, as a basically circular spot is formed. In this way, the formation of defect lines is stopped within a short distance in the required substrate depth. A combination of axicon 10 and focusing lens 11 meets this requirement. The axicon acts in two different ways: due to the axicon 10, a usually round laser spot is sent to the focusing lens 11 in the form of a ring, and the asphericity of axicon 10 has the effect that a focal line is formed beyond the focal plane of the lens instead of a focal point in the focal plane. The length l of focal line 2b can be adjusted via the beam diameter on the axicon. The numerical aperture along the focal line, on the other hand, can be adjusted via the distance Z1 (axicon-lens separation) and via the cone angle of the axicon. In this way, the entire laser energy can be concentrated in the focal line.

If formation of the defect line is intended to continue to the back side of the substrate, the circular (annular) illumination still has the advantage that (1) the laser power is used optimally in the sense that most of the laser light remains concentrated in the required length of the focal line and (2) it is possible to achieve a uniform spot size along the focal line—and thus a uniform separation of part from substrate along the focal line—due to the circularly illuminated zone in conjunction with the desired aberration set by means of the other optical functions.

Instead of the plano-convex lens depicted in FIG. 5A, it is also possible to use a focusing meniscus lens or another higher corrected focusing lens (asphere, multi-lens system).

In order to generate very short focal lines 2b using the combination of an axicon and a lens depicted in FIG. 5A, it would be necessary to select a very small beam diameter of the laser beam incident on the axicon. This has the practical disadvantage that the centering of the beam onto the apex of the axicon must be very precise and that the result is very sensitive to directional variations of the laser (beam drift stability). Furthermore, a tightly collimated laser beam is very divergent, i.e. due to the light deflection the beam bundle becomes blurred over short distances.

As shown in FIG. 6, both effects can be avoided by including another lens, a collimating lens 12 in the optical assembly 6. The additional positive lens 12 serves to adjust the circular illumination of focusing lens 11 very tightly. The focal length f′ of collimating lens 12 is selected in such a way that the desired circle diameter dr results from distance Z1a from the axicon to the collimating lens 12, which is equal to f′. The desired width br of the ring can be adjusted via the distance Z1b (collimating lens 12 to focusing lens 11). As a matter of pure geometry, the small width of the circular illumination leads to a short focal line. A minimum can be achieved at distance f′.

The optical assembly 6 depicted in FIG. 6 is thus based on the one depicted in FIG. 5A so that only the differences are described below. The collimating lens 12, here also designed as a plano-convex lens (with its curvature towards the beam direction) is additionally placed centrally in the beam path between axicon 10 (with its apex towards the beam direction), on the one side, and the plano-convex lens 11, on the other side. The distance of collimating lens 12 from axicon 10 is referred to as Z1a, the distance of focusing lens 11 from collimating lens 12 as Z1b, and the distance of the focal line 2b from the focusing lens 11 as Z2 (always viewed in beam direction). As shown in FIG. 6, the circular radiation SR formed by axicon 10, which is incident divergently and under the circle diameter dr on the collimating lens 12, is adjusted to the required circle width br along the distance Z1b for an at least approximately constant circle diameter dr at the focusing lens 11. In the case shown, a very short focal line 2b is intended to be generated so that the circle width br of approximately 4 mm at lens 12 is reduced to approximately 0.5 mm at lens 11 due to the focusing properties of lens 12 (circle diameter dr is 22 mm in the example).

In the depicted example, it is possible to achieve a length of the focal line 1 of less than 0.5 mm using a typical laser beam diameter of 2 mm, a focusing lens 11 with a focal length f=25 mm, a collimating lens with a focal length f′=150 mm, and choosing distances Z1a=Z1b=140 mm and Z2=15 mm.

FIGS. 7A-7C illustrate the laser-matter interaction at different laser intensity regimes. In the first case, shown in FIG. 7A, the unfocused laser beam 710 goes through a transparent substrate 720 without introducing any modification to it. In this particular case, the nonlinear effect is not present because the laser energy density (or laser energy per units of area illuminated by the beam) is below the threshold necessary to induce nonlinear effects. The higher the energy density, the higher is the intensity of the electromagnetic field. Therefore, as shown in FIG. 7B when the laser beam is focused by spherical lens 730 to a smaller spot size, as shown in FIG. 7B, the illuminated area is reduced and the energy density increases, triggering the nonlinear effect that will modify the material to permit formation of a fault line only in the volume where that condition is satisfied. In this way, if the beam waist of the focused laser is positioned at the surface of the substrate, modification of the surface will occur. In contrast, if the beam waist of the focused laser is positioned below the surface of the substrate, nothing happens at the surface when the energy density is below the threshold of the nonlinear optical effect. But at the focus 740, positioned in the bulk of the substrate 720, the laser intensity is high enough to trigger multi-photon non-linear effects, thus inducing damage to the material. Finally, as shown in FIG. 7C in the case of an axicon, as shown in FIG. 7C, the diffraction pattern of an axicon lens 750, or alternatively a Fresnel axicon, creates interference that generates a Bessel-shaped intensity distribution (cylinder of high intensity 760) and only in that volume is the intensity high enough to create nonlinear absorption and modification to the material 720.

Laser and Optical System

For the purpose of cutting sapphire, a process was developed that uses a 1064 nm picosecond laser in combination with line-focus beam forming optics to create defect lines in the substrate. A sapphire substrate with 0.55 mm thickness was positioned so that it was within the region of the focal line produced by the optics. With a focal line of about 1 mm in length, and a picosecond laser that produces output power of about 24 W or more at a repetition rate of 200 kHz (about 120 μJ/pulse in pulse mode or about 120 μJ/burst in burst mode) measured at the material, the optical intensities in the focal line region can easily be high enough to create non-linear absorption in the sapphire or sapphire-containing substrate material. A region of damaged, ablated, vaporized, or otherwise modified material within the sapphire substrate was created that approximately followed the linear region of high intensity.

The ultrashort (pulse durations on the order tens of picoseconds or shorter) laser can be operated in pulse mode or burst mode. In pulse mode, a series of nominally identical single pulses is emitted from the laser and directed to the substrate. In pulse mode, the repetition rate of the laser is determined by the spacing in time between the pulses. In burst mode, bursts of pulses are emitted from the laser, where each burst includes two or more pulses (of equal or different amplitude). In burst mode, pulses within a burst are separated by a first time interval (which defines a pulse repetition rate for the burst) and the bursts are separated by a second time interval (which defines a burst repetition rate), where the second time interval is typically much longer than the first time interval. As used herein (whether in the context of pulse mode or burst mode), time interval refers to the time difference between corresponding parts of a pulse or burst (e.g. leading edge-to-leading edge, peak-to-peak, or trailing edge-to-trailing edge). Pulse and burst repetition rates are controlled by the design of the laser and can typically be adjusted, within limits, by adjusting operating conditions of the laser. Typical pulse and burst repetition rates are in the kHz to MHz range. The laser pulse duration (in pulse mode or for pulses within a burst in burst mode) may be 10−10 s or less, or 10−11 s or less, or 10−12 s or less, or 10−13 s or less. In the exemplary embodiments described herein, the laser pulse duration is greater than 10−15.

More specifically, as illustrated in FIG. 8A, according to selected embodiments described herein, the picosecond laser creates a “burst” 500 of pulses 500A, sometimes also called a “burst pulse”. Bursting is a type of laser operation where the emission of pulses is not in a uniform and steady stream but rather in tight clusters of pulses. Each “burst” 500 may contain multiple pulses 500A (such as 2 pulses, 3 pulses, 4 pulses, 5 pulses, 10, 15, 20, or more) of very short duration Td up to 100 psec (for example, 0.1 psec, 5 psec, 10 psec, 15 psec, 18psec, 20 psec, 22 psec, 25 psec, 30 psec, 50 psec, 75 psec, or therebetween). The pulse duration is generally in a range from about 1 psec to about 1000 psec, or in a range from about 1 psec to about 100 psec, or in a range from about 2 psec to about 50 psec, or in a range from about 5 psec to about 20 psec. These individual pulses 500A within a single burst 500 can also be termed “sub-pulses,” which simply denotes the fact that they occur within a single burst of pulses. The energy or intensity of each laser pulse 500A within the burst may not be equal to that of other pulses within the burst, and the intensity distribution of the multiple pulses within a burst 500 may follow an exponential decay in time governed by the laser design. Preferably, each pulse 500A within the burst 500 of the exemplary embodiments described herein are separated in time from the subsequent pulse in the burst by a duration Tp from 1 nsec to 50 nsec (e.g. 10-50 nsec, or 10-40 nsec, or 10-30 nsec, with the time often governed by the laser cavity design. For a given laser, the time separation Tp between each pulses (pulse-to-pulse separation) within a burst 500 is relatively uniform (±10%). For example, in some embodiments, each pulse is separated in time from the subsequent pulse by approximately 20 nsec (50 MHz pulse repetition frequency). For example, for a laser that produces pulse-to-pulse separation Tp of about 20 nsec, the pulse-to-pulse separation Tp within a burst is maintained within about ±10%, or is about ±2 nsec. The time between each “burst” (i.e., time separation Tb between bursts) will be much longer (e.g., 0.25≦Tb≦1000 microseconds, for example 1-10 microseconds, or 3-8 microseconds,) For example in some of the exemplary embodiments of the laser described herein it is around 5 microseconds for a laser repetition rate or frequency of about 200 kHz. The laser repetition rate is also referred to as burst repetition frequency or burst repetition rate herein, and is defined as the time between the first pulse in a burst to the first pulse in the subsequent burst. In other embodiments, the burst repetition frequency is in a range of between about 1 kHz and about 4 MHz, or in a range between about 1 kHz and about 2 MHz, or in a range of between about 1 kHz and about 650 kHz, or in a range of between about 10 kHz and about 650 kHz. The time Tb between the first pulse in each burst to the first pulse in the subsequent burst may be 0.25 microsecond (4 MHz burst repetition rate) to 1000 microseconds (1 kHz burst repetition rate), for example 0.5 microseconds (2 MHz burst repetition rate) to 40 microseconds (25 kHz burst repetition rate), or 2 microseconds (500 kHz burst repetition rate) to 20 microseconds (50 kHz burst repetition rate). The exact timings, pulse durations, and repetition rates can vary depending on the laser design and user-controllable operating parameters. Short pulses (Td<20 psec and preferably Td≦15 psec) of high intensity have been shown to work well.

The required energy to modify the material can be described in terms of the burst energy—the energy contained within a burst (each burst 500 contains a series of pulses 500A), or in terms of the energy contained within a single laser pulse (many of which may comprise a burst). For these applications, the energy per burst (per millimeter of the material to be cut) can be from 10-2500 μJ, or from 20-1500 μJ, or from 25-750 μJ, or from 40-2500 μJ, or from 100-1500 μJ, or from 200-1250 μJ, or from 250-1500 μJ, or from 250-750 μJ. The energy of an individual pulse within the burst will be less, and the exact individual laser pulse energy will depend on the number of pulses 500A within the burst 500 and the rate of decay (e.g., exponential decay rate) of the laser pulses with time as shown in FIG. 8A. For example, for a constant energy/burst, if a pulse burst contains 10 individual laser pulses 500A, then each individual laser pulse 500A will contain less energy than if the same burst pulse 500 had only 2 individual laser pulses.

The use of lasers capable of generating such pulse bursts is advantageous for cutting or modifying transparent materials, for example glass. In contrast with the use of single pulses spaced apart in time by the repetition rate of a single-pulsed laser, the use of a burst pulse sequence that spreads the laser energy over a rapid sequence of pulses within burst 500 allows access to larger timescales of high intensity interaction with the material than is possible with single-pulse lasers. While a single-pulse can be expanded in time, conservation of energy dictates that as this is done, the intensity within the pulse must drop as roughly one over the pulse width. Hence if a 10 psec single pulse is expanded to a 10 nsec pulse, the intensity drops by roughly three orders of magnitude. Such a reduction can reduce the optical intensity to the point where non-linear absorption is no longer significant and the light-material interaction is no longer strong enough to allow for cutting. In contrast, with a burst pulse laser, the intensity during each pulse or sub-pulse 500A within the burst 500 can remain very high—for example three pulses 500A with pulse duration Td 10 psec that are spaced apart in time by a separation Tp of approximately 10 nsec still allows the intensity within each pulse to be approximately three times higher than that of a single 10 psec pulse, while the laser is allowed to interact with the material over a timescale that is three orders of magnitude larger. This adjustment of multiple pulses 500A within a burst thus allows manipulation of timescale of the laser-material interaction in ways that can facilitate greater or lesser light interaction with a pre-existing plasma plume, greater or lesser light-material interaction with atoms and molecules that have been pre-excited by an initial or previous laser pulse, and greater or lesser heating effects within the material that can promote the controlled growth of defect lines (perforations). The amount of burst energy required to modify the material will depend on the substrate material composition and the length of the line focus used to interact with the substrate. The longer the interaction region, the more the energy is spread out, and the higher the burst energy that will be required.)

A defect line or a hole is formed in the material when a single burst of pulses strikes essentially the same location on the glass. That is, multiple laser pulses within a single burst can produce a single defect line or a hole location in the glass. Of course, if the glass is translated (for example by a constantly moving stage) or the beam is moved relative to the glass, the individual pulses within the burst cannot be at exactly the same spatial location on the glass. However, they are well within 1 μm of one another—i.e., they strike the glass at essentially the same location. For example, they may strike the glass at a spacing sp where 0<sp≦500 nm from one another. For example, when a glass location is hit with a burst of 20 pulses the individual pulses within the burst strike the glass within 250 nm of each other. Thus, in some embodiments 1 nm<sp<250 nm. In some embodiments 1 nm<sp<100 nm.

Perforation Formation:

If the substrate has sufficient stress (e.g. with ion exchanged glass), then the part will spontaneously separate from the substrate along the fault line traced out by the laser process. However, if there is not a lot of stress inherent to the substrate, then the picosecond laser will simply form defect lines in the substrate. These defect lines generally take the form of holes with interior dimensions (diameters) in a range of about 0.5-1.5 μm.

The holes or defect lines may or may not perforate the entire thickness of the material, and may or may not be a continuous opening throughout the depth of the material. FIG. 8B shows an example of defect lines extending the entire thickness of a piece of 550 μm thick sapphire substrate. The defect lines are observed through the side of a cleaved edge. The defect lines through the material are not necessarily through holes—there may be regions of material that plug the holes, but they are generally small in size, on the order of microns. Note that upon separation of the part, fracture occurs along the defect lines to provide a part having a perimeter surface (edge) with features derived from the defect lines. Before separation, the defect lines are generally cylindrical in shape. Upon separation of the part, the defect lines fracture and remnants of the defect lines are evident in the contours of the perimeter surface of the separated part. In an ideal model, the defect lines are cleaved in half upon separation so that the perimeter surface of the separated part includes serrations corresponding to half-cylinders. In practice, separation may deviate from an ideal model and the serrations of the perimeter surface may be an arbitrary fraction of the shape of the original defect line. Irrespective of the particular form, features of the perimeter surface will be referred to as defect lines to indicate the origin of their existence.

FIG. 9 shows examples of small circular disks cut out of the same substrate with diameters of 6 mm and 10 mm. Some of the disks were mechanically separated, some were separated using a CO2 laser and some were separated by the CO2 laser and mechanically released from the substrate.

As described above, it is also possible to perforate stacked sheets of materials. In this case, the focal line length needs to be longer than the stack height.

The lateral spacing (pitch) between the holes (perforations, defect lines) is determined by the pulse rate of the laser as the substrate is translated underneath the focused laser beam. Only a single picosecond laser pulse or burst is usually necessary to form an entire hole, but multiple pulses or bursts may be used if desired. To form holes at different pitches, the laser can be triggered to fire at longer or shorter intervals. For cutting operations, the laser triggering generally is synchronized with the stage driven motion of the substrate beneath the beam, so laser pulses are triggered at a fixed interval, such as every 1 μm, or every 5 μm. The exact spacing between adjacent perforations is determined by the material properties that facilitate crack propagation from perforated hole to perforated hole, given the stress level in the substrate. However, in contrast to cutting a substrate, it is also possible to use the same method to only perforate the material. In the methods described herein, the holes may be separated by larger spacings (e.g. 7 μm pitch or greater).

The laser power and lens focal length (which determines the focal line length and hence power density) are particularly important parameters to ensure full penetration of the substrate and low surface and sub-surface damage.

In general, the higher the available laser power, the faster the material can be cut with the above process. The process(s) disclosed herein can cut glass at a cutting speed of 0.25 m/sec, or faster. A cut speed (or cutting speed) is the rate the laser beam moves relative to the surface of the substrate material (e.g., glass) while creating multiple defect lines holes. High cut speeds, such as, for example 400 mm/sec, 500 mm/sec, 750 mm/sec, 1 m/sec, 1.2 m/sec, 1.5 m/sec, or 2 m/sec, or even 3.4 m/sec to 4 m/sec are often desired in order to minimize capital investment for manufacturing, and to optimize equipment utilization rate. The laser power is equal to the burst energy multiplied by the burst repetition frequency (rate) of the laser. In general, to cut glass materials at high cutting speeds, the defect lines are typically spaced apart by 1-25 μm, in some embodiments the spacing is preferably 3 μm or larger—for example 3-12 μm, or for example 5-10 μm.

For example, to achieve a linear cutting speed of 300 mm/sec, 3 μm hole pitch corresponds to a pulse burst laser with at least 100 kHz burst repetition rate. For a 600 mm/sec cutting speed, a 3 μm pitch corresponds to a burst-pulsed laser with at least 200 kHz burst repetition rate. A pulse burst laser that produces at least 40 μJ/burst at 200 kHz, and cuts at a 600 mm/s cutting speed needs to have a laser power of at least 8 Watts. Higher cut speeds require accordingly higher laser powers.

For example, a 0.4 m/sec cut speed at 3 μm pitch and 40 μJ/burst would require at least a 5 W laser, a 0.5 m/sec cut speed at 3 μm pitch and 40 μJ/burst would require at least a 6 W laser. Thus, preferably the laser power of the pulse burst ps laser is 6 W or higher, more preferably at least 8 W or higher, and even more preferably at least 10 W or higher. For example, in order to achieve a 0.4 m/sec cut speed at 4 μm pitch (defect line spacing, or damage tracks spacing) and 100 μJ/burst, one would require at least a 10 W laser, and to achieve a 0.5 m/sec cut speed at 4 μm pitch and 100 μJ/burst, one would require at least a 12 W laser. For example, a to achieve a cut speed of 1 m/sec at 3 μm pitch and 40 μJ/burst, one would require at least a 13 W laser. Also, for example, 1 m/sec cut speed at 4 μm pitch and 400 μJ/burst would require at least a 100 W laser.

The optimal pitch between defect lines (damage tracks) and the exact burst energy is material dependent and can be determined empirically. However, it should be noted that raising the laser pulse energy or making the damage tracks at a closer pitch are not conditions that always make the substrate material separate better or with improved edge quality. A pitch that is too small (for example <0.1 micron, or in some exemplary embodiments <1 μm, or in other embodiments <2 μm) between defect lines (damage tracks) can sometimes inhibit the formation of nearby subsequent defect lines (damage tracks), and often can inhibit the separation of the material around the perforated contour. An increase in unwanted micro cracking within the glass may also result if the pitch is too small. A pitch that is too long (e.g. >50 μm, and in some glasses >25 μm or even >20 μm) may result in “uncontrolled microcracking”—i.e., where instead of propagating from defect line to defect line along the intended contour, the microcracks propagate along a different path, and cause the glass to crack in a different (undesirable) direction away from the intended contour. This may ultimately lower the strength of the separated part since the residual microcracks constitute flaws that weaken the glass. A burst energy for forming defect lines that is too high (e.g., >2500 μJ/burst, and in some embodiments >500 μJ/burst) can cause “healing” or re-melting of previously formed defect lines, which may inhibit separation of the glass. Accordingly, it is preferred that the burst energy be <2500 μJ/burst, for example, ≦500 μJ/burst. Also, using a burst energy that is too high can cause formation of microcracks that are extremely large and create structural imperfections that can reduce the edge strength of the part after separation. A burst energy that is too low (e.g. <40 μJ/burst) may result in no appreciable formation of defect lines within the glass, and hence may necessitate especially high separation force or result in a complete inability to separate along the perforated contour.

Typical exemplary cutting rates (speeds) enabled by this process are, for example, 0.25 m/sec and higher. In some embodiments, the cutting rates are at least 300 mm/sec. In some embodiments, the cutting rates are at least 400 mm/sec, for example, 500 mm/sec to 2000 mm/sec, or higher. In some embodiments the picosecond (ps) laser utilizes pulse bursts to produce defect lines with periodicity between 0.5 μm and 13 μm, e.g. between 0.5 and 3 μm. In some embodiments, the pulsed laser has laser power of 10 W-100 W and the material and/or the laser beam are translated relative to one another at a rate of at least 0.25 m/sec; for example, at the rate of 0.25 m/sec to 0.35 m/sec, or 0.4 m/sec to 5 m/sec. Preferably, each pulse burst of the pulsed laser beam has an average laser energy measured at the workpiece greater than 40 μJ per burst per mm thickness of workpiece. Preferably, each pulse burst of the pulsed laser beam has an average laser energy measured at the workpiece greater of less than 2500 μJ per burst per mm thickness of workpiece, and preferably lass than about 2000 μJ per burst per mm thickness of workpiece, and in some embodiments less than 1500 μJ per burst per mm thickness of workpiece; for example, not more than 500 μJ per burst per mm thickness of workpiece.

We discovered that much higher (5 to 10 times higher) volumetric pulse energy density (μJ/μm3) is required for perforating alkaline earth boroaluminosilicate glasses with low or no alkali content. This can be achieved, for example, by utilizing pulse burst lasers, preferably with at least 2 pulses per burst and providing volumetric energy densities within the alkaline earth boroaluminosilicate glasses (with low or no alkali) of about 0.05 μJ/μm3 or higher, e.g., at least 0.1 μJ/μm3, for example 0.1-0.5 μJ/μm3.

Accordingly, it is preferable that the laser produces pulse bursts with at least 2 pulses per burst. For example, in some embodiments the pulsed laser has a power of 10 W-150 W (e.g., 10 W-100 W) and produces pulse bursts with at least 2 pulses per burst (e.g., 2-25 pulses per burst). In some embodiments the pulsed laser has a power of 25 W-60 W, and produces pulse bursts with at least 2-25 pulses per burst, and periodicity or distance between the adjacent defect lines produced by the laser bursts is 2-10 μm. In some embodiments, the pulsed laser has a power of 10 W-100 W, produces pulse bursts with at least 2 pulses per burst, and the workpiece and the laser beam are translated relative to one another at a rate of at least 0.25 m/sec. In some embodiments the workpiece and/or the laser beam are translated relative to one another at a rate of at least 0.4 m/sec.

For example, for cutting 0.7 mm thick non-ion exchanged Corning code 2319 or code 2320 Gorilla® glass, it is observed that pitches of 3-7 μm can work well, with pulse burst energies of about 150-250 μJ/burst, and burst pulse numbers that range from 2-15, and preferably with pitches of 3-5 μm and burst pulse numbers (number of pulses per burst) of 2-5.

At 1 m/sec cut speeds, the cutting of Eagle XG® glass typically requires utilization of laser powers of 15-84 W, with 30-45 W often being sufficient. In general, across a variety of glass and other transparent materials, applicants discovered that laser powers between 10 W and 100 W are preferred to achieve cutting speeds from 0.2-1 m/sec, with laser powers of 25-60 W being sufficient (or optimum) for many glasses. For cutting speeds of 0.4 m/sec to 5 m/sec, laser powers should preferably be 10 W-150 W, with burst energy of 40-750 μJ/burst, 2-25 bursts per pulse (depending on the material that is cut), and defect line separation (pitch) of 3 to 15 μm, or 3-10 μm. The use of picosecond pulse burst lasers would be preferable for these cutting speeds because they generate high power and the required number of pulses per burst. Thus, according to some exemplary embodiments, the pulsed laser produces 10 W-100 W of power, for example 25 W to 60 W, and produces pulse bursts at least 2-25 pulses per burst and the distance between the defect lines is 2-15 μm; and the laser beam and/or workpiece are translated relative to one another at a rate of at least 0.25 m/sec, in some embodiments at least 0.4 m/sec, for example 0.5 m/sec to 5 m/sec, or faster.

Cutting and Separating Shapes of a Plate

As shown in FIG. 9, different conditions were found that allow the separation of sapphire parts from a sapphire substrate. The first method is to use only the picosecond laser to create through holes and forming a fault line following the desired shape (in this case circles with diameters of 6 and 10 mm). After this step, mechanical separation can be accomplished by using a breaking plier, manually bending the part, or any method that creates tension that initiates and propagates the separation along the fault line. To create through holes in 550 μm thick sapphire and mechanically separate the disks from the plate, good results were found for the following optics and laser parameters:

    • Input beam diameter to axicon lens ˜2 mm
    • Axicon angle=10 degrees
    • Initial collimating lens focal length=125 mm
    • Final objective lens focal length=30 mm
    • Incident beam convergence angle (Beta)=12.75 degrees
    • Focus set to be at Z=0.75 mm (approximately 200 μm above the top surface of the part)
    • Laser power ˜24 Watts (60% of full power)
    • Burst repetition rate of the laser=200 kHz.
    • Energy per burst=120 μJ (24 W/200 kHz)
    • 4 pulses/burst
    • Single pass

The second method is to use a defocused CO2 laser that follows the picosecond laser, after it has finished tracing the desired contour, to fully separate the part from the surrounding substrate matrix. The thermal stress induced by the defocused CO2 laser is enough to initiate and propagate the separation following the desired contour, releasing it from the panel. For this case, good results were found for the following optics and laser parameters:

    • Picosecond laser:
    • Input beam diameter to axicon lens ˜2 mm
    • Axicon angle=10 degrees
    • Initial collimating lens focal length=125 mm
    • Final objective lens focal length=30 mm
    • incident beam convergence angle (Beta)=12.75 degrees
    • Focus set to be at Z=0.75 mm (approximately 200 μm above the top surface of the part)
    • Laser power ˜24 Watts (60% of full power)
    • Burst repetition rate of the laser=200 kHz.
    • Energy per burst=120 μJ (24 W/200 kHz) 4 pulses/burst
    • Single pass for 10 mm diameter and double pass for 6 mm diameter
    • CO2 laser:
    • Laser translation speed: 250 mm/s
    • Laser power=200 W
    • Pulse duration 45 μs (95% duty cycle)
    • Laser modulation frequency 20 kHz
    • Laser beam defocus (relative to the incident surface of the glass) is 20 mm
    • Single pass for 10 mm diameter and double pass for 6 mm diameter

Finally the last condition explored is a mix of the two methods described above, where a defocused CO2 laser follows the picosecond laser after it has finished tracing the desired contour to partially separate the part from the surrounding substrate matrix. The thermal stress induced by the CO2 laser is enough to initiate and partially propagate the separation along the desired contour, but not enough to release it from the surrounding substrate matrix. Sometimes, process convenience or efficiency makes it desirable to delay the release of the part until a later step. For this case, the best results were found for the same picosecond laser conditions described above and either a lower CO2 laser power or higher defocus (greater than about 25 mm) of the CO2 laser beam and higher translation speed, depending on the degree of separation being pursued.

FIGS. 10A and 10B, respectively, show exemplary perforations that were traced by the picosecond laser, and exposed to the CO2 laser to release the buttons. The CO2 laser may be a defocused CO2 laser and may be traversed from a distal (or proximal) edge of the substrate to a proximal (or distal) edge of the substrate. It is important to notice that the introduction of release lines and the path traced by the defocused CO2 laser is carefully planned to avoid issues, such as:

Avoid coincident start/stop position. In general, the slow acceleration/deceleration of the moving stages can be enough to create a punctual stress source that will later crack or even shatter the part.

Stopping or “parking” the defocused CO2 laser on any spot over the traced contour—most commonly this will melt the sapphire surface and/or create micro-cracks. The path of the CO2 laser should be planned to start and finish outside the contour to be released.

Release lines should be planned to allow separation without premature collapse of the surrounding and supporting substrate matrix.

The cutting processes described above provides the following benefits that may translate to enhanced laser processing capabilities and cost savings and thus lower cost manufacturing. In the current embodiment, the cutting process offers:

Full separation of parts being cut with reduced laser power: sapphire can be completely separated or cut in a clean and controlled fashion.

Reduced subsurface damage: due to the ultra-short pulse interaction between laser and material, there is little thermal interaction and thus a minimal heat affected zone that can result in undesirable stress and micro-cracking at the surface and in the subsurface region. In addition, the optics that condense the laser beam into the sapphire or other substrate material create defect lines that are typically 2 to 5 microns in diameter on the surface of the part. After separation, subsurface damage is limited to distances from the perimeter surface less than about 75 μm. This has great impact on the edge strength of the part, as strength is governed by the number of defects, and their statistical distribution in terms of size and depth. The higher these numbers are, the weaker the edges of the part will be.

Process cleanliness: The methods described herein permit separation and/or cutting of sapphire in a clean and controlled fashion. It is very challenging to use conventional ablative or thermal laser processes because they tend to trigger heat affected zones that induce micro-cracks and fragmentation of the substrate into several smaller pieces. The characteristics of the laser pulses and the induced interactions with the material of the disclosed method avoid all of these issues because they occur in a very short time scale and the transparency of the substrate material to the laser radiation minimizes induced thermal effects. Since the defect line is created within the substrate, the presence of debris and particulate matter during the cutting step is virtually eliminated. If there are any particulates resulting from the created defect line, they are well contained until the part is separated.

Cutting Complex Profiles and Shapes in Different Sizes

The present laser processing method allows for cutting/separation of glass, sapphire, and other substrates following many forms and shapes, which is a limitation in other competing technologies. Tight radii may be cut (less than about 5 mm) with the present method, allowing curved edges. Circles of diameters of 5 mm and 10 mm have been successfully cut out of larger sapphire substrates, which is challenging or impossible for other laser techniques. Also, since the defect lines strongly control the location of any crack propagation, this method gives great control to the spatial location of a cut, and allows for cutting and separation of structures and features as small as a few hundred microns.

Elimination of Process Steps

The process to fabricate parts (e.g. glass plates or arbitrarily shaped sapphire parts) from the incoming substrate (e.g. glass panel or sapphire piece) to the final size and shape involves several steps that encompass cutting the substrate, cutting to size, finishing and edge shaping, thinning the parts down to their target thickness, polishing, and even chemically strengthening in some cases. Elimination of any of these steps will improve manufacturing cost in terms of process time and capital expense. The presented method may reduce the number of steps by, for example:

    • reduced debris and edge defects generation—potential elimination of washing and drying stations;
    • cutting the sample directly to its final size, shape and thickness—eliminating the need for finishing lines.
      Cutting Stacks

The process is also capable of creating these lines with vertical defects on stacked glass panels. There is a limitation to the height of the stack, but it is possible to increase productivity by simultaneously processing multiple stacked plates. It requires that the material be transparent to the laser wavelength, which is the case for sapphire at the laser wavelength used here (1064 nm).

The relevant teachings of all patents, published applications and references cited herein are incorporated by reference in their entirety.

While exemplary embodiments have been described herein, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope encompassed by the appended claims.

Claims

1. An article comprising sapphire, the article including an edge having a series of defect lines where each defect line extends at least 250 μm, the defect lines are less than 5 μm in diameter, the edge has a surface roughness Ra <0.5 μm, and the subsurface damage of the edge is <100 μm.

2. The article of claim 1, wherein the subsurface damage of the edge is <75 μm.

3. The article of claim 1, wherein the defect lines extend through the full thickness of the article.

4. The article of claim 1, wherein a distance between the defect lines is greater than 0.5 μm and less than or equal to about 15 μm.

5. The article of claim 1, wherein the article is less than 1.5 mm thick.

6. The article of claim 5, wherein the article is a circular disk.

7. The article of claim 1, wherein the article comprises a glass substrate with a sapphire layer attached thereto.

8. The article of claim 7, wherein the glass substrate is from 100 microns to 1 mm thick, and the sapphire layer is from 1 micron to 600 microns thick.

Referenced Cited
U.S. Patent Documents
1790397 January 1931 Woods et al.
2682134 June 1954 Stookey
2749794 June 1956 O'Leary
3647410 March 1972 Heaton et al.
3695497 October 1972 Dear
3695498 October 1972 Dear
3729302 April 1973 Heaton
3775084 November 1973 Heaton
4226607 October 7, 1980 Domken
4441008 April 3, 1984 Chan
4546231 October 8, 1985 Gresser et al.
4646308 February 24, 1987 Kafka et al.
4764930 August 16, 1988 Bille et al.
4891054 January 2, 1990 Bricker et al.
4907586 March 13, 1990 Bille et al.
4918751 April 1990 Pessot et al.
4929065 May 29, 1990 Hagerty et al.
5035918 July 30, 1991 Vyas
5040182 August 13, 1991 Spinelli et al.
5104210 April 14, 1992 Tokas
5108857 April 28, 1992 Kitayama et al.
5112722 May 12, 1992 Tsujino et al.
5114834 May 19, 1992 Nachshon
5265107 November 23, 1993 Delfyett, Jr.
5400350 March 21, 1995 Galvanauskas
5434875 July 18, 1995 Rieger et al.
5436925 July 25, 1995 Lin et al.
5553093 September 3, 1996 Ramaswamy et al.
5574597 November 12, 1996 Kataoka et al.
5586138 December 17, 1996 Yokoyama
5696782 December 9, 1997 Harter et al.
5736709 April 7, 1998 Neiheisel
5776220 July 7, 1998 Allaire et al.
6016223 January 18, 2000 Suzuki et al.
6016324 January 18, 2000 Rieger et al.
6038055 March 14, 2000 Hänsch et al.
6055829 May 2, 2000 Witzmann et al.
6078599 June 20, 2000 Everage et al.
6156030 December 5, 2000 Neev
6160835 December 12, 2000 Kwon
6186384 February 13, 2001 Sawada
6210401 April 3, 2001 Lai
6256328 July 3, 2001 Delfyett et al.
6259151 July 10, 2001 Morrison
6259512 July 10, 2001 Mizouchi
6272156 August 7, 2001 Reed et al.
6301932 October 16, 2001 Allen et al.
6322958 November 27, 2001 Hayashi
6339208 January 15, 2002 Rockstroh et al.
6373565 April 16, 2002 Kafka et al.
6381391 April 30, 2002 Islam et al.
6396856 May 28, 2002 Sucha et al.
6407360 June 18, 2002 Choo et al.
6438996 August 27, 2002 Cuvelier
6445491 September 3, 2002 Sucha et al.
6449301 September 10, 2002 Wu et al.
6484052 November 19, 2002 Visuri et al.
6489589 December 3, 2002 Alexander
6501578 December 31, 2002 Bernstein et al.
6552301 April 22, 2003 Herman et al.
6573026 June 3, 2003 Aitken et al.
6592703 July 15, 2003 Habeck et al.
6635849 October 21, 2003 Okawa et al.
6635850 October 21, 2003 Amako et al.
6720519 April 13, 2004 Liu et al.
6729161 May 4, 2004 Miura et al.
6800237 October 5, 2004 Yamamoto et al.
6800831 October 5, 2004 Hoetzel
6958094 October 25, 2005 Ohmi et al.
6992026 January 31, 2006 Fukuyo et al.
7009138 March 7, 2006 Amako et al.
7353829 April 8, 2008 Wachter et al.
7511886 March 31, 2009 Schultz et al.
7535634 May 19, 2009 Savchenkov et al.
7633033 December 15, 2009 Thomas et al.
7642483 January 5, 2010 You et al.
7726532 June 1, 2010 Gonoe
8104385 January 31, 2012 Hayashi et al.
8118971 February 21, 2012 Hori et al.
8132427 March 13, 2012 Brown et al.
8168514 May 1, 2012 Garner et al.
8245539 August 21, 2012 Lu et al.
8245540 August 21, 2012 Abramov et al.
8269138 September 18, 2012 Garner et al.
8283595 October 9, 2012 Fukuyo et al.
8292141 October 23, 2012 Cox et al.
8296066 October 23, 2012 Zhao et al.
8327666 December 11, 2012 Harvey et al.
8341976 January 1, 2013 Dejneka et al.
8347651 January 8, 2013 Abramov et al.
8358888 January 22, 2013 Ramachandran
8444906 May 21, 2013 Lee et al.
8448471 May 28, 2013 Kumatani et al.
8518280 August 27, 2013 Hsu et al.
8549881 October 8, 2013 Brown et al.
8584354 November 19, 2013 Cornejo et al.
8584490 November 19, 2013 Garner et al.
8592716 November 26, 2013 Abramov et al.
8604380 December 10, 2013 Howerton et al.
8607590 December 17, 2013 Glaesemann et al.
8616024 December 31, 2013 Cornejo et al.
8635887 January 28, 2014 Black et al.
8680489 March 25, 2014 Martinez et al.
8685838 April 1, 2014 Fukuyo et al.
8697228 April 15, 2014 Carre et al.
8720228 May 13, 2014 Li
8826696 September 9, 2014 Brown et al.
8852698 October 7, 2014 Fukumitsu
8887529 November 18, 2014 Lu et al.
8916798 December 23, 2014 PlüSs
8943855 February 3, 2015 Gomez et al.
8971053 March 3, 2015 Kariya et al.
9138913 September 22, 2015 Arai et al.
9227868 January 5, 2016 Matsumoto et al.
9290407 March 22, 2016 Barefoot et al.
9296066 March 29, 2016 Hosseini et al.
9324791 April 26, 2016 Tamemoto
9327381 May 3, 2016 Lee et al.
9446590 September 20, 2016 Chen et al.
9481598 November 1, 2016 Bergh et al.
20020046997 April 25, 2002 Nam et al.
20020082466 June 27, 2002 Han
20020097486 July 25, 2002 Yamaguchi et al.
20020110639 August 15, 2002 Bruns
20030006221 January 9, 2003 Hong et al.
20050024743 February 3, 2005 Camy-Peyret
20050098548 May 12, 2005 Kobayashi et al.
20050115938 June 2, 2005 Sawaki et al.
20050274702 December 15, 2005 Deshi
20060011593 January 19, 2006 Fukuyo
20060109874 May 25, 2006 Shiozaki et al.
20060127679 June 15, 2006 Gulati et al.
20060227440 October 12, 2006 Gluckstad
20060289410 December 28, 2006 Morita et al.
20070111390 May 17, 2007 Komura et al.
20070111480 May 17, 2007 Maruyama et al.
20070119831 May 31, 2007 Kandt
20070132977 June 14, 2007 Komatsuda
20070138151 June 21, 2007 Tanaka et al.
20070177116 August 2, 2007 Amako
20070202619 August 30, 2007 Tamura et al.
20070298529 December 27, 2007 Maeda et al.
20080000884 January 3, 2008 Sugiura et al.
20080099444 May 1, 2008 Misawa et al.
20090013724 January 15, 2009 Koyo et al.
20090176034 July 9, 2009 Ruuttu et al.
20090183764 July 23, 2009 Meyer
20090250446 October 8, 2009 Sakamoto
20090294419 December 3, 2009 Abramov et al.
20090294422 December 3, 2009 Lubatschowski et al.
20090324899 December 31, 2009 Feinstein et al.
20100025387 February 4, 2010 Arai et al.
20100029460 February 4, 2010 Shojiya et al.
20100032087 February 11, 2010 Takahashi et al.
20100086741 April 8, 2010 Bovatsek et al.
20100089631 April 15, 2010 Sakaguchi et al.
20100089882 April 15, 2010 Tamura
20100102042 April 29, 2010 Garner et al.
20100129603 May 27, 2010 Blick et al.
20100147813 June 17, 2010 Lei et al.
20100252540 October 7, 2010 Lei et al.
20100252959 October 7, 2010 Lei et al.
20100276505 November 4, 2010 Smith
20100279067 November 4, 2010 Sabia et al.
20100287991 November 18, 2010 Brown et al.
20100326138 December 30, 2010 Kumatani et al.
20110049765 March 3, 2011 Li et al.
20110088324 April 21, 2011 Wessel
20110100401 May 5, 2011 Fiorentini
20110132881 June 9, 2011 Liu
20110183116 July 28, 2011 Hung et al.
20110240611 October 6, 2011 Sandström et al.
20110277507 November 17, 2011 Lu et al.
20110318555 December 29, 2011 Bookbinder et al.
20120017642 January 26, 2012 Teranishi et al.
20120047951 March 1, 2012 Dannoux et al.
20120048604 March 1, 2012 Cornejo et al.
20120061440 March 15, 2012 Roell
20120064306 March 15, 2012 Kang et al.
20120103018 May 3, 2012 Lu et al.
20120131962 May 31, 2012 Mitsugi et al.
20120135607 May 31, 2012 Shimoi et al.
20120135608 May 31, 2012 Shimoi et al.
20120145331 June 14, 2012 Gomez et al.
20120196071 August 2, 2012 Cornejo et al.
20120234049 September 20, 2012 Bolton
20120234807 September 20, 2012 Sercel et al.
20120255935 October 11, 2012 Kakui et al.
20120299219 November 29, 2012 Shimoi et al.
20120302139 November 29, 2012 Darcangelo et al.
20130019637 January 24, 2013 Sol et al.
20130034688 February 7, 2013 Koike et al.
20130044371 February 21, 2013 Rupp et al.
20130068736 March 21, 2013 Mielke et al.
20130075480 March 28, 2013 Yokogi et al.
20130091897 April 18, 2013 Fujii et al.
20130122264 May 16, 2013 Fujii et al.
20130126573 May 23, 2013 Hosseini et al.
20130129947 May 23, 2013 Harvey et al.
20130133367 May 30, 2013 Abramov et al.
20130143416 June 6, 2013 Norval
20130149434 June 13, 2013 Oh et al.
20130149494 June 13, 2013 Koike et al.
20130167590 July 4, 2013 Teranishi et al.
20130174607 July 11, 2013 Wootton et al.
20130174610 July 11, 2013 Teranishi et al.
20130180285 July 18, 2013 Kariya
20130189806 July 25, 2013 Hoshino
20130192305 August 1, 2013 Black et al.
20130209731 August 15, 2013 Nattermann et al.
20130220982 August 29, 2013 Thomas et al.
20130221053 August 29, 2013 Zhang
20130224439 August 29, 2013 Zhang et al.
20130228918 September 5, 2013 Chen et al.
20130247615 September 26, 2013 Boek et al.
20130266757 October 10, 2013 Giron et al.
20130270240 October 17, 2013 Kondo
20130280495 October 24, 2013 Matsumoto
20130288010 October 31, 2013 Akarapu et al.
20130291598 November 7, 2013 Saito et al.
20130312460 November 28, 2013 Kunishi et al.
20130323469 December 5, 2013 Abramov et al.
20130334185 December 19, 2013 Nomaru
20130340480 December 26, 2013 Nattermann et al.
20140027951 January 30, 2014 Srinivas
20140034730 February 6, 2014 Lee
20140042202 February 13, 2014 Lee
20140047957 February 20, 2014 Wu
20140102146 April 17, 2014 Saito et al.
20140110040 April 24, 2014 Cok
20140113797 April 24, 2014 Yamada et al.
20140133119 May 15, 2014 Kariya et al.
20140141217 May 22, 2014 Gulati et al.
20140147623 May 29, 2014 Shorey et al.
20140147624 May 29, 2014 Streltsov et al.
20140165652 June 19, 2014 Saito
20140174131 June 26, 2014 Saito et al.
20140199519 July 17, 2014 Schillinger et al.
20140216108 August 7, 2014 Wiegel et al.
20140290310 October 2, 2014 Green
20140320947 October 30, 2014 Egerton et al.
20140333929 November 13, 2014 Sung et al.
20140361463 December 11, 2014 DeSimone et al.
20150038313 February 5, 2015 Hosseini
20150075221 March 19, 2015 Kawaguchi et al.
20150075222 March 19, 2015 Mader
20150110442 April 23, 2015 Zimmel et al.
20150118522 April 30, 2015 Hosseini
20150136743 May 21, 2015 Hosseini
20150140241 May 21, 2015 Hosseini
20150140735 May 21, 2015 Hosseini
20150151380 June 4, 2015 Hosseini
20150158120 June 11, 2015 Courvoisier et al.
20150165548 June 18, 2015 Marjanovic et al.
20150165560 June 18, 2015 Hackert et al.
20150165562 June 18, 2015 Marjanovic et al.
20150165563 June 18, 2015 Manley et al.
20150166391 June 18, 2015 Marjanovic et al.
20150166393 June 18, 2015 Marjanovic et al.
20150166394 June 18, 2015 Marjanovic et al.
20150166395 June 18, 2015 Marjanovic et al.
20150166396 June 18, 2015 Marjanovic et al.
20150166397 June 18, 2015 Marjanovic et al.
20150183679 July 2, 2015 Saito
20150232369 August 20, 2015 Marjanovic et al.
20150299018 October 22, 2015 Bhuyan et al.
20150360991 December 17, 2015 Grundmueller et al.
20150367442 December 24, 2015 Bovatsek et al.
20160008927 January 14, 2016 Grundmueller et al.
20160009066 January 14, 2016 Nieber et al.
20160023922 January 28, 2016 Addiego et al.
20160031745 February 4, 2016 Ortner et al.
20160060156 March 3, 2016 Krueger et al.
20160280580 September 29, 2016 Bohme
20160290791 October 6, 2016 Buono et al.
Foreign Patent Documents
2388062 July 2000 CN
1283409 November 2006 CN
101502914 August 2009 CN
201357287 December 2009 CN
101637849 February 2010 CN
201471092 May 2010 CN
102672355 September 2012 CN
102898014 January 2013 CN
102923939 February 2013 CN
103013374 April 2013 CN
103143841 June 2013 CN
203021443 June 2013 CN
103273195 September 2013 CN
103316990 September 2013 CN
103359947 October 2013 CN
103359948 October 2013 CN
103531414 January 2014 CN
103746027 April 2014 CN
203509350 April 2014 CN
104344202 February 2015 CN
102672355 May 2015 CN
2231330 January 1974 DE
102006035555 January 2008 DE
102012010635 November 2013 DE
102012110971 May 2014 DE
102013223637 May 2015 DE
270897 February 1992 EP
0609978 August 1994 EP
656241 December 1998 EP
938946 September 1999 EP
949541 October 1999 EP
1159104 August 2004 EP
1609559 December 2005 EP
1043110 August 2006 EP
2133170 December 2009 EP
2202545 June 2010 EP
2574983 April 2013 EP
2754524 July 2014 EP
2754524 July 2014 EP
2781296 September 2014 EP
2783784 October 2014 EP
2859984 April 2015 EP
2859984 April 2015 EP
2989294 October 2013 FR
1242172 August 1971 GB
2481190 January 2015 GB
1179770 July 1989 JP
6318756 November 1994 JP
1994318756 November 1994 JP
9106243 April 1997 JP
11197498 July 1999 JP
1999197498 July 1999 JP
11269683 October 1999 JP
1999269683 October 1999 JP
11330597 November 1999 JP
1999330597 November 1999 JP
11347758 December 1999 JP
1999347758 December 1999 JP
2001138083 May 2001 JP
2002210730 July 2002 JP
2002228818 August 2002 JP
2003025085 January 2003 JP
2003114400 April 2003 JP
2003154517 May 2003 JP
2003181668 July 2003 JP
2003238178 August 2003 JP
2004209675 July 2004 JP
2005104819 April 2005 JP
2005205440 August 2005 JP
2005288503 October 2005 JP
2005288503 October 2005 JP
3775250 May 2006 JP
3775410 May 2006 JP
2006130691 May 2006 JP
2006248885 September 2006 JP
2007021548 February 2007 JP
2007196277 August 2007 JP
2007253203 October 2007 JP
4592855 December 2010 JP
2011049398 March 2011 JP
4672689 April 2011 JP
2011517299 June 2011 JP
4880820 February 2012 JP
2012024782 February 2012 JP
2012031018 February 2012 JP
2012159749 August 2012 JP
2013007842 January 2013 JP
2013043808 March 2013 JP
2013075802 April 2013 JP
2013091578 May 2013 JP
5274085 August 2013 JP
5300544 September 2013 JP
2013187247 September 2013 JP
2013203630 October 2013 JP
2013203631 October 2013 JP
2013223886 October 2013 JP
2012015366 February 2002 KR
2009057161 June 2009 KR
1020621 March 2011 KR
1120471 March 2012 KR
2012074508 July 2012 KR
2013031380 March 2013 KR
1269474 May 2013 KR
2013124646 November 2013 KR
1344368 December 2013 KR
2014022980 February 2014 KR
2014022981 February 2014 KR
2014064220 May 2014 KR
201226345 July 2012 TW
9929243 July 1999 WO
9963900 December 1999 WO
2004110693 December 2004 WO
2006073098 July 2006 WO
2007094160 August 2007 WO
2008080182 July 2008 WO
2008128612 October 2008 WO
2009114375 September 2009 WO
2010035736 April 2010 WO
2010111609 September 2010 WO
2010129459 November 2010 WO
2011025908 March 2011 WO
2011056781 May 2011 WO
2012006736 January 2012 WO
2012075072 June 2012 WO
2012108052 August 2012 WO
2012166753 December 2012 WO
2013022148 February 2013 WO
2013043173 March 2013 WO
2013138802 September 2013 WO
2013150990 October 2013 WO
2013153195 October 2013 WO
2013153195 October 2013 WO
2014028022 February 2014 WO
2014/079478 May 2014 WO
2014/079570 May 2014 WO
2014064492 May 2014 WO
2014079478 May 2014 WO
2014079570 May 2014 WO
2014085663 June 2014 WO
2014111385 July 2014 WO
2014111794 July 2014 WO
2014161534 October 2014 WO
2014161535 October 2014 WO
2015077113 May 2015 WO
2015095088 June 2015 WO
2015095090 June 2015 WO
2015095146 June 2015 WO
2015127583 September 2015 WO
2016010954 January 2016 WO
Other references
  • WO2013153195—machine translation.
  • International Search Report, issued in connection with corresponding PCT application No. PCT/US2014/070432, Dec. 16, 2014, mailed May 13, 2015.
  • http://www.gtat.com/Collateral/Documents/English-US/Sapphire/12-21-12—GT—TouchScreen—V3—web.pdf.
  • E. Vanagas et al., “Glass Cutting by Femtosecond Pulsed Radiation”, J. Microlith., Microfa., Microsyst., 3(2) 358-363, 2004.
  • M. K. Bhuyan, et al., High aspect ratio taper-free microchannel fabrication using femtosecond Bessel beams, Jan. 18, 2010 / vol. 18, No. 2 / Optics Express 566.
  • Design of Diffractivephase Axicon Illuminated by a Gaussian-Profile Beam, Ziiangg Uo-Qing, D Ongb J-Ziien,Y Angg Uo-Zhen, and Gu Ben-Yuan, vol. 6, No. 5 Acta Physica Sinica May 1996, pp. 354.
  • High-resolution optical coherence tomography over a large depth range with an axicon lens, Zhihua Ding, Hongwu Ren, Yonghua Zhao, J. Stuart Nelson, and Zhongping Chen, Feb. 15, 2002 / vol. 27, No. 4 / Optics Letters 243.
  • Ilya Golub, Fresnel axicon, 1890 Optics Letters / vol. 31, No. 12 /Jun. 15, 2006.
  • M. K. Bhuyan, et al., High aspect ratio nanochannel machining using single shot femtosecond Bessel beams, Appl. Phys. Lett. 97, 081102 (2010).
  • Ricko Arimoto, et al., Imaging properties of axicon in a scanning optical system; Nov. 1, 1992 ; vol. 31, No. 31 / Applied Optics 6653.
  • D. Zeng, et al., Characteristic analysis of a refractive axicon system for optical trepanning; Optical Engineering 45(9), 094302 Sep. 2006.
  • Pavel Polynkin, et al., Extended filamentation with temporally chirped femtosecond Bessel-Gauss beams in air, Jan. 19, 2009 / vol. 17, No. 2 / Optics Express 575.
  • O.G. Kosareva, et al. Formation of extended plasma channels in a condensed medium upon axicon focusing of a femtosecond laser pulse, Quantum Electronics, 35(11), 1013-1014 (2005).
  • Kruger, et al., “Laser in micromachining of barium aluminum borosilicate glass with pulse durations between 20 fs and 3 ps,” , Applied Surface Science, 127-129(1998), 892-898.
  • Perry, et al., “Ultrashort-Pulse Laser Machining,” submitted to ICA of Lasers and Electro-Optics, Preprint Nov. 16-19, 1998, Pub. Jan. 22, 1999, International Congress on Applications of Lasers and Electro-Optics.
  • Herman, et al., “Laser Micromachining of ‘transparent’ fused silica with 1ps pulses and pulse trains”, SPIE Conference, San Jose, CA, Jan. 1999, vol. 3616-0277-786X/99.
  • Yoshino, et al., “Micromachining with a High Repetition Rate Femtosecond Fiber Laser,” Journal of laser Micro/Nanoengineering vol. 3, No. 3, 2008.
  • Abmmov et al., “Laser separation of chemically strengthened glass”, Physics Procedia, 5 (2010), 285-290.
  • Bagchi, “Fast Ion Beams From Intense, Femtosecond Laser Irradiated Nanostructured Surfaces.” Appl. Phys. B88: 167-173(2007).
  • Bhuyan, “Laser micro and nanostructuring using femtosecond Bessel beams.” Eur. Phys. J Special Topics 199: 101-110 (2011).
  • Bhuyan. “Ultrafast Bessel beams for high aspect ratio taper free micromachining of glass.” Nonlinear Optics and Applications IV, Proc of SPIE vol. 7728:7228IV-1-7228IV-8 (2010.).
  • Bhuyan, “Single-shot high aspect ratio bulk nanostructuring of fused silica using chirp-controlled ultrafast laser Bessel beams.” Applied Physics Letters 10-4, 021107-1-021107-4 (2014).
  • Courvoisier, “Applications of femtosecond Bessel beams to laser ablation.” Appl Phys A, 112:29-34, (2013).
  • Courvoisier, “Surface nanoprocessing with nondiffracting femtosecond Bessel beams.” Optics Letters, vol. 34, No. 20, 3163-3165, Oct. 15, 2009.
  • Stoian, “Spatial and temporal laser pulse design for material processing on ultrafast scales.” Appl. Phys. A, 114:119-127, (2014).
  • Velpula, “Ultrafast imaging of free carriers: controlled excitation with chirped ultrafast laser Bessel beams.” Prof of SPIE vol. 8967, 896711-1-896711-8, (2014.).
  • Yoshino, et al, “Micromachining with a High Repetition Rate Femtosecond Fiber Laser”, JLMN—Journal of Laser Micro/Nanoengineering vol. 3, No. 3, 2008, pp. 157-162.
  • Sundaram, et al, “Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses”, Nature Materials, vol. 1, Dec. 2002, pp. 217-224.
  • Abramov et al., “Laser separation of chemically strengthened glass”; Physics Procedia 5 (2010) 285-290, Elsevier.; doi: 10.1016/j.phpro.2010.08.054.
  • Arimoto et al., “Imaging properties of axicon in a scanning optical system”; Applied Optics, Nov. 1, 1992, vol. 31, No. 31, pp. 6653-6657.
  • “TruMicro 5000” Product Manual, Trumpf Laser GmbH + Co. KG, pp. 1-4, Aug. 2011.
  • Bhuyan et al., “High aspect ratio nanochannel machining using single shot femtosecond Bessel beams”; Applied Physics Letters 97, 081102 (2010); doi: 10.1063/1.3479419.
  • Bhuyan et al., “High aspect ratio taper-free microchannel fabrication using femtosecond Bessel beams”; Optics Express (2010) vol. 18, No. 2, pp. 566-574.
  • Cubeddu et al., “A compact time-resolved reflectance system for dual-wavelength multichannel assessment of tissue absorption and scattering”; Part of the SPIE Conference on Optical Tomography and Spectroscopy of Tissue III, San Jose, CA (Jan. 1999), SPIE vol. 3597, 0277-786X/99, pp. 450-455.
  • Cubeddu et al., “Compact tissue oximeter based on dual-wavelength multichannel time-resolved reflectance”; Applied Optics, vol. 38, No. 16, Jun. 1, 1999, pp. 3670-3680.
  • Ding et al., “High-resolution optical coherence tomography over a large depth range with an axicon lens”; Optic Letters, vol. 27, No. 4, pp. 243-245, Feb. 15, 2002, Optical Society of America.
  • “EagleEtch” Product Brochure, EuropeTec USA Inc., pp. 1-8, Aug. 1, 2014.
  • Girkin et al., “Macroscopic multiphoton biomedical imaging using semiconductor saturable Bragg reflector modelocked Lasers”; Part of the SPIE Conference on Commercial and Biomedical Applications of Ultrafast Lasers, San Jose, CA (Jan. 1999), SPIE vol. 3616, 0277-786X/99, pp. 92-98.
  • Glezer et al., “Ultrafast-laser driven micro-explosions in transparent materials”; Applied Physics Letters, vol. 71 (1997), pp. 882-884.
  • Golub, I., “Fresnel axicon”; Optic Letters, vol. 31, No. 12, Jun. 15, 2006, Optical Society of America, pp. 1890-1892.
  • Herman et al., “Laser micromachining of ‘transparent’ fused silica with 1-ps pulses and pulse trains”; Part of the SPIE Conference on Commercial and Biomedical Applications of Ultrafast Lasers, San Jose, CA (Jan. 1999), SPIE vol. 3616, 0277-786X/99, pp. 148-155.
  • Kosareva et al., “Formation of extended plasma channels in a condensed medium upon axicon focusing of a femtosecond laser pulse”; Quantum Electronics 35 (11) 1013-1014 (2005), Kvantovaya Elektronika and Turpion Ltd.; doi: 10.1070/QE2005v035n11ABEH013031.
  • Krüger et al., “Femtosecond-pulse visible laser processing of transparent materials”; Applied Surface Science 96-98 (1996) 430-438.
  • Krüger et al., “Laser micromachining of barium aluminium borosilicate glass with pluse durations between 20 fs and 3 ps”; Applied Surface Science 127-129 (1998) 892-898.
  • Krüger et al., “Structuring of dielectric and metallic materials with ultrashort laser pulses between 20 fs and 3 ps”; SPIE vol. 2991, 0277-786X/97, pp. 40-47.
  • Lapczyna et al., “Ultra high repetition rate (133 MHz) laser ablation of aluminum with 1.2-ps pulses”; Applied Physics A 69 [Suppl. ], S883-S886, Springer-Verlag (1999); doi: 10.1007/s003399900300.
  • Perry et al., “Ultrashort-pulse laser machining”; UCRL-JC-132159 Rev 1., Jan. 22, 1999, pp. 1-24.
  • Perry et al., “Ultrashort-pulse laser machining”; UCRL-ID-132159, Sep. 1998, pp. 1-38.
  • Perry et al., “Ultrashort-pulse laser machining of dielectric materials”; Journal of Applied Physics, vol. 85, No. 9, May 1, 1999, American Institute of Physics, pp. 6803-6810.
  • “Pharos High-power femtosecond laser system” product brochure; Light Conversion, Vilnius, LT; Apr. 18, 2011, pp. 1-2.
  • Polynkin et al., “Extended filamentation with temporally chirped femtosecond Bessel-Gauss beams in air”; Optics Express, vol., 17, No. 2, Jan. 19, 2009, OSA, pp. 575-584.
  • Serafetinides et al., “Ultra-short pulsed laser ablation of polymers”; Applied Surface Science 180 (2001) 42-56.
  • Sundaram et al., “Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses”; Nature Miracles, vol. 1, Dec. 2002, Nature Publishing Group (2002), pp. 217-224.
  • Vanagas et al., “Glass cutting by femtosecond pulsed irradiation”; J. Micro/Nanolith. MEMS MOEMS. 3(2), 358-363 (Apr. 1, 2004); doi: 10.1117/1.1668274.
  • Varel et al., “Micromachining of quartz with ultrashort laser pulses”; Applied Physics A 65, 367-373, Springer-Verlag (1997).
  • Yoshino et al., “Micromachining with a high repetition rate femtosecond fiber laser”; JLMN—Journal of Laser Micro/Nanoengineering vol. 3, No. 3 (2008), pp. 157-162.
  • Zeng et al. “Characteristic analysis of a refractive axicon system for optical trepanning”; Optical Engineering 45(9), 094302 (Sep. 2006), pp. 094302-1-094302-10.
  • Zhang et al., “Design of diffractive-phase axicon illuminated by a Gaussian-profile beam”; Acta Physica Sinica (overseas edition), vol. 5, No. 5 (May 1996) Chin. Phys. Soc., 1004-423X/96/05050354-11, pp. 354-364.
  • Abakians, H. et al.; Evaporative Cutting of a Semitransparent Body With a Moving CW Laser; Journal of Heat Transfer; Nov. 1988; pp. 924-930; vol. 110; ASME.
  • Ahmed, F. et al.; Display glass cutting by femtosecond laser induced single shot periodic void array; Applied Physics A Material Science & Processing; Jun. 3, 2008; pp. 189-192; vol. 93; Springer-Verlag.
  • Bagchi, S. et al.; Fast ion beams from intense, femtosecond laser irradiated nanostructured surfaces; Applied Physics B Lasers and Optics; Jun. 27, 2007; pp. 167-173; vol. 88; Springer-Verlag.
  • Bhuyan, M.K. et al.; Femtosecond non-diffracting Bessel beams and controlled nanoscale ablation; ResearchGate Conference Paper; Sep. 2011; pp. 1-4.
  • Bhuyan, M.K. et al.; Laser micro- and nanostructuring using femtosecond Bessel beams; The European Physical Journal Special Topics; Dec. 7, 2011; pp. 101-110; vol. 1999; EDP Sciences, Springer-Verlag.
  • Bhuyan, M.K. et al.; Single-shot high aspect ratio bulk nanostructuring of fused silica using chirp-controlled ultrafast laser Bessel beams; Applied Physics Letters; Jan. 14, 2014; pp. 021107-1-021107-4; vol. 104; AIP Publishing LLC.
  • Bhuyan, M.K. et al.; Ultrafast Bessel beams for high aspect ratio taper free micromachining of glass; Nonlinear Optics and Applications IV; 2010; pp. 77281V-1-77281V-8; vol. 7728; SPIE.
  • Case Design Guidelines for Apple Devices; Sep. 13, 2013; pp. 1-58; Apple Inc.
  • Chiao, R. Y. et al.; Self-Trapping of Optical Beams; Physical Review Letters; Oct. 12, 1964; pp. 479-482; vol. 13, No. 15.
  • Corning Eagle AMLCD Glass Substrates Material Information; Apr. 2005; pp. MIE 201-1-MIE 201-3; Corning Incorporated.
  • Corning 1737 AMLCD Glass Substrates Material Information; Aug. 2002; pp. MIE 101-1-MIE 101-3; Corning Incorporated.
  • Couairon, A. et al.; Femtosecond filamentation in transparent media; ScienceDirect Physical Reports; Feb. 6, 2007; pp. 47-189; vol. 441; Elsevier B.V.
  • Courvoisier, F. et al.; Applications of femtosecond Bessel beams to laser ablation; Applied Physics A Materials Science & Processing; Sep. 6, 2012; pp. 29-34; vol. 112; Springer-Verlag.
  • Courvoisier, F. et al.; Surface nanoprocessing with nondiffracting femtosecond Bessel beams; Optics Letters; Oct. 15, 2009; pp. 3163-3165; vol. 34, No. 20; Optical Society of America.
  • Dong, M. et al.; On-axis irradiance distribution of axicons illuminated by spherical wave; ScienceDirect Optics & Laser Technology; Sep. 2007; pp. 1258-1261; vol. 39; Elsevier Ltd.
  • Duocastella, M. et al.; Bessel and annular beams for materials processing; Laser & Photonics Reviews; 2012; pp. 607-621; vol. 6, No. 5.
  • Durnin, J.; Exact solutions for nondiffracting beams. I. The scalar theory; J. Opt. Soc. Am. A; Apr. 1987; pp. 651-654; vol. 4, No. 4; Optical Society of America.
  • Eaton, S. et al.; Heat accumulation effects in femtosecond laser-written waveguides with variable repetition rate; Optics Express; Jun. 13, 2005; pp. 4708-4716; vol. 13, No. 12; Optical Society of America.
  • Gattass, R. et al.; Micromachining of bulk glass with bursts of femtosecond laser pulses at variable repetition rates; Optics Express; Jun. 12, 2006; pp. 5279-5284; vol. 14, No. 12; Optical Society of America.
  • Gori, F. et al.; Analytical derivation of the optimum triplicator; Optics Communications; Dec. 1, 1998; pp. 13-16; vol. 157; Elsevier B.V.
  • Honda, M. et al.; A Novel Polymer Film that Controls Light Transmission; Progress in Pacific Polymer Science 3; 1994; pp. 159-169; Springer-Verlag Berlin Heidelberg.
  • Hu, Z. et al.; 5-Axis Laser Cutting Interference Detection and Correction Based on STL Model; Chinese Journal of Lasers; Dec. 2009; pp. 3313-3317; vol. 36, No. 12.
  • Huang, Z. et al.; Laser etching of glass substrates by 1064 nm laser irradiation; Applied Physics A Materials Science & Processing; Jun. 6, 2008; pp. 159-163; vol. 93; Springer-Verlag.
  • Juodkazis, S. et al.; Laser-Induced Microexplosion Confined in the Bulk of a Sapphire Crystal: Evidence of Multimegabar Pressures; Physical Review Letters; Apr. 28, 2006; pp. 166101-1-166101-4; vol. 96; The American Physical Society.
  • Karlsson, S. et al.; The Technology of Chemical Glass Strengthening—A Review; Glass Technology—European Journal of Glass Science and Technology Part A; Apr. 2010; pp. 41-54; vol. 51, No 2.
  • Levy, U. et al.; Design, fabrication, and characterization of circular Dammann gratings based on grayscale lithography; Optics Letters; Mar. 15, 2010; pp. 880-882; vol. 35, No. 6; Optical Society of America.
  • Liu, X. et al.; Laser Ablation and Micromachining with Ultrashort Laser Pulses; IEEE Journal of Quantum Electronics; Oct. 1997; p. 1706-1716; vol. 33, No. 10; IEEE.
  • Maeda, K. et al.; Optical performance of angle dependent light control glass; Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X; 1991; pp. 138-148; vol. 1536; SPIE.
  • Mbise, G. et al.; Angular selective window coatings; theory and experiments; J. Phys. D: Appl. Phys.; 1997; pp. 2103-2122; vol. 30; IOP Publishing Ltd.
  • McGloin, D. et al.; Bessel beams: diffraction in a new light; Contemporary Physics; Jan.-Feb. 2005; pp. 15-28; vol. 46; Taylor & Francis Ltd.
  • Merola, F. et al.; Characterization of Bessel beams generated by polymeric microaxicons; Measurement Science and Technology; May 15, 2012; pp. 1-10; vol. 23; IOP Publishing Ltd.
  • Mirkhalaf, M. et al.; Overcoming the brittleness of glass through bio-inspiration and micro-architecture; Nature Communications; Jan. 28, 2014; pp. 1-9; Macmillan Publishers Limited.
  • Romero, L. et al.; Theory of optimal beam splitting by phase gratings. II. Square and hexagonal gratings; J. Opt. Soc. Am. A; Aug. 2007; pp. 2296-2312; vol. 24, No. 8; Optical Society of America.
  • Salleo, A. et al.; Machining of transparent materials using an IR and UV nanosecond pulsed laser; Applied Physics A Materials Science & Processing; Sep. 20, 2000; pp. 601-608; vol. 71; Springer-Verlag.
  • Serafetinides, A. et al.; Polymer Ablation by Ultra-Short Pulsed Lasers; Proceedings of SPIE; 2000; pp. 409-415.
  • Shah, L. et al.; Micromachining with a High Repetition Rate Femtosecond Fiber Laser; JLMN—Journal of Laser Micro/Nanoengineering; Nov. 2008; pp. 157-162; vol. 3, No. 3.
  • Shealy, D. et al.; Geometric optics-based design of laser beam shapers; Opt. Eng.; Nov. 2003; pp. 3123-3138; vol. 42, No. 11; Society of Photo-Optical Instrumentation Engineers.
  • Stoian, R. et al.; Spatial and temporal laser pulse design for material processing on ultrafast scales; Applied Physics A Materials Science & Processing; Jan. 1, 2014; pp. 119-127; vol. 114; Springer-Verlag Berlin Heidelberg.
  • Thiele, E.; Relation between Catalytic Activity and Size of Particle; Industrial and Engineering Chemistry; Jul. 1939; pp. 916-920; vol. 31, No. 7.
  • Toytman, I. et al.; Optical breakdown in transparent media with adjustable axial length and location; Optic Express; Nov. 22, 2010; pp. 24688-24698; vol. 18, No. 24; Optical Society of America.
  • Velpula, P. et al.; Ultrafast imaging of free carriers: controlled excitation with chirped ultrafast laser Bessel beams; Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX; Proc. of SPIE; 2014; pp. 896711-1-896711-8; vol. 8967; SPIE.
  • Wang, Z. et al.; Investigation on CO2 laser irradiation inducing glass strip peeling for microchannel formation; Biomicrofluidics; Mar. 12, 2012; pp. 012820-1-012820-12; vol. 6; American Institute of Physics.
  • Ra & RMS: Calculating Surface Roughness; Harrison Eelectropolishing; 2012.
  • Wu, W. et al.; Optimal Orientation of the Cutting Head for Enhancing Smoothness Movement in Three-Dimensional Laser Cutting; Chinese Journal of Lasers; Jan. 2013; pp. 0103005-1-0103005-7, vol. 10, No. 1.
  • GT ASF Grown Sapphire Cover and Touch Screen Material; www.gtat.com; 2012; pp. 1-2; GTAT Corporation.
  • Xu, H. et al.; Optimization of 3D laser cutting head orientation based on minimum energy consumption; Int J Adv Manuf Technol; Jun. 28, 2014; pp. 1283-1291; vol. 74; Springer-Verlag London.
  • Yan, Y. et al.; Fiber structure to convert a Gaussian beam to higher-order optical orbital angular momentum modes; Optics Letters; Aug. 15, 2012; pp. 3294-3296; vol. 37, No. 16; Optical Society of America.
Patent History
Patent number: 9676167
Type: Grant
Filed: Oct 31, 2014
Date of Patent: Jun 13, 2017
Patent Publication Number: 20150165562
Assignee: Corning Incorporated (Corning, NY)
Inventors: Sasha Marjanovic (Painted Post, NY), Garrett Andrew Piech (Corning, NY), Sergio Tsuda (Horseheads, NY), Robert Stephen Wagner (Corning, NY)
Primary Examiner: Elizabeth Mulvaney
Application Number: 14/529,976
Classifications
Current U.S. Class: Laser Ablative Shaping Or Piercing (i.e., Nonetching, Devoid Of Chemical Agent Other Than Air) (264/400)
International Classification: B32B 3/00 (20060101); B32B 17/06 (20060101); C03B 33/02 (20060101); B23K 26/00 (20140101); B23K 26/06 (20140101); B23K 26/073 (20060101); B23K 26/0622 (20140101); B23K 103/00 (20060101);