Upper electrode for manufacturing semiconductors
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FIG. 1 is a front elevational view of an upper electrode for manufacturing semiconductors showing my new design;
FIG. 2 is a rear elevational view thereof;
FIG. 3 is a top plan view thereof;
FIG. 4 is a bottom plan view thereof;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a left side elevational view thereof;
FIG. 7 is a front elevational view thereof, showing the electrode in an opened state;
FIG. 8 is a rear elevational view thereof, showing the electrode in an opened state;
FIG. 9 is a top plan view thereof, showing the electrode in an opened state;
FIG. 10 is a bottom plan view thereof, showing the electrode in an opened state;
FIG. 11 is a right side elevational view thereof, showing the electrode in an opened state;
FIG. 12 is a left side elevational view thereof, showing the electrode in an opened state; and,
FIG. 13 is a reduced front elevational view thereof, showing the electrode in an opened state, with the broken-line disclosure being for illustrative purposes only and forming no part of the claimed design.
Type: Grant
Filed: Jul 28, 1997
Date of Patent: Aug 3, 1999
Assignee: Tokyo Electron Limited (Tokyo-To)
Inventor: Jun Ooyabu (Yamanashi-Ken)
Primary Examiner: Brian N. Vinson
Law Firm: Ladas & Parry
Application Number: 0/74,109
International Classification: 1501;