Power semiconductor device

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Description

FIG. 1 is a perspective view of the front, left and bottom sides of a power semiconductor device showing our new design;

FIG. 2 is a perspective view of the front, right and top sides thereof;

FIG. 3 is a front view thereof;

FIG. 4 is a rear view thereof;

FIG. 5 is a left side view thereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a top view thereof;

FIG. 8 is a bottom view thereof;

FIG. 9 is an end view of cutting part at 9-9, with omitting the interior mechanism thereof; and,

FIG. 10 is an end view of cutting part at 10-10, with omitting the interior mechanism thereof.

The broken line showing of unclaimed portion of the power semiconductor device is for the purpose of illustrating environmental structure only and forms no part of the claimed design.

Claims

The ornamental design for the power semiconductor device, as shown and described.

Referenced Cited
U.S. Patent Documents
D357672 April 25, 1995 Terasawa
D467869 December 31, 2002 Ando
D469059 January 21, 2003 Ando
D475012 May 27, 2003 Ando
D476622 July 1, 2003 Ando
D476959 July 8, 2003 Yamada
D798832 October 3, 2017 Hayashida
Patent History
Patent number: D827590
Type: Grant
Filed: Mar 18, 2016
Date of Patent: Sep 4, 2018
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Yukimasa Hayashida (Tokyo), Shinichi Iura (Tokyo), Hitoshi Uemura (Tokyo), Daisuke Oya (Tokyo), Kenji Hatori (Tokyo), Yasuhiro Sakai (Tokyo), Ryo Tsuda (Tokyo), Ryutaro Date (Tokyo)
Primary Examiner: Daniel Bui
Application Number: 29/558,550