Power semiconductor device
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The broken line showing of unclaimed portion of the power semiconductor device is for the purpose of illustrating environmental structure only and forms no part of the claimed design.
Claims
The ornamental design for the power semiconductor device, as shown and described.
Type: Grant
Filed: Mar 18, 2016
Date of Patent: Sep 4, 2018
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Yukimasa Hayashida (Tokyo), Shinichi Iura (Tokyo), Hitoshi Uemura (Tokyo), Daisuke Oya (Tokyo), Kenji Hatori (Tokyo), Yasuhiro Sakai (Tokyo), Ryo Tsuda (Tokyo), Ryutaro Date (Tokyo)
Primary Examiner: Daniel Bui
Application Number: 29/558,550