Diffraction grating coupled infrared photodetector
A diffraction grating coupled infrared photodetector for providing high performance detection of infrared radiation is described. The photodetector includes a three-dimensional diffractive resonant optical cavity formed by a diffraction grating that resonates over a range of infrared radiation wavelengths. By placing a limited number of p/n junctions throughout the photodetector, the photodetector thermal noise is reduced due to the reduction in junction area. By retaining signal response and reducing the noise, the sensitivity increases at a given operating temperature when compared to traditional photovoltaic and photoconductive infrared photodetectors up to the background limit. The photodetector device design can be used with a number of semiconductor material systems, can form one- and two-dimensional focal plane arrays, and can readily be tuned for operation in the long wavelength infrared and the very long wavelength infrared where sensitivity and noise improvements are most significant.
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The present invention relates to a photodetector sensitive to infrared radiation. In particular, the present invention provides for a diffraction grating coupled infrared photodetector with improved sensitivity by decreasing the thermal leakage current and thus the noise.
BACKGROUND OF THE INVENTIONIn the field of infrared (IR) imaging, the current objective is to provide large area focal plane arrays at low cost with high performance. InSb, HgCdTe, and quantum well infra-red photodetector (QWIP) technologies have demonstrated high performance large area focal plane arrays. Each of these technologies has various strengths and weaknesses. InSb photodetectors offer high performance and ease of fabrication, but must be cooled to approximately 80 K. HgCdTe photodetectors can be designed to operate in the middle wavelength IR (MWIR) corresponding to a wavelength range of 3 to 5 μm, the long wavelength IR (LWIR) corresponding to a wavelength range of 8 to 12 μm, or the very long wavelength IR (VLWIR) corresponding to a wavelength range of greater than 12 μm. However, HgCdTe photodetectors require very tight tolerances in material and fabrication uniformity to ensure high performance. QWIP photodetectors have been demonstrated in the MWIR, the LWIR, and the VLWIR while requiring only moderate tolerances in both material and fabrication uniformity.
Because photodetectors fabricated from HgCdTe have the greatest potential performance at a given operating temperature, significant time and effort have been expended to improve the HgCdTe starting material and fabrication process. While progress has been made, the cost of implementing these improvements is significant. Thus, there exists a need for a design that places fewer and/or less stringent requirements upon the starting material and/or the fabrication process.
SUMMARY OF THE INVENTIONIn one embodiment of the present invention, a photodetector comprises a plurality of intersecting elongate IR absorbing elements, an enlargement of a portion of one of the elongate IR absorbing elements to form a collector element, a carrier collector, a first electrical contact electrically connected to the carrier collector, a second electrical contact connected to the elongate IR absorbing elements, and a reflector. The plurality of intersecting elongate IR absorbing elements form a two-dimensional diffraction grating that is designed to resonate at the IR wavelength of interest. The collector element may be a number of shapes including a circle, an oval, or a diamond. The carrier collector is formed within a portion of the collector element.
In another embodiment of the present invention, the collector elements are formed midway between the intersections of the IR absorbing elements. Another embodiment of the present invention includes collector elements that are formed at both the intersections of the IR absorbing elements and midway between the intersections of the IR absorbing elements.
In another embodiment of the present invention, the diffraction grating is designed to resonate at two different wavelengths. The first wavelength resonates in a first direction of the grating while the second wavelength resonates in a direction normal to the first direction. The wavelengths are within ten percent of each other, thereby allowing a broader spectral response.
In each of these embodiments, the IR radiation is absorbed in the IR absorbing elements and the resultant electrical carriers are attracted to the nearest carrier collector. These electrical carriers are sensed in an external circuit via the first and second contacts. The electrical carriers may be sensed as a current if the external circuit is of low impedance or as a voltage if the external circuit is of high impedance.
Photodetectors comprising a single element, a one-dimensional line array of photodetectors, or a two-dimensional area array of photodetectors are envisioned. Depending upon the specific embodiment, a number of different material systems may be used to form the IR absorbing elements, the collector elements, the carrier collectors, and the first and second electrical contacts. These material systems include II-VI semiconductor compounds that include elements from group II and group VI of the periodic table and III-V semiconductor compounds that include elements from group III and group V of the periodic table.
The present invention is described in reference to the following Detailed Description and the drawings in which:
Various embodiments of the present invention are described in detail with reference to the drawings with corresponding elements having corresponding numbers throughout the drawings.
A photodetector having a unit cell 100 as shown in
While the photodetector can be formed of a number of materials, its greatest potential is realized using the HgCdTe material system. Alternative semiconductor material systems include, but are not limited to, InSb and InGaAs. If the HgCdTe material system is used, the elongate elements 102a,b, 103a,b would preferably be formed of n-type HgCdTe material, the particular alloy of HgCdTe depending upon the desired absorption wavelength. The collector element 104 would likewise be formed of the same n-type HgCdTe material. The carrier collector 106 would be formed of p-type HgCdTe, thereby forming a p/n junction. This carrier collector 106 could be formed by implantation or diffusion. Diffusion is preferable by growing a sacrificial p-type layer, patterning and etching away a portion of this sacrificial layer, and then performing a thermal diffusion process. The remaining portion of the sacrificial layer would then be removed after diffusion was complete. This method of forming the p/n junction results in a self-passivated junction as the junction is formed completely within the collector element 104. The first electrical contact 108 and the reflector 110 are formed of metal, preferably Au or a Au alloy by an evaporation process. Alternatively, the reflector could be a Bragg reflector 110 and formed of suitable semiconductor or dielectric material layers. The second electrical contact 112 is a heavily doped wider bandgap n-type HgCdTe layer in this example.
A further alternative not illustrated, but similar to
The operation of the various embodiments of the present invention will now be examined in detail. In each of the embodiments, incident IR radiation is absorbed in the elongate elements 102, 103. While the first elongate elements 102 and the second elongate elements 103 form the two-dimensional diffraction grating, due to the thickness of the elongate elements 102, 103, a three-dimensional diffractive resonant optical cavity (3D-DROC) is formed. By appropriately designing the 3D-DROC, a limited range of IR radiation wavelengths will resonate and be absorbed by the elongate elements 102, 103. It should be noted that this resonating IR radiation generates the highest electric field regions, and thus absorption, within the portion of the elongate elements 102, 103 nearest the collector elements 104, and in the collector elements 104 themselves. Due to the 3D-DROC, the quantum efficiency in this range of IR wavelengths remains high even though significant IR absorbing material has been removed. In the preferred embodiment, the elongate elements 102, 103 are n-type HgCdTe and the absorbed IR radiation creates electron-hole pairs. The minority carrier holes then drift toward the carrier collector 106. The carriers drift due to the electric field created between the n-type elongate elements 102, 103 and the p-type carrier collector 106, which form a p/n junction. This resultant current flow can be sensed as a voltage or a current in an external circuit via the first electrical contact 108 and the second electrical contact 112.
As maximum sensitivity requires collecting as many of the photogenerated minority carriers as possible, holes in the present example, the carriers must be collected before they recombine. For this reason a carrier collector 106 is preferably located within a diffusion length of the absorption location. As the diffusion length for holes in VLWIR HgCdTe is approximately 10 μm, a carrier collector 106 should be located at every intersection between the first elongate elements 102 and the second elongate elements 103 for a VLWIR photodetector. Thus, the embodiments shown in
To retain maximum sensitivity, it is desirable to minimize photogenerated carrier recombination at the surface of the elongate elements 102, 103. Including a first passivation layer 114 over the elongate elements 102, 103 does this. A second passivation layer 116a,b is desirable to insulate the carrier collector 106 from the reflector 110 so as not to short the carrier collector 106.
As the sensitivity is further determined by the thermally generated leakage current of the photodetector, it is desirable to minimize this source of noise. One way to minimize the thermal leakage current is by reducing the area of the carrier collector 106 p/n junction. By using four smaller carrier collectors 106a-d as shown in
Traditionally, the exposed high field regions near the corners or surface of a p/n junction generate additional excess leakage current requiring careful passivation of the junction. By forming the carrier collector 106 p/n junctions within the collector elements 104, the resulting device has no exposed junction, i.e., the junction is self-passivated. Furthermore, the self-passivated junction is passivated by the collector element 104 that is of the same semiconductor material, such as HgCdTe, as the junction itself This results in a perfect lattice match for the entire photodetector and does not require any additional processing related to the junction.
An added benefit of the smaller carrier collector 106 p/n junction is that the operating temperature can be increased. In particular, the reduced noise allows an increase in the operating temperature before a given noise level threshold is met when compared with ordinary IR photodetectors. Alternatively, for a given operating temperature, a diffraction grating coupled IR photodetector will have reduced noise, and thus increased sensitivity, when compared to ordinary IR photodetectors.
Due to the relatively narrow spectral resonance of the 3D-DROC formed by the elongate elements 102, 103, some IR radiation is not detected. As this undetected radiation decreases the possible signal magnitude, it is desirable to broaden the spectral resonance of the photodetector. This can be done by at least two methods that will be described next.
The first spectral broadening method is to use a biperiodic diffraction grating as shown in
An alternative method of broadening the spectral response that is not polarization dependent is shown in
The resonant wavelength of the 3D-DROC within the photodetector is primarily a function of the material geometry. The simplest variable is the period or unit cell size. In the VLWIR example, the period or unit cell size is 12 μm. By decreasing the unit cell size, the resonant wavelength can be decreased for operation in the long wavelength IR (LWIR) or middle wavelength IR (MWIR). Decreases in either the width or thickness of the elongate elements 102, 103 will also decrease the resonant wavelength. It must be noted that the absorption IR wavelength band of the elongate elements 102, 103 must match the resonant wavelength of the photodetector. As an example, if the elongate elements 102, 103 were formed of Hg0.8Cd0.2Te that strongly absorbs at 10 μm, the 3D-DROC should be designed to resonate at 10 μm for optimal performance.
The preferred configuration of the photodetector is a function of the external sensing circuit. The configurations shown in
While each of the embodiments has been described and illustrated as a unit cell or single photodetector, arrays of photodetectors are envisioned. The arrays of photodetectors can be a one-dimensional line array, or a two-dimensional area array of photodetectors. In an application requiring a one-dimensional or two-dimensional array of photodetectors, the array of photodetectors can be mated to a silicon-based readout integrated circuit for multiplexing the resulting signals. The mating of the array of photodetectors and the readout circuit can include the use of indium bumps to provide electrical, mechanical, and thermal contact between the photodetectors and the readout circuit.
Although the present invention has been fully described by way of examples with reference to the accompanying drawings, it is to be noted that various changes and modifications will be apparent to those skilled in the art. Therefore, such changes and modifications should be construed as being within the scope of the invention.
Claims
1. An infrared radiation photodetector comprising:
- a plurality of first elongate semiconductor elements for absorbing infrared radiation thereby creating electrical carriers, the plurality of first elongate elements being arranged to form a first one-dimensional diffraction grating for infrared radiation;
- a plurality of second elongate semiconductor elements for absorbing infrared radiation thereby creating electrical carriers, the plurality of second elongate elements being arranged to form a second one-dimensional diffraction grating for infrared radiation, the plurality of second elongate elements being substantially perpendicular to and intersecting the plurality of first elongate elements so as to form a two-dimensional diffraction grating having a first common major surface and a second common major surface, the second common major surface being opposite the first common major surface;
- at least a portion of at least one of the first and second elongate elements being enlarged so as to form a collector element, each collector element forming a portion of the first common major surface and a portion of the second common major surface;
- at least one semiconductor carrier collector for collecting electrical carriers thus created by the first and second elongate elements, each respective carrier collector being formed in a portion of a respective collector element so as to form a portion of one of the first common major surface and the second common major surface;
- a first electrical contact which is electrically connected to the at least one carrier collector;
- a second electrical contact which is electrically connected to at least one of the plurality of first elongate elements and the plurality of second elongate elements, the first contact and the second contact being disposed so as to provide for electrical carrier flow through the first and second elongate elements; and
- a reflector for infrared radiation, the reflector being closer to the second common major surface of the two-dimensional diffraction grating than to the first common major surface of the two-dimensional diffraction grating.
2. An infrared radiation photodetector in accordance with claim 1, wherein each respective one of the at least one collector element is formed at a respective intersection of a first elongate element and a second elongate element.
3. An infrared radiation photodetector in accordance with claim 1, wherein each intersection of a first elongate element and a second elongate element includes a respective collector element.
4. An infrared radiation photodetector in accordance with claim 1, wherein each respective one of the at least one collector element is formed in a first elongate element substantially midway between a first intersection of that first elongate element and one second elongate element and a second intersection of that first elongate element and a different second elongate element, the one second elongate element being adjacent to the different second elongate element.
5. An infrared radiation photodetector in accordance with claim 1, wherein a respective one of the at least one collector element is formed in each respective first elongate element substantially midway between a respective first intersection of that respective first elongate element and a respective one second elongate element and a respective second intersection of that respective first elongate element and a respective different second elongate element, the respective one second elongate element being adjacent to the respective different second elongate element.
6. An infrared radiation photodetector in accordance with claim 1,
- wherein a first one of the at least one collector element is formed at a respective intersection of a first elongate element and a second elongate element, and
- wherein at least a second one of the at least one collector element is formed in a second first elongate element substantially midway between a first intersection of that second first elongate element and one second elongate element and a second intersection of that second first elongate element and a different second elongate element, the one second elongate element being adjacent to the different second elongate element.
7. An infrared radiation photodetector in accordance with claim 1, wherein the plurality of first elongate elements, the plurality of second elongate elements, and the at least one collector element comprise n-type semiconductor material and the at least one carrier collector comprises p-type semiconductor material.
8. An infrared radiation photodetector in accordance with claim 1, wherein the plurality of first elongate elements, the plurality of second elongate elements, the at least one collector element, and the at least one carrier collector comprise II-VI semiconductor material.
9. An infrared radiation photodetector in accordance with claim 8, wherein the semiconductor material comprises HgCdTe semiconductor material.
10. An infrared radiation photodetector in accordance with claim 1, wherein the plurality of first elongate elements, the plurality of second elongate elements, the at least one collector element, and the at least one carrier collector comprise III-V semiconductor material.
11. An infrared radiation photodetector in accordance with claim 10, wherein the semiconductor material comprises InSb semiconductor material.
12. An infrared radiation photodetector in accordance with claim 10, wherein the semiconductor material comprises InGaAs semiconductor material.
13. An infrared radiation photodetector in accordance with claim 1, wherein the first contact and the at least one carrier collector are adjacent to the first common major surface of the two-dimensional diffraction grating and the second contact is adjacent to the second common major surface of the two-dimensional diffraction grating.
14. An infrared radiation photodetector in accordance with claim 1, wherein the first contact, the at least one carrier collector, and the second contact are adjacent the second common major surface of the two-dimensional diffraction grating.
15. An infrared radiation photodetector in accordance with claim 1, wherein each of the at least one collector element is a circular disk.
16. An infrared radiation photodetector in accordance with claim 1, wherein a period of the first one-dimensional diffraction grating and a period of the second one-dimensional diffraction grating are equal to each other.
17. An infrared radiation photodetector in accordance with claim 1,
- wherein the first diffraction grating resonates at a first infrared radiation wavelength;
- wherein the second diffraction grating resonates at a second infrared radiation wavelength; and
- wherein the first infrared radiation wavelength is within ten percent of the second infrared radiation wavelength.
18. An infrared radiation photodetector in accordance with claim 1, wherein the reflector comprises a metal or a metal alloy.
19. An infrared radiation photodetector in accordance with claim 1, wherein the reflector comprises a Bragg reflector.
20. An infrared radiation photodetector in accordance with claim 1, further comprising a first passivation layer disposed on the two-dimensional diffraction grating.
21. An infrared radiation photodetector in accordance with claim 1, further comprising a second passivation layer disposed between the second common major surface of the two-dimensional diffraction grating and the reflector.
22. An infrared radiation photodetector in accordance with claim 1:
- wherein the plurality of first elongate elements, the plurality of second elongate elements, and the at least one collector element comprise n-type semiconductor material and the at least one carrier collector comprises p-type semiconductor material, and
- wherein the reflector comprises a metal or a metal alloy.
23. An infrared radiation photodetector in accordance with claim 22, wherein each intersection of a first elongate element and a second elongate element includes a respective collector element.
24. An infrared radiation photodetector in accordance with claim 22, wherein the plurality of first elongate elements, the plurality of second elongate elements, the at least one collector element, and the at least one carrier collector comprise II-VI semiconductor material.
25. An infrared radiation photodetector in accordance with claim 22, wherein the plurality of first elongate elements, the plurality of second elongate elements, the at least one collector element, and the at least one carrier collector comprise III-V semiconductor material.
26. An infrared radiation photodetector in accordance with claim 22, wherein the first contact, the at least one carrier collector, and the second contact are adjacent the second common major surface of the two-dimensional diffraction grating.
27. An infrared radiation photodetector in accordance with claim 22, further comprising a first passivation layer disposed on the two-dimensional diffraction grating.
28. An infrared radiation photodetector in accordance with claim 22, further comprising a second passivation layer disposed between the second common major surface of the two-dimensional diffraction grating and the metallic reflector.
29. An infrared radiation photodetector in accordance with claim 1:
- wherein the plurality of first elongate elements, the plurality of second elongate elements, and the at least one collector element comprise n-type HgCdTe semiconductor material and the at least one carrier collector comprises p-type HgCdTe semiconductor material,
- wherein a period of the first one-dimensional diffraction grating and a period of the second one-dimensional diffraction grating are equal to each other,
- wherein each intersection of a first elongate element and a second elongate element includes a respective collector element,
- wherein the first contact, the at least one carrier collector, and the second contact are adjacent the second common major surface of the two-dimensional diffraction grating, and
- wherein the reflector comprises a metal or a metal alloy.
30. An infrared radiation photodetector focal plane array including a plurality of photodetector pixel structures, each of the pixel structures comprising:
- a plurality of first elongate semiconductor elements for absorbing infrared radiation thereby creating electrical carriers, the plurality of first elongate elements being arranged to form a first one-dimensional diffraction grating for infrared radiation;
- a plurality of second elongate semiconductor elements for absorbing infrared radiation thereby creating electrical carriers, the plurality of second elongate elements being arranged to form a second one-dimensional diffraction grating for infrared radiation, the plurality of second elongate elements being substantially perpendicular to and intersecting the plurality of first elongate elements so as to form a two-dimensional diffraction grating having a first common major surface and a second common major surface, the second common major surface being opposite the first common major surface;
- at least a portion of at least one of the first and second elongate elements being enlarged so as to form a collector element, each collector element forming a portion of the first common major surface and a portion of the second common major surface;
- at least one semiconductor carrier collector for collecting electrical carriers thus created by the first and second elongate elements, each respective carrier collector being formed in a portion of a respective collector element so as to form a portion of one of the first common major surface and the second common major surface;
- a first electrical contact which is electrically connected to the at least one carrier collector;
- a second electrical contact which is electrically connected to at least one of the plurality of first elongate elements and the plurality of second elongate elements, the first contact and the second contact being disposed so as to provide for electrical carrier flow through the first and second elongate elements; and
- a reflector for infrared radiation, the reflector being closer to the second common major surface of the two-dimensional diffraction grating than to the first common major surface of the two-dimensional diffraction grating.
31. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein each respective one of the at least one collector element is formed at a respective intersection of a first elongate element and a second elongate element in each one of the pixel structures.
32. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein each intersection of a first elongate element and a second elongate element in each one of the pixel structures includes a respective collector element.
33. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein each respective one of the at least one collector element in each one of the pixel structures is formed in a first elongate element substantially midway between a first intersection of that first elongate element and one second elongate element and a second intersection of that first elongate element and a different second elongate element, the one second elongate element being adjacent to the different second elongate element.
34. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein a respective one of the at least one collector element in each one of the pixel structures is formed in each respective first elongate element substantially midway between a respective first intersection of that respective first elongate element and a respective one second elongate element and a respective second intersection of that respective first elongate element and a respective different second elongate element, the respective one second elongate element being adjacent to the respective different second elongate element.
35. An infrared radiation photodetector focal plane array in accordance with claim 30,
- wherein a first one of the at least one collector element in each one of the pixel structures is formed at a respective intersection of a first elongate element and a second elongate element, and
- wherein at least a second one of the at least one collector element in each one of the pixel structures is formed in a second first elongate element substantially midway between a first intersection of that second first elongate element and one second elongate element and a second intersection of that second first elongate element and a different second elongate element, the one second elongate element being adjacent to the different second elongate element.
36. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein the plurality of first elongate elements, the plurality of second elongate elements, and the at least one collector element comprise n-type semiconductor material and the at least one carrier collector comprises p-type semiconductor material in each one of the pixel structures.
37. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein the plurality of first elongate elements, the plurality of second elongate elements, the at least one collector element, and the at least one carrier collector comprise II-VI semiconductor material in each one of the pixel structures.
38. An infrared radiation photodetector focal plane array in accordance with claim 37, wherein the semiconductor material comprises HgCdTe semiconductor material in each one of the pixel structures.
39. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein the plurality of first elongate elements, the plurality of second elongate elements, the at least one collector element, and the at least one carrier collector comprise III-V semiconductor material in each one of the pixel structures.
40. An infrared radiation photodetector focal plane array in accordance with claim 39, wherein the semiconductor material comprises InSb semiconductor material in each one of the pixel structures.
41. An infrared radiation photodetector focal plane array in accordance with claim 39, wherein the semiconductor material comprises InGaAs semiconductor material in each one of the pixel structures.
42. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein the first contact and the at least one carrier collector are adjacent to the first common major surface of the two-dimensional diffraction grating and the second contact is adjacent to the second common major surface of the two-dimensional diffraction grating in each one of the pixel structures.
43. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein the first contact, the at least one carrier collector, and the second contact are adjacent the second common major surface of the two-dimensional diffraction grating in each one of the pixel structures.
44. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein each of the at least one collector element in each one of the pixel structures is a circular disk.
45. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein a period of the first one-dimensional diffraction grating and a period of the second one-dimensional diffraction grating are equal to each other in each one of the pixel structures.
46. An infrared radiation photodetector focal plane array in accordance with claim 30,
- wherein the first diffraction grating in each one of the pixel structures resonates at a first infrared radiation wavelength;
- wherein the second diffraction grating in each one of the pixel structures resonates at a second infrared radiation wavelength; and
- wherein the first infrared radiation wavelength is within ten percent of the second infrared radiation wavelength in each one of the pixel structures.
47. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein the reflector in each one of the pixel structures comprises a metal or a metal alloy.
48. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein the reflector in each one of the pixel structures comprises a Bragg reflector.
49. An infrared radiation photodetector focal plane array in accordance with claim 30, further comprising a first passivation layer disposed on the two-dimensional diffraction grating in each one of the pixel structures.
50. An infrared radiation photodetector focal plane array in accordance with claim 30, further comprising a second passivation layer disposed between the second common major surface of the two-dimensional diffraction grating and the reflector in each one of the pixel structures.
51. An infrared radiation photodetector focal plane array in accordance with claim 30:
- wherein the plurality of first elongate elements, the plurality of second elongate elements, and the at least one collector element comprise n-type semiconductor material and the at least one carrier collector comprises p-type semiconductor material in each one of the pixel structures, and
- wherein the reflector in each one of the pixel structures comprises a metal or a metal alloy.
52. An infrared radiation photodetector focal plane array in accordance with claim 51, wherein each intersection of a first elongate element and a second elongate element includes a respective collector element in each one of the pixel structures.
53. An infrared radiation photodetector focal plane array in accordance with claim 51, wherein the plurality of first elongate elements, the plurality of second elongate elements, the at least one collector element, and the at least one carrier collector comprise II-VI semiconductor material in each one of the pixel structures.
54. An infrared radiation photodetector focal plane array in accordance with claim 51, wherein the plurality of first elongate elements, the plurality of second elongate elements, the at least one collector element, and the at least one carrier collector comprise III-V semiconductor material in each one of the pixel structures.
55. An infrared radiation photodetector focal plane array in accordance with claim 51, wherein the first contact, the at least one carrier collector, and the second contact are adjacent the second common major surface of the two-dimensional diffraction grating in each one of the pixel structures.
56. An infrared radiation photodetector focal plane array in accordance with claim 51, further comprising a first passivation layer disposed on the two-dimensional diffraction grating in each one of the pixel structures.
57. An infrared radiation photodetector focal plane array in accordance with claim 51, further comprising a second passivation layer disposed between the second common major surface of the two-dimensional diffraction grating and the metallic reflector in each one of the pixel structures.
58. An infrared radiation photodetector focal plane array in accordance with claim 30:
- wherein the plurality of first elongate elements, the plurality of second elongate elements, and the at least one collector element comprise n-type HgCdTe semiconductor material and the at least one carrier collector comprises p-type HgCdTe semiconductor material in each one of the pixel structures,
- wherein a period of the first one-dimensional diffraction grating and a period of the second one-dimensional diffraction grating are equal to each other in each one of the pixel structures,
- wherein each intersection of a first elongate element and a second elongate element includes a respective collector element in each one of the pixel structures,
- wherein the first contact, the at least one carrier collector, and the second contact are adjacent the second common major surface of the two-dimensional diffraction grating in each one of the pixel structures, and
- wherein the reflector in each one of the pixel structures comprises a metal or a metal alloy.
59. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein the focal plane array is a one-dimensional focal plane array.
60. An infrared radiation photodetector focal plane array in accordance with claim 30, wherein the focal plane array is a two-dimensional focal plane array.
61. An infrared radiation photodetector in accordance with claim 1, wherein at least one of the collector elements includes a plurality of carrier collectors formed therein.
62. An infrared radiation photodetector in accordance with claim 1, wherein at least one of the collector elements is diamond-shaped.
63. An infrared radiation photodetector in accordance with claim 62, wherein a period of the second one-dimensional diffraction grating is greater than a period of the first one-dimensional diffraction grating.
64. An infrared radiation photodetector in accordance with claim 1, wherein at least one of the collector elements is oval-shaped.
65. An infrared radiation photodetector in accordance with claim 64, wherein a period of the second one-dimensional diffraction grating is greater than a period of the first one-dimensional diffraction grating.
66. An infrared radiation photodetector in accordance with claim 1, wherein a period of the second one-dimensional diffraction grating is greater than a period of the first one-dimensional diffraction grating.
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Type: Grant
Filed: Dec 6, 2006
Date of Patent: Jan 1, 2013
Assignee: Xylon LLC (Las Vegas, NV)
Inventors: Lewis T. Claiborne (Richardson, TX), Pradip Mitra (Colleyville, TX)
Primary Examiner: Kiet T Nguyen
Application Number: 11/635,819
International Classification: H01L 31/0352 (20060101);