Abstract: The system is configured to locate, track and/or analyze activities of living beings in an environment. The system does not require the input of personal biometric data. The sensor system detects infrared (IR) energy from a living being moving in an environment, determines a temperature of the living being based on IR energy data of the IR energy, projects the temperature onto a grid having sequential pixels, determines serial changes of the temperature in the sequential pixels and determines a trajectory of the living being based on the serial changes of the temperature in the sequential pixels.

Abstract: A first device may generate optical signals of different polarizations. Photodiodes may use the optical signals to transmit wireless signals at different polarizations and at a frequency greater than 100 GHz using the optical signals. A second device may receive the wireless signals and may convert the wireless signals into optical signals. A Stokes vector receiver on the second device may generate Stokes vectors based on the optical signals. Control circuitry on the second device may use the Stokes vectors generated for a series of training data in the wireless signals to generate a rotation matrix that characterizes polarization rotation between the first and second devices. The control circuitry may multiply wireless data in subsequently received wireless signals by the rotation matrix to mitigate the polarization rotation and other transmission impairments while using minimal resources.

Abstract: A driver can be configured to provide sensed phase currents as feedback to a controller to indicate the output currents from each phase of a switch mode power supply (SMPS). The driver can be configured to temperature compensate the sensed currents in one of two ways. If a temperature sensor is directly coupled to the driver, then the driver may be configured to temperature compensate the sensed currents from each phase based on a temperature measurement made by the temperature sensor. If a temperature sensor is not directly coupled to the driver, then the driver may be configured to temperature compensate the sensed current from each phase based on a temperature signal received from a bus coupled to the driver. The bus can communicate the temperature signal so that multiple drivers can utilize one temperature sensor.

Abstract: A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.

Abstract: A method and a system are described for improving a dynamic range of a CMOS image sensor by pixel-embedded signal amplification. An electromagnetic radiation is incident for a predetermined duration on a pixel array including a plurality of photodiodes. The photodiodes release electrons in form of an input electronic signal and the released input signal is temporarily stored in a storage node. The said input signal is then transferred to a gate of an in-pixel amplifier, which is configured to dynamically alternate between modes of capacitance and switched biasing, using a single in-pixel switch. Then, the in-pixel amplifier is modulated while in capacitance mode for a voltage build-up and this augment gain of the input signal. Thereafter, the in-pixel amplifier alternates to a switched biasing mode for suppression of noise signals. Finally, a resultant electronic signal is generated with a high gain after processing and suppression of the noise signals.

Abstract: A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.

Abstract: A light source device includes a substrate, a light emitting unit, a frame, a light permeable member, and a metal shield. An upper electrode layer and a lower electrode layer of the substrate are respectively disposed on two opposite sides of the substrate, and are electrically coupled to each other. The light emitting unit is disposed on the upper electrode layer. The frame is disposed on the substrate and is arranged around the light emitting unit. The light permeable member is disposed on the frame and covers the light emitting unit. The metal shield is fixed to an inner side of the frame and is connected to the ground pad of the upper electrode layer. The metal shield is arranged around the outer side of the light emitting unit.

Abstract: An infrared image sensor includes a first integrate circuit (IC), a bolometer disposed on or above one surface of the first IC configured to detect infrared rays passing through a lens module, a via electrically connecting the first IC and the bolometer, and a reflective layer disposed between the first IC and the bolometer, wherein the first IC includes at least one of a read-out (RO) element configured to perform analog processing for the bolometer to generate infrared sensing information and an image signal process (ISP) element configured to perform digital processing based on the bolometer to generate infrared image information, and at least one of an autofocusing (AF) control element and an optical image stabilization (OIS) control element configured to adjust a positional relationship between the lens module and the bolometer.

Abstract: Provided a fingerprint identification substrate and a manufacturing method therefor, a identification method, and a display apparatus. The fingerprint identification substrate includes a substrate and at least two kinds of identification pixels disposed on the substrate, a first identification pixel includes a first photodiode and a second identification pixel includes a second photodiode. The first photodiode includes a first electrode, a first photoelectric conversion layer and a second electrode, the second photodiode includes the first electrode, a second photoelectric conversion layer and the second electrode, and the first photoelectric conversion layer and the second photoelectric conversion layer have different spectral response characteristics to red light or infrared light.

Abstract: A photodetector array includes a substrate, and an array of pixels over the substrate. Each pixel includes a set of diffraction gratings directly on a semiconductor photodetector. A pitch of the set of diffraction gratings associated with each pixel in the array of pixels are different to enable each pixel to detect a specific wavelength of light different than other pixels of the array of pixels. An air cavity may be provided in the substrate under the germanium photodetector to improve light absorption. A method of forming the photodetector array is also disclosed.

Abstract: Systems for measuring a concentration of a target species include a first and second tunable diode laser generating laser light at a respective first and second wavelength each corresponding to respective absorption lines of the target species. A first optical fiber is optically coupled to the first tunable diode laser, and does not support a fundamental mode at the second wavelength. A second optical fiber is coupled to the second tunable diode laser and does not support a fundamental mode at the first wavelength. A fiber bundle includes respective distal ends of the first and second optical fibers, which are stripped of their respective coatings and arranged with their claddings adjacent to each other. A pitch head is configured to project respective optical beams from the fiber bundle through a measurement zone. A catch head located across the measurement zone receives the projected beams and directs them to a sensor.

Abstract: A structure composed of multiple layers that consist of 7 stages of photon and electron management, enhancement, and conversion for the purposes of photovoltaic applications is described. The invention consists of one or more layers comprised of: 1) an energy dependent up and down conversion layer optimized for a particular wavelength such as infrared; 2) a layer for multiple implementations of light capturing and trapping; 3) a layer for photonic and plasmonic enhancement of captured and trapped light; 4) a layer for converting photons to electrons; 5) a layer for multiplying electrons; 6) a layer for storing generated electrons; and 7) a layer for using electrons for power. One or more layers may serve simultaneous purposes.

Abstract: A device for monitoring a health parameter of a person is disclosed. The device includes a semiconductor substrate including at least one transmit component and multiple receive components, at least one transmit antenna configured to transmit millimeter range radio waves over a 3D space below the skin surface of a person, and multiple receive antennas configured to receive radio waves, the received radio waves including a reflected portion of the transmitted radio waves, wherein the semiconductor substrate includes circuits for processing signals received on the multiple receive antennas, wherein the semiconductor substrate includes at least one output configured to output a signal that corresponds to a health parameter of a person in response to received radio waves, and wherein the at least one transmit antenna is collocated with the at least one transmit component and the multiple receive antennas are collocated with respective ones of the multiple receive components.

Abstract: In an electromagnetic wave generation device including a plurality of electromagnetic wave generation elements, an instantaneous maximum power consumption during an electromagnetic wave generation operation is reduced. Specifically, the electromagnetic wave generation device includes a plurality of electromagnetic wave generation elements that are divided into a plurality of groups, and a control unit that causes the plurality of electromagnetic wave generation elements to oscillate while shifting a timing in units of group. For example, the control unit causes the plurality of electromagnetic wave generation elements to oscillate such that when the number of the plurality of groups is n, an oscillation start timing of the group that performs mth oscillation (m is a natural number equal to or larger than 2 and equal to or smaller than n) is the same timing as or after an oscillation end timing of the group that performs (m?1)th oscillation.

Abstract: An absorber structure for a thermal detector, the absorber structure including edges defining a basic form, a plurality of first legs of electrically conducting material joined in an electrically conductive manner to form, between the edges of the absorber structure, a grid having openings, the first legs forming at least one continuous connection between the edges of the absorber structure; and a plurality of second legs of electrically conducting material joined in an electrically conductive manner to the first legs, wherein the second legs protrude from the first legs into the openings of the grid and terminate at points of termination located at a distance from adjacent first legs.

Abstract: A method for measuring the thickness of a specimen, according to an embodiment, can measure the thickness of a specimen having multiple layers in a contactless and non-destructive manner. In addition, when the refractive indexes of materials forming the respective layers are already known, the thicknesses of the respective layers can be integrally measured through differences in reflection times of terahertz waves with respect to the respective layers of the specimen, thereby measuring the thickness of the specimen, such that the time taken for measuring the thickness of the specimen can be reduced.

Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition for forming a pattern used as a mask in an ion implanting, including a resin including a repeating unit having an acid-decomposable group, a photoacid generator, and an additive having a melting point or glass transition temperature of lower than 25° C. and a molecular weight of 180 or more, in which a content of the additive is 1% by mass or more with respect to a total solid content in the composition.

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

Abstract: An optical tomography imaging system includes a signal generator, at least one light emitter, at least one light receiver, a signal processor, and an image processor. The signal generator is configured to generate a periodic signal and a reference signal. The light emitter is configured to be activated by the periodic signal to generate an optical signal passing through an object under test. The light receiver is configured to receive and convert the optical signal passing through the object under test into an electrical signal. The signal processor is configured to generate a comparison signal according to the electrical signal and the reference signal. The image processor is configured to acquire a plurality of disassembled sine waves from the comparison signal and generate a reconstructed image according to the disassembled sine waves.

Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.

Abstract: An apparatus and method for a detector are disclosed. The apparatus disclosed contains a non-absorbing layer shaped as one or more pyramids, one or more collector regions, an absorber layer disposed between the one or more collector regions and the non-absorbing layer, a first electrical contact, and a second electrical contact, wherein the absorber layer is configured to absorb photons of incident light and generate minority electrical carriers and majority electrical carriers, wherein the one or more collector regions are electrically connected with the absorber layer and with the first electrical contact for extracting the minority electrical carriers, and the absorber layer is electrically connected with the one or more collector regions and with the second electrical contact to extract the majority electrical carriers.

Abstract: An apparatus is provided which comprises: a cavity made in a substrate of a printed circuit board (PCB); a plurality of solder balls embedded in the cavity; and a horizontal trace within the substrate, wherein the horizontal trace is partially directly under the plurality of solder balls and is coupled to the plurality of solder balls and another trace or via in the substrate such that a substrate region under the plurality of solder balls is independent of a stop layer under the cavity.

Abstract: A biological data measurement device according to the present invention includes a substrate disposed at a position spaced a predetermined distance from a body surface BS of a living organism as a measuring object via a support member so that an air layer is formed between the substrate and the body surface, in which the substrate is provided with a thermometer including an infrared thermometer for measuring a body surface temperature and a substrate thermometer for measuring a substrate temperature, thereby measuring a deep body temperature with higher accuracy.

Abstract: A photodetecting device for detecting different wavelengths includes a first photodetecting component including a substrate and a second photodetecting component including second absorption region. The substrate includes a first absorption region configured to absorb photons having a first peak wavelength and to generate first photo-carriers. The second absorption region is supported by the substrate and configured to absorb photons having a second peak wavelength and to generate second photo-carriers. The first absorption region and the second absorption region are overlapped along a vertical direction.

Abstract: An infrared photo-detector array and a method for manufacturing it are disclosed. The infrared photo-detector array contains a plurality of pyramid-shaped structures, a first light-absorbing material supporting the plurality of the pyramid-shaped structure, a carrier-selective electronic barrier supporting the first light-absorbing material, a second light-absorbing material supporting the carrier-selective electronic barrier, and a metal reflector supporting the second light-absorbing material, wherein the plurality of the pyramid shaped structures are disposed on the side of the photo-detector array facing the incident light to be detected and the metal reflector is disposed on the opposite side of the photo-detector array. The method disclosed teaches how to manufacture the infrared photo-detector array.

Abstract: A process for fabricating a hybrid optical detector, includes the steps of: assembling, via an assembly layer, on the one hand an absorbing structure and on the other hand a read-out circuit, locally etching, through the absorbing structure, the assembly layer and the read-out circuit up to the contacts, so as to form electrical via-holes, depositing a protective layer on the walls of the via-holes, producing a doped region of a second doping type different from the first doping type by diffusing a dopant into the absorbing structure through the protective layer, the region extending annularly around the via-holes so as to form a diode, depositing a metallization layer on the walls of the via-holes allowing the doped region to be electrically connected to the contact.

Abstract: In a thermal infrared detector having trench structures, at least one sensor element is provided between the trench structures, an etching hole through which the sensor element is hollowed out and thereby thermally insulated is provided in a substrate rear surface or on the periphery of a pixel area, and an opening portion is provided below the pixel area.

Abstract: Aspects and examples described herein provide a lightweight radiation shielding structure for infrared cameras. In one example, a top radiation shielding element and a bottom radiation shielding element are placed as close as possible to an infrared detector to minimize excess weight added to the infrared camera while providing optimal radiation shielding. Such aspects and examples provide important functionality for numerous weight-sensitive applications in high-radiation environments.

Abstract: It is an object to provide a semiconductor device with less power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to provide a semiconductor device with high reliability as a semiconductor device including a thin film transistor using an oxide semiconductor layer. In the semiconductor device, a gate electrode layer (a gate wiring layer) intersects with a wiring layer which is electrically connected to a source electrode layer or a drain electrode layer with an insulating layer which covers the oxide semiconductor layer of the thin film transistor and a gate insulating layer interposed therebetween. Accordingly, the parasitic capacitance formed by a stacked-layer structure of the gate electrode layer, the gate insulating layer, and the source or drain electrode layer can be reduced, so that low power consumption of the semiconductor device can be realized.

Abstract: An image sensor for serial peripheral interface (SPI) slave circuit and a pixel array circuit therein are provided. The pixel array includes a plurality of pixel units disposed in an image sensor with the SPI slave circuit. Each pixel unit includes a photo sensor, N storages and at least one transmission circuit, wherein N is a positive integer greater than or equal to two. At least one of the N storages is coupled to the photo sensor, which are connected with each other in serial or parallel, and configured to store charges accumulated by the photo sensor at different exposures. Each transmission circuit is coupled to a corresponding storage, and is controlled by a corresponding transmission control signal to transmit the stored charge of the corresponding storage during a certain time period.

Abstract: The invention is directed to an arrangement for detecting the intensity distribution of components of the electromagnetic field in beams of radiation. The object of the invention is met, according to the invention, in that a high-resolution two-dimensional intensity sensor array and a field vector detector array comprising different regions with individual detector structures for two transverse and longitudinal field vector components Ex, Ey, Ez are combined, wherein the detector structures are formed as nanostructures, metallic jacket-shaped tips with different apices, for utilization of localized plasmon resonance (LPR) of the individual detector structures and localized surface plasmons (LSP) excited through LPR for a polarization selection of the field distribution according to field vector components Ex, Ey, Ez and transmission thereof to associated sensor elements by means of surface plasmon polaritons (SPP) and wave guiding (WGM).

Abstract: A structure is disclosed. The structure contains a second detector disposed above a first detector, wherein the first detector contains a first absorber layer, a first barrier layer disposed above the first absorber layer, a first contact layer disposed above the first barrier layer, and wherein the second detector contains a second contact layer disposed above the first contact layer, a second barrier layer disposed above the second contact layer, a second absorber layer disposed above the second barrier layer.

Abstract: Disclosed are methods of fabricating short-wave infrared detector arrays including readout and absorption wafers connected by a recrystallized a-Si layer. The absorber wafer includes a SWIR conversion layer with a Ge1-xSnx alloy composition. Process steps realize the readout wafer and a portion of the absorption wafer, including bonding the readout wafer and a first portion of the absorption wafer. The a-Si intermediate layer linking the readout wafer and the first portion of the absorption wafer the a-Si intermediate layer is recrystallized by applying heat by a light source. The method assures a temperature profile between the light entrance surface and the CMOS electronic layer of the readout wafer maintaining readout layer temperature <350° C. during recrystallization. After the recrystallization process step the absorption wafer is completed by depositing the SWIR conversion layer. Also disclosed is a SWIR detector array realized by the method and SWIR detector array applications.

Abstract: A metasurface integrated microbolometer having a sensing layer (e.g., SixGeyO1-x-y). The presence of the metasurface provides selectivity with respect to wavelength, polarization and angle-of-incidence. The presence of the metasurface into the microbolometer affects conversion of electromagnetic to thermal energy, thermal response, electrical integration of the microbolometer, and the tradeoff between resistivity and temperature coefficient of resistance, thereby allowing the ability to obtain a sensing with high temperature coefficient of resistance with lower resistivity values than that of films without the metasurface. The presence of the metasurface removes the need for a Fabry-Perot cavity.

Abstract: A self-sealing drain vent cover that allows for a vacuum to be created within piping of a plumbing fixture for unclogging purposes. The vent cover includes a outer cover and a seal insert. The outer cover includes a first tubular body and a first disk top to yield a closed off structure to support the seal insert. The first disk top is terminally and perimetrically connected to the first tubular body. The seal insert adheres to a surface around an overflow port to enclose said port. The seal insert includes a second tubular body, a second disk top, and an annular self-sealing mechanism. The second disk top is terminally and perimetrically connected to the second tubular body. The seal insert is mounted within the outer cover. The self-sealing mechanism is positioned adjacent to a bottom end of the second tubular body and is concentrically mounted to the second tubular body.

Abstract: A thermo-mechanical resonating microbolometer has a graphene absorber suspended above a metallic silicon substrate to form a mechanical resonator. Microelectronic circuitry electrically connected to the graphene resonator and the metallic silicon substrate drives electronically the motion of the graphene absorber. Shifts in the mechanical resonant frequency of the graphene layer due to the absorption of incident radiation is measured electronically or using optical interferometry. A bolometer sensor array may be fabricated using such graphene microbolometer elements.

Abstract: A reading circuit for an infrared detector, includes: pixel driving circuits arranged in a matrix; vertical selection lines provided for respective rows of the pixel driving circuits; horizontal selection lines provided for respective columns of the pixel driving circuits; a vertical selection circuit configured to output a row selection signal to the vertical selection lines; and a horizontal selection circuit configured to output a column selection signal to the horizontal selection lines to read, to a reading line, a signal from pixel driving circuits for one row selected by the row selection signal, wherein each pixel driving circuit includes a driving circuit of the infrared detector, and a switching circuit configured to switch whether or not to input a test signal to the driving circuit, based on the row selection signal output to a corresponding vertical selection line and the column selection signal output to a corresponding horizontal selection line.

Abstract: A proximity sensor with a sliced integration time sensing mechanism and a sensing method thereof are provided. A light transmitter emits a sensing light toward a detected object during a first phase time. A light receiver receives a first light signal formed by the sensing light reflected by the detected object and an ambient light during the first phase time, and receives a second light signal of the ambient light during a second phase time. A first brightness of the first light signal is integrated over the first phase time to form a first integrated brightness value. A second brightness of the second light signal is integrated over the second phase time to form a second integrated brightness value. The light receiver subtracts the second integrated brightness value from the first integrated brightness value to obtain a first integrated brightness correction value by phase cancellation.

Abstract: Systems and methods are directed to vertical legs for an infrared detector. For example, an infrared imaging device may include a microbolometer array in which each microbolometer includes a bridge and a vertical leg structure that couples the bridge to a substrate such as a readout integrated circuit. The vertical leg structure may run along a path that is parallel to a plane defined by the bridge and may be oriented perpendicularly to the plane. The path may be disposed within, below, or above the plane defined by the bridge.

Abstract: Methods and systems for enabling an approximation of true snapshot integration by lowering total power requirements, total detector bias current, integrated charge per detector and detector impedance while allowing for higher ROIC input noise through the use of microbolometer photodetectors, super-pixels, and techniques for their use are herein provided.

Abstract: A radiation sensor including a plurality of pixels formed in and on a semiconductor substrate, each pixel including a microboard suspended above the substrate by thermal insulation arms, the microboard including: a conversion element for converting incident electromagnetic radiation into thermal energy; and a passive optical shutter including a heat-sensitive layer covering one of the faces of the conversion element, the heat-sensitive layer having a reflection coefficient for the radiation to be detected that increases as a function of its temperature.

Abstract: A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.

Abstract: We disclose herein an infra-red (IR) device comprising a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises a dielectric membrane which is adjacent, or directly above, or below the etched cavity portion of the substrate. The device further comprises a reflective layer on or in or above or below the dielectric membrane to enhance emission or absorption of infrared light at one or more wavelengths.

Abstract: An optoelectronic module includes first and second optical channels having respective active optoelectronic components. A transparent encapsulation is over the active optoelectronic components, and opaque encapsulation is on the transparent encapsulation. The opaque encapsulation has a first opening over a first active optoelectronic component and a second opening over a second optoelectronic component. The opaque encapsulation forms a ledge in an area of the second opening, and an optical assembly is disposed on the ledge within the second opening over the second optoelectronic component.

Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.

Abstract: Provided is a solid-state imaging device that includes: a first pixel provided with a color filter layer having a transmission band in a visible light wavelength region on a light-receiving surface of a first light-receiving element; a second pixel provided with an infrared pass filter layer having a transmission band in an infrared wavelength region on a light-receiving surface of a second light-receiving element; an infrared cut filter layer that is provided on a position overlapping with the color filter layer and transmits light in the visible light wavelength region by blocking light in the infrared wavelength region; and a cured film provided in contact with the infrared cut filter layer.

Abstract: An infrared sensor includes a supporting body having supporting body metal wiring that allows infrared rays to pass through. The supporting body is provided so as to cover one portion of an infrared detecting portion in a different plane spatially separated from that of the infrared detecting portion. The supporting body metal wiring disposed in an interior of the supporting body is such that one portion of a cobalt iron film is oxidized by a plasma discharge being carried out in an oxygen atmosphere. According to this kind of structure, infrared rays pass through the supporting body, and are absorbed by the infrared detecting portion, because of which there is no need to provide an infrared absorption layer in an upper layer of the supporting body.

Abstract: A light detector includes: a substrate; and a membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line interposed therebetween, a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, a light absorption layer, and a separation layer which is disposed between each of the first wiring layer and the second wiring layer and the light absorption layer, and in which the light absorption layer includes a first region which spreads to the side opposite to the second wiring layer with respect to the first wiring layer and a second region which spreads to the side opposite to the first wiring layer with respect to the second wiring layer.

Abstract: A current detection module capable of differentiating and quantifying contribution to a current signal generated by a sensor in response to stimulation by a certain target source from contributions from sources other than the target source (ambient sources) is disclosed. As long as the contribution from the target source comprises a pulsed signal, the module may synchronize itself to the pulse(s) so that there is a predetermined phase relationship between the pulse(s) and functions carried out by various stages of the module. The module may be re-used to also detect and quantify contributions from ambient sources by presenting these contributions to the module as pulses that trigger synchronization of the module. To that end, a detection system disclosed herein is based on the use of such current detection module and allows mode switching where, depending on the selected mode of operation, the module is configured to perform different measurements.