Abstract: A copper-doped glass formed by placing a target glass in a container, surrounding the target glass with a powder mixture comprised of SiO2 powder and Cu2S powder, wherein the SiO2 powder and the Cu2S powder are mixed according to the formula (SiO2)(1-x)(Cu2S)x, where 0.01<x<0.1, and heated to a temperature of between 800° C. and 1150° C. for a duration of between 1 and 10 hours.

Abstract: In a back contact type solar cell in which an impurity diffusion layer where second conductive type impurities are diffused is formed on a back surface, as a non-light receiving surface, of a first conductive type semiconductor substrate, and an electrode in contact with the impurity diffusion layer is provided, a surface concentration of the impurities in the impurity diffusion layer is not less than 5×1017 atms/cm3 and not more than 5×1019 atms/cm3, and a diffusion depth of the impurities in the impurity diffusion layer is not smaller than 1 ?m and not larger than 2.9 ?m from a top of the back surface. It is thereby possible to provide a high efficiency back contact type solar cell which can be manufactured by a simple method at low cost.

Abstract: The invention concerns an abutment for a tubular component, said abutment being overlaid with a coating comprising a principal layer constituted by an alloy selected from nickel-phosphorus alloys, copper-nickel alloys and nickel-tungsten alloys. The invention also concerns a tubular component comprising said abutment and a method for producing such an abutment.

Abstract: A conductive paste composition, a method for preparing the same, and an electrode formed by the conductive paste composition are disclosed. In one aspect, the conductive paste composition includes a copper-based particle and a boron-based particle of which a surface is partially or entirely coated with boron oxide. The boron-based particle is crystalline boron-based particle or amorphous boron-based particle. The boron-based particle has a content of more than 1 wt % to less than 10 wt % based on a total content of the conductive paste composition.

Abstract: The invention provides an electroconductive paste comprising metallic particles and an organic vehicle comprising an aldehyde resin and a solvent. The invention also provides an electroconductive paste comprising metallic particles comprising at least two types of metallic particles selected from the group consisting of a first metallic particle having an average particle size d50 of at least about 1 ?m and no more than about 4 ?m, a second metallic particle having a d50 of at least about 8 ?m and no more than about 11.5 ?m, and a third metallic particle having d50 of at least about 5 ?m and no more than about 8 ?m, and an organic vehicle. The invention further provides an article comprising a glass substrate comprising a transparent conductive oxide coating and a conductive electrode formed by applying aforementioned conductive paste on said glass substrate, and a method of producing such an article.

Abstract: A composition for a reinforced metal matrix coating, and a method of preparing and coating the composition. The composition includes a plurality of sacrificial metallic binder particles that is anodic with respect to a base substrate, and a plurality of hard particles.

Abstract: This invention relates to a copper thick film paste composition paste comprising copper powder, a Pb-free, Bi-free and Cd-free borosilicate glass frit, ruthenium-based powder, and an organic vehicle. The invention also provides methods of using the copper thick film paste composition to make a copper conductor on a substrate. Typical substrates are selected from the group consisting of aluminum nitride, aluminum oxide and silicon nitride.

Abstract: An object is made by sealing a metal body of the part to a nonmetal part of the object. The metal body is formed by a powdered metallurgy process, with the metal body being formed around or with the nonmetal part. Metal powder may be sintered or bonded to form the metal body around the nonmetal part, with the metal body then contracting as it sinters and cools to form the seal around the nonmetal part. The nonmetal part may be a glass or ceramic part, and may include electrical conductors passing through nonmetal part, and sealed in holes in the glass or ceramic. The object may be any of a variety of devices such as an electro-explosive device or an electronics device.

Abstract: Disclosed is a zirconium-based metal pretreatment coating composition that includes a metal chelator that chelates copper in the metal pretreatment coating composition and thereby improves adhesion of paints to a metal substrate coated with the pretreatment coating composition and the chelating agent is present in a sufficient amount to ensure that in the deposited pretreatment coating on the metal substrate the average total atomic % of copper to atomic % of zirconium is equal to or less than 1.1. The pretreatment coating composition is useful for treating a variety of metal substrates.

Abstract: A door frame for a vehicle having improved anti-corrosive performance, and a method of manufacturing the door frame may includes: a three-stage superimposed portion which has a structure in which an upper steel plate layer, an intermediate steel plate layer, and a lower steel plate layer are superimposed, and in which a sealer for anti-corrosive performance is applied between the upper steel plate layer and the intermediate steel plate layer; and a curved portion which is formed at an upper side of the intermediate steel plate layer at a first end of the three-stage superimposed portion to prevent the applied sealer from being exposed to the outside, thereby improving anti-corrosive performance, and a method of manufacturing the door frame.

Abstract: The present invention provides a method for manufacturing a front electrode of a semiconductor device. The method includes using an electrically conductive paste composed of a glass-free corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more Pb—Te based crystalline compounds having a fixed melting temperature in a range of 440° C. to 760° C. During a sintering process of the electrically conductive paste for forming an electrode, the glass-free corrosion binder is converted into a liquid for easily corroding and penetrating an antireflective insulating layer on a front side of the solar cell, so that a good ohmic contact is formed. At the same time, the electrically conductive metallic powder is wetted, and the combination of the metallic powder is promoted. As a result, a high-conductivity front electrode of a crystalline silicon solar cell is formed.

Abstract: A surface-coated sintered body includes a sintered body of cubic boron nitride (cBN) and a surface coating layer formed on a surface thereof, the sintered body of cBN containing 20 to 99.5% by volume of cBN and a binder, the surface coating layer including an adhesion layer and at least one hard coating layer, the adhesion layer being a metal layer containing at least W and being formed to cover a portion of the surface of the sintered body of cBN, the hard coating layer being formed to cover the sintered body of cBN and the adhesion layer, a ratio of cBN particles in contact with the adhesion layer to a total number of cBN particles in contact with the adhesion layer or the hard coating layer in the surface of the sintered body of cBN being 0.01 to 20%.

Abstract: A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires which may be embedded in a matrix. The conductive layer is optically transparent and flexible. It can be coated or laminated onto a variety of substrates, including flexible and rigid substrates.

Abstract: Compositions and methods for depositing elemental metal M(0) films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing a metal precursor, an excess amount of neutral labile ligands, and a supercritical solvent; exposing the metal precursor to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; reducing the metal precursor to the elemental metal M(0) by using the reducing agent and/or the thermal energy; and depositing the elemental metal M(0) film while minimizing formation of metal oxides.

Abstract: Provided is a metal coated steel sheet having a coating layer including a metal having a level of Gibbs free energy equal to that of Fe or above and an oxide thereof. Accordingly, the quality of a plated steel sheet may be improved by preventing the generation of bare spots through inhibition of the formation of Mn oxide, Si oxide, or Al oxide on the surface thereof, and simultaneously, the complexity of a manufacturing facility or an increase in manufacturing costs may be minimized. Economic benefits are thus realized.

Abstract: The present invention discloses corrosion and wear-resistant claddings comprising hard particles and an alloying addition dispersed in a nickel-based alloy matrix. The alloying addition comprises at least one of molybdenum or copper. The cladding does not include cobalt-bonded tungsten carbide particles.

Abstract: The invention relates to a method for a preliminary metallizing treatment of galvanized or zinc alloy-coated steel surfaces or joined metallic parts that at least partly have zinc surfaces, in a surface treatment encompassing several process steps. In the disclosed method, metallic coats of especially a maximum of 100 mg/m2 of molybdenum, tungsten, cobalt, nickel, lead, tin, and/or preferably iron are produced on the treated zinc surfaces. Another embodiment of the invention relates to an uncoated or subsequently coated metallic part which has been subjected to the disclosed preliminary metallizing treatment as well as the use of such a part for making bodies during the production of automobiles, building ships, in the construction industry, and for manufacturing white products.

Abstract: A solar cell includes a first electrode located over a substrate, at least one p-type semiconductor absorber layer located over the first electrode, the p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer located over the p-type semiconductor absorber layer, an insulating aluminum zinc oxide layer located over the n-type semiconductor layer, the insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm and a second electrode over the insulating aluminum layer, the second electrode being transparent and electrically conductive. The insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm, may be deposited by pulsed DC, non-pulsed DC, or AC sputtering from an aluminum doped zinc oxide having an aluminum content of 100 ppm to 5000 ppm.

Abstract: Coatings suitable for use as protective oxide-forming coatings on Nb-based substrates exposed to high temperatures and oxidative environments. The coatings contain chromium and/or molybdenum, preferably contains silicon, and optionally contains niobium, titanium, hafnium, iron, rhenium, tantalum, and/or tungsten, which in combination form multiple intermetallic phases, which in combination form one or more intermetallic phases that promote the formation of a slow-growing oxide scale. Depending on the particular coating composition, the intermetallic phases may be: a silicon-modified Cr2Nb Laves phase and optionally a chromium solid solution phase, a CrNbSi intermetallic phase, and/or an M3Si intermetallic phase where M is niobium, titanium, and/or chromium; or M5Si3, MSi2 and/or M3Si2 where M is molybdenum, niobium, titanium, chromium, hafnium, iron, rhenium, tantalum, and/or tungsten.

Abstract: Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing at least one metal precursor comprising at least one ligand, an excess amount of neutral labile ligands, a supercritical solvent, and optionally at least one source of B, C, N, Si, P, and mixtures thereof; exposing the composition to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; disassociating the at least one ligand from the metal precursor; and forming the metal film while minimizing formation of metal oxides.

Abstract: A coating system and process for protecting component surfaces exposed to sulfur-containing environments at elevated temperatures. The coating system includes a sulfidation-resistant overlay coating that is predominantly niobium or molybdenum.

Abstract: A nano-metal solution, nano-metal complex grains, and a manufacturing method of a metal film are provided. The nano-metal solution includes metal grains having an amount of 0.1˜30 wt %, metallic-organic self-decomposition molecules having an amount of 0.1˜50 wt % and having formula 1, and a solvent having an amount of 20˜99.8 wt %: wherein M represents a metal ion. The metallic-organic self-decomposition molecules and the metal grains are evenly mixed in the solvent, and the metallic-organic self-decomposition molecules are adsorbed on surfaces of the metal grains.

Abstract: The present invention relates to an electroless nickel plating solution composition, a flexible printed circuit board and a manufacturing method thereof, and more particularly, to an electroless nickel plating solution composition, a flexible printed circuit board and a manufacturing method thereof capable of simultaneously satisfying plating characteristics respectively required for a pad unit and external connection units of the flexible printed circuit board by forming a nickel plating layer having a vertical growth structure with the electroless nickel plating solution composition including a water-soluble nickel compound, a reducing agent, a complexing agent and a vertical growth inducer.

Abstract: A composition for producing a protective coat against scaling on metallic surfaces. The composition includes, as binders, hydrolysates/condensates of at least one silane or a silicone resin binder and also, further, at least one metallic filler.

Abstract: An acidic chromium-free solution for treating a metal surface containing: a vanadium cation source and/or a vanadyl cation source; an organic acid as an anion source; and at least one oxoacid as another anion source is provided. The oxoacid is selected from oxoacids of nitrogen, sulfur, phosphorus, boron, and chlorine. A metal component composed of, for example, aluminum or magnesium is brought into contact with the chromium-free solution to form a vanadium coating film of a surface of the metal component. A surface treating process using this chromium-free solution is useful for formation of a coating film having low corrosion resistance and low electric resistance.

Abstract: Embodiments of the present invention relate to coating deposition and coatings for dental and orthopedic devices that provide prevention or reduction of ion leakage and, in some situations, improved aesthetic appearances.

Abstract: The various embodiments of the present invention generally relate to the deposition of a seedlayer for a magnetic recording medium used for perpendicular magnetic recording (PMR) applications, where the seedlayer provides for grain size refinement and reduced lattice mis-fit for a subsequently deposited underlayer or granular magnetic layer, and where the seedlayer is deposited using a nickel (Ni) alloy based sputter target. The nickel (Ni) alloy can be binary (Ni—X; Ni—Y) or ternary (Ni—X—Y). In addition, the binary (Ni—X; Ni—Y) or ternary (Ni—X—Y) nickel (Ni) based alloys can be further alloyed with metal oxides, thus forming seedlayer thin films with a granular microstructure containing metallic grains, surrounded by an oxygen rich grain boundary. The nickel-based alloys (with or without metal oxides) of the various exemplary embodiments can be made by powder metallurgical technique or by melt-casting techniques, with or without thermo-mechanical working.

Abstract: An aluminizing composition includes an aluminum-based powder, an inert organic pyrolysable thickener, and a binder selected from the group consisting of colloidal silica, at least one organic resin, and combinations thereof. A method for aluminizing an internal passage of a metal substrate comprises injecting the organic- based aluminizing composition into the internal passage, heat treating the composition under conditions sufficient to remove volatile components from the composition, to cause diffusion of aluminum into surface regions of the internal passage, and to cause decomposition of at least some pyrolysable thickener particles, and burnishing excess material from the internal passage.

Abstract: A method for forming a circuit pattern includes at least a step (a) of subjecting a non-conductor to electroless copper plating to form a copper film and a step (b) of etching the copper film so as to form a circuit pattern. As a catalyst for the electroless copper plating, a silver colloidal solution is used containing as essential components at least the following: (I) silver colloidal particles; (II) one or more of ions of metal having an electric potential which can reduce silver ions to metal silver in the solution and/or ions which result from oxidation of the ion at the time of reduction of the silver ions; and (III) one or more of hydroxycarboxylate, condensed phosphate and/or amine carboxylate ions. The silver colloidal particles (I) are produced by the ion (II) of the metal having an electric potential which can reduce silver ions to metal silver. The circuit pattern may be formed on a printed wiring board.

Abstract: The invention describes a process for non-galvanic tin plating of copper and copper alloys by precipitation of tin from methanesulphonic acid and tin-containing electrolytes, containing a complexing agent. In describing a process by which a durable tin layer which can be soldered is a created, which, at the same time, prevents liberation of the base material, this invention discloses that the electrolytes have at least one foreign metal added to form a diffusion barrier in the layer.

Abstract: A single solution MOCVD precursor is provided for depositing PCMO. An MOCVD process is provided for controlling the composition of PCMO by determining the deposition rate of each metal component within the precursor solution and determining the molar ratio of the metals based on the deposition rates of each within the temperature ranges for substrate temperature and vaporizer temperature, and the composition of PCMO to be deposited. The composition of the PCMO is further controlled by adjusting the substrate temperature, the vaporizer temperature or both.

Abstract: A paste for electroless plating 1′ comprises (a) a minute catalytic powder 11 at least the surface of which is formed by a catalytic metal or a metal capable of substituting for the catalytic metal and (b) a vehicle 10 in which the catalytic powder 11 is dispersed. The paste is used to form a film. A method that plates the film by electroless plating produces a metallic structured body, a micrometallic component, and a conductor circuit, all having a uniform crystal structure unattainable by electroplating using a conductive paste.

Abstract: A method of introducing small amounts of a refractory element into a vapor deposition coating. A second material (30), containing at least two elements which are desired to be deposited as a coating on a base material, has placed over it a first material (20) substantially comprising such two elements and a refractory element. The first material (20) is adapted to permit transport of the at least two elements in the second material (30) through the first material (20) when the first (20) and second (30) material are in a molten state and in touching contact with the other so as to permit evaporation of the two elements and the refractory element from an exposed surface. Heat is supplied to the first (20) and second (30) materials to permit evaporation of the at least two elements of second material (30) and the refractory element in the first material (20), and the resulting vapors are condensed as a deposit on a base material (50).

Abstract: Provided for is a solution for use in the electroplating of tin and tin alloys comprising a basis solution comprising an acid, optionally a salt thereof, the acid selected from the group consisting of fluoboric acid, an organic sulfonic acid, a mineral acid, or a combination thereof; divalent tin ions; and an antioxidant comprising a hydroxy benzene sulfonic acid or salt thereof, in an amount effective to prevent the oxidation of divalent tin ions. Also provided for is a method for electroplating comprising electroplating a substrate using an electroplating solution comprising a hydroxy benzene sulfonic acid or salt thereof in an amount effective to decrease the oxidation of tin ions.

Abstract: A bath system for galvanic deposition of metals includes a solution containing at least one metal, especially a precious metal and/or precious metal alloy in the form of a water-soluble salt, at least one water-soluble protein material or amino acid and/or at least one water-soluble sulfonic acid, at least one water-soluble nitro-containing substance, at least one water-soluble surface-active agent and at least one vitamin. The bath system galvanostatically applies high quality layers with uniform quality. The bath system can be kept free of harmful substances such as cyanides, sulfites and hard complexing agents.

Abstract: A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.

Abstract: A metallic coating composition and vacuum metalization process for applying the coating composition on aluminum and steel substrates, for example on vehicle wheels, hub caps, bumpers and the like. The process is environmentally compatible and produces a decorative, wear-resistant chrome finish and comprises four stages: a cleaning or preparation stage, a base coat application stage, a two-step PVD stage, and a topcoat application stage. An organic epoxy, thermosetting powder base coat is applied to smooth the surface to a glass-like finish and to ensure adhesion of the metal coatings. A two part metal coating is applied via a PVD process, consisting of a Ni/Cr base and a Cr layer. A protective acrylic, thermosetting topcoat is applied to protect the metal coating layers.

Abstract: Radioactive coating solutions and sol-gels, and corresponding methods for making a substrate radioactive by the application of the radioactive coating solutions and sol-gels thereto. The radioactive coating solution comprises at least one carrier metal and a radioisotope, which may be soluble or insoluble, and may further comprise a reducing agent. The radioactive sol-gel comprises at least one metal alkoxide and a radioisotope, which may be soluble or insoluble. Methods of making a substrate radioactive by coating with radioactive coating solutions or sol-gels are also disclosed, including electrodeposition, electroless deposition, spin coating and dip coating. In a particular embodiment, the radioactive coating formed by the method is a composite coating. Radioactive substrates are also disclosed, comprising a substrate and one or more radioactive coatings, which coatings may be the same or different.

Abstract: A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the counter electrode thereby causing indium oxide film formation on the substrate is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film forming method are further provided.

Abstract: A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, wherein M=Zr or Hf and (2) a second precursor metal compound or complex including an aliphatic alcoxide ligand coordinated to a metal M, wherein M=Zr or Hf, wherein the relative proportions of the first and second precursors relative to one another are employed to controllably establish the M/Si ratio in the deposited silicate thin film. The precursor composition may contain a solvent medium, so that the composition is adapted for liquid delivery CVD, to form stable thin-film gate dielectrics for fabrication of microelectronic devices.

Abstract: Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.

Abstract: The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.