Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

Abstract: An alcoholic beverage maturing device is provided including a container and an ultrasonic energy device. The container defines an interior volume for holding an alcoholic beverage and the ultrasonic energy device is configured for subjecting the alcohol beverage within the interior volume of the container to ultrasonic energy. The ultrasonic energy device defines a range of exposure of ultrasonic energy to the interior volume of the container that is greater than 180 degrees in order to efficiently subject the alcoholic beverage contained therein to ultrasonic energy.

Abstract: An alcoholic beverage maturing device is provided including a container and an ultrasonic energy device. The container defines an interior volume for holding an alcoholic beverage and the ultrasonic energy device is configured for subjecting the alcohol beverage within the interior volume of the container to ultrasonic energy. The ultrasonic energy device defines a range of exposure of ultrasonic energy to the interior volume of the container that is greater than 180 degrees in order to efficiently subject the alcoholic beverage contained therein to ultrasonic energy.

Abstract: According to the disclosed embodiments, an advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes one or more vents enabling improved heat flow throughout the system. Also, according to one or more additional embodiments, the functionality of the crucible support is adapted to be leveraged by a crucible manipulating device. For example, the support plate may have a plurality of slots for insertion of a “lifting arm”, such that the entire support plate assembly, as well as the crucible itself while on the support assembly, may be lifted and transported as a single unit.

Abstract: An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.

Abstract: A method of forming a templated casting involves incorporating a liquid feedstock into the channels of a honeycomb substrate to form a feedstock-laden substrate, and directionally solidifying the liquid feedstock within the channels.

Abstract: The invention provides a crystallizing method and an apparatus for producing a biopolymer capable of simplifying operations for taking out a produced crystal and mounting the crystal onto a crystal structure analyzer, thereby improving efficiency in the operations as well as reducing a labor burden. A crystallizing apparatus for producing a biopolymer crystal from a solution containing a biopolymer includes a crystal-growing chip 10 made of a material allowing electromagnetic waves to permeate through the chip, and in which a circular frame 16 is formed to retain a droplet 20 of a solution containing a biopolymer and a biopolymer crystal 28 produced in the droplet.

Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

Abstract: A crystalline material sufficiently pure for use in pharmaceuticals may be made by forming a saturated solution of the material, changing the temperature of the solution so it becomes supersaturated, and subjecting the solution to irradiation by high intensity ultrasound, the frequency of the ultrasound being scanned over a range of frequencies. For example the ultrasound may be varied between 19.5 and 20.5 kHz, and this variation may be sinusoidal. Preferably the ultrasound is provided only briefly, say for less than 5 s, before allowing the solution to cool gradually without further irradiation. The ultrasound may be applied using a vessel with an array of ultrasonic transducers attached to a wall, so each transducer radiates no more than 3 W/cm2 yet the power dissipation within the vessel is between 25 and 150 W/litre. This method can reduce the metastable zone width to less than 10 K. It is applicable in particular to aspartame.

Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.

Abstract: A protein crystal growth assembly including a crystal growth cell and further including a cell body having a top side and a bottom side and a first aperture defined therethrough, the cell body having opposing first and second sides and a second aperture defined therethrough. A cell barrel is disposed within the cell body, the cell barrel defining a cavity alignable with the first aperture of the cell body, the cell barrel being rotatable within the second aperture. A reservoir is coupled to the bottom side of the cell body and a cap having a top side is disposed on the top side of the cell body.

Abstract: A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history. In the process, the power supplied to the side heater is maintained substantially constant throughout the growth of the main body and end-cone of the ingot, while power supplied to a bottom heater is gradually increased during the growth of the second half of the main body and the end-cone. The present process enables an ingot to be obtained which yields wafers having fewer light point defects in excess of about 0.2 microns, while having improved gate oxide integrity.

Abstract: A manufacturing apparatus which thermal design is easy, and which is small in size and light in weight is provided which is operated by a person in a micro-gravity environment. The manufacturing apparatus has a manufacturing unit having an operation side on which an operation is performed directly by the hand of an operator who faces the front of the facility, and a housing section for supporting the manufacturing unit slidably along the operation side and in such a manner as to be pulled out from the front of the apparatus to the outside. The manufacturing unit is housed with the operation side being vertical, and slides substantially horizontally. Also, an observation facility is disposed between two manufacturing unit housed in a constant-temperature tank so that the two facing sides of the member are observed simultaneously.

Abstract: A apparatus for manufacturing crystals through a floating zone method which includes: structure for forming a heat-melt zone so as to be held at an upper portion of a solid crystal; a barrier enclosure having an opening a lower end portion and provided in the vicinity of an upper surface of the heat-melt zone; structure for supplying a raw material granular crystal into the barrier enclosure; and structure for moving the solid crystal and the heat-melt zone forming structure relative to each other to thereby bring about crystal growth, wherein the barrier enclosure has a bottom surface being flat or inclined toward the center of the barrier enclosure, and wherein the opening is constituted by at least one hole formed in the bottom surface of the barrier enclosure.