Abstract: The present invention is a method for manufacturing an FZ silicon single crystal for a solar cell, including the steps of: pulling a CZ silicon single crystal doped with gallium by a Czochralski method; and float-zone processing a raw material rod, with the raw material rod being the CZ silicon single crystal, at 1.6 atmospheric pressure or more to manufacture the FZ silicon single crystal. As a result, it is possible to provide a method for manufacturing an FZ silicon single crystal for a solar cell that can decrease the amount of gallium dopant evaporated during the float-zone processing, thereby preventing the silicon single crystal from increasing the resistance while decreasing oxygen, which is inevitably introduced into a CZ crystal, and preventing formation of a B-O pair, which causes a problem to the characteristics of a solar cell.

Abstract: A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.

Abstract: A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt.

Abstract: A method is disclosed for producing a single crystal comprising passing a polycrystalline rod through a heating region to create a molten zone, applying a magnetic field to the molten zone, and inducing growth of a single crystal upon solidification of the molten material on a single crystal seed. The growing single crystal is rotated in a pattern alternating between clockwise and counter-clockwise rotational directions. The method is useful for producing silicon single crystals having uniform electrical characteristics. Also disclosed is an apparatus for performing said method.

Abstract: A device for manufacturing a single-crystal solid phase by solidification of a liquid phase, comprising: a crucible capable of containing the solid phase and the liquid phase, the liquid phase being in contact with the crucible and the solid phase being separated from the crucible by an interstice; and a heating mechanism for heating the liquid phase capable of creating a thermal gradient at the level of an interface between the liquid phase and the solid phase, electromagnetic field generation, distinct from the heating mechanism, for applying an electromagnetic pressure on the junction surface of the liquid phase at the level of the interface comprising at least one spiral surrounding the crucible, and placed opposite to the area in which the interface forms in operation.

Abstract: A rotationally-vibrated unidirectional solidification crystal growth system comprises a furnace, a crucible, a rotational-vibration device including a mounting holder, a motor and a vibrating apparatus. The furnace contains a high temperature portion, a thermal isolation portion and a low temperature portion. The crucible connected to the rotational-vibration device within the furnace has a seed well down to a crystal growth arena. The crystal is grown as the ambient temperature profile moving from high to low, which can be achieved through a relative movement between the furnace and the crucible. That is either the furnace or the crucible is undergoing a top-down movement. The rotational-vibration device offers the crucible the required rotation and angular vibration, with a vibrating frequency no less than 0.2 Hz.

Abstract: A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W—Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W—Ta); tungsten (W); and combinations thereof.

Abstract: A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. The crucible includes a plurality of tungsten grains and a wall thickness of at least about 1.5 times the average tungsten grain size. In particular embodiments, the crucible includes first and second layers of tungsten grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be machined from a bar, plate, or billet of powder metallurgy tungsten.

Abstract: This invention provides a hybrid Stockbarger zone-leveling melting method for seeded crystallization and the manufacture of homogenous large-sized crystals of lead magnesium niobate-lead titanate (PMN-PT) based solid solutions and related piezocrystals. The invention provides three temperature zones resulting in increased compositional homogeneity and speed of crystal growth, in a cost effective multi-crucible configuration.

Abstract: A crucible having an inner surface is not wetted by a melt which shrinks when it solidifies is provided with indentations in the walls of the crucible to support an ingot grown in it. Supporting the crystal provides a gap between the bottom of the ingot and the inner surface of the bottom of the crucible. The gap allows more uniform heat transfer from the bottom of the crucible than is provided when there is no gap; the gap provides a controllable temperature gradient between the interior and exterior of the crucible. To direct propagation of the growth of a macrocrystal the bottom of the crucible is provided with at least one set of multiple grooves in parallel relationship with each other. Preferably a second set of multiple grooves in parallel relationship with each other intersect the grooves of the first set at an angle chosen depending upon the lattice structure of the macrocrystal to be grown. A macrocrystal grown in a crucible with twin sets of angulated grooves produces single crystals.

Abstract: A crucible having an inner surface which is not wetted by a melt which shrinks when it solidifies, is provided with indentations in its walls, the indentatons located remote from its rim. The indentations are located beneath a lateral plane through the walls of the crucible, at about two-thirds (66.6%) of the vertical height of the walls, measured from the floor of the crucible, support an ingot grown in it. Supporting the crystal provides a gap between the bottom of the ingot and the inner surface of the bottom of the crucible. The gap allows more uniform heat transfer from the bottom of the crucible than is provided when there is no gap; the gap provides a controllable temperature gradient between the interior and exterior of the crucible. To direct propagation of the growth of a macrocrystal, the bottom of the crucible is provided with at least one set of multiple grooves in parallel relationship with each other.

Abstract: A crucible 40 having an inner surface 42 not wetted by a melt which shrinks when it solidifies is provided with indentations 41 in the walls of the crucible to support an ingot grown in it. Supporting the crystal provides a gap between the bottom of the ingot 44 and the inner surface of the bottom of the crucible. The gap allows more uniform heat transfer from the bottom of the crucible than is provided when there is no gap; the gap provides a controllable temperature gradient between the interior and exterior of the crucible. To direct propagation of the growth of a macrocrystal, the bottom of the crucible is provided with at least one set of multiple grooves in parallel relationship with each other. Preferably a second set of multiple grooves in parallel relationship with each other intersect the grooves of the first set at an angle chosen depending upon the lattice structure of the macrocrystal to be grown. A macrocrystal grown in a crucible with twin sets of angulated grooves produces single crystals.

Abstract: In a device for handling heavy components of a crystal puller according to the Czochralski method, a supporting beam that can be pivoted about one vertical leg of a supporting frame and vertically adjusted includes holding claws for accommodating components or auxiliary devices. Profile rails, on which a carriage can be laterally displaced, are arranged perpendicular to the supporting beam. The carriage can be connected to a receptacle for gripping and holding the crystal.

Abstract: The uniformity of solid crystals grown by pulling a seed crystal from a molten charge material in a crucible is increased by eliminating vibration by supporting a housing for the solid crystal on a vibration isolator which rests on a supporting floor. Vibration isolators may also be placed between a crucible lift and rotation mechanism and the supporting floor. The crystal pull head for pulling the seed crystal also can be isolated from the remainder of the apparatus by vibration isolators.

Abstract: A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.

Abstract: A self-clamping holder capable of holding a polysilicon rod using the weight of the polysilicon rod is disclosed. The holder includes a generally cup-shaped adapter having an open end facing downward, and at least three clamp jaws rotatably mounted on the adapter adjacent to the open end and circumferentially spaced at equal angular intervals for clamping or gripping an end of the polysilicon rod received in the adapter. The clamp jaws have arcuate cam surfaces disposed interiorly of the adapter and profiled such that a radius of curvature of the cam surfaces gradually increases as the clamp jaws turn in a downward direction of the adapter. With this construction, the polysilicon rod is firmly gripped by the clamp jaws against detachment from the holder. The clamp jaws produces a clamping force acting on the peripheral surface of the polysilicon rod and distributed uniformly in the circumferential direction of the polysilicon rod.