Abstract: Vessels such as crucibles, pans, open cups and saggars, containing a monolithic ceramic material, and a ceramic matrix composite, wherein the monolithic ceramic material is an inner part. A method for making oxide materials that can be utilized in the contact with corrosive materials and that allows for higher conversions in a given heating process.

Abstract: Provided is a fullerene thin wires-attached substrate in which fullerene thin wires are vertically aligned relative to the surface of the substrate and which is applicable to catalysts, column materials, chemical synthesis templates, field emission devices, field effect transistors, photonic crystals, etc.

Abstract: A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.

Abstract: An upper side heater 10 is configured so that a current passage width becomes larger at a heater lower part than at a heater upper part. Thus, the upper side heater 10 has a current-carrying cross-sectional area which becomes larger at the heater lower part than at the heater upper part, a resistance value becomes accordingly smaller at the heater lower part than at the heater upper part, and a heat generation amount becomes relatively smaller at the heater lower part than at the heater upper part. Meanwhile, a lower side heater 20 is configured so that the current passage width becomes larger at the heater upper part than at the heater lower part. Thus, the current-carrying cross-sectional area of the lower side heater 20 becomes larger at the heater upper part than at the heater lower part, a resistance value becomes accordingly smaller at the heater upper part than at the heater lower part, and a heat generation amount becomes relatively smaller at the heater upper part than at the heater lower part.

Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.

Abstract: A process for producing silicon comprises the steps of a reduction step [1] of depositing silicon by reacting chlorosilanes and hydrogen in a reactor under heat and discharging an exhaust gas that contains hydrogen, oligomers of silanes, and a silicon powder; a carring step [2] of carrying the exhaust gas that has been exhausted in the step [1] while keeping a temperature of the exhaust gas at not less than 105° C.; a removal step [3] of supplying the exhaust gas that has been carried in the step [2] to a filter at a temperature of not less than 105° C. and discharging the exhaust gas from the filter at a temperature of not less than 105° C. to remove the silicon powder from the exhaust gas and give a mixed gas that contains the hydrogen and the oligomers of silanes; and a separation step [4] of cooling the mixed gas that has been obtained in the step [3] to separate the hydrogen as a gas phase from the mixed gas.

Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.

Abstract: The present invention relates to an optical element for converting light of prescribed wavelength emitted from a light source into light of wavelength different from the prescribed wavelength for outputting. A first crystal part (20) and a second crystal part (21) having respective surfaces opposed to each other whose coefficients of linear expansion are different by 5 ppm or more are optically polished so that the surfaces opposed to each other include crystallographic axes. An acrylic adhesive whose glass transition point is 75° C. or lower is applied to the adhesive surface of the first crystal part (20) or the second crystal part (21) to stick the first crystal part (20) and the second crystal part (21) to each other. The adhesive is irradiated with light to cure the adhesive and form an adhesive layer (22) having a refractive index of 1.52 or lower. Then, the first crystal part and the second crystal part stuck to each other are cut into a desired size to form the optical element.

Abstract: The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.

Abstract: A method and apparatus for eliminating voids and improving crystal quality in shaped ceramic product, e.g. sapphire fiber or silicon sheet, from a melt by using a sloped die tip. The sloped die tip or array thereof comprises an outer sidewall which is sloped outwardly at an angle of 5° to 40° from the vertical.

Abstract: Devices and methods of making devices having one or more components made of single crystal shape memory alloy capable of large recoverable distortions, defined herein as “hyperelastic” SMA. Recoverable Strains are as large as 9 percent, and in special circumstances as large as 22 percent. Hyperelastic SMAs exhibit no creep or gradual change during repeated cycling because there are no crystal boundaries. Hyperelastic properties are inherent in the single crystal as formed: no cold work or special heat treatment is necessary. Alloy components are Cu—Al—X where X may be Ni, Fe, Co, Mn. Single crystals are pulled from melt as in the Stepanov method and quenched by rapid cooling to prevent selective precipitation of individual elemental components. Conventional methods of finishing are used: milling, turning, electro-discharge machining, abrasion. Fields of application include aerospace, military, automotive, medical devices, microelectronics, and consumer products.

Abstract: A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.

Abstract: The present invention relates to a method for fabricating a crystal fiber having different regions of polarization inversion, comprising the following steps: (a) providing a source material; (b) putting the source material into a fabricating apparatus; and (c) forming the crystal fiber from the source material, and applying an external electric field on the grown crystal fiber during the growth procedure of the crystal fiber so as to induce micro-swing of the crystal fiber for polarization inversion, whereby poling at the time a ferroelectric crystalline body is being formed, whereas the conventional methods are designed for poling a ferroelectric crystalline body after it has been formed.

Abstract: A method as well as an apparatus for manufacturing a tube according to the EFG-method. To manufacture tubes with a desired even wall thickness, it is proposed to draw the tube from a melt whose temperature can be controllably adjusted section by section.

Abstract: The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e., G0(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein.

Abstract: A method of filling trenches such as a DT cell with silicon is described that involves a vapor-liquid-solid (VLS) mechanism. First, a thin film of Si is grown on the trench sidewalls. Seed metal such as Au, Ni or Ni alloy is deposited on the sidewalls by an electroless plating process. A thermal treatment is then used to reflow the metal to a liquid state art the trench bottom. A Si precursor gas is applied to grow a single whisker that fills the trench. Silicon overgrowth is removed by an etch or CMP step. The method can also be applied to filling a via hole with silicide. In this case the seed metal is Ti, Co, or Ni which is reflowed by a thermal treatment. A silicon source gas like SiCl4 is combined with H2 to grow the silicide layer. This method is especially useful in forming seamless fill layers.

Abstract: The invention provides for methods that include the steps of continuous liquid phase epitaxy followed by evaporation or implantation of dopant, barrier-interconnect, and additional interconnect-dopant layers to grow cylindrical helical multi-layer structures which form long series chains of photocells when sliced, etched, and passivated. The invention also provides for uniquely formed photovoltaic devices fabricated by the method, as well as the use of such devices as infrared photovoltaic generators using radiation from a local thermal source or reservoir.

Abstract: A single crystal dome is formed from a surface of revolution and grown from a liquid material on a linear die surface wettable by the molten material. A seed crystal is supported in a position spaced from an axis of revolution which lies in the plane of the wettable surface, and the seed crystal is rotated around the axis of revolution to generate a curved surface having a predetermined radius of curvature. The seed crystal is supported in a predetermined orientation of one of its axes with respect to the wetted surface of commencement of growth.

Abstract: A high temperature heat exchanger is used with the Czochralski crystal growing method to control the heat extraction from crystal silicon ingots as they are grown. The high temperature heat exchanger also acts as a shaping die so that silicon bars, or ingots, of various shapes, including square, circular, rectangular or ribbon, can be produced by shaping during the growth stage.