Abstract: Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving melting feed rod material in a high frequency magnetic field of a first induction coil; crystallizing material of the molten zone on top of the growing single crystal; rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; and imposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.

Abstract: A method for manufacturing a monocrystalline silicon with Czochralski process, including: providing polycrystalline silicon and dopant to quartz crucible in single crystal furnace and vacuumizing, melting the polycrystalline silicon under protective gas to obtain silicon melt; after temperature of the silicon melt is stable, immersing seed crystal into the silicon melt to start seeding, lifting a shield away from surface of the silicon melt to adjust distance between the shield and the silicon melt to first preset distance; after seeding, performing shouldering to pull the crystal to increase diameter of the crystal to preset width; starting constant-diameter body growth, lowering the shield towards the surface of the silicon melt to adjust the distance to second preset distance; after growth, entering a tailing stage during which the diameter of the crystal is reduced until the crystal is separated from the silicon melt; and cooling the crystal to obtain monocrystalline silicon.

Abstract: A mono-crystalline silicon growth apparatus is provided. The mono-crystalline silicon growth apparatus includes a furnace, a support base disposed in the furnace, a crucible disposed on the support base, and a heating module. The support base and the crucible do not rotate relative to the heating module, and an axial direction is defined to be along a central axis of the crucible. The heating module is disposed at an outer periphery of the support base and includes a first heating unit, a second heating unit, and a third heating unit. The first heating unit, the second heating unit, and the third heating unit are respectively disposed at positions with different heights corresponding to the axial direction.

Abstract: A method for growing a crystal boule includes the steps of: periodically pulling upwardly a seed crystal dipped into a melt in a crucible to grow a first neck of the crystal boule below the seed crystal; and continuously pulling upwardly the seed crystal and the first neck of the crystal boule to grow a second neck of the crystal boule below the first neck.

Abstract: A crystal growing apparatus includes: a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside during heating to a higher or lower temperature than that of the other regions; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other.

Abstract: An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 m?cm or more and 1.05 m?cm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 m?m or more and less than 0.6 m?cm.

Abstract: A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base. After solidifying a liquid surface of a silicon melt in the crucible to form a crystal, the heating power of the heating module is successively reduced to appropriately adjust the temperature around the crucible to effectively control a temperature gradient of a thermal field around the crucible, so as to form a mono-crystalline silicon ingot by solidifying the silicon melt.

Abstract: An experimental method for validating a thermal history of a semiconductor ingot obtained by simulation of a crystallization process, includes a) measuring the concentration of interstitial oxygen in a portion of the semiconductor ingot; b) calculating a theoretical value of the concentration of thermal donors formed during the crystallization process, from the measurement of the concentration of interstitial oxygen and from the thermal history in the portion of the semiconductor ingot; c) measuring an experimental value of the concentration of thermal donors in the portion of the semiconductor ingot; and d) comparing the theoretical and experimental values of the concentration of thermal donors.

Abstract: An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).

Abstract: A mono-crystalline silicon growth apparatus includes a furnace, a support base, a crucible, a heating module disposed outside of the crucible, and a heat adjusting module above the crucible. The heat adjusting module includes a diversion tube, a plurality of heat preservation sheets, and a hard shaft. The diversion tube includes a tube body and a carrying body connected to the tube body. The heat preservation sheets are sleeved around the tube body and are stacked and disposed on the carrying body. The hard shaft passes through the tube body and does not rotate. The hard shaft includes a water flow channel disposed therein and a clamping portion configured to clamp a seed crystal. Therefore, a fluid injected into the water flow channel takes away the heat near the clamping portion. A heat adjusting module and a hard shaft of the mono-crystalline silicon growth apparatus are provided.

Abstract: Provided is a method for pulling up and growing, by the Czochralski method, a silicon monocrystal from a melt obtained by fusing a silicon raw material for crystals within a quartz crucible. When the inner wall of the quartz crucible is made of a synthetic quartz layer, a gel-like liquid including a devitrification accelerator, a thickening agent, and a solvent is applied to the bottom surface of the quartz crucible inner wall or to both the bottom surface and the lateral surface thereof prior to filling the silicon raw material for crystals into the quartz crucible, whereas when the inner wall of the quartz crucible is made of a natural quartz layer, the gel-like liquid is applied to both the bottom surface and the lateral surface of the inner wall of the quartz crucible prior to filling the silicon raw material for crystals into the quartz crucible.

Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

Abstract: A method for evaluating a carbon concentration where ions of a predetermined element are implanted into a silicon wafer, and then a carbon concentration is measured by a low-temperature PL method from an emission intensity of a CiCs composite, where the ions are implanted under implantation conditions of 1.1×1011×[atomic weight of the implanted element]?0.73<implantation amount (cm?2)<4.3×1011×[atomic weight of the implanted element]?0.73, and the carbon concentration is evaluated. A method for evaluating a carbon concentration makes it possible to measure with high sensitivity, a carbon concentration in a surface layer of 1 to 2 ?m, which is a photodiode region in an image sensor.

Abstract: A processing temperature TS by a rapid thermal processing furnace is 1250° C. or more and 1350° C. or less, and a cooling rate Rd from the processing temperature is in a range of 20° C./s or more and 150° C./s or less, and thermal processing is performed by adjusting the processing temperature TS and the cooling rate Rd within a range between the upper limit P=0.00207TS·Rd?2.52Rd+13.3 (Formula (A)) and the lower limit P=0.000548TS·Rd?0.605Rd?0.511 (Formula (B)) of an oxygen partial pressure P in a thermal processing atmosphere.

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

Abstract: A single crystal silicon plate-shaped body as cut out from an upper portion of a straight body portion of a CZ method single crystal silicon ingot has an interstitial oxygen concentration in a crystal is 25 ppma to 45 ppma and a substitutional carbon concentration is 0.5 ppma or less in a radial center. In the radial center, oxygen precipitates are not observed in a bulk in an image of 200,000 times by a transmission electron microscope, and after heating the single crystal silicon plate-shaped body at 950° C. for 60 minutes, oxygen precipitates are observed in an image of the 200,000 times, and a shape of the oxygen precipitates is observed in a polyhedral structure in an image of 2,000,000 times.

Abstract: A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

Abstract: A production method of a monocrystalline silicon includes: forming a shoulder of the monocrystalline silicon; and forming a straight body of the monocrystalline silicon. To form the shoulder, a crucible is heated such that a heating ratio, which is calculated by dividing a volume of heat from a lower heater by a volume of heat from an upper heater, increases from a predetermined value of 1 or more.

Abstract: A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

Abstract: A radiation image acquisition system includes a radiation source that outputs radiation toward an object, a scintillator that has an input surface to which the radiation output from the radiation source and transmitted through the object is input, converts the radiation input to the input surface into scintillation light, and is opaque to the scintillation light, an image capturing means that includes a lens portion focused on the input surface and configured to image the scintillation light output from the input surface and an image capturing unit configured to capture an image of the scintillation light imaged by the lens portion and outputs radiation image data of the object A, and an image generating unit that generates a radiation image of the object based on the radiation image data output from the image capturing means.

Abstract: A method of production of a high insulation resistance, high strength langatate-based single crystal and a langatate-based single crystal are provided. That is, a method of production of a langatate-based single crystal using the Czochralski method of pulling up a crystal from a starting material solution so as to grow a langatate-based single crystal, comprising placing the starting material solution of the single crystal in a platinum crucible and growing the single crystal using the Z-axis as the growth axis in a growth atmosphere of a mixed gas comprising an inert gas in which an oxidizing gas is contained in an amount greater than 5 vol %.

Abstract: A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.

Abstract: The invention relates to a silicon wafer having a radial variation of oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. The wafers are produced in the PV region with rotation of crystal and crucible in the same direction, and in the presence of a horizontal magnetic field of defined intensity.

Abstract: A radiation image acquisition system includes a radiation source that outputs radiation toward an object, a scintillator that has an input surface to which the radiation output from the radiation source and transmitted through the object is input, converts the radiation input to the input surface into scintillation light, and is opaque to the scintillation light, an image capturing means that includes a lens portion focused on the input surface and configured to image the scintillation light output from the input surface and an image capturing unit configured to capture an image of the scintillation light imaged by the lens portion and outputs radiation image data of the object A, and an image generating unit that generates a radiation image of the object based on the radiation image data output from the image capturing means.

Abstract: A silicon wafer includes a denuded zone which is a surface layer and of which the density of vacancy-oxygen complexes which are complexes of vacancies and oxygen is less than 1.0×1012/cm3. An intermediate layer is disposed inwardly of the denuded zone so as to be adjacent to the denuded zone. The density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction from the boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3. The intermediate layer has a depth determined corresponding to the depth of the denuded zone. A bulk layer is disposed inwardly of the intermediate layer so as to be adjacent to the intermediate layer. The density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over.

Abstract: The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished.

Abstract: An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding part arranged inside the chamber; and a pulling part for pulling a single crystal growing from the molten silicon solution, wherein the method can comprise a step of respectively growing a neck part, a shoulder part and a body part.

Abstract: A fabrication technique for cleaving a substrate in an integrated circuit is described. During this fabrication technique, a trench is defined on a back side of a substrate. For example, the trench may be defined using photoresist and/or a mask pattern on the back side of the substrate. The trench may extend from the back side to a depth less than a thickness of the substrate. Moreover, a buried-oxide layer and a semiconductor layer may be disposed on a front side of the substrate. In particular, the substrate may be included in a silicon-on-insulator technology. By applying a force proximate to the trench, the substrate may be cleaved to define a surface, such as an optical facet. This surface may have high optical quality and may extend across the substrate, the buried-oxide layer and the semiconductor layer.

Abstract: An N-type polysilicon crystal, a manufacturing method thereof, and an N-type polysilicon wafer are provided. The N-type polysilicon crystal has a slope of resistivity and a slope of defect area percentage. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to resistivity presented by a unit of Ohm·cm (?·cm), the slope of resistivity is 0 to ?1.8 at the solidified fraction of 0.25 to 0.8. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to defect area percentage (%), the slope of defect area percentage is less than 2.5 at the solidified fraction of 0.4 to 0.8.

Abstract: A method for producing a plurality of silicon single crystals using a single quartz crucible by repeating a step of heating a silicon material charged in the quartz crucible within a chamber and a step of pulling a silicon single crystal from the silicon melt in the quartz crucible includes a first melting step of melting the silicon material fed to the quartz crucible used to pull a first silicon single crystal, and a second melting step of melting an additional amount of the silicon material fed to the quartz crucible used to pull the second and subsequent silicon single crystals. The interior of the chamber is set to be a first furnace pressure during the first melting step and then set to be a second furnace pressure higher than the first furnace pressure during the second melting step.

Abstract: A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.

Abstract: A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible is rotated and raised to form a straight body of the monocrystalline silicon; a separating step in which the monocrystalline silicon is separated from the silicon melt; a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept at a level at which an upper end of the straight body is located at the same level as an upper end of a heat shield or is located below the upper end of the heat shield for a predetermined time; and a draw-out step in which the monocrystalline silicon is drawn out of a chamber.

Abstract: The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (MGP) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the MGP is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface.

Abstract: The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a Czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a load adjusting part for moving a position of the seed chuck vertically while the seed chuck is connected to the cable to change a load applied to the silicon ingot; and a controlling part for controlling the load applied to the silicon ingot by driving the load adjusting part according to the load value measured from the measuring part. Therefore, shaking of the seed during the growth process of the single crystal ingot is prevented, and thus the diameter deviation of the growing single crystal ingot may be reduced.

Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.

Abstract: Provided is a silicon single crystal ingot growing apparatus of an embodiment, including: a chamber; a crucible provided inside the chamber to accommodate silicon melt; a rotating shaft and a crucible support disposed at a lower portion of the crucible; a heater provided inside the chamber to heat the silicon melt; a pulling unit for rotating and pulling up an ingot grown from the silicon melt; and a magnetic field generating unit for applying a horizontal magnetic field to the crucible, wherein a first direction in which the rotating shaft rotates the crucible and a second direction in which the pulling unit rotates the ingot are the same.

Abstract: A manufacturing method of a monocrystal includes: a shoulder-formation step to form a shoulder of the monocrystal; and a straight-body-formation step to form a straight body of the monocrystal, in which, in the shoulder-formation step, providing that a distance from a lowermost portion inside the crucible to a top surface of the dopant-added melt is defined as H (mm) and a radius of the top surface of the dopant-added melt is defined as R (mm), the shoulder starts to be formed in a condition that a relationship of 0.4<H/R<0.78 is satisfied.

Abstract: Some embodiments relate to a silicon wafer having a disc-like silicon body. The wafer includes a central portion circumscribed by a circumferential edge region. A plurality of sampling locations, which are arranged in the circumferential edge region, have a plurality of wafer property values, respectively, which correspond to a wafer property. The plurality of wafer property values differ from one another according to a pre-determined statistical edge region profile.

Abstract: A method for producing a silicon ingot, provided with symmetrical grain boundaries, including at least steps made of: (i) providing crucible with longitudinal axis, bottom of which includes a paving formed from monocrystalline cuboid silicon seeds with a square or rectangular base and arranged contiguously, the paving, when viewed according to axis, being in shape of a grid of orthogonal directions (x) and (y) parallel to edges of seeds; and (ii) proceeding with controlled solidification of silicon by growth on seeds in a growth direction collinear to axis; wherein paving in step (i) is produced from identical silicon seeds, with two seeds contiguous in direction (x) being images of each other by turning axis (y) and two seeds contiguous in direction (y) being images of each other by turning axis (x), and misorientation 2? between crystalline arrays of two contiguous seeds being greater than 4°.

Abstract: A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterized in that the layer in step (i) of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size.

Abstract: A reverse blocking IGBT is manufactured using a silicon wafer sliced from a single crystal silicon ingot which is manufactured by a floating method using a single crystal silicon ingot manufactured by a Czochralski method as a raw material. A separation layer for ensuring a reverse blocking performance of the reverse blocking IGBT is formed by diffusing impurities implanted into the silicon wafer using a thermal diffusion process. The thermal diffusion process for forming the separation layer is performed in an inert gas atmosphere at a temperature equal to or more than 1290° C. and less than the melting point of silicon. In this way, no crystal defect occurs in the silicon wafer and it is possible to prevent the occurrence of a reverse breakdown voltage defect or a forward defect in the reverse blocking IGBT and thus improve the yield of a semiconductor element.

Abstract: A method for producing a SiC single crystal, including flowing a high-frequency current at a first frequency to an induction heating coil disposed around a graphite crucible to heat raw material Si to a predetermined temperature, thereby while melting the raw material Si, dissolving out C from said graphite crucible to form a Si—C solution, and after heating to the predetermined temperature, lowering the frequency from the first frequency to a second frequency to warm and hold the Si—C solution.

Abstract: A method for producing a single crystal includes: bringing a seed crystal into contact with a dopant-added melt, in which a red phosphorus is added to a silicon melt, such that a resistivity of the single crystal is 0.9 m?·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal; and withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees C. or more.

Abstract: A method of growing a single-crystal, silicon carbide epitaxial film on a silicon carbide substrate by chemical vapor deposition is disclosed that results in a stress value of the epitaxial film within ±7.8 MPa. For example, from the start of the growth of the epitaxial film until completion, introduction of a source gas including a gas containing silicon, a gas containing carbon, and a gas containing chlorine into a reaction chamber and performing epitaxial growth is alternately performed with suspension of the supply of the gas containing silicon and the gas containing carbon into the reaction chamber while furnace temperature is maintained as is during performing processing in a gas atmosphere containing only hydrogen, or hydrogen and hydrogen chloride, whereby the epitaxial film is grown. Employing such a method enables manufacture of a substrate having a silicon carbide epitaxial film with minimal warpage.

Abstract: The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth.

Abstract: A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.

Abstract: A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient.

Abstract: A crystal growth apparatus includes a crucible, a heating device, a thermal insulation cover, and a driving device. The crucible contains materials to be melted, wherein the heating device heats the crucible to melt the materials; the thermal insulation cover is provided upon the materials, wherein the thermal insulation cover includes a main body, which has a bottom surface facing an interior of the crucible, and a insulating member being provided at the main body; the driving device moves the thermal insulation cover towards or away from the materials, whereby, the thermal insulation cover effectively blocks heat conduction and heat convection, which prevents thermal energy from escaping out of the crucible.