Abstract: The optical fluoride crystal treatment device of the invention includes a enclosure (12) separating the device from its external environment, heating means to heat and keep the internal volume (16) of said enclosure (12) at a predetermined temperature, at least one hollow platform (20) delimiting an internal chamber (22) whose upper wall (24) bears at least two independent diffusers (30) each delimiting a cavity (32) able to receive a unitary quantity (100) of said optical fluoride crystal substance, each of said cavities (32) communicating with said internal chamber (22) of the corresponding platform (20), a gas supply source containing said reactive gas, and means (50, 52, 54) for distributing said gas containing said reactive gas from said supply source to the inside of the internal chamber of each platform and having means (44) for regulating the pressure of said distributed gas.

Abstract: The present invention provides crystals of an oligosaccharide useful, for example, as raw materials for or as intermediates of health foods, pharmaceutical compositions, cosmetics, etc. and a process for producing crystals of an oligosaccharide which is suitable for large-scale synthesis or industrialization.

Abstract: Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.

Abstract: The present invention provides a method of manufacturing a Group III nitride substrate that has less variations in in-plane carrier concentration and includes crystals grown at a high growth rate.

Abstract: A method for generating and isolating a high free energy form of a compound or a mixture of compounds comprises the steps of placing a sample in a capillary tube, solidifying the sample in the capillary tube, and isolating a high free energy form of the sample. A method for searching for a high free energy form of a sample comprises the steps of placing the compound or mixture in a capillary tube, generating a solid in the capillary tube, and determining whether a high free energy form of the sample was generated. The sample may be a compound or mixture.

Abstract: Small crystals are made by mixing a solution of a desired substance with an anti-solvent in a fluidic vortex mixer in which the residence time is less than 1 s, for example 10 ms. The liquid within the fluidic vortex mixer (12) is subjected to high intensity ultrasound from a transducer (20, 22) in or on the wall of the mixer, or coupled to a pipe supplying liquid to the mixer. The solution very rapidly becomes supersaturated, and the ultrasound can induce a very large number of nuclei for crystal growth. Small crystals, for example less than 5 &mgr;m, are formed that may be of a suitable sise for use in inhalers.

Abstract: A three dimensional photonic crystal and layer-by-layer processes of fabricating the photonic crystal. A substrate is exposed to a plurality of first microspheres made of a first material, the first material being of a type that will bond to the templated substrate and form a self-passivated layer of first microspheres to produce a first layer. The first layer is exposed to a plurality of second microspheres made of a second material, the second material being of a type that will bond to the first layer and form a self-passivated layer of second microspheres. This layering of alternating first and second microspheres can be repeated as desired to build a three dimensional photonic crystal of desired geometry. Charged polymers such as polyelectrolyte coatings can be used to create the bonds.

Abstract: A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixture in the reaction vessel, wherein the step of growing the crystal of the group III nitride is conducted while controlling an increase rate of degree of supersaturation of a group III nitride component in the melt mixture in a surface region of the melt mixture.

Abstract: A semiconductor structure integrates wide bandgap semiconductors with silicon. The semiconductor structure includes: a substrate; a SiCAlN region formed over the substrate, and an active region formed over the SiCAlN region. The substrate can comprise silicon, silicon carbide (SiC) or silicon germanium (SiGe). The active region can include a gallium nitride material region, such as GaN, AlGaN, InGaN or AlInGaN. It also can include AlN and InN region. The structure also can include a crystalline oxide interface formed between the substrate and the SiCAlN region. A preferred crystalline oxide interface is Si—Al—O—N. The active layer can be formed by known fabrication processes, including metal organic chemical vapor deposition or by atomic layer epitaxy. The crystalline oxide interface is normally formed by growing SiCAlN on Si(111) via a crystalline oxide interface, but can also be formed by metal organic chemical vapor deposition or by atomic layer epitaxy.

Abstract: A method of producing a crystalline ITO dispersed solution, which contains the steps of: (a) causing an aqueous mixed solution of an indium compound and a tin compound to react with an aqueous basic solution, thereby generating a gel; (b) removing water content from the gel by solvent-exchange, and dispersing the resultant into an organic solvent; and (c) subjecting the resultant dispersed product to heating treatment.

Abstract: The invention relates to a liquid-crystalline medium based on a mixture of polar compounds of positive dielectric anisotropy, characterised in that it comprises one or more compounds of the formula I 1

Abstract: A process reinforcing a silica glass substance, such as a silica glass crucible, is provided without intermixing an impurity. The process comprises forming a silica glass powder layer on a surface of the silica glass substance, and crystallizing said silica glass powder layer under high temperature. As for a silica glass crucible, the process for reinforcing the silica glass crucible and the reinforced silica glass crucible are provided, wherein the silica glass powder layer on the whole or a part of the surface of the crucible is formed and then, crystallized under a temperature at the melting of a silicon raw material being charged into said quartz glass crucible.

Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.

Abstract: A method is disclosed for forming an epitaxial layer on a front side of a substrate formed of a monocrystalline material, using a chemical vapor deposition system. In this method, a plurality of gettering wafers formed of a gettering material are arranged in the CVD system, such that the front side of each substrate is facing one of the gettering wafers. Impurities present in the CVD system during formation of the epitaxial layer are gettered by the gettering wafers. Alternatively, a layer of a gettering material is deposited on a back side of each of the plurality of substrates, and the substrates are arranged such that the front side of each substrate is facing the backside of another of the substrates. In another embodiment, a layer of a gettering material is deposited on an interior surface of the CVD system. Impurities removed from the CVD system during epitaxial formation include oxygen, water vapor and other oxygen-containing contaminants.

Abstract: On an upper surface of a silicon (Si) substrate, an Al0.2Ga0.8N layer having a film thickness of 0.2 &mgr;m to 0.3 &mgr;m and a GaN layer having a film thickness of 0.5 &mgr;m are formed successively. The resulting substrate is set in a halide VPE apparatus so that the resulting substrate can be independently etched with HCl gas from a rear surface of the resulting substrate. While a GaN layer is epitaxially grown on the GaN layer at 900° C. by a halide vapor-phase epitaxy method, the silicon (Si) substrate, the Al0.2Ga0.8N layer and the GaN layer are removed from the rear surface by gas etching. In this manner, the GaN layer having a film thickness of about 50 &mgr;m is obtained. While a GaN layer is epitaxially grown on the GaN layer at 1050° C. by a halide vapor-phase epitaxy method, the GaN layer is removed from the rear surface by gas etching. Finally, a substrate made of the GaN layer with a film thickness of 200 &mgr;m and free from any warp and any crack is obtained.

Abstract: The single crystal of alkaline earth metal fluoride of the invention is produced by a single crystal pulling method, has a straight barrel part diameter of not less than 17 cm, preferably has a straight barrel part length of not less than 5 cm, and has a light transmittance, as measured at a wavelength of 632.8 nm, of not less than 80%, preferably 90 to 98%. Further, the main crystal growth plane of the single crystal of the invention is the {111}plane or the {100}plane. The single crystal of alkaline earth metal fluoride of the invention has a large diameter as described above, and in spite that it is in an as-grown state, the peripheral surface is not opaque and the visible light transmittance is high. Therefore, evaluation of bubbles or inclusions in the crystal becomes feasible without performing complicated machining of the crystal, and from the single crystal, a large-sized optical material having advantageous properties such as high quality and high uniformity can be cut out.

Abstract: A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.

Abstract: A thermal annealing process for producing a low defect density single crystal silicon wafer. The process includes thermally annealing a wafer having a first axially symmetric region which extends radially inwardly from the circumferential edge, contains silicon self-interstitials as the predominant intrinsic point defect and is substantially free of agglomerated interstitial defects and a second axially symmetric region which has vacancies as the predominant intrinsic point defect. The wafer is subjected to a thermal anneal at a temperature in excess of about 1000° C. in an atmosphere of hydrogen, argon or a mixture thereof to dissolve agglomerated vacancy defects present in the second axially symmetric region within a layer extending from the front side toward the central plane.

Abstract: A method of making an oriented calcium fluoride single crystal includes loading calcium fluoride feedstock on top of a seed crystal having a specific crystallographic orientation, heating the calcium fluoride feedstock to a temperature sufficient to form a melt, and growing a calcium fluoride crystal on the seed crystal by progressively moving the melt and the seed crystal through a temperature gradient zone having an axial temperature gradient in a range from approximately 2° C./cm to approximately 8° C./cm, wherein a growth direction of the calcium fluoride crystal substantially conforms to the crystallographic orientation of the seed crystal.

Abstract: A method of making a fracture-resistant large-size calcium fluoride single crystal is described, which is suitable for an optical component for radiation in the far UV range. The calcium fluoride raw material for the single crystal is first melted and subsequently solidified by cooling the melt to form a single crystal. However the calcium fluoride raw material is doped with from 1 to 250, preferably 1 to 100, ppm of strontium, preferably added as strontium fluoride, and contains from 1 to 10 ppm of sodium as well as up to 100 ppm of other impurities.

Abstract: The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.

Abstract: To provide a method of manufacturing compound semiconductor single crystals such as silicon carbide and gallium nitride by epitaxial growth methods, that is capable of yielding compound single crystals of comparatively low planar defect density. The method of manufacturing compound single crystals in which two or more compound single crystalline layers identical to or differing from a single crystalline substrate are sequentially epitaxially grown on the surface of said substrate. At least a portion of said substrate surface has plural undulations extending in a single direction and second and subsequent epitaxial growth is conducted after the formation of plural undulations extending in a single direction in at least a portion of the surface of the compound single crystalline layer formed proximately.

Abstract: The invention provides a process for growing UV region <200 nm transmitting calcium fluoride monocrystals, which includes crystallization from the melt, the annealing of the crystals and subsequent cooling, in a vacuum furnace, and which is effected by the continuous transfer of the crucible containing the melt from the crystallization zone into the annealing zone, each of these two zones having its own independent control system for the process parameters, characterized in that there is a temperature drop of 250-450° C. from the crystallization zone to the annealing zone, with a gradient of 8-12° C./cm, the crucible containing the material to be crystallized is moved from the crystallization zone to the annealing zone at a speed of 1-3 mm/hour, it is first kept in the annealing zone at a holding temperature of 1100-1300° C. for 20-40 hours and is then cooled first to 950-900° C. at a rate of 2-40° C./hour and then to 300° C. at a rage of 5-8° C.

Abstract: The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitaxial layer 12 made of GaN.

Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.

Abstract: A single crystal ceramic material for optical and optoelectronic applications is d, including a single crystal spinel having a general formula aAD·bE2D3, wherein A is selected from the group consisting of Mg, Ca, Zn, Mn, Ba, Sr, Cd, Fe, and combinations thereof, E is selected from the group consisting Al, In, Cr, Sc, Lu, Fe, and combinations thereof, and D is selected from the group consisting O, S, Se, and combinations thereof.

Abstract: A nonlinear crystal has increased spectral acceptance. The nonlinear crystal includes a plurality of domains. The domains are arranged serially across the nonlinear crystal. The domains have alternating polarity. The poling periods of the domains are varied across the nonlinear crystal so as to provide nonuniform chirping of phase matching of focused optical signals propagated through the nonlinear crystal.

Abstract: A method of growing single crystal Gallium Nitride on silicon substrate is disclosed including: removing oxide layer of silicon substrate, growing buffer layer of Silicon Carbon Nitride (SiCN), and growing single crystalline Gallium Nitride thin film, characterized in that a buffer layer of SiCN is grown to avoid lattice mismatch which appears when Gallium Nitride is grown directly on silicon substrate, and that Rapid Thermal Chemical Vapor Deposition is adopted to grow SiCN buffer layer, and that Metalorganic Chemical Vapor Deposition is adopted to grow single crystalline GaN thin film.

Abstract: Process for crystallizing 2-acetylthio-3-phenylpropionic acid from a solution of acetylthiophenylpropionic acid, wherein, at a temperature lower than 50° C., an antisolvent is added to form a mixture of antisolvent and acetylthiophenylpropionic acid solution; wherein seed crystals are added to the mixture before crystallisation occurs; and wherein the antisolvent is dosed over time during the occurrence of crystallisation.

Abstract: A process for growing by chemical vapor deposition a heteroepitaxial single crystal diamond is disclosed. The process provides a substrate which enables the growth of single crystal diamond which is vapor coated on an iridium film. An intermediate process for producing a composite composition with diamond nuclei is also described. Further described are composite compositions of metal oxide, iridium and single crystal diamond films or diamond nuclei. Single crystal diamond is useful in a variety of electronics and acoustics fields.

Abstract: A non-linear optical crystal of a compound having the general formula DxM1-xTOZO4, including isomorphs thereof, where: D is a dopant which comprises one or both of Rb and Cs; M is selected from one or both of K and Ag; T comprises one or more of Ti, Sn and Ge, optionally together with one or both of Nb and Ta; Z is selected from one or both of P and As, optionally together with one or both of Ge and Si; and 0<x≦0.1.

Abstract: The potassium ytterbium double wolframate single crystal, of formula [KYb(WO4)2], optionally doped with one or more ions of the rare earth elements, shows a crystallographic structure belonging to the monoclinic system, spatial group C2/c and is useful as material for visible spectrum emitting solid state lasers, in particular, for green and blue emission, pumped by infrared radiation diodes.

Abstract: The present invention relates to a process for the treatment of a Czochralski single crystal silicon wafer having at least a portion of which is vacancy dominated to dissolve existing oxygen clusters and precipitates, while preventing their formation upon a subsequent oxygen precipitation heat treatment. The process comprises (i) heat-treating the wafer in a rapid thermal annealer at a temperature of at least 1150° C. in an atmosphere having an oxygen concentration of at least 1000 ppma, or alternatively (ii) heat-treating the wafer in a rapid thermal annealer at a temperature of at least about 1150° C. and then controlling the rate of cooling from the maximum temperature achieved during the heat-treatment through a temperature range in which vacancies are relatively mobile in order to reduce the number density of vacancies in the single crystal silicon to a value such that oxygen precipitates will not form if the wafer is subsequently subjected to an oxygen precipitation heat-treatment.

Abstract: An efficient device for capturing fast moving particles has an adhesive particle shield that includes (i) a mounting panel and (ii) a film that is attached to the mounting panel wherein the outer surface of the film has an adhesive coating disposed thereon to capture particles contacting the outer surface. The shield can be employed to maintain a substantially particle free environment such as in photolithographic systems having critical surfaces, such as wafers, masks, and optics and in the tools used to make these components, that are sensitive to particle contamination. The shield can be portable to be positioned in hard-to-reach areas of a photolithography machine. The adhesive particle shield can incorporate cooling means to attract particles via the thermophoresis effect.

Abstract: During an inventive laser ablation ICP-MS analysis method, solid matter samples (39) are examined in a frozen initial state. To this end, the sample chamber (2) as well as the carrier gas stream (12), which transports the ablated sample particles into the plasma (ICP-MS), are cooled to low temperatures (Tk). The physical conservation, especially of ice samples (3), results in obtaining a particularly high local resolution since their annual layers often remain preserved. An advantageous device (1) is provided with an insulated chamber (2) that can be cooled and with a simple circulating cooling device (17). The laser ablation analysis method can be used for all freezable sample materials used in mass spectrometry.

Abstract: In order to shorten the annealing time to thereby reduce the production cost of a fluoride crystal, the method of heat treating a fluoride crystal of the present invention comprises the steps of: raising the temperature of a fluoride crystal; reducing the raised temperature of the fluoride crystal at a first temperature reducing rate; and then reducing the temperature of the fluoride crystal at a second temperature reducing rate which is larger than the first temperature reducing rate.

Abstract: &bgr;-ZrNCl polycrystalline powder prepared by chemical transport method and NH4Cl are mixed in a molar ratio of 1:2. The mixture is encapsulated in a Au capsule (6 mm in inner diameter and 6 mm in depth) of a reaction vessel 2, which is then enclosed in a highly heat-conductivitive sodium chloride block as an electrically insulating pressure medium 6. The mixture held in the sodium chloride block is placed in a carbon tube 8 for serving as a heater. In a cubic-pressing apparatus using a pyrophyllite 12 as a pressure-transmitting medium, the mixture is heated at 900° C. for 2 hours under an applied pressure of 3 GPa. After the mixture is allowed to stand until it is cooled down to room temperature, the Au capsule is taken out and light green &bgr;-ZrNCl single crystals are obtained. A large single crystal among them had a hexagonal plate-like habit and is transparent with dimensions about 2 mm in diameter, and 0.3 mm in thickness.

Abstract: Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof or amine group containing acid.

Abstract: Disclosed is a method of fabricating a photonic crystal fiber preform using an extrusion die, comprising the step of extruding a first optical material into a continuous phase, and a second optical material into a plurality of dispersed phases to axially orient the dispersed phases.

Abstract: The invention provides a scatter-free below 200 nm wavelength transmitting optical fluoride lithography crystal for use with below 200 nm laser light. The invention includes making below 200 nm wavelength transmitting optical fluoride lithography crystals with a calcium fluoride feedstock in a low-chlorine graphite optical fluoride crystal crucible having a chlorine content concentration less than 0.3 ppm Cl by weight. The method includes melting calcium fluoride feedstock in the <0.3 ppm Cl graphite crucible to form a low-chlorine calcium fluoride crystal from the melt in the crucible to provide a grown calcium fluoride scatter-free crystal having a chlorine concentration less than 0.25 Cl by weight.

Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Abstract: A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical device is fabricated by forming the Ru-doped semi-insulating semiconductor layer on a Fe-doped semi-insulating InP substrate, and forming a semiconductor crystal layer to which a p-type impurity is doped.

Abstract: The present invention relates to the use of phase equilibria as shown in the phase diagram of Cu—In—Se for the preparation of solid compositions. Further, a new method for directly obtaining &agr; CulnSe2 from a liquid phase, preferably as a single phase composition and novel single phase &agr; CulnSe2 compositions are provided.

Abstract: The present invention relates to a process for growing a single crystal silicon ingot which contains an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process comprises (i) forming a region within the constant diameter portion in which vacancies are the predominant intrinsic point defect; (ii) heating the lateral surface of the ingot to cause a thermally induced inward flux of silicon self interstitial atoms into the region from the heated surface which reduces the concentration of vacancies in the region; and (iii) maintaining the temperature of the region in excess of the temperature, TA, at which agglomeration of vacancy point defects into agglomerated defects occurs during the period of time between the formation of the region and the reduction of the concentration of vacancies in the region.

Abstract: The invention relates to a tetragonal single crystal (1, 11) of composition:

Abstract: There is provided a method of producing a bonded SOI wafer wherein a silicon single crystal ingot is grown according to Czochralski method, the single crystal ingot is then sliced to produce a silicon single crystal wafer, the silicon single crystal wafer is subjected to heat treatment in a non-oxidizing atmosphere at a temperature of 1100° C. to 1300° C. for one minute or more and continuously to a heat treatment in an oxidizing atmosphere at a temperature of 700° C. to 1300° C. for one minute or more without cooling the wafer to a temperature less than 700° C. to provide a silicon single crystal wafer wherein a silicon oxide film is formed on the surface, and the resultant wafer is used as the bond wafer, and a bonded SOI wafer produced by the method. There can be provided a SOI wafer that has a SOI layer having few crystal defects, good surface roughness and high quality in high productivity, in high yield and with low cost.

Abstract: A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controlling the secondary recrystallization texture by either using thermal gradients and/or seeding. The seed is selected to shave a stable texture below a predetermined temperature. The sharply biaxially textured substrate can be formed as a tape having a length of 1 km, or more. Epitaxial articles can be formed from the tapes to include an epitaxial electromagnetically active layer. The electromagnetically active layer can be a superconducting layer.

Abstract: In a method of growing a ZnO-containing compound semiconductor single crystal, on a compound single crystal layer of a hexagonal crystal structure having a plurality of (0001) surfaces aligned in a sequence of terraces along a direction of a-axis, a ZnO-containing compound single crystal of a hexagonal crystal structure is grown, having an inclination from the c-axis toward the direction of the a-axis.

Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.