Abstract: An object of the invention is to provide a single crystal clamping device and a single crystal supporting method. The single crystal clamping device does not become inclined and does not vibrate, and the center of the single crystal clamping device is congruous to the center of the growing single crystal.

Abstract: A method and apparatus for hydrothermally growing crystals in a pressure vessel containing feed crystals immersed in a mineralizing solution. The apparatus is disposed in the pressure vessel, above the mineralizing solution. The apparatus includes an enclosure having opposing major walls with passages extending therethrough. The enclosure completely surrounds a seed plate having opposing major faces. A restraining structure holds the seed plate within the enclosure such that the major faces of the seed plate are spaced inwardly from the major walls.

Abstract: The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. According to the present invention, a constricted portion is formed under a seed crystal, and a single crystal is pulled up by supporting the constricted portion, and a support base 30 is used, which has an opening 22, serving as a through-hole, and a slit 34, which leads from the opening to outer periphery of the support base, and a portion with larger diameter of the constricted portion is supported from below in linear contact manner. The support base 30 further comprises a recess 32, which leads to the opening 22, and it can be designed and selected to have such configuration as to suit the shape of the constricted portion. The support base 30 can be moved between a non-support position and a support position by operating a moving unit.

Abstract: A clamping portion 2 is suspended by wire cables 5. A linkage 3 connects the clamping portion 2 and a contacting portion 4 disposed below the clamping portion 2. One end of a circular-arc member 1 is pivotally supported by a swivel axis 33. The circular-arc member 1 is swiveled by guiding the contacting portion 4 to contact with the shoulder 63 of the crystal body 6.

Abstract: There is disclosed a method of manufacturing a silicon monocrystal in accordance with the Czochralski method in which a seed crystal is brought into contact with silicon melt and is then slowly pulled while being rotated in order to grow a silicon monocrystalline ingot below the seed crystal. In the method, there is used a seed crystal whose a tip end to be brought into contact with the silicon melt has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is then lowered at a low speed in order to melt the tip end portion of the seed crystal until the thickness of the tip portion increases to a desired value. Subsequently, the seed crystal is pulled slowly in order to grow a silicon monocrystalline ingot having a desired diameter without performance of a necking operation. During the growth of the silicon monocrystalline ingot, a part of the crystal is mechanically held.

Abstract: A single crystal pulling method includes the steps of: immersing seed crystal in a melt; growing single crystal around the seed crystal and reducing its diameter to remove dislocation in the single crystal; prior to forming a straight waist product portion of single crystal having a prescribed diameter, forming a straight waist holding portion having a diameter smaller than the prescribed diameter; holding the straight waist holding portion by using a single crystal holding device; and pulling the straight waist product portion while the straight waist holding portion is held. Preferably the step of forming the straight waist holding portion includes a step of varying a pulling speed to make unevenness in the surface thereof.

Abstract: The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. The semiconductor manufacturing apparatus of the invention comprises a seed crystal lift mechanism for holding a seed crystal and for moving it up and down, and a single crystal gripping mechanism for gripping a constricted portion of a single crystal formed, whereby the apparatus comprises an accommodation container 10a for accommodating at least a driving unit 14 of the seed crystal lift mechanism and at least a driving unit 15 of the single crystal gripping mechanism, and further accommodation container lift mechanisms 3 and 4 for moving the accommodation container up and down. The accommodation container may be designed in heat-insulating structure, or a cooling means for cooling inside the accommodation container may be further provided.

Abstract: The object of the present invention is to prevent the single crystal during pulling operation from turning to polycrystal when the single crystal under pulling operation is gripped by a gripper and to achieve the gripping automatically. When a wire 1 is moved down to immerse a seed crystal 3 into surface of a Si melt 11 in a quartz crucible 10, arms 12 and 13 wait at such positions that tips do not come into contact with the Si melt 11, and tips of the gripping arm 12 are opened so that the tips are not brought into contact with a portion with larger diameter 5 during pulling operation. By pulling up the wire 1, a neck portion 4, a portion with larger diameter 5, a constricted portion 6, and a crystal main portion 7 are formed under the seed crystal 3. When a sensor 14 detects that upper surface of the portion with larger diameter 5 has come into contact with the tips of the contact/detecting arm 13 during pulling operation, tips of the gripping arm 12 are closed and grip the constricted portion 6.

Abstract: A crystal growing apparatus is able to provide dopant to a melt in the apparatus. A hopper is carrying dopant is integrated into a pull shaft of the apparatus so that dopant can be added to the melt without providing additional orifices in the apparatus or by opening the interior of the apparatus to the atmosphere.

Abstract: When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.

Abstract: In a device for handling heavy components of a crystal puller according to the Czochralski method, a supporting beam that can be pivoted about one vertical leg of a supporting frame and vertically adjusted includes holding claws for accommodating components or auxiliary devices. Profile rails, on which a carriage can be laterally displaced, are arranged perpendicular to the supporting beam. The carriage can be connected to a receptacle for gripping and holding the crystal.

Abstract: A method and an apparatus for pulling a single crystal are disclosed. A neck portion, a corrugated portion, and a single crystal are formed below a seed crystal held by a seed chuck. When the corrugated portion is raised to a predetermined position (where lifting jig can hold the corrugated portion) by the seed chuck, the rising speed Va of the seed chuck is reduced, and a slider that supports a seed chuck lifting mechanism is raised at a speed Vb in order to maintain a constant pulling speed of the single crystal. Eventually, the pulling by the seed chuck is switched to the pulling by the slider. Subsequently, the lifting jig provided on the slider is raised slightly by a moving mechanism so that the crystal holding portions of the lifting jig are brought into contact with the corrugated portion and 1-50% of the weight of the crystal is shifted to the lifting jig. This enables safe and accurate growth of a heavy single crystal in accordance with, for example, the CZ method.

Abstract: This invention provides a apparatus and a method of pulling up single crystals, which respond to the weight increase of semiconductor single crystal produced by the CZ method. The retaining wire wind-up mechanisms 11, 12; multiple pairs of guide pipes 4a, 4c capable of being moved upward or downward with respect to the seed holder 1; and a plurality of retaining wires 13, 15, each retaining wire passing through one pair of the guide pipes and having its central portion to be bent into a "U" shape are provided in the central portion of the lifting wire 5. The single crystal 17 can be retained by the retaining wire 13, 15, if the guide pipes 4a, 4c are driven to move downward and the "U" shaped portions of the retaining wires 13, 15 are driven to engage with the necked portion 17b so as to lift single crystal 17. The load is determined based on the detected value coming from the weight sensors installed on the means for winding up the retaining wires.

Abstract: A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.

Abstract: A crystal-clamping fixture 30 is suspended by a pulling up mechanism 1 through the use of wires. The crystal-clamping fixture 30 includes a box 31 and a plurality of holding rods 32. The box 31 has two openings formed on its top and bottom sides. The reduced portion 2a, the enlarged portion 2b and the necked portion 2c formed beneath the seed crystal 5 are allowed to penetrate through the two openings during the pulling up operation. A plurality of "S" shaped slots 31a, 31b are formed on the lateral sides of the box 31. The holding rods 32 capable of rotating along the path of the "S" shaped slots 31a, 31b are horizontally disposed within the box 31 by inserting their two end portions through the "S" shaped slots 31a, 31b. The holding rods kept restrained at the upper ends of the "S" shaped slots are pushed out by the conic surface formed at the upper part of the enlarged portion 2b and rotate and descend to reach the lower ends of the "S" shaped slots.

Abstract: This invention provides a apparatus for pulling up crystal bodies, which is capable of firmly clamping and safely pulling up large-diameter crystal bodies regardless of the location of the necked portions formed on the top of the crystal bodies. A large-diameter portion 52 and a necked portion 51 are formed on the top of the crystal body 5. The swaying members 12 of the necked-portion clamp 1 are capable of swaying upward and downward without restraint. The stopper 14 restrains the swaying members 12 to sway below the horizontal plane on which the swaying members 12a are located. The large-diameter portion 52 can pass through the clamp body 11 by lowering the necked-portion clamp 1 to sway the swaying members 12 upward. The swaying members 12 close to clamp the necked portion 51 when the necked-portion clamp 1 reaches a location near the necked portion 51. The distance between the necked-portion clamp 1 and the seed-crystal 3 is adjustable.

Abstract: An apparatus for pulling a monocrystalline ingot from a semiconductor source material located within a growth chamber as the ingot is grown on a seed crystal according to the Czochralski method. The apparatus comprises a drum, a chuck constructed for holding the seed crystal and the ingot, and a cable having a first end connected to the drum, a second end connected to the chuck and a portion wound around the drum. The portion of the cable wound around the drum exerts a normal force on a circumferential surface of the drum corresponding to the tension in the cable. The drum and cable interact to produce a friction force resisting sliding movement of the cable relative to the drum in a direction lengthwise of the cable. The drum is capable of unwinding cable from the drum thereby to let out the cable and lower the chuck, and capable of winding the cable around the drum thereby to reel in the cable and draw the chuck upwardly.

Abstract: A single crystal ingot (10) is grown by first inserting a single crystal seed (14) into a melt (11) and pulling the seed (14) at a high pulling rate to grow a single crystal neck (15). The pulling rate is then altered to grow an overhang (18) with a diameter greater than that of the single crystal neck (15). An elongated body (19) is formed below the overhang (18) by adjusting the pulling rate. A multi-arm fixture (30) grabs the overhang (18) to alleviate the tensile and torsional stresses in the single crystal neck (15) that may be caused by the weight and the rotational motion of the single crystal ingot (10).

Abstract: In a lifting unit for a device for pulling monocrystals, a frame that extends in the horizontal direction and surrounds a pulling shaft and/or a crystal is provided with at least two bearings as well as two-armed grippers that are held in the aforementioned bearings and can be pivoted in vertical planes. The respective gripping arms are aligned with the rotational axis of the frame and have such a length that the end surfaces of the gripping arms which face one another tightly adjoin one another in the closed position and only allow a limited pivoting movement. The respective free ends of the two-armed grippers are coupled to tie rods that approximately extend in the vertical direction. The upper ends of the tie rods are connected in articulated fashion via a horizontally extending crossbeam, where the crossbeam with a spindle nut can be adjusted along the pulling shaft via a threaded spindle. The frame is suspended on cables that serve for pivoting the gripping arms.

Abstract: In a conventional method for pulling a single crystal, in order to exclude the dislocation induced in contact of a seed crystal with a melt, a neck having a small diameter has been formed. But when a heavy single crystal having a large diameter of 12 inches or so is pulled, it is impossible to hold the single crystal, leading to the falling. When the diameter of the neck is made larger in order to prevent the falling, the dislocation cannot be excluded, leading to the propagation of the dislocation to the single crystal. In the present invention, using a seed crystal having a cylindrical body and a conical front portion, the induction of the dislocation is inhibited by making the temperature of the front portion almost the same as the temperature of the melt when the front portion of the seed crystal is brought into contact with the melt and a single crystal is pulled without forming a neck after melting part of the front portion into the melt.

Abstract: In this invention, three equally spaced and "L" shaped hooks 6B are rotatably supported on the upper peripheral wall of the body 6A of the seed holder 6 at pivots 6E. A radiation screen 7 is hung at the front ends of the hooks 6B via three engaging fixtures 6C affixed on its upper rim. The radiation screen 7 shaped like a hollow trancated cone, is used to surround the lower end of the single-crystal being lifted from the quartz crucible 3 which is disposed within the main chamber 1. According to the apparatus for manufacturing a single-crystal which can perform the descending or ascending movements of the radiation screen, the setting operation, and the lifting operation consecutively and automatically. Therefor the apparatus can enhance the productivity and avoid any problems with process automation, furthermore, it is compatible with conventional equipment.

Abstract: There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):W<12.5.times..pi.D.sup.2 /4 (1)where D designates the minimum diameter (mm) of a neck. This makes it possible to pull a heavy monocrystal safely and reliably.

Abstract: In a method of manufacturing a silicon monocrystal using the Czochralski method, there is used a seed crystal whose tip end has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is then lowered at a low speed in order to melt the tip end portion of the seed crystal until the size of the tip portion increases to a desired value. Subsequently, the seed crystal is slowly pulled upwardly in order to grow a silicon monocrystalline ingot having a desired diameter without performing necking operation. This method enables a heavy silicon monocrystal to be pulled quite simply without performance of necking operation, while eliminating the necessity of using a complicated apparatus such as a crystal holding mechanism.

Abstract: In a crystal holding apparatus, a corrugated portion between a seed crystal and a straight cylindrical portion of a crystal is held by a lifting jig during a single-crystal growing process wherein the seed crystal is brought into contact with a material melt and is subsequently pulled while being rotated. The tip end portion of the lifting jig includes a swinging portion having a short stroke which swings to hold or release the corrugated portion. A lock mechanism is also provided in order to swing the swinging portion for opening/closing operation and to lock the swinging portion. Accordingly, it is possible to reliably hold the corrugated portion of a crystal while the crystal is pulled in accordance with the CZ method, for example.

Abstract: In an apparatus for the production of single crystals (103) by the Czochralski melt drawing method, a gripping device (125a, 125b) is provided, by means of which the crystal (103) is held during the growing process by a pressure which is exerted radially on its lateral surface and which exceeds the frictional resistance, as a result of which the weight of the growing crystal is completely supported. The gripping device (125a, 125b) has at least two holding devices (128a, 128b) arranged opposite each other, which, during the crystal growth phase, initially move parallel to the crystal and then, after a certain desired crystal diameter has been reached, are laid against the crystal by means of the holding devices (128a, 128b) in such a way that the growth the crystal in the area of the melting zone is not disturbed.

Abstract: A low-cost and high productivity charging material is provided for use in the recharge or additional charge fabrication of single-crystal semiconductor by means of the CZ method. Common polysilicon rods utilized in recharge or additional charge fabrication have their end portions formed into ring grooves. A joint element is made of silicon. When the end portions of the rods contact, the joint element engages the grooves to connect the rods together along their longitudinal direction. The rods can have arbitrary length, whereas the total weight, including the joint element, must be adjusted by the length to be greater than those of the melted polysilicon and the suspending portions.

Abstract: A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.

Abstract: A crystal pulling apparatus is disclosed in which a single crystal ingot is pulled from a melt of a crystalline material by using a cable. A crimp portion and a spherical portion supported by the crimp portion are provided in the vicinity of the tip of the cable. Two divided couplings are screwed into a chuck body of a seed chuck. The couplings have an accommodation space therein so as to accommodate the cable and the spherical portion, and conical hole sections serving as the shoulder portion of the accommodation space contact and hold the spherical portion. This structure allows the cable to rotate during crystal pulling operation and facilitates attachment of the seed chuck to the cable and removal of the seed chuck from the cable.

Abstract: A dopant (76), such as antimony, is cast around a seed crystal (10) to form a seed-dopant assembly (14) that facilitates doping of a molten semiconductor (36), such as silicon, in a crystal-growing furnace (34). To grow a doped ingot, the seed-dopant assembly is held in a relatively cool part of the furnace while the semiconductor is melted. When the semiconductor melt is ready for doping, the seed-dopant assembly is lowered to a position just above the melt. Heat transferred to the seed dopant assembly from the melt causes the dopant to drop off the seed into the molten semiconductor without splashing and without immersing the seed.