Organic Patents (Class 117/919)
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Patent number: 6579564Abstract: A polarized organic photonics device, including an LED or photovoltaic device, is comprised of a first conductive layer or electrode coated with a friction transferred alignment material, a photoactive material, and a second electrically conductive layer or electrode. The alignment material provides for the orientation of the subsequently deposited photoactive material such that the photoactive material interacts with or emits light preferentially along a selected polarization axis. Additional layers and sublayers optimize and tune the optical and electronic responses of the device.Type: GrantFiled: October 8, 2002Date of Patent: June 17, 2003Assignee: Lucent Technologies Inc.Inventors: Xiaochun Linda Chen, Zhenan Bao
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Patent number: 6174365Abstract: Provided are an apparatus and a method which can accelerate crystallization of a biological macromolecule such as protein. A plurality of solution storage parts are formed on a silicon substrate whose valence electrons are controlled by controlling the concentration and/or the type of impurity. These solution storage parts are connected with each other by passages. The storage part is made to hold a buffer solution containing molecules of protein or the like to be crystallized. The storage parts are also made to hold solutions capable of accelerating crystallization of protein or the like respectively. These solutions are shifted to the solution storage part through the passages for preparing a mixed solution in a different ratio in each storage part. Thus, different conditions for crystallization can be simultaneously formed in a short time with a small amount of sample. A crystal of protein or the like is grown in the storage part holding the mixed solution.Type: GrantFiled: January 6, 1999Date of Patent: January 16, 2001Assignee: Sumitomo Metal Industries, Ltd.Inventor: Akira Sanjoh
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Patent number: 5997637Abstract: A method of producing a semiconducting material comprises reacting one or more of halogenosilanes with an alkali metal and/or an alkaline earth metal in an inert solvent to give a condensate and thermally decomposing the condensate. The condensate is dissolved in a suitable solvent such as toluene and tetrahydrofuran and applied by casting to a suitable substrate. The resulting semiconductor material in its film form has an optical band-gap (EO) of usually 0.1-4.0 eV.Type: GrantFiled: April 12, 1996Date of Patent: December 7, 1999Assignee: Nippon Oil Co., Ltd.Inventors: Keizo Ikai, Masaki Minami, Mitsuo Matsuno
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Patent number: 5772755Abstract: Oriented materials are described in which particular crystalline materials are grown on a highly-oriented polytetrafluoroethylene substrate. Compositions are provided comprising a layer of aligned molecular chains of oriented polytetrafluoroethylene and an overlayer of a second polymer that imparts desired properties to the construction. A third layer of crystallizable, orientable material is then deposited on the overlayer. The third layer becomes oriented. The materials are useful as polarizers when the third layer is a polarizing dye.Type: GrantFiled: August 1, 1996Date of Patent: June 30, 1998Assignee: W. L. Gore & Associates, Inc.Inventors: Jack Hegenbarth, Diane R. Carpenter
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Patent number: 5610095Abstract: A fabrication technique for improved dielectric isolation of adjacent, electronic devices or electrically controllable optical devices provides an inter-device resistance in excess of 1 M.OMEGA.. Strips of a silicon oxide material, such as SiO.sub.2, are formed between the devices after device formation but prior to regrowth of an electrically conductive cap layer and subsequent metallization. The presence of the SiO.sub.2 strips prevents regrowth of the cap layer between the adjacent devices.Type: GrantFiled: August 31, 1994Date of Patent: March 11, 1997Assignee: Lucent Technologies Inc.Inventor: Martin Zirngibl
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Patent number: 5400738Abstract: A single crystal diamond film having good crystallinity and electrical and optical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas, a carbon containing compound and an oxygen-containing compound and growing a single crystal diamond film on a substrate in a vapor phase.Type: GrantFiled: December 8, 1992Date of Patent: March 28, 1995Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hiromu Shiomi, Takahiro Imai, Naoji Fujimori
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Patent number: 5385116Abstract: A method for producing a crystal film of an organic compound from a molten liquid or solution of the organic compound on a substrate or between a pair of substrates, the substrate or at least one of the pair of substrates having on a part of the surface thereof a three-dimensional geometrical structure capable of controlling the direction of the crystal growth of the organic compound, and the other part of the surface thereof than the part having a three-dimensional geometrical structure being smooth. The resulting crystal film comprises a sufficiently large single crystal for application to a practical element with its orientation controlled in an arbitrarily selected direction.Type: GrantFiled: March 23, 1993Date of Patent: January 31, 1995Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yasuhiro Hattori, Akira Mizoguchi, Michiru Kubata
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Patent number: 5377616Abstract: A method for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber which comprises the steps of heating an organometal compound to a predetermined temperature to obtain vapor of the compound at a predetermined vapor pressure and supplying, in a constant flow rate, the vapor to the surface of a substrate heated under a reduced pressure: an apparatus for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber 11 comprising a first gas flow path for the vapor of the organometal compound which connects a container 20, in which the organometal compound is charged, to a crystal growth chamber heated under a reduced pressure through a first valve 21, a first massflow controller 22 and a second valve 23 in this order; and a constant temperature oven 24 and 25 for controlling the temperature of the container 20 and the first gas flow path extending from the container 20 to the second valve 23, are herein disclosed.Type: GrantFiled: November 9, 1993Date of Patent: January 3, 1995Assignees: Stec, Inc., Shin-Etsu Chemical Co., Ltd.Inventors: Hiroshi Mihira, Tetsuo Shimizu, Kazuhiro Hirahara, Toshinobu Ishihara, Seiki Takaya