Abstract: Methods for manufacturing an electronic device are provided. A representative method includes providing a substrate. The substrate has an active layer, a first patterned metal layer passing through a passivation layer to electrically connected to the active layer, a second patterned metal layer passing through an insulating layer to electrically connected to the first patterned metal layer, and a metal layer under the second patterned metal layer. A part of the metal layer does not serve as a portion of a thin film transistor, and the part of the metal layer serves as a portion of a gate line. The method includes providing a carrier substrate supporting a plurality of elements, conducting a testing to the elements, transferring the elements from the carrier substrate to the second patterned metal layer of the substrate, and fixing the elements to the substrate.

Abstract: Methods for manufacturing a display device are provided. A representative method includes: providing a substrate, the substrate having an insulating layer with an opening and having a metal layer under the opening, wherein a part of the metal layer does not serves as a portion of a thin film transistor; providing a carrier substrate supporting a plurality of light emitting diodes; conducting a testing to the plurality of LEDs on the carrier substrate; transferring at least one of the plurality of LEDs from the carrier substrate to the opening of the substrate; and fixing the at least one of the plurality of LEDs to the substrate.

Abstract: It is suggested to provide a line marking device having a GNSS receiver or prism for a robotic total station. The line marking device further has at least one spray nozzle and a comparator adapted to compare a detected location to a predetermined pattern. The comparator calculates a location and/or a direction error. Further the line marking device has a prompting device for providing steering information to a user. The provided information is the location and/or direction error. The at least one spray nozzle and the GNSS receiver or the prism are in a fixed spatial relation to a connecting element, which is connected or connectable to an unmovable receiving element of a cart.

Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

Abstract: A surface adhering mobile coating apparatus includes a surface adhering and traveling device, a spray nozzle, and a spray nozzle X-axis drive device, and a spray nozzle Y-axis drive device.

Abstract: A space filler for forming a fibrous preform may comprise an additively manufactured ceramic material. The additively manufactured ceramic material may define a plurality of pores. A shape of the additively manufactured ceramic material may complement a shape of a void formed by fibrous regions of the fibrous preform.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: Embodiments of the present disclosure provide a method, system, and computer program product for monitoring a service life of a chamber component. In one example, the method includes receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber. The processor compares the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component. The processor determines whether the one or more power measurements exceed the threshold values. If the processor determines that the one or more power measurements exceed the threshold values, the processor takes remedial measures for the service life of the chamber component.

Abstract: Aspects of the present disclosure relate to systems and methods for determining a state of a serial memory device. Certain embodiments provide a method of determining a state of a serial memory device. The method includes enabling the serial memory device using a first signal. The method further includes receiving a flag indicating a state of the serial memory device based on the enabling of the serial memory device using the first signal.

Abstract: Embodiments described herein relate to methods of forming silicon nitride films. In one embodiment, a first process gas set including a silicon-containing gas and a first nitrogen-containing gas is flowed into the process chamber. An initiation layer is deposited by applying a first radio frequency power to the first process gas set at a first frequency and a first power level. The first flow of the first nitrogen-containing gas of the first process gas set is discontinued and a second process gas set including the silicon-containing gas, a second nitrogen-containing gas, and a hydrogen-containing gas is flowed into the process chamber. A bulk silicon nitride layer is deposited on the initiation layer by applying a second RF power to the second process gas set at a second frequency higher than the first frequency and a second power level higher than the first power level.

Abstract: A sinusoidal traffic line that has scalloped edges to form a sine wave that increases visibility under conditions of reduced visibility is formed of a pre-cut ribbon or applied traffic line material (e.g., sprayed thermoplastic material). The traffic lines have a wavy left edge and a wavy right edge. The edges are formed in a regular pattern, having a regular amplitude and wavelength relative to a directional vector along the axis of the traffic line. The patterns of the outer edges can be arranged in an opposite arrangement such that they converge and diverge. The upper surface of the traffic line can be embossed by an embossed device so as to create a regular pattern and increase reflectivity.

Abstract: Sensors based on single-walled carbon nanotubes (SWNT) are integrated into a microfluidic system outfitted with data processing and wireless transmission capability. The sensors combine the sensitivity, specificity, and miniature size of SWNT-based nanosensors with the flexible fluid handling power of microfluidic “lab on a chip” analytical systems. Methods of integrating the SWNT-based sensor into a microfluidic system are compatible with the delicate nature of the SWNT sensor elements. The sensor devices are capable of continuously and autonomously monitoring and analyzing liquid samples in remote locations, and are applicable to real time water quality monitoring and monitoring of fluids in living systems and environments. The sensor devices and fabrication methods of the invention constitute a platform technology, because the devices can be designed to specifically detect a large number of distinct chemical agents based on the functionalization of the SWNT.

Abstract: Embodiments of the present disclosure provide a method, system, and computer program product for monitoring a service life of a chamber component. In one example, the method includes receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber. The processor compares the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component. The processor determines whether the one or more power measurements exceed the threshold values. If the processor determines that the one or more power measurements exceed the threshold values, the processor takes remedial measures for the service life of the chamber component.

Abstract: An electronic component, such as a circuit board, fabricated by coextruding an Ultra High Molecular Weight Polyethylene (UHMWPE) filament, such as a Dyneema® filament, and a conductive material, such as an Indalloy wire, using only a three-dimensional printer, such as an FDM machine.

Abstract: A solder and methods of forming an electrical interconnection are shown. Examples of solders include gallium based solders. A solder including gallium is shown that includes particles of other solders mixed with a gallium based matrix. Methods of applying a solder are shown that include swiping a solder material over a surface that includes a resist pattern. Methods of applying a solder are also shown that include applying a solder that is immersed in an acid solution that provides a fluxing function to aid in solder adhesion.

Abstract: A method is used to identify and compensate for errors created by changes in the relative positions of a deposition unit and a vision system of a dispenser. The method includes calibrating the vision system, dispensing a pattern of features over a working area, moving the vision system over a deposition location to locate a deposition, obtaining an image of the deposition, tagging data associated with the image, calculating a relative distance between the deposition unit and the vision system, storing correction data with spatial location in a file for later use, and using the stored data to make small corrections prior to dispensing additional material.

Abstract: An electrostatic chuck includes a puck having a support surface to support a substrate when disposed thereon and an opposing second surface, wherein one or more chucking electrodes are embedded in the puck, a body having a support surface coupled to the second surface of the puck to support the puck, a DC voltage sensing circuit disposed on support surface of the puck, and an inductor disposed in the body and proximate the support surface of the body, wherein the inductor is electrically coupled to DC voltage sensing circuit, and wherein the inductor is configured to filter high frequency current flow in order to accurately measure DC potential on the substrate.

Abstract: A line scribing method of a line scriber includes the steps of providing an electronic map; planning a line scribing path on the electronic map; converting the planned line scribing path into a plurality of planned geographical coordinates; transmitting the planned geographical coordinates to a line scriber; positioning a location to be scribed by the line scriber via a satellite connection to generate a positioning coordinate; comparing the positioning coordinate with an starting geographical coordinate of the planned geographical coordinates, and correcting the planned geographical coordinates according to the difference between the positioning coordinate and the starting geographical coordinate if the positioning coordinate is unequal to the starting coordinate, or moving the line scriber according to the planned geographical coordinates sequentially to perform a line scribing operation if the positioning coordinate is equal to the starting coordinate, so that the line scriber can perform a line scribing o

Abstract: An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. A gas inlet provides gas into the processing chamber. An exhaust pressure system exhausts gas around a periphery of the substrate, wherein the periphery around the substrate is divided into at least three parts, wherein the exhaust pressure system controls exhaust pressure to control a velocity of the gas over the substrate, wherein the exhaust pressure system provides at independent exhaust pressure control for each part of the periphery for the at least three parts.

Abstract: A bridge paving device includes one or more reference receivers to locate the bridge paving device in three-dimensional space. A computer apparatus receives the location of the bridge paving device and associates the location with a bridge paving design profile. The computer apparatus independently actuates a system of hydraulic actuators of the bridge paving device to level and orient the bridge paving device regardless of the travel surface the linear movement elements are running on. Additional hydraulic actuators may adjust the shape of the bridge paving device over time as the bridge paving device travels a linear distance of the bridge to be paved. The shape adjustment alters a crown or inversion applied to the bridge such that run-off characteristics are more variable and controllable along the entire span of the bridge.

Abstract: A substrate treating apparatus includes a first treating block and a second treating block disposed adjacent to the first treating block. Each of the first treating block and the second treating block include a plurality of stories arranged vertically. Each of the plurality of stories includes treating units for treating substrates and a main transport mechanism for transporting the substrates to and from the treating units. The substrates are transportable between the stories of the first treating block and the stories of the second treating block at same heights as corresponding stories of the first treating block. The substrates are transportable between the stories of the first treating block and the stories of the second treating block at different heights from corresponding stories of the first treating block.

Abstract: Compound layers, such as metal silicon nitrides, are formed by ALD or CVD from precursors with incompatible reaction temperature ranges. The substrate is held at a temperature within the lower reaction temperature range (e.g., that of a metal precursor). The low-temperature precursor and its reactant react to form an ALD monolayer or thin CVD layer. The high-temperature precursor and its reactant are pulsed in the chamber, and the substrate is irradiated with ultraviolet light. The ultraviolet light adds energy to the system to overcome the reaction barrier despite the substrate temperature being below the minimum reaction temperature of the high-temperature precursor.

Abstract: A process gas supply cycle pattern that will adversely affect the result of processing is changed beforehand. Based on information supplied from a setting input section, a pattern computation section obtains the result of computation of a process gas supply cycle pattern that includes a rotation cycle of a substrate rotation mechanism, a supply cycle of a process gas, a supply time of the process gas, and a supply count of the process gas. Based on information supplied from the setting input section, a simulator simulates the shape of a supply region of the process gas to be supplied onto a substrate. A comparison section compares the result of computation of the process gas supply cycle pattern determined by the pattern computation section against the result of referencing of a process gas supply cycle pattern that adversely affects the result of processing and is obtained from a storage section.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: carrying a substrate, which has a Ge-containing film on at least a portion of a surface thereof, into a process chamber; heating an inside of the process chamber, into which the substrate is carried, to a first process temperature; and terminating a surface of the Ge-containing film, which is exposed at a portion of the surface of the substrate, by Si by supplying at least a Si-containing gas to the inside of the process chamber heated to the first process temperature.

Abstract: A thin film having a high resistance to HF and a low dielectric constant is formed with high productivity. A method of manufacturing a semiconductor device, includes performing a cycle a predetermined number of times, the cycle including: (a) supplying a source gas containing a predetermined element, carbon and a halogen element and having a chemical bond between the predetermined element and carbon to a substrate; and (b) supplying a reactive gas including a borazine compound to the substrate, wherein the cycle is performed under a condition where a borazine ring structure in the borazine compound and at least a portion of the chemical bond between the predetermined element and carbon in the source gas are preserved to form a thin film including the borazine ring structure and the chemical bond between the predetermined element and carbon on the substrate.

Abstract: A translucent member 41 that has been trial-coated with a resin 8 for measurement of a light emission characteristic is placed on a translucent member placement portion 53, an excitation light that excites a phosphor is emitted from a light source unit 42 disposed above, the resin 8 coated on the translucent member 41 is irradiated with the excitation light from above, a deviation between a measurement result obtained by measuring the light emission characteristic of the light emitted from the resin 8, and a light emission characteristic specified in advance is obtained, and an appropriate resin coating amount of the resin to be coated on the LED element for actual production is derived on the basis of the deviation.

Abstract: A monitoring device (14) and a method for monitoring spray coating of a component by a spraying device (1) including a spray nozzle (3) movable along a specific path in relation to a component surface to be coated. The device has: an input interface (15) for inputting geometry data representative of the geometry of the component surface; a path data recording device (17) for time-resolved recording of path data of the spray nozzle (3) in relation to the component surface; a process data recording device (19) for time-resolved recording of process data of the coating process using the spray nozzle (3); a simulation unit (21) connected to the input interface (15) for receiving the data, for simulating application of the spray coating to the component surface on the basis of the data recorded; and a deviation calculation unit (23), connected to the simulation unit (21), for receiving simulation data and calculating a deviation of the simulated coating from the desired coating.

Abstract: A semiconductor manufacturing equipment includes a buffer chamber, a load port, a first chamber, and a second chamber respectively connected with the buffer chamber at a different side. The semiconductor manufacturing equipment also has a third chamber in the buffer chamber, the third chamber configured for cooling a wafer, and a single blade robot in the buffer chamber. Moreover, the semiconductor manufacturing equipment has a controller including a program, wherein the program elevates a wafer transfer priority for the first chamber and the second chamber higher than a wafer transfer priority for the third chamber.

Abstract: A pre-treatment method for plating can form a plating layer having sufficient adhesivity on an inner surface of a recess and on a surface of a substrate at an outside of the recess even when the recess has a high aspect ratio. The pre-treatment method for plating includes a preparation process of preparing the substrate having the recess; a first coupling layer forming process of forming a first coupling layer 21a at least on the inner surface of the recess of the substrate by using a first coupling agent; and a second coupling layer forming process of forming a second coupling layer 21b at least on the surface of the substrate at the outside of the recess by using a second coupling agent after the first coupling layer forming process.

Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit.

Abstract: A machine tool arranged to deliver an energy source through a processing head onto a work-piece, wherein; the machine-tool has a clamping mechanism arranged to temporarily receive the processing-head, or another machining or processing-head, to process a work-piece; the processing-head comprising one or more guiding mechanisms arranged to direct the energy source onto a work-piece and a processing-head docking-manifold arranged to have connected thereto one or more media to be, in use, supplied to the processing-head to facilitate processing of the work-piece; wherein the processing-head docking-manifold allows the one or more media to be supplied to the processing-head when the processing-head is connected to the clamping mechanism; and wherein the machine-tool also comprises at least one mechanism arranged to move a supply docking-manifold into and/or out of connection with the processing-head docking-manifold such that when the two manifolds are connected the or each media is supplied to the processing

Abstract: For optical surface of a spectacle lens, providing a first set of rules to determine if features of an optical surface from a list of features are compatible with a functional coating from a list of functional coatings, and a second set of rules to determine a modified optical surface if features of an optical surface and a functional coating are not compatible; choosing within the list a functional coating for addition to said optical surface; analysing the quality and identifying features of the optical surface; determining with the first set of rules if features of the optical surface and the chosen functional coating are compatible and, if so, depositing the chosen functional coating on the optical surface; otherwise, forming a modified optical surface which is compatible with the chosen functional coating determined with the second set of rules and depositing the chosen functional coating on the modified optical surface.

Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a plurality of substrates and to be supplied with a gas generated by vaporizing or turning into mist a solution containing a reactant in a solvent; a lid configured to close the reaction tube; a first heater configured to heat the plurality of substrates; a thermal conductor placed on the lid on an upper surface thereof; a second heater placed outside the reaction tube around a side thereof, the second heater being configured to heat the gas flowing near the lid; and a heating element placed on the lid on a lower surface thereof, the heating element configured to heat the lid.

Abstract: A curtain coating method including forming a curtain including a coating material. A coated web is formed by coating a moving primary web with the coating material. The curtain and the primary web meet at a contact line. A primary pattern is projected on a material layer. The material layer moves with respect to the contact line. The primary pattern includes a first pointer feature. A first image is captured. The first image includes a first sub-image of the first pointer feature. The position of the first sub-image is in the first image is detected. Distance information is provided by comparing the detected position of the first sub-image with a reference position.

Abstract: Provided herein are methods and apparatus for forming flowable dielectric films having low porosity. In some embodiments, the methods involve plasma post-treatments of flowable dielectric films. The treatments can involve exposing a flowable film to a plasma while the film is still in a flowable, reactive state but after deposition of new material has ceased.

Abstract: Provided herein are methods and apparatus for improved flowable dielectric deposition on substrate surfaces. The methods involve improving nucleation and wetting on the substrate surface without forming a thick high wet etch rate interface layer. According to various embodiments, the methods may include single or multi-stage remote plasma treatments of a deposition surface. In some embodiments, a treatment may include exposure to both a reducing chemistry and a hydrogen-containing oxidizing chemistry. Apparatus for performing the methods are also provided.

Abstract: A system for coating a non-rotating pipe work piece including: valves, flow lines, and a mixing block for receiving a first and a second component material each delivered at a pressure, flow measurement devices to measure the flows of the components, a static mixer in fluid communication with the mixing block for receiving the combined components, a C-shaped plate member arranged around the work piece, a drive mechanism to oscillate a partial rotation of the C-shaped member about the work piece with the rate of oscillations controlled by a logic controller, at least two spray guns disposed on the C-shaped member to spray towards the outside surface of the work piece, a drive mechanism to traverse the at least two spray guns longitudinally with the rate of traverse controlled by a logic controller; and the logic controller(s) programmed to control based on a number of input and measured parameters.

Abstract: A film forming method includes: forming a thin unit film on a target substrate by supplying processing gases sequentially and intermittently into a processing space, where the target substrate is placed, in a processing chamber of a film forming apparatus while purging the processing gases with a purge gas constantly supplied into the processing space; and repeating the forming of the thin unit film to form a film having a predetermined thickness on the target substrate. A flow rate of the purge gas supplied into the processing space is set such that the film is formed in a film forming mode in which the thin unit film is formed, irrespective of a pressure in the processing chamber.

Abstract: According to the present disclosure, a film containing a predetermined element, carbon and nitrogen is formed with high controllability of a composition thereof. A method of manufacturing a semiconductor device includes forming a film containing a predetermined element, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first processing gas containing the predetermined element and a halogen element to the substrate, supplying a second processing gas composed of three elements of carbon, nitrogen and hydrogen to the substrate, and supplying a third processing gas containing carbon to the substrate.

Abstract: Disclosed are a method and system for eliminating yellow ring phenomenon occurring on the white light emitting diode (LED) based on a blue light chip exciting yellow phosphor powders and having a packaging surface enclosing thereon. Lightspot images are repeatedly acquired outside the white LED, and then each analyzed to see if the yellow ring still exists on a lightspot. If yes, a further atomization process is performed on the packaging surface of white LED, until the acquired and analyzed image shows no yellow ring exists. A lightspot-by-lightspot basis is used in the yellow ring elimination task. In the image analysis, a look up table may be provided in advanced or established at the same time simultaneously with the yellow ring elimination task. The atomization performed on the lightspot may also consider a width issue.

Abstract: A deposition system can conduct ALD or CVD deposition and can switch between the deposition modes. The system is capable of depositing multi-metal films and multi-layer films of alternating ALD and CVD films. Reactant supplies can be bypassed with carrier gas flow to maintain pressure in a reactor and in reactor supply lines and purge reactants.

Abstract: Disclosed herein are methods of depositing layers of material on multiple semiconductor substrates at multiple processing stations within one or more reaction chambers. The methods may include dosing a first substrate with film precursor at a first processing station and dosing a second substrate with film precursor at a second processing station with precursor flowing from a common source, wherein the timing of said dosing is staggered such that the first substrate is dosed during a first dosing phase during which the second substrate is not substantially dosed, and the second substrate is dosed during a second dosing phase during which the first substrate is not substantially dosed. Also disclosed herein are apparatuses having a plurality of processing stations contained within one or more reaction chambers and a controller with machine-readable instructions for staggering the dosing of first and second substrates at first and second processing stations.

Abstract: A substrate processing apparatus includes: an operation unit, which is provided with a storage unit that stores a plurality of recipes including a recipe for processing a member that constitutes the inside of a reactor in which substrate processing is performed, and a recipe for processing an exhaust pipe through which a gas released from the inside of the reactor flows, the operation unit further being provided with a display unit that displays a setting condition for executing the recipes on an operation screen; and a control unit that executes the recipe that meets the setting condition. The operation unit includes a recipe control unit, which controls, based on the setting condition, execution of the recipe for processing the member constituting the inside of the reactor in which the substrate processing is performed, and the recipe for processing the exhaust pipe, among the recipes stored in the storage unit.

Abstract: A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.

Abstract: Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.

Abstract: Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.

Abstract: Provided are methods of forming ashable hard masks (AHMs) with high etch selectivity and low hydrogen content using plasma enhanced chemical vapor deposition. Methods involve exposing a first layer to be etched on a semiconductor substrate to a carbon source and sulfur source, and generating a plasma to deposit a sulfur-doped AHM or amorphous carbon-based film on the first layer.

Abstract: A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).

Abstract: Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.

Abstract: A substrate processing method includes a first step of subjecting a target substrate to a gas process within an atmosphere containing a fluorine-containing process gas, thereby forming a fluorine-containing reaction product on a surface of the target substrate. The method further includes a second step of subjecting the target substrate treated by the gas process to a heating process and a gas process within an atmosphere containing a reactive gas that reacts with fluorine.