Abstract: Methods and apparatus for plasma modifying a substrate are disclosed along with associated techniques for applying coatings to the substrate. Particular utility has been found using a hollow cathode to generate the plasma along with magnetic focusing means to focus the plasma at the surface of a substrate.

Abstract: A gas purged counter-electrode prevents the counter-electrode from being covered with dielectric material by flowing gas past a surface of a metal element. The gas purged counter-electrode produces a relatively high-density plasma which effectively acts as the counter-electrode for a coating system. The gas purged counter-electrodes can be used with PECVD or sputtering systems.

Abstract: A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion source by positively biasing the anode and negatively biasing the cathode, the bias in each instance being relative to the chamber. The ion source ionizes the process gas producing ions for processing a substrate disposed on a substrate holder in the chamber. One embodiment includes two such ion sources. In this case, the power source energizes the first and second anodes and the cathodes in a time multiplexed manner, such that only one of the first or second ion sources is energized at any time and interactions between ion sources are eliminated.

Abstract: A thin-film deposition apparatus includes an arc vaporization portion from which charged particles of a deposition material are generated by a cathodic arc discharge, a plasma duct having a bend and guiding the charged particles from the arc vaporization portion to a substrate, a magnetic field generator for generating magnetic fields to direct the charged particles from the arc vaporization portion to the substrate, and a reflective magnetic field source installed in a convex portion of the bend of the plasma duct, for generating magnetic fields that interfere with the magnetic fields formed by the magnetic field generator so that magnetic flux lines are distributed along the plasma duct.

Abstract: An improved electrode contact system for metal vaporization electrodes or rods which are electrically and supportively connected to a movable carriage which also receives and supports objects such as parts and components in a vacuum chamber during metal vapor deposition. A metal such as aluminum, chromium, or nickel-chromium, etc. is vaporized centrally in the chamber by contact with electrically energized electrodes or elongated rods in a well known fashion after the chamber has been substantially evacuated of air molecules for uniform vapor deposition of the vaporized metal atop exposed surfaces of the objects. The electrode contact system provides an automatic, self-aligning plug-in assembly for each electrode rod so that, as the carriage, loaded with parts and components to be metal vapor coated is rolled into position within the vacuum chamber, each two-part contact system automatically fully engages.

Abstract: The present invention provides a method and apparatus for improving thermal management of gas being delivered to a chemical vapor deposition chamber. Thermal management is accomplished using a heat transfer fluid in thermal communication with the deposition gas passageways delivering the gases to the chamber for deposition. The gas injection manifold includes gas passageways and coolant liquid passageways, wherein the gas passageways extend through a constant voltage gradient gas feedthrough and the coolant liquid passageways extend through a gas input manifold coupled to the inlet end of the constant voltage gradient gas feedthrough. This arrangement provides for increase coolant liquid flow and allows maintenance or disassembly of the constant voltage gradient gas feedthrough without breaking the seal on the coolant liquid system.

Abstract: The present invention provides an electron-beam excited plasma generator which can effectively form samples of larger areas.

Abstract: In an apparatus for the deposition of polycrystalline diamond on large, flat substrates (3) by the plasma method, with a vacuum chamber (4); with locks for the inward and outward transfer of the substrates; with a device installed in the chamber (4) for conveying the substrates (3) through at least one, preferably through two treatment stations; with hot-filament sources (5, 5', . . . ) forming a first group, installed above the plane of the substrates; with microwave plasma sources (8, 8', . . . ) forming a second group; with an electrode (11) fed with radio frequency underneath the plane of the substrates for generating a bias voltage; and with gas feed pipes (6, 9) opening into the vacuum chamber (4), the hot-filament arrangements (5, 5', . . . ), designed as linear sources, are arranged transversely to the substrate transport direction (a) and form a first coating zone (Z.sup.1), where the microwave plasma sources (8, 8', . . .

Abstract: A method and an apparatus have been developed to deposit heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus includes a graphite plate as the carbon source and the silicon substrate as the silicon source. Hydrogen was the only feeding gas to the system.

Abstract: An apparatus for adjusting the tension on a heating filament in a reactor used in carbon deposition on a substrate via chemical-vapor deposition is disclosed, as is a method for preventing breakage of the filaments during operation. The apparatus comprises a force regulator attached to an array of heating filaments. Preferably, the force regulator is adjustable and is adjusted prior to reactor operation and/or periodically or continuously as the filaments lengthen due to carburization in the carbon-vapor environment of the reactor. The adjustable force regulator attached to an array of filaments enables effective regulation of the force on a filament during reactor operation and provides an easily-maintained reactor with quick turn-around time between cycles of use.

Abstract: A process provides for the reactive treatment of workpieces in which a plasma beam is produced in an evacuated recipient. With respect to the area of the highest plasma density along the beam axis, workpieces are arranged in a radially offset manner. Fresh reactive gas is charged into the recipient and used-up gas is sucked out of the recipient. A vacuum treatment system comprises a plasma beam production arrangement, a gas inlet operatively connected with a reactive gas supply, an axially extending workpiece carrier arrangement radially set off from an axis of a plasma beam produced by the plasma beam production arrangement. The workpiece carrier arrangement mounts a rotational surface coaxial with respect to the axis of the plasma beam and a gas suction system. The process and system are used to deposit metastable layers, including cBN-layers, .alpha.-Al.sub.2 O.sub.3 layers, C.sub.3 N.sub.

Abstract: An atomic hydrogen source. The source has an elongated cylindrical structure with proximal and distal or inner and outer ends. A head structure is disposed at the proximal end for communicative connection with electrical power, gas, temperature control and related systems. A mounting flange is disposed along the length of the source for connection with an MBE or other apparatus. A tube structure is disposed at the distal end for extension into the apparatus. The tube structure includes gas and power conduction elements, including a high temperature resistive filament for cracking gas.

Abstract: A plasma processing apparatus comprises a vacuum chamber, a plasma beam generator arranged in the vacuum chamber, and a main hearth located in the vacuum chamber and is for carrying out a step of a plasma beam produced by the plasma beam generator to the main hearth. The plasma processing apparatus further comprises a permanent magnet and a hearth coil arranged in the vicinity of the main hearth to be concentric with a center axis of the main hearth to be concentric with a center axis of the main hearth. The meltability of a material and the flight distribution of the vapor particles derived from a vaporizable material are adjusted by varying an electric current supplied to the hearth coil.

Abstract: Apparatus for coating substrates 31, 31", . . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further, including magnets 26, 27 directing the plasma cloud 28 onto the surface of the substrates 31, 31" . . . wherein this device for generating the plasma cloud 28 has an election emitter 11 and a downstream tubular anode 38, the anode has an inlet 10 for the process gas to ignite the plasma and, further, the device is provided with magnets 4, 7 for directing and guiding the plasma through the anode tube 38 into the process chamber 43 and including a device for generating atoms, molecules or clusters of the materials for producing a layer on the substrates 31, 31", . . . , preferably an electron beam evaporator 37 from which the evaporated or sputtered material 33 can be directly applied onto the substrates 31, 31" . . . .

Abstract: A method and an apparatus for forming a charge neutral ion beam which is useful in producing thin films of material on electrically conductive or non-conductive substrates are provided.

Abstract: A substrate surface is coated with a permeation barrier of inorganic material, which is vaporised from a crucible in a vacuum chamber evacuated to at least 10.sup.-3 mbar and precipitated on the substrate surface. An ionizing electron beam of low energy is thus passed through the gas phase of inorganic material with formation of a plasma, preferably in the direction running approximately parallel to the substrate surface. At least one low voltage electron beam gun with assigned electrode is incorporated in the vacuum chamber between the crucible and the substrate support. The main application is for coating plastic films for the packaging industry.

Abstract: A reactive ion etching or magnetically enhanced reactive ion etching system consists of a cathode support structure, a shield structure disposed around the cathode, an insulator disposed between the cathode and the shield structure, and a clamping ring capable of mating with the top edge of the insulator. The insulator has a generally cylindrical shape with a flange that extends outward between the shield structure and the clamping ring. A gap between the clamping ring and the top edge of the insulator is controlled to 20 thousandths of an inch or less to restrict an RF coupling path between the shield and the cathode. In addition, the flange acts to interrupt the plasma conduction path between the shield structure and the cathode. By inhibiting plasma conduction between the shield and the cathode, reactive ion etching systems in accordance with the present invention operate in a higher pressure, higher power regime without arcing or exciting a secondary plasma.

Abstract: A gas jet film deposition system includes a source of thermionically emitted electrons which are accelerated through carrier gas and generate He ions by impact ionization. The resultant electron avalanching and multiplication generates an extremely dense plasma, and produces large electron currents. The electron current is collected at a free, high electric field end of a crucible. The present system can generate vaporized evaporant which is entrained in the gas jet and thereby provide a high density source of ions. The ions may be presented to a substrate together with or without the evaporant.

Abstract: An ionization deposition apparatus includes an ion source which is located in a vacuum chamber and which is provided with gas introduction ports for supplying a gaseous film material into the vacuum chamber, a filament unit, which is separated into a plurality of independently controllable filaments, for generating thermoelectrons when the filaments are heated by filament currents, and an anode electrode for accelerating and colliding the thermoelectrons against molecules of the gaseous film material to thereby turn the molecules to plasma. A holder for holding a to-be-deposited object, the holder being placed confronting the anode electrode of the ion source in the vacuum chamber, and connected to a bias source to attract ions in the plasma to a surface of the holder.

Abstract: A plasma ion implantation apparatus includes a vacuum chamber that receives the object within its walls. The object is supported upon an electrically conductive base that is electrically isolated from the wall of the vacuum chamber. An electrically conductive enclosure is positioned between the object and the wall of the vacuum chamber and supported upon the base. The enclosure is made of an electrically conductive material. A plasma source is positioned so as to create a plasma in the vicinity of the object to be implanted. A voltage source applies an electrical voltage to the base and thence the enclosure relative to the wall of the vacuum chamber. Secondary electrons emitted from the object during implantation are reflected back into the plasma by the enclosure, reducing X-ray production and improving plasma efficiency.

Abstract: There is disclosed a method for depositing a diamond film on a substrate which utilizes high density direct current glow discharge at a glow-arc transition region to form plasma between a cathode and an anode in a reactor, wherein the cathode maintains its temperature at a range of 2,100 to 2,300.degree. C. and is composed of a plurality of U-shaped filaments which are aligned parallel to one another to form an array and each of which is made by bending a conductive wire.

Abstract: A thin film deposition system includes a vacuum or evacuated casing in which there is introduced an active gas or an inert gas or a mixture thereof. A filament emits thermions which impinge upon gas molecules to ionize them into positive ions. The ions bombard a target, from which particles are emitted toward a substrate. The particles emitted from the target are also ionized by the thermions. In the vicinity of a grid, more particles from the target are ionized by thermions which are vertically oscillated and ionized molecules of the gas. The ions are accelerated toward the substrate and bombard the substrate, thereby depositing a thin film thereon. The thin film deposition system may additionally have an evaporation source for supporting an evaporant which emit particles to be deposited on the substrate.

Abstract: The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating.

Abstract: A cathode chamber (1) with a thermionic cathode (3) generates a low-voltage arc discharge in a vacuum treatment chamber (11). Arcing on wall portions of the treatment chamber (11) is prevented by providing a screen (20), operated so as to be electrically floating, in the region of a diaphragm (9), through which diaphragm (9) the discharge is drawn from the cathode chamber (1) into the treatment chamber (11). The discharge is ignited by impressing portions of the cathode chamber wall with the ignition potential, with respect to the potential of the cathode (3).

Abstract: A diamond-like thin film of good quality is prepared homogeneously and fast in a deposition. A mesh-like acceleration electrode is provided at the opening of a chamber including a filament, and a plasma is generated in the chamber. Because the chamber is isolated electrically from the electric system of the apparatus, the high density and the equilibrium state are maintained, and the plasma density and the potential are homogenized around the mesh-like electrode. In this state, a bias potential is applied to the substrate, and the ions are accelerated according to the potential difference between the plasma and the substrate to deposit a diamond-like thin film on the substrate. Preferably, a negative potential electrode is provided before or around the substrate. Further, an insulating member is provided to surround a flight path of ions between the chamber and the substrate.

Abstract: An apparatus for a reactive treatment of the surface of a workpiece, in which a process gas is brought into a chamber and a direct voltage arc discharge is generated in the chamber, the arc discharge is assisted or maintained, respectively by introducing a flow of charged particles. In known treatment methods, plasma generated in the direct voltage arc are generally distributed non-homogeneously in the inner space of the chamber and the area with a density of the plasma which is sufficient for the reactive surface treatment is relatively small. According to the invention this problem is solved in that the distribution of the effect of the treatment of the plasma in the chamber at least along a predetermined plane is set, and specifically by a distribution of openings for the process gas over a given area and/or by a distribution of the arc discharges in the chamber over a given area. The flow of charged particles enters into the chamber via a plurality of distribution openings.

Abstract: Apparatus for the deposition of a material such as diamond on a substrate by chemical vapor deposition is provided. The apparatus comprises:support shelf on which the substrate is located;a resistance heating element in the form of an elongate strip of conductive material having at least one curved section in its length; the elongate strip being positioned relative to, and spaced from, the substrate such that it presents an elongate edge to the substrate and an elongate edge away from the substrate; andmeans such as a perforated pipe for causing reaction gas for the deposition to pass across the elongate strip from one longitudinal edge to the other and then to the support shelf and the substrate located thereon.