Abstract: Hollow porous fibers containing adhered contaminants are cleaned to remove the contaminants by backflushing a liquid to fill the pores, and adding a flow of gas so as to form a two-phase mixture of gas and bubbles of liquid that can scrub the fibers, loosening the contaminants and allowing them to be flushed from the hollow fibers. The method is particularly useful for cleaning hemodialyzers used for dialysis and hollow fiber modules used in water treatment and separations. The two phase flow method is specifically effective in cleaning piping systems having high length to diameter (l/d) ratios.

Abstract: Disclosed is a novel process for cleaning and restoring the operating efficiency of organic liquid chemical exchangers in a safe and effective manner and in a very short period of time, without a need to disassemble the equipment and without the need to rinse contaminate from the equipment after cleaning. Used is a formulation of monocyclic saturated terpene mixed with a non-ionic surfactant package specifically suited to oil rinsing. The terpene-based chemical is injected into organically contaminated exchangers using a novel process involving high-pressure steam to form a very effective cleaning vapor.

Abstract: Disclosed are systems and methods for removing stubborn contaminants, aluminum fluoride and aluminum chloride in particular, from components of semiconductor-processing equipment. One embodiment forces steam through small holes in a gas distribution plate to remove build up on the interior walls of the holes. A cleaning fixture disposed between the steam source and the gas distribution plate delivers the steam at increased pressures. The gas distribution plate can be immersed in water during cleaning to capture the exiting steam.

Abstract: A method for cleaning a plasma enhanced chemical vapor deposition chamber. The method includes introducing a cleaning gas into the plasma enhanced chemical vapor deposition chamber, forming a plasma using a very high frequency (VHF) power having a frequency in a range from about 20 MHz to about 100 MHz, and reacting the cleaning gas with deposits within the chamber in the presence of the plasma.

Abstract: A method facilitates washing a gas turbine engine combustor. The method comprises coupling a nozzle assembly against the combustor, wherein the nozzle assembly includes an inlet end, a discharge end, a hollow nozzle body extending therebetween, and a centerbody positioned within the nozzle body, coupling the nozzle assembly to a fluid source, and discharging an annulus of fluid from the nozzle assembly into the combustor to facilitate removing particulate matter from the combustor.

Abstract: The invention proposes a process and device for the at least partial elimination of carbon deposits in a heat exchanger in which an oxidation treatment is carried out comprising at least one controlled-oxidation stage at a conventional temperature between 400 and about 500° C. for a period of at least 4 hours, by means of an oxidizing fluid comprising for the greater part an inert gas, and a lesser quantity of oxygen, under conditions such that the temperatures of the fluids feeding or leaving the heat exchanger remain below about 520° C. throughout the oxidation treatment, and in that the hot approach of the exchanger remains below about 120° C. throughout the oxidation treatment. The invention also relates to a hydrotreatment system for the implementation of this process and this device.

Abstract: A high-pressure device has a drill stem (242) with a drill head (244) delivering a high-pressure fluid jet. A shield (246) is movably coupled to the device, wherein the drill head (244) is at least partially enclosed by the shield (246) when the drill head (244) is removed from the container (23).

Abstract: A method for cleaning a plasma chamber after metal etching. First, a substrate having a metal layer thereon is placed in a plasma chamber. Next, the metal layer is etched. Finally, the substrate is removed from the plasma chamber to perform a dry cleaning which includes the following steps. First, the inner wall of the plasma chamber is cleaned by plasma etching using oxygen as a process gas. Next, the top and bottom electrode plates in the plasma chamber are cleaned by plasma etching using chlorine and boron chloride as process gases. Next, the inner wall of the plasma chamber is cleaned again by plasma etching using sulfur hexafluoride and oxygen as process gases. Finally, oxygen and helium used as purging gases are injected into the plasma chamber and exhausted from therein.

Abstract: Method and apparatus for substantially cleaning fill from a borehole, variously including in preferred embodiments disturbing particulate solids of fill while RIH, entraining particulates while POOH, jetting downhole while RIH and jetting uphole while POOH, and controlling at least one of a pump rate regime or a POOH rate regime.

Abstract: An exemplary cleaning apparatus for cleaning a system having a first fluid and a system pump is provided, wherein the apparatus comprises a tank including a second fluid. The cleaning apparatus also comprises an apparatus pump for pumping a predetermined amount of the second fluid from the tank into the system while the system pump is off. The cleaning apparatus further comprises an output hose, a return hose, and a filter between the return hose and the output hose. After the predetermined amount of the second fluid is pumped into the system, the system pump is turned on to pump the first fluid and the second fluid out of the return line through the filter and into the output hose and back into the system.

Abstract: A method and apparatus for cleaning a processing chamber are provided. The cleaning method includes the use of a remote plasma source to generate reactive species and an in situ RF power to generate or regenerate reactive species. The reactive species are generated from a carbon and fluorine-containing gas and an oxygen source.

Abstract: A method of sampling contaminants of a semiconductor wafer carrier. The method includes placing a tool chamber in a clean room and then placing and fixing the semiconductor wafer carrier with its opening facing downward inside the tool chamber. Then the method includes using at least one nozzle to spray extraction fluid uniformly on the inner surfaces of the semiconductor wafer carrier and collecting the extraction fluid.

Abstract: A flush system comprising a network of conduits, valves and screens that can be interposed between the process container and solvent re-claim tank components of a dry film photoresist (DFR) remover system, for example, that is used in the processing and packaging of integrated circuit chips. By operation of the valves in the flush system, DFR particles can be removed from the DFR remover system in order to prevent or minimize particle clogging of a particle filter in the DFR remover system. The screens in the flush system can be periodically cleaned by reverse flow of solvent or by operation of a nitrogen and DI (deionized) water purge system.

Abstract: A reprocessing unit for the reprocessing of a device having internal passageways by applying a fluid at a plurality of pressures to the internal passageways of the device to permit reuse of the device in a clean environment, the reprocessing unit including a pressure differentiation device for receiving a fluid having a single input pressure, the pressure differentiation device having first and second pressure control fittings for providing first and second differing pressure outputs in accordance with the single input pressure. Also included are tubing for transmitting the fluid at the first and second differing pressures from the pressure differentiation device to the internal passageways whereby the internal passageways are reprocessed with the transmitted fluid at the first and second differing pressures and the internal passageways are reprocessed at differing pressures in accordance with the single input pressure.

Abstract: The present invention is directed toward methods for cleaning catalytic converters, particularly it pertains to methods of submerging a catalytic converter into an aqueous bath and applying a pressurized fluid through the catalytic converter forcing ash from the channels within the catalytic converter.

Abstract: A vessel for the storage and transportation of bulk volumes of a fluid is described herein and a method for using same. The vessel contains a plurality of dividers that apportion the internal volume into a number of sections. The dividers within the vessel aid in minimizing sloshing of the fluid contained therein during transport. In addition, the dividers optimize the fluid flow pattern thereby allowing for the continuous purge of the vessel without the need for the application of a partial or full vacuum.

Abstract: Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.

Abstract: A method of cleaning the interior of a processing chamber first performs a halogenation treatment by supplying a treatment gas containing a halogenating gas into the processing chamber and heating a support member for a target substrate, thereby halogenating a metal element in a by-product film. A reduction treatment is then performed by supplying a treatment gas containing a reducing gas into the processing chamber, thereby reducing a halide of the metal element and liberating the metal element. An oxidation treatment is then performed by supplying a treatment gas containing an oxidizing gas into the processing chamber and heating the casing walls of the processing chamber, thereby passivating the liberated metal element by oxidation.

Abstract: Disclosed is a novel process for interior cleaning and by cleaning, removing noxious gas and/or restoring the operating efficiency of organically contaminated hydrocarbon processing equipment in a safe and effective manner and in a very short period of time, without a need to manually enter an unsafe environment and mechanically remove organic contaminants. Used is a formulation of non-aqueous, monocyclic saturated terpene mixed with a non-ionic surfactant package. The terpene-based chemical is injected into organically contaminated equipment using a novel process involving high-pressure steam to form a very effective cleaning vapor.

Abstract: There is provided methods for servicing a vehicle's transmission cooling system having inlet and outlet ports. An example method comprises the steps of pumping air into an inlet port of the transmission cooling system to cause transmission fluid to flow out of the outlet port of the transmission cooling system; cycling a solvent through the transmission cooling system, where the solvent enters through the inlet port and exits through the outlet port of the transmission cooling system; re-cycling the solvent exiting through the output port through the transmission cooling system; and pumping air into the inlet port to cause the solvent in the transmission cooling system to exit through the outlet port.

Abstract: The compressor cleaning system includes a track mounted about the inlet of the compressor. A circumferential position assembly mounts an insertion drive assembly which is driven about the track into selected circumferential positions. The insertion drive assembly carries a manipulator arm assembly mounting at its distal end a cleaning head. By using pairs of control cables, the proximal yaw, pitch and distal yaw sections of the manipulator arm can be moved to weave the cleaning head past the multiple stages of blading to locate the cleaning head adjacent a selected blade. By repeated extension and retraction of the cleaning head relative to the compressor inlet and about the compressor blades, each blade can be cleaned without disassembly of the compressor casing or removal of the rotor.

Abstract: The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF3) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization (“RTCVD”) systems.

Abstract: A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.

Abstract: Method and apparatus for determining an endpoint of a cleaning process running in a chamber. In particular, one embodiment of the present invention is a method that includes steps of: (a) directing radiation absorbed by a byproduct of the cleaning process into an exhaust line of the chamber; (b) detecting a measure of absorbance of the radiation by the byproduct; and (c) determining the endpoint when the measure of absorbance falls within a predetermined window.

Abstract: A method for cleaning a dish-cleaning appliance having a removable basket that carries a spray arm. The method comprises: uncoupling the liquid supply from the sprayer, spraying liquid against the peripheral side wall from the liquid supply, and draining the sprayed liquid from the wash chamber.

Abstract: Disclosed is a novel process for interior cleaning and by cleaning, removing noxious gas and/or restoring the operating efficiency of organically contaminated hydrocarbon processing dynamic devices in a safe and effective manner and in a very short period of time, without a need to manually enter an unsafe environment and mechanically remove organic contaminants. Used is a formulation of non-aqueous, monocyclic saturated terpene mixed with a non-ionic surfactant package. The terpene-based chemical is injected into the organically contaminated device using a novel process involving high-pressure steam to form a very effective cleaning vapor. The device is activated during the process. The vapor may be optionally directed against the normal-flow direction of the device.

Abstract: In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution. The chelating agent solution removes metallic contamination from the containers. The containers are then rinsed with a rinsing liquid, such as deionized water and a surfactant. The containers are then dried, preferably by applying heat and/or hot air movement.

Abstract: Disclosed is a cleaning method of a ceramic member, which permits removing with a high accuracy the contaminants from a ceramic member contaminated with the contaminant. The cleaning method comprises the steps of processing the contaminated ceramic member with an alkaline chemical liquid having a pH value not smaller than 10 in the presence of an ultrasonic wave, processing the ceramic member processed with the alkaline chemical liquid with a prescribed acidic chemical liquid in the presence of an ultrasonic wave, and heating the ceramic member processed with the acidic chemical liquid under temperatures not lower than 1,000° C.

Abstract: A method for the reprocessing of a device having internal passageways by applying a fluid at a plurality of pressures to the internal passageways of the device to permit reuse of the device in a clean environment includes applying a fluid having a single input pressure to a pressure differentiation device having first and second pressure control fittings for providing first and second differing pressure outputs in accordance with the single input pressure and transmitting the fluid at the first and second differing pressures from the pressure differentiation device to the internal passageways. The internal passageways are reprocessed with the transmitted fluid at the first and second differing pressures, whereby the internal passageways are reprocessed at differing pressures in accordance with the single input pressure.

Abstract: A method of cleaning surfaces using a mixed phase cleaning mixture of an aqueous solution and a flow of gas sufficient to produce droplets of the liquid which are entrained by the gas for a time sufficient to clean tubing of various lengths and geometries and porous membranes to remove biofilm, debris and contaminants.

Abstract: A method for the reprocessing of a device having internal passageways by applying a fluid at a plurality of pressures to the internal passageways of the device to permit reuse of the device in a clean environment includes applying a fluid having a single input pressure to a pressure differentiation device having first and second pressure control fittings for providing first and second differing pressure outputs in accordance with the single input pressure and transmitting the fluid at the first and second differing pressures from the pressure differentiation device to the internal passageways. The internal passageways are reprocessed with the transmitted fluid at the first and second differing pressures, whereby the internal passageways are reprocessed at differing pressures in accordance with the single input pressure.

Abstract: A method of operating a substrate processing chamber. In one embodiment the method includes processing one or more substrates in the substrate processing chamber and subsequently cleaning the chamber using a dry cleaning process. This substrate processing and dry cleaning sequence is then repeated multiple times before chamber is further cleaned by flowing a cleaning gas into the chamber and forming a plasma within the chamber from the cleaning gas in an extended cleaning process. During the extended cleaning process the plasma is maintained within the chamber for a total of at least 5 minutes before the chamber is reused to process a substrate.

Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

Abstract: On-Line and Off-Line methods of simultaneously cleaning and disinfecting an industrial water system are described and claimed. The methods involve the addition to the water of the industrial water system of a Compound selected from the group consisting of the alkali salts of chlorite and chlorate and mixtures thereof; and an acid, followed by allowing the water in the industrial water system to circulate for several hours. The reaction of the alkali salts of chlorite and chlorate and acid produces chlorine dioxide in-situ in the water of the industrial water system. The chlorine dioxide kills microorganisms and the acid acts to remove deposits upon the water-contact surfaces of the equipment. An alternative method involves the use of a chelating agent and a biocide. Other possible cleaning and disinfection reagents may be added as needed including corrosion inhibitors, chelating agents, biocides, surfactants and reducing agents.

Abstract: A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.

Abstract: This invention provides fluid-dispensing devices attachable to an air-intake system of an internal combustion engine for introducing an engine cleaner composition into the air intake system. The invention also provides methods of cleaning internal combustion engines using the fluid-dispensing devices.

Abstract: The present invention relates to a device (1) for cleaning a liquid-containing vessel. More particularly, the present invention relates to a device (1), suitable for cleaning liquid-containing vessels (such as bathtubs or swimming pools), equipped with an energy storage means, wherein said device (1) is a static device and uses a liquid present in said vessel as rinse-liquid.

Abstract: A thermal energy system including a heat exchanger for transferring thermal energy between a source and a load, the heat exchanger having a primary side associated with the source, and a secondary side for conducting a fluid associated with the load, wherein the secondary side of the heat exchanger is passively back-flushed upon consumption of a portion of the fluid. Passive back-flushing prevents fouling of the heat exchanger due to sediments, scale, and mineral deposits which may be present in the circulating fluid.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: The invention is directed to a mehtod of cleaning an object in a controlled environment processing chamber into which solvents, water and/or gases are introduced. The process includes first applying a negative gauge pressure to the chamber to non-condensable gases and then introducing a solvent, solvent mixture, water or gas in either a liquid or vapor state to remove soluble contaminants from the surface of an object being processed in the chamber. Further steps recover residual solvent or solution from the object and chamber. A secondary cleaning step directs a vapor state fluid at high velocity at a solid surface of the object to remove insoluble material left behind after the pretreatment step. A final series of steps recovers any loose impediments or residual liquid or vapor from the chamber and returns the chamber to atmospheric pressure for removal of the cleaned object.

Abstract: A method of cleaning and maintenance used for a rotational etching tool, combining the physical characteristics of water (splashed off after striking the surface of a spinning wafer) and a PM (preventive maintenance) computer program, can automatically and quickly clean the interior of the etching tool. By setting the appropriate parameters of PM program, single or all of process chambers can be well cleaned. Also, the DI water dropping positions on the wafer can be altered to create more splashing angles. To clean the sidewalls of the etching chambers, the wafer supporting means is moved between the process chamber and the rotating speed thereof is preferably alter while it is moving. The PM program of the present invention can be executed whenever the cleaning job needs to be done. It not only is timesaving and easy to apply, but also keeps the wafer in a almost-no-particle environment while being etched.

Abstract: A device is disclosed for cleaning dental trays at least partly filled with a moulding material. The device has a container, a pump for placing a cleaning liquid under pressure, and a spray nozzle for spraying the pressurized cleaning liquid into the container. A method is also disclosed for cleaning dental trays at least partly filled with a moulding material.

Abstract: A method of removing residue from a substrate processing chamber. In one embodiment the method comprises flowing an inert gas into a remote plasma chamber and forming a plasma within the chamber; maintaining the plasma while creating a plurality of reactive fluorine species by flowing a fluorine-containing gas into the remote plasma chamber and increasing a flow rate of a fluorine-containing gas from a first flow rate to a second flow rate higher than the first flow rate; and introducing the plurality of reactive fluorine species into the substrate processing chamber.

Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

Abstract: A method of sampling contaminants of a semiconductor wafer carrier. The method includes placing a tool chamber in a clean room and then placing and fixing the semiconductor wafer carrier with its opening facing downward inside the tool chamber. Then the method includes using at least one nozzle to spray extraction fluid uniformly on the inner surfaces of the semiconductor wafer carrier and collecting the extraction fluid.

Abstract: Provided herein is a method for cleaning a process chamber by employing high power density light beam(s) to assist dissociating cleaning gaseous species at the cleaning site. Also provided herein is a method for cleaning the process chamber with laser ablation, wherein no cleaning gas is necessary.

Abstract: A high-speed object washer may be provided for receiving a plurality of objects at an entrance portion, engaging a retention turntable and progressing into a cover. While traveling in the cover in a rotary direction, various cleaning operations may be performed to the object in order to remove various contaminates. After traveling in the rotary direction under the cover, the object may egress from the object washer at an exit portion. The object egresses from the exit portion clean and contaminate-free.

Abstract: A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer an which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipers The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.

Abstract: A cleaning method for cleaning a developer container includes a step of blowing air through an opening formed in the developer container at a first flow rate; a step of sucking air through the opening at a second flow rate which is larger than the first flow rate; wherein while the blowing and suction steps are being simultaneously carried out, ambient air is permitted to enter the developer container through an ambient air inlet.