Abstract: A method of improving the thermoelectric figure of merit (ZT) of a high-efficiency thermoelectric material is disclosed. The method includes the addition of fullerene (C60) clusters between the crystal grains of the material. It has been found that the lattice thermal conductivity (?L) of a thermoelectric material decreases with increasing fullerene concentration, due to enhanced phonon-large defect scattering. The resulting power factor (S2/?) decrease of the material is offset by the lattice thermal conductivity reduction, leading to enhanced ZT values at temperatures of between 350 degrees K and 700 degrees K.

Abstract: Thermoelectric conversion materials, expressed by the following formula: Bi1-xMxCuwOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Ti, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0?x<1, 0<w?1, 0.2<a<4, 0?y<4, 0.2<b<4 and 0?z<4. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

Abstract: A thermoelectric device, a method for fabricating a thermoelectric device and electrode materials applied to the thermoelectric device are provided according to the present invention. The present invention is characterized in arranging thermoelectric material power, interlayer materials and electrode materials in advance according to the structure of thermoelectric device; adopting one-step sintering method to make a process of forming bulked thermoelectric materials and a process of combining with electrodes on the devices to be completed simultaneously; and obtaining a ? shape thermoelectric device finally. Electrode materials related to the present invention comprise binary or ternary alloys or composite materials, which comprise at least a first metal selected from Cu, Ag, Al or Au, and a second metal selected from Mo, W, Zr, Ta, Cr, Nb, V or Ti.

Abstract: A thermoelectric material including a body centered cubic filled skutterudite having the formula AxFeyNizSb12, where A is an alkaline earth element, x is no more than approximately 1.0, and the sum of y and z is approximately equal to 4.0. The alkaline earth element includes guest atoms selected from the group consisting of Be, Mb, Ca, Sr, Ba, Ra and combinations thereof. The filled skutterudite is shown to have properties suitable for a wide variety of thermoelectric applications.

Abstract: Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi1-xCu1-yO1-zTe, where 0?x<1, 0?y<1, 0?z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Abstract: n-type and p-type thermoelectric materials having high figures of merit are herein disclosed. The n-type and p-type thermoelectric materials are used to generate and harvest energy in thermoelectric power generator and storage modules comprising at least one n-type thermoelectric element coupled to at least one p-type thermoelectric element.

Abstract: Disclosed is a thermoelectric material which is represented by the following composition formula (1) or (2) and comprises as a major phase an MgAgAs type crystal structure: (Tia1Zrb1Hfc1)xNiySn100-x-y??composition formula (1); (Lnd(Tia2Zrb2Hfc2)1-d)xNiySn100-x-y??composition formula (2); (wherein a1, b1, c1, x and y satisfy the conditions of: 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x?35 and 30?y?35, and Ln is at least one element selected from the group consisting of Y and rare earth elements, and a2, b2, c2 and d satisfy the conditions of: 0?a2?1, 0?b2?1, 0?c2?1, a2+b2+c2=1 and 0<d?0.3).

Abstract: The present invention provides a multi-layered thermoelectric device and a method of manufacturing the same. The method for manufacturing a multi-layered thermoelectric device includes the steps of: forming a P-type semiconductor and an N-type semiconductor in a sheet type by mixing thermoelectric semiconductor materials at a preset component ratio; cutting the sheets according to a preset specification of the thermoelectric device; stacking sheets which are made by mixing the thermoelectric semiconductor materials at a preset component ratio and are cut into the same size for each of them; and forming a final thermoelectric device by compressing the stacked sheets. By using the method, scattering phenomenon due to a short wavelength of phonon occurs at a boundary of each layer, which results in active scattering of phonon. Therefore, it is possible to expect an effect of improving a thermoelectric figure of merit of a thermoelectric device.

Abstract: A thermally stable diffusion barrier for bonding skutterudite-based materials with metal contacts is disclosed. The diffusion barrier may be employed to inhibit solid-state diffusion between the metal contacts, e.g. titanium (Ti), nickel (Ni), copper (Cu), palladium (Pd) or other suitable metal electrical contacts, and a skutterudite thermoelectric material including a diffusible element, such as antimony (Sb), phosphorous (P) or arsenic (As), e.g. n-type CoSb3 or p-type CeFe4?xCoxSb12 where the diffusible element is Sb, to slow degradation of the mechanical and electrical characteristics of the device. The diffusion barrier may be employed to bond metal contacts to thermoelectric materials for various power generation applications operating at high temperatures (e.g. 673 K or above). Some exemplary diffusion barrier materials have been identified such as zirconium (Zr), hafnium (Hf), and yttrium (Y).

Abstract: The present invention provides a thermoelectric conversion material composed of an oxide material represented by chemical formula A0.8-1.2Ta2O6-y, where A is calcium (Ca) alone or calcium (Ca) and at least one selected from magnesium (Mg), strontium (Sr), and barium (Ba), and y is larger than 0 but does not exceed 0.5 (0<y?0.5).

Abstract: Disclosed is a thermoelectric material which is represented by the following composition formula (1) or (2) and comprises as a major phase an MgAgAs type crystal structure: (Tia1Zrb1Hfc1)xNiySn100-x-y??composition formula (1); (Lnd(Tia2Zrb2Hfc2)1-d)xNiySn100-x-y??composition formula (2); (wherein a1, b1, c1, x and y satisfy the conditions of: 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x?35 and 30?y?35, and Ln is at least one element selected from the group consisting of Y and rare earth elements, and a2, b2, c2 and d satisfy the conditions of: 0?a2?1, 0?b2?1, 0?c2?1, a2+b2+c2=1 and 0<d?0.3).

Abstract: In order to achieve a thermoelectric transducer exhibiting a higher conversion efficiency and an electronic apparatus including such a thermoelectric transducer, a thermoelectric conversion device is provided, including a semiconductor stacked structure including semiconductor layers stacked with each other, the semiconductor layers being made from different semiconductor materials, in which a material and a composition of each semiconductor layer in the semiconductor stacked structure are selected so as to avoid conduction-band or valence-band discontinuity.

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: Disclosed is a new compound semiconductor represented by the chemical formula: Bi1-x-yLnxMyCuOTe where Ln belongs to the lanthanoid series and is any one or more elements selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, M is any one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, and 0<x<1, 0?y?1 and 0<x+y<1. The compound semiconductor can replace a conventional compound semiconductor or be used as a thermoelectric conversion device together with a conventional compound semiconductor.

Abstract: A thermoelectric structure for cooling an integrated circuit (IC) chip comprises a first type superlattice layer formed on top of the IC chip connected to a first voltage, and a second type superlattice layer formed on the bottom of the IC chip connected to a second voltage, the second voltage being different from the first voltage, wherein an power supply current flows through the first and second type superlattice layer for cooling the IC chip.

Abstract: This invention pertains generally to compositions and a method for making films, nanostructures and nanowires in templates and on substrates, including but not limited to metal-semiconductor nanostructures and semiconductor nanostructures on semiconductor substrates, and a device having the same. Particularly described are methods for making cobalt antimonide nanostructures on gold and Co—Sb substrates.

Abstract: A thermoelectric material of the p-type having the stoichiometric formula Zn4Sb3, wherein part of the Zn atoms optionally being substituted by one or more elements selected from the group comprising Sn, Mg, Pb and the transition metals in a total amount of 20 mol % or less in relation to the Zn atoms is provided by a process involving zone-melting of a an arrangement comprising an interphase between a “stoichiometric” material having the desired composition and a “non-stoichiometric” material having a composition deviating from the desired composition. The thermoelectric materials obtained exhibit excellent figure of merits.

Abstract: The thermoelectric device of the present invention includes a first electrode and a second electrode that are disposed to be opposed to each other, and a laminate that is interposed between the first electrode and the second electrode, is connected electrically to both the first electrode and the second electrode, and is layered in the direction orthogonal to an electromotive-force extracting direction, which is the direction in which the first electrode and the second electrode are opposed to each other.

Abstract: A process for the fabrication of high efficiency thermoelectric materials using non-equilibrium synthesis routes is described. In one embodiment a molten alloy comprising a predetermined ratio of elements which will constitute the thermoelectric material is quenched at a cooling rate in excess of, for example, 105 or 106 K/s using a process such as melt spinning. The rapidly solidified particles are then placed into a mold having the desired size and shape. The particles in the mold are simultaneously compressed and sintered at elevated temperatures for a short duration using, for example, hot pressing or spark plasma sintering. The overall process provides improved microstructural control and greatly expands the accessible phase space, permitting the formation of dense, single-phase structures with nanosized grain boundaries and minimal or no impurity segregation.

Abstract: A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

Abstract: A thermoelectric material has a composition expressed by (Fe1-pVp)100-x(Al1-qSiq)x (0.35?p?0.7, 0.01?q?0.7, 20?x?30 atomic %). The thermoelectric material includes a crystal phase having an L21 structure or a crystal phase having a B2 structure as a main phase.

Abstract: A thermoelectric material, which has a superior thermoelectric characteristic and is environment-friendly and is suitable for mass productivity due to the lower cost, is provided. The thermoelectric material is an iron alloy that mainly contains Fe, V and Al and that carbides are dispersed into the matrix, wherein [V concentration?C concentration] is 20 or more at % to 32 or less at % and [Al concentration+Si concentration] is 20 or more at % to 30 or less at %. Especially in the thermoelectric material of the present invention, a high Seebeck coefficient can be kept and a lower electrical resistivity can be obtained, thereby improving an output factor and achieving a superior thermoelectric characteristic.

Abstract: An improved method and apparatus for thermal-to-electric conversion involving relatively hot and cold juxtaposed surfaces separated by a small vacuum gap wherein the cold surface provides an array of single charge carrier converter elements along the surface and the hot surface transfers excitation energy to the opposing cold surface across the gap through Coulomb electrostatic coupling interaction.

Abstract: The invention disclosed herein relates to thermoelectrically-active p-type Zintl phase materials as well as devices utilizing such compounds. Such thermoelectric materials and devices may be used to convert thermal energy into electrical energy, or use electrical energy to produce heat or refrigeration. Embodiments of the invention relate to p-type thermoelectric materials related to the compound Yb14MnSb11.

Abstract: A thermoelectric material has a composition expressed by (TipHfqZr1-p-q)xCoy(Sb1-rSnr)100-x-y (0.1<p?0.3, 0.1<q?0.3, 0.1<r?0.8, 30?x?35 atomic %, and 30?y?35 atomic %), and includes a phase having an MgAgAs crystal structure as a main phase.

Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Abstract: A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance.

Abstract: A thermoelectric device may include a thermoelectric element including a layer of a thermoelectric material and having opposing first and second surfaces. A first metal pad may be provided on the first surface of the thermoelectric element, and a second metal pad may be provided on the second surface of the thermoelectric element. In addition, the first and second metal pads may be off-set in a direction parallel with respect to the first and second surfaces of the thermoelectric element. Related methods are also discussed.

Abstract: New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants.

Abstract: A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

Abstract: The invention provides a novel n-type thermoelectric conversion material which comprises low-toxic and abundant elements, and has excellent heat-resistance, chemical durability and the like, as well as high thermoelectric conversion efficiency, the thermoelectric conversion material comprises a metal oxynitride thermoelectric conversion material which has a composition represented by formula Ti1-xAxOyNz (wherein A is at least one element selected from the group consisting of transition metals of the 4th and 5th periods of the periodic table, and 0?x?0.5, 0.5?y?2.0, 0.01?z?0.6), and has an absolute value of thermoelectric power of at least 30 ?V/K at 500° C. or above, and a novel n-type thermoelectric conversion material, a thermoelectric conversion element and a thermoelectric conversion module comprising the above metal oxynitride can also be provided.

Abstract: A thermoelectric conversion module (10) comprises a first electrode member (13) arranged on a low temperature side, a second electrode member (14) arranged on a high temperature side, and p-type and n-type thermoelectric elements (11 and 12) arranged between and connected electrically with both the first and second electrode members (13 and 14). The thermoelectric elements (11 and 12) are composed of a thermoelectric material (half-Heusler material) containing an intermetallic compound having an MgAgAs crystal structure as a main phase and have a fracture toughness value K1C of not less than 1.3 MPa·m1/2 and less than 10 MPa·m1/2.

Abstract: A thermoelectric film is disclosed. The thermoelectric film includes a substrate that is substantially electrically non-conductive and flexible and a thermoelectric material that is deposited on at least one surface of the substrate. The thermoelectric film also includes multiple cracks oriented in a predetermined direction.

Abstract: A thermoelectric conversion material is provided that has not only a higher thermoelectric performance as compared to conventional ones but also semiconducting temperature dependence, i.e. properties that the electrical resistivity decreases with an increase in temperature. The thermoelectric conversion material contains a substance having a layered bronze structure represented by a formula (Bi2A2O4)0.5(Co1-xRhx)O2, where A is an alkaline-earth metal element and x is a numerical value of 0.4 to 0.8. The thermoelectric conversion material of the present invention exhibits good thermoelectric properties over a wide temperature range.

Abstract: The present invention provides a thermoelectric material useful for a thermoelectric converter having excellent energy conversion efficiency, and a method for producing the thermoelectric material. The thermoelectric material comprising an oxide containing Ti, M, and O and the oxide is represented by Formula (1). Ti1-xMxOy??(1) M represents at least one selected from the group consisting of V, Nb, and Ta, x is not less than 0.05 and not more than 0.5, and y is not less than 1.90 and not more than 2.02.

Abstract: A thermoelectric material includes a composition represented by the following formula (A): (Tia1Zrb1Hfc1)xNiySn100-x-y??(A) where 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x?35, and 30?y?35. The composition includes at least two MgAgAs crystal phases different in a lattice constant, and, assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be I1 and I2, respectively, a value of I1/(I1+I2) is in a range of 0.2 to 0.8.

Abstract: The invention relates to the use of a thermoelectric material for thermoelectric purposes at a temperature of 150 K or less, said thermoelectric material is a material corresponding to the stoichiometric formula FeSb2, wherein all or part of the Fe atoms optionally being substituted by one or more elements selected from the group comprising: Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Tr, Pt, Au, Hg, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and a vacancy; and wherein all or part of the Sb atoms optionally being substituted by one or more elements selected from the group comprising: P, As, Bi, S, Se, Te, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb and a vacancy; with the proviso that neither one of the elements Fe and Sb in the formula FeSb2 is fully substituted with a vacancy, characterised in that said thermoelectric material exhibits a power factor (S2?) of 25 ?W/cmK2 or more at a temperature of 150 K or less.

Abstract: The present invention provides an electrically conductive paste for connecting thermoelectric materials, the paste comprising a specific powdery oxide and at least one powdery electrically conductive metal selected from the group consisting of gold, silver, platinum, and alloys containing at least one of these metals. By connecting a thermoelectric material to an electrically conductive substrate with the electrically conductive paste of the invention, a suitable electroconductivity is imparted to the connecting portion of the thermoelectric element. Further, the thermal expansion coefficient of the connecting portion can be made close to that of the thermoelectric material. Therefore, even when high-temperature power generation is repeated, separation at the connecting portion is prevented and a favorable thermoelectric performance can be maintained.

Abstract: The invention disclosed herein relates to thermoelectrically-active p-type Zintl phase materials as well as devices utilizing such compounds. Such thermoelectric materials and devices may be used to convert thermal energy into electrical energy, or use electrical energy to produce heat or refrigeration. Embodiments of the invention relate to p-type thermoelectric materials related to the compound Yb14MnSb11.

Abstract: The present invention provides an indium-doped Co4Sb12 skutterudite composition in which some Co on the cubic lattice structure may be replaced with one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; some Sb on the planar rings may be replaced by one or more members of the group consisting of Si, Ga, Ge and Sn; and a second dopant atom is selected from a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The composition is useful as a thermoelectric material. In preferred embodiments, the composition has a figure of merit greater than 1.0. The present invention also provides a process for the production of the composition, and thermoelectric devices using the composition.

Abstract: Disclosed herein is a thermoelectric material for intermediate- and low-temperature applications, in which any one or a mixture of two or more selected from among La, Sc and MM is added to a Ag-containing metallic thermoelectric material or semiconductor thermoelectric material. The thermoelectric material has a low thermal diffusivity, a high Seebeck coefficient, a low specific resistivity, a high power factor and a low thermal conductivity, and thus has a high dimensionless figure of merit, thus showing very excellent thermoelectric properties. The thermoelectric material provide thermoelectric sensors having high sensitivity and low noise and, in addition, is widely used as a thermoelectric material for intermediate- and low-temperature applications, because it shows excellent thermoelectric performance in the intermediate- and low-temperature range.

Abstract: A thermoelectric material includes a filled skutterudite crystal structure having the formula GyM4X12, where i) G includes at least two rare earth elements and an alkaline earth element, ii) M is cobalt, rhodium, or iridium, and iii) X is antimony, phosphorus, or arsenic. The subscript “y” refers to a crystal structure filling fraction ranging from about 0.001 to about 0.5.

Abstract: A thermoelectric conversion material is provided which stably exhibits high thermoelectric conversion performance at about 300 to 600° C. and has high physical strength, resistance to weathering, durability, stability, and reliability. A method for manufacturing the same, and a thermoelectric conversion element are also provided. Also provided is a thermoelectric conversion material produced using, as a raw material, silicon sludge which has had to be disposed of in landfill. The thermoelectric conversion material of the invention is characterized by containing, as a main component, a sintered body composed of polycrystalline magnesium silicide containing at least one element selected from As, Sb, P, Al, and B. The manufacturing method uses purified and refined silicon sludge.

Abstract: Disclosed is a thermoelectric material comprising a main phase which is represented by the following composition formula and having an MgAgAs-type crystalline structure: (Ta1Zrb1Hfc1)xCoySb100-x-y wherein 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x ?35, and 30?y?35.

Abstract: The present invention provides a thermoelectric element in which a thin film of p-type thermoelectric material and a thin film of n-type thermoelectric material, which are formed on an electrically insulating substrate, are electrically connected, in which the p-type thermoelectric material and the n-type thermoelectric material are selected from specific complex oxides with a positive Seebeck coefficient and specific complex oxides with a negative Seebeck coefficient, respectively. The present invention also provides a thermoelectric module using the thermoelectric element(s) and a thermoelectric conversion method. In the thermoelectric element of the present invention, since a p-type thermoelectric material and an n-type thermoelectric material are formed into a thin film on an electrically insulating substrate, the thermoelectric element of the invention can be formed on substrates having various shapes, thereby providing thermoelectric elements having various shapes.

Abstract: The invention provides a power generation method using a thermoelectric element, a thermoelectric element, and a thermoelectric device that excel in thermoelectric performance and are applicable to a wider range of applications over conventional counterparts. The element includes a first electrode and a second electrode that are disposed to oppose each other, and a laminate interposed between the first and second electrodes and electrically connected to both of the electrodes. The laminate has a structure in which a Bi layer and a metal layer made of a metal other than Bi are alternately layered, and the Bi layer and the metal layer having layer surfaces that are slanted with respect to a direction in which the first and second electrodes oppose each other. The element generates a potential difference between the electrodes by a temperature difference created along a direction perpendicular to the opposing direction of the first and second electrodes in the element.

Abstract: A thermoelectric material of the p-type having the stoichiometric formula Zn4Sb3, wherein part of the Zn atoms optionally being substituted by one or more elements selected from the group comprising Sn, Mg, Pb and the transition metals in a total amount of 20 mol % or less in relation to the Zn atoms is provided by a process involving zone-melting of a an arrangement comprising an interphase between a “stoichiometric” material having the desired composition and a “non-stoichiometric” material having a composition deviating from the desired composition. The thermoelectric materials obtained exhibit excellent figure of merits.

Abstract: A thermoelectric device includes a plurality of thermoelectric elements coupled between a first plate and a second plate. The plurality of thermoelectric elements are electrically interconnected with one another by a plurality of electrical interconnects and the plurality of thermoelectric elements include at least one thermoelectric element comprising a material having the formula AxByCz, where A is one or more components selected from the group consisting of group II cations and mixtures thereof, B is one or more components selected from the group consisting of group I cations and mixtures thereof, and C is one or more components selected from the group consisting of group V anions and mixtures thereof, and x, y, and z are molar ratios.

Abstract: A thermoelectric generation device is configured for mounting on cooling tubes of a heat exchanger of a computer room air conditioning unit in a data center. A first type of Seebeck material and a second type of Seebeck material are arranged in a matrix and connected in series. An electrically insulating, but thermally conducting plate is located on either side of the device. The device is mounted physically on cooling tubes of the heat exchanger and exposed on the other side to the warm air environment. As a result of the temperature difference a voltage is generated that may be used to power an electrical load connected thereto.

Abstract: An improved design for maintaining nanometer separation between electrodes in tunneling, thermo-tunneling, diode, thermionic, thermoelectric, thermo-photovoltaic and other devices is disclosed. At least one electrode is of a curved shape. All embodiments reduce the thermal conduction between the two electrodes when compared to the prior art. Some embodiments provide a large tunneling area surrounding a small contact area. Other embodiments remove the contact area completely. The end result is an electronic device that maintains two closely spaced parallel electrodes in stable equilibrium with a nanometer gap there-between over a large area in a simple configuration for simplified manufacturability and use to convert heat to electricity or electricity to cooling.