Abstract: An organic semiconductor mixture and an organic optoelectronic device containing the same are provided. A n-type organic semiconductor compound in the organic semiconductor mixture has a novel chemical structure so that the mixture has good thermal stability and property difference during batch production is also minimized. The organic semiconductor mixture is applied to organic optoelectronic devices such as organic photovoltaic devices for providing good energy conversion efficiency while in use.

Abstract: A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles.

Abstract: A device, comprising: a flexible carrier; a release layer that is formed on the flexible carrier; a releasable substrate formed over the release layer; and a semiconductor structure that is formed over the releasable substrate.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, wherein the interlayer includes i) a hole transport region between the first electrode and the emission layer, and ii) an electron transport region between the emission layer and the second electrode, and the hole transport region includes a Group 11 metal chalcogenide compound including a Group 11 metal and a chalcogenide element with the proviso that oxygen is excluded from the chalcogenide element.

Abstract: The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device.

Abstract: A method of fabricating a multi-junction photosensitive device is provided. The method may include fabricating at least two photoactive layers, wherein at least one photoactive layer is fabricated on a transparent substrate, and at least one photoactive layer is fabricated on a reflective substrate, patterning at least one optical filter layer on at least one photoactive layer fabricated on a transparent substrate, and bonding the at least two photoactive layers using cold weld or van der Waals bonding. A multi-junction photosensitive device is also provided. The device may have at least two photoactive layers, and at least one optical filter layer, wherein at least two layers are bonded using cold weld or van der Waals bonding. The optical filter layer may be a Distributed Bragg Reflector.

Abstract: A perovskite-polymer composite comprising a perovskite and a polymer, wherein the polymer has a structural unit comprising a thiourea (—HN(C?S)NH—) fragment and a (—R1—O—R2—) fragment, wherein R1 and R2 are each independently a C1-C6 alkyl or a cycloalkyl linker; a mechanically robust and self-healable solar cell comprising same; and a method of making same.

Abstract: An electrochromic compound has a structure represented by the following general formula (1): where each of X1 to X3 independently represents a carbon atom or a silicon atom, and each of R1 to R15 independently represents a member selected from a hydrogen atom, a halogen atom, a monovalent organic group, and a polymerizable functional group.

Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

Abstract: The invention relates to methods for producing a light-absorbing material with a perovskite-like structure, and can be used to form a light-absorbing layer in the production of photovoltaic cells for saving the materials and increasing the allowable size of converters. These advantages are achieved by forming a uniform layer of component B on the substrate, preparing a mixture of reagents that react with component B under predetermined conditions, and a reaction inhibitor that suppresses this reaction under these conditions; the prepared mixture is applied in stoichiometric amount or greater than stoichiometric on the layer of component B and the reaction inhibitor is removed from the mixture, ensuring activation of the chemical reaction between the mixture of reagents and component B to form films of perovskite-like material.

Abstract: The present invention relates to a novel cathode buffer layer material, and an organic or organic/inorganic hybrid photoelectric device comprising same, and, if a novel compound of the present invention is applied to a cathode buffer layer of an organic photoelectric device such as organic solar cells, organic photodiode, colloidal quantum dot solar cell, and perovskite solar cell, a surface property of an electron transfer layer is improved via a high dipole moment of the novel compound, an electron can be easily extracted from a photoactive layer to a cathode electrode, and series resistance and leakage current can be reduced, thereby having a useful industrial effect, as performance of the organic or organic/inorganic hybrid photoelectric device being manufactured, such as an organic solar cell, organic photodiode, colloidal quantum dot solar cell, and perovskite solar cell, can be significantly improved.

Abstract: The present invention relates to a method for laminating solar cell modules comprising a plurality of solar cells electrically connected in series.

Abstract: The invention provides for polymer structures and their preparation and resulting novel functionalities including open-shell character and high intrinsic conductivity with wide-range tenability. Electrical conductivity can be further modulated by introducing or blending with materials, fillers, dopants, and/or additives. The materials or resultant composites of the invention can be processed by various techniques into different forms to realize multiple applications.

Abstract: The present disclosure relates to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis.

Abstract: The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX3 and a second layer that includes a perovskite-like material defined by at least one of A?2B?X?4, A?3B?2X?9, A?B?X?4, A?2B?X?6, and/or A?2AB?2X?7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A? is a third cation, B? is a fourth cation, X? is a second anion, and A? is different than A.

Abstract: Organic photoelectric device comprises a first electrode, a first carrier transfer layer, an active layer, a second carrier transfer layer and a second electrode. The first electrode is a transparent electrode. The active layer includes at least one organic semiconductor material including a structure such as Formula I: The second carrier transfer layer is composed between the active layer and the second electrode. When X1 and X2 are selected from one of Si, Ge and derivatives thereof, the active layer further includes an organic solvent, and the solubility of the organic solvent to the active layer is not less than 5 mg/mL. When X1 and X2 are selected from one of C and its derivatives, the active layer further includes an additive. The power conversion efficiency of the organic photoelectric device of the present invention can be up to more than 14%.

Abstract: The present application relates to a compound of Chemical Formula 1 and an organic light emitting device including the same.

Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a first electron transport layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, the photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion, and the first electron transport layer contains a niobium oxide halide.

Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same. Definitions of Chemical Formula 1 are the same as defined in the detailed description.

Abstract: A flexible display device that can conform to complex curved surfaces, and methods for manufacturing said display device, are disclosed herein. The display device utilizes a Miura-ori origami structure that, in a folded or at least partially folded configuration, is able to conform to complex curved surfaces. The Miura-ori structure involves folding a two-dimensional substrate in accordance with crease lines comprising a tessellation of parallelograms. Each cell of the tessellation pattern can include one or more luminous elements (LEDs, OLEDs, etc.) bonded to circuit elements embedded within the flexible substrate (e.g., Parylene-C).

Abstract: The flexible dye-sensitized solar panel with an organic chromophore is formed from an organic chromophore dye in a polymer matrix. The organic chromophore dye is extracted from chard (B. vulgaris subsp. cicla). The polymer matrix may be formed from either poly(vinyl alcohol) or polystyrene. The flexible dye-sensitized solar panel with an organic chromophore is made by preparing a solution of the selected polymer in the dye extracted from the B. vulgaris subsp. cicla. The solution is coated on a glass plate and dried to form a thin film. The thin flexible film is removed from the plate, forming the flexible dye-sensitized solar panel with an organic chromophore.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

Abstract: An organometallic compound and an organic light-emitting device including the same are provided. The organometallic compound is represented by Formula 1: M(LA)n1(LB)n2.

Abstract: Provided is a solar cell module including photoelectric conversion elements, wherein each of the photoelectric conversion elements includes a first substrate, and a first electrode, a hole blocking layer, an electron transport layer, a hole transport layer, a second electrode, and a second substrate on the first substrate, and a sealing member between the first substrate and the second substrate, and wherein, within at least two of the photoelectric conversion elements adjacent to each other, the hole-blocking layers are not extended to each other but the hole transport layers are in a state of a continuous layer where the hole transport layers are extended to each other.

Abstract: A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

Abstract: A method is provided that integrates an autonomous energy harvesting capacity in a mobile device in an aesthetically neutral manner. A unique set of structural features combine to implement a hidden energy harvesting system on a surface of the mobile device body structure or casing to provide electrical power to the mobile device, and/or to individually electrically-powered components in the mobile device. Color-matched, image-matched and/or texture-matched optical layers are formed over energy harvesting components, including photovoltaic energy collecting components. Optical layers are tuned to scatter selectable wavelengths of electromagnetic energy back in an incident direction while allowing remaining wavelengths of electromagnetic energy to pass through the layers to the energy collecting components below. The layers appear opaque when observed from a light incident side, while allowing at least 50%, and as much as 80+%, of the energy impinging on the energy or incident side to pass through the layer.

Abstract: Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.

Abstract: There is provided a multi junction photovoltaic device comprising a first sub-cell comprising a photoactive region comprising a layer of perovskite material, a second sub-cell comprising a photoactive silicon absorber. and an intermediate region disposed between and connecting the first sub-cell and the second sub-cell. The intermediate region comprises an interconnect layer, the interconnect layer comprising a two-phase material comprising elongate (i.e. filament like) silicon nanocrystals embedded in a silicon oxide matrix.

Abstract: A system can comprise a first window pane configured at a first position in a semitransparent and uniform structure. The system can also include a first substrate configured with a first transparent conductive oxide (TCO) contact layer, a hole transport (HTL) layer and a first perovskite layer, wherein the first TCO contact layer, the HTL layer, and first perovskite layer are positioned at a set distance away from the first window pane in the semitransparent and uniform structure. The HTL layer includes oxides, or iodides, or organic materials. Further, the system can include a second substrate directly opposite to the first substrate, and configured with a second TCO contact layer, an electron transport (ETL) layer, and a second perovskite layer, wherein the first perovskite layer and the second perovskite layer are fused together in the semitransparent and uniform structure. The ETL layer includes oxides or organic materials.

Abstract: The invention provides a titanium carbide nanosheet/layered indium sulfide heterojunction and an application of the same in degrading and removing water pollutants. A simple electrostatic self-assembly method is used to uniformly absorb indium ions on the surfaces of Ti3C2 nanosheets, which effectively inhibits the stacking of the nanosheets and is beneficial to the uniform growth of In2S3 nanosheets on the surfaces of the Ti3C2. The present invent overcomes two disadvantages of too fast photogenerated carrier recombination rate of In2S3 and easy agglomeration of nano-scale In2S3, and effectively improves the separation efficiency and photocatalytic activity of photogenerated electron-hole of In2S3.

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

Abstract: Disclosed are capacitors containing surface active ionic liquids, and methods of use. The capacitors have high capacitance and function over broad ranges of temperature, and are particularly appropriate for high-temperature (˜200° C.) applications.

Abstract: A solid-liquid-solid phase transformation (SLSPT) approach is used for fabrication of perovskite periodic nanostructures. The pattern on a mold is replicated by perovskite through phase change of perovskite from initially solid state, then to liquid state, and finally to solid state. The LED comprising perovskite periodic nanostructure shows better performance than that with flat perovskite. Further, the perovskite periodic nanostructure from SLSPT can be applied in many optoelectronic devices, such as solar cells, light emitting diodes (LED), laser diodes, transistors, and photodetectors.

Abstract: The present invention aims to provide a solar cell having high durability against deterioration due to moisture ingress from the side surfaces. The solar cell 10 of the present invention includes: first and second electrodes 12 and 17; a perovskite layer 14 provided between the first and second electrodes 12 and 17 and containing an organic-inorganic perovskite compound (A) represented by the formula RMX3 where R is an organic molecule, M is a metal atom, and X is a halogen atom; and a side-surface-protecting layer 15 provided on a peripheral side of the perovskite layer 14 to coat at least part of a side surface of the perovskite layer 14, the side-surface-protecting layer 15 containing at least one selected from the group consisting of a metal halide (B1) and an organometal halide (B2) or containing an organohalide (C).

Abstract: The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF.

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Abstract: The present invention relates to a compound for use in an optoelectronic device including a heterojunction. The heterojunction includes a metal-organic framework optimized for operation as an electron transport layer in an optoelectronic device.

Abstract: The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device.

Abstract: The present disclosure generally relates to organic photosensitive optoelectronic devices and polaron pair recombination dynamics to impact efficiency and open circuit voltages of organic solar cells. The present disclosure also relates, in part, to methods of making organic photosensitive optoelectronic devices comprising the same.

Abstract: The present invention discloses a conjugated polymer, which is a random copolymer, and with Formula I: Additionally, the present invention also discloses an organic photovoltaic device comprising the conjugated polymer.

Abstract: The present invention relates to a solar cell and a method of producing the same. The solar cell comprises a porous light absorbing layer (1), a first porous conducting layer (2), a second conducting layer (3), a porous substrate (4) between the conducting layers, the porous substrate comprises a catalytic conducting portion (4a) in electrical contact with the second conducting layer and an insulating portion (4b) between the first porous conducting layer (2) and the conducting portion, and a conducting medium (5) for transporting charges between the conducting portion (4a) and the light absorbing layer (1). The conducting medium is located in the light absorbing layer (1), the first porous conducting layer (2), and partly the porous substrate (4) so that the insulating portion (4b) and a first part (4a?) of the conducting portion (4a) comprises the conducting medium and a second part (4a?) of the conducting portion is free of conducting medium.

Abstract: A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.

Abstract: A polymer solar cell includes a photoactive layer, a cathode electrode, and an anode electrode. The photoactive layer includes a polymer layer and a carbon nanotube layer. The polymer layer includes a first polymer surface and a second polymer surface opposite to the first polymer surface. A portion of the carbon nanotube layer is embedded in the polymer layer, and another portion of the carbon nanotube layer is exposed from the polymer layer. The cathode electrode is located a surface of the carbon nanotube layer away from the polymer layer. The anode electrode is located on the first polymer surface and spaced apart from the carbon nanotube layer. The entire second polymer surface is exposed.

Abstract: A highly efficient multi junction photovoltaic device, such as a two, three, or four junction device, is disclosed. The multi-junction device may include a first subcell comprising a first photoactive region and a second subcell comprising a second photoactive region. The first and second photoactive regions are designed to minimize spectral overlap and maximize photocurrent across a broad absorption spectra, such as wavelengths ranging from 400 nm to 900 nm. The device may further include an inter-connecting layer, disposed between the first subcell and the second subcell, that is at least substantially transparent. By introducing a transparent interconnecting layer, a dual element (tandem) cell achieves a power conversion efficiency of 10.0±0.5%. By adding an additional (3rd) sub-cell that absorbs at the second order optical interference maximum within the stack. The triple junction cell significantly improves the quantum efficiency at shorter wavelengths, achieving a power conversion efficiency of 11.1±0.

Abstract: A method for detecting infrared electromagnetic radiation and for converting same into an electrical signal, an optoelectronic component, in particular an organic infrared detector for (near) infrared detection, and use thereof for detecting an electromagnetic signal in the wavelength range of 780 nm to 10 ?m, are provided.

Abstract: The present specification provides a copolymer including: a repeating unit derived from a compound represented by Formula 1; a first conjugated monomer; and a second conjugated monomer different from the first conjugated monomer, and an organic solar cell including the same.

Abstract: A photon multiplying material includes a first organic semiconductor, a luminescer and a light harvesting material wherein the light harvesting material has a bandgap which provides that exciton states formed in the light harvesting material by absorbance of light can be energy transferred to the first organic semiconductor and the luminescer has a bandgap which provides that triplet exciton states formed in the first organic semiconductor can be energy transferred into the luminescer; and wherein at least one of the first organic semiconductor and the light harvesting material is capable of singlet fission.

Abstract: A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

Abstract: The invention relates to a blend containing an electron acceptor and an electron donor, the acceptor being an n-type semiconductor which is a small molecule that does not contain a fullerene moiety, the electron donor being a p-type semiconductor which is a conjugated polymer comprising donor and acceptor units in random sequence, to a formulation containing such a blend, to the use of the blend in organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD and OLED devices comprising the blend.