Abstract: A high strength/highly conductive copper alloy plate material of the present invention contains silver in a range of 4% by mass or more and 13% by mass or less, and balancing copper and unavoidable impurities. In the high strength/highly conductive copper alloy plate material, a minimum value of a tensile strength (UTS) is 600 MPa or more and 1250 MPa or less, and a conductivity (% IACS) is 60% or more and 90% or less.

Abstract: An electrolyzed copper foil and a current collector of an energy storage device are provided. The electrolyzed copper foil includes a transition layer and a nano-twin copper layer formed on the transition layer. The transition layer has an equiaxial grain of a (111) plane having a volume ratio of 20-40%, a (200) plane having a volume ratio of 20-40%, and a (220) plane having a volume ratio of 20-40%. A thickness of the transition layer is 0.2 ?m to 1.5 ?m. The nano-twin copper layer has a columnar grain of the (111) plane having a volume ratio of more than 85%, and a thickness of the nano-twin copper layer is 3 ?m to 30 ?m.

Abstract: Method for heat treating magnetic wire includes a wire supply unit, a wire property measuring unit, a wire tensile force measuring unit, a heat treatment unit, and a wire winding unit. The wire supply unit includes a supply bobbin, a supply rotary part, a wire reel, and a tension roller. The wire property measuring unit includes a size measuring device, an after measurement capstan, and a wire reel and measures a size of the wire prior to the heat treatment. The wire tensile force measuring unit includes a tensile force measuring device, a tension roller, and a wire reel. The wire heat treatment unit includes a heat treatment furnace, a temperature measuring device, an after heat treatment capstan, and a wire reel. The wire winding unit includes a winding bobbin, a winding rotary part that rotates the winding bobbin, a tension roller, and a wire reel.

Abstract: A highly bendable insulated electric wire includes a conductor part that has a plurality of non-compressed strands made of a copper alloy, each of the non-compressed strands having a cross-sectional area of 0.13 sq. mm, and a covering part that is provided on the conductor part, wherein the conductor part has an elongation of 7% or more and a tensile strength of 500 MPa or more, and the covering part is made of 100 degree Celsius heat-resistant polyvinyl chloride and has an elongation of 100% or more at a temperature of ?40 degree Celsius.

Abstract: A copper foil composite comprising a copper foil and a resin layer laminated, the copper foil containing at least one selected from the group consisting of Sn, Mn, Cr, Zn, Zr, Mg, Ni, Si and Ag at a total of 30 to 500 mass ppm, a tensile strength of the copper foil having of 100 to 180 MPa, a degree of aggregation I200/I0200 of a (100) plane of the copper foil being 30 or more, and an average grain size viewed from a plate surface of the copper foil being 10 to 400 ?m.

Abstract: A joint structure that includes a first metal member, a second metal member, and a joint portion sandwiched between the first metal member and the second metal member. At least a Cu-M-Sn intermetallic compound is dispersed in the joint portion, M is at least one of Ni and Mn, and neither a Cu3Sn layer nor a Cu6Sn5 layer is present on at least one of interfaces between the joint portion and the first metal member and the second metal member.

Abstract: Cold-worked metal articles, methods of forming cold-worked metal articles, and methods of authenticating cold-worked metal articles are provided. In an embodiment, a cold-worked metal article includes a cold-worked metal-containing surface that defines pores. The cold-worked metal-containing surface includes luminescent phosphor particles disposed within the pores. The luminescent phosphor particles include a host crystal lattice material and at least one active ion that includes an absorbing ion and an emitting ion that is different from the absorbing ion. The luminescent phosphor particles are harder than the cold-worked metal-containing surface.

Abstract: A method of forming a wrought material having a refined grain structure is provided. The method comprises providing a metal alloy material having a depressed solidus temperature and a low temperature eutectic phase transformation. The metal alloy material is molded and rapidly solidified to form a fine grain precursor that has fine grains surrounded by a eutectic phase with fine dendritic arm spacing. The fine grain precursor is plastic deformed at a high strain rate to cause recrystallization without substantial shear banding to form a fine grain structural wrought form. The wrought form is then thermally treated to precipitate the eutectic phase into nanometer sized dispersoids within the fine grains and grain boundaries and to define a thermally treated fine grain structure wrought form having grains finer than the fine grains and the fine dendritic arm spacing of the fine grain precursor.

Abstract: A method of manufacturing a Cu alloy conductor includes the steps of: adding and dissolving In of 0.1-0.7 weight % to a Cu matrix containing oxygen of 0.001-0.1 weight % (10-1000 weight ppm) to form a molten Cu alloy, performing a continuous casting with the molten Cu alloy, rapidly quenching a casting material to a temperature by at least 15° C. or more lower than a melting point of molten Cu alloy, controlling the casting material at a temperature equal to or lower than 900° C., and performing a plurality of hot rolling processes to the casting material such that a temperature of a final hot rolling is within a range of from 500 to 600° C. to form the rolled material.

Abstract: A copper alloy for electronic devices has a low Young's modulus, high proof stress, high electrical conductivity and excellent bending formability and is appropriate for a component for electronic devices including a terminal, a connector, a relay and a lead frame. Also a method of manufacturing a copper alloy utilizes a copper alloy plastic working material for electronic devices, and a component for electronic devices. The copper alloy includes Mg at 3.3 to 6.9 at %, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is X at %, an electrical conductivity ? (% IACS) is in a range of ??{1.7241/(?0.0347×X2+0.6569×X+1.7)}×100, and an average grain size is in a range of 1 ?m-100 ?m. In addition, an average grain size of a copper material after an intermediate heat treatment and before finishing working is in a range of 1 ?m-100 ?m.

Abstract: This copper alloy for electronic devices includes Mg at a content of 3.3 at % or more and 6.9 at % or less, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is given as X at %, an electrical conductivity ? (% IACS) is in a range of ??{1.7241/(?0.0347×X2+0.6569×X+1.7)}×100, and a stress relaxation rate at 150° C. after 1,000 hours is in a range of 50% or less.

Abstract: Disclosed are processes for improving the formability of a copper-nickel-tin alloy having a 0.2% offset yield strength that is above 115 ksi. The alloy includes about 14.5 to about 15.5 wt % nickel, about 7.5 to about 8.5 wt % tin, and the remaining balance is copper. The copper-nickel-tin alloy is mechanically cold worked to undergo between 5% and 15% plastic deformation. The alloy is then heat treated at elevated temperatures of about 450° F. to about 550° F. for a period of about 3 hours to about 5 hours. The alloy is then subsequently mechanically cold worked again to undergo between 4% and 12% plastic deformation. The alloy is then further heated to an elevated temperature of about 700° F. to about 850° F. for a period between about 3 minutes and about 12 minutes to relieve stress. The resulting alloy has a combination of good formability ratio and good yield strength.

Abstract: The present disclosure relates to ultra high strength wrought copper-nickel-tin alloys and processes for improving the yield strength of the copper-nickel-tin alloy such that the resulting 0.2% offset yield strength is at least 175 ksi. The alloy includes about 14.5 wt % to about 15.5% nickel, about 7.5 wt % to about 8.5% tin, and the remaining balance is copper. The steps include cold working the copper-nickel-tin alloy wherein the alloy undergoes between 50%-75% plastic deformation. The alloy is heat treated at elevated temperatures between about 740° F. and about 850° F. for a time period of about 3 minutes to 14 minutes.

Abstract: [Problem to be solved] For an Ag—CuO alloy based electrode material for thermal fuses, rolling workability is significantly decreased as the content of CuO is increasing, and the reduction of a plate thickness is difficult in the rolling process after internal oxidation. [Solution] An electrode material for thermal fuses comprising 50 to 99 mass % of Ag and 1 to 50 mass % of Cu is provided, the material having a structure in which an internal oxidation layer is formed at each of the front and back surfaces, and having a non-oxidized layer in the central portion.

Abstract: A copper-based alloy wire made of a material selected from the group consisting of a copper-gold alloy, a copper-palladium alloy and a copper-gold-palladium alloy is provided. The alloy wire has a polycrystalline structure of a face-centered cubic lattice and consists of a plurality of equi-axial grains. The quantity of grains having annealing twins is 10 percent or more of the total quantity of the grains of the copper-based alloy wire.

Abstract: An aspect of this copper alloy contains: Mg at a content of 3.3 at % or more to less than 6.9 at %; and either one or both of Cr and Zr at respective contents of 0.001 at % to 0.15 at %, with the balance being Cu and inevitable impurities, wherein when the content of Mg is represented by A at %, a conductivity ? (% IACS) satisfies the following Expression (1), ??{1.7241/(?0.0347×A2+0.6569×A+1.7)}×100 ??(1). An aspect of this method for producing a copper alloy includes: heating a copper material having the composition of the copper alloy to a temperature of 300° C. to 900° C.; rapidly cooling the heated copper material to a temperature of 200° C. or lower at a cooling rate of 200° C./min or greater; and subjecting the rapidly cooled copper material to working.

Abstract: A copper alloy for an electric device contains Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities. A method of producing a copper alloy includes: performing heating of a copper material to a temperature of not lower than 500° C. and not higher than 1000° C.; performing quenching to cool the heated copper material to 200° C. or lower with a cooling rate of 200° C./min or more; and performing working of the cooled copper material, wherein the copper material is composed of a copper alloy containing Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less.

Abstract: A heat treatment method for unleaded brass alloy is provided to improve processability, cracking resistance, wear resistance and anti-corrosive property of unleaded brass alloy containing no lead or containing a very small amount of lead. The heat treatment method includes full annealing an unleaded brass alloy material, mechanical processing the material after full annealing and soft annealing the material after mechanical processing.

Abstract: The invention relates to an electrical conductor (2) having a longitudinal axis (A) parallel to the rolling direction of a conductor wire, comprising copper material and an attachment surface (7) configured for attaching to a receiving surface of a silicon wafer (3) to establish an electrical connection. The copper material has a purity of at least 99.5% wherein the grains have a cubic texture comprising a set of cubic axes directed within an up to 20 degree angular range to the longitudinal axis (A), and whereby at least 65% of the grains have said cubic texture. The invention also relates to a process for manufacturing conductor (2) and photo voltaic modules comprising said conductor (2), and silicon wafers.

Abstract: A crimp fitting comprises a metal tube wall that forms both a cylindrical tube portion and an adjacent annular O-ring channel portion. The tube wall has a first wall thickness along the cylindrical tube portion and a second wall thickness along at least part of the O-ring channel portion. The second wall thickness is less than the first wall thickness. The cylindrical tube portion and O-ring channel are configured and adapted to encircle a cylindrical end portion of a tube when such end portion of the tube is inserted into the fitting.

Abstract: The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ? (mass %) satisfies the formula 20 (mass %)???60 (mass %), the standard deviation ? (Ni+Co+Si) satisfies the formula ? (Ni+Co+Si)?30 (mass %), and the surface area ratio S (%) satisfies the formula 1%?S?10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 ?m or greater and 1 ?m or less when observed in a cross section parallel to a rolling direction.

Abstract: A method of producing a copper alloy wire rod, containing: a casting step for obtaining an ingot by pouring molten copper of a precipitation strengthening copper alloy into a belt-&-wheel-type or twin-belt-type movable mold; and a rolling step for rolling the ingot obtained by the casting step, which steps are continuously performed, wherein an intermediate material of the copper alloy wire rod in the mid course of the rolling step or immediately after the rolling step is quenched.

Abstract: Provided are a highly pure copper anode for electrolytic copper plating, a method for manufacturing the same, and an electrolytic copper plating method using the highly pure copper anode. The highly pure copper anode obtains a crystal grain boundary structure having a special grain boundary ratio L?N/LN of 0.35 or more. LN is a unit total special grain boundary length. L?N is a unit total special boundary length. By having the configuration described above, plating defect can be reduced by suppressing the occurrence of the particles, such as the slime or the like, which are generated on the anode side in the plating bath.

Abstract: A copper alloy for an electronic device containing Mg in a range of 2.6 atomic % or more and 9.8 atomic % or less, Al in a range of 0.1 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities.

Abstract: One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity ? (% IACS) is within the following range when the content of Mg is given as A atomic %, ??{1.7241/(?0.0347×A2+0.6569×A+1.7)}×100. Another aspect of this copper alloy for an electronic device is composed of a ternary alloy of Cu, Mg, and Zn which includes Mg at a content of 3.3 to 6.9 atomic % and Zn at a content of 0.1 to 10 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity ? (% IACS) is within the following range when the content of Mg is given as A atomic % and the content of Zn is given as B atomic %, ??{1.7241/(X+Y+1.7)}×100 X=?0.0347×A2+0.6569×A Y=?0.0041×B2+0.2503×B.

Abstract: A method of manufacturing a soft-dilute-copper-alloy material includes a plastic working of a soft-dilute-copper-alloy including an additional element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn and Cr, and a balance consisting of copper and inevitable impurity, and a subsequent annealing treatment of the soft-dilute-copper-alloy. A working ratio in the plastic working before the annealing treatment is not less than 50%.

Abstract: A copper alloy wrought material, containing 1.5 to 7.0 mass % of Ni, 0.3 to 2.3 mass % of Si, 0.02 to 1.0 mass % of S, and optionally at least one selected from the group consisting of Sn, Mn, Co, Zr, Ti, Fe, Cr, Al, P, and Zn in a total amount of 0.05 to 2.0 mass %, with the balance being Cu and unavoidable impurities, wherein sulfide particles, which contribute to machinability, are dispersed therein, in which an average diameter of the sulfide particles is 0.1 to 10 ?m, and in which an area ratio of the sulfide particles is 0.1 to 10%, and wherein the copper alloy wrought material has a tensile strength of 500 MPa or greater and an electrical conductivity of 25% IACS or higher.

Abstract: The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4?[Ni+Co]/Si?about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5?Ni/Co?about 2.

Abstract: A method of manufacturing a sheet of a copper-based alloy containing controlled amounts of Ni, Sn, P, optionally Zn and Fe, Co, Mg, Ti, Cr, Zr, and Al with the remainder being Cu and unavoidable impurities, comprising the steps of cold rolling followed by annealing at least one time of an ingot of the copper-based alloy, thereafter performing intermediate cold rolling, which is a cold rolling process before final cold rolling process, performing annealing with controlled temperature and time to obtain sheet with a grain size of 20 ?m or less, performing final cold rolling at a percent reduction Z to meet the following Formula 0.8×(100?10X?Y)<Z<100?10X?Y, where Z is percent cold reduction, X is Sn content, and Y is the total content (wt.%) of all elements other than Sn and Cu, and performing low-temperature annealing at a temperature below the recrystallization temperature.

Abstract: A copper base rolled alloy has a copper base alloy composition containing 0.05 percent by mass or more, and 10 percent by mass or less of at least one type of element selected from Be, Mg, Al, Si, P, Ti, Cr, Mn, Fe, Co, Ni, Zr and Sn, wherein the X-ray diffraction intensity ratio I(111)/I(200) where I(hkl) is the X-ray diffraction intensity from (hkl)plane measured with respect to a rolled surface is 2.0 or more.

Abstract: A method of processing a bismuth brass article includes the steps of machining an extruded brass rod to form an article of a desired shape and annealing the article at an annealing temperature that is no greater than 575° F./302° C. to relieve stress caused by the machining. The extruded brass rod includes a composition, by weight percentage, that includes 58-63 of copper, 0.8-1.5 of bismuth, 0.05-0.15 of phosphorous and a remainder of zinc and any impurities.

Abstract: A superfine copper alloy wire has a copper-silver alloy wherein the superfine copper alloy wire has a final wire diameter of 0.05 mm or less, and the copper-silver alloy has a copper-silver eutectic crystal phase whose volume ratio to a whole volume of the superfine copper alloy wire is 3% or more and 20% or less.

Abstract: Alloy containing between 1% and 20% by weight of Ni, between 1% and 20% by weight of Sn, between 0.5%, 3% by weight of Pb in Cu which represents at least 50% by weight of the alloy; characterized in that the alloy further contains between 0.01% and 5% by weight of P or B alone or in combination. The invention also pertains to a metallic product having enhanced mechanical resistance at intermediate temperatures (300° C. to 700° C.) and excellent machinability. The metallic product of the invention can be advantageously used for the fabrication of connectors, electromechanical, or micromechanical pieces.

Abstract: A copper alloy material for electric/electronic parts, containing: Sn 3.0 to 13.0 mass %, any one or both of Fe and Ni 0.01 to 2.0 mass % in total, and P 0.01 to 1.0 mass %, with the balance being Cu and unavoidable impurities, wherein an average diameter of grains is 1.0 to 5.0 ?m, wherein a compound X having an average diameter of 30 nm or more and 300 nm or less is dispersed in density 104 to 108 per mm2, wherein a compound Y having an average diameter of more than 0.3 ?m and not more than 5.0 ?m is dispersed in density 102 to 106 per mm2; and wherein a tensile strength is 600 MPa or more.

Abstract: The invention relates to a plain bearing composite material with a supporting layer made of a copper alloy, and with a lining applied to the bearing metal layer. The copper alloy can contain 0.5 5% by weight of nickel, 0.2 to 2.5% by weight of silicon and =0.1% by weight of lead. The lining can be a sputtered layer that is applied without an intermediate layer. The invention also relates to methods for producing this composite material.

Abstract: A rolled copper foil applied with a recrystallization annealing after a final cold rolling step and having a crystal grain alignment satisfying a ratio of [a]/[b]?3, where [a] and [b] are normalized average intensities of a {111}Cu plane diffraction of a copper crystal by ?-scanning at ?=35° and 74°, respectively, in an X-ray diffraction pole figure measurement to a rolled surface is manufactured by controlling a total working ratio in the final cold rolling step before the recrystallization annealing to be 94% or more; and controlling a working ratio per one pass in the final cold rolling step to be 15 to 50%.

Abstract: The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Abstract: A copper alloy material having: 1.0 to 5.0 mass % of Ni; 0.2 to 1.0 mass % of Si; 1.0 to 5.0 mass % of Zn; 0.1 to 0.5 mass % of Sn; 0.003 to 0.3 mass % of P; and the balance consisting of Cu and an unavoidable impurity. The mass ratio between Ni and each of Si, Zn and Sn is to be Ni/Si=4 to 6, Zn/Ni=0.5 or more, and Sn/Ni=0.05 to 0.2.

Abstract: The invention relates to a plain bearing composite material with a supporting layer made of steel, a bearing metal layer made of a copper alloy, and with a lining applied to the bearing metal layer. The copper alloy can contain 0.5 5% by weight of nickel, 0.2 to 2.5% by weight of silicon and =0.1% by weight of lead. The lining can be an electrodeposited layer, a sputtered layer or a plastic layer. The invention also relates to methods for producing this composite material.

Abstract: A copper alloy material for electric/electronic parts, which is produced by the steps containing: finish rolling a copper alloy at a reduction ratio of 40% or less, subjecting the copper alloy finish-rolled to a heat treatment under the conditions at a temperature from 500° C. to 800° C. for a time period from 1 second to 100 seconds by means of a continuous annealing line, and strain relief annealing the copper alloy heat-treated under the conditions at a temperature from 400° C. to 600° C. for a time period from 30 seconds to 1000 seconds, wherein the copper alloy material for electric/electronic parts has rates of dimensional changes before and after the strain relief annealing in both directions parallel to and perpendicular to the rolling direction within the range from ?0.02% to +0.02%.

Abstract: A solid oxide fuel cell (SOFC) interconnect comprises a metal sheet with an air side and a fuel side in accordance with an embodiment of the present invention. The metal sheet comprises a metallic composite having a matrix. The matrix comprises a first metal. The metal sheet also comprises a plurality of discontinuous, elongated, directional reinforcement wires. The reinforcement wires comprise a second metal that is immiscible in the first metal. An oxidation protection layer is disposed on the air side of the metal sheet.

Abstract: This copper alloy contains at least zirconium in an amount of not less than 0.005% by weight and not greater than 0.5% by weight, includes a first grain group including grains having a grain size of not greater than 1.5 ?m, a second grain group including grains having a grain size of greater than 1.5 ?m and less than 7 ?m, the grains having a form which is elongated in one direction, and a third grain group including grains having a grain size of not less than 7 ?m, and also the sum of ? and ? is greater than ?, and ? is less than ?, where ? is a total area ratio of the first grain group, ? is a total area ratio of the second grain group, and ? is a total area ratio of the third grain group, based on a unit area, and ?+?+?=1.

Abstract: The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Abstract: This invention is a copper-based alloy for use in connectors, lead frames, switches and relays and the like that has a superior balance of conductivity, tensile strength and workability in bending and method of manufacturing same. The alloy is manufactured by taking an ingot of a copper-based alloy containing Ni, Sn, P and also at least one or more elements selected from a group consisting of Zn, Si, Fe, Co, Mg, Ti, Cr, Zr and Al in a total amount of 0.01-30 wt. % with the remainder being Cu and unavoidable impurities, performing a combination process of cold rolling followed by annealing at least one time and then performing cold rolling at a percent reduction Z that satisfies the following Formula (1): Z<100?10X?Y ??(1) [where Z is the percent cold reduction (%), X is the Sn content (wt. %) among the various elements, and Y is the total content (wt. %) of all elements other than Sn and Cu] followed by low-temperature annealing performed at a temperature below the recrystallization temperature.

Abstract: Sputtering targets and methods of making sputtering targets are described. The method includes the steps of: providing a sputtering metal workpiece made of a valve metal; transverse cold-rolling the sputtering metal workpiece to obtain a rolled workpiece; and cold-working the rolled workpiece to obtain a shaped workpiece. The sputtering targets exhibits a substantially consistent grain structure and/or texture on at least the sidewalls.

Abstract: The invention aims at providing high-strength copper alloy, especially phosphor bronze, with excellent bending workability. The excellently bendable high-strength copper alloy is obtained through grain size control whereby a finally cold rolled copper alloy with a tensile strength and 0.2% yield strength different by not more than 80 MPa is allowed to have characteristics such that its mean grain size (mGS) after annealing at 425° C. for 10,000 seconds is not more than 5 ?m and the standard deviation of the mean grain size (?GS) is not more than ?×mGS. Improvements in characteristics presumably attributable to the synergistic effect of grain-boundary strengthening and dislocation strengthening are stably achieved by the adjustments of cold rolling and annealing conditions and by the study of the correlation between pertinent characteristic values after the final rolling.

Abstract: The invention relates to a copper alloy having high recrystallization temperature and good conductivity used in brazed heat exchangers which alloy consists of 0.1 to 0.3% in weight chromium. The invention also relates to a method for the manufacturing of the alloy which method consists of the following steps: casting, cold working, annealing and another cold working before brazing.

Abstract: A rolled copper foil applied with a recrystallization annealing after a final cold rolling step and having a crystal grain alignment satisfying a ratio of [a]/[b]?3, where [a] and [b] are normalized average intensities of a {111}Cu plane diffraction of a copper crystal by ?-scanning at ?=35° and 74°, respectively, in an X-ray diffraction pole figure measurement to a rolled surface is manufactured by controlling a total working ratio in the final cold rolling step before the recrystallization annealing to be 94% or more; and controlling a working ratio per one pass in the final cold rolling step to be 15 to 50%.

Abstract: A method for producing metallic strips having a high-grade cube texture based on nickel, copper, aluminum, silver or alloys of these metals including austenitic iron-nickel alloys makes it possible to obtain, during a subsequent annealing process and with lower total degrees of forming, a recrystallization cube layer of a quality equal to that of one obtained using customary roll forming and produces a better quality cube texture with comparable total degrees of forming. To this end, a forming method is provided during which the materials are formed by cold drawing before their recrystallization annealing thereby rendering them high-grade. The tools used for this include: a) non-driven roll devices with an axially parallel flat pair of rolls or turk's head arrangements with two pairs of rolls or; b) fixed drawing jaws that are slanted toward one another. The strips produced according to the invention can be used, for example, as a coating support for producing strip-shaped high-temperature superconductors.

Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10?6/K at 30–800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).