Abstract: A substrate processing apparatus includes a setting unit for setting substrate processing conditions for a substrate in a substrate processing unit for performing a process on the substrate; a detection unit for detecting an abnormality of the substrate processing unit while the substrate processing unit performs the process on the substrate under the substrate processing conditions; a stopping unit for stopping the process on the substrate of the substrate processing unit if the abnormality is detected; and a modifying unit for modifying the substrate processing conditions for a substrate on which the process is stopped to be performed by the stopping unit. Further, a method for modifying substrate processing conditions includes the steps of setting processing conditions; detecting an abnormality of the substrate processing unit; stopping the process if the abnormality is detected; and modifying the processing conditions for a substrate on which the process is stopped.

Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.

Abstract: An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.

Abstract: An apparatus for cleaning substrates includes a supporting member supporting substrates in an upright position, and a liquid supplying member including a first nozzle disposed at one side of a vertical centerline of the substrates, and a second nozzle is disposed at another side of the vertical centerline of the substrates. Each of the first and second nozzles may include first injection holes to inject cleaning liquid toward lower ends of the substrates or regions adjacent to the lower ends of the substrates.

Abstract: A substrate drying apparatus, including a cleaning bath having a liquid supply unit, a drying tank having a gas supply unit and at least one nozzle in fluid communication with the gas supply unit, and a transfer unit for transferring a substrate from the cleaning bath to the drying tank. The apparatus of the present invention may be used in a substrate drying method, including supplying alternating dry gas mixture and inert gas to dry a substrate.

Abstract: Disclosed herein are an apparatus and method for manufacturing a flat panel display device. The apparatus and method for manufacturing a flat panel display device contribute to a compact apparatus for etching a substrate and damage or breakage prevention of the substrate during the transfer of the substrate by virtue of stoppers. The etching apparatus comprises a loader for loading or unloading a substrate, an etching device for etching the substrate into a desired shape, a DI rinsing device for rinsing fine particles and etchant generated during the etching process from the etched substrate, an air knife for drying the rinsed substrate, and one or more turn stages provided at one or more locations between the above respective devices, and adapted to change a transfer direction of the substrate.

Abstract: An etching system (3) includes an etching chamber (31), an etchant solution tank (32) connected with the etching chamber, a heater (34) set in the tank, and a deionized water (DIW) adding device. The DIW adding device includes a DIW feeding pipe (36) having a first timer (361), and a clean dry air (CDA) feeding pipe (35) having a second timer (351). The DIW and CDA feeding pipes combine into a main pipe (37) that is connected with the etching chamber. A portion of the DIW feeding pipe is set in the tank and heated by the heater. The temperature of the DIW fed into the etching chamber and the temperature of the etchant solution pumped into the etching chamber are same. Thus when the DIW is fed into the etching chamber, the temperature of the etching chamber does not fluctuate, which can maintain the quality of the etching process.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary forces.

Abstract: A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

Abstract: An apparatus for treating an edge of a semiconductor substrate includes an etchant supply nozzle for supplying a first etchant to the edge of the semiconductor substrate. The apparatus further includes a shielding cover for preventing an etchant from flowing to a shielding surface of the semiconductor substrate. The shielding cover is movable in an upward and downward direction. The apparatus also includes a device for cleaning the edge of the semiconductor substrate. According to the apparatus, after a wafer edge is etched, foreign substances remaining at the wafer edge is efficiently removed.

Abstract: In an apparatus for etching a glass substrate according to the present invention, impurities that are attached to the surface of a glass substrate, which are formed by assembling a color filter substrate and a TFT substrate provided in the etching bath filled with etchant, are removed by using ultrasonic oscillation generated from an ultrasonic oscillator, by which a glass substrate having uniform thickness and surface is obtained.

Abstract: A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

Abstract: An ultrasonic etching apparatus for chemically-etching a workpiece is disclosed. The apparatus includes an outer tank at least partially filled with an aqueous solution, an inner tank at least partially disposed within the outer tank and in contact with aqueous solution, the inner tank at least partially filled with an etching solution, a lid engaged with the mouth of said inner tank; and an ultrasonic transducer coupled to the outer tank to impart ultrasonic energy to the etching solution in said inner tank. Also disclosed are methods of using the apparatus to etch workpieces.

Abstract: Abrasive composition for the chemical-mechanical polishing in one stage of substrates used in the microelectronics semiconductors industry containing at least one metal layer and one insulator layer, comprising an acid aqueous suspension of individualized particles of colloidal silica, not linked to each other by siloxane bonds, having a mean particle diameter of between 5 and 20 nm and an oxidizing agent, and chemical-mechanical polishing process using such a composition.

Abstract: In this disclosure, air flow is formed above chemical liquid film and a move of the chemical liquid is generated by making the air flow into a contact with the surface of chemical liquid. Further, a negative pressure is generated in a space between a processing object substrate and a plate by rotating the plate. Consequently, uniformity of processing of chemical liquid is improved, so that liquid removing step can be carried out effectively. As a result, yield rate of chemical liquid treatment can be improved.

Abstract: A device (1) for treating objects, in particular silicon wafers (2), with a fluid (3), comprising a container (4) that holds the fluid (3); a rotatable carrying arrangement (5) for accommodation of the objects to be treated, which is disposed at least partially in the container (4); and a rotatably drivable shaft, which is run on at least one bearing (13, 14) and joined to the carrying arrangement (5); with the bearing (13, 14) including a first bearing member (22), which is joined to the shaft, and a second bearing member (24), which adjoins the first bearing member (22) and contains superconductive material; with the first bearing member (22) being kept spaced from the second bearing member (24) by magnetic forces.

Abstract: Metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics are provided. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., ?8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.

Abstract: A substrate processing apparatus comprises roll chucks for holding and rotating a substrate, a closable chamber housing the roll chucks therein, and a gas introduction pipe for introducing a gas into the chamber. The substrate processing apparatus further comprises an etching unit for etching and cleaning a peripheral portion of the substrate while the substrate is being rotated by the roll chucks, and a first supply passage for supplying a first liquid to the etching unit.

Abstract: A polishing machine for a peripheral edge of a semiconductor wafer comprises a rotary mechanism 2 which rotates a stack 1 of semiconductor wafers 4 mounted thereon, and a polishing mechanism 3 which is arranged to be movable in the radial direction of the rotary mechanism 2 and polishes the peripheral edges of the rotating semiconductor wafers 4 by means of contactless polishing. Minute gaps s are formed between the rotary column 10 of the polishing mechanism 3 and the stack 1 of semiconductor wafers 4, and polishing solution is drawn into these minute gaps s. The peripheral edges of the semiconductor wafers 4 are polished by means of contactless polishing, using polishing abrasive particles included in polishing solution.

Abstract: Techniques for chemically etching a fiber tip to form a smooth fiber probe. One implementation applies a coating layer around a bare fiber to expose only an end facet of the bare fiber and then the exposed end facet is immersed into an etching liquid to be away from a meniscus interface between the etching liquid and the fiber to etch the fiber from the end facet.

Abstract: An apparatus includes a chamber for containing a fluid, a guide seated in the chamber, and a transfer robot for loading and/or unloading a plurality of wafers to and/or from the guide. The wafers are located on the guide. The guide has a supporting member for supporting a wafer and a stopper member for preventing the wafer from being inclined over a predetermined range. The stopper member is in contact with a wafer edge disposed at a higher position than a wafer edge supported by the supporting member. A wafer guide has a stopper member to prevent adjacent wafers from being inclined and coming in contact with each other. Therefore, it is possible to suppress a poor drying such as water spots (or watermarks) produced when wafers are adhered to each other in a drying process.

Abstract: Method for etching a substrate wherein, after placing in an etching chamber, said substrate is treated with a mixture of HF and acetic acid. Acetic acid is introduced into the chamber first, followed by the hydrogen fluoride. Hydrogen fluoride is introduced via an intermediate stage during which the hydrogen fluoride is stored in an auxiliary chamber. By this means back-flow of a corrosive mixture consisting of hydrogen fluoride and acetic acid into the piping assembly for hydrogen fluoride is prevented and, thus, the life of the piping assembly concerned is appreciably prolonged and metal contamination on substrate treated later is prevented.

Abstract: A base body is provided, on which a first sealing ring and a second sealing ring are disposed. A substrate is disposed on the sealing rings in such a way that a cavity is formed between the first sealing ring, the second sealing ring, the base body and the substrate. An etching substance can be introduced into the cavity in order to etch clear a conductive layer that has been applied to the substrate. When a conductive layer that has been applied to the substrate back surface has been uncovered, an electrolyte can be introduced into the cavity, making contact with the conductive layer and therefore the substrate back surface.

Abstract: A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Abstract: A method and structure for an apparatus for removing metal from an integrated circuit structure is disclosed. A container holds an integrated circuit structure that has a metal portion. An electronic device connected to the container produces an electronic field proximate to a limited region of the metal portion. A first supply connected to the container supplies an oxidizing agent within the container. A solvent supply connected to the container supplies solvent to the limited region of the metal portion.

Abstract: Substantially transparent electrodes are formed on a substrate by a process including forming on the substrate, in order, a bottom high index layer, a metallic conductive layer, and a top high index layer with a conductivity of at least about 400 ?/square; and chemically etching the bottom high index layer, the top high index layer and the conductive layer to form discrete electrodes in the metallic conductive layer.

Abstract: A stripping solution is supplied onto the surface of a substrate and an alternating magnetic flux is applied to the substrate. The alternating magnetic flux induces a current in a conductive pattern of the substrate which heats the conductive pattern while the stripping solution is in contact with the substrate. The stripping solution, containing particles to be cleaned off the substrate, is then removed from the substrate.

Abstract: A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.

Abstract: A method and apparatus for controlling a temperature of a microelectronic substrate. In one embodiment, the apparatus can include a substrate support configured to engage and support the microelectronic substrate. The apparatus can further include a temperature controller having one or more thermal links coupled directly with the substrate when the substrate is supported by the substrate support. The thermal links can maintain thermal contact with the substrate when the substrate is either stationary or mobile relative to the temperature controller. The temperature controller can heat or cool different portions of the substrate at different rates with one or more of several heat transfer devices, including liquid jets, gas jets, resistive electrical elements and/or thermoelectric elements.

Abstract: Disclosed herein are slurry compositions for use in CMP (chemical mechanical polishing) process of metal wiring in manufacturing semiconductor devices, comprising a peroxide, an inorganic acid, a propylenediaminetetraacetate (PDTA)-metal complex, a carboxylic acid, a metal oxide powder, and de-ionized water, wherein the PDTA-metal complex plays a major role in improving overall polishing performance and reproducibility thereof by preventing abraded tungsten oxide from readhesion onto the polished surface, as well as in improving the dispersion stability of the slurry composition.

Abstract: A method and a device for locally removing coatings from components, a component (5) provided with a coating at least in certain areas being provided, an absorbent medium being provided, the medium being supplied with a coating removal liquid, and the medium containing the coating removal liquid being brought into contact with the area of the component (5) from which the coating is to be removed (FIG. 2).

Abstract: A wet etching apparatus is disclosed. The apparatus comprises a first tank, containing a first wet etching solution; a filter, having a filter cartridge, connected to the first tank to filter out the impurities in the first solution; a second etching tank, connected to the filter and the first tank in parallel, containing a second solution; a reaction tank, connected to the filter, wherein having a wet etching reaction; an exhaust component, connected to the filter and the reaction tank in parallel; a first pump, delivering the first solution to the reaction tank through the filter; and a second pump, delivering the second solution to the exhaust component to exhaust the solution from the etching tank through the filter.

Abstract: An apparatus and a method for etching a silicon nitride thin film are described. The method provides a phosphoric acid tank. A sonic wave generator is disposed on a side of the phosphoric acid tank. Thereafter, a wafer is submerged in the phosphoric acid tank, wherein a silicon nitride thin film is already formed on the wafer. The sonic wave generator is then turned on to conduct the etching or the removal of the silicon nitride thin film on the wafer. Since a sonic wave generator is installed on a side of the phosphoric acid tank, the mixing between water and the concentrated phosphoric acid in the phosphoric acid tank is more even to improve the etching uniformity of the thin film.

Abstract: A substrate treatment method including the steps of: generating droplets of a treatment liquid by mixing the treatment liquid with a gas; and causing the treatment liquid droplets generated in the liquid droplet generating step to impinge on a surface of a substrate being treated. The treatment liquid droplets have a volume median diameter of 5 &mgr;m to 40 &mgr;m.

Abstract: The present invention relates to a substrate processing apparatus and a substrate processing method which are useful for removing a metal, organic materials such as a resist material and etching residues, particles, etc. adhering to the surface of a substrate, such as a semiconductor wafer. A substrate processing apparatus according to the present invention includes: a substrate holder for holding a substrate; a plurality of anodes and cathodes disposed opposite the substrate held by the substrate holder and arranged alternately along at least one direction; a processing liquid supply section for supplying a processing liquid between the substrate held by the substrate holder and the plurality of anodes and cathodes; and a power source for applying a voltage between the anodes and the cathodes.

Abstract: A substrate processing apparatus is provided with a spin base for rotationally holding a substrate, an atmosphere cutoff plate for cutting off a top surface of the substrate from the outer atmosphere, a splash guard for receiving a processing solution spun off from the substrate or the like, a guard up-and-down moving mechanism for vertically moving the splash guard. In performing processing with a processing solution while rotating a substrate, the splash guard is disposed by the guard up-and-down moving mechanism so that the level of a top surface of the splash guard should not be higher than the level of a top surface of the atmosphere cutoff plate and it is thereby possible to prevent the atmosphere above the atmosphere cutoff plate from being involved in the recovery duct through rotation of the atmosphere cutoff plate.

Abstract: In a coating apparatus for removing edge pool formed on a wafer side surface of a coating film deposited on a wafer by edge rinse treatment using a rinse solution, a mechanism is provided in which the edge rinse treatment is performed by mixing a plurality of solvents having different dissolving rates for dissolving the coating film.

Abstract: An apparatus and method for polishing objects, such as semiconductor wafers, utilizes one or more pivotable load-and-unload cups to transfer the objects to and/or from one or more object carriers to polish the objects. Each pivotable load-and-unload cup may be configured to transfer the objects to and/or from a single object carrier. Alternatively, each pivotable load-and-unload cup may be configured to transfer the objects to and/or from two object carriers. The pivotable load-and-unload cups may be configured to be pivoted about one or more pivoting points over at least one polishing surface, such as a polishing pad surface.

Abstract: A substrate processing apparatus processes a substrate such as a semiconductor wafer by supplying a processing liquid. The substrate processing apparatus includes a substrate holder (1) for holding and rotating a substrate (W), a lower surface processing unit (2) for processing a lower surface of the substrate (W) by supplying a processing liquid to the lower surface of the substrate (W), and an outer circumferential edge processing unit (3) for processing an outer circumferential edge of the substrate (W) by supplying the processing liquid to the outer circumferential edge of the substrate (W). The substrate processing apparatus further includes a gas supply unit (5) for supplying a gas to an upper surface of the substrate (W).

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A device and method for processing substrates, whereby medium consumption and processing time are reduced. According to the inventive method, liquid is conducted to a surface of the substrate that is to be treated via at least one nozzle that is arranged in a substantially centric position with respect to said substrate and via a plurality of second nozzles that are controlled separately from the first nozzle.

Abstract: A wet etching system for selectively patterning substrates having regions covered with self-assembled monolayers (SAM) thereby controlling the etch profile. The system contains a) a liquid etching solution; and b) at least one additive to the liquid etching solution having a higher affinity to the regions of the substrate covered with the SAMs than to the other regions of the substrate. Also provided is a method of selectively patterning substrates having regions covered with self-assembled monolayers (SAMs), thereby controlling the etch profile, the method consisting of the steps of a) providing a liquid etching solution; b) adding at least one additive to said etching solution having a higher affinity to the regions of the substrate covered with the SAMs than to the other regions of the substrate; and c) etching said substrate with said liquid etching solution containing at least one additive.

Abstract: A system for processing microelectronic substrates in a liquid or supercritical carbon dioxide process media comprises (a) a plurality of carbon dioxide processing chambers; (b) a carbon dioxide supply vessel operatively associated with each of the carbon dioxide processing chambers; (c) a first process chemical supply vessel operatively associated with at least one of the carbon dioxide processing chambers; (d) a waste collection vessel operatively associated with at least one of the carbon dioxide processing chambers; and (e) a controller operatively associated with the plurality of processing chambers, the carbon dioxide supply vessel, the vacuum pump if present, the first process chemical supply vessel, and the waste collection vessel, the controller configured to independently process microelectronic substrates in each of the processing chambers.

Abstract: An etching method and an etching apparatus are provided. Silicon (Si) from surfaces semiconductor wafers W dissolves into an etching liquid E stored in a process bath 10. On detection of the concentration of silicon by a concentration sensor 50, the etching liquid E in the process bath 10 is discharged while leaving a part of the etching liquid when the Si concentration in the etching liquid E reaches a designated concentration. After that, a new etching liquid of substantially equal to an amount of the discharged etching liquid E is supplied into the process bath 10 and added to the etching liquid remaining in the bath 10. Consequently, it is possible to restrict the etching rate just after the exchange of etching liquid from rising excessively.

Abstract: In this disclosure, air flow is formed above chemical liquid film and a move of the chemical liquid is generated by making the air flow into a contact with the surface of chemical liquid. Further, a negative pressure is generated in a space between a processing object substrate and a plate by rotating the plate. Consequently, uniformity of processing of chemical liquid is improved, so that liquid removing step can be carried out effectively. As a result, yield rate of chemical liquid treatment can be improved.

Abstract: An apparatus for solving an edge exclusion problem when polishing a semiconductor wafer includes a rotatable polishing platen with a polishing pad attached to its upper surface. A polishing slurry is deposited on the upper surface of the polishing pad during polishing. Mounted above the polishing pad is a rotatable polishing head for holding a substrate. A non-rotary actuator assembly is coaxially oriented about the outer edge of the polishing head. A ditched ring is removably attached to the bottom surface of the actuator assembly. A multiplicity of conduit grooves are formed in the bottom section of the ditched ring that allows the polishing slurry to travel unimpeded beneath the rotating wafer. A reduced wall thickness at the bottom of the ditched ring is configured to displace wrinkles from the outer edge of the wafer to the outer periphery of the ditched ring. This solves the edge exclusion problem while permitting polishing slurry to pass under the wafer.

Abstract: Apparatuses (10, 100), and methods of using same, for the simultaneous thinning of the backside surfaces of a plurality of semiconductor wafers (W) using a non-crystallographic and uniform etching process, are described. The apparatuses (10, 100) include a fixture (12, 102) having a plurality of horizontal receptacles (14, 16, 18, 20, 104, 106, 108, 110) for receiving the semiconductor wafers (W). The loaded fixtures (12, 102) are then immersed into an etchant solution (36, 146) that is capable of isotropically removing a layer of semiconductor material from the backside surface of the semiconductor wafers (W). The etchant solution (36, 146) is preferably heated to about 40° C.-50° C. and constantly stirred with a magnetic stirring bar (48, 158). Once a sufficient period of time has elapsed, the thinned semiconductor wafers (W) are removed from the etchant solution (36, 146).

Abstract: There is provided a chemical treatment apparatus for performing a chemical treatment on a treating surface of a wafer etc. by supplying a chemical via a cell. The cell is constituted by a cylindrical inner cell and a cylindrical outer cell with open ends attached to an outer side of the inner cell. The outer cell is axially movable and arbitrarily varies the width of a slit formed between a bottom end of the outer cell and a top surface of the substrate-holding means by the axial movement, thereby adjusting the discharge rate of the chemical and varying the pressure of the chemical. This permits the realization of rapid supply and replacement of the chemical to through holes, non-through holes or grooves.

Abstract: An apparatus and method for delivering ozone to a workpiece. In one embodiment, fluid is sprayed onto a workpiece placed in an ozone-rich environment. Alternatively, ozone is mixed with the fluid prior to spraying the fluid onto the workpiece. When spraying the fluid, the invention pulses the fluid at desired rates to create a substantially uniform layer of ozone-rich fluid on the workpiece. In another embodiment, the workpiece is also slowly rotated during at least a portion of the time the layer of ozone-rich fluid is applied to the workpiece.

Abstract: Disclosed is an apparatus and method for controlling boiling condition of hot H3PO4 solution by adjusting the vapor extracting rate thereof, wherein an acid tank filled with hot H3PO4 solution to a level surface is located in a treatment room and a temperature thermocouple is arranged above the level surface of the hot H3PO4 solution to monitor the vapor temperature near the level surface of the H3PO4 solution. The vapor temperature is used to adjust the extracting rate of the treatment room by control of a damper connected to an outlet of the treatment room. According to the present invention, the treatment apparatus and method can control the boiling condition of the hot H3PO4 solution thereof by properly adjusting the extracting rate, and therefore avoid defects and loss of control in manufacturing processes.