Abstract: A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of the first set of parameters based on the difference, and polishing the second substrate on the first platen using the adjusted parameter.

Abstract: A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).

Abstract: An apparatus for applying different amounts of pressure to different locations of a semiconductor device structure or other substrate during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to individually apply pressure to a major surface of the semiconductor device structure during polishing thereof. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing pad includes a first portion, and the in-situ monitoring system includes a light source and a light detector. The light source emits light, and light emitted from the light source is directed through the first portion and to a surface of the film being polished. Light reflecting from the surface of the film being polished and passing through the first portion is received at the light detector. An electronic signal is generated based on the light received at the light detector. When the electronic signal is evaluated not to satisfy one or more constraints, a gain for the light detector is adjusted so that the electronic signal would satisfy the one or more constraints.

Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a light stable polymeric endpoint detection window, comprising: a polyurethane reaction product of an aromatic polyamine containing amine moieties and an isocyanate terminated prepolymer polyol containing unreacted —NCO moieties; and, a light stabilizer component comprising at least one of a UV absorber and a hindered amine light stabilizer; wherein the aromatic polyamine and the isocyanate terminated prepolymer polyol are provided at an amine moiety to unreacted —NCO moiety stoichiometric ratio of <95%; wherein the light stable polymeric endpoint detection window exhibits a time dependent strain of ?0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 100 minutes and an optical double pass transmission of ?15% at a wavelength of 380 nm for a window thickness of 1.

Abstract: A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d) calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.

Abstract: A substrate processing apparatus discharges a hydrofluoric acid solution from discharge nozzles toward grooves formed in side walls of an inner bath. The hydrofluoric acid solution discharged from the discharge nozzles impinges upon the grooves to diffuse, thereby moving toward a top portion of the inner bath in the form of low-speed uniform liquid flows. Thus, a metal component and foreign substances generated in the inner bath float up toward the top portion of the inner bath without being agitated within the inner bath, and are rapidly drained to an outer bath together with the hydrofluoric acid solution.

Abstract: An etching apparatus is provided for etching a substrate. The etching apparatus includes a first tank including a first etchant, and an etch bath connected to the first tank and receiving the first etchant, the etch bath containing a residual etchant including a diluted etchant and residue material after the substrate is etched with the first etchant. The etching apparatus further includes a second tank receiving the residual etchant from the etch bath and separating the diluted etchant from the residue material, a connecting passage connecting the first and second tanks for transferring the separated diluted etchant from the second tank to the first tank, and an outlet pipe attached to the second tank for discharging the residue material.

Abstract: A liquid processing apparatus is arranged to planarize a film on a substrate by supplying onto the film a process liquid for dissolving the film while rotating the substrate. The apparatus includes a substrate holding member configured to rotatably hold the substrate in a horizontal state, a rotation mechanism configured to rotate the substrate holding member, and a liquid supply mechanism configured to supply the process liquid onto a surface of the substrate. The liquid supply mechanism includes first and second liquid delivery nozzles configured to deliver the same process liquid. The first liquid delivery nozzle has a smaller diameter and provides a smaller delivery flow rate, as compared to the second liquid delivery nozzle. The first liquid delivery nozzle is inclined to deliver the process liquid in a rotational direction of the substrate, and is movable between a center of the substrate and a peripheral edge thereof.

Abstract: A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

Abstract: The present invention relates to shear sensors. In particular, the present invention relates to deformable sensors for measurement of shear forces during chemical mechanical polishing.

Abstract: An apparatus for applying different amounts of pressure to different locations of a semiconductor device structure or other substrate during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to individually apply pressure to a major surface of the semiconductor device structure during polishing thereof. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: An extremely thin semiconductor-on-insulator (ETSOI) wafer is created having a substantially uniform thickness by measuring a semiconductor layer thickness at a plurality of selected points on a wafer; determining a removal thickness to be removed at each of the plurality of selected points such that removal of the removal thickness results in a substantially uniform within-wafer semiconductor layer thickness; implanting a species into the wafer at each of the plurality of selected points with at least one of a dose level and an energy level based on the removal thickness for the respective point; and polishing the semiconductor layer to thin the semiconductor layer.

Abstract: In a substrate supporting apparatus of a surface potential measuring apparatus, a first fluid is ejected around a target region on an upper surface of a substrate from a circular-shaped first porous member of a first fluid ejection part and a second fluid is ejected onto a lower surface of the substrate from a circular-shaped second porous member of a second fluid ejection part which is opposite to the first fluid ejection part. The substrate can be supported and flattened between the first fluid ejection part and the second fluid ejection part. Also, it is possible to keep the distance between the substrate and the first porous member, with a simple construction. As a result, a probe can be positioned above a flatted target region with leaving a predetermined spacing, to perform measurement of a surface potential of the target region on the substrate with high accuracy.

Abstract: A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.

Abstract: A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.

Abstract: System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method for fabricating ICs from a semiconductor wafer comprising performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further comprises removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.

Abstract: A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.

Abstract: Chemical-mechanical polishing (CMP) systems comprising apparatus and methods which allow the physical and chemical characteristics of a CMP slurry to be monitored during the polishing process, both on the pad and in the fresh slurry, are provided. The methods and apparatus of the invention also furnish the CMP operator with real-time information about the polishing process, which can provide insight into various chemical and physical mechanisms involved in chemical-mechanical polishing. The data provided by the sensors also make available valuable information about the stability and reproducibility of the particular CMP process being observed.

Abstract: A failure alarm device includes: an operation instruction capturing unit; an operation status signal capturing unit; and a timing and alarming unit for starting timing when the operation instruction capturing unit captures a start-operation instruction and the operation status signal capturing unit captures an operation status signal indicative of that the CMP apparatus is in the preset operation status, and for alarming if a duration of the operation status signal indicative times out. During operation of the CMP apparatus, when there occurs an unexpected failure in a computer or control software or the CMP apparatus is powered off, an alarm can be initiated in a timely way so as to inform an apparatus engineer to obviate the failure, and wafer rejects in the CMP apparatus can be avoided. A failure alarm method is also provided.

Abstract: The present invention provides a system (100) for conditioning multi-component slurries utilized in chemical mechanical polishing (CMP) of semiconductor wafers (140). The system provides a first slurry component (108), and a second slurry component (120). A conditioning component (102) has first and second inlets, and an outlet operatively coupled to a dispensing system (138). First and second flow control components (116, 126) are operably intercoupled between the first and second inlets and the first and second slurry components, respectively. The system further provides a megasonic energy source (106), adapted to generate an energy field (118) across the conditioning component. A conveyance component (114) conducts the slurry components from the inlets through the energy field, and delivers a final mixture (136) of multi-component slurry to the outlet.

Abstract: A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

Abstract: The invention features an apparatus and a method for supplying ozonated water to more than one process tool. Ozonated water of a first concentration received from an ozonated water generator and water received from a source are mixed to produce ozonated water of a second concentration. The ozonated water of a second concentration is supplied to a first process tool. Ozonated water from the ozonated water generator is supplied to a second process tool while supplying the ozonated water of the second concentration to the first process tool.

Abstract: A substrate polishing apparatus for polishing a polishing surface of a substrate has a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device. The table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power source unit for supplying power to them. The on-wafer data I/O unit is connected to a laser diode (LD) and a photo diode (PD) which are optical I/O units installed outside. The data I/O unit receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer, a VUV photon detector, and a radical ion species emission spectrophotometer.

Abstract: A substrate polishing apparatus for polishing a polishing surface of a substrate has a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device. The table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member.

Abstract: Provided is a method for managing manufacturing apparatuses used in a managed production line including a plurality of manufacturing processes for manufacturing an electronic device, each of the apparatuses being used in each of the processes, the method including: acquiring a property of a reference device manufactured in a predetermined reference production line including the manufacturing processes to be performed; performing at least one of the manufacturing processes in the managed production line, performing the other manufacturing processes in the reference production line, and manufacturing a comparison device; measuring a property of the comparison device; comparing the measured properties between the reference and the comparison devices; and judging whether the manufacturing apparatus used in the at least one manufacturing process is defective or not, based on a property difference between the reference and the comparison devices.

Abstract: A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table.

Abstract: Disclosed are a method of and system for fabricating a semiconductor wafer. The method comprises the steps of providing a silicon wafer having a front side an a back side, building an integrated circuit on the front side of the wafer, and thereafter removing substrate from the back side of the silicon wafer. The building step includes the steps of forming a desired structure in the wafer, and forming an end structure in the wafer, said end structure extending to a greater depth, toward the back side of the wafer, than the desired structure. Also, the removing step includes the step of removing said substrate only to the end structure, whereby no part of the desired structure is removed during the removing step.

Abstract: During processing of a semiconductor wafer bearing a structure including a low-k dielectric layer, a cap layer and the metal-diffusion barrier layer, a chemical mechanical polishing method applied to remove the metal-diffusion barrier material involves two phases. In the second phase of the barrier-CMP method, when the polishing interface is close to the low-k dielectric material, the polishing conditions are changed so as to be highly selective, producing a negligible removal rate of the low-k dielectric material. The polishing conditions can be changed in a number of ways including: changing parameters of the composition of the barrier slurry composition, and mixing an additive into the barrier slurry.

Abstract: A system (and method) for real-time measurement of trace metal concentration in a chemical mechanical polishing (CMP) slurry, includes an electromagnetic radiation flow cell carrying a CMP slurry, a slurry pickup head coupled to the flow cell, and an analyzer for measuring properties of the slurry flowing through the flow cell.

Abstract: To provide an end point detection method applying a resonance phenomenon, an end point detection apparatus, and a chemical mechanical polishing apparatus on which the detection apparatus is loaded for monitoring variation in the thickness of an electrically conductive film in real time, reliably detecting a polishing end point of the electrically conductive film at high accuracy, without generating noise, low power consumption, and capable of reducing the cost.

Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information which can be used to control a planarizing operation.

Abstract: The invention provides a vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof.

Abstract: A semiconductor processing system is provided. The semiconductor processing system includes a first sensor configured to isolate and measure a film thickness signal portion for a wafer having a film disposed over a substrate. A second sensor is configured to detect a film thickness dependent signal in situ during processing, i.e. under real process conditions and in real time. A controller configured to receive a signal from the first sensor and a signal from the second sensor. The controller is capable of determining a calibration coefficient from data represented by the signal from the first sensor. The controller is capable of applying the calibration coefficient to the data associated with the second sensor, wherein the calibration coefficient substantially eliminates inaccuracies introduced to the film thickness dependent signal from the substrate. A method for calibrating an eddy current sensor is also provided.

Abstract: A semiconductor device fabrication method by which a semiconductor wafer is polished by pressing the semiconductor wafer against a polishing pad includes: an optimum condition calculation step for finding polishing conditions based on the hardness of the polishing pad; and a step of polishing the semiconductor wafer according to the polishing conditions that have been found.

Abstract: A method and apparatus for measuring an abrasion amount and a friction force of a polishing pad using a thickness change of a slurry film in a chemical mechanical polishing operation are provided. In a preferred method, for example, a first displacement of a semiconductor wafer with respect to a polishing pad is measured during an initial stage and a first reference range of the thickness change of the slurry film is preferably set to determine a replacement time corresponding to the abrasion amount of the polishing pad. A conditioning condition of the polishing pad conditioning can also be set, and a second displacement of the semiconductor wafer with respect to the polishing pad can be measured when the surface of the semiconductor wafer is polished by the polishing pad. The first displacement is then preferably compared with the second displacement to calculate the thickness change of the slurry film formed between the polishing pad and the semiconductor wafer.

Abstract: An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.

Abstract: A substrate polishing apparatus for polishing a polishing surface of a substrate has a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device. The table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member.

Abstract: A method of measuring a change in thickness of a layer of material disposed on a wafer while polishing the layer. Light is directed at the surface of the wafer from an optical sensor disposed within the polishing pad. The intensity of the reflected light is measured by a light detector also disposed in the polishing pad. The intensity of the reflected light varies sinusoidally with the change in layer thickness as the layer is removed. By measuring the absolute thickness of the layer at two or more points along the sinusoidal curve, the sinusoidal curve is calibrated so that a portion of the wavelength of the curve corresponds to a change in thickness of the layer.

Abstract: An etching system (3) includes an etching chamber (31), an etchant solution tank (32) connected with the etching chamber, a heater (34) set in the tank, and a deionized water (DIW) adding device. The DIW adding device includes a DIW feeding pipe (36) having a first timer (361), and a clean dry air (CDA) feeding pipe (35) having a second timer (351). The DIW and CDA feeding pipes combine into a main pipe (37) that is connected with the etching chamber. A portion of the DIW feeding pipe is set in the tank and heated by the heater. The temperature of the DIW fed into the etching chamber and the temperature of the etchant solution pumped into the etching chamber are same. Thus when the DIW is fed into the etching chamber, the temperature of the etching chamber does not fluctuate, which can maintain the quality of the etching process.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for autonomously monitoring fabrication equipment, for example, integrated circuit fabrication equipment. In one embodiment of this aspect of the invention, the present invention is an autonomous monitoring device including one or more event sensors (for example, acceleration, motion, velocity and/or inertial sensing device(s)) to detect a predetermined event of or by the fabrication equipment (for example, an event that is indicative of the onset, commencement, initiation and/or launch of fabrication process or sub-processes of or by the fabrication equipment). In response thereto, one or more process parameter sensors sample, sense, detect, characterize, analyze and/or inspect one or more parameters of the process in real time (i.e., during the fabrication process).

Abstract: The present invention is aimed to provide a measurement system installable within a processing equipment and more specifically within the exit station of a polishing machine. The optical scheme of this system includes a spectrophotometric channel, an imaging channel and also means for holding the wafer under measurement.

Abstract: A substrate processing apparatus equipped to employ an energy directed at a process side of a substrate to enhance and control material removal is provided.

Abstract: Methods, apparatuses and substrate assembly structures for mechanical and chemical-mechanical planarizing processes used in the manufacturing microelectronic-device substrate assemblies. One aspect of the invention is directed toward a method for planarizing a microelectronic-device substrate assembly by removing material from a surface of the substrate assembly, detecting a first change in drag force between the substrate assembly and a polishing pad indicating that the substrate surface is planar, and identifying a second change in drag force between the substrate assembly and the polishing pad indicating that the planar substrate surface is at the endpoint elevation. After the second change in drag force is identified, the planarization process is stopped.

Abstract: A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

Abstract: A system for regulating an etch process is provided. The system includes one or more light sources, each light source directing light to one or more features and/or gratings on a wafer. Light reflected from the features and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides etching related data to a processor that determines the acceptability of the etching of the respective portions of the wafer. The system also includes one or more etching devices, each such device corresponding to a portion of the wafer and providing for the etching thereof. The processor selectively controls the etching devices to regulate etching of the portions of the wafer.

Abstract: A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.