With Magnetic Field Generating Means For Control Of The Etchant Gas Patents (Class 156/345.46)
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Publication number: 20130240147Abstract: Methods and apparatus for modulating azimuthal non-uniformity in a plasma processing chamber are disclosed. Apparatus includes a plasma processing system having a plasma processing chamber. There is included an RF power supply and a lower electrode configured to receive RF signal from the power supply. There is also included magnet ring disposed off-center relative to a center of the lower electrode, the magnet ring further disposed in one of a first position and a second position, the first position being below the lower electrode, the second position being around an outer periphery of the lower electrode.Type: ApplicationFiled: March 19, 2012Publication date: September 19, 2013Inventors: Sang Ki Nam, Rajinder Dhindsa, Alexei Marakhtanov
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Publication number: 20130220547Abstract: A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.Type: ApplicationFiled: February 14, 2013Publication date: August 29, 2013Applicant: TOKYO ELECTRON LIMITEDInventor: TOKYO ELECTRON LIMITED
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Patent number: 8496781Abstract: The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation.Type: GrantFiled: July 18, 2005Date of Patent: July 30, 2013Assignee: Hitachi High-Technologies CorporationInventors: Kenetsu Yokogawa, Kenji Maeda, Masaru Izawa
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Patent number: 8486242Abstract: One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.Type: GrantFiled: October 18, 2010Date of Patent: July 16, 2013Assignee: Applied Materials, Inc.Inventor: Michael S. Cox
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Patent number: 8470126Abstract: An apparatus for etching features in an etch layer is provided. A plasma processing chamber is provided, comprising a chamber wall, a chuck, a pressure regulator, an electrode or coil, a gas inlet, and a gas outlet. A gas source comprises a fluorine free deposition gas source and an etch gas source. A controller comprises at least one processor and computer readable media, comprising computer readable code for providing a conditioning for a patterned pseudo-hardmask, wherein the conditioning comprises computer readable code providing a fluorine free deposition gas comprising a hydrocarbon gas, computer readable code for forming a plasma, computer readable code for providing a bias less than 500 volts, and computer readable code for forming a deposition on top of the patterned pseudo-hardmask, computer readable code for etching the etch layer, and computer readable code for cyclically repeating the conditioning and etching at least twice.Type: GrantFiled: September 27, 2012Date of Patent: June 25, 2013Assignee: Lam Research CorporationInventors: Ben-Li Sheu, Rajinder Dhindsa, Vinay Pohray, Eric A. Hudson, Andrew D. Bailey, III
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Patent number: 8449715Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.Type: GrantFiled: July 16, 2010Date of Patent: May 28, 2013Assignee: Tokyo Electron LimitedInventors: Kouji Mitsuhashi, Hiroyuki Nakayama, Nobuyuki Nagayama, Tsuyoshi Moriya, Hiroshi Nagaike
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Patent number: 8418649Abstract: A showerhead electrode for a plasma processing apparatus includes an elastomeric sheet adhesive bond between mating surfaces of an electrode and a backing member to accommodate stresses generated during temperature cycling due to mismatch in coefficients of thermal expansion. The elastomeric sheet comprises a thermally conductive silicone adhesive able to withstand a high shear strain of ?300% in a temperature range of room temperature to 300° C. such as heat curable high molecular weight dimethyl silicone with fillers. The sheet form adhesive has bond thickness control for parallelism of bonded surfaces over large areas. The sheet adhesive may be cast or die cut into pre-form shapes that can conform to irregularly shaped features, maximize surface contact area with mating electrode surfaces, and installed into cavities of the mating assembly. Installation can be manually, manually with installation tooling, or with automated machinery.Type: GrantFiled: December 17, 2008Date of Patent: April 16, 2013Assignee: Lam Research CorporationInventors: Dean Jay Larson, Tom Stevenson, Victor Wang
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Patent number: 8402918Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.Type: GrantFiled: April 7, 2009Date of Patent: March 26, 2013Assignee: Lam Research CorporationInventors: Babak Kadkhodayan, Anthony de la Llera
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Patent number: 8382939Abstract: A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate.Type: GrantFiled: July 13, 2009Date of Patent: February 26, 2013Assignee: Applied Materials, Inc.Inventors: Michael Charles Kutney, Roger Alan Lindley
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Patent number: 8298381Abstract: A vacuum process for etching a metal strip running over a backing roll facing a counterelectrode by magnetron sputtering, and a vacuum chamber etching installation implementing the process. A plasma is created in a gas close to the metal strip so as to generate radicals and/or ions that act on the strip, and at least one closed magnetic circuit, the width of which is approximately equal to that of the metal strip, is selected from a series of at least two closed magnetic circuits of different and fixed widths, then the selected magnetic circuit is positioned so as to face the metal strip, and then the etching of the moving metal strip is carried out.Type: GrantFiled: October 26, 2006Date of Patent: October 30, 2012Assignee: Arcelormittal FranceInventors: Hugues Cornil, Benoit Deweer, Claude Maboge, Jacques Mottoulle
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Publication number: 20120241092Abstract: In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle ?1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°<?1?180°.Type: ApplicationFiled: March 23, 2012Publication date: September 27, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Jun Yamawaku, Takafumi Kimura, Chishio Koshimizu
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Patent number: 8272346Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.Type: GrantFiled: April 10, 2009Date of Patent: September 25, 2012Assignee: Lam Research CorporationInventors: Gregory R. Bettencourt, Gautam Bhattacharyya, Simon Gosselin Eng, Sandy Chao
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Patent number: 8267041Abstract: A plasma treating apparatus adapted to provide a predetermined plasma treatment to an object W to be treated comprises a processing chamber 12 configured to be capable of being vacuumed, an object holding means 20 adapted to hold the object to be treated, a high frequency power source 58 adapted to generate high frequency voltage, a plasma gas supplying means 38 adapted to supply a plasma generating gas to be treated to generate plasma to the processing chamber, a pair of plasma electrodes 56, 56B connected to the output side of the high frequency power source via wirings 60 to generate plasma in the processing chamber, the pair of plasma electrodes being brought into an excited electrode state. In addition, a high frequency matching means 72 is provided in the middle of the wirings. In this case, each of the plasma electrodes 56A, 56B is not grounded. Thus, the plasma density can be increased, and the efficiency of generating plasma can be enhanced.Type: GrantFiled: August 30, 2005Date of Patent: September 18, 2012Assignee: Tokyo Electron LimitedInventors: Toshiji Abe, Toshiki Takahashi, Hiroyuki Matsuura
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Patent number: 8262848Abstract: A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.Type: GrantFiled: November 22, 2010Date of Patent: September 11, 2012Assignee: Tokyo Electron LimitedInventors: Masahide Iwasaki, Tomoaki Ukei
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Patent number: 8251012Abstract: Disclosed is a substrate processing apparatus, including: a processing container; a gas supply section to supply a desired processing gas to the processing container; a gas exhaust section to exhaust a surplus of the processing gas from the processing container; a substrate placing member to place a plurality of substrates thereon in a stacked state in the processing container; and an electrode, to which high frequency electric power is applied, to generate plasma for exciting the processing gas, the electrode including two thin and long linear sections disposed in parallel and a short-circuit section to electrically short-circuit one ends of the linear sections, and the linear sections extending beside the substrates in a direction substantially perpendicular to main faces of the substrates.Type: GrantFiled: February 28, 2006Date of Patent: August 28, 2012Assignee: Hitachi Kokusai Electric Inc.Inventor: Nobuo Ishimaru
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Patent number: 8246798Abstract: According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber.Type: GrantFiled: March 2, 2009Date of Patent: August 21, 2012Assignee: Canon Anelva CorporationInventors: Hiroyuki Hosoya, Koji Tsunekawa, Yoshinori Nagamine
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Publication number: 20120175063Abstract: A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.Type: ApplicationFiled: January 5, 2012Publication date: July 12, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Jun YAMAWAKU, Chishio KOSHIMIZU
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Patent number: 8197637Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.Type: GrantFiled: February 19, 2008Date of Patent: June 12, 2012Assignee: SAMSUNG Electronics Co., Ltd.Inventors: Kyung-Woo Lee, Jin-Sung Kim, Joo-Byoung Yoon, Yeong-Cheol Lee, Sang-Jun Park, Hee-Kyeong Jeon
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Patent number: 8186300Abstract: A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source.Type: GrantFiled: February 12, 2009Date of Patent: May 29, 2012Assignee: Hitachi High-Technologies CorporationInventors: Takamasa Ichino, Ryoji Nishio, Tomoyuki Tamura, Shinji Obama
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Patent number: 8114245Abstract: A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.Type: GrantFiled: November 26, 2002Date of Patent: February 14, 2012Assignees: Tokyo Electron LimitedInventors: Tadahiro Ohmi, Masaki Hirayama, Haruyuki Takano, Yusuke Hirayama
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Publication number: 20120024817Abstract: An apparatus and a method for plasma surface treatment which treats a surface of a treatment portion of an electrically conductive object using ions from plasma are disclosed. The apparatus includes a connector electrically connected to the treatment portion for applying negative voltage pulses to the treatment portion; a pulse voltage generating unit electrically connected to the connector; and magnetic cores disposed at the boundary of the treatment portion for preventing electric current caused by the negative voltage pulses applied to the treatment portion from flowing across the boundary of the treatment portion is provided. The apparatus and method for plasma surface treatment can confine the treatment portion by using negative high voltage pulses and magnetic cores. Also, the apparatus and method can apply negative high voltage pulse to the treatment portion of an electrically grounded object such as a metal sheet coil and a metal wire coil.Type: ApplicationFiled: April 12, 2010Publication date: February 2, 2012Applicant: DAWONSYS CO., LTD.Inventors: Sun Soon Park, Hyo Yol Liu
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Patent number: 8092640Abstract: A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for forming a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber. Herein, the gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to each of the discharge spaces via the gas branch section. The branch pipes are configured so that conductances thereof are substantially equivalent to each other.Type: GrantFiled: January 10, 2006Date of Patent: January 10, 2012Assignee: Sharp Kabushiki KaishaInventors: Katsushi Kishimoto, Yusuke Fukuoka
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Patent number: 8092605Abstract: A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.Type: GrantFiled: November 28, 2006Date of Patent: January 10, 2012Assignee: Applied Materials, Inc.Inventors: Steven C. Shannon, Masao Drexel, James A. Stinnett, Ying Rui, Ying Xiao, Roger A. Lindley, Imad Yousif
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Patent number: 8048328Abstract: Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.Type: GrantFiled: December 18, 2006Date of Patent: November 1, 2011Assignee: Applied Materials, Inc.Inventors: Roger A. Lindley, Scott A. Hogenson, Daniel J. Hoffman
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Publication number: 20110253313Abstract: The present invention provides a plasma processing apparatus in which a plasma distribution, a plasma potential, an etching characteristic or a surface processing characteristic varies in time and spatially, and controllability and reliability are high. In the plasma processing apparatus, at least part of a discharge forming electromagnetic wave is introduced into a processing chamber through a transmission electrode. The transmission electrode is provided with a transmission electrode layer as at least part of constituent elements therefor. Slender-shaped slot opening areas are densely formed in the transmission electrode layer. The transmission electrode behaves like a material having electrical conductivity for an RF bias electromagnetic wave or ion plasma vibrations, thereby implementing high stability and high reliability of plasma characteristics and plasma processing characteristics.Type: ApplicationFiled: August 12, 2010Publication date: October 20, 2011Inventors: Keizo SUZUKI, Ken Takei, Takehito Usui, Masami Kamibayashi, Nobuyuki Negishi
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Patent number: 8034212Abstract: A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located.Type: GrantFiled: February 12, 2010Date of Patent: October 11, 2011Assignee: Tokyo Electron LimitedInventors: Hidenori Sato, Daisuke Hayashi
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Patent number: 8028654Abstract: An apparatus and method for initiating a process gas plasma. A conductive plate having a plurality of conductive fingers is positioned in a microwave applicator. An arc forms between the conductive fingers to initiate the formation of a plasma. A transport mechanism may convey process materials through the plasma. A spray port may be provided to expel processed materials.Type: GrantFiled: September 8, 2009Date of Patent: October 4, 2011Assignee: Babcock & Wilcox Technical Services Y-12, LLCInventors: Edward B. Ripley, Roland D. Seals, Jonathan S. Morrell
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Patent number: 8007633Abstract: This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced.Type: GrantFiled: March 28, 2011Date of Patent: August 30, 2011Assignee: Canon Anelva CorporationInventors: Akihiro Egami, Masayoshi Ikeda, Yasumi Sago, Yukito Nakagawa
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Patent number: 7988816Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.Type: GrantFiled: June 21, 2005Date of Patent: August 2, 2011Assignee: Tokyo Electron LimitedInventors: Akira Koshiishi, Masaru Sugimoto, Kunihiko Hinata, Noriyuki Kobayashi, Chishio Koshimizu, Ryuji Ohtani, Kazuo Kibi, Masashi Saito, Naoki Matsumoto, Yoshinobu Ooya, Manabu Iwata, Daisuke Yano, Yohei Yamazawa, Hidetoshi Hanaoka, Toshihiro Hayami, Hiroki Yamazaki, Manabu Sato
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Patent number: 7972469Abstract: Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.Type: GrantFiled: April 22, 2007Date of Patent: July 5, 2011Assignee: Applied Materials, Inc.Inventors: Hiroji Hanawa, Andrew Nguyen, Keiji Horioka, Kallol Bera, Kenneth S. Collins, Lawrence Wong, Martin Jeff Salinas, Roger A. Lindley, Hong S. Yang
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Patent number: 7955986Abstract: A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry.Type: GrantFiled: February 23, 2006Date of Patent: June 7, 2011Assignee: Applied Materials, Inc.Inventors: Daniel J. Hoffman, Matthew L. Miller, Jang Gyoo Yang, Heeyeop Chae, Michael Barnes, Tetsuya Ishikawa, Yan Ye
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Patent number: 7951261Abstract: The present invention relates to a plasma etching apparatus. In the apparatus, potential difference is applied between a substrate support with a substrate seated thereon and a electrode surrounding an edge region of the substrate, and a distance between the substrate and the electrode is set to 3 mm or less so as to locally generate plasma in an area between the substrate and the electrode, thereby removing particles and a thin film in the edge region of the substrate.Type: GrantFiled: August 3, 2006Date of Patent: May 31, 2011Assignee: Jusung Engineering Co. Ltd.Inventor: Bu-Il Jeon
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Patent number: 7942112Abstract: A system and method for preventing formation of a plasma-inhibiting substance within a plasma chamber is provided. In one embodiment, an apparatus that includes a barrier component configured to be disposed within a plasma chamber. The barrier component includes a wall that defines a plasma formation region where a chemically-reducing species is formed from a fluid. A portion of the wall is formed of a substance that is substantially inert to the chemically-reducing species. The wall prevents the chemically-reducing species from interacting with an inner surface of the plasma chamber to form a conductive substance. The barrier component also includes an opening in fluid communication with the plasma formation region. The fluid is introduced into the plasma formation region via the opening.Type: GrantFiled: December 4, 2006Date of Patent: May 17, 2011Assignee: Advanced Energy Industries, Inc.Inventors: Fernando Gustavo Tomasel, Justin Mauck, Andrew Shabalin, Denis Shaw, Juan Jose Gonzalez
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Patent number: 7922865Abstract: In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.Type: GrantFiled: August 28, 2001Date of Patent: April 12, 2011Assignees: Shin-Etsu Chemical Co., Ltd., Tokyo Electron LimitedInventors: Koji Miyata, Jun Hirose, Akira Kodashima, Shigeki Tozawa, Kazuhiro Kubota, Yuki Chiba
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Publication number: 20110068087Abstract: A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.Type: ApplicationFiled: November 22, 2010Publication date: March 24, 2011Inventors: Masahide Iwasaki, Tomoaki Ukei
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Publication number: 20110058147Abstract: A cleaning module for an EUV lithography device with a supply (206) for molecular hydrogen, a heating filament (210) and a line (212) for atomic and/or molecular hydrogen. The line (212) has at least one bend with a bending angle of less than 120 degrees, and has a material on its inner surface which has a low recombination rate for atomic hydrogen. The supply (206) is of flared shape at its end, which faces the heating filament (210). A gentler cleaning of optical elements is achieved with such a cleaning module, or also by exciting a cleaning gas with a cold cathode or a plasma, or by filtering out charged particles via of electrical and/or magnetic fields.Type: ApplicationFiled: September 29, 2010Publication date: March 10, 2011Applicant: Carl Zeiss SMT AGInventors: Dirk Heinrich Ehm, Julian Kaller, Stefan Schmidt, Dieter Kraus, Stefan Wiesner, Almut Czap, Hin-Yiu Anthony Chung, Stefan Koehler
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Patent number: 7883601Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.Type: GrantFiled: January 19, 2007Date of Patent: February 8, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih Ming Chang, Chi-Lun Lu
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Patent number: 7883633Abstract: Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.Type: GrantFiled: December 18, 2006Date of Patent: February 8, 2011Assignee: Applied Materials, Inc.Inventors: Roger A. Lindley, Scott A. Hogenson, Daniel J. Hoffman
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Patent number: 7879186Abstract: A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.Type: GrantFiled: September 4, 2008Date of Patent: February 1, 2011Assignee: Applied Materials, Inc.Inventors: Roger Alan Lindley, Jingbao Liu, Bryan Y. Pu, Keiji Horioka
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Patent number: 7846293Abstract: A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.Type: GrantFiled: March 30, 2005Date of Patent: December 7, 2010Assignee: Tokyo Electron LimitedInventors: Masahide Iwasaki, Tomoaki Ukei
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Patent number: 7828927Abstract: A plasma processing device comprising a chamber (1) for accommodating therein a substrate (11), a high-frequency power supply (5) for generating microwave, and an antenna unit (3) for radiating microwave into the chamber (1). Microwave generated in the power supply (5) is sent to the antenna unit (3) via a waveguide (6). A top plate (4) forming part of a partition wall of the chamber (1) is formed at the upper portion of the chamber (1). A specified annular delay pass unit (2) formed of the same material as that of the top plate (4), for delaying the propagation of microwave, is provided on the outer peripheral portion of the top plate (4). Accordingly, the plasma processing device can restrict an abnormal discharge and the production of the foreign matters.Type: GrantFiled: February 18, 2005Date of Patent: November 9, 2010Assignee: Tokyo Electron LimitedInventors: Kiyotaka Ishibashi, Toshihisa Nozawa
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Patent number: 7824520Abstract: In the case of generating plasma under atmospheric pressure, the particle generated due to generation of high-density plasma is to be a cause of a defect such as a point defect or a line defect of a display portion in a display device. The present invention is offered in view of the above situation, and provides a plasma treatment apparatus for suppressing generation of a particle. According to the present invention, plasma is generated in a limited minimum region to be treated by a plasma treatment over a substrate to be treated. Generation of a particle is suppressed to a minimum by providing a plurality of plasma generation units generating minimum plasma having a similar size as the limited minimum region, changing a relative position of the plurality of plasma generation units and the substrate to be treated, and performing a plasma treatment to a limited predetermined region.Type: GrantFiled: March 24, 2004Date of Patent: November 2, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Osamu Nakamura
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Patent number: 7806985Abstract: An improvement has been made in contact states between a rotating electrode arranged inside a vacuum chamber and a power supply mechanism which touches the rotating electrode to supply electric power thereto. A vacuum device is provided with a vacuum chamber, a rotating electrode arranged inside and electrically insulated from the vacuum chamber, and a power supply mechanism which touches the rotating electrode to supply electric power thereto, wherein the rotating electrode has an annular shape and horizontally rotates with respect to the center axis of the annular shape, and the power supply mechanism is composed of electrode members, and the electrode member and the rotating electrode come into contact with each other at at least one contact surface.Type: GrantFiled: January 24, 2005Date of Patent: October 5, 2010Assignee: Showa Shinku Co., Ltd.Inventors: Masayuki Takimoto, Hiroyuki Komuro, Yutaka Fuse, Tatsumi Abe, Kazuhito Aonahata
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Publication number: 20100243162Abstract: A uniformity of plasma density in a target object surface and plasma processing characteristics can be improved. A plasma processing apparatus 10 includes: a processing chamber 100 in which a plasma process is performed on a wafer W; a first high frequency power supply 140 configured to output a high frequency power; a high frequency antenna 120 including an outer coil, an inner coil and n (n is an integer equal to or greater than 1) number of intermediate coil(s) that are concentrically wound about a central axis outside the processing chamber 100; and a dielectric window 105 provided at a part of a wall of the processing chamber 100 and configured to introduce electromagnetic field energy generated from the high frequency antenna 120 into the processing chamber 100.Type: ApplicationFiled: March 30, 2010Publication date: September 30, 2010Applicant: Tokyo Electron LimitedInventor: Chishio Koshimizu
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Patent number: 7789992Abstract: A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma generation area; a first channel fluidly communicating the first opening with the plasma generation area; a second channel fluidly communicating the second opening with the plasma generation area; a coil disposed on an outer surface of the first chamber and which generates a magnetic field to generate a plasma in the plasma generation area; and an acceleration part disposed within the first and second chambers and configured to separate the plasma into a positive ion and an electron, accelerate the positive ion and the electron, and discharge the positive ion and electron through the first and the second channels.Type: GrantFiled: May 1, 2006Date of Patent: September 7, 2010Assignee: Samsung Electronics Co., Ltd.Inventor: Won-tae Lee
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Patent number: 7780814Abstract: A plasma reactor for processing a workpiece in a reactor chamber having a wafer support pedestal within the chamber and process gas injection apparatus, an RF bias power generator coupled to the wafer support pedestal and having a bias frequency, a source power applicator, an RF source power generator having a source frequency and a coaxial cable coupled between the RF source power generator and the source power applicator includes a filter connected between the coaxial cable and the source power applicator that enhances uniformity of etch rate across the wafer and from reactor to reactor. The filter includes a set of reflection circuits coupled between the source power applicator and a ground potential and being tuned to, respectively, the bias frequency and intermodulation products of the bias frequency and the source frequency.Type: GrantFiled: July 8, 2005Date of Patent: August 24, 2010Assignee: Applied Materials, Inc.Inventors: John A. Pipitone, Kenneth D. Smyth, Mei Po (Mabel) Yeung
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Patent number: 7779783Abstract: A plasma processing apparatus includes a chamber, a dielectric top plate member disposed on an upper portion of the chamber and an antenna having a plurality of slots. The antenna is disposed on the top plate member and is in close contact with the top plate member. The top plate member includes a flat plate portion formed to face the substrate and a sidewall portion formed to extend from a peripheral region of the flat plate portion towards the substrate. The sides of the flat plate portion and the sidewall portion facing a plasma generation region have a curved surface extending between the flat plate portion and the sidewall portion and the sidewall portion has a thickness not smaller than ?g/4 but not greater than ?g, ?g being a wavelength of the microwave.Type: GrantFiled: August 12, 2003Date of Patent: August 24, 2010Assignee: Tokyo Electron LimitedInventors: Kiyotaka Ishibashi, Toshihisa Nozawa
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Patent number: 7757633Abstract: A magnetically enhanced plasma is produced with a permanent magnet assembly adjacent to a radio frequency (RF) biased wafer support electrode in a vacuum processing chamber of a semiconductor wafer processing apparatus. An annular peripheral region is provided on the wafer support around the perimeter of the wafer being processed. A magnet arrangement using a plurality of magnet rings forms a magnetic tunnel over the peripheral region at which the plasma is generated away from the wafer. The magnetic field has components parallel to the substrate support surface over the annular peripheral region but is generally isolated from the wafer. Preferably, the magnetic field has a flat portion parallel to the support surface in the peripheral region. Plasma propagates by diffusion from the peripheral region across the wafer surface. The magnets can be manipulated to optimize plasma uniformity adjacent the substrate being processed.Type: GrantFiled: December 22, 2005Date of Patent: July 20, 2010Assignee: Tokyo Electron LimitedInventor: Derrek Andrew Russell
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Publication number: 20100147794Abstract: Plasma treatment apparatus and method for treatment of a surface of a substrate. A dielectric barrier discharge electrode structure is provided having a treatment space (5) and comprising a first electrode (2) and a second electrode (3), and a power supply (11) connected to the first electrode (2) and the second electrode (3) for generating an atmospheric pressure plasma in the treatment space (5). The plasma treatment apparatus further comprises a magnetic layer (6) provided on a surface of at least the first electrode (2). The first electrode (2) is arranged to receive, in operation, the substrate (1) to be treated and a mask device (7) in contact with the substrate (1), the mask device (7) interacting with the magnetic layer (6).Type: ApplicationFiled: February 1, 2008Publication date: June 17, 2010Inventors: Hindrik Willem De Vries, Bruno Alexander Korngold
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Patent number: 7686918Abstract: A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located.Type: GrantFiled: December 21, 2004Date of Patent: March 30, 2010Assignee: Tokyo Electron LimitedInventors: Hidenori Sato, Daisuke Hayashi