Ion Beam Sputter Deposition Patents (Class 204/192.11)
  • Patent number: 9339099
    Abstract: A skin removal device includes a housing having a handle portion, a drum assembly coupled to the handle portion and including a drum, the drum having an abrasive outer surface configured to abrade skin of a user during rotation of the drum, and an electromechanical drive system disposed at least partially within the housing and configured to rotate the drum. The drum assembly is moveable in a lateral direction relative to the handle portion to enable insertion and removal of the drum assembly.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: May 17, 2016
    Assignee: SOFT LINES INTERNATIONAL, LTD.
    Inventor: Wai Wah Yiu
  • Patent number: 9340854
    Abstract: A drilling motor and method of making a drill motor are disclosed. The drilling motor includes a stator having a bore therethrough and inner surface and a rotor having an outer surface configured to be disposed in the stator. The outer surface of the rotor comes in contact with the inner surface of the stator. At least one of the inner surface of the stator and the outer surface of the rotor includes a coating of a diamond-like carbon material.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: May 17, 2016
    Assignee: BAKER HUGHES INCORPORATED
    Inventors: Dan E. Scott, Chih Lin
  • Publication number: 20150147525
    Abstract: Methods for enabling or enhancing growth of carbon nanotubes on unconventional substrates. The method includes selecting an inactive substrate, which has surface properties that are not favorable to carbon nanotube growth. A surface of the inactive substrate is treated so as to increase a porosity of the same. CNTs are then grown on the surface having the increased porosity.
    Type: Application
    Filed: November 25, 2014
    Publication date: May 28, 2015
    Applicant: Government of the United States as Represented by the Secretary of the Air Force
    Inventors: Benji Maruyama, Gordon A. Sargent, Ahmad E. Islam
  • Patent number: 9034151
    Abstract: An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: May 19, 2015
    Assignee: International Business Machines Corporation
    Inventors: Shoichi Doi, Tatsuya Nishiwaki
  • Publication number: 20150129289
    Abstract: There are provided a printed circuit board and a method of manufacturing the same. The printed circuit board according to an exemplary embodiment of the present disclosure includes: a substrate; a metal root layer formed by injecting and depositing metal particles into and on the substrate; and a circuit layer formed on the metal root layer.
    Type: Application
    Filed: November 7, 2014
    Publication date: May 14, 2015
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Gun Woo Kim, Eung Suek Lee, Yoong Oh, Sung Uk Lee
  • Publication number: 20150125622
    Abstract: Systems and methods for high and ultra-high vacuum physical vapor deposition with in-situ magnetic field are disclosed herein. An exemplary method for depositing a film in an evacuated vacuum chamber can include introducing a sample into the vacuum chamber. The sample can be rotated. A magnetic field can be applied that rotates synchronously with the rotating sample. Atoms can be deposited onto the sample while the sample is rotating with the magnetic field to deposit a film while the magnetic field induces magnetic anisotropy in the film.
    Type: Application
    Filed: October 1, 2014
    Publication date: May 7, 2015
    Applicant: The Trustees of Columbia University in HIe City of
    Inventors: KENNETH L. SHEPARD, William E. Bailey, Noah Andrew Sturcken, Cheng Cheng, Sioan Zohar
  • Patent number: 8992740
    Abstract: An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: March 31, 2015
    Assignee: Fujikura Ltd.
    Inventors: Satoru Hanyu, Yasuhiro Iijima
  • Publication number: 20150077744
    Abstract: A nanostructured arrangement includes a substrate having a surface and comprising a metal and a nanostructured layer formed on the substrate surface by an ion beam. The nanostructured layer includes a plurality of hollow metal nanospheres. Each of the plurality of nanospheres includes a chemical compound formed from the metal of the substrate by the ion beam. An example of a nanostructured arrangement is a surface enhanced Raman scattering (SERS) sensor.
    Type: Application
    Filed: March 23, 2012
    Publication date: March 19, 2015
    Applicant: Wostec, Inc.
    Inventors: Valery K. Smirnov, Dmitry S. Kibalov
  • Publication number: 20150069667
    Abstract: Embodiments of present invention provide a method of forming nano-parts through vacuum coating technology. The method includes creating a set of openings in a substrate, the set of openings having a set of shapes that are complimentary to shapes of a set of nano-parts and the nano-parts having a size between 1 nm and 1000 nm; lining the set of openings with a thin layer of oleic acid of a single molecule thickness; depositing a metal-oxide material inside the set of openings to form the set of nano-parts; immersing the substrate together with the set of nano-parts in a solution; applying a supersonic vibration to the substrate via the solution causing the set of nano-parts to detach from the substrate; and separating the set of nano-parts from the substrate.
    Type: Application
    Filed: September 12, 2013
    Publication date: March 12, 2015
    Inventors: Yi Li, Jieran Li, Wen Lu
  • Publication number: 20150047970
    Abstract: In one embodiment, a method for forming an alkali resistant coating includes forming a first oxide material above a substrate and forming a second oxide material above the first oxide material to form a multilayer dielectric coating, wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali. In another embodiment, a method for forming an alkali resistant coating includes forming two or more alternating layers of high and low refractive index oxide materials above a substrate, wherein an innermost layer of the two or more alternating layers is on an alkali-contacting side of the alkali resistant coating, and wherein the innermost layer of the two or more alternating layers comprises at least one of: alumina, zirconia, and hafnia.
    Type: Application
    Filed: November 3, 2014
    Publication date: February 19, 2015
    Inventors: Thomas F. Soules, Raymond J. Beach, Scott C. Mitchell
  • Publication number: 20150037260
    Abstract: The invention provides a new apparatus (20) and method for producing entirely new types of nanoparticles exhibiting novel properties. The apparatus comprises a vacuum chamber (22) containing a gas and feed means (1) for feeding a liquid jet (26) into the chamber and through the gas. The invention extends to the new types of nanoparticles per se, and to uses of such nanoparticles in various biomedical applications, such as in therapy and diagnosis, as well as in opto-electronics.
    Type: Application
    Filed: February 28, 2013
    Publication date: February 5, 2015
    Inventors: Klaus Von Haeften, Gediminas Galinis
  • Publication number: 20150037568
    Abstract: A film is formed under vacuum by a step of purifying and/or flattening the base material (13) by irradiating the base material (13) with a gas cluster ion beam (4a); by a step of forming an intermediate layer film by evaporating/vaporizing an intermediate layer film forming material, allowing the evaporated/vaporized material to adhere to the surface of the base material (13), and irradiating the intermediate layer film forming material with a gas cluster ion beam (4a); and by evaporating/vaporizing a carbon film forming material containing a carbonaceous material containing substantially no hydrogen, and a boron material, allowing the evaporated/vaporized material to adhere to the surface of the intermediate layer film, and irradiating the carbon film forming material with a gas cluster ion beam (4a).
    Type: Application
    Filed: November 28, 2011
    Publication date: February 5, 2015
    Applicant: NOMURA PLATING CO., LTD.
    Inventors: Teruyuki Kitagawa, Shuhei Nomura
  • Patent number: 8921276
    Abstract: The phase transition temperature, at which the crystal lattice of LMO that constitutes an oxide layer as an intermediate layer or as a part of an intermediate layer becomes cubic, is lowered. A substrate for a superconducting wire rod includes an oxide layer (LMO layer (22)) which contains, as a principal material, a crystalline material represented by the compositional formula: Laz(Mn1?xMx)wO3+? (wherein M represents at least one of Cr, Al, Co or Ti, ? represents an oxygen non-stoichiometric amount, 0<w/z<2, and 0<x?1).
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: December 30, 2014
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Masayasu Kasahara, Hiroyuki Fukushima, Yoshikazu Okuno, Yuko Hayase
  • Publication number: 20140377693
    Abstract: A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle ? is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.
    Type: Application
    Filed: September 8, 2014
    Publication date: December 25, 2014
    Inventors: Yen-Cheng Lu, SHINN-SHENG YU, Anthony Yen
  • Publication number: 20140342102
    Abstract: In a system and method of depositing material on a substrate, a shadow mask, including one or more apertures therethrough, in intimate contact with the substrate is provided inside of a chamber or reactor. Material ejected from a solid target material is deposited on one or more portions of the substrate after passage through the one or more apertures of the shadow mask. Desirably, a target-to-substrate distance is within a mean free path length at a specified deposition pressure. Alternatively, an electric field acts on a process gas to create a plasma that includes ionized atoms or molecules of the material that are deposited on one or more portions of the substrate after passage through the one or more apertures of the shadow mask.
    Type: Application
    Filed: May 20, 2014
    Publication date: November 20, 2014
    Applicant: ADVANTECH GLOBAL, LTD
    Inventors: Thomas F. Ambrose, Byron B. Brocato, Jong Guang Pan
  • Publication number: 20140327876
    Abstract: An optical element has a substrate body made from transparent plastic and a coating having multiple layers. The coating includes a hard lacquer layer adjoining the substrate. The coating has a diffusivity ensuring the absorption of water molecules passing through the coating in the substrate and the release of water molecules from the substrate through the coating from an air atmosphere on that side of the coating facing away from the substrate with a flow density which, proceeding from the equilibrium state of the quantity of water molecules absorbed in the substrate in an air atmosphere at 23° C. and 50% relative humidity, brings the setting of the equilibrium state of the quantity of water molecules absorbed in the substrate in an air atmosphere at 40° C. and 95% relative humidity within an interval not more than 10 h longer than for setting this equilibrium under corresponding conditions with an identical uncoated substrate.
    Type: Application
    Filed: May 6, 2014
    Publication date: November 6, 2014
    Applicant: Carl Zeiss Vision International GmbH
    Inventors: Norbert Hugenberg, Markus Haidl, Bernhard von Blanckenhagen, Lothar Holz, Stefan Kraus, Frank Macionczyk, Michael Krause, Erwin Green, Karl-Heinz Winter, Thomas Gloege, Silvia Faul, Anja Petereit, Bin Peng, Joerg Puetz, Patrick Kiefer, Adalbert Hanssen, Michael Krieger, Andreas Neuffer, Marc Stroisch
  • Publication number: 20140322502
    Abstract: There is provided an antireflection coating having a band ranging from visible light to infrared (wavelength range from 400 nm to 1600 nm). The antireflection coating includes twelve layers formed by depositing a high refractive index material and a low refractive index material having a refractive index lower than the high refractive index material alternately and depositing an ultra-low refractive index material having a refractive index lower than the low refractive index material as the outermost layer. The first, third, fifth, seventh, ninth, and eleventh layers are formed by depositing the high refractive index material, the second, fourth, sixth, eighth, and tenth layers are formed by depositing the low refractive index material, and the twelfth layer is formed by depositing the ultra-low refractive index material, where the layers are numbered in order from the substrate side.
    Type: Application
    Filed: July 3, 2014
    Publication date: October 30, 2014
    Inventors: MASANORI KOYAMA, Kazuyuki Hosokawa
  • Publication number: 20140311892
    Abstract: Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm2 at the target surface, such that the material transitioning to the gas phase is ionized. Reactive gas flow is established and reacts with the material of the target surface. Voltage pulse duration is such that, during the pulse, the target surface where the current flows is at least partly covered most of the time with a compound composed of reactive gas and target material and, consequently, the target surface is in a first intermediate state, and this covering is smaller at the end of the voltage pulse than at the start and, consequently, the target surface is in a second intermediate state at the end of the voltage pulse.
    Type: Application
    Filed: November 23, 2012
    Publication date: October 23, 2014
    Inventor: Siegfried Krassnitzer
  • Patent number: 8864957
    Abstract: Thin films of vanadium oxide having exceptionally high metal-insulator transition properties are synthesized by RF sputtering. An Al2O3 substrate is placed in a sputtering chamber and heated to a temperature up to about 550 degrees Celsius. Ar and O2 gases are introduced into the sputtering chamber at the flow values of about 92.2 sccm and about 7.8 sccm respectively. A voltage is applied to create a plasma in the chamber. A sputtering gun with vanadium target material is ignited and kept at a power of about 250 W. The phase transition parameters of vanadium dioxide thin films, synthesized by RF sputtering, are modulated by exposing the vanadium dioxide thin film to UV (ultraviolet) radiation so as to induce a change in oxygen incorporation of the vanadium dioxide thin film.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: October 21, 2014
    Assignee: President and Fellows of Harvard College
    Inventors: Shriram Ramanathan, Dmitry Ruzmetov, Venkatesh Narayanamurti, Changhyun Ko
  • Patent number: 8852406
    Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: October 7, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Joon Baik, Jong Keuk Park, Wook Seong Lee
  • Publication number: 20140272291
    Abstract: A method for fabricating a hydrophilic aluminum surface includes: an activation step of preparing doped aluminum having an activated surface through doping treatment on a part or whole of an aluminum surface with applying reactive gas thereto; and a structure forming step of preparing a hydrophilic aluminum surface through oxidizing treatment on the doped aluminum to have nano-patterns comprising nano-protrusion structures on the aluminum surface. Hydrophobic aluminum can be fabricated into artificially hydrophilic or super-hydrophilic aluminum, and the hydrophilic aluminum surface body that does not have an aging effect and has long-lasting hydrophilicity can be provided.
    Type: Application
    Filed: March 11, 2014
    Publication date: September 18, 2014
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Myoung Woon MOON, Seong Jin KIM, Heon Ju LEE, Eu Sun YU, Tae Jun KO, Kyu Hwan OH, Kwang Ryeol LEE
  • Patent number: 8828625
    Abstract: A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle ? is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: September 9, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Anthony Yen
  • Publication number: 20140231242
    Abstract: An apparatus for treating a surface of an object comprises a vacuum chamber in which the object is intended to be placed, and means, in communication with the vacuum chamber, for treating the surface of the object, comprising at least two plasma generator. The apparatus also comprises means for controlling each generator independently of any other generator. These controlling means comprise means for activating/deactivating the generator. The invention also relates to a process for treating a surface of an object.
    Type: Application
    Filed: July 25, 2012
    Publication date: August 21, 2014
    Inventors: Marc Brassier, Frederic Moret, Frederic Bretagnol
  • Publication number: 20140216723
    Abstract: A slip component for a downhole tool has a bearing surface hard surface treated. The slip component, which can be a slip or other component of a slip mechanism used on a packer, bridge plug, or other downhole tool, is composed of a metallic base material such as magnesium, aluminum, an aluminum alloy, or a magnesium alloy. To hard surface treat the slip component, at least the bearing surface is positioned relative to an electro sparking apparatus. Using the electrosparking apparatus, an external layer is bonded at least on the bearing. In a further embodiment, an intermediate layer can be first bonded onto at least the bearing surface by ion sputtering an intermediate material onto the metallic base material of the slip component. Then, an external layer can be bonded at least on the intermediate layer by electrospark deposition.
    Type: Application
    Filed: February 7, 2013
    Publication date: August 7, 2014
    Inventor: Robert P. Badrak
  • Publication number: 20140216722
    Abstract: A slip component for a downhole tool has a bearing surface that is hard surface treated. The slip component, which can be a slip or other component of a slip mechanism used on a packer, bridge plug, or other downhole tool, is composed of a non-metallic base material, such as plastic, composite, or ceramic. To hard surface treat the slip component, at least the bearing surface is positioned relative to an ion sputtering apparatus. An intermediate layer is first bonded onto the bearing surface by ion sputtering an intermediate material onto the non-metallic base material of the slip component. Then, the bearing surface of the slip component is positioned relative to an electrosparking apparatus, which has an electrode composed of a selected external material for depositing on the slip component. Using the electrosparking apparatus, an external layer is bonded at least on the bearing surface.
    Type: Application
    Filed: February 7, 2013
    Publication date: August 7, 2014
    Inventor: Robert P. Badrak
  • Publication number: 20140174909
    Abstract: A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.
    Type: Application
    Filed: December 23, 2013
    Publication date: June 26, 2014
    Applicant: TRUMPF Huettinger Sp. z.o.o.
    Inventors: Andrzej Klimczak, Pawel Ozimek, Rafal Bugyi
  • Patent number: 8748845
    Abstract: Ion sources, systems and methods are disclosed.
    Type: Grant
    Filed: January 24, 2012
    Date of Patent: June 10, 2014
    Assignee: Carl Zeiss Microscopy, LLC
    Inventors: Billy W. Ward, John A. Notte, Louis S. Farkas, Randall G. Percival, Raymond Hill, Klaus Edinger, Lars Markwort, Dirk Aderhold, Ulrich Mantz
  • Patent number: 8747630
    Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: June 10, 2014
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Timothy A. Gessert, Yuki Yoshida, Timothy J. Coutts
  • Patent number: 8742337
    Abstract: A mass spectrometer includes an Electron Impact (“EI”) or a Chemical Ionization (“CI”) ion source, and the ion source includes a first coating or surface. The first coating or surface is formed of a metallic carbide, a metallic boride, a ceramic or DLC, or an ion-implanted transition metal.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: June 3, 2014
    Assignee: Micromass UK Limited
    Inventors: Gordon A. Jones, David S. Douce, Amir Farooq
  • Patent number: 8734621
    Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
    Type: Grant
    Filed: January 16, 2007
    Date of Patent: May 27, 2014
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Timothy A. Gessert, Yuki Yoshida, Timothy J. Coutts
  • Patent number: 8728283
    Abstract: Film formation conditions are determined in accordance with relationships among a film formation temperature Ts (° C.), a difference Vs?Vf (V), which is the difference between a plasma potential Vs (V) in the plasma at the time of the film formation and a floating potential Vf (V), and characteristics of the formed film. For a piezoelectric film containing at least one kind of Pb-containing perovskite type oxide, the film formation conditions should preferably be determined within a range such that Formulas (1) and (2) shown below are satisfied: Ts(° C.)?400??(1) ?0.2Ts+100<Vs?Vf(V)<?0.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: May 20, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Takamichi Fujii, Yukio Sakashita
  • Patent number: 8709267
    Abstract: Methods for patterning material layers, which may be implemented in forming integrated circuit device features, are disclosed. In an example, a method includes forming a first resist layer over a material layer; forming a second resist layer over the first resist layer; forming an opening that extends through the second resist layer and the first resist layer to expose the material layer, wherein the opening has a substantially constant width in the second resist layer and a tapered width in the first resist layer; and performing a tilt-angle deposition process to form a feature over the exposed material layer.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: April 29, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chwen Yu, Fei-Gwo Tsai, Kai-Wen Cheng
  • Publication number: 20140110244
    Abstract: Provided is a supersonic beam apparatus including a nozzle for injecting a gas at a supersonic velocity into a vacuum; a skimmer arranged at a downstream of the nozzle; and an ionization part for ionizing a particle in a supersonic beam formed by the skimmer from the gas injected from the nozzle to form a cluster ion beam, wherein a set position of the skimmer is one of a maximum position where an amount of cluster generation in a relationship of the amount of cluster generation with respect to a distance between the nozzle and the skimmer is maximized and a position closer to the nozzle than the maximum position.
    Type: Application
    Filed: October 9, 2013
    Publication date: April 24, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Kota Iwasaki
  • Publication number: 20140090973
    Abstract: The invention relates to a device for depositing a selected material on a substrate by means of ion beam sputtering, which include a plurality of targets of a selected material, each of which is bombarded by an ion beam, the lateral dimensions of each of the ion beams being less than one tenth of the lateral dimensions of the substrate.
    Type: Application
    Filed: February 6, 2012
    Publication date: April 3, 2014
    Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Pascal Sortais, Thierry Lamy
  • Publication number: 20140083840
    Abstract: A film deposition apparatus includes: a chamber including a chamber wall that is formed with a window; a target holder disposed in the chamber for supporting a target; a radio frequency power device; a pole plate unit disposed in the chamber and including a first pole plate that is electrically connected to the radio frequency power device, and a second pole plate for supporting the substrate, the first and second pole plates being disposed at two opposite sides of the target holder; a vacuum device to extract air from the chamber; and a pulsed laser device to generate a laser beam capable of bombarding the target through the window.
    Type: Application
    Filed: September 13, 2012
    Publication date: March 27, 2014
    Inventors: Kuei-Sen HSIAO, Yu-Chueh Chou, Shih-Hao Huang
  • Publication number: 20140061028
    Abstract: The invention provides certain embodiments that involve sputtering techniques for applying a mixed oxide film comprising silica and titania. In these embodiments, the techniques involve sputtering at least two targets in a common chamber (e.g., in a shared gaseous atmosphere). A first of these targets includes silicon, while a second of the targets includes titanium. Further, the invention provides embodiments involving a substrate bearing a hydrophilic coating, which can be deposited by sputtering or any other suitable thin film deposition technique. The invention also provides techniques and apparatuses useful for depositing a wide variety of coating types. For example, the invention provides thin film deposition technologies in which sputtering apparatuses or other thin film deposition apparatuses are employed.
    Type: Application
    Filed: October 22, 2013
    Publication date: March 6, 2014
    Applicant: Cardinal CG Company
    Inventor: Klaus Hartig
  • Patent number: 8658004
    Abstract: A system includes a collimated beam source within a vacuum chamber, a condensable barrier gas, cooling material, a pump, and isolation chambers cooled by the cooling material to condense the barrier gas. Pressure levels of each isolation chamber are substantially greater than in the vacuum chamber. Coaxially-aligned orifices connect a working chamber, the isolation chambers, and the vacuum chamber. The pump evacuates uncondensed barrier gas. The barrier gas blocks entry of atmospheric vapor from the working chamber into the isolation chambers, and undergoes supersonic flow expansion upon entering each isolation chamber. A method includes connecting the isolation chambers to the vacuum chamber, directing vapor to a boundary with the working chamber, and supersonically expanding the vapor as it enters the isolation chambers via the orifices. The vapor condenses in each isolation chamber using the cooling material, and uncondensed vapor is pumped out of the isolation chambers via the pump.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: February 25, 2014
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Leonard M. Weinstein, Karen M. Taminger
  • Patent number: 8653474
    Abstract: The present invention provides a method for extracting a charged particle beam from a charged particle source. A set of electrodes is provided at the output of the source. The potentials applied to the electrodes produce a low-emittance growth beam with substantially zero electric field at the output of the electrodes.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: February 18, 2014
    Assignee: FEI Company
    Inventors: Roderick Boswell, Orson Sutherland
  • Publication number: 20140043585
    Abstract: A method for adhering a hard coat layer to an optical substrate is provided, includes providing an optical substrate, depositing a silicon oxide film on the optical substrate using vacuum deposition, applying a hard coat layer to the silicon oxide film for forming a hard-coated optical substrate, and curing the hard coat layer to form the hard-coated optical substrate. A hard-coated optical substrate includes an optical substrate, a hard coat layer, and a silicon oxide film intermediate the optical substrate and hard coat layer.
    Type: Application
    Filed: August 7, 2012
    Publication date: February 13, 2014
    Inventor: Brian C. Wilson
  • Publication number: 20140042014
    Abstract: In a method for using a sputtering target, by making an ion collide with the sputtering target, a sputtered particle whose size is greater than or equal to 1/3000 and less than or equal to 1/20, preferably greater than or equal to 1/1000 and less than or equal to 1/30 of a crystal grain is generated.
    Type: Application
    Filed: July 30, 2013
    Publication date: February 13, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei YAMAZAKI
  • Publication number: 20140038080
    Abstract: There is disclosed articles for and methods of confining volatile materials in the void volume defined by crystalline void materials. In one embodiment, the hydrogen isotopes are confined inside carbon nanotubes for storage and the production of energy. There is also disclosed a method of generating various reactions by confining the volatile materials inside the crystalline void structure and releasing the confined volatile material. In this embodiment, the released volatile material may be combined with a different material to initiate or sustain a chemical, thermal, nuclear, electrical, mechanical, or biological reaction.
    Type: Application
    Filed: October 9, 2013
    Publication date: February 6, 2014
    Inventors: William K. Cooper, James F. Loan, Christopher H. Cooper
  • Publication number: 20140014497
    Abstract: An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle ? relative to each other. The angle ? is selected to be substantially equal the supplement of the angle ?? formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.
    Type: Application
    Filed: July 16, 2012
    Publication date: January 16, 2014
    Applicant: VEECO INSTRUMENTS, INC.
    Inventors: Boris L. Druz, Vincent Ip, Adrian Devasahayam
  • Publication number: 20140014498
    Abstract: The present invention provides a method for producing a metal foil with an electric resistance layer which can stably obtain electric characteristics of a resistive element, suppress peeling between the metal foil and the electric resistance layer disposed on the metal foil, and realize a high sheet resistance value and the method includes forming an electric resistance layer on a metal foil having a 10-point average roughness Rz, which is measured by the optical method according to 1 ?m or less and whose surface is treated by irradiation with ion beams at an ion beam intensity of 0.70 to 2.10 sec·W/cm2 by vapor deposition while applying oxygen as an atmospheric gas using a sputtering target containing nickel, chromium, and silicon.
    Type: Application
    Filed: March 28, 2012
    Publication date: January 16, 2014
    Applicant: JX Nippon Mining & Metals Corporation
    Inventor: Toshio Kurosawa
  • Patent number: 8602289
    Abstract: A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.
    Type: Grant
    Filed: September 6, 2007
    Date of Patent: December 10, 2013
    Assignees: Mitsubishi Heavy Industries, Ltd., National Institute of Advanced Industrial Science and Technology
    Inventors: Takayuki Goto, Jun Utsumi, Kensuke Ide, Hideki Takagi, Masahiro Funayama
  • Patent number: 8586169
    Abstract: There are provided a thermal barrier coating material and a thermal barrier coating member that can suppress spalling when used at a high temperature and have a high thermal barrier effect, a method for producing the same, a turbine member coated with a thermal barrier coating, and a gas turbine. The thermal barrier coating member comprises a heat resistant substrate, a bond coat layer formed thereon, and a ceramic layer formed further thereon, wherein the ceramic layer comprises an oxide which consists of an oxide represented by the general formula A2Zr2O7 doped with a predetermined amount of CaO or MgO and has 10 volume % or more of a pyrochlore type crystal structure, where A represents any of La, Nd, Sm, Gd, and Dy.
    Type: Grant
    Filed: October 6, 2006
    Date of Patent: November 19, 2013
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Katsumi Namba, Taiji Torigoe, Ikuo Okada, Kazutaka Mori, Ichiro Nagano, Yutaka Kawata, Koji Takahashi
  • Publication number: 20130277550
    Abstract: A sampling cone of a mass spectrometer is disclosed having a metallic boride coating such as titanium diboride.
    Type: Application
    Filed: June 20, 2013
    Publication date: October 24, 2013
    Inventors: Gordon A. Jones, David S. Douce, Amir Farooq
  • Patent number: 8562794
    Abstract: To provide a process for producing an EUV mask blank, capable of reducing foreign matter attributable to a sputtering target, and a process for producing a substrate with a functional film for such a mask blank.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: October 22, 2013
    Assignee: Asahi Glass Company, Limited
    Inventor: Junichi Kageyama
  • Publication number: 20130265572
    Abstract: An optical component includes a substrate and a fluorine-doped thin film formed on the substrate. This fluorine-doped thin film is dense, and thus very low absorbing and insensitive to various vacuum, temperature, and humidity conditions. This dense film has a high refractive index, which remains stable irrespective of environmental conditions. The fluorine-doped thin film can advantageously ensure low scattering, low reflectance, and high transmittance. Moreover, the fluorine-doped thin film is damage resistant to incident radiation density. The fluorine-doped thin film may be a fluorine-doped silicon oxide film having a thickness of approximately 1-10 nm and a fluorine concentration of 0.1% to 5%.
    Type: Application
    Filed: April 2, 2013
    Publication date: October 10, 2013
    Applicant: KLA-Tencor Corporation
    Inventor: Gildardo Delgado
  • Publication number: 20130259207
    Abstract: There is provided a target for an X-ray generator, including: a holder part made of an electrically conductive material and having an opening part; a diamond plate air-tightly joined to the holder part so as to close the opening part; a thin film target provided on a surface of the diamond plate, with its outer peripheral part extending to the holder part to be electrically connected to the holder part, wherein the holder part is configured to be electrically connected to a power supply of the X-ray generator, and the diamond plate is incorporated into the X-ray generator with one side disposed in a vacuum atmosphere where the thin film target is formed, and an opposite side thereto disposed at a side where the diamond plate is brought into thermal contact with a refrigerant and cooled.
    Type: Application
    Filed: February 5, 2013
    Publication date: October 3, 2013
    Applicant: RIGAKU CORPORATION
    Inventors: Kazuhiko OMOTE, Kazuaki SHIMIZU, Naohisa OSAKA
  • Patent number: 8524051
    Abstract: A coated article is provided that may be heat treated in certain example embodiments. A graded layer (e.g., contact layer or other suitable layer) is formed by initially sputter-depositing a layer, and thereafter ion beam treating the sputter-deposited layer with at least reactive gas ions in order to form a graded layer. In certain example embodiments, the result is a coated article that has improved visible transmission and/or durability, without sacrificing optional heat treatability.
    Type: Grant
    Filed: May 18, 2004
    Date of Patent: September 3, 2013
    Assignees: Centre Luxembourg de Recherches pour le Verre et al Ceramique S. A. (C.R.V.C.), Guardian Industries Corp.
    Inventors: Jens-Peter Muller, Vijayen S Veerasamy