Ion Beam Sputter Deposition Patents (Class 204/192.11)
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Publication number: 20100155224Abstract: Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition.Type: ApplicationFiled: October 20, 2009Publication date: June 24, 2010Applicant: UNITED TECHNOLOGIES CORPORATIONInventors: Igor V. Belousov, Anatoly I. Kuzmichev, Vladimir Biber, Robert L. Memmen
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Publication number: 20100151797Abstract: A radio-frequency device comprises magneto-dielectric elements. At least one of these elements comprises a composite thin film (10). This film (10) comprises a magnetic material (16, 18) offering permeability above 10 at 1 GHz and a dielectric material (12, 22) offering permittivity above 10 at 1 GHz.Type: ApplicationFiled: October 16, 2009Publication date: June 17, 2010Applicants: Commissariat A L'Energie Atomique, Centre National De La Recherche ScientifiqueInventors: Bernard VIALA, Evangeline Benevent, Christoph Dubarry, Kévin Garello
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Publication number: 20100151260Abstract: The invention relates to a method of coating a cemented carbide or cermet substrate body by means of PVD, in which the fully sintered substrate body is subjected without further intermediate treatment before PVD coating to a blasting treatment using a particulate blasting agent until the zone close to the surface of the substrate body has a residual stress which is at least essentially of the same magnitude as the residual stress present in the single or first applied PVD layer. The invention further relates to such a coated cemented carbide or cermet body, in particular in the form of a cutting tool.Type: ApplicationFiled: November 7, 2006Publication date: June 17, 2010Inventors: Hartmut Westphal, Hendrikus Van Den Berg
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Publication number: 20100139851Abstract: A method for making a heater is provided. A carbon nanotube structure is made, and a first electrode and a second electrode are provided. The first and second electrodes are electrically connected to the carbon nanotube structure.Type: ApplicationFiled: July 30, 2009Publication date: June 10, 2010Applicants: Tsinghua University, HON HAI Precision Industry CO., LTD.Inventors: Chen Feng, Kai Liu, Ding Wang, Kai-Li Jiang, Chang-Hong Liu, Shou-Shan Fan
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Patent number: 7722966Abstract: Nano-composite materials are disclosed. An exemplary method of producing a nano-composite material may comprise co-sputtering a transition metal and a refractory metal in a reactive atmosphere. The method may also comprise co-depositing a transition metal and a refractory metal composite structure on a substrate. The method may further comprise thermally annealing the deposited transition metal and refractory metal composite structure in a reactive atmosphere.Type: GrantFiled: May 11, 2005Date of Patent: May 25, 2010Assignee: Alliance for Sustainable Energy, LLCInventors: Se-Hee Lee, C. Edwin Tracy, J. Roland Pitts
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Publication number: 20100108636Abstract: A tool for use in fabricating an electronic component includes a plurality of processing modules and a transfer chamber in communication with each of the plurality of processing modules. The transfer chamber includes a component for transferring a structure to each of the plurality of processing modules. The plurality of processing modules and the transfer chamber are sealed from the surrounding environment and are under a vacuum. The plurality of processing modules includes a first module configured to perform a first process on the structure and a second module configured to perform a second process on the structure. The first process includes performing at least one shaping operation on the structure.Type: ApplicationFiled: June 29, 2009Publication date: May 6, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Xilin Peng, Jiaoming Qiu, Yonghua Chen, Michael Christopher Kautzky, Mark Thomas Kief
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Publication number: 20100108494Abstract: A metallic nanoparticle coated microporous substrate, the process for preparing the same and uses thereof are described.Type: ApplicationFiled: January 11, 2010Publication date: May 6, 2010Inventors: DONALD J. MCCLURE, Mario A. Perez
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Patent number: 7709062Abstract: A hole in a sample from which a sample piece has been extracted with a focused ion beam is filled at high speed using ion beam gas assisted deposition. A method of filling the hole by using the ion beam includes a step of irradiating the hole formed in a face of the sample with the ion beam to thereby form an ion beam gas-assisted deposition layer in the hole. The ion beam gas-assisted deposition layer is formed in the hole while controlling the area to which the ion beam is irradiated so as to cause the ion beam to fall on a part of a side wall of the hole and to not fall on another part of the side wall in an area scanned with the ion beam. The filled hole may then be covered with a protective film.Type: GrantFiled: December 19, 2002Date of Patent: May 4, 2010Assignee: Hitachi High-Technologies CorporationInventors: Hiroyasu Shichi, Muneyuki Fukuda, Isamu Sekihara, Satoshi Tomimatsu, Kaoru Umemura
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Publication number: 20100101419Abstract: [Object] To provide a hydrogen separation apparatus provided with an independent hydrogen permeable membrane and capable of suppressing or preventing deformation of the hydrogen permeable membrane, and a production process therefor. [Solving Means] A hydrogen separation apparatus includes a porous support member, an independent hydrogen permeable membrane disposed adjacent to the porous support member, and a joining member for joining the porous support member and the hydrogen permeable membrane.Type: ApplicationFiled: June 5, 2008Publication date: April 29, 2010Inventors: Maki Hoshino, Takao Izumi
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Publication number: 20100092125Abstract: An optical structure on an optical fiber and a method of fabrication is provided. The optical structure includes an end of an optical fiber and a layer formed on the end of the optical fiber. The layer comprises one or more first portions having a first optical pathlength in a direction perpendicular to the layer and one or more second portions having a second optical pathlength in the direction perpendicular to the layer, the second optical pathlength different from the first optical pathlength.Type: ApplicationFiled: October 8, 2009Publication date: April 15, 2010Applicant: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Onur Kilic, Michel J.F. Digonnet, Gordon S. Kino, Olav Solgaard, Shrestha Basu Mallick, Onur Can Akkaya
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Patent number: 7691434Abstract: A method of fabricating a bias structure of a magnetoresistive read head for a magnetoresistive sensor stack formed on a substrate includes forming an underlayer and forming a bias layer over the underlayer. The method further includes forming a dusting layer directly below at least one of the underlayer or the bias layer and between the bias layer and the magnetoresistive sensor stack. The dusting layer includes discontinuous, nano-sized islands.Type: GrantFiled: January 9, 2008Date of Patent: April 6, 2010Assignee: Western Digital (Fremont), LLCInventors: Wei Zhang, Yingjian Chen, Satoru Araki, Mohamad T. Krounbi
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Publication number: 20100078311Abstract: An aluminum fluoride thin film deposition method includes the steps of (a) putting a substrate and a pure aluminum target in a plasma sputtering system, (b) applying argon plasma to the plasma sputtering system to remove impurities from the aluminum target, (c) applying CF4 gas, which is stable at room temperature under the atmospheric pressure, to the plasma sputtering system to bombard the aluminum target with energetic ions and to have aluminum atoms be ejected from the aluminum target and fluorinated so that a thin-film coating of aluminum fluoride is deposited on the surface of the substrate.Type: ApplicationFiled: September 27, 2008Publication date: April 1, 2010Inventors: Cheng-Chung LEE, Bo-Huei Liao, Ming-Chung Liu
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Publication number: 20100065417Abstract: A method for producing a superconducting conductor is disclosed, including providing a substrate, depositing a buffer film having a biaxial texture to overlie the substrate by reactive sputtering, and depositing a superconducting layer to overlie the buffer film. Deposition of the buffer film is carried out by exposing the substrate along a deposition zone to a material plume generated by bombarding a target in the presence of a magnetic field, the deposition zone having a length of at least 1.0 m. The assist ions may be generated from a gridless ion source. The buffer film may have a biaxial texture having an out-of-plane crystallographic texture represented by a mosaic spread of not greater than 30°.Type: ApplicationFiled: November 28, 2005Publication date: March 18, 2010Applicant: SUPERPOWER, INC.Inventor: Venkat Selvamanickam
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Patent number: 7676904Abstract: A method of manufacturing a GMR, TMR or CPP GMR sensor having a smooth interface between magnetic and non-magnetic layers to improve sensor performance by exposing a layer to a low energy ion beam prior to depositing a subsequent layer.Type: GrantFiled: July 30, 2004Date of Patent: March 16, 2010Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Phong V. Chau, James Mac Freitag, Mustafa Michael Pinarbasi, Hua Ai Zeng
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Publication number: 20100059362Abstract: Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may be comprise disposing the solar cell downstream of an ion source; disposing a mask between the ion source and the solar cell, the mask including a front surface, a back surface, and at least one aperture extending in an aperture direction from the front surface to the back surface; and directing ions from the ion source to the solar cell along an ion beam path and through the at least one aperture of the mask, where the ion beam path may be non-parallel relative to the aperture direction.Type: ApplicationFiled: September 9, 2009Publication date: March 11, 2010Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventor: Steven Anella
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Publication number: 20100034660Abstract: In a part for a rotary machine, a ceramic hard film is formed on a surface of a base material, the density of droplets which exist in a surface of the ceramic hard film is set to be within 1000 pieces/mm2, and the density of droplets whose mean particle diameter is 1 ?m or less is set to be within 550 pieces/mm2. A method for manufacturing the part of a rotary machine is a method for forming the ceramic hard film by at least an ion plating method or a sputtering method.Type: ApplicationFiled: January 27, 2009Publication date: February 11, 2010Inventors: Masaki Kawano, Toyoaki Yasui, Yuya Konno, Kyoichi Ikeno
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Publication number: 20100032288Abstract: The present invention relates, in general, to shoes for measuring the quantity of motion and a method of measuring the quantity of motion using the shoes and, more particularly, to artificial intelligence shoes, in which various numerical values (calorie consumption, body fat, and a pulse), measured by a walking sensor (23), a body fat measurement unit, and a pulse sensor (21) mounted in a shoe body, are displayed in real time on a display unit (32), so that a user can periodically check his or her quantity of motion, and in which calorie consumption and body fat are calculated on the basis of the user's body conditions, so that the precision thereof is high, and such quantity of motion numerical values can be transmitted to various types of external devices, thus enabling the user to periodically manage the quantity of motion thereof.Type: ApplicationFiled: October 18, 2006Publication date: February 11, 2010Applicants: Korea Atomic Energy Research Institute, Korea Hydro and Nuclear Power Co., LtdInventors: Jaewon Park, Chang-Kue Park, Jonghwa Chang, Byungho Choi, Yongwan Kim
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Publication number: 20100025228Abstract: A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.Type: ApplicationFiled: December 18, 2007Publication date: February 4, 2010Inventors: Aurélie Tauzin, Jérôme Dechamp, Frédéric Mazen, Florence Madeira
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Publication number: 20100028641Abstract: A coating includes a first layer of a ceramic alloy and a second layer disposed on the first layer and including carbon. The coating has a hardness of from 10 to 20 GPa and a coefficient of friction of less than or equal to 0.12. A method of coating a substrate includes cleaning the substrate, forming the first layer on the substrate, and depositing the second layer onto the first layer to thereby coat the substrate.Type: ApplicationFiled: June 29, 2009Publication date: February 4, 2010Applicant: Eaton CorporattionInventors: Dong Zhu, Robert Milner, Alaa AbdelAzim Elmoursi
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Publication number: 20100012480Abstract: The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.Type: ApplicationFiled: July 15, 2008Publication date: January 21, 2010Applicant: Applied Materials, Inc.Inventors: John C. Forster, Daniel J. Hoffman, John A. Pipitone, Xianming Tang, Rongjun Wang
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Publication number: 20100007937Abstract: In any manufacturing sequence for making a lithium ion-switching device, lithium has to be introduced at some stage into the device. An electrode inside the device is filled and depleted with lithium through an ion conductor at every use cycle of the device. Prior-art methods to introduce the lithium are: direct sputtering of lithium on the electrode, or electrochemically loading the electrode in an electrochemical cell, or indirectly loading the electrode after an ion conductor has been deposited on top of the electrode and still other methods. The inventive method disclosed makes such a separate lithiation step obsolete. The lithium is introduced at the same time as the ion-conductor is put on the electrode. This can be achieved by using an oxygen super-stoichiometric compound for the electrode.Type: ApplicationFiled: October 31, 2007Publication date: January 14, 2010Inventors: Edy Widjaja, Gerdy Delporte
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Patent number: 7641998Abstract: An electrically conductive separator element and assembly for a fuel cell which comprises an electrically conductive substrate having a monoatomic layer coating overlying the substrate. The monatomic layer coating may comprise an electrically conductive material, for example, a noble metal, desirably Ru, Rh, Pd, Ag, Ir, Os and preferably Au. Methods of making such separator elements and assemblies are also provided.Type: GrantFiled: September 20, 2006Date of Patent: January 5, 2010Assignee: GM Global Technology Operations, Inc.Inventors: Gayatri Vyas, Mahmoud H. Abd Elhamid, Youssef M. Mikhail
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Publication number: 20090321247Abstract: A method is provided of operating a deposition system to deposit coating material into high aspect ratio nano-sized features on a patterned substrate that enhances sidewall coverage compared to field area and bottom surface coverage while minimizing or eliminating overhang. The method includes performing a process step with a gross field area deposition rate of about 25 to 70 nm/min and simultaneously etching the barrier layer to establish a net field area deposition rate of about 5 to 40 nm/min. The method may also include first performing a protective layer deposition step with a field area deposition rate of about 5 to 20 nm/min without etching the underlying surface then performing a surface modification step with gross deposition and simultaneous etching at a field modification net deposition rate of about ?10 to +40 nm/min.Type: ApplicationFiled: September 8, 2009Publication date: December 31, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Frank M. Cerio, JR., Jacques Faguet, Bruce D. Gittleman, Rodney L. Robison
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Publication number: 20090297804Abstract: The present invention relates to dielectric ceramics, thin and/or thick layers produced therefrom and a method for the production thereof and the use of the dielectrics and of the thin and/or thick layers.Type: ApplicationFiled: April 16, 2007Publication date: December 3, 2009Inventors: Florian Paul, Jürgen Hausselt, Joachim Binder, Hans-Joachim Ritzhaupt-Kleissl, Andre Giere, Patrick Scheele, Rolf Jakoby
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Publication number: 20090297951Abstract: Disclosed is anode for use in a lithium ion secondary battery. The anode includes an anode current collector and an anode active material arranged thereon, in which the anode active material contains amorphous carbon and at least one metal dispersed in the amorphous carbon, and the at least one metal is selected from: 30 to 70 atomic percent of Si; and 1 to 40 atomic percent of Sn. The anode gives a lithium ion secondary battery that has a high charge/discharge capacity and is resistant to deterioration of its anode active material even after repetitive charge/discharge cycles.Type: ApplicationFiled: April 16, 2009Publication date: December 3, 2009Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Shoo KATSURA, Jun Hisamoto, Toshiki Sato, Jun Suzuki, Shinichi Tanifuji
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Publication number: 20090288942Abstract: A method and apparatus for increasing adhesion of particles ejected from a substrate being sputtered to interior surfaces of a vacuum chamber containing the substrate. The method includes: forming a viscous coating on a at least some regions of interior surfaces of the vacuum chamber, the viscous coating having a vapor pressure of no greater than 1/1000 of a nominal operating pressure of the vacuum chamber, the vapor pressure measured at a maximum operating temperature of the interior surfaces of the vacuum chamber that will be reached when the substrate is being bombarded by ions generated in and extracted from a plasma; and bombarding the substrate with the ions and capturing at least some of the ejected particles in the viscous coating.Type: ApplicationFiled: May 20, 2008Publication date: November 26, 2009Inventor: Scott Arthur Cummings
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Publication number: 20090246400Abstract: An ion flux is directed to a carbon nanotube to permanently shape, straighten and/or bend the carbon nanotube into a desired configuration. Such carbon nanotubes have many properties that make them ideal as probes for Scanning Probe Microscopy and many other applications.Type: ApplicationFiled: September 29, 2005Publication date: October 1, 2009Inventor: Ramsey M. Stevens
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Publication number: 20090242385Abstract: A method for depositing a metal-containing film on a substrate using an inductively coupled (ICP) physical vapor deposition (PVD) system. The ICP PVD deposition is performed under process conditions that thermalize neutral sputtered metal atoms by collisions with a process gas and minimize or eliminate exposure of ions to the substrate.Type: ApplicationFiled: March 28, 2008Publication date: October 1, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Rodney L. Robison, Frank M. Cerio, JR.
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Publication number: 20090242387Abstract: The claimed invention relates to a process for producing an optical material for EUV lithography, wherein the optical material contains a silica glass having a TiO2 concentration of from 3 to 12 mass % and a hydrogen molecule content of less than 5×1017 molecules/cm3 in the glass. The process including coating a multilayer film on the silica glass by ion beam sputtering.Type: ApplicationFiled: May 14, 2009Publication date: October 1, 2009Applicant: ASAHI GLASS CO., LTD.Inventors: Akio KOIKE, Yasutomi Iwahashi, Noriaki Shimodaira, Shinya Kikugawa, Naoki Sugimoto
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Publication number: 20090242386Abstract: A system of the present disclosure has a particle source that generates an ion beam and a vacuum chamber that houses a polymer film. The particle source bombards the polymer film with the ion beam. The system further has a controller that controls the particle source based upon an amount of the gas detected within the vacuum chamber.Type: ApplicationFiled: March 27, 2009Publication date: October 1, 2009Inventors: Renato Amaral Minamisawa, Robert Lee Zimmerman, Daryush Ila
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Publication number: 20090236217Abstract: A capillaritron ion beam sputtering system and a thin film production method are disclosed. By utilizing reactive capillaritron ion beam sputtering deposition, argon and oxygen are passed through a capillaritron ion source simultaneously. Argon is being ionized and accelerated by a voltage to bombard a zinc target and create zinc atoms, while oxygen atoms are created at the same time. Zinc atom and oxygen atom are combined to form ZnO to deposit on a substrate. The stoichiometric properties, deposition rate, transmission properties, surface roughness and film density of the as-deposited film can be altered by adjusting capillaritron ion beam energy and oxygen partial pressure. Using preferred processing parameters, the root-mean-square surface roughness of the as-deposited film can be smaller than 1.5 nm, while the transmission coefficient at visible range can be greater than 80%.Type: ApplicationFiled: January 22, 2009Publication date: September 24, 2009Applicant: National Taiwan University of Science and TechnologyInventors: Liang-chiun Chao, Chung-chi Liau, Fu-chieh Tsai
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Publication number: 20090232864Abstract: A method for applying a bioactive, tissue-compatible layer onto a shaped article includes providing, as a target material, a bioactive glass ceramic having a S53P4 composition, cleaning a shaped article and activating a surface of the shaped article with ions. The Shaped article is exposed to a bioactive glass ceramic beam pulse ablated by a pulsed electron-beam ablation of the bioactive glass ceramic target material so as to deposit a bioactive glass ceramic layer having a thickness ranging from 1 ?m to 10 ?m on the surface of the shaped article. A respective pulse frequency of the at least one of: 1) an electron pulse of the pulse electron beam abalation, and 2) the bioactive glass ceramic beam pulse, is controlled. Prior to an implantation, so as to avoid an initial cytotoxicity, at least one of the following is performed: a) an exposure of the article at least the times to 24-hour contact with at least one of a culture medium (SBL), a de-mineralized water, and a 0.Type: ApplicationFiled: May 15, 2007Publication date: September 17, 2009Applicant: Forschungszentrum Karlsruhe GmbHInventor: Christoph Schultheiss
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Publication number: 20090226735Abstract: Vacuum deposition process for depositing at least one thin film on a surface portion of a substrate, characterized in that: at least one sputtering species that is chemically inactive or active with respect to a material to be sputtered is selected; a collimated beam of ions comprising predominantly said sputtering species is generated using at least one linear ion source positioned within an installation of industrial size; said beam is directed onto at least one target based on the material to be sputtered; and at least one surface portion of said substrate is positioned so as to face said target in such a way that said material sputtered by the ion bombardment of the target or a material resulting from the reaction of said sputtered material with at least one of the sputtering species is deposited on said surface portion.Type: ApplicationFiled: April 15, 2005Publication date: September 10, 2009Applicant: SAINT-GOBAIN GLASS FRANCEInventors: Nicolas Nadaud, Eric Mattman
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Publication number: 20090211896Abstract: The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (12). The ion source according to the present invention further comprises a cathode (40) arranged to emit electrons into the arc chamber; an electrode (44) positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources (76) arranged to bias the electrode; and a voltage potential adjuster (82) operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.Type: ApplicationFiled: March 22, 2006Publication date: August 27, 2009Inventors: Andrew Stephen Devaney, Richard David Goldberg, Christopher Burgess, David George Armour, David Kirkwood
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Publication number: 20090200264Abstract: This method for making a nano-contact on a spin valve for the purposes of constituting a radio-frequency oscillator, consists, after deposition of the magnetic stack constituting the spin valve on a lower electrode in depositing on said magnetic stack a metal layer known as a “barrier” layer; in depositing on this “barrier” layer another metal layer; in depositing locally on this metal layer a hard mask; in subjecting the assembly to a first selective etching step of the metal layer constituting the injector through the hard mask, said metal layer being over-etched during this step under the hard mask in order to give the nano-contact its final dimension; in subjecting the assembly so obtained to a second selective etching step, able to induce the partial removal of the barrier layer and of the magnetic stack substantially on the periphery of the hard mask; in encapsulating the assembly obtained in a dielectric; in planarizing the encapsulated assembly so obtained until ending plumb with the residual layer ofType: ApplicationFiled: January 20, 2009Publication date: August 13, 2009Applicant: Commissariat A L'Energie AtomiqueInventors: Marie-Claire Cyrille, Fabienne Ponthenier
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Publication number: 20090186230Abstract: Metallic materials consisting essentially of a conductive metal matrix, preferably copper, and a refractory dopant component selected from the group consisting of tantalum, chromium, rhodium, ruthenium, iridium, osmium, platinum, rhenium, niobium, hafnium and mixtures thereof, preferably in an amount of about 0.1 to 6% by weight based on the metallic material, alloys of such materials, sputtering targets containing the same, methods of making such targets, their use in forming thin films and electronic components containing such thin films.Type: ApplicationFiled: October 23, 2008Publication date: July 23, 2009Applicant: H.C. Starck Inc.Inventors: Shuwei Sun, Mark Gaydos, Richard Wu, Prabhat Kumar
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Publication number: 20090176059Abstract: There are provided a thermal barrier coating material and a thermal barrier coating member that can suppress spalling when used at a high temperature and have a high thermal barrier effect, a method for producing the same, a turbine member coated with a thermal barrier coating, and a gas turbine. The thermal barrier coating member comprises a heat resistant substrate, a bond coat layer formed thereon, and a ceramic layer formed further thereon, wherein the ceramic layer comprises an oxide which consists of an oxide represented by the general formula A2Zr2O7 doped with a predetermined amount of CaO or MgO and has 10 volume % or more of a pyrochlore type crystal structure, where A represents any of La, Nd, Sm, Gd, and Dy.Type: ApplicationFiled: October 6, 2006Publication date: July 9, 2009Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Katsumi Namba, Taiji Torigoe, Ikuo Okada, Kazutaka Mori, Ichiro Nagano, Yutaka Kawata, Koji Takahashi
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Publication number: 20090166185Abstract: An ion assisted deposition (IAD) method for forming a film on a substrate is disclosed. The film includes a number of layers. The substrate is bombarded by an ion source with a low ion energy at a initial period of forming each of the layers and a high ion energy during a majority period of forming each of the layers after the respective initial period.Type: ApplicationFiled: August 8, 2008Publication date: July 2, 2009Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventor: SHIH-CHE CHIEN
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Publication number: 20090166184Abstract: A track shield structure is disclosed that enables higher track density to be achieved in a patterned track medium without increasing adjacent track erasure and side reading. This is accomplished by placing a soft magnetic shielding structure in the space that is present between the tracks in the patterned medium. A process for manufacturing the added shielding structure is also described.Type: ApplicationFiled: December 26, 2007Publication date: July 2, 2009Inventors: Yuchen Zhou, Lijie Guan, Kunliang Zhang
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Publication number: 20090166183Abstract: A method for manufacturing a magnetic write head having a stepped trailing shield. The stepped trailing shield is formed by forming a non-magnetic bump over a write pole prior to electroplating a wrap-around magnetic shield. This bump is formed by constructing a mask having an opening configured to define the non-magnetic bump. A magnetic material is then sputter deposited. In order to decrease deposition of the magnetic material on the sides of the mask, a collimator is used to align the deposited material along a plane substantially parallel with an air bearing surface plane. This collimation of the deposited magnetic material greatly facilitates liftoff, and more importantly prevents the formation of fences which would otherwise have to be removed by a harsh, aggressive process.Type: ApplicationFiled: December 28, 2007Publication date: July 2, 2009Inventors: Yinshi Liu, Theodore Yong, Yi Zheng
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Patent number: 7550174Abstract: A separator assembly for use in a stack of electrochemical cells is provided, having a first conductive metallic substrate with a first surface and a second conductive metallic substrate with a second surface, wherein each of the first and second surfaces are overlaid with an ultra-thin electrically conductive metal coating. The first and second surfaces form electrically conductive paths at regions where the metal coating of the first and second layer contact one another. The contact of the surfaces overlaid with metal coating is sufficient to join the first and second substrates to one another. Preferred metal coatings comprise gold (Au). Methods of making such separator assemblies are also provided.Type: GrantFiled: January 31, 2008Date of Patent: June 23, 2009Assignee: GM Global Technologies Operations, Inc.Inventors: Gayatri Vyas, Michael Budinski, Brian K Brady, Michael K Lukitsch, Harald Schlag
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Publication number: 20090145769Abstract: An alumina nanohole array and a method of fabricating the same includes the steps of forming an aluminum thin-film on a substrate at a substrate temperature of ?80° C. or below so that crystal grain growth is suppressed, even when a high-purity aluminum material is used, thus providing improved surface smoothness; and anodizing the aluminum thin-film. Preferably, the method additionally includes texturing by pressing a mold having an orderly array of projections against the aluminum thin-film to form pits on the aluminum thin-film which enables a larger array area to be formed. When the mold and the aluminum thin-film are held at a temperature of 150 to 200° C., the pressure used for pit formation is reduced. A magnetic recording medium manufactured by a method therefore includes forming a magnetic layer within the nanoholes so that the medium is suitable as a bit patterned media for a perpendicular recording system.Type: ApplicationFiled: December 2, 2008Publication date: June 11, 2009Applicant: Fuji Electric Device Technology Co., LtdInventor: Kouichi TSUDA
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Publication number: 20090145743Abstract: The invention provides devices and methods for depositing uniform coatings using cylindrical magnetron sputtering. The devices and methods of the invention are useful in depositing coatings on non-cylindrical workpiece surfaces. An assembly of electromagnets located within the bore of a hollow cylindrical emitter is used to form a magnetic field exterior to and near the exterior surface of the emitter. The magnet assembly configuration is selected to provide a magnetic field configuration compatible with the workpiece surface contour. The electromagnet assembly may be a plurality of magnet units, each unit having at least one electromagnet. The magnetic field strength from each magnet unit is separately and electrically adjustable. Each electromagnet in the assembly has a coil of electrically conducting material surrounding a specially shaped core of magnetic material.Type: ApplicationFiled: February 12, 2009Publication date: June 11, 2009Inventors: Gennady YUMSHTYK, Dmitri Ivanov
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Patent number: 7537846Abstract: A protection layer containing carbon as a major component is deposited by plasma CVD. The protection layer has film quality such that, when a spectrum is obtained by excluding photoluminescence from a Raman spectrum in a wavenumber band from 900 cm?1 to 1800 cm?1 obtained by exciting the protection layer with an argon ion laser beam having a wavelength of 514.5 nm and the spectrum is subjected to waveform separation by the Gaussian function to split a D peak appearing around 1350 cm?1 and a G peak appearing around 1520 cm?1, the ratio Dw/Gw between a half width Dw of the D peak and a half width Gw of the G peak exceeds 0 and is not greater than 2.7.Type: GrantFiled: November 10, 2004Date of Patent: May 26, 2009Assignees: Hoya Corporation, Hoya Magnetics Singapore Pte. Ltd.Inventors: Masafumi Ishiyama, Kenji Ayama
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Publication number: 20090127096Abstract: A method for forming a corrugation multilayer is provided. A periodic substrate is obtained, and then a corrugated reshaping layer is formed on the periodic substrate. The corrugated reshaping layer may be formed by an ion beam sputtering system and a bias etching system. Afterward, the following steps a and b are performed repeatedly. In step a, a first capping layer is formed on the periodic substrate by the ion beam sputtering system. In step b, a second capping layer with a corrugation appearance is formed on the first capping layer by simultaneously depositing by the ion beam sputtering system and trimming by the bias etching system. The autocloning corrugation multilayer can be carried out according to this method.Type: ApplicationFiled: January 10, 2008Publication date: May 21, 2009Inventors: Chen-Yang Huang, Hao-Min Ku, Cheng-Wei Chu, Shiuh Chao
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Publication number: 20090110918Abstract: The invention relates to a substrate comprising at least one photocatalytic compound active under the conditions of illuminating an interior of a building or transport vehicle, intended to neutralize the microorganisms with which it comes into contact, and also to its preparation processes and its uses as glazing or another substrate for disinfection, filtration, ventilation, etc.Type: ApplicationFiled: April 10, 2006Publication date: April 30, 2009Applicant: Saint-Gobain Glass FranceInventors: Catherine Jacquiod, Lethicia Gueneau, Sophie Vanpoulle, Ronan Garrec, Jean-Gerard Leconte
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Publication number: 20090101493Abstract: Provided are an oxide sintered body having zinc oxide as a main component and still more containing magnesium, a target obtained by processing the same, a transparent conductive film having excellent chemical resistance and low resistance, obtained by a direct-current sputtering method or an ion plating method by using the same, and a transparent conductive substrate. Provided are an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); still more, an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.Type: ApplicationFiled: May 11, 2007Publication date: April 23, 2009Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki Nakayama, Yoshiyuki Abe
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Patent number: 7517437Abstract: A method and apparatus for sputter depositing a film on a substrate is disclosed. By providing a superimposed RF bias over a DC bias, plasma ionization is increased. In order to increase the resistive load across the substrate, an impedance circuit is provided between the substrate and the susceptor. The impedance circuit allows an insulating substrate to effectively function as an anode and connect to ground.Type: GrantFiled: March 29, 2006Date of Patent: April 14, 2009Assignee: Applied Materials, Inc.Inventor: Bassam Shamoun
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Patent number: 7510608Abstract: Disclosed herein is a hard coating film of laminate type which comprises more than one layer of a first kind, which has a composition represented by the formula (1a) below and a thickness of 1 to 80 nm, and more than one layer of a second kind, which has a composition represented by the formula (2a) below and a thickness of 1 to 80 nm, the layers being placed alternately one over another. (Cr(1-a)Ala)(C(1-x)Nx) ??(1a) (Zr(1-k)Hfk)(C(1-y)Ny) ??(2a) where each subscript denotes the atomic ratio specified below. 0.2?a?0.8 0.7?x?1 0?k?1 0.5?y?1 The hard coating film has outstanding high-temperature characteristics.Type: GrantFiled: August 23, 2006Date of Patent: March 31, 2009Assignee: Kobe Steel Ltd.Inventor: Kenji Yamamoto
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Publication number: 20090075024Abstract: A method for producing a ceramic thermal barrier coating on a component part for use in compressor and turbine components by a vapor depositing process, and a ceramic thermal barrier coating, is disclosed. The method includes: a) provision of a ceramic vapor for depositing on the component part; b) depositing of the ceramic vapor on the component part to form a thermal barrier coating having a columnar structure, the columns being oriented substantially perpendicular to a surface of the component part; and c) varying of at least one method parameter during method step b) such that the resultant thermal barrier coating has columns of alternating decreasing and increasing diameters. The ceramic thermal barrier coating has a columnar structure and the columns are oriented substantially perpendicular to a surface of the corresponding part. The columns have alternately decreasing and increasing diameters.Type: ApplicationFiled: March 2, 2007Publication date: March 19, 2009Applicant: MTU Aero Engines GmbHInventor: Thomas Cosack