Abstract: A sputtering apparatus includes a back plate supporting a sputtering target, a magnet module disposed under the back plate and including a magnet unit reciprocating in a first direction, a first shielding member attached on a portion of the magnet unit, moving together with the magnet unit, and covering at least a portion of the magnet unit, a protective sheet disposed between the back plate and the magnet module, and a second shielding member disposed between the back plate and the magnet module, and having a fixed position.

Abstract: Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

Abstract: Provided is a sputtering target that can form a magnetic film having both good magnetic separation between magnetic grains and high coercive force at the same time; a magnetic film; and a method for producing a magnetic film. The sputtering target according to the present invention comprises: 1 at. % or more of Zn, a part or all of Zn forming a complex oxide(s) of Zn—Ti—O and/or Zn—Si—O; and 45 at. % or less of Pt, the balance being Co and inevitable impurities, the atomic percentage being based on an atomic ratio.

Abstract: In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

Abstract: A method of manufacturing by magnetron cathode sputtering an electrolyte film for use in solid oxide cells (SOC). This method comprises the steps consisting of heating a substrate to a temperature ranging from 200° C. to 1200° C.; followed by subjecting the substrate to at least two treatment cycles, each treatment cycle comprising: 1) depositing one layer of a metal precursor on the substrate by magnetron cathode sputtering of a target made up of the metal precursor, the sputtering being carried out under elemental sputtering conditions; followed by 2) oxidation-crystallisation of the metal precursor forming the layer deposited on the substrate in the presence of oxygen to obtain the transformation of the metal precursor into the electrolyte material; and in that the substrate is kept at a temperature ranging from 200° C. to 1200° C. for the entire duration of each treatment cycle.

Abstract: A method of manufacturing a magnetic sensor includes: a soft magnetic material layer deposition process depositing a soft magnetic material layer (101) constituting a sensitive part (21) sensing a magnetic field on a substrate (10) by magnetron sputtering; and a sensitive part formation process forming the sensitive part (21) sensing the magnetic field in a portion of the soft magnetic material layer (101) where uniaxial magnetic anisotropy is provided by a magnetic field used for magnetron sputtering of the soft magnetic material layer (101).

Abstract: The disclosure describes techniques for forming hard magnetic materials including ??-Fe16N2 using chemical vapor deposition or liquid phase epitaxy and hard materials formed according to these techniques. A method comprises heating an iron source to form a vapor comprising an iron-containing compound; depositing iron from the vapor comprising the iron-containing compound and nitrogen from a vapor comprising a nitrogen-containing compound on a substrate to form a layer comprising iron and nitrogen; and annealing the layer comprising iron and nitrogen to form at least some crystals comprising ??-Fe16N2.

Abstract: A method for preparing a high entropy alloy thin film coating includes preparing a melt alloy by arc melting raw materials including five or more elements, casting the melt alloy into a mold to form a target, placing the target inside a vacuum chamber of a magnetron sputtering system, and rotatably fixing a substrate inside the vacuum chamber, spaced apart from the target. A high entropy alloy thin film is deposited on the substrate by high vacuum radio frequency sputtering inside the vacuum chamber.

Abstract: An undercut processing mechanism includes: a molding core for forming an undercut portion; an inclined pin slidable in a first direction inclined relative to a die opening direction of a molding die during the removal of a molded product from the die; and a guide rail for guiding the movement of the inclined pin. The inclined pin has a slide block movable in contact with the guide rail. The guide rail is so formed as to contact the slide block over the entire stroke of the inclined pin so that the first direction of movement of the inclined pin may be regulated, and is also so formed as to have a shape of a high bending rigidity in a particular direction of the slide block.

Abstract: There is provided a technique that includes partially etching a film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) setting a temperature of the substrate having the first film formed on the surface to a first temperature; (b) stabilizing an in-plane temperature of the substrate at the first temperature; and (c) lowering the temperature of the substrate having the in-plane temperature stabilized at the first temperature from the first temperature to a second temperature that is lower than the first temperature, wherein in (c), an etching gas is supplied to the substrate for a predetermined period.

Abstract: Strengthened glass articles having laser etched features, electronic devices, and methods of fabricating etched features in strengthened glass articles are disclosed. In one embodiment, a strengthened glass article includes a first strengthened surface layer and a second strengthened surface layer under a compressive stress and extending from a first surface and a second surface, respectively, of the strengthened glass article to a depth of layer, and a central region between the first strengthened surface layer and the second strengthened surface layer that is under tensile stress. The strengthened glass article further includes at least one etched feature formed by laser ablation within the first surface or the second surface having a depth that is less than the depth of layer and a surface roughness that is greater than a surface roughness of the first surface or second surface outside of the at least one etched feature.

Abstract: The present teaching is generally directed to soft magnetic alloys. In particular, the present teaching is directed to soft magnetic alloys including Samarium (“Sm”). In a non-limiting embodiment, an Sm-containing magnetic alloy is described including 15 wt % to 55 wt % of Cobalt (“Co”), less than 2.5 wt % of Sm, and 35 wt % to 75 wt % of Iron (“Fe”). The Sm-containing magnetic alloy may further include at least one element X, selected from a group including Vanadium (“V”), Boron (“B”), Carbon (“C”), Chromium (“Cr”), Manganese (“Mn”), Molybdenum (“Mo”), Niobium (“Nb”), Nickel (“Ni”), Titanium (“Ti”), Tungsten (“W”), and Silicon (“Si”). The Sm-containing magnetic alloy may further have a magnetic flux density of at least 2.5 Tesla.

Abstract: A method includes performing an etching process in a first process module, moving a workpiece formed by the etching process from the first process module to a second process module, and performing a film forming process on the workpiece in the second process module. In the performing the film forming process, an insulating film is formed on a first surface and a second surface of a laminated portion by plasma of a processing gas that contains hydrogen. In the performing the film forming process, an internal pressure of the second process module is 200 mTorr or more, and a hydrogen partial pressure of the second process module is 15 mTorr or less. The performing the etching process, the moving the workpiece, and the performing the film forming process are consistently performed in a state where oxygen is exhausted.

Abstract: A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.

Abstract: Provided are a coating film, a manufacturing method for the same, and a PVD device that not only sufficiently improve the balance of low-friction properties and wear resistance, but also improve chipping resistance (defect resistance) and peeling resistance. This coating film coats a substrate surface, wherein a hard carbon layer is formed extending in columns-shape perpendicular to the substrate when observed in a cross-sectional bright-field TEM image, the hard carbon layer is formed using a PVD method, and the ID/IG ratio is 1-6 when the hard carbon layer is measured using Raman spectroscopy, said ratio being the ratio of the Raman spectrum D band peak area intensity and G band peak area intensity.

Abstract: Subject-matter is that between an inner edge and an outer edge of a lead-in area, are created by mechanical means grooves in the form of concentric circles around the central axis with the profile of the letter “V” in the protective layer, wherein these grooves have peaks and edges are created in such a way that the groove with the largest possible diameter of the circle does not exceed the inner part of the outer edge and the groove with the smallest possible diameter of the circle does not exceed the inner edge of the lead-in area, wherein the density of the grooves is such that edges of the grooves are touching each other on the surface of the protective layer and between the individual edges of the grooves there is no area undamaged by the grooves. Non-standard audio discs and video discs are manufactured by pressing from the matrix, they contain lead-in area data area and lead-out area and in the area with the radius from 18.00+1 mm to 23.

Abstract: A method includes: a first film formation process forming a film by sputtering a first insulator target when a projection plane of the first insulator target on a plane including a front face of a substrate is in a first state; and a second film formation process forming a film by sputtering a second insulator target when a projection plane of the second insulator target formed on the plane including the front face of the substrate is in a second state different from the first state. The second film formation process provides the insulating film having a second characteristic variation having opposite tendency to a first characteristic variation in the film provided by the first film formation process, the first characteristic variation occurring from a center portion to a peripheral portion of the substrate, the second characteristic variation occurring at least partly from the center portion to the peripheral portion.

Abstract: The invention provides rare earth-free permanent magnetic materials and methods of making them. The materials can be used to produce magnetic structures for use in a wide variety of commercial applications, such as motors, generators, and other electromechanical and electronic devices. Magnets fabricated using the materials can be substituted for magnets requiring rare earth elements that are costly and in limited supply. The invention provides two different types of magnetic materials. The first type is based on an iron-nickel alloy that is doped with one or more doping elements to promote the formation of L10 crystal structure. The second type is a nanocomposite particle containing magnetically hard and soft phases that interact to form an exchange spring magnetic material. The hard phase contains Fe or FeCo, and the soft phase contains AlMnC.

Abstract: The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

Abstract: Cobalt in oxidized state for use as anti-artifact layer (4) covering a metallic substrate (1) of a medical device for reducing the production of artifacts in MRI caused by the magnetic property of the (1), wherein the anti-artifact layer (4) is present at outermost surface of the metallic substrate (1) and has at least 30% of cobalt ratio (at % Co) to the total amount of transition metallic atoms present therein, and at least 90% of cobalt atoms present within the anti-artifact layer (4) are converted into at least one of Co(II) oxidized state and Co(III) oxidized state.

Abstract: A soft magnetic nanoparticle comprising an iron aluminide nanoalloy of the DO3 phase as a core encapsulated in an inert shell made of alumina.

Abstract: A fabrication method that includes cryogenically cooling a multi-layered structure, which includes a barrier layer, in a multi-purpose chamber having a single enclosure around at least one sputtering target and a substrate support. The method also includes depositing a ferromagnetic layer over the barrier layer of the cryogenically cooled multi-layered structure in the single enclosure when the multi-layered structure is supported on the substrate support.

Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

Abstract: A diode string having a plurality of diodes for ESD protection of a CMOS IC device comprises a first diode and a last diode in the diode string, wherein the first diode and the last diode are both formed on a bottom layer in a silicon substrate, and remaining diodes in the diode string. The remaining diodes are formed on a top layer placed on top of the bottom layer. The diode string further comprises a plurality of conductive lines that connect the first diode and the last diode on the bottom layer sequentially with the remaining diodes on the top layer to form a three dimensional (3D) structure of the diode string.

Abstract: A recording medium comprising a dielectric magnetic layer, the dielectric magnetic layer comprising anisotropic ions having a difference in a single ion contribution to magnetic anisotropy (?K/ion) between a ground state and an excited state of said anisotropic ions equal to at least 0.1 cm?1 (0.0124 meV/ion) at 20° C. (68° F.), wherein the effective Gilbert damping (?) of said dielectric magnetic layer is equal to at least 0.01.

Abstract: A magnetic recording medium including a magnetic recording layer of a granular structure and having a large thickness as well as excellent magnetic properties is provided. The perpendicular magnetic recording medium includes a non-magnetic substrate and a magnetic recording layer, wherein the magnetic recording layer includes first magnetic recording layers on the side of the non-magnetic substrate and second magnetic recording layers, the first magnetic layers have a granular structure including first magnetic crystal grains containing an ordered alloy and a first non-magnetic segregant surrounding the first magnetic crystal grains and containing carbon; and the second magnetic layers have a granular structure including second magnetic crystal grains containing an ordered alloy and a second non-magnetic segregant surrounding the second magnetic crystal grains and containing Zn and O.

Abstract: Embodiments relate to a sputter chamber comprising both a target surface and an anode surface. The sputter chamber has both an ingress and an egress to allow passage of a gas. The sputter chamber further includes a target substrate. A secondary material flexibly changes the composition of the target substrate in-situ by changing coverage of the target by the secondary material. Gas entering the sputter chamber interacts with the changed composition of the target. The interaction discharges a plasma alloy and the alloy condenses on the anode surface in the sputter chamber. The condensed alloy produces an alloy film.

Abstract: A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.

Abstract: A magnetic laminating structure and process includes alternating layers of a magnetic material and a multilayered insulating material, wherein the multilayered insulating material is intermediate adjacent magnetic material layers and comprises a first insulating layer abutting at least one additional insulating layer, wherein the first insulating layer and the at least one additional insulating layer comprise different dielectric materials and/or are formed by a different deposition process, and wherein the layers of the magnetic material have a cumulative thickness greater than 1 micron.

Abstract: A method provides a read sensor stack including an antiferromagnetic (AFM) layer, a pinned layer on the AFM layer, a free layer, and a nonmagnetic layer between the free and pinned layers. Providing the AFM layer includes depositing an AFM layer first portion at a first elevated temperature and at a rate of at least 0.1 Angstrom/second. This AFM layer first portion is annealed in-situ at at least one hundred degrees Celsius. An AFM sublayer is deposited at an elevated temperature and at a sublayer deposition rate of less than 0.1 Angstrom/second. The already-deposited portion of the AFM layer is annealed in-situ at at least one hundred degrees Celsius and less than five hundred degrees Celsius. The sublayer depositing and annealing steps may be repeated in order at least once to provide an AFM layer second portion that has multiple sublayers and is thinner than the AFM layer first portion.

Abstract: The present invention provides a permanent magnet suitable as a variable flux magnet for a variable magnetic flux motor. A permanent magnet comprising R (R is composed of 75 at % or more of Nd and 25 at % or less of at least one element selected from the group consisting of Y, Ce, La, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu), Fe and B as the main component, wherein, said permanent magnet is composed of a main phase of a crystal structure represented by R2Fe14B, a ratio of the element R to all constituent element satisfies 11.8 at %?R?12.2 at %, a cross-sectional area ratio Are of the sub-phase with a higher concentration of R than that of the main phase to the whole magnet structure satisfies 0%<Are?1.3%, and a cross-sectional area ratio Ama of the main phase to the whole magnet structure is 97%?Ama.

Abstract: An apparatus according to one embodiment includes a magnetic sensor structure, a magnetic shield having at least one laminate pair comprising a magnetic layer and an electrically nonconductive nonmagnetic layer, and a nonmagnetic spacer layer between the sensor structure and the magnetic shield. In one embodiment, a deposition thickness of the nonconductive nonmagnetic layer in each laminate pair is about 10% or less of a total deposition thickness of the laminate pair. In another embodiment, a deposition thickness of the nonconductive nonmagnetic layer in each laminate pair is between about 1 and about 12 nanometers. In yet another embodiment, the magnetic shield has at least one second laminate pair, and a nonlaminated magnetic portion sandwiched between the at least one laminate pair and the at least one second laminate pair.

Abstract: A method of preparing silver nanoparticles, including silver nanorings. A zinc oxide thin film is formed initially by direct-current sputtering of a zinc target onto a substrate. A silver thin film is then formed by a similar sputtering technique, of a silver target onto the zinc oxide thin film. After that, the silver thin film is subject to an annealing treatment. The temperature, duration and atmosphere of the annealing treatment can be varied to control the average particle size, average distance between particles (density), particle size distribution of the silver nanoparticles. In at least one embodiment, silver nanoparticles of ring structure are produced.

Abstract: Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure.

Abstract: A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.

Abstract: Provided is a sputtering target containing SiO2 for a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO2, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.

Abstract: Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via.

Abstract: A recording medium having improved signal-to-noise ratio (SNR) capabilities and head-disk interface characteristics includes an etched smoothened underlayer, over which the recording layer is grown. One mechanism for increasing the SNR is by growing more columnar magnetic grain structures within the recording layer, which is facilitated by a smoother underlayer template.

Abstract: A method and system for fabricating a magnetic transducer are described. The magnetic transducer includes a pole and a nonmagnetic intermediate layer adjacent to the pole. The pole has a paddle and a pole tip including a plurality of sidewalls. The pole includes a first magnetic pole layer, at least one antiferromagnetic coupling (AFC) structure on the first magnetic pole layer, and a second magnetic pole layer on the AFC structure(s). At least a portion of the first magnetic pole layer resides on the sidewalls of the pole tip. The paddle has a paddle width in a track width direction. The pole tip has a pole tip width in a track width direction that is less than the paddle width.

Abstract: A method for smoothing a medium includes depositing a magnetic layer onto a base, depositing an overcoat layer onto an outer surface of the magnetic layer, and burnishing an outer surface of the overcoat layer. Further, the method includes at least one of (i) directing a first ion beam comprised of first energetic ions toward the outer surface of the magnetic layer at a first shallow grazing angle and smoothing the outer surface of the magnetic layer via etching engagement between the first ion beam and the outer surface of the magnetic layer; and (ii) directing a second ion beam comprised of second energetic ions toward the outer surface of the overcoat layer at a second shallow grazing angle and smoothing the outer surface of the overcoat layer via etching engagement between the second angled ion beam and the outer surface of the overcoat layer.

Abstract: An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.

Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the fed substrate; forming a first material film on the first surface of the degassed substrate in a first film formation chamber; forming a second material film on the first material film in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the material films formed thereon; unrolling and feeding the taken up substrate from the first roll chamber in the direction, using a second surface opposite the first surface of the substrate as a surface for film formation; and repeating all the above treatments.

Abstract: A method for applying or embedding nanoparticles or microparticles of any substance in a defined manner onto or into a layer to be applied to a substrate surface by plasma coating before, during or after the plasma coating operation in a magnetron or plasmatron. The particles are introduced from the outside into the vacuum chamber of the magnetron or plasmatron via at least one pressure stage. The particles are spatially distributed in the plasma space between the target and the substrate. The particles in the plasma space are preferably exposed to an electric field generating a movement of the particles toward the substrate. It is advantageous for this purpose if the particles are electrically charged before being introduced into the plasma space.

Abstract: According to one embodiment, a magnetic recording medium includes a substrate, an auxiliary layer formed on the substrate, and at least one perpendicular magnetic recording layer formed on the auxiliary layer. The perpendicular magnetic recording layer includes a magnetic dot pattern. The perpendicular magnetic recording layer is made of an alloy material containing one element selected from iron and cobalt, and one element selected from platinum and palladium. This alloy material has the L10 structure, and is (001)-oriented. The auxiliary layer includes a dot-like first region covered with the magnetic dot pattern, and a second region not covered with the magnetic dot pattern. The first region is made of a (100)-oriented nickel oxide. The second region contains nickel used in the first region as a main component.

Abstract: A manufacturing method of a carrier for a double-side polishing apparatus for polishing surfaces of a wafer, the carrier having: a carrier body arranged between upper and lower turn tables, the carrier body having a holding hole for holding the wafer; and a ring-shaped resin insert arranged along an inner circumference of the holding hole, the resin insert having an inner circumferential surface to be brought into contact with a peripheral portion of the wafer to be held, the method having the steps of attaching, to the holding hole of the carrier body, a base material for the resin insert not having the inner circumferential surface to be brought into contact with the wafer to be held, and performing inner-circumferential-surface-forming processing on the base material for the resin insert to form the inner circumferential surface to be brought into contact with the peripheral portion of the wafer to be held.

Abstract: Provided herein is a microwave device using a magnetic material nano wire array and a manufacturing method thereof, the device including a template having a nano hole array filled with a metal magnetic material.

Abstract: A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.

Abstract: An apparatus and associated method are generally described as a thin film exhibiting a tuned anisotropy and magnetic moment. Various embodiments may form a magnetic layer that is tuned to a predetermined anisotropy and magnetic moment through deposition of a material on a substrate cooled to a predetermined substrate temperature.

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element includes intermittently exposing a surface of a base substrate to sputter particles from a sputter target, and thereby forming a thin film on the base substrate.