Abstract: The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used.

Abstract: There are provided a method for manufacturing a magnetic recording medium which is excellent in terms of both the recording and reproduction characteristics and the thermal fluctuation characteristics without reducing the density and hardness of the perpendicular magnetic layer; a magnetic recording medium; and a magnetic recording and reproducing apparatus with which an excellent recording density is achieved, wherein, in the method for manufacturing the magnetic recording medium, at least a portion of the perpendicular magnetic layer 4 is formed as a magnetic layer having a granular structure that contains Co as a major component and also contains an oxide of at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg; a target for forming the perpendicular magnetic layer 4 by the sputtering process is prepared so as to include an oxide of Co and a compound of Co and at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg, an

Abstract: A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.

Abstract: A silicon-based shape memory alloy negative active material includes a silicon-based material precipitated on a Ni2Mn1-XZX shape memory alloy basic material. In the silicon-based shape memory alloy negative active material, X satisfies the relationship 0?X?1 and Z is one of Al, Ga, In, Sn, or Sb.

Abstract: The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.

Abstract: A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.

Abstract: A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field.

Abstract: A magnetron source comprises a target (39) with a sputtering surface and a back surface. A magnet arrangement (30, 32, 19a, 19b) is drivingly moved along the backside of the target (39). A tunnel-shaped magnetron magnetic field is generated between an outer loop (30) and an inner loop (32) of the magnet arrangement. Elongated pivotable or rotatable permanent magnet arrangements (19a, 19b) of the magnet arrangement are provided in an interspace between the outer and inner loops (30, 32) of the overall arrangement.

Abstract: A method of manufacturing a magnetoresistive (MR) effective element having a pair of magnetic layers and a nonmagnetic intermediate layer including a ZnO film, wherein a relative angle of magnetization directions of the pair of magnetic layers varies according to an external magnetic field. The method includes a step for introducing a mix gas of oxygen gas and argon gas into a depressurized chamber, wherein a first target of ZnO, a second target of Zn and a substrate having a right-below layer are disposed in the chamber, and a step for depositing the ZnO film on the right-below layer by applying each of a first and second direct current (DC) application power to spaces between the first and second targets and the substrate respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the substrate is set at positive potential.

Abstract: Embodiments of the invention provide a manufacturing method which permits a high quality perpendicular magnetic recording medium to be manufactured with a high yield by preventing abnormal discharge which sputters particles from the target. In one embodiment, while the perpendicular magnetic recording medium is formed, DC pulses are applied to the target. During the reversal period (Reversal Time) between sputtering periods, a voltage of the opposite polarity is applied. During the sputtering period, a negative voltage is applied which biases the target surface to a negative potential, causing Ar+ to collide with and sputter CoCrPt and SiO2 for deposition on the intermediate layer. The top surface of the insulation material (SiO2) on the target is charged by Ar+ to have a voltage larger than the target voltage. However, arcing can be prevented since the charge on the surface of the insulation material is neutralized due to a positive voltage applied to the target during the non-sputtering period.

Abstract: A method for manufacturing with high productivity a magnetic recording medium having an MgO film is disclosed which uses a DC sputtering method. The method suppresses oxygen deficiency in the MgO film, and the MgO film has high crystallinity. The method includes at least a process of forming an intermediate layer of MgO on a nonmagnetic base by a reactive DC sputtering method that uses a target containing Mg and MgO in an oxygen-containing gas, and a process of forming a magnetic recording layer containing an L10 ordered alloy on the intermediate layer.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative ? to offset the positive ? from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ?2 or (CoB/CoFe)m/CoB where m is ?1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for ? (<5×10?6), RA (1.5 ohm/?m2), and Hc (<6 Oe).

Abstract: According to one embodiment, a magnetic recording medium includes a magnetic recording layer formed on a substrate and including magnetic grains and a grain boundary formed between the magnetic grains, the grain boundary includes a first grain boundary having a first thermal conductivity, and a second grain boundary formed on the first grain boundary and having a second thermal conductivity different from the first thermal conductivity, and at least one of the first and second grain boundaries suppresses thermal conduction.

Abstract: A method for producing a hard bias (HB) structure that stabilizes a free layer in an adjacent spin valve is disclosed. The HB structure includes a composite seed layer and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminate. (Co/Ni)x deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent processing. After initialization, HB magnetization direction is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.

Abstract: A film formation apparatus and film formation method that improve film thickness uniformity. A rotation mechanism holds a target having a sputtered surface in a state inclined relative to a surface of a substrate. The rotation mechanism rotatably supports the target about an axis extending along a normal of the sputtered surface. The target supported by the rotation mechanism is sputtered to form a thin film on the surface of the substrate. When forming the thin film, the rotation mechanism maintains the rotational angle of the target.

Abstract: A method for manufacturing a patterned medium of an embodiment includes forming a perpendicular magnetic recording layer on a substrate, forming a mask on the perpendicular magnetic recording layer, milling the perpendicular magnetic recording layer, and depositing a protective layer on the perpendicular magnetic recording layer. The perpendicular magnetic recording layer includes a first element selected from Fe and Co and a second element selected from Pt and Pd, and has a hard magnetic alloy material having an L10 or L11 structure. A temperature of the substrate during the milling is higher than or equal to 250° C. and lower than or equal to 500° C.

Abstract: A magnetic stack includes a substrate, a magnetic recording layer, and a TiN—X layer disposed between the substrate and the magnetic recording layer. In the TiN—X layer, X is a dopant comprising at least one of MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, AlN, and Al2O3.

Abstract: Magnetic flux shunting pads for optimizing target erosion in sputtering processes are provided. In one embodiment, the invention relates to a sputtering system for countering uneven wear of a sputter target, the system including a sputter target having an emitting surface and a rear surface opposite to the emitting surface, a moving magnet assembly positioned proximate the rear surface and including a planar base and a magnet fixed to the planar base at a preselected point, the moving magnet assembly configured to be moved such that a position of the magnet relative to the rear surface is varied, and a magnetic shunting pad having a planar shape and positioned between the moving magnet assembly and the target, wherein the shunting pad includes uneven magnetic shunting characteristics.

Abstract: A sputtering system includes a first sputtering assembly configured to sputter material onto a first disk and a second sputtering assembly configured to sputter material onto a second disk, the second sputtering assembly positioned proximate the first sputtering assembly. The first sputtering assembly includes a first magnetic ring, and the second sputtering assembly includes a second magnetic ring. The first magnetic ring includes a first region of lower relative magnetic strength positioned near the second magnetic ring, and the second magnetic ring includes a second region of lower relative magnetic strength positioned near the first magnetic ring.

Abstract: A magnetic recording medium that is capable of realizing both high magnetic permeability and antiferromagnetic coupling for a soft magnetic underlayer. Namely, a magnetic recording medium including at least a non-magnetic substrate on which is laminated a soft magnetic underlayer formed by antiferromagnetic coupling of a plurality of soft magnetic layers, and a perpendicular magnetic layer for which the axis of easy magnetization is oriented mainly perpendicularly to the non-magnetic substrate, wherein the soft magnetic layers contain Fe as a first main component, Co as a second main component, and also contain Ta, the soft magnetic underlayer is antiferromagnetically coupled using the second peak or a subsequently appearing peak of the antiferromagnetic coupling force, which changes according to the thickness of a spacer layer sandwiched between the plurality of soft magnetic layers, and the magnetic permeability of the soft magnetic underlayer is not less than 1,000 H/m.

Abstract: In one embodiment, a perpendicular magnetic recording medium includes an oxide recording layer including an oxide and a non-oxide recording layer which does not contain an oxide positioned above the oxide recording layer. The oxide recording layer includes a region R1 where a grain boundary width in a direction parallel to a plane of formation of R1 increases therealong from a lowermost portion of the oxide recording layer toward a medium surface, a region R3 positioned above R1 wherein a grain boundary width increases therealong toward the medium surface, a region R2 where a grain boundary width of R2 decreases therealong from R1 to R3, with R2 being positioned between R1 and R3, and a region R4 where a grain boundary width of R4 decreases therealong from R3 toward the medium surface, with R4 being positioned above R3 and near an uppermost portion of the oxide recording layer.

Abstract: One embodiment of the present invention is a method of fabricating a tunnel magnetic resistive element including a first ferromagnetic layer, a tunnel barrier layer and a second ferromagnetic layer, comprising a step of making the tunnel barrier layer, comprising the step of making the tunnel barrier layer includes the steps of: forming a first layer on the first ferromagnetic layer by applying DC power to a metal target and introducing sputtering gas without introducing oxygen gas in a sputtering chamber; and forming a second layer on the first layer by applying DC power to the metal target and introducing the sputtering gas and oxygen gas with the DC power to be applied to the metal target from the step of forming the first layer in the sputtering chamber, wherein the second layer is oxygen-doped.

Abstract: In a method for fabricating a magnetic tunnel junction, a first magnetic layer is formed on a substrate, and a tunnel insulating layer is formed on the first magnetic layer. Subsequently, a second magnetic layer is formed on the tunnel insulating layer. In the method, the first magnetic layer is formed by periodically sputtering a magnetic target while a metal target is continuously sputtered.

Abstract: A method and system for providing a magnetic transducer is described. The method and system define a magnetoresistive sensor in a track width direction, provide hard bias material(s) adjacent to the sensor in the track width direction, and provide sacrificial capping layer(s) on a portion of the hard bias material(s). The sacrificial capping layer(s) have a first height in a stripe height direction. The method and system also provide a mask for defining a stripe height of the sensor. The mask covers at least part of the sensor and has a second height in the stripe height direction. The second height is less than the first height. The method and system define the stripe height of the sensor while the mask covers the sensor. The sacrificial capping layer(s) are configured to prevent removal of the portion of the hard bias material(s) while the stripe height is defined.

Abstract: A method for producing printed magnetic functional elements for resistance sensors and printed magnetic functional elements. The invention refers to the field of electronics and relates to a method for producing resistance sensors, such as can be used, for example, in magnetic data storage for read sensors or in the automobile industry. The disclosure includes a simple and cost-effective production method and to obtain such printed magnetic functional elements with properties that can be adjusted as desire, in which a magnetic material is deposited onto a substrate as a film, is removed from the substrate and divided into several components and these components are applied on a substrate by means of printing technologies. Aspects are also directed to a printed magnetic functional element for resistance sensors of several components of a film, wherein at least 5% of the components of the functional element have a magnetoimpedance effect.

Abstract: A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

Abstract: To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both Si and Ge and SinGe1-n (where 0?n?1) and a second member containing one of the element A and SinGe1-n (where 0?n?1), in which one of the first member and the second member is a columnar member, formed on a substrate, whose side face is surrounded by the other member, the ratio Dl/Ds of an average diameter Dl in the major axis direction to an average diameter Ds in the minor axis direction of a transverse sectional shape of the columnar member is less than 5, and the element A is one of Li, Na, Mg, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and B.

Abstract: The present invention provides a security functional thin film and a security product containing such a thin film. The security functional thin film is of an amorphous structure, and possesses soft magnetic characteristics. Large Barkhausen effect can be detected along the in-plane preferred direction of magnetization; and the Large Barkhausen effect significantly attenuates, or no such signal can be detected, in a direction perpendicular to the in-plane preferred direction of magnetization. The thin film has a thickness of 20-300 nm, and the thin film also possesses element encoding characteristics that can be authenticated by experts. The security functional thin film of the present invention can be fabricated by magnetron sputtering web coating process.

Abstract: A patterned media has a substrate, and a magnetic recording layer on the substrate including protruded magnetic patterns and a nonmagnetic material filled in between the protruded magnetic patterns. In the patterned media, a depth Db and a depth Da, which are defined that Db is a depth from a surface of the magnetic patterns to a surface of the nonmagnetic material filled in a first central part between the magnetic patterns adjacent to each other in a cross-track direction or a down-track direction, and Da is a depth from a surface of the magnetic patterns to a surface of the nonmagnetic material filled in a second central part in a portion surrounded by the magnetic patterns, have a relationship that the depth Da is greater than the depth Db.

Abstract: The quantity of oxide contained in a magnetic layer is controlled to control the crystal grains and the segregation structure for ensuring low noise characteristic in a granular magnetic layer of a perpendicular magnetic recording medium. The granular magnetic layer consists of ferromagnetic crystal grains and a nonmagnetic grain boundary region mainly of an oxide surrounding the ferromagnetic crystal grains. The perpendicular magnetic recording medium has a nonmagnetic underlayer composed of a metal or alloy having hexagonal closest-packed crystal structure. The ferromagnetic crystal grain is composed of an alloy containing at least cobalt and platinum. The volume proportion of the nonmagnetic grain boundary region mainly of the oxide falls within a range of 15% to 40% of the volume of the total magnetic layer.

Abstract: A patterned perpendicular magnetic recording disk has a pre-patterned disk substrate with pillars and trenches arranged in data regions and servo regions. In the data regions, the height of the data pillars is equal to or greater than the spacing between the data pillars, while in the servo regions the height of the servo pillars is less than the spacing between the servo pillars. A magnetic recording material with perpendicular magnetic anisotropy is deposited over the entire disk substrate, which results in magnetic material on the tops of the data pillars and servo pillars and in the servo trenches. The material in the data trenches is either nonmagnetic or discontinuous. After the application of a high DC magnetic field in one perpendicular direction and a low DC magnetic field in the opposite direction, the resulting disk has patterned servo sectors with servo pillars all magnetized in the same perpendicular direction and servo trenches magnetized in the opposite perpendicular direction.

Abstract: As recording density of sensors is increased, it is desired to lower the areal resistivity (RA) of TMR sensors. Decreasing RA to 1.0 ??m2 or below badly influences the read signal since the interlayer coupling magnetic field (Hint) between the pinned layer and the free layer increases sharply and impedes the free rotation of magnetization of the free layer. According to one embodiment, a tunnel junction type magneto-resistive head solves this problem by having a layered film comprising an underlying layer, a crystalline orientation control layer, an antiferromagnetic layer, a first ferromagnetic layer, an antiparallel coupling layer, a second ferromagnetic layer, an insulation barrier layer, and a third ferromagnetic layer between a lower magnetic shield layer and an upper magnetic shield layer, wherein a crystallographic plane of the antiferromagnetic layer is directed parallel to a film surface by growing the antiferromagnetic layer substantially conformably on the crystalline orientation control layer.

Abstract: Disclosed is a method of testing a magnetic recording medium including a magnetically isolated magnetic recording pattern (41a) on a non-magnetic substrate. The method includes: a first signal writing step of writing a first signal (6) with a width less than a track width at a plurality of measurement positions (5) on the magnetic recording pattern (41a) using a writing head; a first signal reading step of reading the first signal (6) using the reading head to obtain a plurality of first read signals corresponding to the measurement positions (5); and an analysis step of analyzing magnetic characteristics of the magnetic recording pattern (41a) using the plurality of first read signals obtained in the first signal reading step. The test method is suitable for testing the magnetic characteristic distribution of a discrete track medium and is capable of testing the magnetic characteristic distribution of a magnetic recording medium with high accuracy.

Abstract: A method for manufacturing an MTJ film includes forming a first ferromagnetic layer; forming a tunnel barrier layer over the first ferromagnetic layer; and forming a second ferromagnetic layer over the tunnel barrier layer. The first ferromagnetic layer is a Co/Ni stacked film having perpendicular magnetic anisotropy. The step for forming a tunnel barrier layer includes repeating unit film formation treatment n times (n is an integer of 2 or more). The unit film formation treatment includes the steps of: depositing an Mg film by a sputtering method; and oxidizing the deposited Mg film. A film thickness of the deposited Mg film in the first unit film formation treatment is 0.3 nm or more and 0.5 nm or less. A film thickness of the deposited Mg film in the second unit film formation treatment or later is 0.1 nm or more and 0.45 nm or less.

Abstract: The present invention relates to a magnetic head and particularly to improvement of its recording element. The recording element includes a first magnetic film, a second magnetic film, a coil film, and an insulating film. The first magnetic film has a first pole portion. The second magnetic film has a second pole portion opposed to the first pole portion with a magnetic gap film therebetween and is joined to the first magnetic film at a back gap portion that is located in a rearward position with respect to a medium facing surface. The coil film extends around the back gap portion, and the insulating film encloses the coil film. Moreover, the second magnetic film entirely covers the insulating film.

Abstract: A method of processing wafers in a rotating disc CVD reactor uses wafer carrier having a unitary plate defining wafer-holding features such as pockets on its upstream surface. The carrier connects to the spindle of the reactor during processing. After processing the carrier and wafers in the reactor, the wafers are removed from the carrier. The carrier is renewed by removing the hub from the plate, cleaning the plate and then reassembling the plate with the same or a different hub.

Abstract: An apparatus and method are provided for improving perpendicular magnetic recording media. The present invention provides media, and a method of fabricating media in a cost-effective manner, with a reduced ruthenium (Ru) content interlayer structure, while meeting media performance requirements. A perpendicular magnetic recording medium is provided comprising a non-magnetic substrate having a surface, and a layer stack situated on the substrate surface. The layer stack comprises, in overlying sequence from the substrate surface a magnetically soft underlayer; an amorphous or crystalline, non-magnetic seed layer; an interlayer structure for crystallographically orienting a layer of a perpendicular magnetic recording material situated on the underlayer; and at least one crystallographically oriented, magnetically hard, perpendicular magnetic recording layer situated on the interlayer structure.

Abstract: The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk?(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.

Abstract: A dual magnetic tunnel junction (MTJ) sensor is provided with a longitudinal bias stack sandwiched between a first MTJ stack and a second MTJ stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second MTJ stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second MTJ stacks.

Abstract: Disclosed is a method for the low cost manufacturing a plurality of rigid sputtered magnetic media disks of one or more sizes from a rigid sheet, in which one or more initial steps of preparing the media are performed while the media is in sheet form. The individual disks are then removed from the sheet, and final processing is performed individually on the disks.

Abstract: A magnetoresistive effect element is produced by forming a first magnetic layer, a spacer layer including an insulating layer and a conductive layer which penetrates through the insulating layer and passes a current, on the first magnetic layer, and a second magnetic layer all of which or part of which is treated with ion, plasma or heat, on the formed spacer layer.

Abstract: To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes.

Abstract: A perpendicular magnetic recording medium is disclosed in which a soft magnetic layer used as a low Ku layer can be stably produced with high performance. Thermal stabilization of magnetization, ease of writing by a magnetic head, and SNR also are improved. A method of manufacturing the medium is disclosed. The perpendicular magnetic recording medium includes at least a nonmagnetic underlayer, a magnetic recording layer, and a protective layer formed in this order on a nonmagnetic substrate. The magnetic recording layer includes a low Ku layer having a relatively small perpendicular magnetic anisotropy constant (Ku value), and a high Ku layer in which the Ku value is relatively large, and the low Ku layer includes a soft magnetic thin film including an iron group element-based microcrystal structure, in which a nitrogen element is added to a ferromagnetic material mainly containing one of metals of Co, Ni and Fe or an alloy of the metal.

Abstract: The invention provides a method of forming a magnetic layer with stable magnetic properties and stable recording-and-reproducing properties, by uniformizing the distribution of oxygen radical concentration upon reactive sputtering, and thereby uniformizing the concentration of oxygen to be taken into the magnetic layer along the plane direction.

Abstract: A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

Abstract: A patterned perpendicular magnetic recording disk has a pre-patterned disk substrate with pillars and trenches arranged in data regions and servo regions. In the data regions, the height of the data pillars is equal to or greater than the spacing between the data pillars, while in the servo regions the height of the servo pillars is less than the spacing between the servo pillars. A magnetic recording material with perpendicular magnetic anisotropy is deposited over the entire disk substrate, which results in magnetic material on the tops of the data pillars and servo pillars and in the servo trenches. The material in the data trenches is either nonmagnetic or discontinuous. After the application of a high DC magnetic field in one perpendicular direction and a low DC magnetic field in the opposite direction, the resulting disk has patterned servo sectors with servo pillars all magnetized in the same perpendicular direction and servo trenches magnetized in the opposite perpendicular direction.

Abstract: The present invention relates to a magnetic thin film containing a L11 type Co—Pt—C alloy in which atoms are orderly arranged, and can realize an order degree excellent in regard to the L11 type Co—Pt—C alloy to achieve excellent magnetic anisotropy of the magnetic thin film. Therefore, in the various application devices using the magnetic thin film, it is possible to achieve a large capacity process and/or a high density process thereof in a high level.

Abstract: In a magnetic disk having at least a glass substrate, a plurality of underlayers formed over the glass substrate, and a magnetic layer formed over the plurality of underlayers, at least one of the underlayers is an amorphous underlayer containing a VIa group element and carbon and, given that the remanent magnetization in a circumferential direction of the disk is Mrc and the remanent magnetization in a radial direction of the disk is Mrr, the magnetic disk has a magnetic anisotropy in which Mrc/Mrr being a ratio between Mrc and Mrr exceeds 1.