Abstract: Apparatus and methods are provided that enable processing of patterned layers on substrates using a detachable mask. Unlike prior art where the mask is formed directly over the substrate, according to aspects of the invention the mask is made independently of the substrate. During use, the mask is positioned in close proximity or in contact with the substrate so as to expose only portions of the substrate to processing, e.g., sputtering or etch. Once the processing is completed, the mask is moved away from the substrate and may be used for another substrate. The substrate may be cycled for a given number of substrates and then be removed for cleaning or disposal.

Abstract: An electrically conductive separator element and assembly for a fuel cell which comprises an electrically conductive substrate having a monoatomic layer coating overlying the substrate. The monatomic layer coating may comprise an electrically conductive material, for example, a noble metal, desirably Ru, Rh, Pd, Ag, Ir, Os and preferably Au. Methods of making such separator elements and assemblies are also provided.

Abstract: The present invention relates to dielectric ceramics, thin and/or thick layers produced therefrom and a method for the production thereof and the use of the dielectrics and of the thin and/or thick layers.

Abstract: Embodiments of methods of modifying surface features on a workpiece with a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Abstract: An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

Abstract: Planetary carriers (22) for workpieces mounted on a carousel (19) are provided within a vacuum chamber. A source (24) for a cloud comprising ions (CL) is provided so that a central axis (ACL) of the cloud intercepts the rotary axis (A20) of the carousel (19). The cloud (CL) has an ion density profile at the moving path (T) of planetary axes (A22) which drops to 50% of the maximum ion density at a distance from the addressed center axis (ACL) which is at most half the diameter of the planetary carriers (22). When workpieces upon the planetary carriers (22) are etched by the cloud comprising ions material which is etched off is substantially not redeposited on neighboring planetary carriers but rather ejected towards the wall of the vacuum chamber.

Abstract: A hard coating film is efficiently etched by a krypton ion beam of comparatively large mass, and then it is slowly etched by an argon ion beam of small mass. As a result, a coating film removing operation can be performed in a short time with suppressing an influence of the coating film removal on a tool base material (changes in shape and dimension) to the minimum. Since both krypton and argon are an inert gas, even upon the surface of the tool base material being exposed, the surface weakness by chemical erosion can be completely prevented. As a result, even when a hard coating film coated working tool is reproduced by re-coating the tool base material with the hard coating film, the hard coating film is coated by excellent adhesion strength.

Abstract: An electrode for forming an electrochemical cell with a substrate and a method of forming said electrode. The electrode comprises a carrier (1) provided with an insulating layer (7) which is patterned at a front side. Conducting material in an electrode layer (4) is applied in the cavities of the patterned insulating layer and in contact with the carrier. An connection layer (5) is applied at the backside of the carrier and in contact with the carrier. The periphery of the electrode is covered by the insulating material.

Abstract: A mask structure for fabricating a write pole for a perpendicular write head. The mask structure includes a first and second hard mask structures separated by an image transfer layer, such as DURAMIDE®. The first mask structure may be a bi-layer mask structure that functions as a CMP stop as well as a hard mask for ion milling. The first hard mask is chosen to have a desired resistance to removal by ion milling to maintain excellent track width control during an ion milling process used to form the write pole. Therefore, the first hard mask may be comprises of two layers selected from the group consisting of Rh, alumina, and diamond like carbon (DLC). The second hard mask is constructed of a material that functions as a bottom antireflective coating as well as a hard mask.

Abstract: In one embodiment, a film can comprise a transparent substrate comprising a plurality of prism structures, wherein the prism structures have a blunt tip having a tip length of 250 nm to 2,000 nm. The film can be used in various applications, such as back light displays. In one embodiment, a method for forming a master for a film can comprise ion beam etching a diamond tip to form a blunt tip having a tip length of 250 nm to 2,000 nm, and forming negatives of prism structures into a master using the diamond tip.

Abstract: A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method provides for accurate definition of a device feature such as a write pole flare point. A functional lapping guide is formed to determine when a lapping operation should be terminated to define an air bearing surface of a slider. In order to provide accurate compensation for manufacturing variations in the functional lapping guide, a dummy lapping guide is provided. An amount of variation of a front edge of the dummy lapping guide, which is defined by the same process step as a writer pole flare point, can be calculated by measuring the width (stripe height) of the dummy lapping guide based on its electrical resistance.

Abstract: A method of fabricating a magnetic write head, in accordance with one embodiment, includes forming a beveled write pole. A conformal spacer may be formed upon a portion of a flare length proximate a tip of the write pole. A shield layer may also be formed upon the conformal spacer adjacent the flare length proximate the tip of the write pole.

Abstract: An improved method for the manufacture of magnetoresistive multilayer sensors is disclosed. The method is particularly advantageous for the production of magnetic tunnel junction (MTJ) sensors, which can be damaged at the air bearing surface by conventional lapping and ion milling. The disclosed process protects the ABS of the magnetoresistive sensor by depositing a diamond like carbon layer which remains in place through ion milling. The DLC layer is removed by oxidation subsequent to the formation of the ABS.

Abstract: A method for manufacturing a patterned magnetic recording medium that allows processing only required sites with high precision, in a dry etching process during formation of an uneven pattern in an interlayer. The method includes forming sequentially, on a substrate, a soft magnetic layer, an etching stop layer, a seed layer, an interlayer, a hard mask layer and a resist; obtaining a resist pattern by patterning the resist; obtaining a patterned hard mask layer by etching the hard mask layer using the resist pattern as a mask; stripping the resist pattern; obtaining a patterned interlayer by etching the interlayer using the patterned hard mask layer as a mask; stripping the patterned hard mask layer; and forming a magnetic recording layer by forming a perpendicular orientation section on the patterned interlayer, and forming a random orientation section on the seed layer.

Abstract: Embodiments of an apparatus and methods for offsetting systematic non-uniformities using a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of an apparatus and methods for correcting systematic non-uniformities using a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Abstract: The invention relates to the automatic cleaning of ion sources inside mass spectrometers, especially the cleaning of ion sources where the ions are generated by matrix-assisted laser desorption (MALDI). The invention consists in cleaning the electrodes of the ion source, which are contaminated with organic material, in the mass spectrometer itself by etching with reactive ions produced by an electrically generated gas discharge in a specially admitted reactant gas.

Abstract: A method for fabricating sliders (magnetic heads) with a recessed surface around a magnetic feature such as the active components of the write head on the air-bearing surface (ABS) is described. An embodiment of the method applies a positive photoresist to the exposed ABS surface, a magnetic field is applied, then liquid ferrofluid is applied on top of the photoresist. The pole pieces around the write gap will interact with the applied magnetic field so that the field gradient is highest around the write gap and the mobile ferrofluid will preferentially collect in the areas of the surface having the highest magnetic field gradient. The opaque magnetic particles in the ferrofluid form an optical ferrofluid mask over the photoresist around the write gap. The unmasked surface of the slider is milled which results in the recession of material around the write gap.

Abstract: The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions, exposing the structure at the selected regions. A material layer is then deposited on top of the solid condensate layer and the exposed structure at the selected regions. Then the solid condensate layer and regions of the material layer that were deposited on the solid condensate layer are removed, leaving a patterned material layer on the structure.

Abstract: A magnetoresistive sensor having a well defined track width and method of manufacture thereof.

Abstract: A method of fabrication of the write head of a perpendicular recording head allows for production of P3 pole tips of width less than 200 nm (200×10?9 meters). The method includes fabricating the P2 flux shaping layer, depositing the P3 layer, depositing a layer of ion-milling resistant material, depositing at least one sacrificial layer, shaping the P3 layer into P3 pole tip, removing the at least one sacrificial layer to leave the P3 pole tip, and encapsulating the P3 pole tip.

Abstract: A milling device is disclosed for the preparation of microscopy specimens or other surface science applications through the use of ion bombardment. The device provides the ability to utilize both gross and fine modification of the specimen surface through the use of high and low energy ion sources. Precise control of the location of the specimen within the impingement beams created by the ion sources provides the ability to tilt and rotate the specimen with respect thereto. Locational control also permits the translocation of the specimen between the various sources under programmatic control and under consistent vacuum conditions. A load lock mechanism is also provided to permit the introduction of specimens into the device without loss of vacuum and with the ability to return the specimen to ambient temperature during such load and unload operation. The specimen may be observed and imaged during all active phases of operation.

Abstract: The invention relates to an elastomeric device (105), wherein the elastomeric device contains a relief structure with indentations with respect to the base (110), (102) and wherein selected ones of said indentations comprise at least two indentation depths (112), (108) and indentation widths (101), (107). It also relates to a method of making a master for construction of said elastomeric device comprising a procedure to provide a pattern on a substrate of a suitable material. One step in. the construction of said elastomeric device comprises a molding procedure of an elastomer. Methods of using the elastomeric device in printing, fluidic control, sorting, lab-on-a-chip devices are also disclosed.

Abstract: A method of manufacturing a split probe tip on a cantilever comprises providing a cantilever having a surface on which is formed a probe that projects outwardly from the surface at one end of the cantilever, irradiating and scanning a tip of the probe with a focused particle beam directed in a direction that is inclined relative to the surface of the cantilever to obtain an image of the probe tip, and determining the center of the probe tip from the image of the probe tip. Then a first channel is formed in the probe tip at the center thereof by irradiating and scanning the center of the probe tip with a focused particle beam to form a split probe tip having two spaced-apart probe tip parts.

Abstract: On the trailing side of a main pole air bearing surface of a magnetic head for perpendicular recording, the central portion is formed closer to the leading side than the corners on the trailing side, such that the main pole air bearing surface is formed in the shape of a recess with respect to the tailing side. As a result, it is possible to linearize the magnetic field distribution on the trailing side whereby the magnetic reversal is determined, and to record a bit without curving the shape of magnetic reversal.

Abstract: A method for flattening a sample surface by irradiating the sample surface with a gas cluster ion beam, generates clusters of source gas in a cluster generating chamber, ionizes the generated clusters in an ionization chamber, accelerates the ionized cluster beam in an electric field of an accelerating electrode, selects a cluster size using a magnetic field of a sorting mechanism, and irradiates the surface of a sample. An irradiation angle between the sample surface and the gas cluster ion beam is less than 30° and an average cluster size of the gas cluster ion beam is 50 or above.

Abstract: A method is presented for repairing damaged photomasks for electronic component fabrication processes, particularly for fabrication of the ABS of a disk drive slider. The method includes applying an overcoat of material having index of fraction which is close to the index of refraction of the photoresist material of the damaged photomask to produce a non-scattering boundary surface. The overcoat material preferably includes an overcoat base material which is a polymer having an index of refraction which is in the range of plus or minus 0.1 from the index of refraction of said photoresist material.

Abstract: A method of manufacturing a sample for an atom probe analysis of the invention is made one going through a step of manufacturing a concave/convex structure in both of a base needle and a transplantation sample piece by an etching working of an FIB, a step of jointing mutual members, and a step of bonding such that the concave/convex structure becomes a mesh form by a deposition working of the FIB.

Abstract: A method for measuring recession in a wafer undergoing an asymmetrical ion mill process. The method includes the formation of first and second reference features and possibly a dummy feature. The reference features are constructed such that the location of the midpoint between them is unaffected by the asymmetrical ion mill. By measuring the distance between a portion of the dummy feature and the midpoint between the reference features, the amount of recession of the dummy feature can be measured. The measurement can be used to calculate the relative location of the flare to the read sensor rear edge through overlay information. By keeping the angles of the sides of the features steep (ie. nearly parallel with the direction in which the ion mill is asymmetrical) the amount of material consumed on each of the reference features is substantially equal and the midpoint between the reference features is substantially stationary.

Abstract: A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method allows the write head to be formed with a write pole having a concave trailing edge. The method further allows the amount of concavity of the trailing edge to be accurately and carefully controlled both within a wafer and between wafers. A write pole is formed using a mask that includes a hard mask, a RIEable layer and an endpoint detection layer. A layer of non-magnetic material (ALD layer) h deposited, and then, an ion milling process is used to remove a portion of the ALD layer disposed over the write pole and mask. A reactive ion etch process is performed to remove the RIEable layer leaving the ALD layer to form non-magnetic side walls with upper portions that extend above the write pole.

Abstract: A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer. A reactive ion milling step is then conducted to remove the unmasked portions of the stencil layer. Where the stencil layer is composed of an organic compound, such as Duramide and/or diamond-like-carbon, a reactive ion milling step utilizing oxygen species produces a stencil of the present invention having exceptionally straight side walls with practically no undercuts. Thereafter, an ion milling step is undertaken in which the sensor layers that are not covered by the stencil are removed. The accurately formed stencil results in correspondingly accurately formed side walls of the remaining central sensor layers. A magnetic head sensor structure having a desired read track width and accurately formed side walls is thus fabricated.

Abstract: A PVD coating is disclosed, and in particular a nanoscale multilayer superlattice PVD coating comprising high hardness, a low friction coefficient and increased chemical inertness. The multilayer coating comprises a repeating bilayer represented by (VxMe(i-x))CyN(i-y)/(MezV(1-z))CyN(i-y) where 0.1?x?0.9; 0.01<y<0.99 and 0.1?z?0.9 and Me is a substantially pure metal or a metal alloy. The composition of the coating through the layers alternates from layer to layer according to a V-rich layer and a Me-rich layer modulated sequence. Vanadium is incorporated within the layer composition and has been found to act as a lubricating agent during sliding wear. Carbon, also incorporated within the coating, serves to further stabilise the friction coefficient thereby increasing the chemical inertness between cutting tool and workpiece material.

Abstract: The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions. The structure can then be processed, with at least a portion of the patterned solid condensate layer on the structure surface, and then the solid condensate layer removed. Further there can be stimulated localized reaction between the solid condensate layer and the structure by directing a beam of energy at at least one selected region of the condensate layer.

Abstract: An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.

Abstract: In an ion milling system and an ion milling method for making unnecessary the effort of resetting a sample in a sample stage mechanism whenever a machining region is changed, the system includes an ion gun that generates an ion beam with which a sample is to be irradiated, a sample chamber within which the sample to be subjected to irradiation processing by the ion beam is put, an exhaust that evacuates air in order to maintain vacuum in the sample chamber, a gas injection mechanism that injects ion-generating gas, and a sample stage mechanism in which the sample is placed and which rotates with the sample set thereon.

Abstract: The invention describes a sample carrier (3) for thinning a sample (1) taken from e.g. a semiconductor wafer. The sample carrier comprises a ridged part (5), e.g. made of e.g. copper, with an outer boundary (6), and a supporting film (4), e.g. made of carbon, extending beyond the outer boundary. By placing the sample on the supporting film, the sample can be attached to the rigid structure using e.g. IBID. The supporting film aligns the samples when they are placed onto it. After attaching the sample to the rigid structure the sample can be thinned with e.g. an ion beam, during which thinning the supporting film is locally removed as well. The invention results in better alignment of the sample to the sample carrier, and also in more freedom how the sample is transported from the wafer to the sample carrier, e.g. with the help of an electrically charged glass needle (2). The latter eliminates the attaching/severing steps that are normally associated with the transport of a sample to a sample carrier.

Abstract: A wafer holding device for etching process, includes a base pallet; a cover pallet disposed on the base pallet, the cover pallet having at least one receiving hole defined therein; a base pad located on the base pallet and contained in the receiving hole; and a wafer jig placed on the base pad and contained in the receiving hole. At least one gas-diluting recess is formed in a surface of the cover pallet, the surface being spaced away from the base pallet, the gas-diluting recess being communicated with the receiving hole to dilute byproduct gases generated during the etching process. The invention also discloses a method for controlling etch rate of a wafer to be etched during an etching process.

Abstract: A method of manufacturing a thin film magnetic head can suppress dulling of a magnetic pole tip portion of a write magnetic pole during ion milling carried out when forming the write magnetic pole, and can also suppress fluctuation and nonuniformity in the write core width of the write magnetic pole. The method includes a laminating process of successively laminating a lower magnetic pole layer, a gap layer on the lower magnetic pole layer, and an upper magnetic pole layer on the gap layer to produce a laminated film and an ion milling process of irradiating the laminated film produced by successively laminating the lower magnetic pole layer, the gap layer, and the upper magnetic pole layer from above with an ion beam to trim the laminated film to a narrow width and thereby form the lower magnetic pole layer, the gap layer, and the upper magnetic pole layer into a write magnetic pole.

Abstract: This invention describes a manufacturable method, including a CMP liftoff process, for removing masking materials after ion milling for fabricating the write pole of a magnetic head. Significant parameters for the CMP assisted liftoff process include the thickness of the remaining mask materials after the write pole ion milling for effective CMP assisted liftoff, the thickness of the dielectric fill material deposited to protect the write pole during the CMP liftoff step, and the type of CMP slurry, polishing pad and the polishing conditions that are required to yield satisfactory results.

Abstract: A structured diamond tool having a predefined grayscale grating profile shape allows a corresponding grayscale grating profile to be machined into a work piece with a single pass with high accuracy. Manufacture of grayscale gratings using this technique saves time compared to the situation where the profile is machined by a single-point diamond tool with multiple passes. Also, more time-saving is realized if more than one period is machined in the diamond tool. Such a tool can be manufactured using a high precision focused ion beam (FIB), which is a true nanomachining tool that can machine features on the order of tens of nanometers. The diamond tool made by FIB therefore has extremely fine resolution and features required by the grayscale grating.

Abstract: A method comprises depositing first and second lead layers in end regions which surround a central region; and forming a read sensor in the central region such that a first edge of the read sensor is disposed above an edge of the first lead layer and a second edge of the read sensor is disposed above an edge of the second lead layer. In one approach, first and second bias layers are deposited in end regions over the first and the second lead layers. The read sensor is formed in the central region such that the first edge of the read sensor is disposed above an edge of the first bias layer and the second edge of the read sensor is disposed above an edge of the second bias layer. Third and fourth bias layers are deposited adjacent the read sensor. Methods taking different approaches are also presented.

Abstract: A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

Abstract: A focused particle beam system, according to one embodiment of the invention, precisely shapes a pole-tip assembly formed by a multi-layer device having a first layer with a first structural element, a second layer with a second structural element, and a shielding layer with a shielding element, the shielding element being located between the first layer and the second layer. The focused particle beam system mills the second structural element without irradiating a first structural element. The system images a selected portion of the multi-layer device to locate the shielding element and thereby avoids irradiating the first structural element. The shielding element separates the first structural element from the second structural element. Based on the location of the shielding element, the system images and mills the second structural element without irradiating the first structural element.

Abstract: The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires, and semiconductors in other forms.

Abstract: A method for making a magnetoresistive read head so that the pinned ferromagnetic layer is wider than the stripe height of the free ferromagnetic layer uses ion milling with the ion beam aligned at an angle to the substrate supporting the stack of layers making up the read head. The stack is patterned with photoresist to define a rectangular region with front and back long edges aligned parallel to the read head track width. After ion milling in two opposite directions orthogonal to the front and back long edges, the pinned layer width has an extension. The extension makes the width of the pinned layer greater than the stripe height of the free layer after the substrate and stack of layers are lapped. The length of the extension is determined by the angle between the substrate and the ion beam and the thickness of the photoresist.

Abstract: The present invention includes a method, apparatus and system for nanofabrication in which one or more target molecules are identified for manipulation with an electron beam and the one or more target molecules are manipulated with the electron beam to produce new useful materials.

Abstract: A method for reducing noise in a lapping guide. Selected portions of a magnetoresistive device wafer are bombarded with ions such that a magnetoresistive effect of lapping guides is reduced. The device is lapped, using the lapping guides to measure an extent of the lapping.

Abstract: A method of making electromagnetic wave shielded read and write wires is provided. The method includes forming a bottom insulation layer on a bottom shield layer formed on a substrate. Then, forming electrically conductive wire material into openings in a first forming layer to form first and second read wires and first and second write wires. Forming a top insulation layer on the bottom insulation layer and on the wires. Then, forming a second forming layer on the top insulation layer with first, second, third, fourth and fifth openings down to the top insulation layer. Ion milling portions of the top insulation layer exposed by the openings in the second forming layer down to the bottom shield layer, then removing the second forming layer. Then, forming nonmagnetic electrically conductive middle shield layers in the openings in electrical contact with the bottom shield layer and forming a top shield layer on top of the middle shield layer.

Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.

Abstract: A system and method for performing sputter etching includes an ion source that generates an ion current that is directed at a substrate and an electron source that generates an electron current directed at the substrate. Biasing circuitry biases the substrate with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from a positive voltage source with respect to ground, a negative voltage source with respect to ground and a high frequency switch. At least one current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the substrate during one or more cycles of the a-symmetric bi-polar DC voltage pulse signal. A control system, coupled to the at least one current sensor, varies the ion current independently from the electron current. The ion and electron sources create a continuous plasma that is proximate the substrate and the biasing circuitry causes the substrate to alternatively attract ions and electrons from the plasma.