Abstract: An improved interconnection system for attaching an improved cylindrical magnetron target to a rotatable flanged spindle incorporates an annular extension on the target, which fits over the edge of the spindle flange, facilitates centering the target on the spindle, and helps shield target sealing surfaces. The annular extension terminates in an inwardly-angled circumferential step. The target-spindle interconnection system includes a split clamping collar and a generally annular retainer ring that slidable over the spindle shaft and rotatable against the spindle flange, the retainer ring having external circumferential threads that are angled away from the flange. The split clamping collar has, at one end, an inwardly-angled lip that engages the overhanging step and, at the other end, inwardly-angled, internal, circumferential threads that engage the threads of the retainer ring to draw the target and spindle together as a unified assembly as the retainer ring is rotated.

Abstract: A hollow cathode sputtering target and associated magnetron. The target includes a tubular sidewall and a circular roof forming a cylindrical vault arranged about an axis. The sidewall is surrounded by a first set of magnets of a first magnetic polarity along the axis. A second set of magnets, disposed in back of the roof, and asymmetric and rotatable about the axis, includes an outer pole preferably of the first magnetic polarity surrounding an inner pole of the opposed magnetic polarity and of lesser total magnetic intensity. Optionally, the roof and sidewall are separate members having individual power supplies. Further optionally, the first set of magnets are asymmetric and rotatable with the second set of magnets about the axis.

Abstract: A hollow cylindrical target for a cathode sputtering unit with a hollow cylindrical sputtering material and a target holder is disclosed. The sputtering material has an annular cross section and concentrically surrounds a longitudinal segment of the target holder. The target holder extends out of the sputtering material at least at one end of the target to allow connection to the cathode sputtering unit. The at least one part of the target holder that extends from the sputtering material is a single part that can be detached from the target by at least one screw fitting.

Abstract: A high-power ion sputtering magnetron having a rotary cathode comprising a conducting member disposed within the rotary cathode being made of an electrically conductive material for conducting electrical current from the power supply to the rotary cathode. The ion sputtering magnetron also has an electromagnetic field shield disposed between the conducting member and the drive shaft portion. The field shield is made of an electromagnetic field-permeable material such as a ferrous material for reducing damage to parts adjacent to the rotary cathode that are susceptible to inductive magnetic heating.

Abstract: A hollow cathode magnetron comprises an open top target within a hollow cathode. The open top target can be biased to a negative potential so as to form an electric field within the cathode to generate a plasma. The magnetron uses at least one electromagnetic coil to shape and maintain a density of the plasma within the cathode. The magnetron also has an anode located beneath the cathode. The open top target can have one of several different geometries including flat annular, conical and cylindrical, etc.

Abstract: A system and method for reducing and controlling the number of defects due to carbon inclusions on magnetic media is disclosed. A diamond like carbon protective layer is deposited on magnetic media using a rotary cathode target assembly. The target and cathode are cylindrical in shape and are mounted on holder that allows the target and cathode to rotate while holding a magnet fixed. The target surface is periodically swept in through a plasma which sputters off the surface of the target. This prevents the build up of redeposited material on the target and consequently keeps the target surface cleaner. The reduction of redeposited material on the target surface reduces the number of unwanted particulates which are ejected from the surface, manifesting themselves as disk defects.

Abstract: A magnetron includes a decoupling plate (16) located between the end hat (15) of the magnetron cathode (21) and an output coupling member (11). The use of the decoupling plate (16) presents a high impedance and gives a resonant circuit which is arranged to be resonant at the operating frequency of the magnetron. This prevents or reduces power loss due to capacitive coupling. In another arrangement, the decoupling plate (20) is mounted be a post (21) on the end hat (15) of the magnetron cathode (1).

Abstract: A hollow cylindrical target for a cathode sputtering unit with a hollow cylindrical sputtering material and a target holder. The sputtering material has an annular cross section and concentrically surrounds a longitudinal segment of the target holder. The target holder extends out of the sputtering material at least at one end of the target to allow connection to the cathode sputtering unit. The at least one part of the target holder that extends from the sputtering material is a single part that can be detached from the target by at least one screw fitting.

Abstract: An AC/DC cylindrical magnetron with a drive system that absorbs large variations in the rotation of the target tube, an efficient high capacity electrical transfer system, and improved electrical isolation.

Abstract: A cylindrical target is obtained by joining a backing tube made of metal as an inner cylinder and a target material as an outer cylinder via a buffer member 52 such as a carbon felt. The cylindrical target broadens the possibility of selecting the target material and the material for a backing tube for supporting this, simplifies manufacturing and enables recycling.

Abstract: A cylindrical magnetron having a cylindrical cathode surrounding a cylindrical target. The cathode is without features extending inwards thereof at either end such that the target may be axially removed from or installed into the cathode from either end. The target is positioned and axially retained within the cathode by resilient means operative between the outer surface of the target and the inner surface of the cathode. The invention is especially useful in magnetron assemblies having a plurality of abutting, coaxially disposed magnetrons, wherein all the targets may be removed and replaced from the cathode assembly without requiring disassembly and reassembly of the cathodes.

Abstract: An array of unbalanced magnetrons arranged around a centrally-located space for sputter coating of material from target electrodes in the magnetrons onto a substrate disposed in the space. The electrodes are powered in pairs by an alternating voltage and current source. The unbalances magnetrons, which may be planar, cylindrical, or conical, are arranged in mirror configuration such that like poles are opposed across the substrate space or are adjacent on the same side of the substrate space. The magnetrons are all identical in magnetic polarity. A positive plasma potential produced by the AC driver prevents electrons from escaping to ground along the unclosed field lines, increasing plasma density in the background working gas and thereby improving the quality of coating being deposited on the substrate.

Abstract: A magnetron source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity. Step coverage uniformity is also improved by controlling the magnetic fields, and thus the flow of ions and electrons, near the plane of the substrate.

Abstract: Apparatus for creating subatmospheric high plasma densities in the vicinity of a substrate in a work space for use in magnetron sputter deposition aided by ion bombardment of the substrate. Unbalanced flux lines emanating from cylindrical or frusto-conical targets cannot be captured across the work space, because the energizing magnets are cylindrical, and instead converge toward the axis of the apparatus to provide a high flux density, and therefore a high plasma density, in the vicinity of a substrate disposed in this region. The plasma profile and the coating material profile within the work space are both cylindrically symmetrical, resulting in a consistent and predictable coating on substrates.

Abstract: The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is located in the bearing housing for sealing the drive shaft to the housing. An at least one electrical contact is disposed between a power source and the cathode for transmittal of an oscillating or fluctuating current to the cathode. The electrical contact between the power source and the cathode is disposed inside of the vacuum chamber, greatly reducing, and almost eliminating, the current induced heating of various bearing, seals, and other parts of the rotatably sputter cathode assembly.

Abstract: A PVD system comprises a hollow cathode magnetron with a downstream plasma control mechanism. The magnetron has a hollow cathode with a non-planar target and at least one electromagnetic coil to generate and maintain a plasma within the cathode. The magnetron also has an anode located between the cathode and a downstream plasma control mechanism. The control mechanism comprises a first, second and third electromagnetic coil beneath a mouth of the target, vertically spaced so as to form a tapered magnetic convergent lens between the target mouth and a pedestal of the magnetron.

Abstract: A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Abstract: A novel hollow cathode magnetron source is disclosed. The source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity.

Abstract: An improved interconnection system for attaching an improved cylindrical magnetron target to a rotatable flanged spindle incorporates an annular extension on the target, which fits over the edge of the spindle flange, facilitates centering the target on the spindle, and helps shield target sealing surfaces. The annular extension terminates in an inwardly-angled circumferential step. The target-spindle interconnection system includes a split clamping collar and a generally annular retainer ring that slidable over the spindle shaft and rotatable against the spindle flange, the retainer ring having external circumferential threads that are angled away from the flange. The split clamping collar has, at one end, an inwardly-angled lip that engages the overhanging step and, at the other end, inwardly-angled, internal, circumferential threads that engage the threads of the retainer ring to draw the target and spindle together as a unified assembly as the retainer ring is rotated.

Abstract: A cathode assembly for magnetron sputtering of a workpiece, and sputtering apparatus and methods of sputtering using same are provided. The cathode assembly includes a tubular cathode, which may be cylindrical in cross section along its length, or which may be curved or flexible, depending on the shape of workpiece that is to be sputtered, and which has a sputtering length of Ls. The cathode assembly also includes a magnet package, or a plurality of spaced magnet packages, each magnet package including either one magnet or a plurality of spaced magnets of alternating polarity, and having a magnet package length Lpkg which is less than Ls. The cathode assembly further includes one or more means for positioning, and preventing radial displacement of, the cathode along the axis of symmetry of the cathode.

Abstract: A Josephson junction includes first and second electrodes, each of which is formed of superconductive material. The first electrode has a first electrode face. A barrier of the junction extends from the first electrode to the second electrode. The barrier has a first barrier face opposing and adjoining the first electrode face. The barrier is formed of non-superconductive barrier material and superconductive barrier material. A concentration of the superconductive barrier material is greater than zero at the first barrier face, whereby the first barrier face is formed at least partially of the superconductive barrier material.

Abstract: A hollow cylindrical target for a cathode sputtering unit with a hollow cylindrical sputtering material and a target holder. The sputtering material has an annular cross section and concentrically surrounds a longitudinal segment of the target holder. The target holder extends out of the sputtering material at least at one end of the target to allow connection to the cathode sputtering unit. The at least one part of the target holder that extends from the sputtering material is a single part that can be detached from the target by at least one screw fitting.

Abstract: A sputter deposition apparatus for depositing a film onto a substrate includes a surrogate rotating magnetron includes an internal magnet and a wall thickness that permits a fringe magnetic field to support an electron cyclotron resonance. Auxiliary coating sources are modulated for depositing a desired sequence of material onto the substrate.

Abstract: A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well.

Abstract: An apparatus and method for the cathodic magnetron sputtering of a coating onto a temperature-sensitive substrate. The apparatus comprises a vacuum chamber having a work supporting station and a magnetron sputtering target in sputtering opposition to the work supporting station, the apparatus producing a magnetic field serving to contain, in an oval pattern, a gas plasma cloud to eject target material toward the work supporting station. To control the temperature of the substrate being coated, a cooling anode is positioned within the sputtering chamber and is adjusted as to position so as to be close enough to the cathode target to capture primary electrons that otherwise would impinge upon the substrate, but yet oriented, with respect to the cathode, in a position that does not cause interference with the magnetic field.

Abstract: The invention relates to a vapor deposition coating apparatus. More particularly it relates to an apparatus in which the ion current density is carefully controlled to improve coating. This control enhances the versatility and enlarges the range of deposition conditions which can be achieved within a single apparatus, so that coatings with very different properties can be deposited in the same equipment. The vapor deposition apparatus includes a vacuum chamber, at least one coating means or ionization source disposed at or about the periphery of a coating zone, one or more internal magnetic means positioned such that the magnetic field lines are generated across the coating zone and means for altering the strength or position of the magnetic field lines to aid confinement.

Abstract: A sputtering magnetron with a rotating cylindrical target and a stationary magnet assembly (22, 24*) is described, the magnet assembly (22, 24*) being adapted to produce an elongate plasma race-track on the surface of the target, the elongate race-track having substantially parallel tracks over a substantial portion of its length and being closed at each end by end portions (22′), wherein the spacing between the tracks of the race-track is increased locally to materially effect sputtering onto a substrate. The increase in spacing may be at the end portions or along the parallel track portion. The increase in spacing may provide more even erosion of the target beneath the end portions of the race-track, and provide more even coatings on the substrate.

Abstract: An improved interconnection system for attaching an improved cylindrical magnetron target to a rotatable flanged spindle incorporates an annular extension on the target, which fits over the edge of the spindle flange, facilitates centering the target on the spindle, and helps shield target sealing surfaces. The annular extension terminates in an inwardly-angled circumferential step. The target-spindle interconnection system includes a split clamping collar and generally annular retainer ring that slidable over the spindle shaft and rotatable against the spindle flange, the retainer ring having external circumferential threads that are angled away from the flange. The split clamping collar has, at one end, an inwardly-angled lip that engages the overhanging step and, at the other end, inwardly-angled, internal, circumferential threads that engage the threads of the retainer ring to draw the target and spindle together as a unified assembly as the retainer ring is rotated.

Abstract: A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. Vertically mounted, dual rotatable cylindrical magnetrons with associated vacuum pumps form semi-isolated sputtering modules, which can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point. The apparatus may take the form of a circular arrangement of modules for batch coating of wafer-like substrates, or the modules may be arranged linearly for the coating of large planar substrates.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. In one embodiment, a chamber having one or more current return plates, a support member, an electromagnetic field generator and a support member is provided. The target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. During processing, a bias is applied to the support member by an RF power source. The return plates are selectively energized to provide a return path for the RF currents, thereby affecting the orientation of an electric field in the chamber.

Abstract: The uniformity, density and directionality of an ionized metal plasma is significantly improved by positioning a cylindrical target between an RF coil and the chamber wall and wafers above and below the coil at opposite ends of the sputtering chamber. Ions generated by electron impact are attracted to the biased substrates, thereby providing essentially void free interconnections through insulating layers having through holes with very high aspect ratios.

Abstract: Two mutually opposite sputtering surfaces of at least one target are self-enclosed such that a closed loop gap, and consequently a closed loop plasma discharge space, is formed. A gas flow is created between the sputtering surface and directed against workpieces. No gap ends exist on the closed loop gap so that electrons that move along and within the plasma loop can recirculate until most of their energy has been transferred through impacts to the gas particles.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

Abstract: A cathode arrangement for physical vapor deposition onto substrates with high aspect ratio features for achieving high flat-field uniformity. The cathode arrangement includes two cathodes, a planar cathode and a conical cathode, where the conical cathode is truncated to provide an orifice in which the planar cathode is oriented. The angular distributions of sputtered atoms from the two cathodes complement one another to provide more uniform deposition.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls.

Abstract: Material utilization and process stability for a rotating cylindrical magnetron target used in a sputtering system are improved by incorporation of a second magnet structure or “race track”, allowing the power density on the target surface to be reduced by approximately 50% for any given point where magnetic confinement of the plasma exists. Offsetting one race track relative to the other along the longitudinal axis of the target reduces the power density at each turn-around area (relative to the longitudinal area). Modestly increasing the target material thickness at the ends of the target allows nearly all of the material between the turn-around areas to be sputtered.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls.

Abstract: The invention provides a sputtering system which consists of an ion beam and a target of a sputterable material. A distinguishing feature of the system of the invention is that the sputtering target forms a guide channel for an ion beam and sputtered particles, so that a portion of the ions collides with the walls of the target inside a closed volume of the target and forms neutral sputterable particles impinging the object. The other part of the ions goes directly to the object and participates in an ion-assisted overcoating. Thus, the special form of the target improves efficiency of sputtering, prevents scattering and the loss of the sputterable material. The system can be realized in various embodiments. One of the embodiments provides a multiple-cell system in which each cell has an individual ion-emitting slit formed by the end of a cathode rod of one cathode plate and the opening in the second cathode plate.

Abstract: A magnetron for use in a DC magnetron sputtering reactor that can rotate at a smaller diameter during a deposition phase and at a larger diameter during a cleaning phase, whereby sputter material redeposited outside of the deposition sputtering track is removed during the cleaning phase. An embodiment for a two-diameter magnetron includes a swing arm fixed on one end to the magnetron rotation motor shaft and on the other end to a pivot shaft, pivotably coupled to the magnetron. When the magnetron is rotated in different directions, hydrodynamic forces between the magnetron and the chilling water bath cause magnetron to pivot about the pivot shaft. Two mechanical detents fix the limits of the pivoting and hence establish the two diameters of rotation.

Abstract: In a sputtering device with magnetic amplification, a magnetic field is generated by means of a permanent magnet system, whose lines of force run above and penetrate the sputtering surface, whereby the permanent magnet system is formed of two dosed, coaxial circular or oval rows (7, 8) of individual magnets (5, 5′ . . . , 6, 6′ . . . ) that are connected via a yoke (15), whereby the surface of the target (3) that faces away from the rows of permanent magnets (7, 8) is formed of two partial surfaces (3a, 3b) that form an angle to each other and whereby the edge (3c) that is formed by the two partial surfaces (3a, 3b) runs parallel to the two rows (7, 8) of permanent magnets (5, 5′ . . , 6, 6′ . . . ) and whereby an insert (14) made of ferromagnetic material is inserted between the magnetic yoke (15) and the surface of the target (3) that faces the magnetic yoke (15).

Abstract: An elongate emitter is used as a cathode to coat material onto a cylindrical workpiece by magnetron sputterinig. Where the inside surface of the workpiece is coated, the workpiece itself is used as the vacuum sputtering chamber. The overlap between the plasma field and the magnetic field creates a coating zone which is moved along the length of the workpiece to evenly coat the workpicce.

Abstract: A hollow cathode magnetron (HCM) sputter source includes a main magnet positioned near the sidewall of the hollow cathode target and a pair of rotating magnet arrays that are positioned near the closed end of the hollow cathode target. One of the arrays produces a magnetic field that is aligned with (aids) the magnetic field produced by the main magnet; the other arrays produce a magnetic field that is aligned against (bucks) the magnetic field produced by the main magnet. Field lines produced by the magnet arrays contain an extension of the plasma that is controlled by the main magnet. Charged particles circulate between the two portions of the plasma. The extended plasma is thus formed over a very high percentage of the surface of the target, thereby creating an erosion profile that is highly uniform and encompasses essentially the entire face of the target. This maximizes the utilization of the target and minimizes the frequency at which the spent target must be replaced.

Abstract: An apparatus is disclosed for the coating of substrates (10) with thin films, having a vacuum chamber (1), a target (6) to be atomized, situated opposite the substrate (10) in the vacuum chamber (1), with magnets (19, 19′, 19″; 20, 20′, 20″) to produce a magnetic tunnel in front of the area of the target (6) to be atomized, an inlet (8) for a process gas into the process space (11), an anode (12), which is electrically insulated with respect to the vacuum chamber (1), and a current-voltage supply to produce a plasma in front of the target (6). The target (6) is shaped as a rotation-symmetrical body, which provides a ring-shaped enclosure around the substrate (10), wherein the magnets (19,19′, . . . ; 20,20′, . . . ) are supported on the side of the hollow cylindrical target (6), facing away from the substrate (10), and can move around the rotational axis (R) of the target (6).

Abstract: A novel hollow cathode magnetron source is disclosed. The source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity.

Abstract: A method of applying a coating to a metallic article (10) comprises placing the metallic article within a hollow cathode (38) in a vacuum chamber (30), evacuating the vacuum chamber (30), applying a negative voltage to the hollow cathode (38) to produce a plasma and such that the material of the hollow cathode (38) is sputtered onto the metallic article (10) to produce a coating (22). A positive voltage (V1) is applied to the metallic article (10) to attract electrons from the plasma to heat the coating (22) and so inter-diffuse the elements of the metallic article (10) and the protective coating (22) and a negative voltage (V2) is applied to the metallic article (10) to attract ions from the plasma to bombard the coating (22) to minimize defects in the coating (22).