Abstract: Embodiments disclosed herein include an RF return assembly. In an embodiment, the RF return assembly comprises a first plate with a flange, where a first hole and a second hole pass through the flange. The RF return assembly may further comprise a second plate over the first plate, and a first body positioned above the flange. In an embodiment, the RF return assembly further comprises a second body positioned below the flange, where the first body is affixed to the second body by a pillar that passes through the first hole. In an embodiment, the RF return assembly further comprises a spring attached between the second plate and the second body, where the spring passes through the second hole, and a conductive band to electrically couple the first body to the flange.

Abstract: A chemical vapor deposition (CVD) system may include a chamber, a susceptor provided in the chamber to support a substrate, a gas distribution part provided over the susceptor, a first ground strap bar provided on a bottom inner surface of the chamber and electrically connected to the chamber, a second ground strap bar provided on a bottom surface of the susceptor and electrically connected to the susceptor, and a plurality of ground straps electrically connected to the first and second ground strap bars, each of the plurality of ground straps including two opposite portions that are fastened to the first and second ground strap bars, respectively.

Abstract: Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield having a first main side facing an ion beam target, and a connection block coupled to a second main side of the first shield. The shield assembly may further include a mounting plate coupled to the connection block, and a second shield coupled to the mounting plate by a bracket. In some embodiments, the first shield and/or one or more process chamber walls includes a foam material, such as a conductive or nonconductive foam.

Abstract: A vacuum processing apparatus having a small installation area is provided. A lifting plate is arranges inside a vacuum chamber, and a substrate holding device is arranged on the lifting plate to be able to be lifted up and down. An upper side processing device and a lower side processing device are provided in a processing region located beside a lifting region where the lifting plate moves up and down. An upper side moving device and a lower side moving device make the substrate holding device pass through the processing region, and a transfer device transfers the substrate holding device between the upper side moving device or the lower side moving device and the lifting plate. Because vacuum processing can be performed on the upper side and the lower side, the installation area of the vacuum processing apparatus is small.

Abstract: Chambers for processing semiconductor wafers are provided. One such chamber includes an electrostatic chuck having a surface for supporting a substrate. A ground assembly is provided that surrounds a periphery of the electrostatic chuck. The ground assembly includes a first annular part and a second annular part and a space between the first annular part and the second annular part. A conductive strap having flexibility is provided. The conductive strap is annular and has a curved cross-sectional shape with a first end and a second end. The conductive strap is disposed in the space such that the first is electrically connected to the first annular part and the second end is electrically connected to the second annular part. The curved cross-sectional shape has an opening that faces away from the electrostatic chuck when the annular conductive strap is in the space.

Abstract: Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

Abstract: The invention relates to a process for applying solid layers (14) to an object (12) to be coated by means of at least one radiation source (2), in particular a laser radiation source, which comprises at least the step of removal of a sample (4) in the solid state in at least partially different sections (6) by means of at least one beam (8) emitted by the radiation source (2) to at least partly convert the sample (4) into a gaseous state (10) which deposits at least partially on the object (12) to be coated in order to form a solid layer (14), where at the same time the alignment of a trace of the emitted beam (8) is altered during the step of removal of the sample and the sample (4) is moved.

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.

Abstract: Systems and methods for constructing a thin film mirror are provided. The apparatus includes a vacuum chamber having edges. Adjacent the vacuum chamber is at least one extender having an edge that is spaced from and extending beyond the adjacent edge of the vacuum chamber in two directions. In this manner, the thin film does not contact the vacuum chamber until force is applied to the thin film, such as by mechanical tensioning mechanisms or application of a partial vacuum.

Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.

Abstract: A system for use in coating an interior surface of an object, the system including a vacuum chamber enclosure defining an interior cavity configured to receive the object, a first electrode positioned within the interior cavity of the vacuum chamber enclosure, and a second electrode positioned within the interior cavity such that a space between the first and second electrodes is at least partially defined by the interior surface of the object. The first electrode is fabricated from a first material and the second electrode is fabricated from a second material. The system includes an arc supply coupled to the first and second electrodes. The arc supply selectively vaporizes material from one of the first electrode and the second electrode when current is supplied from one of the first and second electrodes such that the vaporized material forms a layer of material on the interior surface of the object.

Abstract: Apparatuses for deposition of one or more layers. In one aspect, an apparatus for deposition of one or more layers includes an anode; a cathode; a vacuum chamber including the anode and the cathode; a sensor configured to detect an electric potential between a section of the at least one anode and a section of the chamber. Furthermore, methods to monitor a device for deposition of one or more layers are also described.

Abstract: A process for manufacturing a transparent body for use in a touch screen panel is provided.

Abstract: Apparatus and methods to incorporate p-type dopants in II-VI semiconducting layers are disclosed herein. In some embodiments, radical nitrogen is introduced in a physical vapor deposition apparatus operating at moderate pressures (e.g. 10?5 Torr to 100 Torr). The radical nitrogen allows for in-situ doping of II-VI materials, such as ZnTe, to degenerate levels.

Abstract: The antenna has a structure that the high frequency electrode is received in a dielectric case. The high frequency electrode has a go-and-return conductor structure that two electrode conductors are disposed close to and in parallel to each other with a gap therebetween to form a rectangular plate shape as a whole, and the two electrode conductors are connected by a conductor at an end in the longitudinal direction. A high frequency current flows in the two electrode conductors in opposite directions. A plurality of openings are formed on edges of the two electrode conductors on the side of the gap, and the openings are dispersed and arranged in the longitudinal direction of the high frequency electrode. The antenna is disposed in a vacuum container in a direction that a main surface of the high frequency electrode and a surface of the substrate are substantially perpendicular to each other.

Abstract: A device and method for coating an inside surface of a vessel is provided. In one embodiment, a coating device comprises a power supply and a diode in electrical communication with the power supply, wherein electrodes comprising the diode reside completely within the vessel. The method comprises reversibly sealing electrodes in a vessel, sputtering elemental metal or metal compound on the surface while maintaining the surface in a controlled atmosphere.

Abstract: Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.

Abstract: Methods for reducing the surface roughness of magnetic media to be used in storage drives are described. One such method includes forming a recording media on a substrate, the recording media including at least one recording layer configured to store information magnetically, depositing a first layer of carbon on the recording media, the first carbon layer having a first average preselected thickness, etching the first carbon layer to have a second average preselected thickness less than the first average preselected thickness, depositing a second layer of carbon on the etched first carbon layer, the second carbon layer having a third average preselected thickness that is less than the first average preselected thickness, and implanting nitrogen in the second carbon layer.

Abstract: A manufacturing method for a semiconductor device includes implanting dopants into a silicon carbide substrate, applying a carbon-containing material on at least one surface of the silicon carbide substrate, and heating the silicon carbide substrate having the carbon-containing material applied thereon to form a carbon layer on surfaces of the silicon carbide substrate. The heating is performed in a non-oxidizing atmosphere, and is followed by another heating step for activating the dopants.

Abstract: Various embodiments provide a method and apparatus for forming a three-dimensional article through successive fusion of parts of at least one layer of a powder bed provided on a work table in an additive manufacturing machine, which parts corresponds to successive cross sections of the three-dimensional article. The method comprises the steps of: applying a layer of predetermined thickness of powder particles on the work table, applying a coating on at least a portion of the powder particles, which coating is at least partially covering the powder particles, and fusing the powder particles on the work table with an electron beam.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer.

Abstract: An integrated extreme ultraviolet blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer. A physical vapor deposition chamber for manufacturing an extreme ultraviolet mask blank includes: a target, comprising molybdenum alloyed with boron. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer. An extreme ultraviolet blank includes: a substrate; a multi-layer stack having an amorphous metallic layer; and capping layers over the multi-layer stack.

Abstract: A film-forming apparatus (100) includes: a vacuum chamber (30) configured to store a substrate (34B) in which a through-hole is formed and a source of copper emission (35B); a vacuum pump (36) configured to decompress an interior of the vacuum chamber (30) to a predetermined degree of vacuum; a power supply (80) configured to generate electric power applied to the substrate (34B); and a driving mechanism for use in setting a distance between the substrate (34B) and the source of copper emission (35B). When a copper material emitted from the source of copper emission (35B) is deposited on one main surface of the substrate (34B) to block an opening of the through-hole in the one main surface by means of a deposited film formed of the copper material, a blocked state of the opening blocked by the deposited film is adjusted based on the distance and the electric power.

Abstract: A sputtering apparatus for depositing a material on a substrate through a sputtering process includes a vacuum chamber, a target positioned in the vacuum chamber and capable of sputtering a material to be deposited, a first plate attached for a substrate to be coupled thereto or decoupled therefrom and installed to be rotated in the vacuum chamber for the substrate to face the target, and a second plate installed to be rotated in the vacuum chamber to face the target.

Abstract: A method for forming titanium nitride by PVD is disclosed, comprising: generating ions of a noble gas by glow discharge under a vacuum condition that a nitrogen gas and the noble gas are supplied; nitriding a surface of a wafer and a surface of a titanium target with the nitrogen gas; bombarding the surface of the titanium target with the ions of the noble gas after they are accelerated in an electric field so that titanium ions and titanium nitride are sputtered; and forming a titanium nitride layer by depositing titanium nitride on the surface of the wafer in a magnetic field, while titanium ions are injected into the surface of the wafer so that stress is introduced into the titanium nitride layer, wherein non-crystallization fraction of the titanium nitride layer and stress in the titanium nitride layer are increased by increasing kinetic energy of titanium ions which are injected into the surface of the wafer.

Abstract: In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

Abstract: The present invention relates to a method for recycling a tantalum coil for sputtering that is disposed between a substrate and a sputtering target. The method for recycling a tantalum coil for sputtering is characterized in that the whole or partial surface of a spent tantalum coil is subject to cutting (cutting is performed until a re-deposited film and knurling traces are eliminated) so as to eliminate the re-deposited film that was formed during sputtering, and knurling is newly performed to the cut portion. While sputtered grains are accumulated (re-deposited) on the surface of the tantalum coil disposed between the substrate and the sputtering target during sputtering, by eliminating the sputtered grains accumulated on the spent coil by way of cutting after the sputtering is complete, the tantalum coil can be efficiently recycled. Thus, provided is technology capable of lean manufacturing of new coils, improving productivity, and stably providing such coils.

Abstract: An apparatus and method for manufacturing a thin film encapsulation includes: a first cluster configured to form a first inorganic layer on a display substrate using a sputtering process; a second cluster configured to form a first organic layer on the first inorganic layer on the display substrate using a monomer deposition process; and a third cluster configured to form a second inorganic layer on the first organic layer on the display substrate using a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process.

Abstract: It is an object of the present invention to provide a method of and an apparatus for manufacturing a tunnel barrier layer or a gate insulator film with good film quality and film thickness uniformity. The present invention is characterized in that, a shield is configured to shield a region of a substrate to which an erosion region of a target is projected along a normal from a surface of the target and sputtered particles are configured to deposit on the substrate linearly moved when passing through an opening formed in the shield.

Abstract: A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.

Abstract: Various techniques, methods and devices are disclosed where metal is deposited on a substrate, and stress caused by the metal to the substrate is limited, for example to limit a bending of the wafer.

Abstract: In a simple method and device for producing plasma flows of a metal and/or a gas electric discharges are periodically produced between the anode and a metal magnetron sputtering cathode in crossed electric and magnetic fields in a chamber having a low pressure of a gas. The discharges are produced so that each discharge comprises a first period with a low electrical current passing between the anode and cathode for producing a metal vapor by magnetron sputtering, and a second period with a high electrical current passing between the anode and cathode for producing an ionization of gas and the produced metal vapor. Instead of the first period a constant current discharge can be used. Intensive gas or metal plasma flows can be produced without forming contracted arc discharges. The selfsputtering phenomenon can be used.

Abstract: Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Abstract: A method of processing a semiconductor workpiece includes placing a back surface of the workpiece on a workpiece support in a chamber so that the front surface of the workpiece faces into the chamber for processing, and the back surface is in fluid communication with a back region having an associated back gas pressure. The method further includes performing a workpiece processing step at a first chamber pressure Pc1 and a first back pressure Pb1, wherein Pc1 and Pb1 give rise to a pressure differential, Pb1-Pc1, and performing a workpiece cooling step at a second chamber pressure Pc2 and a second back pressure Pb2, wherein Pc2 and Pb2 are higher than Pc1 and Pb1, respectively.

Abstract: A thin film deposition apparatus includes a process chamber that includes a reaction space, a plasma generating unit, and a sputtering unit. The plasma generating unit generates a plasma in the reaction space. The sputtering unit is independently driven from the plasma generating unit to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma.

Abstract: Systems and methods for site controlled crystallization are disclosed. According to one aspect, a method for forming a composite film is disclosed. In one example embodiment, the method includes forming a layer of amorphous material. The method also includes forming a layer of metal material on each of a plurality of selected regions of the layer of amorphous material to form a structure including the layer of metal material on the layer of amorphous material, and annealing the structure to generate metal-induced crystallization at the interface of the layer of metal material and each of the selected regions of the layer of amorphous material such that crystalline structures are formed.

Abstract: A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.

Abstract: A method, comprising: generating a vapour of a material from a source of said material comprising a plurality of separate solid pieces of said material supported on a surface of a base in a configuration in which said plurality of solid pieces of said target material are arranged at two or more levels to cover the whole of said surface of said base whilst providing a gap between adjacent pieces at the same level; and depositing said material from said vapour onto a substrate.

Abstract: Sputtering chambers including a mesh material covering the inner surfaces within the chamber are generally provided. The sputtering chamber can include a cathode positioned in working proximity to a sputtering target, a target shield extending over at least a portion of the sputtering target while leaving a majority of the sputtering target exposed, and a mesh material positioned on an outer surface of the target shield. Additionally, or alternatively, the sputtering chamber candefine a pair of side walls, a top wall, and a bottom wall, with the mesh material positioned on an inner surface of the side walls, the top wall, and/or the bottom wall. Methods are also generally provided for sputtering a target in a sputtering chamber to deposit a thin film on a substrate.

Abstract: Plural spline shafts are arranged around columnar plasma, and plural spline shafts are coaxially aligned in a direction that the columnar plasma extends within a vacuum chamber. The plural coaxially aligned spline shafts are positioned so that axial gap is formed between the respective male spline sections. The axial gap of the plural male spline sections is positioned at a center of the columnar plasma in the direction that the columnar plasma extends.

Abstract: A sputtering anode is disclosed wherein the anode is in the form of a container or vessel; and, wherein the conducting surface communicating with a cathode is the inside surface of the container or vessel. The anode can be mounted outside of a coating chamber having its opening communicating with the chamber or alternatively may be mounted within the chamber. The anode may be an inlet port for receiving inert gas for use in forming the plasma and for pressurizing the anode.

Abstract: A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

Abstract: Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

Abstract: A method for manufacturing a magnetic media for magnetic data recording that greatly reduces the time required to manufacture the magnetic media. After constructing the magnetic disk with the desired magnetic media layer, a protective overcoat is deposited on the disk. The disk is then exposed to ozone in order to speed the rate of oxidation of the protective overcoat and thereby reduce the time needed to treat the overcoat. After exposing the overcoat to an ozone a lubrication layer can be applied. This process reduces the time necessary to cure the overcoat from a time of about 24 hours to a time range of 10 seconds to 30 minutes.

Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

Abstract: The invention is directed toward a method and apparatus which can be used to allow the sputter deposition of material onto at least one article to form a coating on the same. The new form of magnetron described herein allows an increase in sputter deposition rates to be achieved at higher powers and without causing damage to the coating being created. This can be achieved by improved cooling and use of a relatively high magnetic field in the magnetron while at the same time increasing the power to the magnetron by increasing the current at a rate faster than the voltage.

Abstract: Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 ?L/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.

Abstract: An improved plasma processing chamber is disclosed, wherein some or all of the components which are exposed to the plasma are made of, or coated with, titanium diborane. Titanium diborane has a hardness in excess of 9 mhos, making it less susceptible to sputtering. In addition, titanium diborane is resistant to fluoride and chlorine ions. Finally, titanium diborane is electrically conductive, and therefore the plasma remains more uniform over time, as charge does not build on the surfaces of the titanium diborane components. This results in improved workpiece processing, with less contaminants and greater uniformity. In other embodiments, titanium diborane may be used to line components within a beam line implanter.