Abstract: Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.

Abstract: A continuous coating system has several treatment chambers (1, 2) that are arranged one after the other in such a way that in each case, a wall (3) of one treatment chamber (1) having a passage (5) contacts a wall (4) in the adjacent treatment chamber (2) that also has a passage (6). One of the passages (5) is provided in a sealing insert (7), which supports itself on the same side with a first support surface (9) on the wall (3) of one treatment chamber (1) and with a second support surface (10) against the wall (4) of the adjacent treatment chamber (2). Between the two support surfaces (9, 10) and the respective walls (3, 4), in each case there is a surrounding gasket (13, 14) against the respective support surface (9, 10) and the wall (3, 4).

Abstract: A tensile force is applied to at least a surface of a film to which a conductive material is applied within an elastic limit by a tensile force applying means, the conductive material is applied to a first surface of the film by a coating means in a tensioned state, and thereafter the tensile force is released by a tensile force releasing means to form the film having a conductive sheet for a touch-panel. Preferably, the tensile force applying means is a barrel-shaped roller.

Abstract: A plurality of superconductor particles are formed being of a first material which is relatively brittle and is selected to be in a superconductive state at a relatively high temperature, typically above 77K which is the temperature of liquid nitrogen. A coating layer is formed on each superconductor particle, the coating layer being of a second material selected to be substantially non-reactive with the first material. The coated particles are then mixed with a third material to form a composite wherein the third material is in proximity to the first material but separated by the second material. The third material is selected to be relatively ductile when compared to the first material and to be driven to a superconductive state by the first material when the first material is in a superconductive state and the third material is in proximity to the first material. The second material protects the third material from oxidation by the first material.

Abstract: In the substrate treatment apparatus including substrate treatment chambers (301 and 303) and a buffer chamber (302) having an exhaust system (306b) independent of the substrate treatment chambers, connection tubes (304a and 304b) are provided between the substrate treatment chambers and the buffer chamber, and gas inlets are respectively provided for the connection tubes. A gas (308) for treating a substrate flows from the connection tube (304a) into the substrate treatment chamber (301) and the buffer chamber (302), while a gas (309) for treating a substrate flows from the connection tube (304b) into the substrate treatment chamber (303) and the buffer chamber (302). Accordingly, the gas does not move from the substrate treatment chamber to the buffer chamber against a gas flow, thereby allowing the separation between ambiences.

Abstract: A whole organic EL display fabricating apparatus is provided inside a vacuum chamber. In this case, a first patterning unit B through a third patterning unit D for sequentially forming luminescent layer patterns of GREEN, BLUE, and RED on an anode pattern on a strip-shaped flexible substrate 1, and a fourth patterning unit E for forming a cathode pattern on the subsequent stage are provided. The first patterning unit B is provided with a first cooling can 21 and a vacuum vapor deposition unit below for forming the luminescent layer pattern of GREEN. The structures of the second patterning unit through the fourth patterning unit are similar to that of the first patterning unit. In fabricating a display, the substrate 1 is caused to travel from the first cooling can 21 toward a fourth cooling can 64 by the roll-to-roll system.

Abstract: The disclosure herein relates to a high throughput system for thin film deposition on substrates which can be used in applications such as optical disks, and in particular DVD disks, chip-scale packaging, and plastic based display, for example. An apparatus useful in the production of products of the kind described above includes: (a) a continuously moving web for simultaneously transporting a number of substrates to which a thin film of material is to be applied, wherein the moving web is a roll-to-roll moving web; (b) a central processing chamber which is maintained under vacuum and through which at least a portion of said continuously moving web travels; and, (c) at least one deposition device which is located within said central processing chamber, where at least a portion of said continuously moving web is exposed to material deposited from said deposition device. Typically the deposition device is a magnetron sputtering device.

Abstract: A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

Abstract: A system for coating band-shaped material, where the band-shaped material travels through at least one process chamber in which there is a vacuum, and at least one cooling roller. On the peripheral surface of each cooling roller are at least two magnetron sputter sources that are arranged separate from one another in magnetron chambers, which are formed by separate magnetron chamber walls and allow each chamber to be evacuated, so the pressure in the magnetron chamber can be maintained higher than that in the process chamber. The magnetron chamber walls and the magnetron sputter sources can be mounted on a common carriage, which is displaceable parallel to the cooling roller axis. The result is the reduction in the maintenance costs in cleaning of the magnetron chamber walls and at the same time improvement of the separation of gas between the magnetron chambers and the process chamber.

Abstract: A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

Abstract: A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (39) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (22) exhibiting excellent superconducting properties.

Abstract: This invention relates to a deposited film producing process that enables reduction of the time for adjusting the conditions for film formation, and brings about an improvement in the reproducibility of film thickness and film quality of the deposited film formed. This process comprises the steps of, in the state where a substrate is set in a film-forming chamber, introducing a sputtering gas containing no reactive gas into the film-forming chamber and causing discharge therein, adjusting the sensitivity of a device for monitoring emission intensity of plasma of the discharge, in such a way that the device reads a set value, and introducing at least a reactive gas into the film-forming chamber to deposit a film on the substrate by subjecting a target to sputtering while controlling the feed rate of the reactive gas in such way as to provide a constant deposition rate.

Abstract: A Raman spectrum of a thin film which must be formed is measured in a thin-film forming step for forming the thin film on a member to be processed in an atmosphere, the pressure of which has been reduced. Moreover, the conditions under which the thin film is formed are controlled in accordance with a result of measurement of the Raman spectrum. At this time, the measurement of the Raman spectrum is continuously performed in an in-line manner while the thin film is being continuously formed on the elongated-sheet-like member to be processed. The measurement of the Raman spectrum is performed while the focal point of a probe of a Raman spectrometer is being controlled with respect to the member to be processed or while the output of a laser beam from the Raman spectrometer is being controlled. The thin film which must be. formed is, for example, a protective film of a magnetic recording medium. The protective film is, for example, a hard carbon film (a DLC film).

Abstract: An improved method and apparatus for applying discrete area holograms or other optical devices directly onto documents or other substrates in a continuous process analogous to the operation of a printing press. The continuous process is carried out in a vacuum chamber in which at least two process steps are performed in sequence: the formation of a micro-grooved discrete resin area and a localized coating of it with a reflective or refractive material layer. The formation of the micro-grooved resin area can be accomplished by electron beam curing of the resin. The localized coating of the micro-grooved resin can be done by sputtering. One or more other steps, including pre-coating, post-coating and partial removal of the reflective or refractive layer, may also be carried out as part of the continuous process within the vacuum chamber.

Abstract: A process for forming a coating on a substrate by condensation of a coating material onto the substrate while the substrate is moving through an enclosure under vacuum in which evaporation of the coating material takes place. With the inventive process, deposits with controlled structure and adhesion can be made on moving substrate or support even at very high speeds, so that the process can advantageously be carried out continuously or at variable speed.

Abstract: A method for establishing and maintaining a reliable ground for reactive sputtering systems. A spatially extended high density plasma is generated in a large region surrounding the sputtering target. The plasma electrically connects the target to a part of the coating machine that is not subject to deposition of sputtered material from the target. The plasma is generated by an applicator which is independent of the target.

Abstract: A process and apparatus for coating small particles and fibers. The process involves agitation by vibrating or tumbling the particles or fibers to promote coating uniformly, removing adsorbed gases and static charges from the particles or fibers by an initial plasma cleaning, and coating the particles or fibers with one or more coatings, a first coating being an adhesion coating, and with subsequent coatings being deposited in-situ to prevent contamination at layer interfaces. The first coating is of an adhesion forming element (i.e. W, Zr, Re, Cr, Ti) of a 100-10,000 Å thickness and the second coating or final coating of a multiple (0.1-10 microns) being Cu or Ag, for example for brazing processes, or other desired materials that defines the new surface related properties of the particles. An essential feature of the coating process is the capability to deposit in-situ without interruption to prevent the formation of a contaminated interface that could adversely affect the coating adhesion.

Abstract: In the substrate treatment apparatus including substrate treatment chambers (301 and 303) and a buffer chamber (302) having an exhaust system (306b) independent of the substrate treatment chambers, connection tubes (304a and 304b) are provided between the substrate treatment chambers and the buffer chamber, and gas inlets are respectively provided for the connection tubes. A gas (308) for treating a substrate flows from the connection tube (304a) into the substrate treatment chamber (301) and the buffer chamber (302), while a gas (309) for treating a substrate flows from the connection tube (304b) into the substrate treatment chamber (303) and the buffer chamber (302). Accordingly, the gas does not move from the substrate treatment chamber to the buffer chamber against a gas flow, thereby allowing the separation between ambiences.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface facing the thin-film particle source. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a lateral moving means for laterally moving and controlling a duration of exposure time across a radial direction for each of the substrates for controlling thickness uniformity of the thin-film deposited on each of the substrates.

Abstract: The adhesion of chromium-copper layer to polyimide has been greatly improved by a method which provides controlled reduction, rather than total elimination, of water content in the polyimide. The electronic packaging device which incorporates the flexible circuit prepared by the method exhibits greatly improved reliability. It is believed that the invention can be used to improve the adhesion between other organic materials having moisture affinity and materials comprising in-organics or between two organic materials.

Abstract: A film forming apparatus comprises a sputtering chamber, a cooling drum disposed at an central portion thereof for cooling a roll film in contact with the surface thereof, a roll chamber, an SiOx film forming chamber and a monitor room disposed to the periphery of the drum, a sputter cathode disposed to the SiOx film forming chamber, and a moisture pump such as a cryogenic panel disposed in the film forming chamber for effectively discharging the moisture by which the partial pressure of the moisture in the film forming chamber is kept roll, in which the light absorption of the SiOx film after formation is monitored by an InSitu transmission light monitor, the value x for the SiOx is judged by the transmittance of light of the SiOx film to control the oxygen flow rate by an MFC such that the value x reaches an aimed value, thereby enabling to form an adhesion layer having sufficient adhesion and good permeability on the substrate.

Abstract: A film forming apparatus comprises a sputtering chamber, a cooling drum disposed at an central portion thereof for cooling a roll film in contact with the surface thereof, a roll chamber, an SiOx film forming chamber and a monitor room disposed to the periphery of the drum, a sputter cathode disposed to the SiOx film forming chamber, and a moisture pump such as a cryogenic panel disposed in the film forming chamber for effectively discharging the moisture by which the partial pressure of the moisture in the film forming chamber is kept roll, in which the light absorption of the SiOx film after formation is monitored by an InSitu transmission light monitor, the value x for the SiOx is judged by the transmittance of light of the SiOx film to control the oxygen flow rate by an MFC such that the value x reaches an aimed value, thereby enabling to form an adhesion layer having sufficient adhesion and good permeability on the substrate.

Abstract: When a thin film is formed on a flexible and filmy substrate by a vapor phase method, the substrate is prevented from warping to be caused by the internal stress remaining in the thin film. When the thin film is formed by the vapor phase method, the substrate is previously curved so that the stress acts in the direction canceling the internal stress remaining in the thin film to be formed prior to the filming. Accordingly, the stress of the curved substrate cancels out the stress remaining in the thin film formed on the substrate. The substrate having a thin film formed thereon is not warped, the stress in the interface between the thin film formed and the substrate is removed, and the thin film has no cracks to be caused by the stress.

Abstract: A method of applying a coating to a metallic article (10) comprises placing the metallic article within a hollow cathode (38) in a vacuum chamber (30), evacuating the vacuum chamber (30), applying a negative voltage to the hollow cathode (38) to produce a plasma and such that the material of the hollow cathode (38) is sputtered onto the metallic article (10) to produce a coating (22). A positive voltage (V1) is applied to the metallic article (10) to attract electrons from the plasma to heat the coating (22) and so inter-diffuse the elements of the metallic article (10) and the protective coating (22) and a negative voltage (V2) is applied to the metallic article (10) to attract ions from the plasma to bombard the coating (22) to minimize defects in the coating (22).

Abstract: A spectral selective absorbing surface on solar collector elements has a very high solar absorbing ability, in the range of 96% to 97% and a low thermal emittance, in the order of 10%, and can be produced with high capacity in industrial scale. A reactive gas in an amount of 1 to 50 cm 3/min kW, preferably 10 cm 3/min kW, distributed in the coating zone provides that the metal layer deposed onto the receiving material partly oxidizes during the deposition, whereby a layer is obtained that comprises a grain mixture of metallic material and metal oxide, whereby 40% to 80%, preferably about 50%, of metallic material is embedded into the metal oxide closest to the receiving material. The metallic material is successively decreased to about zero at the surface of the layer by increasing the addition of oxygen at the end of the coating zone.

Abstract: Power supply lines (41, 42) connect poles of an alternating current power source (43) to respective cathodes (58, 59) in compartments (32, 39), included among a plurality of adjacent compartments (32-39′), which together form a vacuum chamber (31) and which are connected to each other by a passageway (60). The two compartments (32, 39) with the cathodes (58, 59) are separated from each other by intermediate compartments (32′-38′), at least some of which are equipped with additional sputter cathodes (61-66).