Abstract: A method for manufacturing a coated substrate disk, comprises linearly bringing the substrate on a mounting, into an evacuated transport chamber and rotating the mounting in the chamber. The mounting is then extended into a coating position and coating of the substrate takes place. The mounting is then linearly retracted into the chamber again and rotated into a position for guiding the substrate out of the chamber. These steps are repeated for several substrates and then a pump opening into the chamber is closed by means of the mounting or the substrate. The chamber is then flooded and vacuum-tightly closed and the pump opening is released. The chamber is evacuated and the substrate moving and coating steps are repeated for more substrates.

Abstract: An apparatus for depositing thin films on a plurality of substrates has a vacuum chamber, a source of the material or materials to be deposited as the thin film, a source of energy for causing the material to be vaporized, and mechanical apparatus for imparting super-planetary and planetary motion to each substrate while the substrate is exposed to the vapors of the material. When a predetermined thickness of the film on any given substrate is reached the super-planetary motion is halted and only planetary motion and spinning are continued for the given substrate. During this process the thickness of the film being deposited is monitored accurately by an optical instrument having a linear axis of measurement which coincides with the center of the orbiting planetary motion of the substrate and is on the substrate itself.

Abstract: A planetary multi-substrate holder system for material deposition includes a substrate holder having circumferentially shaped openings in which disk-like substrates of a smaller diameter than the diameter of the openings are maintained. Upon rotation of the substrate holder, either in a vertical plane, or in a horizontal plane, the substrates self-rotate within each opening due to either gravity force (for vertically rotated substrate holder), or due to centrifugal force (for horizontally rotated substrate holder) applied to the substrates. The planetary multi-substrate system obviates the need for mechanical individual gears to rotate substrates for material deposition, and, as a sequence, yields an extended service life of the system, as well as agreeability with high temperatures used in material deposition process, and reduced cost of a final product.

Abstract: Apparatus (10) for treating a substrate, comprising: a vacuum chamber (12); a substrate carrier (14) adapted to carry a substrate (16) to be treated; a source material holder (22) for holding a source material (34) with which the substrate (16) is to be treated; and vaporising or sputtering means (20) for vaporising/sputtering the source material (34); wherein the source material holder (22) includes a positioning means (24) for relatively moving the source material (34) towards the substrate carrier (14).

Abstract: An exemplary method for using a mobile plating system is provided that includes locating the mobile plating system at a desired location for plating, positioning an external vacuum pump from an interior position of a mobile storage volume of the mobile plasma plating system to an exterior position, and coupling the external vacuum pump to a vacuum chamber within the mobile storage volume of the mobile plasma plating system using a flexible piping segment, rigid coupling with a dampening effect, or other arrangement operable to reduce and/or eliminate the mechanical vibrations within the vacuum chamber due to the operation of the external vacuum pump.

Abstract: A semiconductor processing reactor includes a rotating susceptor having at least one substrate holder for supporting a substrate during processing. A susceptor motor is coupled to the rotating susceptor and a substrate holder motor is coupled to the substrate holder. The susceptor motor controls the rotation of the rotating susceptor and the substrate holder motor controls the rotation of the substrate holder. This allows the rotating susceptor to be rotated independent of the rotation of the substrate holder. Further, the substrate holder lifts the substrate above the rotating susceptor allowing automated loading and unloading of the substrate.

Abstract: An exemplary mobile plating system is provided for performing a plating process using virtually any known or available deposition technology for coating or plating as substrate. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control circuitry to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: An apparatus for flow-line treatment of articles has two chambers. The first chamber is a vacuum working chamber to treat articles in an artificial atmosphere. First transport means transport articles through the first chamber and at least one lock at the end of the chamber. Second transport means transport articles though the second chamber. The lock has a movable body with at least two cavities, installed inside an airtight shell. The movable body moves between a first position, in which one cavity connects with the first chamber and the first transport means extend into the cavity, and a second position, in which the cavity connects with the second chamber and the second transport means extend into the cavity. The at least two cavities are adjacent and similar and are provided with openings. Each cavity holds one carrier with articles. The first and second transport means provide simultaneous and antiparallel movement.

Abstract: An exemplary mobile plating system and method are provided for performing a plating process using virtually any known or available deposition technology for coating or plating. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control module to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: A magnetron sputtering device and method for applying an interference layer to a substrate includes a magnetron sputtering chamber (A) which houses a substrate carrying assembly (B). The substrate carrying assembly comprises a primary rotation table (10), rotating about its central vertical axis (12) and at least one secondary table (36) mounted to an upper surface (14) of the primary rotation table. Substrates (42) are either horizontally or vertically loaded on to the secondary table. The substrates rotate about their symmetrical axis. First and second targets (50a, 50b) are housed by the chamber and are disposed on opposite sides of the chamber. The primary rotation table rotates the substrates between a position adjacent a first target where a layer having a low refractive index is applied to the substrates and a position adjacent a second target where a layer having a high refractive index is applied to the substrates.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin fill.

Abstract: A system and method for coating substrates. The coating process includes an improved capacity and uniformity through the addition of a second motion component in which the substrates move in a closed path. A major portion of the path is linear and the configuration of the coating machine is such that all substrates follow the same trajectory with respect to the machine during the coating process, resulting in a coating which is substantially the same for all substrates.

Abstract: A sputtering device is provided in which at least one target is sputtered by sputtering discharge to produce a film of target material on at least the first surface of a substrate. The sputtering device has a principal rotating mechanism that rotates the at least one target about an axis of revolution coaxial with the central axis of the substrate. The target is positioned offset from and circumferential to the central axis of the substrate coaxial with the axis of revolution. A magnet mechanism for magnetron discharge of the sputtering discharge forms a magnetic field asymmetrical to a central axis of the target and is rotated by an auxiliary rotating mechanism. The principal rotating mechanism integrates rotation of the targets with the magnet mechanism.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: A vacuum treatment system has a vacuum chamber in which there is at least one part which is driven in rotation and is connected by a gear train which comprises at least two rotating transmission bodies with a motor drive unit. The rotating transmission bodies produce a relative motion in a rolling manner. For this purpose, the bodies have axes of rotation that are not aligned. The rotating transmission bodies are magnetically drive-coupled to each other, and at least one of them is located in the vacuum chamber.

Abstract: A method and system for producing a film (preferably a thin film with highly uniform or highly accurate custom graded thickness) on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source operated with time-varying flux distribution. In preferred embodiments, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. A user selects a source flux modulation recipe for achieving a predetermined desired thickness profile of the deposited film. The method relies on precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.

Abstract: A sputtering chamber has a target that moves with an orbital motion relative to an ion beam. An X-Y assembly allows for target movement in both the horizontal and vertical directions. The X-Y assembly has a base plate, an intermediate plate, and a target mounting plate that attaches to the target. The plates are connected together by bearing blocks that slide along rails in the X and Y directions. A rotating shaft has gears that rotate a center shaft through the base and intermediate plates. The rotating center shaft has an arm on its end that attaches to the target mounting plate. The arm produces an orbital movement of the target. Rather than simply rotating the target around the center shaft, the center of the target orbits around the center of the center shaft. Ion-beam wear is spread across the target surface, extending target life and improving deposition uniformity.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A process and apparatus for coating small particles and fibers. The process involves agitation by vibrating or tumbling the particles or fibers to promote coating uniformly, removing adsorbed gases and static charges from the particles or fibers by an initial plasma cleaning, and coating the particles or fibers with one or more coatings, a first coating being an adhesion coating, and with subsequent coatings being deposited in-situ to prevent contamination at layer interfaces. The first coating is of an adhesion forming element (i.e. W, Zr, Re, Cr, Ti) of a 100-10,000 Å thickness and the second coating or final coating of a multiple (0.1-10 microns) being Cu or Ag, for example for brazing processes, or other desired materials that defines the new surface related properties of the particles. An essential feature of the coating process is the capability to deposit in-situ without interruption to prevent the formation of a contaminated interface that could adversely affect the coating adhesion.

Abstract: In a thin-film formation process and system, a target and a substrate are placed in a sputtering space and a film-forming space, respectively, the pressure in the film-forming space is maintained at a pressure lower than the pressure in the sputtering space and a pressure sufficient for sputtered particles to move in the film-forming space with their mean free path which is longer than the distance between the grid plate and the substrate, and the target is sputtered to form a thin film on the substrate.

Abstract: A cross flow system for metalizing compact discs, capable of being interposed in-line in the production of the compact discs after premastering, mastering, electro-forming, and molding includes a vacuum chamber having diametrically opposed vacuum locks and multiple metalization sources in the form of magnetrons, with a preferred cross flow including the introduction of a disc to be metalized through one lock and the exit of the metalized disc through the diametrically opposite lock. The double vacuum lock diametrically opposed cross flow system eliminates the problems of throughput limitations, high rate deposition, substrate pitting, and software complexity due to indexing which makes prior systems both costly and inefficient. The system also permits processing of more than one substrate or compact disc title such that multiple titled compact discs can be processed simultaneously.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface facing the thin-film particle source. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a lateral moving means for laterally moving and controlling a duration of exposure time across a radial direction for each of the substrates for controlling thickness uniformity of the thin-film deposited on each of the substrates.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin film.

Abstract: A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction. The magnetic film forming system comprises a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable with the substrate held, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

Abstract: A device for the sputter application of hard material coatings, including an exhaustible vacuum chamber, at least one sputtering source for depositing a coating material, a plurality of fixtures for supporting a plurality parts to be coated, the fixtures being mounted on planet gears which are movable via a planetary drive, a centrally disposed heating device, a reactive gas inlet, and a plurality of movable screens for covering the at least one sputtering source, the screens being arranged to surround the fixtures, wherein the heating device, the screens, and the planetary drive comprise an assembly which is removable from the vacuum chamber.

Abstract: A method and system for producing thin film alloy by a sputtering deposition process comprising using a circle-shaped aperture interposed between the target and substrate of a sputtering deposition system and establishing a rotating/oscillating relationship between the substrate and the aperture.

Abstract: A method of fabricating a semiconductor device comprises the steps of: (a) forming a mask layer over an upper surface of a semiconductor substrate such that the mask layer has an aperture penetrating the mask layer and having an inclined lateral wall so as to make the aperture inverted taper shaped; (b) forming a first dielectric layer at a first area over the upper surface of the semiconductor substrate within the aperture by sputtering at a first sputtering incidence direction; and (c) forming a first electrode layer at a second area over the upper surface of the semiconductor substrate within the aperture by sputtering at a second sputtering incidence direction which is different from the first sputtering incidence direction.

Abstract: An ion beam sputtering system having a chamber, an ion beam source, multiple targets, a shutter, and a substrate stage for securely holding a wafer substrate during the ion beam sputtered deposition process in the chamber. The substrate stage is made to tilt about its vertical axis such that the flux from the targets hit the wafer substrate at a non-normal angle resulting in improved physical, electrical and magnetic properties as well as the thickness uniformity of the thin films deposited on the substrate in the ion beam sputtering system.

Abstract: A robotic arm assembly in a transport module is expansible to have an effector at its end receive a substrate in a cassette module and is then contracted and rotated with the effector to have the effector face a process module. Planets on a turntable in the process module are rotatable on first parallel axes. The turntable is rotatable on a second axis parallel to the first axes to move successive planets to a position facing the effector. At this position, an alignment assembly is aligned with, but axially displaced from, one of the planets. This assembly is moved axially into coupled relationship with such planet and then rotated to a position aligning the substrate on the effector axially with such planet when the arm assembly is expanded. A lifter assembly aligned with, and initially displaced from, such planet is moved axially to lift the substrate from the effector. The arm assembly is then contracted, rotated with the effector and expanded to receive the next cassette module substrate.

Abstract: Disclosed is a vacuum film forming/processing apparatus and method which is hardly influenced by dusts and contamination on a substrate and moreover has a reduced exhaust volume. A substrate chamber for housing and holding a substrate and target chambers for housing and holding a target and an etching chamber are moved relatively. Any one of the target chambers, etching chamber and the substrate chamber are selectively coupled and communicated with each other, thereby creating a film forming chamber. In the film forming chamber, a film forming process to the substrate is performed and a multilayered film is formed. A conveying chamber which is conventionally provided is consequently made unnecessary. A problem of dusts and contamination occurring when the substrate passes through the conveying chamber is eliminated, so that the film quality and its stability are improved.

Abstract: A magnetron for use in a DC magnetron sputtering reactor that can rotate at a smaller diameter during a deposition phase and at a larger diameter during a cleaning phase, whereby sputter material redeposited outside of the deposition sputtering track is removed during the cleaning phase. An embodiment for a two-diameter magnetron includes a swing arm fixed on one end to the magnetron rotation motor shaft and on the other end to a pivot shaft, pivotably coupled to the magnetron. When the magnetron is rotated in different directions, hydrodynamic forces between the magnetron and the chilling water bath cause magnetron to pivot about the pivot shaft. Two mechanical detents fix the limits of the pivoting and hence establish the two diameters of rotation.

Abstract: An ion beam sputtering target assembly has six sputter targets arranged in pairs on three paddles and disposed upon the circumference of a circular holder. The circular holder can be rotated about its axis in such a way as to bring any one of the target pairs to be exposed to the sputtering ion beam to deposit a film on substrate. The paddle is rotated to bring a desired target in the pair into position for sputtering. An alternative embodiment is provided with an enlarged region which allows one of the target paddles to be rotated about its axis while that target paddle is in an inactive, non-sputtering rotary position.

Abstract: A device for coating a disk-like substrate (3,3′, . . . ) with the aid of cathodic sputtering, having an essentially cylindrical transport chamber (7) and with a vacuum pump (8) connected to the transport chamber (7) and with an opening (9) that can be closed off by a plate (16) for inserting and removing the substrates (3,3′. . .

Abstract: An elongate emitter is used as a cathode to coat material onto a cylindrical workpiece by magnetron sputterinig. Where the inside surface of the workpiece is coated, the workpiece itself is used as the vacuum sputtering chamber. The overlap between the plasma field and the magnetic field creates a coating zone which is moved along the length of the workpiece to evenly coat the workpicce.

Abstract: A robotic arm assembly in a transport module is expansible to have an effector at its end receive a substrate in a cassette module and is then contracted and rotated with the effector to have the effector face a process module. Planets on a turntable in the process module are rotatable on first parallel axes. The turntable is rotatable on a second axis parallel to the first axes to move successive planets to a position facing the effector. At this position, an alignment assembly is aligned with, but axially displaced from, one of the planets. This assembly is moved axially into coupled relationship with such planet and then rotated to a position aligning the substrate on the effector axially with such planet when the arm assembly is expanded. A lifter assembly aligned with, and initially displaced from, such planet is moved axially to lift the substrate from the effector. The arm assembly is then contracted, rotated with the effector and expanded to receive the next cassette module substrate.