Abstract: A method of ultra-fast boriding of a metal surface. The method includes the step of providing a metal component, providing a molten electrolyte having boron components therein, providing an electrochemical boriding system including an induction furnace, operating the induction furnace to establish a high temperature for the molten electrolyte, and boriding the metal surface to achieve a boride layer on the metal surface.

Abstract: Apparatus for the electrolytic treatment of the product L using a treatment agent is used to make the treatment of a plate-shaped product more uniform. This apparatus includes devices 40, 42 for retaining the product L in the apparatus, one or more flow devices 10, which each include at least one nozzle 15 and are disposed situated opposite the product L, one or more counter electrodes 30, which are inert relative to the treatment agent and are disposed parallel to at least one treatment surface, eccentric motor means for generating a relative movement 44 between the product L, on the side, and the flow devices 10 and/or the counter electrodes 30, on the other side, in at least one direction parallel to a treatment surface. The product L can be immersed in the treatment agent during treatment.

Abstract: To provide a barrel electroplating method which is less prone to bare spots and adhesion failure such as blisters and peeling, and which makes it possible to obtain uniform plated coatings free from burnt deposits and poor brightness, irrespective of the amount of workpieces. The present invention provides a method for performing barrel electroplating by use of an aluminum or aluminum alloy plating bath, the method comprising rotating, swinging, or vibrating an anode (6) placed inside a barrel (4) receiving workpieces, and simultaneously rotating, swinging, or vibrating the barrel, with a voltage being applied between the anode and a cathode provided on an inner wall surface of the barrel.

Abstract: An electric contact in the outer edge thereof, is used for electroplating substrates, e.g. as a wafer in a cup plater. In order to obtain an even electroplating result, at least two electrolytic partial cells are formed which are supplied with current by respective electroplating current sources (9?) and (9?) that can be individually adjusted. The partial cathode (12?) and the associated partial anode (7?) are supplied in the region of the diametrically remote partial cathode (12?). Conversely, the partial cathode (12?) is supplied via the base layer of the partial cathode (12?). The required levelling of the layer thickness distribution is inter alia carried out by alternate different adjustments of the quantity of the electroplating current of the two partial cells and by the electrodes (7,12) that rotate relative to each other.

Abstract: A method of fluid processing a semiconductor workpiece, including disposing a workpiece holder with a housing capable of containing a fluid, the workpiece holder retaining the workpiece, providing an agitation system connected to the housing and comprising a member disposed within the housing adjacent the workpiece holder, and agitating the fluid by moving the member substantially parallel to a surface of the workpiece with a non-uniform oscillatory motion, the non-uniform oscillatory motion being a series of substantially continuous geometrically asymmetric oscillations wherein each consecutive oscillation of the series is geometrically asymmetric having at least two substantially continuous opposing strokes wherein reversal positions of each substantially continuous stroke of the substantially continuous asymmetric oscillation are disposed asymmetrically with respect to a center point of each immediately preceding substantially continuous stroke of the oscillation.

Abstract: A method and apparatus for establishing more uniform deposition across one or more faces of a workpiece in an electroplating process. The apparatus employs eductors in conjunction with a flow dampener member and other measures to provide a more uniform current distribution and a more uniform metal deposit distribution as reflected in a coefficient of variability that is lower than conventional processes.

Abstract: The present invention provides a method for forming a conductive film with uniform properties on a wafer surface that has features or cavities. During the process, the workpiece is rotated and laterally moved while an electrodeposition solution is delivered onto the wafer surface at a predetermined flow rate, and a potential difference is applied between the workpiece surface and the electrode. The workpiece is rotated about an axis at predetermined revolutions per minute so that an edge region of the workpiece has a first predetermined linear velocity due to the rotation. The workpiece has a second predetermined linear velocity due to the lateral motion. The second predetermined velocity may be larger than the first predetermined velocity. Further, the wafer may not be rotated.

Abstract: An anodic oxidation apparatus and an anodic oxidation method are provided that enable uniform photoirradiation of a treatment part of a target substrate, thereby realizing enhancement in uniformity of anodic oxidation in the surface of the target substrate. The anodic oxidation apparatus includes: a lamp that emits light; a target substrate holder provided at a position reached by the emitted light and capable of holding the target substrate; a cathode electrode that is provided on the way of the emitted light to reach the target substrate and that has an opening portion to allow light to pass therethrough and has a conductor section not transmitting light; and a vibrating mechanism to periodically vibrate a spatial position of one of the cathode electrode, the lamp, and the target substrate holder.

Abstract: The present invention provides a method for forming a conductive film with uniform properties on a wafer surface that has features or cavities. During the process, the workpiece is rotated and laterally moved while an electrodeposition solution is delivered onto the wafer surface at a predetermined flow rate, and a potential difference is applied between the workpiece surface and the electrode. The workpiece is rotated about an axis at predetermined revolutions per minute so that an edge region of the workpiece has a first predetermined linear velocity due to the rotation. The workpiece has a second predetermined linear velocity due to the lateral motion. The second predetermined velocity may be larger than the first predetermined velocity. Further, the wafer may not be rotated.

Abstract: A wafer electroplating apparatus and method, comprising a wafer turning assembly, a vertical movement assembly, a wafer tilting assembly, and a frame. The wafer turning assembly has a turning shaft and a clasp for holding a wafer. The wafer tilting assembly has a tilting table being driven by a driving system, e.g. a cylinder, carrying an electroplating unit and wafer turning assembly. Thus the clasp holding a wafer and the electroplating unit are simultaneously inclined at preset angle against the horizontal plane, allowing for a large inclination angle. Therefore, gas bubbles generated during electroplating readily escape, and quality of electroplating is improved.

Abstract: Electroplating methods and systems employing ultrasonic energy to enhance electroplating processes. The electroplating methods involve sweeping a plating surface with ultrasonic energy having an area of maximum ultrasonic energy density while simultaneously performing electroplating. The systems include movement apparatus providing relative movement between an ultrasonic energy source and a cathode while the ultrasonic energy source and the cathode are located within a plating tank.

Abstract: A method and associated apparatus of electroplating an object and filling small features. The method comprises immersing the plating surface into an electrolyte solution and mechanically enhancing the concentration of metal ions in the electrolyte solution in the features. In one embodiment, the mechanical enhancement comprises mechanically vibrating the plating surface. In another embodiment, the mechanical enhancement comprises mechanically vibrating the electrolyte solution. In a further embodiment, the mechanical enhancement comprises increasing the pressure applied to the electrolyte solution.

Abstract: Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.

Abstract: A method and apparatus for performing high speed chemical treatment of v type cylinder blocks. First the cylinder bores of one bank are treated. Then those of the other bank are treated. This permits a simple but compact treating plant.

Abstract: A method for forming relatively thick composite coatings on a region of the surface of a metallic member includes exposing the surface region to an electrolyte fluid, either by immersion or by spraying the electrolyte against the surface region. A preferred electrolyte fluid is an aqueous solution including an electrolytic agent, a passivating agent and a modifying agent in the form of a solute or a powder suspended in the solution. A voltage signal is applied to induce a current flow of constant magnitude between the metallic member and the electrolyte fluid so that the metallic member interacts with the passivating agent to form a passive oxide layer on the surface region. The voltage signal increases in magnitude until local voltage reaches a breakthrough level across separate highly localized discharge channels along the surface region of the metallic member.

Abstract: Small, closely spaced deposits of solder materials may be formed with high volumetric accuracy and uniformity of shape by depositing a layer of conductive material over surfaces of a dielectric layer having apertures or recesses (e.g. blind apertures) and conductors and/or pads exposed by those apertures or recesses, masking regions of the conductive material with a further patterned dielectric layer, electroplating solder materials onto regions of the conductive material exposed by the mask, removing the mask and portions of the conductive material by selective etching and reflowing solder away from at least a portion of the surfaces of the apertured dielectric layer. Uniformity of electroplating within blind apertures is enhanced by a combination of fluid jet sparging and cathode agitation. Excess conductor material in the resulting solder deposit can be avoided by replacing conductor material with a constituent component of a solder material in an immersion bath prior to electroplating.

Abstract: A plating system (10) for plating a substrate such as a semiconductor wafer (116) in an electrolytic tank (12). A fixture wheel (14) is mounted within the electrolytic tank to rotate about a first axis (140). The fixture wheel receives the semiconductor wafer and supplies electrical current to the perimeter edge of the wafer. A fixture wheel drive motor (90) drives rotation of the fixture wheel about the first axis. An anode assembly (18) is mounted in the tank spaced from and facing towards the fixture wheel and received semiconductor wafer. The anode assembly carries first and second anodes (72) which are supplied with electrical current. A second motor (142) causes reciprocation of the anode assembly transversely in front of the rotating fixture wheel for improved uniformity in plating thickness and composition.

Abstract: Small, closely spaced deposits of solder materials may be formed with high volumetric accuracy and uniformity of shape by depositing a layer of conductive material over surfaces of a dielectric layer having apertures or recesses (e.g. blind apertures) and conductors and/or pads exposed by those apertures or recesses, masking regions of the conductive material with a further patterned dielectric layer, electroplating solder materials onto regions of the conductive material exposed by the mask, removing the mask and portions of the conductive material by selective etching and reflowing solder away from at least a portion of the surfaces of the apertured dielectric layer. Uniformity of electroplating within blind apertures is enhanced by a combination of fluid jet sparging and cathode agitation. Excess conductor material in the resulting solder deposit can be avoided by replacing conductor material with a constituent component of a solder material in an immersion bath prior to electroplating.

Abstract: A process for electrolytic production of fine-grained, single-phase, metallic alloy powders, especially powders of intermetallic compounds as well as noble metal alloy powders, is described in which powdery metallic precipitates are galvanically produced on the cathode from an electrolytic precipitating bath known in the art, which contains in solution the metals to be precipitated, under electrolysis conditions causing a powder precipitation known in the art. For the production of alloy powders with defined properties, it is determined, first in preliminary tests by gradual increase of the cathode potential with otherwise constant process parameters, the minimum cathode potential at which single-phase alloy powders result and then the powder precipitation is potentiostatically performed in a cathode potential at or above the minimum for the single-phase alloy precipitation.