Abstract: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

Abstract: In one embodiment of the invention, an electroplating aqueous solution is disclosed. The electroplating aqueous solution includes at least two acids, copper, at least one accelerator agent, and at least two suppressor agents. The at least one accelerator agent provides an acceleration strength of at least about 2.0 and the at least two suppressor agents, collectively, provide a suppression strength of at least about 5.0. Methods of making and using such an electroplating aqueous solution are also disclosed.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of a compound including a heteroatom chosen from nitrogen, sulfur and a mixture of nitrogen and sulfur, with a polyepoxide compound containing an ether linkage that deposit copper on the surface of an electronic device and in apertures on such substrate are provided. Such plating baths deposit a copper layer on the substrate surface that is substantially planar across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: An electroplating solution contains a wetting agent in addition to a suppressor and an accelerator. In some embodiments, the solution has a cloud point temperature greater than 35° C. to avoid precipitation of wetting agent or other solute out of the plating solution. In some embodiments, the wetting agent decreases the air-liquid surface tension of the electroplating solution to 60 dyne/cm2 or less to increase the wetting ability of the solution with a substrate surface. In some embodiments of a method for plating metal onto substrate surface, the electroplating solution has a measured contact angle with the substrate surface less than 60 degrees.

Abstract: An electrolytic copper plating bath used for via-filling plating of blind via-holes formed on a substrate, containing a water-soluble copper salt, sulfuric acid, chloride ions, and a leveler as an additive, wherein the leveler is either one or both of a quaternary polyvinylimidazolium compound represented by the following formula (1) and a copolymer, represented by the following formula (2), of vinylpyrrolidone and a quaternary vinylimidazolium compound: where R1 and R2 are each an alkyl group, m is an integer of not less than 2, and p and q are each an integer of not less than 1, and a copper electroplating method for via-filling plating of blind via-holes formed on a substrate by use of the electrolytic copper plating bath.

Abstract: Compounds that function to provide level or uniform metal deposits are provided. These compounds are particularly useful in providing level copper deposits. Copper plating baths and methods of copper plating using these compounds are also provided. These baths and methods are useful for providing a planarized layer of copper on a substrate having small apertures. The compositions and methods provide complete fill of small apertures with reduced void formation.

Abstract: A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of Cu electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

Abstract: Inorganic or organic fine particles which are insoluble to water are added to a metal plating bath, by dispersing the fine particles in a watery medium by the help of an azo-surfactant having an aromatic azo compound residue. Electrolysis is then carried out. According to the present invention, the content of the fine particles present in a composite plating film composed of the fine particles and a metal can be increased.

Abstract: A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

Abstract: Disclosed are compositions and methods for providing a planarized metal layer on a substrate having small apertures. The compositions and methods of the present invention provide complete fill of small apertures with reduced void formation.

Abstract: A copper-plating electrolyte includes an aqueous copper salt solution, a water-soluble &bgr;-naphtholethoxylate compound having the formula wherein n is an integer from 10 to 24, one selected from the group consisting of a disulfide having the formula XO3S(CH2)3SS(CH2)3SOX3 and a water-soluble mercaptopropanesulfonic acid or salt thereof having the formula HS(CH2)3SO3X, where X is sodium, potassium, or hydrogen, a water-soluble polyethylene glycol having a molecular weight ranging from about 4,600 to about 10,000, and a water-soluble polyvinylpyrrolidone having a molecular weight ranging from about 10,000 to about 1,300,000.

Abstract: The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate.

Abstract: A copper plating bath comprising a reaction condensate of an amine compound and glycidyl ether and/or a quaternary ammonium derivative of this reaction, condensate, and a plating method using this copper plating bath are disclosed. A copper plating bath capable of providing highly reliable copper plating on a substrate such as a silicone wafer semiconductor substrate or printed board having minute circuit patterns and small holes such as blind via-holes, through-holes, and the like, and a method of copper plating using the copper plating bath can be provided.

Abstract: In filling fine via holes or trenches of the wiring (LSI) pattern formed on a semiconductor wafer, a copper electroplating is carried out by using a copper electroplating solution. containing an azole or a silane coupling agent, or a copper electroplating is carried out after the immersion into a pretreatment solution containing an azole or a silane coupling agent. As illustratively shown above, the addition of a component having the action to inhibit the dissolution of copper to an electroplating solution or the pretreatment by a solution containing a component having the action to inhibit the dissolution of copper can inhibit the dissolution of a copper seed layer covering poorly, and thus can prevent the occurrence of defects such as voids and seams.

Abstract: A method of producing copper foil, and more particularly, in an electrochemical cell containing organic substituents, is provided herein. The metal may be deposited on an electrode that comprises an electrode base having at least one undercoating layer of an active coating and at least one topcoating layer of no significant activity. The copper electrodeposition cell can operate without an adverse affect on electrode potential.

Abstract: A plating method comprising using a plating solution containing an additive satisfying the following conditions: 0.005×h2/w<D/&kgr;<0.5×h2/w, and 0.01≦&THgr;≦0.

Abstract: Electrolytic copper plating methods are provided, wherein copper is electrolytically deposited on a substrate, and the electrolytic copper plating solution supplied to said electrolytic copper plating is subjected to dummy electrolysis using an insoluble anode. The method described above can maintain and restore the electrolytic copper plating solution so as to maintain satisfactory appearance of plated copper, fineness of deposited copper film, and via-filling.

Abstract: The present invention relates to a copper electroplating bath composition and method of using it for microelectronic device fabrication. In particular, the present invention relates to copper electroplating in the fabrication of interconnect structures in semiconductor devices. By use of the inventive copper electroplating bath composition, the incidence of voids in the interconnect structures is reduced.

Abstract: An object of the present invention is to improve the reliability and the yield of production of semiconductor integrated circuit devices by filling copper in the inside of features having a high aspect ratio for forming multi-layer interconnections composed of a plurality of interconnection layers which are connected to one another and to a copper electroplating bath suitable therefor. In the present invention, when the features are filled with copper, the use of a copper electroplating bath with an addition of cyanine dyes, for example, indolium compounds allows the copper plating to proceed preferentially from the bottoms of the features.

Abstract: Treated copper foil produced by electrodepositing on a matte surface of a base copper foil a “corrective” copper layer having a surface roughness different from the surface roughness of the matte surface of the base foil and which has a peak count greater than the peak count of the matte surface of the base foil. In the electrodeposition there are used a unique electrolyte composition and plating conditions effective to control the micro-throwing process of the plating process so that the surface roughness of the corrective is substantially constant from one batch of base foil to another.

Abstract: There is provided a copper-plating liquid free from an alkali metal and a cyanide which, when used in plating of a substrate having an outer seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and can embed copper completely into the depth of the fine recesses.

Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.

Abstract: The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate.

Abstract: The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

Abstract: A process and assembly for stabilizing organic additives in an electrolytic solution while electroplating copper. The process includes forming a protective film on a first surface of an anode and minimizing contact between the electrolytic solution and a second surface of the anode which is further from the cathode than the first surface. An anode housing is used to minimize contact between the electrolytic solution and the second surface of the anode. The housing includes two side walls and a bottom wall, each having a groove, and a sealing back plate. The anode is fitted in the grooves such that the first surface of the anode is in contact with the electrolytic solution and the second surface of the anode abuts against the sealing back plate. The anode housing may be used in an electroplating system including the anode housing, a plating tank containing the electrolytic solution, a cathode immersed in the electrolytic solution, and an anode, which preferably is in the shape of a slab.

Abstract: An aqueous acid bath for galvanic precipitation of copper is disclosed. The copper plating composition comprises at least one polymer phenazonium compound and .beta.-naphtholalkoxylate. A method for using such a bath for deposition of copper coatings is also disclosed. The resultant copper coatings are smooth and bright with substantially no fine roughness or pitting.

Abstract: A substantially cyanide-free plating solution for depositing copper from the monovalent ionic state, which includes monovalent copper ion, a reducing agent capable of reducing divalent copper ions to monovalent copper ions, an alkali material in an amount sufficient to maintain the pH of the solution in the range of about 7 to about 10, and a complexing agent of an imide, such as succinimide, 3-methyl-3-ethyl succinimide, 3-methyl succinimide, 3-ethyl succinimide, 3,3,4,4-tetramethyl succinimide, or 3,3,4-trimethyl succinimide, or a hydantoin, such as dimethyl hydantoin. The substantially cyanide-free plating solutions may also include at least one of a conductivity salt, an additive to promote brightness, or an alloying metal. The reducing agent may be an alkali sulfite, alkali bisulfite, hydroxylamine, or hydrazine. The copper is typically provided in the form of CuCl, CuCl.sub.2, CuSO.sub.4, or Cu.sub.

Abstract: The improved aqueous, non-cyanide zinc electroplating solution prevents iron contamination during electroplating. The solution, in addition to water, has a copper salt, preferably copper sulfate, in a concentration of about 0.01-6% by weight of the solution, and the water-soluble reaction product of epichlorohydrin with Compound A, preferably in a concentration of about 16.67-26.67 gm./liter of solution. Compound A is a nitrogen-containing compound selected from aliphatic amine, unsubstituted heterocyclic nitrogen compound having at least two reactive nitrogen sites, and substituted heterocyclic nitrogen compound having at least two reactive nitrogen sites and 1-2 substitution groups selected from methyl, ethyl and amino groups. The reaction product, providing it includes the substituted or unsubstituted heterocyclic nitrogen compound, before use in the solution may be further reacted with a reagent of at least one of ammonia, aliphatic amine, polyamine or polyimine.

Abstract: There are disclosed a process for preparing an ambient temperature molten salt, which comprises treating an ambient temperature molten salt consisting essentially of 20 to 50 mole % of an aluminum halide and 80 to 50 mole % of an onium halide, containing oxygen-containing impurities originating from water with thionyl chloride anda process for preparing an ambient temperature molten salt for effecting aluminum electroplating, which comprises treating mixed ambient temperature molten salts consisting essentially of 30 to 50 mole % of an aluminum halide and 70 to 50 mole % of an onium halide, containing oxygen-containing impurities originating from water with thionyl chloride, and then adding aluminum halide to the molten salt to prepare an ambient temperature molten salt composition consisting essentially of 50 to 80 mole % of an aluminum halide and 50 to 20 mole % of an onium halide.

Abstract: An aqueous acid bath for the galvanic deposition of bright, ductile and smooth copper coats which is suitable for decorative purposes as well as for strengthening the conductors of printed circuits. The bath is characterized by a content of polyalkylene glycol ether. When combined with thio compounds containing water-soluble groups, these additions produce an electrolyte with excellent stability. Polymeric phenazonium compounds, polymeric nitrogen compounds and/or thio compounds containing nitrogen may also be successfully combined, in addition, depending on the desired properties.

Abstract: This invention relates to electrodeposited copper foil having an elongation measured at 180.degree. C. in excess of about 5.5%, an ultimate tensile strength measured at 23.degree. C. in excess of about 60,000 psi, and a matte-side R.sub.tm in the range of about 4.5 to about 18 .mu.m. This invention also relates to a process for making electrodeposited copper foil which comprises: preparing a copper deposition bath comprising water, copper ions and sulfate ions, said bath containing less than about 20 ppm chloride ions; and applying electric current to said bath to electrodeposit copper from said bath using a current density in the range of about 200 to about 3000 amps per square foot.

Abstract: The invention relates to a process for depositing copper on a gravure roll comprising the steps of: immersing a gravure roll in an electroplating bath comprising A) copper, B) sulfuric acid, C) at least one alkoxythio compound, D) at least one sulfonated, sulfurized hydrocarbyl compound and E) at least one grain refining thio compound, and passing electric current through the bath to deposit copper on the gravure roll.

Abstract: Disclosed is a method for electroplating a metal sheet adapted for being used in electronic packaging material, such as printed circuit boards. Bismaleimide and its derivative are added into the plated solution so as to form insoluble particles of bismaleimide and its derivatives on the surface of the metal sheet. The resulting metal sheet is particularly adapted for being bonded to a polyimide film for the preparation of, for example, a printed circuit board. Also disclosed is a method of bonding the metal sheet of the present invention to a polyimide substrate. Precursor of polyimide are coated on the surface of the plate metal sheet and then thermal imidizing of the precursors takes place. No additional adhesives are needed for this bonding.

Abstract: For acid copper plating baths containing a brightener used to produce smooth copper coatings of high brilliancy, it has been found that the "break-in" period normally needed after a brightener is added to the plating bath, has been virtually eliminated by use of the brightener of this invention. This brightener consists essentially of a peroxide oxidation product of a dialkylamino-thioxomethyl-thioalkanesulfonic acid wherein each alkyl and alkane group individually contains 1 to 6 carbon atoms and wherein the peroxide oxidation of the dialkylamino-thioxomethyl-thioalkane-sulfonic acid is carried out in an acid, aqueous medium having a pH of not more than about 1. In an added embodiment of this invention the acid copper plating bath also contains hydrolysis products of the peroxide oxidation product of a dialkylamino-thioxomethyl-thioalkanesulfonic acid.