Abstract: A new method of creating thin free-standing pin hole-free hydrogen-selective palladium-bearing membranes that comprises thinning cold-rolled membranes by chemical etching or electrochemically electrolyzing of at least one membrane surface, and novel membranes produced thereby and including membranes with selected portions only thereof so thinned.
Type:
Grant
Filed:
February 18, 1999
Date of Patent:
August 15, 2000
Assignee:
Walter Juda Associates, Inc.
Inventors:
Walter Juda, Charles W. Krueger, R. Todd Bombard
Abstract: A device for electrochemically deplating metal from side edges and a backside of a semiconductor wafer or substrate. The device includes a shaped cathode having a shape substantially corresponding to a shape of at least a portion of the semiconductor wafer, such that the shaped cathode at least partially covers the backside and at least partially covers the side edges of the semiconductor wafer. The position of at least one of the semiconductor wafer and the shaped cathode is altered by position altering apparatus during the electrochemical deplating.
Type:
Grant
Filed:
June 4, 1998
Date of Patent:
May 2, 2000
Assignee:
International Business Machines Corporation
Abstract: A method of making a needle electrode is such that a neck portion is formed in a thin wire made of a tungsten single crystal and the thin wire is cut at the neck portion by feeding an electric current in electrolyte.
Abstract: A method and apparatus is described for producing a large number of identical parts from a bar of material by electrochemical machining without the intervention of an operator. The apparatus comprises a spindle for supporting the bar and periodically feeding it in the direction of its axis, and an electrochemical machining assembly comprising cathodes for shaping the leading end portion of the bar to form the part. After the part has been shaped, it is electrochemically cut from the bar, and the bar is advanced longitudinally by the spindle in order to proceed with the machining of the next part.
Type:
Grant
Filed:
December 31, 1996
Date of Patent:
May 4, 1999
Assignee:
Societe Nationale d'Etude et de Construction de Monteurs d'Aviation "SNECMA"
Inventors:
Jacques Marie Pierre Stenneler, Pierre Marc Serge Lechervy
Abstract: The present invention teaches a method of producing a textured surface upon an arbitrarily configured titanium or titanium alloy object for the purpose of improving bonding between the object and other materials such as polymer matrix composites and/or human bone for the direct in-growth of orthopaedic implants. The titanium or titanium alloy object is placed in an electrolytic cell having an ultrasonically agitated solution of sodium chloride therein whereby a pattern of uniform "pock mark" like pores or cavities are produced upon the object's surface. The process is very cost effective compared to other methods of producing rough surfaces on titanium and titanium, alloy components. The surface textures produced by the present invention are etched directly into the parent metal at discrete sites separated by areas unaffected by the etching process. Bonding materials to such surface textures on titanium or titanium alloy can thus support a shear load even if adhesion of the bonding material is poor.
Type:
Grant
Filed:
June 23, 1997
Date of Patent:
December 29, 1998
Assignee:
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
Abstract: A silicon on-insulator device wafer having a very thin monocrystalline film with uniform thickness. It is fabricated by vias technique in which a monocrystalline silicon film on an insulator is etched with a base silicon etching solution in an etch apparatus by applying a vias in such a way that the solution may serve as an anode and the substrate of SOI structure as a cathode. The presence of the insulator generates vacancies in a lower region of the monocrystalline silicon film and electrons in the substrate, so that the lower region charged with the vacancies is not removed by the base silicon etching solution, thereby leaving a highly uniform, thin monocrystalline silicon film.
Type:
Grant
Filed:
October 3, 1996
Date of Patent:
September 22, 1998
Assignee:
Korea Advanced Institute of Science and Technology
Abstract: A plate-, foil- or web-shaped workpiece of aluminum or an alloy thereof is subjected, in an electrolyte bath, to an alternating current at a frequency of 0.1 to 25 Hz. During the AC treatment, an anodic potential is imposed on the workpiece, in the range of 0 to 5 Volts. The total charge input is 10 to 60 kC/m.sup.2. Prior to the electrochemical graining, the workpiece is mechanically grained. After the graining steps, an etching treatment as well as an anodical oxidation and, thereafter, a hydrophilization are performed.
Abstract: A method of manufacturing an extrusion die for extruding a honeycomb structural body is disclosed. The extrusion die has a plurality of forming channels which have a shape in a traverse cross section corresponding to that of the honeycomb structural body and have a predetermined depth from a front side of the extrusion die toward a back side, and a plurality of opening holes for feeding raw materials which have a cylindrical shape extending independently from the back side toward the front side and are arranged at a cross portion and/or a straight portion of the forming channels in such a manner that each opening hole is opened and connected to the cross portion and/or straight portion of the forming channels.
Type:
Grant
Filed:
August 8, 1996
Date of Patent:
March 17, 1998
Assignees:
NGK Insulators, Ltd., Institute of Technology Precision Electrical Discharge Works
Abstract: A carbide substrate including a binder prepared to receive a cutting material such as a diamond coating thereon. The substrate is immersed in an electrolyte solution with the substrate acting as the anode thereby providing for an electro-polished substrate surface. The electro-polished substrate surface is then etched to substantially remove the binder phase of the carbide substrate, the etching being to a depth of up to about 15 microns. The resulting surface is susceptible for receiving a coating of the diamond cutting material.
Type:
Grant
Filed:
August 11, 1995
Date of Patent:
July 22, 1997
Assignee:
Credo Tool Company
Inventors:
Carl Shumaker, Zane D. Lockhart, Jr., Oscar H. Miller
Abstract: Disclosed herein are methods of measuring, adjusting and uniformalizing a sectional area ratio of a metal-covered electric wire, a method of cleaning an electric wire, a method of manufacturing a metal-covered electric wire, an apparatus for measuring a sectional area ratio of a metal-covered electric wire, and an apparatus for electropolishing a metal-covered electric wire.Electric resistance values of first and second materials are previously stored respectively so that a sectional area ratio of a metal-covered electric wire is calculated on the basis of the as-stored values and an actually measured electric resistance value of the metal-covered electric wire. Measurement and uniformalization of a sectional area ratio of a metal-covered electric wire and cleaning of an electric wire are carried out by dissolving surface layer parts of the electric wires by electropolishing.
Abstract: A process is set forth for electrochemically machining holes in a workpiece, such as a die, in such a manner so as to virtually eliminate surface finish patterns normally introduced by the electrochemical machining process, by randomly forming sequences of patterns of holes extending in rows across the workpiece along its extent, and then rotating the workpiece 180.degree. and randomly forming additional sequences of patterns of holes across the workpiece adjacent those sequences of holes which were formed prior to rotating the workpiece 180.degree..
Abstract: A method of etching an aluminum foil for electrolytic capacitors, comprising the steps of electrolytically etching an aluminum foil for electrolytic capacitors that has a high cubic texture in an electrolyte containing a chloride to form pits, and enlarging the pits formed in the above step by etching, in which step of forming pits the current density is increased from 0 to a maximum value quickly and then is decreased gradually.