Abstract: The present invention pertains to apparatus and methods for planarization of metal surfaces having both recessed and raised features, over a large range of feature sizes. The invention accomplishes this by increasing the fluid agitation in raised regions with respect to recessed regions. That is, the agitation of the electropolishing bath fluid is agitated or exchanged as a function of elevation on the metal film profile. The higher the elevation, the greater the movement or exchange rate of bath fluid. In preferred methods of the invention, this agitation is achieved through the use of a microporous electropolishing pad that moves over (either near or in contact with) the surface of the wafer during the electropolishing process. Thus, methods of the invention are electropolishing methods, which in some cases include mechanical polishing elements.
Type:
Application
Filed:
September 28, 2001
Publication date:
June 20, 2002
Inventors:
Steven T. Mayer, Robert J. Contolini, Eliot K. Broadbent, John S. Drewery
Abstract: An epitaxial layer of silicon is grown on a layer of partially-oxidized porous silicon, then covered by a capping layer which provides structural support and prevents oxidation of the epitaxial layer. A high-temperature anneal allows the partially oxidized silicon layer to separate into distinct layers of silicon and SiO2, producing a buried oxide layer. This method provides a low cost means of producing silicon-on-insulator (SOI) wafers.
Abstract: In a process for producing an aluminum support of a lithographic printing plate, the desired aluminum support is produced by imparting fine asperities to an aluminum plate and then roughening it electrochemically in an acidic aqueous solution. The roughened aluminum plate may be electropolished or chemically etched.
Abstract: In a process for producing an aluminum support of a lithographic printing plate, the desired aluminum support is produced by imparting fine asperities to an aluminum plate and then roughening it electrochemically in an acidic aqueous solution. The roughened aluminum plate may be electropolished or chemically etched.
Abstract: A process for removing zinc from galvanized steel. The galvanized steel is immersed in an electrolyte containing at least about 15% by weight of sodium or potassium hydroxide and having a temperature of at least about 75° C. and the zinc is galvanically corroded from the surface of the galvanized steel. The material serving as the cathode is principally a material having a standard electrode potential which is intermediate of the standard electrode potentials of zinc and cadmium in the electrochemical series. The steel scrap is carried through the electrolyte by a conveyor which is electrically isolated from ground and which comprises a cathodic material which has a standard electrode potential which is intermediate of the standard electrode potentials of zinc and cadmium in the electrochemical series.
Abstract: Eliminating exposure of PN junctions to light capable of invoking a photovoltaic effect and/or inhibiting the oxidation and reduction reactions induced by the photovoltaic effect prevents the electrochemical dissolution of metal components on semiconductor devices by electrolysis. A darkened enclosure for use on tools for wafer CMP, brush cleaning, unloading, and rinsing will eliminate exposure. Alternatively, illumination of a semiconductor wafer can be limited to wavelengths of light that do not provide enough energy to induce a photovoltaic effect. An inhibitor in the CMP slurry and/or post-CMP water rinse blocks the oxidation and/or reduction reactions. A blocking agent, such as a high molecular weight surfactant, will interfere with both the oxidation and reduction reactions at the metal surface. Also, a poisoning agent will impede the reduction portion of electrolysis.
Type:
Grant
Filed:
February 28, 2000
Date of Patent:
June 26, 2001
Assignee:
International Business Machines Corporation
Inventors:
Daniel C. Edelstein, Wilma J. Horkans, Stephen E. Luce, Naftall E. Lustig, Keith R. Pope, Peter D. Roper
Abstract: An apparatus and method is disclosed; both of which use electrochemistry to selectively grow and remove hard oxide coatings on metals, and capacitive double layers on non-metals and semiconductors in order to predict and control the rate of surface abrasion during planarization of the surface of such materials.
Type:
Grant
Filed:
November 24, 1998
Date of Patent:
January 9, 2001
Assignee:
The John Hopkins University
Inventors:
Timothy P. Weihs, Adrian B. Mann, Peter C. Searson
Abstract: A method of making a hollow airfoil includes machining first and second parts to produce internal features thereof. The parts are then co-machined simultaneously at complementary joining surfaces. The parts are then bonded together at the co-machined joining surfaces.
Abstract: A method for making a probe device makes use of the main shaft of an electrodischarge machining machine to mount thereon a probe for effecting the drilling operation of a PCB board. Upon completion of the drilling operation, the probe is severed and then fastened with the PCB board.
Type:
Grant
Filed:
June 21, 1999
Date of Patent:
December 5, 2000
Assignee:
Industrial Technology Research Institute
Inventors:
Ching-Tang Yang, Yun-Hui Chang, Shih-Che Lo
Abstract: A method for producing an aluminum support for a lithographic printing plate comprising the steps of (a) electrolytic polishing an aluminum plate in an alkaline aqueous solution; and (b) electrochemically surface roughening the aluminum plate using direct or alternating current in an acidic aqueous solution in this order, and also a method for producing an aluminum support for a lithographic printing plate comprising an electrolytic polishing step of treating an aluminum plate used as an anode in an alkaline aqueous solution at a current density of 5 A/dm.sup.2 to 200 A/dm.sup.2 while allowing the alkaline aqueous solution to flow between the aluminum plate and an electrode at an average flow rate of 10 cm/second to 400 cm/second.
Abstract: A method of three-dimensionally microcutting a metal material suitable for molds is provided. An electrolyte is interposed between a work piece which is made of a conductive material, and an electrode. Through application of an electrolysis voltage between the work piece and the electrode with the electrolyte interposed between them, a passive state film is formed on the surface of a to-be-cut part of the work piece. Then, the passive state film on the surface of the to-be-cut part of the work piece is cut.
Abstract: A scanning apparatus has a luminous flux deflector and a single f.theta. lens. The deflector deflects a convergent luminous flux on a scanned surface at a uniform angular velocity. The f.theta. lens is arranged between the deflector and the scanned surface. The f.theta. lens is bi-convex in a main scanning direction and is made of a material having a refractive index of at most 1.6. One surface of the f.theta. lens in a main scanning direction is so curved that a radius of curvature in the main scanning direction A decreases as an angle of view in the main scanning direction increases.
Type:
Grant
Filed:
October 10, 1997
Date of Patent:
July 20, 1999
Assignee:
Minolta Co., Ltd.
Inventors:
Hiromu Nakamura, Toshio Naiki, Etsuko Shibata, Satoru Ono
Abstract: A process for manufacturing a lithographic printing plate support made of aluminum or an aluminum alloy, in which the surface of the support is mechanically roughened by graining it with a brush comprising bristles which have a bending elastic modulus of 10,000 to 40,000 kg/cm.sup.2 and a nerve of 500 g or less per bristle, whereby generation of defective products due to defects such as scratching which aluminum itself has can be prevented and a lithographic printing plate support having scumming reduction even on squeezing water out can be provided.
Abstract: A silicon on-insulator device wafer having a very thin monocrystalline film with uniform thickness. It is fabricated by vias technique in which a monocrystalline silicon film on an insulator is etched with a base silicon etching solution in an etch apparatus by applying a vias in such a way that the solution may serve as an anode and the substrate of SOI structure as a cathode. The presence of the insulator generates vacancies in a lower region of the monocrystalline silicon film and electrons in the substrate, so that the lower region charged with the vacancies is not removed by the base silicon etching solution, thereby leaving a highly uniform, thin monocrystalline silicon film.
Type:
Grant
Filed:
October 3, 1996
Date of Patent:
September 22, 1998
Assignee:
Korea Advanced Institute of Science and Technology
Abstract: A process for removing zinc from galvanized steel. The galvanized steel is immersed in an electrolyte containing at least about 15% by weight of sodium or potassium hydroxide and having a temperature of at least about 75.degree. C. and the zinc is galvanically corroded from the surface of the galvanized steel. The material serving as the cathode is principally a material having a standard electrode potential which is intermediate of the standard electrode potentials of zinc and cadmium in the electrochemical series.
Type:
Grant
Filed:
July 17, 1996
Date of Patent:
July 14, 1998
Assignee:
Metal Recovery Industries (US) Inc.
Inventors:
William A. Morgan, Frederick J. Dudek, Edward J. Daniels
Abstract: A method for producing a vehicle wheel having a polished design surface coated with a transparent coating, comprising the following steps of: producing a vehicle wheel having a design surface thereon; and coating said design surface with transparent composite material which is mainly composed of inorganic material.