Abstract: A system of manufacturing a component comprises forming a component on a conductive build plate. The component defines at least one access port and includes an inner surface that defines at least one internal passage. The system further includes forming at least one electrode within the at least one internal passage, wherein the at least one electrode is electrically isolated from the component. An electromotive force is applied to the at least one electrode to facilitate smoothing the inner surface.

Abstract: A circuit apparatuses include at least one circuit feature formed from patterning a conductive sheet. The conductive sheet includes an irregular surface and a planarized surface. Conductive sheet roughness is minimized in first regions of the circuit apparatus and is maintained in second regions of the circuit apparatus. Selectively planarizing portions of the conductive sheet allows for the utilization of lower cost rougher conductive sheets. The planarized surface allows for increased signal integrity and reduced insertion loss and the irregular surface allows for increased adhesion and enhancing reliability of the circuit apparatus.

Abstract: A method of manufacturing a component comprises forming a component on a conductive build plate. The component defines at least one access port and includes an inner surface that defines at least one internal passage. The method further includes forming at least one electrode within the at least one internal passage, wherein the at least one electrode is electrically isolated from the component. An electromotive force is applied to the at least one electrode to facilitate smoothing the inner surface.

Abstract: Methods of forming a cutting element include disposing a volume of polycrystalline material adjacent a liquid electrolytic solution and applying an electrical between the polycrystalline material and a cathode in contact with the liquid electrolytic solution to increase an oxidation state of the metal catalyst material. The polycrystalline material includes interbonded grains of hard material and metal catalyst particles in the interstitial spaces between adjacent grains of hard material. Some methods include forming a barrier over a portion of a surface of a volume of polycrystalline material.

Abstract: A refurbishing method, refurbishing apparatus and refurbished article are provided. The refurbishing method includes accessing a plurality of rotatable components attached to a turbine assembly, the turbine assembly being a portion of a turbomachine, providing a predetermined volume of a buffered electrolytic solution in an electro-polishing tank, coupling the plurality of rotatable components to a power supply, immersing an immersion portion of at least one of the plurality of rotatable components in the buffered electrolytic solution, passing an electrical energy through the immersion portion of at least one of the plurality of rotatable components while the immersion portion is immersed in the buffered electrolytic solution, wherein an electrical flux to the immersion portion electro-polishes the immersion portion, separating the immersion portion from the buffered electrolytic solution, and applying a corrosion inhibitor to the plurality of rotatable components.

Abstract: An apparatus and method for electrochemically treating the struts of an intravascular stent is disclosed. An intravascular stent is mounted in a chamber and is electrochemically treated in order to remove a portion of the stent struts in order to form an airfoil shape. The airfoil-shaped stent struts will reduce turbulent blood flow in the vasculature in which the stent is implanted thereby improving clinical outcome.

Abstract: Even a site having a complicated curved surface shape, such as a welded spot on a bottom of a nuclear reactor core, is simply and electrolytically etched without discharging an etching liquid in a large amount, whereby grain boundary on the surface of the nuclear reactor core internals can be confirmed visually. When the surface of nuclear reactor core internals is electrolytically etched, a sponge provided with holes having a communicating structure is integrated with an etching liquid, and the etching liquid is gelled, while the integrated combination is disposed in front of an electrode, followed by the application of voltage to turn on electricity at a state in which said electrode is electrically connected to the cathode of a direct-current power supply, and brought into contact with or approximated to the surface of the core internals electrically connected to the anode of the direct-current power supply.

Abstract: An electrochemical machining tool and method capable of rounding sharp edges that may be prone to cracking, for example, edge regions of cooling slots within dovetail slots of turbine wheels. The electrochemical machining tool includes an electrode and is secured to the component. The electrode of the electrochemical machining tool is inserted into a first slot, an electrolyte solution is applied between the electrode of the electrochemical machining tool and a second slot that intersects the first slot, an electrical potential is applied to the electrode and the turbine wheel to create a potential gradient between the electrode and the edge of the second slot, and material is removed from the edge of the second slot by displacing the electrode about and along the edge.

Abstract: An electrochemical finishing system for super conducting radio frequency (SCRF) cavities including a low viscosity electrolyte solution that is free of hydrofluoric acid, an electrode in contact with the electrolyte solution, the SCRF cavity being spaced apart from the electrode and in contact with the electrolyte solution and a power source including a first electrical lead electrically coupled to the electrode and a second electrical lead electrically coupled to the cavity, the power source being configured to pass an electric current between the electrode and the workpiece, wherein the electric current includes anodic pulses and cathodic pulses, and wherein the cathodic pulses are interposed between at least some of the anodic pulses. The SCRF cavity may be vertically oriented during the finishing process.

Abstract: Focused Electric Field Imprinting (FEFI) provides a focused electric field to guide an unplating operation and/or a plating operation to form very fine-pitched metal patterns on a substrate. The process is a variation of the electrochemical unplating process, wherein the process is modified for imprinting range of patterns of around 2000 microns to 20 microns or less in width, and from about 0.1 microns or less to 10 microns or more in depth. Some embodiments curve a proton-exchange membrane whose shape is varied using suction on a backing fluid through a support mask. Other embodiments use a curved electrode. Mask-membrane interaction parameters and process settings vary the feature size, which can generate sub-100-nm features. The feature-generation process is parallelized, and a stepped sequence of such FEFI operations, can generate sub-100-nm lines with sub-100-nm spacing. The described FEFI process is implemented on copper substrate, and also works well on other conductors.

Abstract: Conventional electrochemical machining process requires fixed shaped tool cathodes, which makes retooling time consuming and expensive. Flexible tool cathodes include elastically deformable cathodes that can deform in two or three dimensions and can adapt to the contour of the workpiece while the workpiece is moving relative to the flexible tool cathode. That is, the flexible tool cathode can perform tracing. Certain flexible tool cathodes can be also used for special configurations such corners and edges. The flexible tool cathodes can be used to polish, finish, or shape the workpiece through electrochemical processes.

Abstract: Methods and apparatuses of stents with likely reduced rates of tissue perforation are provided. Some embodiments include reducing the profile of a portion of the stent using a wire profile reduction electropolishing bath and/or other wire profile reduction means.

Abstract: A process for preparing the cutting edge of a cutting tool having a rake face and a clearance face. The process comprises the elimination of material from the cutting edge by providing a series of rapidly recurring electrical spark discharges in a gap located between the tool edge and a counterface. The spark discharges vaporize and melt the tool edge to form a desired radius.

Abstract: The present invention provides a nano-presion photo/electrochemical planarization and polishing method and an apparatus therefor. The method comprises through electrochemical, photochemical or photoelectrochemical means, an etchant being generated on a surface of a tool electrode which has a nanometer-sized planeness; the generated etchant reacting with a scavenger contained in an working electrolyte solution, or decaying itself in the working electrolyte solution, such that a confined etchant liquid layer is generated on the tool electrode surface and having a confined thickness of nanoscale; and by a chemical reaction between the etchant contained in the confined etchant liquid layer and a surface of a workpiece, the surface of the workpiece being polished or planarized to a nanometer scaled profile precision and surface roughness, thereby, realizing the planarization and polishing in nano-precision for the workpiece.

Abstract: A method for electrochemically processing a workpiece surface using an electrode, which has at least one effective surface for processing the workpiece surface, and using an electrolyte, wherein the electrolyte is suctioned away from the effective surface. The invention further relates to an electrode, which has at least one electrolyte feed for supplying the electrolyte to the effective area and an electrolyte suctioning system for suctioning the electrolyte away from the effective area.

Abstract: A method for etching a selected area of a conductive metal oxide layer deposited on a support is provided. The method comprises removing the area via electrochemical route in the presence of a polarized microelectrode and an electrochemical solution. In addition, an etched layer obtained with the foregoing method is provided.

Abstract: The electrolytic action torch (2, 12, 19, 22, 26) for the surface treatment of metals, comprises a nib (4, 11) connected with the unipolar supply of electric current (7) from an external apparatus, the other pole being connected with the metal surface being treated and a device for protecting the operator from the gases and vapors generated, and the protection device consists of a member suitable for providing the area of the nib with a flow of pressurized air (3, 5, 9, 23, 27, 29, 36). Different integrated and non-integrated embodiments of the delivery member of air in the vicinity of the nib are described.

Abstract: An electrolytic method for extracting components from subsurface strata including providing a carrier fluid; providing a pair of electrodes within a container, the container having a first outlet located proximal to a first electrode of the pair of electrodes and a second outlet located proximal to a second electrode of the pair of electrodes; flowing the carrier fluid through the container; applying a potential to the pair of electrodes to produce a first ionized carrier fluid and a second ionized carrier fluid in the container; removing the first ionized carrier fluid from the container through their respective outlets; injecting one of the first ionized carrier fluid and the second ionized carrier fluid into the subsurface strata to release the components; and recovering one of the first ionized carrier fluid and second ionized carrier fluid and components from the subsurface strata.

Abstract: An apparatus and method for electrochemically treating the struts of an intravascular stent is disclosed. An intravascular stent is mounted in a chamber and is electrochemically treated in order to remove a portion of the stent struts in order to form an airfoil shape. The airfoil-shaped stent struts will reduce turbulent blood flow in the vasculature in which the stent is implanted thereby improving clinical outcome.

Abstract: A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.

Abstract: A method of fabricating a component is provided. The method includes depositing a fugitive coating on a surface of a substrate, where the substrate has at least one hollow interior space. The method further includes machining the substrate through the fugitive coating to form one or more grooves in the surface of the substrate. Each of the one or more grooves has a base and extends at least partially along the surface of the substrate. The method further includes forming one or more access holes through the base of a respective one of the one or more grooves to connect the respective groove in fluid communication with the respective hollow interior space. The method further includes filling the one or more grooves with a filler, removing the fugitive coating, disposing a coating over at least a portion of the surface of the substrate, and removing the filler from the one or more grooves, such that the one or more grooves and the coating together define a number of channels for cooling the component.

Abstract: The present invention is a container and a processing for passivating the internal surface of the container to store monochlorosilane in a stable manner without degradation of the monochlorosilane. Various container surface modifications have been identified to reduce surface reactions to acceptable levels. Some of the described surface modifications result in significant reduction in monochlorosilane instability.

Abstract: A surface treatment device for applying a surface treatment medium to an article is provided with the surface treatment device having an application member for applying the surface treatment medium to the article and an electrode, which applies an electrical potential between the application member and the article. The device provides localized treatment to the article and can remove oxide layers or the like from metallic materials without removing or damaging the underlying metallic material.

Abstract: This invention includes energizing an electrode in which the surface facing a cavity is exposed as one electrode for electrolytic etching and the other electrode provided at the outside and contacting an electrolytic etching solution to perform electrolytic etching of a sacrificial layer to form a cavity. Thereafter, a removal agent is introduced from an etching hole to reduce residues of the sacrificial layer due to the electrolytic etching.

Abstract: Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.

Abstract: A porous silicon implant impregnated with a beneficial substance, such as a micromineral required for healthy physiology, is implanted subcutaneously and is entirely corroded away over the following months/year to release the micromineral in a controlled manner. In a second embodiment the implant may have a large number of holes which contain beneficial substance and which are closed by bio-errordable doors of different thickness so as to stagger the release of the beneficial substance over time as the doors are breached.

Abstract: Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

Abstract: A polishing pad includes at least one conductive polishing element supported by a compressible under layer having conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer. The polishing pad may further include a proton exchange membrane placed over the cathodic element. A semiconductor wafer having a metal film thereon may be polished using the polishing pad by placing the wafer in contact with the polishing element, applying anodic current to the polishing element and cathodic current to the cathodic element, and polishing with an anodic solution. For copper films, a sulfuric acid-copper sulfate solution may be used.

Abstract: An apparatus and process is disclosed for the electrolytic removal of metal from a device, such as a medical device. More particularly, the apparatus of the invention includes a mandrel having slots or openings therein to expose portions of a metallic device, such as a stent, to an electrolytic solution to remove metal from the exposed portion.

Abstract: This invention provides membrane-mediated electropolishing (MMEP) processes for polishing and/or planarizing metal work pieces using topographically patterned membranes. The processes can be used for both pure metals and alloys, and provide advantages over conventional electropolishing processes and known MMEP processes using smooth membranes. This invention also provides a cathode half-cell and an apparatus useful in membrane-mediated electropolishing processes. The invention also provides processes for electroengraving and electromachining topographic patterns, holes and/or grooves into the surface of a metal work piece.

Abstract: Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.

Abstract: Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.

Abstract: Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.

Abstract: An electrode assembly includes a distribution plate having a plurality of grooves that communicate with openings in an overlying polishing pad layer. The grooves include end openings that allow for draining of process solution, both during processing and subsequent cleaning/rinsing of the pad. Drainage occurs continually during processing, cleaning and rinsing, and so is constricted through the end openings relative to the grooves, to prevent wastage. The end openings are sufficiently large, however, to substantially completely drain fluids from the grooves between steps without delaying robotic motions.

Abstract: A system for removing a thin metal film is disclosed. The system comprises an inclined metal plate electrode for guiding a downward electrolyte flow, an auxiliary electrode placed on either the upstream or downstream side of the metal plate electrode such that a part of the auxiliary electrode is immersed into the electrolyte, and a power supply for applying a DC voltage to the both electrodes. The system is used to remove a metal thin film on the surface of an insulator by making the electrolyte flowing down the metal plate electrode strike against the metal thin film while the DC voltage is applied to the metal plate electrode and auxiliary electrode.

Abstract: An electrolytic processing apparatus can increase the efficiency of the dissociation reaction of water and efficiently perform electrolytic processing, and can eliminate the need for an operation of a change of ion exchanger. The electrolytic processing apparatus includes: a processing electrode and a feeding electrode; a liquid supply section for supplying a liquid containing an ion-exchange material between the workpiece and at least one of the processing electrode and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a drive section for moving the workpiece and at least one of the processing electrode and the feeding electrode relative to each other; wherein electrolytic processing of the workpiece is carried out while keeping the workpiece not in contact with but close to the processing electrode at a distance of not more than 10 ?m.

Abstract: A method and a device for locally removing coatings from components. An absorbent medium supplied with a coating removal liquid is brought into contact with one or more areas of a component from which a coating is to be removed.

Abstract: A process for electrochemically etching a layer with electric conduction properties, of the doped metal oxide type, on a transparent substrate of the glass type, fitted with a mask capable of being removed after etching. The process brings at least one region to be etched of the layer into contact with an electrically conducting solution, immerses an electrode in the solution and places the electrode facing and at a distance from the region, and applies an electrical voltage between the electrode and the layer to be etched. The electrode has an oblong shape such that the etching is carried out on several regions of the layer over a width of the substrate.

Abstract: The present electropolishing electrolyte comprises an acid solution and an alcohol additive having at least one hydroxy group, wherein the contact angle of the alcohol additive is smaller than the contact angle of the acid solution on a metal layer under electropolishing. The alcohol additive is selected methanol, ethanol and glycerol, and the acid solution comprises phosphoric acid. The volumetric ratio of glycerol to phosphoric acid is between 1:50 and 1:200, and is preferably 1:100. The volumetric ratio is between 1:100 and 1:150 for methanol to phosphoric acid, and between 1:100 and 1:150 for ethanol to phosphoric acid. In addition, the acid solution further comprises an organic acid selected from the group consisting of acetic acid and citric acid. The concentration is between 10000 and 12000 ppm for the acetic acid, and between 500 and 1000 ppm for citric acid.

Abstract: A method and apparatus for retaining electrolyte on a rotating platen using directional air flow is provided. In one embodiment, an apparatus for processing a substrate is provided. The apparatus includes a platen assembly having a surface for supporting a processing pad and disposed on a stationary base so that the platen assembly may rotate relative to the base; and an air knife coupled to the base and extended over a portion of the surface, the air knife operable to deliver a stream of air toward the pad to divert at least a portion of a fluid disposed on the pad toward a center of the pad.

Abstract: A method and apparatus for electropolishing a conductive layer on a wafer is provided. The apparatus includes an electrode and a conductive member having openings permitting an electropolishing solution to flow through it. Surface of the conductive member includes a surface profile. During the electropolishing process, the surface of the conductive element is placed across from the conductive layer and a potential difference is applied between the conductive layer and the electrode. The process forms a conductive layer profile of the conductive layer.

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract: A system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between conductive surface and an electrode and establishing relative motion between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.

Abstract: This invention provides a membrane-mediated electropolishing process for polishing and/or planarizing metal work pieces. The work piece is wetted with a low-conductivity fluid. The wetted work piece is contacted with a first side of a charge-selective ion-conducting membrane, wherein the second side contacts a conductive electrolyte solution in electrical contact with a cathode. Current flow between the cathode and the work piece electropolishes metal from the work piece. This process can be used for both pure metals and alloys, and provides several significant advantages over conventional electropolishing processes. This invention also provides an apparatus useful in the membrane-mediated electropolishing process.

Abstract: A metal is provided on a polymeric component and the component is subjected to a removal process such as plasma or liquid etching in the presence of an electric field. The etchant selectively attacks the polymer at the boundary between the metal and the polymer, thereby forming gaps alongside the metal. A cover metal may be plated onto the metal in the gaps. The cover metal protects the principal metal during subsequent etching procedures.

Abstract: A device and method for increasing the mass transport rate of a chemical or electrochemical process at the solid and fluid interface in a fluid cell. The device includes a membrane in close contact with surface of the work piece, to separate the process cell into two chambers, so that fluid velocity at the work piece is controlled separately from the main cell flow. Thus the diffusion boundary layer is controlled and minimized by the rate that fluid is withdrawn from the work piece chamber.

Abstract: An electrochemical machining apparatus comprises a machining chamber for holding ultrapure water, a cathode/anode immersed in the ultrapure water held in the machining chamber, and a workpiece holding portion for holding a workpiece at a predetermined distance from the cathode/anode so that a surface, to be machined, of the workpiece is brought into contact with the ultrapure water. The electrochemical machining apparatus further comprises an anode/cathode contact brought into contact with the workpiece held by the workpiece holding portion so that the workpiece serves as an anode/cathode, a catalyst having a strongly basic anion exchange function or a strongly acidic cation exchange function, a power source for applying a voltage between the cathode/anode and the workpiece, and a moving mechanism for relatively moving the workpiece and the catalyst. The catalyst is disposed between the cathode/anode and the workpiece held by the workpiece holding portion.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer.

Abstract: The device etches semiconductors with a large surface area in a trough-shaped receptacle containing a liquid electrolyte. A sample head is mounted inside the etching trough, and is provided with a device for holding at least one semiconductor wafer. The device is tilted to promote turbulent electrolyte flow in a space between a bottom surface of the semiconductor wafer and top surface of the trough-shaped receptacle.

Abstract: A substrate processing apparatus can perform an electrolytic processing, which is different from a common, conventional etching, to remove (clean off) a conductive material (film) formed on or adhering to a bevel portion, etc. of a substrate, or process a peripheral portion of a substrate through an electrochemical action. The substrate processing apparatus includes: an electrode section having a plurality of electrodes which are laminated with insulators being interposed, and having a holding portion which is to be opposed to a peripheral portion of a substrate; an ion exchanger disposed in the holding portion of the electrode section; a liquid supply section for supplying a liquid to the holding position of the electrode section; and a power source for applying a voltage to the electrodes of the electrode section so that the electrodes alternately have different polarities.