Abstract: A MEMS fabrication process eliminates through-wafer etching, minimizes the thickness of silicon device layers and the required etch times, provides exceptionally precise layer to layer alignment, does not require a wet etch to release the moveable device structure, employs a supporting substrate having no device features on one side, and utilizes low-temperature metal-metal bonding which is relatively insensitive to environmental particulates. This process provided almost 100% yield of scanning micromirror devices exhibiting scanning over a 12° optical range and a mechanical angle of ±3° at a high resonant frequency of 2.5 kHz with an operating voltage of only 20 VDC.

Abstract: A slider assembly is provided comprising a plurality of sliders bonded by a debondable solid encapsulant. The solid encapsulant is comprised of a silicon-based polymer. Each slider has a surface that is free from the encapsulant. The encapsulant-free surfaces are coplanar to each other. Also provided are methods for forming the assembly and methods for patterning a slider surface using the encapsulant.

Abstract: A method for forming a microstructure from a substrate is provided. The method includes providing a monocrystalline substrate having a (100) orientation and subjecting a first portion of the substrate to ion bombardment to effect ion implantation to a desired penetration depth. A second portion of the substrate is etched to a depth at least as great as the desired penetration depth. The substrate then is thermally treated to form a microstructure at a surface of the substrate and to effect at least partial separation between the microstructure and the substrate.

Abstract: A method for fabricating devices in a pre-assembled state comprising forming plural laminae, registering the laminae, and bonding the laminae one to another is described. The plural laminae contain the substructures and structures of the device. The substructures are coupled to structures and other substructures by fixture bridges in the pre-assembled state. The substructures of the device are dissociated by eliminating the fixture bridges. The plural laminae are registered and bonded to form the device either before or after the fixture bridges are eliminated. The fixture bridges can be eliminated in a variety of ways, including vaporization by electrical current, chemical dissolution, or thermochemical dissociation. One method to selectively bond the laminae together is by microprojection welding. Microprojection welding comprises forming laminae with projections that extend from at least one planar surface of the lamina.

Abstract: A staggered torsional electrostatic combdrive includes a stationary combteeth assembly and a moving combteeth assembly with a mirror and a torsional hinge. The moving combteeth assembly is positioned entirely above the stationary combteeth assembly by a predetermined vertical displacement during a combdrive resting state. A method of fabricating the staggered torsional electrostatic combdrive includes the step of deep trench etching a stationary combteeth assembly in a first wafer. A second wafer is bonded to the first wafer to form a sandwich including the first wafer, an oxide layer, and the second wafer. A moving combteeth assembly is formed in the second wafer. The moving combteeth assembly includes a mirror and a torsional hinge. The moving combteeth assembly is separated from the first wafer by the oxide layer. The oxide layer is subsequently removed to release the staggered torsional electrostatic combdrive.

Abstract: A vehicle bed assembly 10 has a floor pan 18, a front wall 20, and substantially identical side walls 14, 16. The front wall 20 and the side walls 14, 16 are coupled to the floor pan 18. The vehicle bed assembly 10 further includes a rear wall 22 which is deployed upon a tailgate 21 which is selectively coupled to the floor pan 18, and a pair of substantially identical top rail members 100 which overlay and receive a unique one of the side walls 14, 16 and a bracket 210 which overlays and receives the front wall 20 and which is coupled to the top rail member 100 by a pair of end cap members 122. Particularly, the end cap members 122 and the top rail members 100 cooperatively provide a direct load path from any location on each of the side walls 14, 16 to the bracket 210 which may be coupled to a portion of the vehicle 12, thereby reducing the likelihood of damage to the sidewalls 14, 16 and the front wall 20.

Abstract: The present invention relates to a method of manufacturing a piezoelectric device of high sensitivity using direct bonded quartz plate. To achieve this object, the invented method comprises the steps of covalently bonding a plurality of quartz plates, dry etching the bonded quartz plates with plasma from one side of its surfaces down to a bonded plane, and dry etching with plasma thereafter from the other side of the surfaces.

Abstract: A donor substrate (12) which is patterned to include a donor mesa (18) is bonded to a receiving substrate (20). In a one embodiment, a bulk portion of the donor substrate is removed while leaving a transferred layer (26) bonded to the receiving substrate. The transferred layer is a layer of material transferred from the donor mesa. A portion of receiving substrate can be processed to form a recess (27, 28, or 32) to receive the donor mesa. Alternatively, the transferred layer can be formed over a dummy feature (46) formed on the receiving substrate, either with or without the use of mesas on the donor substrate. In a preferred embodiment, the transferred layer is used to form an optical device such as a photodetector in a semiconductor device. With the invention, bonding can be achieve despite having a non-planar surface on the receiving substrate.

Abstract: This invention relates to a relatively thin cladded graphic arts impression graphic arts impression die plate (20) having a steel layer (22) which is integral throughout the extent thereof with a layer of copper (24) or bronze. A relieved design-defining surface may be formed in the copper or bronze layer by a chemical etching process or by chemical milling. The graphic arts impression die plate may be mounted on a magnetic support member (28) to present an assembly which increases the thickness of the die assembly sufficiently to permit use thereof on standard stamping and embossing equipment without modification of the die-supporting chase. The magnetic support member (28) has a plurality of pairs of permanent magnets (33, 35) each pair of which is embedded within a respective cavity (32) and that are magnetically bridged by a steel plate 36.

Abstract: This invention relates to a relatively thin cladded graphic arts impression graphic arts impression die plate (20) having a steel layer (22) which is integral throughout the extent thereof with a layer of copper (24) or bronze. A relieved design-defining surface may be formed in the copper or bronze layer by a chemical etching process or by chemical milling. In the case of chemical etching of the graphic arts impression die plate (20), a design-defining layer of photo-resist is applied to the outer surface of the copper layer (24) or the bronze layer and the relieved design is formed in the copper or bronze layer using a conventional ferric chloride etching solution. The etched graphic arts impression die plate may be mounted on an etchant-resistant backing or magnetic support member (28) to present an assembly which increases the thickness of the die assembly sufficiently to permit use thereof on standard stamping and embossing equipment without modification of the die-supporting chase.

Abstract: A sheet including lead regions with conductors and a main region surrounding the lead regions is formed on the front surface of a microelectronic element such as a wafer, or assembled thereto, so that the conductors are connected to contacts on the microelectronic element. After the sheet is in place, the sheet is eroded to form gaps partially bounding the lead regions, leaving tip ends of the lead regions moveable with respect to the main region. The tip ends of the lead regions, or the main region, is lifted away from the microelectronic element, thus bending the tip ends away from the main region. Because the gaps are not formed until after the conductors are connected to the contacts, the connecting step is simplified.

Abstract: A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.

Abstract: A multi-layer electronic circuit board design 10 having selectively formed apertures or cavities 26, and which includes grooves or troughs 20, 22 which are effective to selectively entrap liquefied adhesive material, thereby substantially preventing the adhesive material from entering the apertures 26.

Abstract: Wafer-to-wafer bonding using, e.g., solder metal bonding, glass bonding or polymer (adhesive) bonding is improved by profiling one or both of the wafer surfaces being bonded to define microstructures therein. Profiling means providing other than the conventional planar bonding surface to define cavities therein. The bonding material fills the cavities in the microstructures. For instance, a system of ridges and trenches (e.g. in cross-section vertical, slanted, key-holed shaped, or diamond-shaped) are microstructures that increase the surface area of the wafers to which the bonding material can adhere. Use of the key-hole shaped or diamond-shaped profile having a negative slope at the trench interior substantially increases the bonding force.

Abstract: A wafer level interconnecting mechanism for assembling and packaging multiple MEMS devices (modules), using microfabricated, interlocking, mechanical joints to interconnect different modules and to create miniature devices. Various devices can be fabricated using these joints, including fiber-optic switches, xyz translational stages, push-n-lock locking mechanisms, slide-n-lock locking mechanisms, t-locking joints, fluidic interconnects, on/off valves, optical fiber couplers with xy adjustments, specimen holders, and membrane stops.

Abstract: A method and apparatus for resist strip. Wafers (108) with a patterned resist formed thereon are placed in a carrier (104) in a process chamber (102). An ozonated deionized water mist (120) is sprayed on the surface of wafer (108). The ozonated deionized water mist (120) strips the resist and removes the resist residue without the use of hazardous chemicals. The ozonated deionized water mist (120) may be formed in an atomizer that mixes deionized water (116) with ozone (118). The ozonated deionized water mist (120) is then sprayed onto the wafers (108) while the wafers are being rotated.

Abstract: A multilayer rigid flex printed circuit board wherein the board laminate comprises a basestock composite containing a flexible core, formed by laminating a first conductive layer to a flexible insulator layer, a second insulator layer affixed to the basestock, said second insulator layer having a cutout region proximate to the flexible core of the basestock composite to expose a portion of said first conducting layer on said flexible core, a second conductive layer attached to said second insulator layer said second conductive layer having a cutout region proximate to the flexible core of the basestock composite, and a photo-imageable soldermask applied to the exposed portion said first conducting layer, and to the second conductive layer, wherein said photoimageable soldermask allows for photo definition of openings on the conductive layers to which it is applied.

Abstract: This invention uses large surface to volume ratio materials for separation, release layer, and sacrificial material applications. The invention outlines the material concept, application designs, and fabrication methodologies. The invention is demonstrated using deposited column/void network materials as examples of large surface to volume ratio materials. In a number of the specific applications discussed, it is shown that it is advantageous to create structures on a laminate on a mother substrate and then, using the separation layer material approach, to separate this laminate from the mother substrate using the present separation scheme. It is also shown that the present materials have excellent release layer utility. In a number of applications it is also shown how the approach can be used to uniquely form cavities, channels, air-gaps, and related structures in or on various substrates.

Abstract: This invention relates to a relatively thin cladded graphic arts impression graphic arts impression die plate (20) having a steel layer (22) which is integral throughout the extent thereof with a layer of copper (24) or bronze. A relieved design-defining surface may be formed in the copper or bronze layer by a chemical etching process or by chemical milling. In the case of chemical etching of the graphic arts impression die plate (20), a design-defining layer of photo-resist is applied to the outer surface of the copper layer (24) or the bronze layer and the relieved design is formed in the copper or bronze layer using a conventional ferric chloride etching solution. The etched graphic arts impression die plate may be mounted on an etchant-resistant backing or magnetic support member (28) to present an assembly which increases the thickness of the die assembly sufficiently to permit use thereof on standard stamping and embossing equipment without modification of the die-supporting chase.

Abstract: A process for forming an inorganic material layer pattern on a substrate. The process includes the steps of transferring an inorganic powder dispersed paste layer supported on a support film to the surface of the substrate to form the inorganic powder dispersed paste layer on the substrate; forming a resist film on the inorganic powder dispersed paste layer transferred to the surface of the substrate; exposing the resist film to light through a mask to form a latent image of a resist pattern; developing the exposed resist film to form the resist pattern; etching exposed portions of the inorganic powder dispersed paste layer to form an inorganic powder dispersed paste layer pattern corresponding to the resist pattern; and baking the pattern to form an inorganic material layer pattern.

Abstract: A process for the preparation of an electrode, which comprises: (1) transferring a conductive paste layer supported on a base film to a substrate to form the conductive paste layer on the substrate; (2) forming a resist film on the conductive paste layer transferred to the substrate; (3) exposing the resist film through a mask to form a resist pattern latent image; (4) developing the exposed resist film to form a resist pattern; (5) etching exposed portions of the conductive paste layer to form a conductive paste layer pattern corresponding to the resist pattern; and (6) thermosetting the pattern to form a conductive layer pattern.

Abstract: A substrate on which a plurality of thin films having a plurality of cross-sections corresponding to the cross-section of a micro-structure are formed is placed on a substrate holder. The substrate holder is elevated to bond a thin film formed on the substrate to the surface of a stage, and by lowering the substrate holder, the thin film is separated from the substrate and transferred to the stage side. The transfer process is repeated to laminate a plurality of thin films on the stage and to form the micro-structure. Accordingly, there are provided a micro-structure having high dimensional precision, especially high resolution in the lamination direction, which can be manufactured from a metal or an insulator such as ceramics and can be manufactured in the combined form of structural elements together, and a manufacturing method and an apparatus thereof.

Abstract: A micromachined fluid handling device having improved properties. The valve is made of reinforced parylene. A heater heats a fluid to expand the fluid. The heater is formed on unsupported silicon nitride to reduce the power. The device can be used to form a valve or a pump. Another embodiment forms a composite silicone/parylene membrane. Another feature uses a valve seat that has concentric grooves for better sealing operation.

Abstract: A multilayer rigid flex printed circuit board wherein the board laminate comprises a basestock composite containing a flexible core, formed by laminating a first conductive layer to a flexible insulator layer, a second insulator layer affixed to the basestock, said second insulator layer having a cutout region proximate to the flexible core of the basestock composite to expose a portion of said first conducting layer on said flexible core, a second conductive layer attached to said second insulator layer said second conductive layer having a cutout region proximate to the flexible core of the basestock composite, and a photo-imageable soldermask applied to the exposed portion said first conducting layer, and to the second conductive layer, wherein said photoimageable soldermask allows for photo definition of openings on the conductive layers to which it is applied.

Abstract: A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

Abstract: A substrate on which a plurality of thin films having a plurality of cross-sections corresponding to the cross-section of a micro-structure are formed is placed on a substrate holder. The substrate holder is elevated to bond a thin film formed on the substrate to the surface of a stage, and by lowering the substrate holder, the thin film is separated from the substrate and transferred to the stage side. The transfer process is repeated to laminate a plurality of thin films on the stage and to form the micro-structure. Accordingly, there are provided a micro-structure having high dimensional precision, especially high resolution in the lamination direction, which can be manufactured from a metal or an insulator such as ceramics and can be manufactured in the combined form of structural elements together, and a manufacturing method and an apparatus thereof.

Abstract: A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

Abstract: A method for contacting at least one printed circuit board or at least one punched grid and at least one hybrid includes the steps of: forming contact elements in a contacting foil, positioning the contacting foil over the hybrid in such a way that the contact elements are arranged at preselected positions between the printed circuit traces of the hybrid and the printed circuit traces of the printed circuit board, and etching away at least a portion of the contacting foil, such that the contact elements are at least partially freely accessible.

Abstract: The present invention relates to a fabrication process relating to a fabrication process for manufacture of micro-electromechanical (MEM) devices such as cantilever supported beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate as the carrier substrate and single crystal silicon as the MEM component material. The process further includes deposition of an optional layer of insulating material such as silicon dioxide on top of a layer of doped silicon grown on a silicon substrate. The silicon dioxide is epoxy bonded to the glass substrate to create a silicon--silicon dioxide-epoxy-glass structure. The silicon is patterned using anisotropic plasma dry etching techniques.

Abstract: A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

Abstract: In a rigid/flex circuit board and fabricating process, patterns of electrical traces are formed by etching conductive layers on outer surfaces of a flexible multi-layer circuit structure. A protective barrier material is deposited on the etched traces using an "electroless" process, such as immersion of the flexible circuit board in an aqueous solution containing ionic tin. The protective barrier material adheres to and encapsulates the copper traces. An outer circuit structure including a bondfilm of epoxy-impregnated fiberglass ("prepreg" bondfilm) and a copper foil layer is laminated onto the flexible circuit structure. The prepreg bondfilm has a window area removed by routing or an equivalent process prior to being laminated to the flexible structure. The window area defines a flex area of the rigid/flex circuit board that will be relatively flexible.

Abstract: A method for fabricating an SOI substrate is provided, which has an active substrate formed as a thin film. The method comprises the steps of: using a both-side polishing apparatus to polish both sides of a supporting substrate 1; bonding an active substrate 2 onto the supporting substrate 1. to form a bonded-wafer; removing an unbonded portion formed at the circumference of the bonded-wafer; flat grinding the active substrate 2 to reduce the thickness thereof; etching the active substrate 2 by spin etching; and processing the active substrate to be a thin film by PACE processing.

Abstract: A thin film is transferred from an initial substrate onto a final substrate. The process includes the following successive stages: joining of the thin film (112) onto a handle substrate (120) comprising a cleavage zone, elimination of the initial substrate, joining of the thin film (112) with a final substrate (132), and cleavage of the handle substrate (120) following the cleavage zone. The cleavage zone includes a film of micro-bubbles formed by ion implantation. The invention has, in particular, applications in the fabrication of three-dimensional structures of integrated circuits.

Abstract: Compliant universal (CU) substrates and techniques for forming the same facilitate growth of epitaxial layers comprised of materials which are highly lattice mismatched with the substrate material. The CU substrates employ very thin (e.g., 1-20 nm or less) substrate layers which are loosely bonded to a thick bulk material base layer. Because of the loose bonding, the bonding energy of the atoms in the thin substrate layer is reduced, thus greatly increasing the flexibility of the thin substrate layer. This enables the substrate layer to absorb strain or stress imparted during the growth of lattice mismatched epitaxial layers, thus avoiding the formation of defects in the epitaxial layers. The "loose" bonding of the thin substrate layer to the base layer can be achieved in any of a number of ways. First, the thin substrate layer can be bonded at an angle relative to the base layer so that screw dislocations form which provide the desired reduction in bonding energy and increase in flexibility.

Abstract: A process for transfer printing papers having a flip-flop effect is disclosed. A substrate consisting of a base paper, a glue, a transparent tape, a transparent resin, a hydrophilic paint and a metal layer is manufactured by a vapor deposition method. A flip-flop ink having a predetermined pattern is printed on the substrate. The metal layer which is not covered by the ink is etched by an alkaline solution. The alkaline solution is neutralized by an acid solution. The substrate is washed and then dried so that the transfer printing papers having a flip-flop effect are obtained.

Abstract: A method for preparing the air bearing surface of a slider for etch patterning including the steps of applying a first thin film to a carrier, applying a second thin film to the carrier, the first thin film and the second thin film separated by a recess, each of the first and second thin films having respective first and second air bearing surfaces, applying an adhesive film over the first and second thin films, depositing a fluid in the recess, the fluid held in the recess by the adhesive film, curing the fluid, and removing the adhesive film. The method of the invention may also include coating the first and second air bearing surfaces with an etch mask, developing the etch mask, and patterning the first and second air bearing surfaces.

Abstract: The present invention provides a process for fabricating an SOI substrate with no peripheral scratches and with enhanced fabrication efficiency. The present process includes bonding a semiconductor wafer of an active substrate 1 and a semiconductor base wafer 2 to form a bonded wafer 4; surface-grinding the active substrate 1; spin etching the surface-ground active substrate 1; and PACE processing the etched active substrate 1 to form the active substrate into a thin film and simultaneously, to remove the non-bonded peripheral portion of the bonded wafer 4.

Abstract: A supporting member or first synthetic resin sheet with conductive bumps disposed at predetermined positions are superposed on a second synthetic resin sheet under the condition that the resin component of the second synthetic resin sheet is plastic deformed or the temperature thereof exceeds a glass transition temperature so that the conductive bumps are pierced into the second synthetic resin sheet. In other words, the conductive bumps are pierced vertically into the second synthetic resin sheet so as to form through-type conducive lead portions exposed to the first (supporting substrate) and second synthetic resin sheets. The through-type conductive lead portions are used to electrically connect electric devices and circuit and to connect wiring pattern layers. The conductive bumps can be precisely and densely formed and disposed by printing method or plating method. The conductive bumps can be pushed and pierced into the second synthetic resin sheet.

Abstract: This process for producing a structure incorporating a substrate (2), a thin surface film (16) made from a non-conducting material joined to one face (1) of the substrate (2), said substrate (2) having cavities (10) flush with said face (1), comprises the following successive stages:etching cavities (10) in one face (1) of a substrate, the cavities having in the plane of the substrate face at least one dimension which is a function of the thickness of the surface film, in order to correctly secure the latter,joining a non-conducting material wafer (12) to the face (1) of the substrate (2),thinning the wafer (12) to obtain the thin surface film.

Abstract: A method for mounting a semiconductor wafer on a polishing block to hold the semiconductor wafer during polishing. The method comprises the steps of providing a polishing block having a surface for mounting the semiconductor wafer and providing a heater comprising a heater body and a thermally conductive buffer plate which is selectively moveable with respect to the heater body between a pre-heating position in which the plate is spaced from the heater body and a heating position in which the plate contacts the heater body. A bonding agent is applied to the polishing block surface. The polishing block is placed on the buffer plate when the buffer plate is positioned in the pre-heating position and the buffer plate is moved from the pre-heating position to the heating position to heat the buffer plate, the polishing block and the bonding agent.

Abstract: A method of fabricating a substrate includes the steps of providing a first substrate having a first thickness, providing a second substrate having a second thickness, providing an inner layer between the first and second substrates, assembling the first substrate, the second substrate, and the inner layer using an adhesive, and reducing the thickness of at least one of the first and second substrates.

Abstract: A semiconductor device having a substrate with an insulating surface and a non-porous semiconductor region bonded to the body of the device. A porous semiconductor region on the surface of the substrate was removed by etching.

Abstract: A metallic sheet (10) is laminated between a pair of photoresist layers (26, 30) having different properties which permit one photoresist (26) to be stripped from the metallic sheet, substantially without effecting the other photoresist (30). A thin gauge blank or article (56) is photo-chemically machined from the lamination and the photoresist (26) is stripped from one side, leaving the other photoresist (30) to provide electrical insulation on just one side of the article.

Abstract: A method for forming an array of thin film actuated mirrors for use in an optical projection system comprises the steps of: (a) providing a base; (b) depositing a separation layer on top of the base; (c) forming a first an electrodisplacive, a second, an elastic and a sacrificial layers successively on top of the separation layer; (d) forming an array of M.times.N supporting members, each thereof having a conduit; (e) patterning to form an array of multilayered actuated mirror structures; (f) attaching an active matrix included therein an array of transistors to the array of multilayered actuated mirror structures; (g) separating the base to form said array of thin film actuated mirrors. In the inventive method, the heat treatment of the electrodisplacive layer is carried out prior to the attaching of the active matrix, thereby preventing the transistors from being degraded by the heat.

Abstract: In a process for producing a multilayer printed circuit board comprising drilling holes for via holes in a composite film material containing at least a copper foil and an insulating half-cured adhesive layer, laminating the resulting film material on an innerlayer circuit substrate, ad electrically connecting an innerlayer circuit with an outer layer copper foil, when an adhesive resin flowed into the holes is roughened, or when a composite film material having a copper foil of less than 12 .mu.m thick formed on a carrier is used, or a special cushion material is further laminated on the laminate of the innerlayer circuit substrate and the film material, electrical connection reliability is enhanced and circuit density can be increased with easy steps.

Abstract: A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.

Abstract: Upon grinding a back of a substrate, a protecting tape made of a material soluble to IPA (isopropanol), for example, a vinyl acetate thermoplastic adhesive is appended on the surface of a pattern-formed layer of a wafer, grinding the back, dipping the wafer in a cleaning vessel containing IPA, and dissolving and removing the protecting tape from the wafer, thereby giving no damages to the wafer, and reducing the number of operation steps.

Abstract: In a micromotion mechanical structure, such as a vibration-type sensor or a step motor, comprising at least one fixed electrode and at least one movable electrode which is moved by electrostatic power applied to the fixed electrode, at least one of the electrodes is formed essentially by a single crystal semiconductor material. The single crystal semiconductor material has various merits of uniform mechanical properties, small internal stress, etc. for use in such electrodes. Such structure has been realized by attaching patterned electrode made of the material to another substrate and then removing or thinning the original substrate carrying the patterned electrodes.

Abstract: A structure and method for removing and recovering an anodically bonded glass device from a substrate using a metal interlayer interposed between the glass and the substrate is provided. As used in semiconductor mask fabrication, the structure comprises a silicon wafer substrate coated with a membrane on which a metal interlayer is disposed. The metal interlayer and a glass device are anodically bonded together. Recovery of the glass device is accomplished by chemically and mechanically removing the wafer and its membrane from the metal interlayer. The membrane is preferably removed using reactive ion etching to which the metal interlayer is resistant. The metal interlayer is then removed from the glass device using a highly corrosive chemical solution. The recovered glass device may then be reused.

Abstract: A dry sandblasting treatment for spraying abrasives onto a surface of an insulating resin layer, a chemical etching for chemically etching the surface, and a plating process for plating a conductive layer on the resulting insulating resin layer are successively performed. Since the surface of the insulating resin layer is roughened by the dry sandblasting treatment and the resulting surface is subjected to the chemical etching, a minute anchor structure is formed on the surface. Accordingly, the adhesion between the insulating resin layer and a plating layer (i.e., a circuit conductive layer) is improved. Due to the dry sandblasting treatment, the shape of a via hole formed in the insulating resin layer is improved, and an exposed surface of the circuit conductor layer and an inner wall of a through-hole are cleaned.