Abstract: Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract: A method of etching an aluminum-containing layer on a substrate is described. The method includes forming plasma from a process composition containing a halogen element, and exposing the substrate to the plasma to etch the aluminum-containing layer. The method may additionally include exposing the substrate to an oxygen-containing environment to oxidize a surface of the aluminum-containing layer and control an etch rate of the aluminum-containing layer. The method may further include forming first plasma from a process composition containing HBr and an additive gas having the chemical formula CxHyRz (wherein R is a halogen element, x and y are equal to unity or greater, and z is equal to zero or greater), forming second plasma from a process composition containing HBr, and exposing the substrate to the first plasma and the second plasma to etch the aluminum-containing layer.

Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.

Abstract: A method of depositing an active material for a metal ion battery comprising the steps of: providing a conductive material in an electrodeposition bath wherein the electrodeposition bath contains an electrolyte comprising a source of the active material; and electrodepositing the active material onto a surface of the conductive material.

Abstract: Provided in one embodiment is a method of forming a movable joint or connection between parts that move with respect to one another, wherein at least one part is at least partially enclosed by at least one second part. The method includes positioning an etchable material over an at least one first part, molding or forming an at least one second part over at least the etchable material, and removing the etchable material.

Abstract: Methods are provided for removing an oxide layer from a metal pad on an integrated circuit in order to reduce contact resistance. In one embodiment, aluminum oxide, on the surface of a bond pad substantially comprised of aluminum, is reacted with a first chemical agent to form an inorganic salt, and the inorganic salt is then reacted with a second chemical agent leaving a substantially bare, that is, unoxidized, aluminum surface.

Abstract: Methods for fabrication of leading edge shields and tapered magnetic poles with a tapered leading edge are provided. The leading edge shield may be formed by utilizing a CMP stop layer. The CMP stop layer may aid in preventing over polishing of the magnetic material. For the tapered magnetic poles with a tapered leading edge, a magnetic material is deposited on a planarized surface, a patterned resist material is formed, and exposed magnetic material is etched to form at least one tapered surface of the magnetic material.

Abstract: A method for making a three-dimensional nano-structure array includes following steps. First, a substrate is provided. Next, a mask is formed on the substrate. The mask is a monolayer nanosphere array or a film defining a number of holes arranged in an array. The mask is then tailored and simultaneously the substrate is etched by the mask. Lastly, the mask is removed.

Abstract: A workpiece including aluminum or an aluminum alloy on a surface thereof is subjected to surface treatment including the steps of immersing in an acidic or alkaline aluminum oxide film-removing solution containing a salt or oxide of a metal capable of substitution with aluminum and forming a substituted metal layer and contained in the removing solution on a surface of the aluminum or aluminum alloy while removing an aluminum oxide film on aluminum or aluminum alloy surface, forming a substituted zinc film by zinc substitution treatment without removing the substituted metal layer, removing the substituted metal layer and substituted zinc film with an oxidizing liquid, and subjecting again to zinc substitution treatment, forming a substituted zinc film.

Abstract: A method for fabricating an air-bearing surface (ABS) in a substrate having a surface is described. The substrate is for a magnetic recording head. The method includes providing a mask on the surface of substrate. The mask has an edge adjacent to a portion of the substrate exposed by the mask. The method also includes forming a taper in the portion of the substrate adjacent to the edge. The taper has an angle from the surface of the substrate of at least thirty degrees and not more than seventy degrees. The method also includes performing a reactive ion etching (RIE) to remove the portion of the substrate to form a cavity in the substrate. The angle of the taper is configured to substantially eliminated redeposition from the RIE on the edge.

Abstract: A method of forming a near field transducer (NFT) for energy assisted magnetic recording is disclosed. A structure comprising an NFT metal layer and a first hardmask layer over the NFT metal layer is provided A first patterned hardmask is formed from the first hardmask layer, the first patterned hardmask disposed over a disk section and a pin section of the NFT to be formed. An etch process is performed on the NFT metal layer via the first patterned hardmask, the etch process forming the NFT having the disk section and the pin section.

Abstract: A method of forming an aligned connection between a nanotube layer and an etched feature is disclosed. An etched feature is formed having a top and a side and optionally a notched feature at the top. A patterned nanotube layer is formed such that the nanotube layer contacts portions of the side and overlaps a portion of the top of the etched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.

Abstract: A method for the production of a structured metal layer (7) made from an alloy composed of titanium and nickel includes the following process steps: a sacrificial layer composite (3) is provided, which comprises a second sacrificial layer (2) applied onto a first sacrificial layer (1), the first sacrificial layer (1) is subjected for the purpose of structuring to a wet-chemical etching process in such a manner that undercutting of the sacrificial layer (1) occurs, a metal layer (7) of the alloy is applied indirectly or directly to the structured sacrificial layer composite (3). The first sacrificial layer (1) is at a greater distance from the metal layer (7). The second sacrificial layer (2) facing the metal layer (7) to be deposited is subjected to a dry etching process prior to wet-chemical etching of the first sacrificial layer (1) so that the second sacrificial layer (2) is provided with a structure that corresponds to the desired structure of the metal layer (7).

Abstract: The present invention prevents drop in the function of a plasma processing device caused by reduction of a plasma generating chamber by reductive plasma that is generated from the introduced process gas, and extends the life of members which are in contact with reductive plasma, especially the plasma generating chamber member. The plasma processing device of this embodiment is a device for treating the surface of a processing subject S using radicals generated by exciting a process gas, wherein a plasma generating chamber member 6, having a internal plasma generating chamber 6a, is connected to a gas introduction tube 5 attached to the outside of the process chamber 1, and a gas regulator 7 is provided on the end of the plasma generating chamber member 6.

Abstract: According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a magnetic recording layer, an oxidation inhibiting layer, a hard mask layer includes carbon on a substrate, coating the hard mask layer with a resist, transferring patterns of protrusions and recesses to the resist by imprinting to form resist patterns, sequentially performing etching of the hard mask layer using the resist patterns as masks, etching of the oxidation inhibiting layer, and etching and/or magnetism deactivation of the magnetic recording layer to form patterns of the magnetic recording layer, and sequentially performing stripping of the resist patterns, stripping of the hard mask layer and stripping of the oxidation inhibiting layer, in which ion beam etching is used for stripping the oxidation inhibiting layer.

Abstract: A method for manufacturing a thin film magnetic head includes a step for forming an MR layered body; a step for forming a first sacrificial layer made of material removable by wet etching, and subsequently, forming a cap layer on the upper surface of the first sacrificial layer; further, a step for patterning the MR layered body and the cap layer and then filling part of the removed areas of the MR layered body and the cap layer with a bias magnetic layer and the remaining with insulating layers; a step for removing the cap layer by dry etching and, subsequently, removing the first sacrificial layer by wet etching; and a step for forming a second shield layer above the MR layered body and the bias magnetic layer.

Abstract: A magnetic head includes: a pole layer including a track width defining portion and a wide portion; and an encasing layer disposed on a bottom forming layer and having a groove that accommodates the pole layer. The groove includes a first portion for accommodating at least part of the track width defining portion, and a second portion for accommodating at least part of the wide portion. A manufacturing method for the magnetic head includes: the step of etching a nonmagnetic layer that will become the encasing layer later, such that an initial groove including the first portion is formed in the nonmagnetic layer; the step of forming an initial groove mask covering the first portion; and a second etching step for etching the nonmagnetic layer so as to complete the groove. When the second etching step starts, a portion of the top surface of the bottom forming layer located in a region in which the second portion is to be formed is covered with the nonmagnetic layer or the initial groove mask.

Abstract: An etching residue removal method includes a cleaning sequence. Preferably, the cleaning sequence has a first washing processing, first drying processing, stripper processing, rinsing processing, second washing processing and second drying processing. In the first washing processing, an insulation film and metal lines thereon are washed by pure water. In the first drying processing, the insulation film and metal lines are dried in a nitrogen atmosphere at room temperature, for example. In the stripper processing, the etching residue on the insulation film and metal lines are stripped by amine stripper, for example. In the rinsing processing, the insulation film and metal lines are rinsed with an IPA rinse solution, for example. In the second washing processing, the insulation film and metal lines are washed with pure water. In the second drying processing, the insulation film and metal lines are dried in the nitrogen atmosphere at room temperature, for example.

Abstract: A method for making a plurality of electromechanical devices including attaching a laminar electromechanical structure to a receiving substrate using a not appreciably cured adhesive in a liquid state, laser cutting the laminar electromechanical structure while the adhesive is not appreciably cured to form a plurality of electromechanical devices, and curing the adhesive.

Abstract: A method of etching a multi-layer is provided. The multi-layer includes an aluminum layer disposed on a semiconductor substrate and an anti-reflection coating layer disposed on the aluminum layer. The method includes: performing a first etching process to etch the anti-reflection coating layer by providing a first etching gas, wherein the first etching gas includes a chlorine-containing substance; then performing a second etching process to etch the aluminum layer by providing a second etching gas, wherein the second etching gas does not include a chlorine-containing compound.

Abstract: A method for manufacturing a magnetic layer with a magnetic anisotropy. The method includes an endpoint detection process for determining an end point to carefully control the final thickness of the magnetic layer. The method includes depositing a magnetic layer and then depositing a sacrificial layer over the magnetic layer. A low power angled ion milling is then performed until the magnetic layer has been reached. The angled ion milling can be performed at an angle relative to normal and without rotation in order to form an anisotropic surface texture that induces a magnetic anisotropy in the magnetic layer. An indicator layer may be included between the magnetic layer and the sacrificial layer in order to further improve endpoint detection.

Abstract: The present invention related to a method for surface treatment and a method for forming fine wiring and more particularly, to a method for surface treatment of a substrate, including: preparing a substrate on which a fine wiring is to be formed; and treating the surface of the substrate with a fluorine containing liquid having a low boiling point, and a method for forming fine wiring using the same method. According to the present invention, not only the spreading of ink droplets but also the deterioration of the interface adhesion is avoided.

Abstract: This invention provides a manufacturing method of a molded glass object in which generation of defects such as dents and wrinkles due to catching of ambient gas between a molten glass drop and an upper mold is restrained in the case of manufacturing a molded glass object by press-molding of a dropped molten glass drop, and a manufacturing method of an upper mold for the manufacturing method of a molded grass object. A molten glass drop is press-molded by use of an upper mold having been subjected to a roughening treatment to roughen the surface on the molding surface to compress the molten glass drop.

Abstract: By steps of forming first masks 13, 14 each having a first pattern on a first surface of a substrate 11 on which a membrane is to be formed, etching the first surface of the substrate 11 by using the first masks 13, 14 to forming first support beams 15, positioning a second surface of the substrate 11 on the basis of the first pattern on the first surface, forming a second mask 17 having a second pattern on the second surface of the substrate 11 based on the alignment and etching the second surface of the substrate 11 in dry by using the second mask 17 to form the second support beams 20, a membrane member 22a where the first and second support beams 15, 20 are formed on both surfaces of the membrane 12 is manufactured. Consequently, it is possible to provide the membrane member that is sufficient in strength and is hard to be deformed by heat.

Abstract: The present invention relates to a method of fabricating a nanogap and a nanogap sensor, and to a nanogap and a nanogap sensor fabricated using the method. The present invention relates to a method of fabricating a nanogap and a nanogap sensor, which can be realized by an anisotropic etching using a semiconductor manufacturing process. According to the method of present invention, the nanogap and nanogap sensor can be simply and cheaply produced in large quantities.

Abstract: A method of forming an aligned connection between a nanotube layer and an etched feature is disclosed. An etched feature is formed having a top and a side and optionally a notched feature at the top. A patterned nanotube layer is formed such that the nanotube layer contacts portions of the side and overlaps a portion of the top of the etched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.

Abstract: First radicals and second radicals are simultaneous deposited into a space defined by two adjacent lines of photoresists and an underlying layer. A portion of the first radicals and the second radicals combine to form a polymer layer on the layer in the center of the space, and substantially simultaneously, another portion of thee first radicals remove the underlying layer near the base of the photoresists. The first radicals may be fluorine-rich and the second radicals may be carbon-rich.

Abstract: A process for etching a thick aluminum contact layer of a semiconductor wafer comprises the formation of a wet etch photoresist mask and the opening of a window in the mask, followed by a wet etch of a first portion of the thickness of the contact layer exposed by the window and the inherent under cutting of the contact layer under the mask window. A dry etch is next carried out, using the same window as a mask, to cut the remaining web of the contact layer under the window. An etch stop layer of Ti or TiN can be formed within the body of the contact layer to define the depth of the initial wet etch into the contact layer.

Abstract: A method for etching an AlTiC workpiece comprises forming a copper mask layer on the AlTiC, lithographically patterning said copper mask layer to thereby expose portions of the AlTiC, reactive ion etching the AlTiC using a process gas comprising argon and fluorine, and removing the mask layer. The walls of the portions of the AlTiC covered by the copper mask layer are vertical, even when etching is to a substantial depth.

Abstract: The invention relates to a method for removing an area of a layer of a component consisting of metal or a metal compound. According to prior art, corrosion products of a component are removed in a first step by applying a molten mass or by heating in a voluminous powder bed. This requires high temperatures or a large amount of space. The inventive method for removing corrosion products of a component is characterized in that a cleaning agent is applied locally, which removes the corrosion products by means of a gaseous reaction product.

Abstract: Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition sources that may be used for calibrating a plasma process. The selective-redeposition sources are constructed to promote the redeposition of a controllable and/or measurable amount of material during the plasma process.

Abstract: An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the etchant into contact with at least one metal selected from nickel, chromium, nickel-chromium alloys, and palladium. Another etching method of the present invention includes bringing a first etchant that includes an aqueous solution containing at least the following components A to C (A. hydrochloric acid; B. at least one compound selected from the following (a) to (c): (a) compounds with 7 or less carbon atoms, containing a sulfur atom(s) and at least one group selected from an amino group, an imino group, a carboxyl group, a carbonyl group, and a hydroxyl group; (b) thiazole; and (c) thiazole compounds; and C.

Abstract: A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.

Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Abstract: An etching process is described. A material layer having a bottom anti-reflection coating (BARC) and a patterned photoresist layer thereon is provided. An etching step is performed to the BARC using the patterned photoresist layer as a mask. A cleaning step is performed to remove the polymer formed on the surface of the patterned photoresist layer. Thereafter, another etching step is performed to the material layer using the patterned photoresist layer as a mask.

Abstract: A method of fabricating a plurality of nozzle arrangements for an inkjet printhead chip includes fabricating drive circuitry layers on a substrate with a CMOS fabrication process; depositing a first sacrificial layer on the substrate; depositing a heater layer for forming one or more heating circuits on the first sacrificial layer and etching the heater layer to form the heating circuits; depositing a resiliently flexible layer of dielectric material on the substrate to cover the heater layer and etching the dielectric layer to form one or more actuators and one or more ink ejection members; depositing a second sacrificial layer on the substrate to cover the actuators and the ink ejection members and etching the sacrificial layer to define deposition zones for one or more nozzle chamber walls and one or more roof walls; depositing a layer of a structural material on the second sacrificial layer to form the nozzle chamber walls and the roof walls; and etching away the sacrificial layers.

Abstract: A manufacturing method of an MR thin-film magnetic head with an MR film and lead conductors overlapping each other, includes a step of depositing a conductor layer on at least the magnetoresistive effect film, a step of forming a cap layer patterned on the deposited conductor layer, and a step of dry-etching the deposited conductor layer through a mask of the patterned cap layer using an Ar gas and an O2 gas, an O2 gas or a N2 gas so as to pattern the deposited conductor film to form the lead conductors.

Abstract: The invention relates to a method for removing an area of a layer of a component consisting of metal or a metal compound. According to prior art, corrosion products of a component are removed in a first step by applying a molten mass or by heating in a voluminous powder bed. This requires high temperatures or a large amount of space. The inventive method for removing corrosion products of a component is characterized in that a cleaning agent is applied locally, which removes the corrosion products by means of a gaseous reaction product.

Abstract: A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.

Abstract: An integrated etch process, for example as used for etching an anti-reflection layer and an underlying aluminum layer, in which the chamber wall polymerization is controlled by coating polymer onto the sidewall by a plasma deposition process prior to inserting the wafer into the chamber, etching the structure, and after removing the wafer from the chamber, plasma cleaning the polymer from the chamber wall. The process is process is particularly useful when the etching is performed in a multi-step process and the polymer is used for passivating the etched structure, for example, a sidewall in an etched structure and in which the first etching step deposits polymer and the second etching step removes polymer. The controlled polymerization eliminates interactions of the etching with the chamber wall material, produces repeatable results between wafers, and eliminates in the etching plasma instabilities associated with changing wall conditions.

Abstract: A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semiconductor. The ultraviolet rays cause a reaction of oxygen molecules to form stimulated oxygen atoms having a strong oxidative power at the surface.

Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with the underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than the aluminum compound without said short reducing amount of alloy metal.

Abstract: The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.

Abstract: This invention relates to a method of oxide hardmask aluminum etching in metal dry etch processors. It consists of two steps: the step of dry etching an aluminum interconnect stack by using an etch gas composed mainly of boron trichloride/chlorine/fluoroform/nitrogen, and the step of removing etch remnants by using a vapor plasma. The function of the etch gas is to etch the aluminum interconnection pattern in the semi-conductor, and the function of the water vapor plasma is to prevent the corrosion of a chip during the process of removing etch remnants, which will further reduce water rinsing and solution cleaning as in conventional practice, of water rinsing and solution cleaning after removal of photoresist.

Abstract: A method of forming an electrode for a surface acoustic wave (SAW) device comprises the steps of forming an alloy film (32) made of aluminum (Al) and magnesium (Mg) on a substrate (31) and selectively etching the alloy film (32) by using a gaseous mixture composed of BCl3, Cl2, and N2 to form the electrode such that the electrode has at least one sidewall polymer film (33). The method controls the production of hillocks and voids to provide high withstand voltage.

Abstract: In order to clean a semiconductor device having a dielectric layer deposited on a top surface of a lower metal wiring of the semiconductor device, and a contact hole or a via hole formed in the dielectric layer to expose the lower metal line therethrough, the semiconductor device is located within a radio frequency (RF) cleaning chamber. A gas mixture of HCl and H2O is introduced into the RF cleaning chamber and Ar gas plasma is generated in the RF cleaning chamber to excite HCl gas so that the HCl gas and an excited HCl gas are used to remove carbon radicals and metal particles.

Abstract: A method of surface treatment of friction members includes providing a friction member made of PMMC material. A transfer layer is formed on the active surface of the friction member of removing the top layer of the matrix material to expose a surface with the embedded reinforcing particles.

Abstract: A serialization process presents an efficient method of creating serial numbers on a ceramic-like semiconductor wafer by forming a non-rigid photomask that incorporates character specifications for the serial numbers. The non-rigid photomask is retained in a rigid, optically transparent photomask holder that enables the photomask to be handled as a rigid structure. Upon preparation of the wafer, the serial numbers are created onto wafer dies using a combined process involving photolithography, and a reactive ion etching process with a selective etch rate. The serialization process enables a rapid creation of serial numbers, with the selective RIE process substantially increasing the optical contrast of the characters without the need for deep trenches and without generation of excessive debris.

Abstract: Self-organized, or self-assembled, nanowires of a first composition may be used as an etching mask for fabrication of nanowires of a second composition. The method for forming such nanowires comprises: (a) providing an etchable layer of the second composition and having a buried insulating layer beneath a major surface thereof; (b) growing self-assembled nanowires on the surface of the etchable layer; and (c) etching the etchable layer anisotropically down to the insulating layer, using the self-assembled nanowires as a mask. The self-assembled nanowires may be removed or left. In either event, nanowires of the second composition are formed. The method enables the formation of one-dimensional crystalline nanowires with widths and heights at the nanometer scale, and lengths at the micrometer scale, which are aligned along certain crystallographic directions with high crystal quality.