Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.

Abstract: A method for superfinishing a high density carbide steel component using chemically accelerated finishing is provided. The high density carbide steel component is vibrated in a vessel containing a plurality of media, with active chemistry being added to the vessel at a low flow rate. An active chemistry composition is also provided, consisting of one or more conversion coating agents having preferably a phosphate radical, and one or more chelating agents preferably including citric acid.

Abstract: Porous track membranes are produced by exposing a polymeric film to a bombardment of heavy ions to provide the film with a track density, and etching pores into the resulting tracked film with an etching solution to provide the film with a density of the pores corresponding to the track density under conditions to maintain turbulent flow. An alkaline etching solution is used that contains salts of alkali metals in sufficient concentration to increase the boiling point of the resulting alkali-metal-containing solution to temperatures in excess of about 100 up to about 150° C.

Abstract: This invention provides a pattern reversal process for self aligned imprint lithography (SAIL). The method includes providing a substrate and depositing at least one layer of material upon the substrate. A pattern is then established upon the layer of material, the pattern providing at least one exposed area and at least one covered area of the layer of material. The exposed areas are treated to toughen the material and reverse the pattern. Subsequent etching removes the un-toughened material. A thin-film transistor device provided by the pattern reversal process is also provided.

Abstract: According to the present invention, a plasma treatment process is performed for a surface of a metal film exposed through a resin layer, including a foreign resin substance attached to the surface, so that the foreign resin substance can be roughened without substantially damaging the resin layer; and the entire exposed surface of the metal film is etched, using a spray etching method for which an etching fluid is ejected through a nozzle, and the foreign resin substance is removed from the exposed surface.

Abstract: The invention concerns article having a surface oxide layer up to 20 nm thick, the surface oxide layer comprising chromium and cobalt oxides where the atomic ratio of Cr/Co is more than 3. The invention also concerns methods for treating a chromium containing material, said method comprising contacting said material with a gas plasma under conditions effective to oxidize at least a portion of the material; and contacting said material with an acid. The treated surface is corrosion resistant and can be used in orthopedic implants, especially the wear surface of the orthopedic implant to reduce wear, and other corrosive environment.

Abstract: A contact is defined by an opening etched into borophosphosilicate glass (BPSG) down to a silicon substrate. In a contact cleaning process designed to remove native oxide at the bottom of the contact with little effect on the BPSG, the contact is dipped in an etch retardant before being dipped in a cleaning solution containing both the etch retardant and an etchant. The dip in etch retardant modifies the surface of the BPSG, thereby lessening the enhanced etching experienced during the initiation of the dip into the etchant/etch retardant cleaning solution. Results of a etchant/etch retardant clean, both with and without the prepassivation, can be illustrated on a graph depicting the change in contact diameter as a function of dip time. Specifically, the results define “best fit” lines on that graph.

Abstract: A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an opening being formed on a one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from said opening on said one surface, from said one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from said one surface through the opening of the etching mask layer.

Abstract: A composite element comprising a thin film that consists of at least two layers of an oxide-ceramic and metallic material, or a metallic material and an essentially flat substrate that supports the thin film. Said substrate is composed of a ceramicizable glass, a glass ceramic, a hybrid form or an intermediate product. To produce the substrate, selected regions are dissolved out of the photostructurable glass substrate. The composite element can be successfully used in a miniaturised electrochemical device, in particular in a solid oxide fuel cell SOFC, a sensor or as a gas separation membrane.

Abstract: A method of producing a highly etched electrode for a capacitor from a foil is disclosed. The method comprises first applying a laser beam to the foil to form a plurality of marks on the foil surface and then etching the foil. Preferably, the laser marks facilitate etching of foil surface in areas near the marks and retard etching of foil surface inside the marks. After etching, the foil is further processed in a combination of optional steps such as forming and finishing steps. The laser marking of the foil allows for positional control of tunnel initiation, such that tunnel initiation density and the location of tunnel initiation is controlled. By controlling the position of tunnel initiation, foils are etched more uniformly and have optimum tunnel distributions, thus allows for the production of highly etched foils that maintain high strength and have high capacitance.

Abstract: In order to form a more homogenous heat generating resistive layer, the present invention provides a method of manufacturing a substrate for an ink jet recording head having a support which has an insulative layer on its surface, a pair of electrode layers disposed on the surface of the support, and a heat generating resistive layer which continuously covers the pair of electrode layers and a section between the pair of electrode layers. The method includes the step of forming an electrode layer on the support and the step of forming the pair of electrode layers by etching the electrode layer. In the step of forming the pair of electrode layers by etching the electrode layer, by etching a surface portion of the insulative layer positioned between the pair of insulative layers, a recess is formed in the surface portion of the insulative layer.

Abstract: This invention provides an inexpensive and rapid method for fabricating a high-anisotropic-etch ratio, shaped glass structures using a novel photosensitive glass composition. Structures of the photosensitive glass may include micro-channels, micro-optics, microposts, or arrays of hollow micro-needles. Furthermore, such shaped glass structures can be used to form a negative mold for casting the shape in other materials.

Abstract: The invention concerns a method which consists in first subjecting the polyimide sheet to ionic bombardment, followed by an irradiation in the visible domain and finally a relatively brief chemical etching. Said method enables a thin polyimide sheet comprising pores, of nanometric to micrometric size, having a substantially cylindrical shape and substantially equal diameters to be obtained.

Abstract: A method for forming a ring pattern is disclosed. The ring pattern has a first wall and a second wall. The method includes the following steps: (a) providing a substrate; (b) forming a dielectric layer on the substrate; (c) forming a first patterned photoresist layer on the dielectric layer, the first patterned photoresist layer defining the first wall; (d) etching the dielectric layer to a predetermined depth by using the first patterned photoresist as a mask, and then removing the first patterned photoresist layer; (e) forming a second patterned photoresist layer on the dielectric layer, the second patterned photoresist layer defining the second wall; (f) etching the dielectric layer by using the second patterned photoresist layer as a mask so as to form the ring pattern having the first wall and the second wall.

Abstract: A directed energy source is applied to a portion of a material, creating at least one altered region and leaving at least one unaltered region. The material is exposed to an etchant which removes the at least one altered region leaving substantially all of the unaltered region.

Abstract: Composition and a process using the composition for selectively wet etching metal including depositing metal on a silicon surface; applying energy to cause respective portions of the metal and silicon to form silicide, leaving a quantity of unreacted metal; selectively wet etching the unreacted metal by applying to the unreacted metal a composition including HCl, HBr, an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; a stabilizer for the nitrogen oxide, comprising a glycol, a glyme, an ether, a polyol or a mixture of any two or more thereof; and water. In one embodiment, the composition includes an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; and water.

Abstract: We disclose methods of sorting or separating mixtures of living cells (e.g., eukaryotic, prokaryotic, mammalian, pathogenic, bacterial, viral, etc.). We perform our methods by activating cell-selective photophoric labels, which photosensitize and chemically reduce a photosensitive metal compound to form metal grains, particles or crystals. The metal adheres to the cells and forms the basis for sorting or separating different cell types. Photophoric labels may include chemiluminescent agents such as peroxidase enzymes activated with peroxidase substrates capable of luminescence. Photosensitive metal compounds may be present in a light-sensitive matrix or emulsion containing photosensitizable metal compounds, which form metal grains, particles or crystals upon exposure to a developer solution. Developer solutions are formulated to substantially allow living cells to remain viable after exposure to the developing solution.

Abstract: A wet etching apparatus and method to shorten processing time and to eliminate formation of unintended mask pattern are described. In the conventional art, after a mask pattern is formed, alien substances such as water mist or stain are left on the substrate. The alien substances act as an etching block in the wet etching process. This generates an unintended mask pattern. The present invention uses ultraviolet light to remove the alien substances prior to the etching process. When the alien substances are removed, the intended mask pattern is generated after the etching process. The wet etching device according to the present invention includes an ultraviolet cleaner and a conveyor to convey substrates to and from the ultraviolet cleaner. Spaces for the ultraviolet cleaner and the conveyor are created in the wet etching apparatus by reducing space for cassettes and reducing space required by the loader.

Abstract: A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid after the heat treatment of the oxide layer.

Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

Abstract: A method for selectively dissolving the beta (?) phase of a titanium alloy out of the surface of the alloy, thereby leaving behind a nano-scale porous surface having enhanced bonding properties with either a biological tissue, such as bone, or an adhesive material, such as a polymer or ceramic by immersing the alloy in an ionic aqueous solution containing high levels of hydrogen peroxide and then exposing the alloy to an electrochemical voltage process resulting in the selective dissolution of the beta phase to form a nano-topographic metallic surface.

Abstract: The present invention illustrates a bulk silicon etching technique that yields straight sidewalls, through wafer structures in very short times using standard silicon wet etching techniques. The method of the present invention employs selective porous silicon formation and dissolution to create high aspect ratio structures with straight sidewalls for through wafer MEMS processing.

Abstract: A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams each addressing independently selectable mutually set apart locations on the substrate to induce a reaction between the substrate and the reactant.

Abstract: The invention relates to a method for forming silicon atomic force microscope tips. The method includes the steps of depositing a masking layer onto a first layer of doped silicon so that some square or rectangular areas of the first layer of doped silicon are not covered by the masking layer, etching pyramidal apertures in the first layer of doped silicon, removing the masking layer, depositing a second layer of doped silicon onto the first layer of doped silicon, the second layer of doped silicon being oppositely doped to the first layer of doped silicon and etching away the first layer of doped silicon. Further steps may be added to form the atomic force microscope tips at the end of cantilevers.

Abstract: A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom portion of the lateral strengthening structure, and a part of the substrate by an etching process so as to form a lower structure and expose an unstrengthened structure; and (f) etching the unstrengthened structure laterally so as to form an upper structure.

Abstract: A method of forming a planarized layer on a substrate, where the substrate is cleaned, and the layer is formed having a surface with high portions and low portions. A resistive mask is formed over the low portions of the layer, but not over the high portions of the layer. The surface of the layer is etched, where the high portions of the layer are exposed to the etch, but the low portions of the layer underlying the resistive mask are not exposed to the etch. The etch of the surface of the layer is continued until the high portions of the layer are at substantially the same level as the low portions of the layer, thereby providing an initial planarization of the surface of the layer. The resistive mask is removed from the surface of the layer, and all of the surface of the layer is planarized to provide a planarized layer.

Abstract: Methods suitable for use in making a write coil of a magnetic head includes the steps of forming a seed layer made of ruthenium (Ru) over a substrate; forming, over the seed layer, a patterned resist having a plurality of write coil trenches patterned therein; electroplating electrically conductive materials within the plurality of write coil trenches to thereby form a plurality of write coil layers; removing the patterned resist; and performing a reactive ion etch (RIE) in ozone gas (O3) for removing exposed seed layer materials in between the plurality of write coil layers. Advantageously, the write coil layers remain undamaged from the RIE in the ozone gas. Other structures may be fabricated in a similar manner.

Abstract: A method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution. The etching solution comprises, in percent, 20% to 55% water, 10% to 40% concentrated hydrofluoric acid and 20% to 60% concentrated nitric acid and the temperature of the etching solution is between 0 and 15 degrees Celsius.

Abstract: An apparatus for cutting at least one thin layer from a substrate or ingot forming element for an electronic or optoelectronic or optical component or sensor. This apparatus includes a device for directing a pulse of energy into the substrate or forming element wherein the pulse has a duration shorter than or of the same order as that needed by a sound wave to pass through the thickness of the weakened zone, and the energy of the pulse is sufficient to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein. The apparatus also includes an assembly for holding or orienting the substrate or ingot forming element so that the energy pulse is completely uniformly directed over the entire surface, through the face and into the substrate or ingot forming element to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein.

Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

Abstract: The invention relates to a method for removing an area of a layer of a component consisting of metal or a metal compound. According to prior art, corrosion products of a component are removed in a first step by applying a molten mass or by heating in a voluminous powder bed. This requires high temperatures or a large amount of space. The inventive method for removing corrosion products of a component is characterized in that a cleaning agent is applied locally, which removes the corrosion products by means of a gaseous reaction product.

Abstract: An inexpensive and rapid method for fabricating arrays of hollow microneedles uses a photoetchable glass. Furthermore, the glass hollow microneedle array can be used to form a negative mold for replicating microneedles in biocompatible polymers or metals. These microneedle arrays can be used to extract fluids from plants or animals. Glucose transport through these hollow microneedles arrays has been found to be orders of magnitude more rapid than natural diffusion.

Abstract: In an apparatus for etching a glass substrate according to the present invention, impurities that are attached to the surface of a glass substrate, which are formed by assembling a color filter substrate and a TFT substrate provided in the etching bath filled with etchant, are removed by using ultrasonic oscillation generated from an ultrasonic oscillator, by which a glass substrate having uniform thickness and surface is obtained.

Abstract: A method for fabricating a stent or other medical device by creating a free standing thin film of metal.

Abstract: Methods are provided for making microfilters by subtractive techniques which remove a component or part of a filter material to form pores in the filter material and additive techniques which deposit a filter material onto a porous underlying substrate. All the methods employ a supercritical fluid or mixture which have very high solvency properties and low viscosity and CO2 is the preferred supercritical fluid.

Abstract: A method of selectively etching a substrate (1) comprises applying etchant (4) at a surface of the substrate and illuminating an area of the surface with light from a light source (7), whereby etching is at least partially inhibited in the illuminated area (18) of the substrate. Preferably LiNbO3 is patterned in HF KOH, or HF?HNO3 solutions by selective illumination using UV laser light with 300 to 1000 mn wavelength, thereby allowing for interferometric or holographic structures to be formed.

Abstract: A method for anisotropically and selectively removing a dielectric thin film layer from a substrate layer is disclosed, wherein the dielectric layer is subjected to ion implantation prior to wet etching. This method may be applied adjacent to a structure such as a gate electrode within a microelectronic structure to prevent undercutting of the dielectric material to be preserved between the gate electrode and the substrate layer, as may happen with more isotropic etching techniques.

Abstract: A sub-micron structure is fabricated in a transparent dielectric material by focusing femtosecond laser pulses into the dielectric to create a highly tapered modified zone with modified etch properties. The dielectric material is then selectively etched into the modified zone from the direction of the narrow end of the tapered zone so that as the selective etching proceeds longitudinally into the modified zone, the progressively increasing width of the modified zone compensates for lateral etching occurring closer to the narrow end so as to produce steep-walled holes. The unetched portion of the modified zone produced by translating the laser beam close to and parallel to the bottom surface of the dielectric can serve as an optical waveguide to collect light from or deliver light to the etched channel which can contain various biological, optical, or chemical materials for sensing applications.

Abstract: A method of forming a planarized layer on a substrate, where the substrate is cleaned, and the layer is formed having a surface with high portions and low portions. A resistive mask is formed over the low portions of the layer, but not over the high portions of the layer. The surface of the layer is etched, where the high portions of the layer are exposed to the etch, but the low portions of the layer underlying the resistive mask are not exposed to the etch. The etch of the surface of the layer is continued until the high portions of the layer are at substantially the same level as the low portions of the layer, thereby providing an initial planarization of the surface of the layer. The resistive mask is removed from the surface of the layer, and all of the surface of the layer is planarized to provide a planarized layer.

Abstract: A method is described for fabricating multiple nanowires of uniform length from a single precursor nucleation particle. The method includes growing a first nanowire segment from a nanoparticle and growing a second nanowire segment between the first nanowire segment and the nanoparticle. The first nanowire segment and the second nanowire segment have a different solubility.

Abstract: The invention is an improvement in the metal finishing processes disclosed in U.S. Pat. No. 4,818,333. The improvement arises in the use of nonabrasive media, such as stainless steel or plastic, in combination with chemicals that are reactive to the metal surface processed. The invention also includes metal articles finished using this process.

Abstract: A method of forming a microporous fluoropolymer membrane, comprising the steps of: irradiating a sheet of fluoropolymer at a dosage level below the rupture energy of the carbon-to-fluorine (C—F) bonds of the fluoropolymer, but sufficient to rupture carbon-to-carbon (C—C) bonds; and exposing the sheet of fluoropolymer to an etchant for a period of time sufficient to etch away disrupted atoms and molecules, wherein continuous micropassages are formed through the sheet.

Abstract: A Focused Ion Beam (FIB) milling end-point detection system uses a constant current power supply to energize an Integrated Circuit (IC) that is to be modified. The FIB is cycled over a conductive trace that is to be accessed during the milling process. The input power, or voltage to the IC is monitored during the milling process. The end-point can be detected when the FIB reaches the conductive trace. The FIB can inject charge onto the conductive trace when the FIB reaches the level of the conductive trace. An active device coupled to the conductive trace can amplify the charge injected by the FIB. The active device can operate as a current amplifier. The change in IC current can result in an amplified change in device input voltage. The end-point can be detected by monitoring the change in input voltage from the constant current power supply.

Abstract: A laser direct write method creates true three dimensional structures within photocerams using an focused pulsed ultraviolet laser with a wavelength in a weakly absorbing region of the photoceram material. A critical dose of focused laser UV light selectively exposes embedded volumes of the material for subsequent selective etching. The photoceram material exposure is nonlinear with the laser fluence and the critical dose depends on the square of the per shot fluence and the number of pulses. The laser light is focused to a focal depth for selective volumetric exposure of the material within a focal volume within the remaining collateral volumes that is critically dosed for selecting etching and batch fabrication of highly defined embedded structures.

Abstract: The invention relates to a sheet material having metal points (8) and surfaces (2 and 3) located opposite one another, wherein the sheet material (1) has through-holes (4) from one surface (2) to the surface (3) located opposite. Those through-holes (4) are filled with needle-point-shaped conical pins (5) or through-contacts (6) of electrically conducting material, whereas the surrounding sheet material in a preferred embodiment of the invention consists of an insulating plastics material (7). In a further embodiment of the invention, instead of the insulating plastics material (7) there are provided needle-shaped pins that are surrounded by air or some other gaseous medium. The invention further relates to a method for the production of such a sheet material (1) and to forms of use of the sheet material (1).

Abstract: A method for reducing the density of sites on the surface of fused silica optics that are prone to the initiation of laser-induced damage, resulting in optics which have far fewer catastrophic defects, and are better capable of resisting optical deterioration upon exposure to a high-power laser beam.

Abstract: A method for producing a liquid discharge head provided with a discharge port for discharging liquid, a liquid flow path communicating with the discharge port, and a silicon substrate including a discharge energy generating element for generating energy for liquid discharge and a liquid supply aperture for supplying the liquid flow path with the liquid, the method comprising following steps of: forming an anisotropic etching stop layer in a portion wherein the liquid supply apertures is to be formed on the top side of the substrate; forming an insulation layer on the anisotropic etching stop layer; destructing the crystalline structure under the etching stop layer in the liquid supply aperture forming portion utilizing the insulation layer as a mask, forming, on the rear side of the substrate, an etching mask layer having an aperture corresponding to the liquid supply aperture forming portion on the top side, etching the substrate by anisotropic etching from the aperture until the area where the crystalline s

Abstract: A planarized conductive material is formed over a substrate including narrow and wide features. The conductive material is formed through a succession of deposition processes. A first deposition process forms a first layer of the conductive material that fills the narrow features and at least partially fills the wide features. A second deposition process forms a second layer of the conductive material within cavities in the first layer. A flexible material can reduce a thickness of the first layer above the substrate while delivering a solution to the cavities to form the second layer therein. The flexible material can be a porous membrane attached to a pressurizable reservoir filled with the solution. The flexible material can also be a poromeric material wetted with the solution.

Abstract: The invention relates to a method of creating pores in a polymer material in sheet form or a polymer layer such as a thin film with a thickness equal to around 100 nanometers, previously deposited on a metallic base. The invention further relates to a method of creating pores in a polymer material in sheet form, such as polycarbonate or any other equivalent material, the said method making it possible to obtain porous areas with controllable sizes and shapes, these areas being distributed according to densities and locations which can also be controlled.

Abstract: A method for producing a magnetic transducer with a inductive write head having a multilayer coil with a high aspect ratio and a short yoke is provided. A damascene process is used for two coil layers and a conventional process for the third coil layer. The process of the invention allows a seed layer for the coil to be deposited on the side walls of the trenches for the first and second coil layers. In one embodiment the seed layer for the coil is preceded by an adhesion layer.