Abstract: In accordance with said control method, the transmission of the laser beam is periodically interrupted with the aid of means for masking the laser beam placed between the reference point and a source of the laser beam. Moreover, the transmission power of the source of the laser beam is varied between the minimum and maximum values, such that the emission times of the source of the laser beam at the minimum power substantially coincide with the masking times of the laser beam via the masking means. Preferably, the minimum value is at least equal to 10% and the maximum value at most equal to 90% of a maximum emission power of the source of the laser beam.

Abstract: A lid (2) for closing a cup (1) along a peripheral sealing edge (10) and a method for producing such a lid. The lid includes at least one aluminum film and an optionally multi-layered plastic layer which is co-extruded onto the aluminum film and has a closed predetermined tearing line (3). The plastic layer is made of plastic based on polyethylene (PE) or plastic based on polypropylene (PP), and the predetermined tearing line is introduced into the plastic layer preferably by means of a CO2 laser. The predetermined tearing line (3) may be provided directly in the region of the sealing edge (10).

Abstract: An apparatus for fabricating patterns using a laser diode is presented. The apparatus includes at least one laser diode, at least one lens and a mask having at least one pin hole, wherein light emitted from the laser diode is emitted through the lens and the pin hole to be focused on a first material layer.

Abstract: In a particular embodiment, a relatively high-energy thulium fiber laser operating at the wavelength ?=2 ?m may be used to selectively modify a front and/or a back surface of silicon and gallium arsenide wafers. The processing regime was studied in terms of the process parameters variation, and the corresponding modification fluence thresholds were determined. The results revealed considerable differences in morphology between front and back surface modifications, and that the back surface modification threshold of Si is significantly higher than at the front surface. Basic analytic modeling and z-scan measurements were performed to study the absorption mechanisms. In a broader embodiment the processing regime is not specifically limited to a thulium fiber laser.

Abstract: The invention concerns a device for heating an object (6) in an intense magnetic field, comprising:—a light source (1), an optic fibre (2) for transporting the light emitted by said light source (1) and emitting a beam of light in the direction of the object (6) to be heated, a converging optical system (3), a diaphragm (4) positioned at the focusing point of the optical system (3),—a reflector (5), whereof the inner wall is defined by the revolution of a semi-parabola around an axis perpendicular to the optical axis of the parabola and passing through the focal point of said parabola, the optical axis of said reflector (5) coinciding with the optical axis (A) of the optical system (3) and the focal point (F?) of said reflector coinciding with the focusing point of said optical system (3).

Abstract: A laser welding head capable of producing a plurality of beams that are proficient in providing a unique keyhole. The welding head is movable through a plurality of positions relative to substrates that enables the plurality of beams to engage the substrates in a manner that welds the substrates in a variety of stack-up positions. A welding method using the welding head is also provided.

Abstract: A laser welding apparatus includes a laser welding unit including a first lens adapted to focus a laser beam; a second lens adapted to diffuse the laser beam to the first lens; and a third lens adapted to guide the laser beam to the second lens. The relative positions of the first lens, the second lens, and the third lens, are adjusted to adjust a diffusion angle and a beam width of the laser beam entering the first lens. The laser welding apparatus performs: actuating the laser welding unit to travel at a predetermined speed along a predetermined trajectory; directing the laser beam at a first welding spot; adjusting the focal length to focus the laser beam at the first welding spot; holding the laser focal spot size substantially constant; and directing the laser beam at a second welding spot after completion of welding for the first welding spot.

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

Abstract: According to example embodiments, a laser optical system includes a laser generator, at least one scan module, an objective lens, a relay lens, a review optical system, and a control device. The laser generator is configured to generate a laser beam. The at least one scan module is configured to reflect the laser beam generated by the laser generator and to direct the laser beam in different directions. The objective lens is configured to focus the laser beam on a substrate. The relay lens is configured to guide the laser beam scanned by the at least one scan module to within an incident range of the objective lens. The review optical system is configured to monitor, in real time, repair of the substrate using the laser beam. The control device is configured to control the at least one scan module.

Abstract: Device for processing a substrate are described herein. Devices can include a radiation source and an aperture positioned to receive radiant energy from the radiation source. The aperture can include one or more members, and one or more interfering areas, wherein the interfering areas surround a transmissive area. The one or more structures can affect transmission of radiant energy through a portion of the transmissive area of the aperture. Structures disposed on the aperture can reduce or redirect transmission to provide for more uniform overall transmission of radiant energy through the aperture.

Abstract: Laser pulses from pulsed fiber lasers are directed to an amorphous silicon layer to produce a polysilicon layer comprising a disordered arrangement of crystalline regions by repeated melting and recrystallization. Laser pulse durations of about 0.5 to 5 ns at wavelength range between about 500 nm and 1000 nm, at repetition rates of 10 kHz to 10 MHz can be used. Line beam intensity uniformity can be improved by spectrally broadening the laser pulses by Raman scattering in a multimode fiber or by applying varying phase delays to different portions of a beam formed with the laser pulses to reduce beam coherence.

Abstract: An optical transmitting unit transmits a pulsed laser beam oscillated by a pulsed laser beam oscillator to a focusing unit in a laser processing apparatus. A wavelength band expanding unit expands the wavelength band of the pulsed laser beam, and a pulse width expanding unit increases the pulse width of the expanded pulsed laser beam. A focusing lens focuses the expanded pulsed laser beam. An optical fiber transmits the focused pulsed laser beam through a collimating lens and a pulse width compressing unit compresses the pulse width of the collimated pulsed laser beam to restore the original pulse width for transmission.

Abstract: An apparatus 101 for singulating an object is disclosed. The apparatus 101 comprises a laser 103 configured to emit a laser beam 105 with a Gaussian irradiance profile, as well as a beam-shaping device 115 configured to reshape the Gaussian irradiance profile of the laser beam 105 emitted from the laser 103. In particular, the beam-shaping device 115 has a plurality of aspherical lenses 117, 119 to redistribute irradiance of the laser beam 105, so as to reduce variation of the irradiance in an effective irradiation spectrum of the laser beam 105 for singulating the object. By redistributing the irradiance of the laser beam 105, irradiation energy may be more efficiently delivered to the semiconductor wafer 102 for laser singulation, compared with conventional laser beams with Gaussian irradiance profiles which are non-uniform. A method of singulating an object is also disclosed.

Abstract: In order to separate a material layer from a substrate at the boundary face between the substrate and the material layer, a laser light is applied to a workpiece from the substrate side through a mask, the work having the material layer formed on the substrate. The laser beam is split into a plurality of small area laser light by the mask 44, and two or more irradiation regions are formed on the workpiece. Adjacent irradiation regions are separated from each other, and an edge part of each irradiation region and an edge part of an adjacent irradiation region, which extend in a direction parallel to the relative moving direction of the workpiece, are arranged such that the edge of the irradiation region and the edge of the adjacent irradiation region are sequentially overlapped each other as the work is moved.

Abstract: The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.

Abstract: A positioning device of the type described characterised by the incorporation of the puck into a closed circuit gas system from which the puck establishes the flow of fluid to provide the fluid cushion. Typically the positioning device is characterised by the provision of a heat transfer mechanism incorporated in the closed circuit to provide for heat exchange between the heat transfer mechanism and gas flowing around the system. The puck is coupled to a lens and a mask to provide for close following of a surface of a work-piece so as to keep a magnified image of the mask stable; the combination of puck, lens and mask forming a unit counterbalanced by a counterweight acting to provide for adjustment of focus of the laser beam relative to the surface of the work-piece.

Abstract: Temporal focusing of spatially chirped femtosecond laser pulses overcomes previous limitations for ablating high aspect ratio features with low numerical aperture (NA) beams. Simultaneous spatial and temporal focusing reduces nonlinear interactions, such as self-focusing, prior to the focal plane so that deep (˜1 mm) features with parallel sidewalls are ablated at high material removal rates.

Abstract: A laser energy delivery system includes a relay imaging system. Input optics arranged to receive the laser energy, a transmitting mirror having adjustable angle of incidence relative to the input optics, and a robot mounted optical assembly are configured to direct laser energy toward the movable target image plane. The laser energy follows an optical path including an essentially straight segment from the transmitting mirror to the receiving mirror, having a variable length and a variable angle relative to the input optics through air. Diagnostics on the processing head facilitate operation.

Abstract: A method and device for processing materials with laser pulses having a large spectral bandwidth and a device for carrying out said method. The aim of the invention is to create an easy, flexible method enabling universally applicable processing which can, however, be adapted to specific processing and methodological requirements. According to the invention, one or several spectral parameters of the laser pulses, i.e. the spectral amplitude and/or spectral phase and/or spectral polarization thereof, is/are specifically modified, preferably according to a measuring process variable, in order to process material or during the occurrence of said processing. The invention is used in order to process material with laser pulses having a large spectral bandwidth, particularly femto-second pulses and pico-second pulses.

Abstract: Provided is a method for manufacturing a photoelectric-conversion-device capable of controlling the groove depth of a processed groove to a desired value. The method for manufacturing a photoelectric conversion device (10) includes a groove forming step of irradiating an intermediate-contact-layer separating groove (15) constituting a photoelectric conversion device (10) with a picosecond laser and of moving the picosecond laser relative to the intermediate-contact-layer separating groove (93), thereby forming a processed groove (15) in a predetermined scanning direction. In the groove forming step, interference fringes arranged in parallel in one direction are formed in an irradiated area corresponding to a beam diameter of the picosecond laser, and the picosecond laser is relatively moved such that the interference fringes are joined in the scanning direction.

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract: A device for the exact manipulation of material, especially of organic material, includes a pulsed laser system with a radiation source, said radiation source being a cavity-dumped fs oscillator.

Abstract: A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.

Abstract: A pulse width controller for a thermal processing system is disclosed. Pulsed electromagnetic radiation is directed through a rotatable wave plate to a polarizing beam splitter, which reflects and transmits according to the phase angle of the wave plate. Radiation transmitted by the polarizing beam splitter is directed into an optical circuit that returns the radiation to the polarizing beam splitter after a transit time. A second rotatable wave plate is positioned in the optical circuit. The polarizing beam splitter reflects and transmits the returned radiation according to the phase angle of the second rotatable wave plate. A second pulse width controller may be nested in the optical circuit, and any number of pulse width controllers may be nested.

Abstract: An apparatus for thermally processing a substrate includes a first radiation source configured to heat a substrate and emit radiation at a heating wavelength, focusing optics configured to direct radiation from the first radiation source to the substrate, and a second radiation source configured to emit radiation at a second wavelength different from the heating wavelength and at a lower power than the first radiation source. Radiation from the second radiation source is directed onto the substrate. The apparatus further includes a first detector configured to receive reflected radiation at the second wavelength and a computer system configured to receive an output from the first detector and adjust a focus plane of the first radiation source relative to the substrate. The second radiation source is configured to have substantially the same focus plane as the first radiation source.

Abstract: The invention relates to a laser nozzle that can be used in laser cutting, notably with a fibre or disc laser, comprising a nozzle body comprising an axial housing passing axially through said nozzle body and comprising a first outlet orifice situated at the front face of the nozzle body, and a movable element comprising a skirt-forming front part arranged in the axial housing of the nozzle body, said movable element being capable of translational movement in the axial housing of the nozzle body and comprising an axial passage with a second outlet orifice opening onto the skirt-forming front part.

Abstract: A device for joining by a laser beam two components along a ring-shaped contact zone, where a first of the two components is transmissive for the laser beam and a second of the two components is absorptive for the laser beam. The device includes a receptacle configured to affix the absorptive component and an internal clamping chuck configured for placement on the transmissive component within an open inside area of the contact zone. The device also includes a pressure element with an open inside area that is larger than an extension of the contact zone, a laser source configured to emit the laser beam, and a rotatable holding wheel. The pressure element is connected to the internal clamping chuck via an external axial bearing, the holding wheel and an internal axial bearing so as to transmit to the internal clamping chuck contact pressure exerted on the pressure element.

Abstract: A method of preparing an apparatus for material processing by generating optical breakthroughs in an object. The apparatus includes a variable focus adjustment device. A contact element is mounted to the apparatus, the contact element has a curved contact surface having a previously known shape. The position of the contact surface is determined prior to processing the object, by focusing measurement laser radiation near or on the surface by the variable focus adjustment device, and the focus position is adjusted in a measurement surface intersecting the expected position of the contact surface. Radiation from the focus of the measurement laser radiation is confocally detected. The position of points of intersection between the measurement surface and the contact surface is determined from the confocally detected radiation to determine the position of the contact surface from the position of the points of intersection and the previously known shape of the contact surface.

Abstract: A laser processing method is disclosed, comprising the steps of: directing a laser beam to a workpiece; and effecting a relative motion between the laser beam and the workpiece. In particular, the step of directing the laser beam to the workpiece comprises focusing the laser beam within the workpiece until an internal damage forms within the workpiece and a crack propagates from the internal damage to at least one surface of the workpiece to form a surface crack on the workpiece. Further, the step of effecting the relative motion between the laser beam and the workpiece is such that the surface crack on the workpiece propagates along a line of separation on the workpiece. A laser processing apparatus is also disclosed.

Abstract: A laser dicing method of a work piece on a surface of which a metal film is provided, includes: a first metal film removing of irradiating a pulse laser beam defocused from the metal film, along a first line, and removing the metal film; a second metal film removing of irradiating the pulse laser beam defocused from the metal film, along a second line orthogonal to the first line, and removing the metal film; and a crack forming of irradiating the pulse laser beam in an area from which the metal film of the work piece is removed, and forming the crack in the work piece, and, in an area in which the first line and the second line cross, irradiation of the pulse laser beam is interrupted in the first metal film removing or the second metal film removing.

Abstract: Laser processing machines and methods for adjusting focused laser beams. Laser processing heads have nozzle with openings admitting primary laser beam. An orientation device is included, as well as at least one sensor to mutually center primary beam and opening of nozzle. A first beam handling unit is arranged near the nozzle opening and may convert primary beam into a secondary wide-band heat beam, and then may emit this secondary beam towards a sensor; or may reflect/scatter at least a portion of the primary beam towards sensor. The sensor detecting the converted secondary beam is arranged within the laser processing head. In an adjustment process, a primary beam may be converted into a wide-band heat radiation as secondary radiation at the beam handling unit, and emitted and/or diverted into a scattered/reflex beam towards the sensor.

Abstract: A laser processing system for micromachining a workpiece includes a laser source to generate laser pulses for processing a feature in a workpiece, a galvanometer-driven (galvo) subsystem to impart a first relative movement of a laser beam spot position along a processing trajectory with respect to the surface of the workpiece, and an acousto-optic deflector (AOD) subsystem to effectively widen a laser beam spot along a direction perpendicular to the processing trajectory. The AOD subsystem may include a combination of AODs and electro-optic deflectors. The AOD subsystem may vary an intensity profile of laser pulses as a function of deflection position along a dither direction to selectively shape the feature in the dither direction. The shaping may be used to intersect features on the workpiece. The AOD subsystem may also provide rastering, galvo error position correction, power modulation, and/or through-the-lens viewing of and alignment to the workpiece.

Abstract: A light irradiation device and method for irradiating converged light with an object include a light source configured to output a light, a phase-modulating spatial light modulator, a controller, and a converging optical system. The phase-modulating spatial light modulator is configured to input the light outputted from the light source and to display a hologram modulating a phase of the light at each of a plurality of pixels arranged two-dimensionally, and outputs the phase-modulated light. The controller is configured to cause the spatial light modulator to display a hologram such that the light outputted from the spatial light modulator is converged at a plurality of converging positions. The controller causes the spatial light modulator to display a first hologram and performs a feedback of the first hologram so as to modify the first hologram. The modifying of the first hologram is performed by measuring intensity of the light converged.

Abstract: An optical device includes: a beam splitter by which a laser beam emitted from an oscillator is branched into a first branch beam going ahead through transmission and a second branch beam going ahead through reflection; a first mirror by which the first branch beam going out of the beam splitter is reflected to go again toward the beam splitter; a second mirror by which the second branch beam going out of the beam splitter is reflected to go again toward the beam splitter; and a circular disk-like rotating unit for integrally rotating the first mirror and a second mirror, with a laser beam branch point in the beam splitter as a center of rotation.

Abstract: Methods and apparatus for processing edge portions of a donor semiconductor wafer include controlling chemical mechanical polishing parameters to achieve chamfering of the edges of the donor semiconductor wafer; and alternatively or additionally flexing the donor semiconductor wafer to present a concave configuration, where edge portions thereof are pronounced as compared to a central surface area thereof, such that the pronounced edge portions of the donor semiconductor wafer are preferentially polished against a polishing surface in order to achieve the chamfering.

Abstract: This invention provides two variations of methods of separating a surface layer (307) of the semi-conductor crystal (101). In the first variation of the method, a focused laser beam (102) is directed onto the crystal (101) in such a way that focus is placed in the layer separation plane (304) perpendicular to the axis (103) of said beam (102), the laser beam (102) is moved with scanning the layer separation plane (304) with focus in the direction from the open side surface of the crystal (101) deep into the crystal with forming a continuous slit width of which is increased with every pass of the laser beam (102), the previous operation is performed up to separation of the surface layer (307).

Abstract: An processing apparatus comprises a laser oscillator, an overall control device which controls an operation of the laser oscillator, and a plurality of processing units. The processing unit comprises a holding part which movably holds a processed object, an optical system which guides the laser beam, oscillated from the laser oscillator, toward the processed object, a shutter which selectively prevents the laser beam from reaching the processed object, and an individual control device which controls an operation of the holding part, and transmits a laser request signal to the overall control device. When at least one of the plurality of individual control devices transmits the request signal, the overall control device controls the shutter of the processing unit, which has transmitted the laser request signal, to enable the laser beam to reach the processed object, and drives the laser oscillator to allow the laser oscillator to oscillate the laser beam.

Abstract: A laser irradiation apparatus is provided with a laser oscillator, an articulated beam propagator in which a plurality of pipes are connected to each other in an articulated portion, and a course change means of a laser beam in the articulated portion. At least one pipe of the plurality of pipes includes a transfer lens for suppressing stagger of a laser beam in a traveling direction, in each pipe. The articulated portion produces degree of freedom in disposition of a laser oscillator, and the transfer lens enables suppression of change in beam profile.

Abstract: An improved method for laser processing that prevents material redeposition during laser ablation but allows material to be removed at a high rate. In a preferred embodiment, laser ablation is performed in a chamber filled with high pressure precursor (etchant) gas so that sample particles ejected during laser ablation will react with the precursor gas in the gas atmosphere of the sample chamber. When the ejected particles collide with precursor gas particles, the precursor is dissociated, forming a reactive component that binds the ablated material. In turn, the reaction between the reactive dissociation by-product and the ablated material forms a new, volatile compound that can be pumped away in a gaseous state rather than redepositing onto the sample.

Abstract: The present invention is to provide a laser irradiation apparatus for forming a laser beam which has a shape required for the annealing and which has homogeneous energy distribution, by providing a slit at an image-formation position of a diffractive optical element, wherein the slit has a slit opening whose length is changeable. The laser irradiation apparatus comprises a laser oscillator, a diffractive optical element, and a slit, wherein the slit has a slit opening whose length in a major-axis direction thereof is changeable, wherein a laser beam is delivered obliquely to a substrate, and wherein the laser beam is a continuous wave solid-state, gas, or metal laser, or a pulsed laser with a repetition frequency of 10 MHz or more.

Abstract: A system comprises a working laser beam, a sensing laser beam, first and second optical elements, an optical sensor, an aperture and a controller. The first optical element generates a coaxial beam from the working laser beam and the sensing laser beam. The second optical element focuses the coaxial beam onto a workpiece, such that the working laser beam machines the workpiece and the sensing laser beam reflects from the workpiece. The optical sensor senses an intensity of the reflected sensing beam. The aperture determines a focus position by translating along the reflected sensing beam, such that the reflected intensity is maximized. The controller determining a machining parameter of the working laser beam, based on the focus position.

Abstract: An apparatus to cut and surface process a workpiece includes a cutting tool to cut the workpiece; a peening tool to peen surfaces of the cut workpiece; and a controller to control the cutting tool, the peening tool and the workpiece to move simultaneously.

Abstract: A laser micro/nano processing system (100, 200, 300, 400) comprises: a laser light source used to provide a first laser beam having a first wavelength and a second laser beam having a second wavelength different from the first wavelength, with the pulse width of the first laser beam being in the range from a nanosecond to a femtosecond; an optical focusing assembly used to focus the first laser beam and the second laser beam to the same focal point; and a micro mobile platform (21) controlled by a computer. Also disclosed are a method for micro/nano-processing photosensitive materials with a laser and a method for fabricating a device with a micro/nano structure using laser two-photon direct writing technology. In the system and methods, spatial and temporal overlapping of two laser beams is utilized, so as to obtain a micro/nano structure with a processing resolution higher than that of a single laser beam, using an average power lower than that of a single laser beam.

Abstract: The present invention relates to a device for guiding a laser beam along a target path, particularly a joint. It has a laser beam input module that guides an incident laser beam onto a swiveling beam guiding device downstream from the laser beam input module. The beam guiding device projects the laser beam onto the target path. Said beam guiding device comprises a tactile sensor connected to the swiveling optic that is designed to perform a tactile scan of the target path and to deflect the swiveling optic appropriately. According to the invention, an intermediate focal point is located in the beam path of the laser beam between laser beam input module and swiveling optic. Moreover, the swivel axis of the swiveling optic runs through the intermediate focal point.

Abstract: Because of extreme hardness, diamonds have a number of important industrial applications. Generally experts work on it. Experts do marking after examining each rough diamond to decide how it should be cut to yield the greatest value. But in this process, there can be lots of wastage as it is only an image of the stone in the mind of the person. The present invention comprises Laser planner which scans each and every point of diamond by rotating it 360° and thus gives individual coordinate of that diamond. It shows us the wire frame image on the computer monitor. is a machine to scan the stone and to plan and mark for the best-fit diamond from that stone. All the data of the diamond is stored in the computer. It is material saving, time saving, mass processing increase in productivity.

Abstract: Systems and methods are provided for adjusting a laser beam applied to a workpiece in a processing operation. A laser processing system receives the laser beam that is associated with a beam quality property. The laser processing system adjusts the laser beam to change the beam quality property based on a characteristic of the workpiece, a characteristic of the processing operation, or a combination thereof. The adjusted laser beam can also be delivered to the workpiece.

Abstract: Methods are generally provided of reducing speckle of a laser beam from a laser source guided through an optical waveguide. The method includes vibrating an optical waveguide at a first point along the optical waveguide at a first frequency (e.g., having a range of about 20 kHz to about 20 GHz) for a certain distance (e.g., a distance of about 0.1 mm to about 5 cm), and directing the laser beam out of the optical waveguide from the laser source to a target. Such methods are particularly useful for scribing a thin film layer on a photovoltaic module (e.g., a cadmium telluride-based thin film photovoltaic device). Fiber optic laser systems are also generally provided for reducing speckle of a laser beam from a laser source guided through an optical waveguide.

Abstract: To provide a laser irradiation apparatus and a laser irradiation method in which a region formed with microcrystals in a region irradiated with laser beams is decreased by disposing a slit in an optical system using a deflector, and laser processing can be favorably conducted to a semiconductor film. Further to provide a semiconductor manufacturing apparatus using the above-described laser irradiation apparatus and the laser irradiation method. In the optical system, an f-? lens having an image space telecentric characteristic or a slit the shape of which is changed in accordance with the incidence angle of a laser beam, is used. The slit is disposed between the f-? lens and an irradiation surface, and an image at a slit opening portion is projected onto the irradiation surface by a projection lens. By the above-described structure, laser irradiation can be uniformly conducted to a whole region scanned with laser beams.

Abstract: A method and an apparatus for laser beam processing of an element (12) that has a total transmittance for light of at least 10?5, comprising a laser unit (1) for generating a laser beam on one side of the to-be-processed element (12), an illumination unit (7), an imaging system (10) comprising a sensor unit on the one side of the to-be-processed element (12), the sensor unit recording residual light that results from light of the illumination unit (7), a scanning unit (2) for adjusting the laser beam processing position, and a control unit. The control unit is operatively connected to the laser unit (1), the imaging system (10) and the scanning unit (2), and the illumination unit (7) is positioned on the other side of the to-be-processed element (12) in relation to the laser unit (1). Since the to-be-processed element (12) allows light to pass through an otherwise opaque or almost opaque layer, a good contrast is obtained that is used to determine the position of the laser beam with high precision.

Abstract: The invention provides a simple and inexpensive method to assemble nanomaterials into millimeter lengths. The method can be used to generate optical, sensing, electronic, magnetic and or catalytic materials. Also provided is a substrate comprised of fused nanoparticles. The invention also provides a diode comprised of assembled nanoparticles.