Abstract: Detector module designs for radiographic imaging include first and second layers of scintillator rods or pixel arrays oriented in first and second directions. The first and second directions are transversely oriented to define a light sharing region between the first and second layers. Encoding features may be disposed in, on or between the first and second layers, and configured to modulate propagation of optical signals therealong or therebetween.

Abstract: A device uses a light-emitting material. The device includes an upper and a lower electrode, a first photoelectric conversion portion disposed between the upper electrode and the lower electrode, a second photoelectric conversion portion, a first readout circuit connected to the first photoelectric conversion portion, and a second readout circuit connected to the second photoelectric conversion portion. The second photoelectric conversion portion converts light emitted from the light-emitting material into electrical charges.

Abstract: An apparatus including an array of sensors including a plurality of chemical sensors and a plurality of reference sensors, each chemical sensor coupled to a corresponding reaction region for receiving at least one reactant, and each reference sensor comprising a field effect transistor having a gate coupled to a corresponding reference line and an access circuit for accessing the chemical sensors and the reference sensors and a controller to apply bias voltages to the reference lines to select corresponding reference sensors, acquire output signals from the selected reference sensors, and identify one or more defects in the access circuit based on differences between the acquired output signals and expected output signals.

Abstract: A radiation detector includes: a scintillator panel having a scintillator layer; and a photoelectric conversion panel having a support substrate, a light receiving element, and a switching element, wherein the light receiving element faces the scintillator layer, the photoelectric conversion panel has flexibility, and the scintillator layer is formed by being sealed with a moisture-proof material.

Abstract: Embodiments include a detector with a flexible scintillator screen and a flexible photosensor array and an apparatus with supports coupled to the ends of the detector. The apparatus enables the detector to either flex repeatedly or be flexed and then fixedly held in a flexed configuration.

Abstract: According to an embodiment, a radiation detector includes a first scintillator, a second scintillator, and a photoelectric conversion element. The first scintillator converts radiation into light. The second scintillator converts radiation into light and has higher density than the first scintillator. The photoelectric conversion element is provided between the first scintillator and the second scintillator, and includes a photoelectric conversion layer converting light into electric charge.

Abstract: A radiation detection apparatus employs a sensor panel having first and second opposing surfaces with a pixel array and electrical contacts arranged on the first surface side. A first supporting portion is secured to the panel with an adhesive layer, and supports the pixel array from the second surface side of the panel. A second supporting portion is fixed to the panel so as to inhibit the second supporting portion from being removed from the panel. The second supporting portion supports the electrical contacts from the second surface side of the panel. The elastic modulus of the second supporting portion is higher than that of the adhesive layer, and a number of wiring members are pressure-bonded to the electrical contacts.

Abstract: Detector module designs for radiographic imaging include first and second layers of scintillator rods or pixel arrays oriented in first and second directions. The first and second directions are transversely oriented to define a light sharing region between the first and second layers. Encoding features may be disposed in, on or between the first and second layers, and configured to modulate propagation of optical signals therealong or therebetween.

Abstract: Detector module designs for radiographic imaging include first and second layers of scintillator rods or pixel arrays oriented in first and second directions. The first and second directions are transversely oriented to define a light sharing region between the first and second layers. Encoding features may be disposed in, on or between the first and second layers, and configured to modulate propagation of optical signals therealong or therebetween.

Abstract: A radiation detector includes a flexible substrate, and a sensor board including a layer which is provided on a first surface of the substrate and in which a plurality of pixels, which accumulate electrical charges generated in accordance with light converted from radiation, are formed, a conversion layer that is provided on the first surface side of the sensor board to convert radiation into light, a protective film that covers at least a region ranging from a region that covers the conversion layer to a region at an outer peripheral part of a second surface opposite to the first surface of the substrate, and a supporting member that supports the region of the substrate via the protective film from the second surface side of the substrate.

Abstract: An image sensor driving apparatus extracts an image signal from an image sensor including a plurality of photoelectric conversion elements two-dimensionally arrayed, and includes a conversion unit which converts the image signal into digital data by performing offset correction for the image signal. The apparatus obtains digital data corresponding to a first sampling count by causing the conversion unit to process a reference voltage signal in accordance with a synchronization signal which determines an imaging frame rate, and obtains digital data corresponding to a second sampling count by causing the conversion unit to process a reference voltage signal every time extracting an image signal from a photoelectric conversion element group obtained by dividing a plurality of photoelectric conversion elements. The apparatus generates a correction value used for offset correction based on the obtained digital data corresponding to the first and second sampling counts.

Abstract: In a plane including the center line of a vertical through hole, it is assumed that a segment that connects a first point corresponding to the edge of an opening of an insulating layer and a second point corresponding to the edge of a second opening is a first segment, a segment that connects the second point and a third point corresponding to an intersection point between the second opening and a surface of the insulating layer is a second segment, and a segment that connects the third point and the first point is a third segment. In the insulating layer, the first area located on one side with respect to the first segment is larger than the sum of the second area surrounded by the first, the second and the third segments and the third area located on the other side with respect to the third segment.

Abstract: In association with an imaging device which generates a portion of an image from a plurality of channels within a first row by sampling each channel during a sampling time corresponding to the channel, circuitry offsets sampling times of at least first and second channels within the first row, thereby reducing noise correlation between the first and second channels in the first row. Pixel sampling times may be defined by start times of the channels within a row, end times or both. Offsetting may be accomplished using a predetermined set of sampling time values or by randomizing sampling time values. Offsetting pixel sampling times of channels within a row relative to each other decorrelates channel sampling because different phases of the noise signal are sampled on each channel, effectively blurring or dithering the channel noise within each row. Random sampling within the channel, such as by varying a channel sampling time between rows, further dithers the noise within each channel.

Abstract: A protection film, configured to cover scintillators formed on a scintillator substrate, the scintillators being a plurality of columnar crystal structures protruding from a surface of the scintillator substrate, at least includes a metal alkoxide, and a cross-link formed by cross-linking some of metal atoms of the metal alkoxide by oxygen.

Abstract: A method of manufacturing a scintillator, includes growing a scintillator layer constituted by a plurality of column crystals on a base, forming a first protection film so as to cover the scintillator layer, planarizing the first protection film, the planarizing including a polishing process of polishing the first protection film, and forming a second protection film configured to cover the first protection film that has undergone the planarizing. The scintillator layers grown on the base include an abnormally grown portion. In the polishing process, a front end of the abnormally grown portion is polished as well as a surface of the first protection film so as to form a continuation surface by the surface of the first protection film and a surface of the abnormally grown portion.

Abstract: There is provided a radiographic imaging device including: a radiographic imaging device main body; and a protective cover that is removably applied to a surface of the radiographic imaging device main body, wherein a thickness of the radiographic imaging device main body, with the protective cover applied, is less than or equal to 16 mm.

Abstract: An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Abstract: The invention provides a method for chemical signature resolved detection of a concealed object within a system. The method includes irradiating the system at a plurality of positions with aplurality of electromagnetic radiation of specific wavelength; capturing a certain component of the scattered electromagnetic radiation from the object at a plurality of locations along various 3D planes around the system; obtaining a plurality of profiles from the captured component of the scattered electromagnetic radiation; filtering the profiles to obtain a chemical signature specific to the object; and resolving the chemical signatures to detect the concealed object, wherein, the step of detection includes determination of the shape, size and location of the object.

Abstract: A method for scintillation event localization in a radiation particle detector includes providing a plurality of scintillator element locations (2?) configured to emit a burst of photons responsive to a radiation particle being absorbed at the scintillator element location (2?). A burst of photons emitted by the scintillator element location (2?) is detected with a photosensor (5). The photosensor (5) includes an array of single photon avalanche diodes configured to break down responsive to impingement of a photon. Breakdown data (30) is acquired indicative of which of the single photon avalanche diodes are in breakdown. Predetermined photosensor sensitivity data (20, 40) assigns single photon avalanche diodes to groups. Each group is assigned to exactly one scintillator element location (2?). Finally the number of single photon avalanche diodes in breakdown is determined for each group individually to identify the scintillator element location (2?) that emitted the burst of photons.

Abstract: An electronic apparatus includes: an internal power supply to be charged; a charging circuit configured to supply electrical power from an external power supply to the internal power supply; a voltage measurement circuit configured to measure a voltage of the internal power supply; a temperature sensor configured to measure a temperature of the internal power supply; and an estimation circuit configured to estimate a degree of degradation of the internal power supply, wherein the estimation circuit determines whether it is possible to perform a degradation estimation process to estimate the degree of degradation of the internal power supply based on the voltage of the internal power supply and the temperature of the internal power supply, and performs the degradation estimation process on the internal power supply only when determining that it is possible to perform the degradation estimation process on the internal power supply.

Abstract: A radiation detection apparatus includes a sensor base, a sensor substrate supported by the sensor base and configured to output signals from a plurality of pixels for radiation detection, a peripheral member arranged on a periphery of a side surface of the sensor substrate separately from the sensor substrate, supported by the sensor base, and configured not to output the signal for the radiation detection, and a scintillator layer configured to continuously cover the sensor substrate and the peripheral member.

Abstract: A light guide plate comprises a light guide plate body having a first light emitting surface, a second light emitting surface which is opposite to the first light emitting surface, and a plurality of side surfaces which connect the first light emitting surface and the second light emitting surface. The light guide plate further comprises a plurality of phosphor grid dots arranged on the first light emitting surface and a reflection layer arranged on each of the phosphor grid dots. The phosphor grid dots are capable of generating excitation light after being irradiated by light from a light source. The reflection layer is configured to reflect the excitation light of the phosphor grid dots to the light guide plate body. Embodiments of the present disclosure also provide a front light source module, a display module and a display device.

Abstract: The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.

Abstract: A scintillator for imaging using X-rays or gamma rays or charged particles, includes a network of glass capillaries with an inner diameter no greater than 500 micrometers. The capillaries are filled with a polymer material made up of at least: (i) a monomer selected from the group including vinyltoluene, styrene and vinylxylene and the isomers thereof, (ii) a cross-linking agent made up of a dimethacrylate having a central chain which includes 1 to 12 carbon atoms, and (iii) lead dimethacrylate. The cross-linking agent is provided to make up 17 wt % to 60 wt % of the mixture thereof with the monomer, and the lead dimethacrylate makes up at least 5 wt %. The cross-linking agent is provided in a ratio of 1.75 to 2.25 times the weight content of the lead dimethacrylate.

Abstract: According to an embodiment, a detection device includes a plurality of first detectors and a plurality of second detectors. The plurality of first detectors are arranged on a two-dimensional plane. Each first detector is configured to detect photons in a photon-counting manner. The plurality of second detectors are arranged on the two-dimensional plane. Each second detector is configured to detect photons in a charge-integrating manner.

Abstract: A radiological image conversion panel, having a phosphor layer containing therein a fluorescent substance which emits light through radiation exposure, is manufactured by forming the fluorescent substance into respective columnar structures on one of surfaces of a substrate to thereby obtain a phosphor layer made up of a group of columnar structures. The panel is subsequently manufactured by forming reflection films by respectively covering an outer surface of each of the columnar structures with a reflection film while leaving a gap between respective adjoining columnar structures, the reflection film being arranged to reflect light of a predetermined wavelength. In case a refractive index of the gap is lower than a refractive index of the columnar structures, the reflection films are formed of an inorganic material having a higher refractive index than the refractive index of the columnar structures.

Abstract: A process for fabricating an organic x-ray detector is presented. The process includes forming a multilayered structure that includes disposing a first electrode layer on a thin film transistor array, disposing an organic absorber layer on the first electrode layer, and disposing a second electrode layer on the organic absorber layer. The process further includes disposing a scintillator layer on the second electrode layer and thermally treating the multilayered structure after the step of disposing the second electrode layer. An organic x-ray detector fabricated by the process is further presented. An x-ray system including the organic x-ray detector is also presented.

Abstract: Disclosed is an optical detector in which a boundary line BY defining an edge of a semiconductor region 14 is covered with signal read wiring E3 and a capacitor is configured between the semiconductor region 14 and the signal read wiring E3. High frequency components peak components of a carrier are quickly extracted to the outside via the capacitor, but the signal read wiring E3 covers the boundary line BY so that a semiconductor potential in the vicinity of the boundary line is stabilized and an output signal is stabilized.

Abstract: This disclosure provides systems, methods, and apparatus related to beam stops. In one aspect, a device comprises a luminescent material, a beam stop plate, and an optical fiber. The luminescent material is a parallelepiped having a first side and a second side that are squares and having a third side that is a rectangle or a square. The first side and the second side are perpendicular to the third side. The beam stop plate is attached to the first side of the luminescent material. The optical fiber has a first end and a second end, with the first end of the optical fiber attached to the third side of the luminescent material.

Abstract: An electron beam detection apparatus includes a first aperture element including a first set of apertures. The apparatus includes a second aperture element including a second set of apertures. The second set of apertures is arranged in a pattern corresponding with the pattern of the first plurality of apertures. The detection apparatus includes an electron-photon conversion element configured to receive electrons of the electron beam transmitted through the first and second aperture elements. The electron-photon conversion element is configured to generate photons in response to the received electrons. The detection apparatus includes an optical assembly including one or more optical elements. The detection apparatus includes a detector assembly. The optical elements of the optical assembly are configured to direct the generated photons from the electron-photon conversion system to the detector assembly.

Abstract: An X-ray detector array includes a scintillator that converts input X-ray radiation to secondary optical radiation output from the scintillator, a first telecentric micro lens array that array receives the secondary optical radiation, a phase coded aperture, where the first telecentric micro lens array directs the secondary optical radiation on the phase coded aperture, a second telecentric micro lens array, where the secondary optical radiation output from the phase coded array is directed to the second telecentric micro lens array, a patterned grating mask, where the second telecentric micro lens array directs the optical beam on the patterned mask, and a photodetector array, where the patterned mask outputs the optical beam in a pattern according to the patterned mask to the photodetector array, where the photodetector array outputs a signal, where a photon fringe pattern is imaged and sampled in the wavelength domain of the radiation from the scintillator.

Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.

Abstract: An image sensor driving apparatus extracts an image signal from an image sensor including a plurality of photoelectric conversion elements two-dimensionally arrayed, and includes a conversion unit which converts the image signal into digital data by performing offset correction for the image signal. The apparatus obtains digital data corresponding to a first sampling count by causing the conversion unit to process a reference voltage signal in accordance with a synchronization signal which determines an imaging frame rate, and obtains digital data corresponding to a second sampling count by causing the conversion unit to process a reference voltage signal every time extracting an image signal from a photoelectric conversion element group obtained by dividing a plurality of photoelectric conversion elements. The apparatus generates a correction value used for offset correction based on the obtained digital data corresponding to the first and second sampling counts.

Abstract: A semiconductor device includes a first substrate, a second substrate, a connection part, and an alignment mark. The connection part includes a first electrode which is disposed on the first substrate, a second electrode which is disposed on the second substrate, and a connection bump which connects the first electrode and the second electrode. The alignment mark includes a first mark which is disposed on the first substrate and a second mark which is disposed on the second substrate. A sum of a height of the first mark and a height of the second mark is substantially equal to a sum of a height of the first electrode, a height of the second electrode, and a height of the connection bump.

Abstract: A scintillator panel includes a support and a scintillator layer, wherein the scintillator layer includes scintillator particles, a binder resin, and a void, and the porosity of the scintillator layer is from 14 to 35% by volume.

Abstract: An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

Abstract: According to an embodiment, a radiation detector comprises a photoelectric conversion substrate and a scintillator layer. The photoelectric conversion substrate converts light into an electrical signal. The scintillator layer contacts the photoelectric conversion substrate and converts radiation incident from the outside into light. The scintillator layer is a fluorescer of CsI containing Tl as an activator. The CsI is a halide. The concentration of the activator inside the fluorescer is 1.6 mass %±0.4 mass %. The concentration of the activator inside the fluorescer in an in-plane direction of the scintillator layer has the relationship of central portion>peripheral portion. The central portion is a central region of a formation region of the scintillator layer. The peripheral portion is an outer circumferential region of the formation region of the scintillator layer.

Abstract: The embodiments of the present invention provide a substrate and a manufacturing method thereof, as well as a display device.

Abstract: An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

Abstract: Scintillator-based radiation detectors capable of transmitting light indicating the presence of radiation for long distances are disclosed herein. A radiation detector can include a scintillator layer and a light-guide layer. The scintillator layer is configured to produce light upon receiving incident radiation. The light-guide layer is configured to receive light produced by the scintillator layer and either propagate the received light through the radiation detector or absorb the received light and emit light, through fluorescence, that is propagated through the radiation detector. A radiation detector can also include an outer layer partially surrounding the scintillator layer and light-guide layer. The index of refraction of the light-guide layer can be greater than the index of refraction of adjacent layers.

Abstract: According to one embodiment, provided is a display device with an improved manufacturability which is capable of preventing a decrease in the display quality due to a change in the gap between an array substrate and a counter substrate caused by a temperature change. The primary bonding portion is composed of translucent synthetic resin and provided to bond together the counter substrate side and a touch panel side in a manner covering at least a display area. The secondary bonding portion is provided in a columnar shape through curing of adhesive being ultraviolet curable liquid resin with a viscosity higher than that of the synthetic resin of the primary bonding portion, the secondary bonding portion bonding together the non-opposed portion side and the touch panel side.

Abstract: A radiation detector device for detecting a primary radiation includes a scintillator which generates a converted primary radiation in response to incoming primary radiation and a photo detector for detecting the converted primary radiation. The radiation detector device further includes a secondary radiation source for irradiating the scintillator with a secondary radiation which has a wavelength different from a wavelength of the first radiation and which is capable of producing a spatially more uniform response of the scintillator to primary radiation.

Abstract: The invention relates to radiation detection with a directly converting semiconductor layer for converting an incident radiation into electrical signals. Sub-band infra-red (IR) irradiation considerably reduces polarization in the directly converting semi-conductor material when irradiated, so that counting is possible at higher tube currents without any baseline shift. An IR irradiation device is integrated into the readout circuit to which the crystal is flip-chip bonded in order to enable 4-side-buttable crystals.

Abstract: A radiation detection device, including: a support structure; and a chalcopyrite crystal coupled to the support structure; wherein, when the chalcopyrite crystal is exposed to radiation, a visible spectrum of the chalcopyrite crystal changes from an initial color to a modified color. The visible spectrum of the chalcopyrite crystal is changed back from the modified color to the initial color by annealing the chalcopyrite crystal at an elevated temperature below a melting point of the chalcopyrite crystal over time. The chalcopyrite crystal is optionally a 6LiInSe2 crystal. The radiation is comprised of neutrons that decrease the 6Li concentration of the chalcopyrite crystal via a 6Li(n,?) reaction. The initial color is yellow and the modified color is one of orange and red. The annealing temperature is between about 450 degrees C. and about 650 degrees C. and the annealing time is between about 12 hrs and about 36 hrs.

Abstract: A microelectronic package may be fabricated with debug access ports formed either at a side or at a bottom of the microelectronic package. In one embodiment, the debug access ports may be formed within an encapsulation material proximate the microelectronic package side. In another embodiment, the debug access ports may be formed in a microelectronic interposer of the microelectronic package proximate the microelectronic package side. In a further embodiment, the debug access ports may be formed at the microelectronic package bottom and may include a solder contact.

Abstract: A radiation image sensing apparatus includes an image sensor configured to sense a plurality of radiation images at a frame rate according to a synchronization signal, and a controller configured to control the image sensor. In a case in which the frame rate is lower than a predetermined frame rate, the controller causes the image sensor to perform a temperature controlling operation of generating additional heat other than heat generated by an image sensing operation in addition to the image sensing operation so as to reduce a change in a temperature of the image sensor.

Abstract: An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Abstract: A particle detector having a support member. A front electrode layer is disposed over the support member. A semiconductor junction having at least an n-type layer and at least a p-type layer is disposed over the front electrode layer. A back electrode layer is disposed over the semiconductor junction. The back electrode layer has a thickness which is selected to permit particles having energies in the range from about 0.5 MeV to about 5 MeV to enter the semiconductor junction.

Abstract: The present invention relates to a flat panel X-ray detector, which comprises a thin film transistor (TFT) substrate; a photoelectric detecting layer, which is disposed on and electrically connected with the TFT substrate, wherein the photoelectric detecting layer comprises a plurality of photoelectric detecting units and a plurality of light absorption units, and the light absorption unit is disposed between spaces adjacent to the photoelectric detecting unit; a Scintillation layer, which is disposed on the photoelectric detecting layer; and a reflective layer, which is disposed on the Scintillation layer.