Abstract: The invention provides methods and apparatus for detecting radiation including x-ray, gamma ray, and particle radiation for nuclear medicine, radiographic imaging, material composition analysis, high energy physics, container inspection, mine detection and astronomy. The invention provides detection systems employing one or more detector modules comprising edge-on scintillator detectors with sub-aperture resolution (SAR) capability employed, e.g., in nuclear medicine, such as radiation therapy portal imaging, nuclear remediation, mine detection, container inspection, and high energy physics and astronomy. The invention also provides edge-on imaging probe detectors for use in nuclear medicine, such as radiation therapy portal imaging, or for use in nuclear remediation, mine detection, container inspection, and high energy physics and astronomy.

Abstract: A radiation detector characterized by includes a photoelectric conversion element, a scintillation layer which converts radioactive rays to fluorescence, the scintillation layer being formed on the photoelectric conversion element, and a reflective film formed on the scintillation layer, the reflective film containing light-scattering particles for reflecting the fluorescence from the scintillation layer and a binder material binding the light-scattering particles, and having depletion portions without being filled with the binder material, the depletion portions being formed in a periphery of the light-scattering particles.

Abstract: The disclosure is directed at a radiation detector comprising a substrate layer of detector material; a set of readout electronics deposited and integrated on one side of the substrate layer; and a contact layer deposited on a side of the substrate layer opposite the set of readout electronics.

Abstract: The invention provides methods and apparatus for detecting radiation including x-ray, gamma ray, and particle radiation for nuclear medicine, radiographic imaging, material composition analysis, high energy physics, container inspection, mine detection and astronomy. The invention provides detection systems employing one or more detector modules comprising edge-on scintillator detectors with sub-aperture resolution (SAR) capability employed, e.g., in nuclear medicine, such as radiation therapy portal imaging, nuclear remediation, mine detection, container inspection, and high energy physics and astronomy. The invention also provides edge-on imaging probe detectors for use in nuclear medicine, such as radiation therapy portal imaging, or for use in nuclear remediation, mine detection, container inspection, and high energy physics and astronomy.

Abstract: The invention provides methods and apparatus for detecting radiation including x-ray, gamma ray, and particle radiation for nuclear medicine, radiographic imaging, material composition analysis, high energy physics, container inspection, mine detection and astronomy. The invention provides detection systems employing one or more detector modules comprising edge-on scintillator detectors with sub-aperture resolution (SAR) capability employed, e.g., in nuclear medicine, such as radiation therapy portal imaging, nuclear remediation, mine detection, container inspection, and high energy physics and astronomy. The invention also provides edge-on imaging probe detectors for use in nuclear medicine, such as radiation therapy portal imaging, or for use in nuclear remediation, mine detection, container inspection, and high energy physics and astronomy.

Abstract: A method of determining the presence of 99Tc in a container includes the steps of (a) subjecting the exterior of the container to neutron bombardment of sufficient energy to assure passage of the neutrons to the interior of the container; and (b) observing the emission or non-emission of gamma radiation from the container at energy levels of about 540 keV and about 591 keV as an indicator of the presence or non-presence, respectively, of 99Tc within the container.

Abstract: The present invention provides a two-terminal infrared detector capable of detecting a plurality of bands, such as three bands, over the visible and short-wave infrared bands. Detection of three colors enables one to construct composite imagery that provide significantly added contract in comparison to typical grayscale images. In some variations, the device includes multiple absorber and barrier layers that consist of distinct engineered semiconductor alloys which are closely lattice matched to InP.

Abstract: Demultiplexing systems and methods are discussed which may be small and accurate without moving parts. In some cases, demultiplexing embodiments may include optical filter cavities that include filter baffles and support baffles which may be configured to minimize stray light signal detection and crosstalk. Some of the demultiplexing assembly embodiments may also be configured to efficiently detect U.V. light signals and at least partially compensate for variations in detector responsivity as a function of light signal wavelength.

Abstract: A detector module is disclosed including a plurality of directly converting detector submodules, each with a back contact, and a scattered radiation collimator spanning the detector submodules. For contacting the back contacts, a contacting unit is provided in at least one embodiment and designed so that a contact connection is established between the contacting unit and the counter-electrodes by way of assembly-related proximity of the scattered radiation collimator and the counter-electrodes.

Abstract: Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Abstract: The invention relates to converter element (100) for a radiation detector, particularly for a Spectral CT scanner. The converter element (100) comprises at least two conversion cells (131) that are at least partially separated from each other by intermediate separation walls (135) which affect the spreading of electrical signals generated by incident radiation (X). The conversion cells (131) may particularly consist of a crystal of CdTe and/or CdZnTe. Said crystal is preferably grown by e.g. vapor deposition between preformed separation walls.

Abstract: In a radiation detecting system including an electric voltage imparting electrode through which a bias electric voltage is applied, a recording photoconductive layer which comprises a-Se and generates electric charges in response to receipt of projection of radiation, a carrier collecting electrode, a charge storing portion which stores electric charges generated in the recording photoconductive layer and a switching element for reading out charge signal stored in the charge storing portion, superposed one on another in this order, an organic resin dielectric layer which is not smaller than 0.01 ?m and smaller than 1 ?m in thickness, not lower than 1012 ?cm in specific resistance and 6×10?6 to 1.5×10?4/° C. in thermal expansion coefficient is provided between the recording photoconductive layer and the electric voltage imparting electrode.

Abstract: Tomography by emission of positrons (pet) system dedicated to examinations of human body parts such as the breast, axilla, head, neck, liver, heart, lungs, prostate region and other body extremities which is composed of at least two detecting plates (detector heads) with dimensions that are optimized for the breast, axilla region, brain and prostrate region or other extremities; motorized mechanical means to allow the movement of the plates under manual or computer control, making it possible to collect data in several orientations as needed for tomographic image reconstruction; an electronics system composed by a front-end electronics system, located physically on the detector heads, and a trigger and data acquisition system located off-detector in an electronic crate; a data acquisition and control software; and an image reconstruction and analysis software that allows reconstructing, visualizing and analyzing the data produced during the examination.

Abstract: A substrate for forming a semiconductor layer includes a plurality of linear convexes or grooves on a surface of the substrate by crystal growth. The plurality of linear convexes or grooves are formed along a direction of a cleavage plane of the semiconductor layer.

Abstract: A Gunn diode includes an active layer having a top and a bottom, a first contact layer disposed adjacent to the top of the active layer, a second contact layer disposed adjacent to the bottom of the active layer, wherein the first and second contact layers are more heavily doped than the active layer, and at least one outer contact layer disposed at an outer region of at least one of the first and second contact layers, the at least one outer contact layer being more heavily doped than the first and second contact layers, wherein the first and second contact layers, the active layer, and the at least one outer contact layer include a base material that is the same.

Abstract: In a radiation detecting system including an electric voltage imparting electrode through which a bias electric voltage is applied, a recording photoconductive layer which comprises a-Se and generates electric charges in response to receipt of projection of radiation, a carrier collecting electrode, a charge storing portion which stores electric charges generated in the recording photoconductive layer and a switching element for reading out charge signal stored in the charge storing portion, superposed one on another in this order, an organic resin dielectric layer which is not smaller than 0.01 ?m and smaller than 1 ?m in thickness, not lower than 1012 ?cm in specific resistance and 6×10?6 to 1.5×10?4/° C. in thermal expansion coefficient is provided between the recording photoconductive layer and the electric voltage imparting electrode.

Abstract: A semiconductor substrate is composed of a SiC crystal. A metal film having a desired area and serving as an incident surface onto which X-rays are made incident is formed on one surface of the semiconductor substrate. An electrode having the shape of a circle is formed at the central portion of the other surface of the semiconductor substrate. A ring-shaped electrode is formed in a portion near the circumference of the semiconductor substrate so as to surround the electrode. A predetermined direct voltage is applied to the metal film and the ring-shaped electrode. A voltage of a ground level is applied to the electrode. X-rays (?-rays) that are made incident onto the metal film cause the generation of electron-hole pairs in the semiconductor substrate. The generated electrons are collected at the electrode and drawn as electric signals from an output terminal.

Abstract: An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.

Abstract: An X-ray detector includes: a semiconductor substrate to generate charged particles by an irradiation of an X-ray; a plurality of pixel electrodes arranged in matrix on an X-ray incident surface of the semiconductor substrate and applied with a first electric potential to detect the charged particles; and a platy electrode provided on a surface opposite to the X-ray incident surface of the semiconductor substrate and applied with a second electric potential different from the first electric potential.

Abstract: New sensors, pixel detectors and different embodiments of multi-channel integrated circuit are disclosed. The new high energy and spatial resolution sensors use solid state detectors. Each channel or pixel of the readout chip employs low noise preamplifier at its input followed by other circuitry. The different embodiments of the sensors, detectors and the integrated circuit are designed to produce high energy and/or spatial resolution two-dimensional and three-dimensional imaging for different applications. Some of these applications may require fast data acquisition, some others may need ultra high energy resolution, and a separate portion may require very high contrast. The embodiments described herein addresses these issues and also other issues that may be useful in two and three dimensional medical and industrial imaging.

Abstract: At least part of a readout pattern including carrier collecting electrodes, capacitors, thin-film transistors, data lines and gate lines is formed by vapor deposition or printing. This is formed separately from a semiconductor thick film. The semiconductor thick film and readout pattern constitute a flat panel X-ray detector (FPD) is mounted in a case to form a unit. A weight reduction is achieved by using the semiconductor thick film in place of a conventional glass substrate. The FPD manufactured in this way is free from great restrictions in time of transport and use.

Abstract: A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI2 or II-IV-V2 where the “I” component is from column 1A or 1B of the periodic table, the “II” component is from column 2B, the “III” component is from column 3A, the “IV” component is from column 4A, the “V” component is from column 5A, and the “VI” component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Abstract: A detector of periodic packets of X photons, each packet having a duration shorter than 0.1 nanosecond, comprising a sensor comprising a semiconductor element of type III-V biased in a negative differential resistance region, said sensor being arranged in a resonant cavity tuned to a multiple of the packet repetition frequency.

Abstract: A device for detecting radiation includes a substantially transparent substrate with one or more substantially transparent scintillating films patterned onto the surface and with one or more integrated waveguides such that radiation of differing species may be detected by an optical light detector and such that the composition of the radiation may be analyzed. A scintillating material for detecting individual species of radiation and including one or more groups of nanoparticles mixed with a fast electron scintillating material and extruded into a transparent film such that a light pulse is emitted when said transparent film is exposed to the species of radiation targeted by the nanoparticle groups.

Abstract: A method for manufacturing a photo-responsive device having a photo-sensitive layer is proposed. The method comprises the following steps: a) providing a clean substrate inside an evacuated evaporation chamber; b) evaporating lead oxide (PbO) from a first crucible to form a seeding layer on the surface of the substrate; c) affecting upon the seeding layer such that only tetragonal lead oxide forms the seeding layer and/or such that the initially grown orthorhombic lead oxide forming the seeding layer is transformed into tetragonal lead oxide; and d) continuing to evaporate lead oxide until the final thickness of the photo-sensitive layer has been deposited onto the substrate. As a result the method yields a photo-responsive device comprising a photo-sensitive layer of lead oxide, which entirely consists of tetragonal lead oxide.

Abstract: Inorganic scintillator material of formula AnLnpX(3p+n) in which has a very low nuclear background noise and is particularly suitable as a detector scintillator for coating weight or thickness measurements, in the fields of nuclear medicine, physics, chemistry and oil exploration, and for the detection of dangerous or illicit materials.

Abstract: A radiation detection, localization, and identification system uses a searching algorithm to identify geometric correlation of hypothetical solutions to Compton Imaging. Geometric correlation of correct associations of gamma ray energies with each detected event yields the identity and location of radiation sources. The system's detector is an array of radiation detectors networked to act as a single detection system. This network has wide area of view and high sensitivity to radiation sources since no collimation is required.

Abstract: An X-ray detector for detecting X rays includes a semiconductor for generating electric charges therein upon X-ray incidence, and electrodes formed on opposite sides of the semiconductor for application of a predetermined bias voltage. The semiconductor is amorphous selenium (a-Se) doped with a predetermined quantity of an alkali metal.

Abstract: A heterodyne terahertz transceiver comprises a quantum cascade laser that is integrated on-chip with a Schottky diode mixer. An antenna connected to the Schottky diode receives a terahertz signal. The quantum cascade laser couples terahertz local oscillator power to the Schottky diode to mix with the received terahertz signal to provide an intermediate frequency output signal. The fully integrated transceiver optimizes power efficiency, sensitivity, compactness, and reliability. The transceiver can be used in compact, fieldable systems covering a wide variety of deployable applications not possible with existing technology.

Abstract: GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein ALu represents the number of Lu atoms in the crystal and AGd represents the number of Gd atoms in the crystal. {ALu/(ALu+AGd)}<0.

Abstract: GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Abstract: In a solid state radiation detector which includes an electrostatic recording section having a photoconductive layer that shows conductivity when exposed to recording light, and is constructed to receive recording light representing image information to record the image information in the detector, and to output image signals representing the recorded image information, the photoconductive layer is swept by an amount of major carrier greater than or equal to an amount of current that flows through the photoconductive layer at the time of recording to facilitate the recombination of minor carriers (residual charges) accumulated in the photoconductive layer.

Abstract: Improved corrosion resistance for direct X-ray imaging detectors is obtained by providing a pixelated, electrically conductive barrier layer between the X-ray sensitive material and the pixel electrodes. Each barrier layer can cover part or all of its corresponding pixel electrode. In cases where pixel electrodes makes contact to underlying circuitry through vertical vias, it is preferred for the barrier layers to cover the via sections of the pixel electrodes. The barrier layers for each pixel electrode can be spaced apart from each other, or they can all be included within a continuous film on top of the pixel electrodes. Such a continuous film can be pixelated by spatially modulating its properties (e.g., thickness, doping) to significantly reduce lateral conductivity from pixel to pixel.

Abstract: In a radiation detector, electrodes are provided on both sides of a photoconductive layer for recording. When the photoconductive layer for recording is irradiated with radiation during application of a predetermined bias voltage between the electrodes, electric charges are generated within the photoconductive layer for recording. Then, the generated electric charges are detected as an electric signal by the radiation detector. As the material for the photoconductive layer for recording, amorphous selenium having a coordination number of 1.95±0.02 is used.

Abstract: The inorganic scintillator of the invention has the chemical composition represented by CexLnySizOu (where Ln represents at least two elements selected from among Y, Gd and Lu. 0.001?x?0.1, 1.9?y?2.1, 0.9?z?1.1, 4.9?u?5.1) and emits fluorescence upon incidence of radiation, wherein the maximum peak wavelength in the intensity spectrum of the emitted fluorescence is a peak in the range between 450 nm and 600 nm.

Abstract: A high-energy radiation detector is disclosed which uses a semiconductor material to absorb high-energy radiation and emit secondary light in response. The semiconductor is designed to be largely transparent for the interband light it emits so that the generated secondary photons can reach the semiconductor surface, to be detected by a suitable photo-detector. The semiconductor thus plays a role of a scintillator with the emitted light registered by a photo-detector. Two different device embodiments are disclosed. The first embodiment employs a uniform bulk slab of the appropriately chosen semiconductor, such as n-doped InP. Its principal advantage lies in the simplicity and low cost. The second device employs a multi-layer heterostructure. The principal advantage of the second type detector is the possibility of a substantial enhancement in the efficiency of absorption of the primary high-energy radiation.

Abstract: The invention concerns an inorganic scintillator material of general composition M1-xCexCl3, wherein: M is selected among lanthanides or lanthanide mixtures, preferably among the elements or mixtures of elements of the group consisting of Y, La, Gd, Lu, in particular among the elements or mixtures of elements of the group consisting of La, Gd and Lu; and x is the molar rate of substitution of M with cerium, x being not less than 1 mol % and strictly less than 100 mol %. The invention also concerns a method for growing said monocrystalline scintillator material, and the use of said scintillator material as component of a scintillating detector in particular for industrial and medical purposes and in the oil industry.

Abstract: A device to measure a radiation dose, in particular an x-ray radiation dose, which absorbs radiation and provides an absorption-conditional output signal representing a measurement for the dose, has at least one absorption structure disposed on a foil-like carrier, made from thin-film layers disposed on top of one another that form at least one thin-film diode structure that supplies the output signal.

Abstract: A detector of radiation uses a composite material, and process manufactures the detector. The detector includes layers (6) of a semiconducting composite material including a host matrix made of a polymer and semiconducting-type guest particles dispersed through the host matrix, means (22–26) for creating an electric field in the layers, and a stack of sheets (4) of a first material emitting particles by interaction with the radiation, the layers alternating with the sheets, each of the layers being associated with one of the sheets, the stack having opposite faces, each containing the edges of the sheets and layers. The means for creating includes, for each layer, a group of parallel and conductive tracks (22) which extend from one face to the other, parallel to this layer, and which are in contact with it.

Abstract: A monolithic solid-state detector using a staggered arrangement of pixels in multiple rows improves spatial resolution without requiring reduction in pixel size. Parallelogram shapes of CZT monolith allow tiling in one dimension without inefficient zones between monoliths. A scanning device using linear array of detectors with non-rectangular shape and staggered rows of detection elements such that no dead zones occur within a scan field.

Abstract: A method for detecting single photons of high energy radiation using a detector comprising an array of pixels, each pixel including a charge receptive substrate. The method includes the operations of capturing high energy photons with the pixel array, collecting the charges generated in each pixel by the charge receptive substrate of that pixel, reading out the collected charges and analyzing the read out charges. In addition, a system for detecting single photons of high energy radiation is described. The system includes a pixel array in which each pixel includes a polycrystalline photoconductive film deposited on a charge receptive substrate. The system further includes low noise electronics for reading out the charges generated by high energy photons when the latter interact with the film. Additionally, the system includes a data processor in communication with the low noise electronics.

Abstract: The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.

Abstract: A high-purity InSb single crystal not artificially doped with impurities is used as a radiation detecting medium. In order to obtain diode characteristics, a Au.Pd alloy is used to form a surface barrier layer. At 4.2 K, the device resistance of the thus fabricated solid-state radiation detector was as large as 1.4 k? and the rise time of output signals from a charge-sensitive preamplifier was as short as 0.4 ?s, indicating reduced trapping of electrons or positive holes. The detector was also capable of measuring ?-ray spectra over the temperature range from 2 K to 50 K.

Abstract: A radiation detector for detecting a spatial distribution of incident radiation includes a radiation-sensitive semiconductor, a common electrode formed on one surface of the semiconductor for receiving a bias voltage, a plurality of split electrodes formed on the other surface of the semiconductor for outputting, as electric signals, charges generated within the semiconductor by the incident radiation, and a light irradiating mechanism for emitting light at least during a detection of the radiation.

Abstract: A radiation detector comprises a boron-doped diamond substrate (10) having an overlayer (12) of diamond epitaxially grown on surface (14) of the substrate (10). The top surface (16) of the layer (12) is provided with an interdigitated electrode array (18) in electrical contact therewith.

Abstract: The surfaces of an amorphous carbon substrate 10 of a scintillator panel 1 have undergone sandblasting, and an Al film 12 serving as a reflecting film is formed on one surface. A columnar scintillator 14 for converting incident radiation into visible light is formed on the surface of the Al film 12.

Abstract: A radiation imaging apparatus includes a radiation detecting unit and an image-display controlling unit. The radiation detecting unit has radiation detectors, arranged in a two-dimensional array, for detecting radiation transmitted through an object as electrical signals. The image-display controlling unit radiographs radiation images of the object, detected as the electrical signals by the radiation detecting unit, at a predetermined frame rate as continuous images in a plurality of frames and displays a processed image given by subtracting an m-th image from an (m+1)-th image in synchronous with either the m-th image or the (m+1)-th image that does not undergo the subtraction in a display, where m is a natural number.

Abstract: On a front face of a substrate transparent to the radiation considered, pixels are confined in a stack of absorbent semi-conducting material layers by a network of channels. An insulating layer covers the bottom and the side walls of the channels. An electrically conducting layer covers the insulating layer on the bottom and on the side walls of the channels confining at least a part of the pixels. The conducting layer can be voltage polarized.

Abstract: A radiation detection and imaging system, which includes at least one radiation detecting and imaging element comprising a planar substrate, a surface of which has been seeded with mercuric iodide grains having a diameter in the range of about 0.01-1.0 micron, before being subjected to a step of deposition thereon of a layer of polycrystalline mercuric iodide having a thickness of up to about 3000 microns. A process for preparing an element such as the one described. A planar substrate, wherein a surface thereof has been seeded with mercuric iodide grains having a diameter in the range of about 0.01-1.0 micron. A physical vapor deposition method for preparing a radiation detecting and imaging element comprising a planar substrate by deposition of a film of mercuric iodide having a maximum thickness of about 3000 microns on a surface on the substrate.