Abstract: A photolithographic process forms patterns on HgI2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI2 surfaces and for producing trenches in HgI2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

Abstract: A device to measure a radiation dose, in particular an x-ray radiation dose, which absorbs radiation and provides an absorption-conditional output signal representing a measurement for the dose, has at least one absorption structure disposed on a foil-like carrier, made from thin-film layers disposed on top of one another that form at least one thin-film diode structure that supplies the output signal.

Abstract: An element adapted for at least one use selected from high energy radiation detection, imaging and barrier use, which includes a planar substrate on a surface of which there is a layer polycrystalline mercuric iodide, which has been deposited from the vapor phase, having a thickness within the range of from more than 0.5 mm and up to about 10 mm. A process for preparing an element having such thicknesses. A planar substrate, having deposited on a surface thereof, a layer of mercuric iodide in at least two discrete adjacent sub-layers having a total thickness within the range of from greater than 0.5 mm to about 10 mm. A system adapted for at least one purpose selected from radiation detection, radiation imaging and high energy absorption, which includes an element having thicknesses as described above.

Abstract: A continuous multi-layer construction for detecting radiation including a polymer layer, a conducting electrode layer affixed to the polymer layer and a particle-in-binder composite layer affixed to the conducting electrode layer, where the composite layer absorbs photons. A process for fabricating continuous multi-layer constructions for detection of radiation including the following steps: depositing a conducting electrode layer onto a polymer film, applying at least one coating layer of a particle-in-binder composite onto the conducting electrode layer, and drying the at least one coating layer of the particle-in-binder composite.

Abstract: This invention relates to a radiation detection device for detecting ionizing beam discharges such as gamma rays, x-rays, electron beams, charged particle beams and neutral particle beams. Specifically, it relates to a radiation detection device which can measure radiations which exist for a very short time (of the order of subnanoseconds or less) from the appearance of photoemission to extinction.

Abstract: A handheld CZT radiation detector having a CZT gamma-ray sensor, a multichannel analyzer, a fuzzy-logic component, and a display component is disclosed. The CZT gamma-ray sensor may be a coplanar grid CZT gamma-ray sensor, which provides high-quality gamma-ray analysis at a wide range of operating temperatures. The multichannel analyzer categorizes pulses produce by the CZT gamma-ray sensor into channels (discrete energy levels), resulting in pulse height data. The fuzzy-logic component analyzes the pulse height data and produces a ranked listing of radioisotopes. The fuzzy-logic component is flexible and well-suited to in-field analysis of radioisotopes. The display component may be a personal data assistant, which provides a user-friendly method of interacting with the detector. In addition, the radiation detector may be equipped with a neutron sensor to provide an enhanced mechanism of sensing radioactive materials.

Abstract: A method for detecting single photons of high energy radiation using a detector comprising an array of pixels, each pixel including a charge receptive substrate. The method includes the operations of capturing high energy photons with the pixel array, collecting the charges generated in each pixel by the charge receptive substrate of that pixel, reading out the collected charges and analyzing the read out charges. In addition, a system for detecting single photons of high energy radiation is described. The system includes a pixel array in which each pixel includes a polycrystalline photoconductive film deposited on a charge receptive substrate. The system further includes low noise electronics for reading out the charges generated by high energy photons when the latter interact with the film. Additionally, the system includes a data processor in communication with the low noise electronics.

Abstract: A radiation detector for detecting a spatial distribution of incident radiation includes a radiation-sensitive semiconductor, a common electrode formed on one surface of the semiconductor for receiving a bias voltage, a plurality of split electrodes formed on the other surface of the semiconductor for outputting, as electric signals, charges generated within the semiconductor by the incident radiation, and a light irradiating mechanism for emitting light at least during a detection of the radiation.

Abstract: An electromagnetic wave detecting device which includes a semiconductor film that generates a charge upon induction by an electromagnetic wave, and an active matrix array for reading out the charge generated in the semiconductor film, detects the electromagnetic wave by a direct converting system. The electromagnetic wave detecting device has a characteristic that the active matrix array is formed by having a resin substrate as its base. Since resin has a less weight and a superior impact resistance than glass, it makes an active matrix substrate difficult to break, while improving portability and mobility.

Abstract: Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.

Abstract: A radiation image sensor includes a radiation detector layer formed of radiation detector particles which generate electric charges upon exposure to recording radiation and are dispersed in a polymer, and an electric signal detector layer formed of detector elements each of which is formed on the surface of a plastic substrate for each pixel to detect the electric charges generated at the corresponding pixel in the radiation detector layer. The radiation detector layer and the electric signal detector layer are laminated one on the other.

Abstract: A radiation detector comprises a boron-doped diamond substrate (10) having an overlayer (12) of diamond epitaxially grown on surface (14) of the substrate (10). The top surface (16) of the layer (12) is provided with an interdigitated electrode array (18) in electrical contact therewith.

Abstract: The surfaces of an amorphous carbon substrate 10 of a scintillator panel 1 have undergone sandblasting, and an Al film 12 serving as a reflecting film is formed on one surface. A columnar scintillator 14 for converting incident radiation into visible light is formed on the surface of the Al film 12.

Abstract: A radiation detecting apparatus having an enlarged detection area and improved radiation detecting sensitivity includes a semiconductor layer formed of an n-type amorphous or polycrystal semiconductor of high specific resistance, with a &mgr;&tgr; product (mobility×mean life) of holes being larger than a &mgr;&tgr; product of electrons. The semiconductor layer has a surface electrode formed on one surface thereof to which a negative bias voltage is applied, and a carrier collection electrode formed on the other surface. The semiconductor layer provides an electronic injection inhibiting structure on the surface electrode side thereof, and a hole injection permitting structure on the carrier collection electrode side. In time of detecting radiation, electrons which are majority carriers are not injected from the surface electrode side into the semiconductor layer, while holes which are minority carriers are injected from the carrier collection electrode side.

Abstract: A planar X-ray detector has an X-ray charge conversion film converting an incident X-ray into electric charges, pixel electrodes provided on the X-ray charge conversion film corresponding to respective pixels arranged in an array, switching elements connected to the respective pixel electrodes, signal lines, each of which is connected to a column of switching elements, scanning lines, each of which transmits driving signals to a row of switching elements, and a common electrode provided on the surface of the X-ray charge conversion film opposite to the surface on which the pixel electrodes are provided. The X-ray charge conversion film contains an X-ray sensitive material made of inorganic-semiconductor particles, and a carrier transport material made of an organic semiconductor.

Abstract: A two-dimensional image detector that allows charges generated by each photoconductor particle to be smoothly transmitted through a photoconductive layer and thereby ensures effective transmission of charges generated in the photoconductive layer to an active matrix substrate. A two-dimensional image detector of the present invention includes at least an active matrix substrate 1 having a plurality of pixel electrodes 10, and a photoconductive layer 2 laminated on the pixel electrodes 10. The photoconductive layer 2 is composed of a particulate photoconductor, and a binder containing a resin that renders volumetric shrinkage upon reaction. In other words, the foregoing binder contains either (i) a resin that undergoes volumetric shrinkage when it reacts per se (polymerization, cross-linking, or decomposition), (ii) a polymerizable monomer to form a resin, or (iii) a solvent along with the foregoing resin or polymerizable monomer.

Abstract: A two-color photodetector for detecting two different bands of infrared radiation is described. The photodetector includes either a diffractive resonant optical cavity that resonates at the two colors of interest, or a diffractive resonant optical cavity that resonates at the first color and a vertical resonant optical cavity that resonates at the second color. By placing materials that absorb only one of the two colors at the appropriate locations within the resonate structure, the resultant signals include little cross-talk due to the opposite color. The two-color photodetector finds use in applications covering a wide portion of the infrared spectrum.

Abstract: An electromagnetic wave detecting device which includes a semiconductor film that generates a charge upon induction by an electromagnetic wave, and an active matrix array for reading out the charge generated in the semiconductor film, detects the electromagnetic wave by a direct converting system. The electromagnetic wave detecting device has a characteristic that the active matrix array is formed by having a resin substrate as its base. Since resin has a less weight and a superior impact resistance than glass, it makes an active matrix substrate difficult to break, while improving portability and mobility.

Abstract: A radiation imaging device includes a scintillator, a cover and an imager substrate. A photodetector array comprising a plurality of photodetectors is s disposed on the imager substrate. The cover is hermetically bonded to the substrate with a sealant. The cover has outer sidewalls and a top side connecting the outer sidewalls. In attaching to the substrate, the cover is disposed on the imager substrate to surround the scintillator. A curable sealant is applied along the outer surface of the cover. The sealant is then cured to hermetically bond the cover to the substrate.

Abstract: A germanium gamma-ray detector contained in a vacuum insulated cryostat is provided. The present invention provides a low-cost, high-performance, and highly reliable cooling system for germanium detectors. Moreover, the present invention provides a germanium detector operating environment that meets all the requirements for optimum performance of such detectors incorporating said cooling system. A self-cleaning cooler includes a counter-current heat exchanger which is received within a cooler housing. A removable cryostat is provided for being carried by the cooler housing. A capsule cold finger provides the cooling path to germanium detector element. A centering spacer/isolator is provided for maintaining the position and supporting the weight of the detector in an end cap without conducting an excessive amount of heat into the detector. A capsule flange is provided to substantially close the volume within the end cap. The heat exchanger and the throttle capillary of the cooler cool the cold block.

Abstract: In a method and an apparatus for recording radiation image information of a subject on an electrostatic recording material, photoelectromotive force noise is reduced and stabilized. The apparatus comprises a switch 52 for switching voltage supply from a power supply 53 to a detector 10, a high voltage generator 62 for supplying a high voltage HV to a radiation source 61, and control means 70 for controlling light source control means 40. The control means 70 causes a control signal C2 input to the switch 52 to become LOW so that an electrode of a first electrode layer 11 and a stripe electrode 16 have the same potential. In this state, the control means causes a control signal C1 input to the light source control means 40 to become LOW and causes a planer light source 30 to emit EL light as pre-exposure light. Pre-reading in which this pre-exposure light is irradiated on a reading photoconductive layer 14 is carried out in this manner.

Abstract: Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts.

Abstract: An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the “electron-only” semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached.

Abstract: An active matrix substrate provided with a matrix of electrode wires, a plurality of thin film transistors (TFTs) individually formed at intersections of the matrix, and pixel electrodes connected to the electrode wires through the thin film transistors (TFTs) is laminated to a counter substrate provided with connecting electrodes by means of an anisotropic conductive bonding agent. The counter substrate is composed of 12 divided pieces which are tiled as panes.

Abstract: A two-dimensional image detector of the present invention includes: an active matrix substrate equipped with charge storage capacitors and TFTs; and an opposing substrate equipped with a semiconductor substrate. The two-dimensional image detector is formed by adhering the active matrix substrate and the opposing substrate to each other with an anisotropic conductive adhesive agent. With this structure, since a semiconductor layer is not required to be deposited on the active matrix substrate where the TFTs are already formed, it is possible to use CdTe, CdZnTe, etc. The use of CdTe, CdZnTe, etc. as a material of the semiconductor layer having photoconductivity allows the two-dimensional image detector to show good response and to deal with the dynamic images.

Abstract: A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.