Abstract: In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control, portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.

Abstract: Linear movement direction of the stage and the actual deflection direction of the electron beam deflected by the first command signal for deflecting the electron beam in the linear movement direction of the stage do not necessarily align with each other for reasons such as the disposition precision of the stage driving device, a lens system, and the deflecting device. Therefore, the first command signal output from the first command device is processed based on the angle between the linear movement direction of the stage driven by the stage driving device and the deflection direction of the electron beam deflected by the first command signal so that the deflection direction of the electron beam aligns with the linear movement direction of the stage. With this processed first command signal, the deflection direction of the electron beam can be changed (rotated) to align with the linear movement direction of the stage.

Abstract: The window-frame judgment unit judges that a section to be drawn has entered a window-frame area according to the main deflector data and the stage position information to output judgment signal. The main deflector calculator receives the main deflector data and calculates calculation data for driving a driving unit based on the main deflector data. The transfer controller detects output of the judgment signal and completion of drawing in the section under drawing to receive a transfer of the calculation data from the main deflector calculator and transfer the calculation data to the driving unit.

Abstract: Devices and methods are provided for generating laser-accelerated high energy polyenergetic positive ion beams that are spatially separated and modulated based on energy level. The spatially separated and modulated high energy polyenergetic positive ion beams are used for radiation therapy. In addition, methods are provided for treating patients in radiation treatment centers using therapeutically suitable high energy polyenergetic positive ion beams that are provided by spatially separating and modulating positive ion beams. The production of radioisotopes using spatially separated and modulated laser-accelerated high energy polyenergetic positive ion beams is also provided.

Abstract: A lithographic apparatus is presented that provides versatile processing time and accuracy selection. The apparatus includes a substrate holder configured to hold a substrate; a radiation system configured to condition a beam of radiation; a support structure configured to support a patterning device that imparts a desired pattern onto the beam of radiation; a projection system that projects the patterned beam onto a target portion of the substrate; and a selection system that selects one out of at least two different operational modes of the lithographic apparatus. The first operational mode is associated with performing a process within a first time period at a first level of accuracy and a second operational mode is associated with performing the process within a second time period at a second level of accuracy. The first time period is shorter than the second time period and the first level of accuracy is lower than the second level of accuracy.

Abstract: A microscope has a light source that emits light to illuminate a sample, a first wavelength selection member that selectively transmits the light from the light source, a light splitter that reflects the light from the first wavelength selection member to epi-illuminate the sample and transmits the light emitted from the sample, and a second wavelength selection member that selectively transmits the light transmitted through the light splitter. The light splitter is constituted of a transparent member and a dichroic mirror coat disposed on the transparent member. The dichroic mirror coat is constituted of a stacked layer that efficiently reflects light having a wavelength selected by the first wavelength selection member and a stacked layer that reflects light on a short wavelength side from the light selected by the first wavelength selection member, light on a long wavelength side, light of the same band, or combined light.

Abstract: A new sample plate handling apparatus for use with mass analysis, and methods for use the same have been developed. The sampling plate handling apparatus comprises a sample plate receiver which receives the sample plate in a first plane, a rotating device for rotating the sample plate from the first plane to a second plane, and a relocation device that relocates the sample plate in the second plane such that one of the samples on the sample plate is in the position desired for analysis by the mass analyzer. In one implementation, the relocation device can relocate the sample plate such that a beam of radiation that irradiates a sample on the sample plate emanates ionized particles that are substantially aligned with ion transfer optics of the mass analyzer.

Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

Abstract: A charged particle beam system and scanning control method capable of imaging, and possibly editing, a device under test (DUT). The charged particle beam system contains a charged particle beam generation unit, such as a focused ion beam (FIB) column, which emits a charged particle beam onto the DUT. Also included is a scan controller arrangement implementing a finite state machine to control the application of the charged particle beam onto the DUT according to a plurality of scanning control parameters. The scanning control parameters may describe one or more scan regions that are rectangular in shape. Further, the parameters may describe one or more scan regions describing other shapes by way of a bit-map. Similarly, a method for controlling the scanning of a charged particle beam that involves obtaining a set of scanning control parameters, and then directing the charged particle beam as specified by the scanning control parameters by way of a finite state machine, is disclosed.

Abstract: An object of this invention is to provide a charged particle beam apparatus that is capable of handling samples without adhering impurities onto the samples. In a scanning electron microscope in which a lubricant was coated on a sliding portion of a movable member that moves inside a vacuum chamber, a substance from which low molecular components were removed is used as the lubricant. It is thus possible to inhibit sample contamination and suppress the occurrence of defects in a process following measurement of the samples.

Abstract: A method of moving an object includes a step of fixing the object to an object-moving device, a step of moving the object to a prescribed position by the object-moving device, and a step of releasing the object from the object-moving device. The fixing step includes forming a deposit for fixation of the object to the object-moving device by applying a first corpuscular beam in a first gas to form a deposit. The releasing step includes etching the deposit by applying a second corpuscular beam in contact with a second gas.

Abstract: Ion source devices with controlled superposition of electrostatic and gas flow fields to effect rapid collisional cooling with improved ion collection and collimation, analytical apparatus comprising such ion source devices, and methods for use are presented.

Abstract: Embodiments of the present invention describe a MALDI (matrix-assisted laser desorption and ionization) sample plate body that includes a reusable sample plate and a sample plate adapter that are releasably coupled to one another. In one particular embodiment, the sample plate and the sample plate adapter are releasably coupled to one another to form the MALDI sample plate body by a latch formed by a spring-loaded hook within the sample plate adapter and a recess shaped to accept the hook within the sample plate. The MALDI sample plate body may be formed by aligning the sample plate with the sample plate adapter and coupling the sample plate to the sample plate adapter to releasably couple the sample plate to the sample plate adapter.

Abstract: The present invention is related to an apparatus and method for irradiating a product package, comprising a radiation source directing a radiation beam along a beam direction towards said product package, conveying means for transporting said product package past said radiation source along a transport path, and reflecting means located on at least one side of the plane formed by said beam direction and said transport path. By adjusting the distance and angle of the reflecting means to the conveyor and beam, and improved dose uniformity ratio is obtained.

Abstract: A method for scanning a specimen 105 with beams 102 of charged particles of a source group. Thereby, a plurality of target points 402 is scanned with a charged particle beam emitted by a source 106 and the same plurality of target points is scanned with at least one further charged particle beam emitted by at least one further source. Further, the charged particle beams from the source and the at least one further source are emitted on the same target point at different times. Additionally, a multiple charged particle beam source and a data feed system are provided. A source array 104 comprises at least one logical emitting unit 106, wherein patterning information is shifted in a shift circuit 140, and redundancy emitting units 106, wherein individual redundancy emitting units obtain patterning information from the shift register.

Abstract: The present invention provides an analysis of displacement by calculating the phase variance image P? (k, l) between Fourier transformed images of paired images S1 (n, m) and S2 (n, m) to determine the center of gravity of ? peak appearing on the invert Fourier transform image of the images. The present invention provides numerous advantages such as a precision of displacement analysis of a fraction of pixel to thereby allow to improve the precision of focal analysis, or reduced number of pixels required to achieve the same precision, evaluation of reliability of the analysis by using the ? peak intensity, influence of varying background reduced by using a phase variance component. The improved performance by the present invention allows any operator skilled or not to achieve a best focusing.

Abstract: One embodiment disclosed relates to a method for inspecting a substrate. The method includes exposing the substrate to an incident beam, inducing relative motion between the incident beam and the substrate, and detecting charged particles emitted from the substrate. The relative motion is such that the beam travels over a surface of the substrate along a substantially spiral shaped path.

Abstract: A combined surface topography and spectroscopic analysis instrument comprises a scanning tunnelling microscope tip (12); and a sample carrier (58) which supports a sample (10) so that a surface thereto to be analyzed is presented towards the tip (12). The sample carrier (58) and the tip (12) are relative movable to enable the distance between the tip (12) and the surface to be varied in use and the sample surface to be scanned in two dimensions by the tip (12). An electronic analyzer is positioned to detect electrons from the tip (12) which have been back-scattered off the sample surface. A voltage controller (59) enables selective operation of the tip (12) in a first voltage range in scanning tunnelling mode, to enable spatial resolution imaging of the sample surface, and in a second, higher, voltage range in electron field emission mode whereby to permit the electron analyzer to analyze the back-scattered electrons.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a rotation member rotatably affixed to the implantation chamber. Rotation of the rotation member with respect to the implantation chamber changes an implantation angle of the workpiece with respect to the portion of the ion beam beam line within the implantation chamber. The workpiece support structure further includes a translation member disposed within the implantation chamber, movably coupled to the rotation member and supporting the workpiece for linear movement along a path of travel. The translation member includes a linear motor.

Abstract: An actuator comprises a magnet yoke (10a, 10b) and a carrier member (2) movable relative to the magnet yoke. The magnet yoke (10a, 10b) has at least one permanent magnet (14) and the carrier member (20) is positioned in the magnetic field produced by this magnet. The carrier member (20) has an auxiliary magnetic member (28) that produces a relative bias force between the carrier member (20) and the magnet yoke (10a, 10b). The bias force will be used to compensate for a weight applied to the device and acts as a bearing with a very large compliance. The carrier member (2) also comprises a coil (26). Passing current through the coil (26) produces a Lorentz force for further control of the actuator; alternatively, the device provides a velocity transducer by sensing the EMF generated in the coil by relative motion of the carrier member (20) and magnet yoke (10a, 10b).

Abstract: A method and apparatus for monitoring an extraction electrode utilized in the implantation of charged particles (i.e., ions) on a semiconductor wafer. A signal may be generated from an encoder associated with the extraction electrode, wherein the signal comprises data indicative of charged particles attracted to and accelerated by the extraction electrode. The signal may then be analyzed either manually or automatically to determine if the extraction electrode is located at a position appropriate to attract and accelerate the charged particles to an acceleration tube for proper implantation thereof upon the semiconductor wafer. A main controller may be linked to the extraction electrode, wherein the main controller controls a location of the extraction electrode in proximity to the charged particles.

Abstract: A scattering target constituting an electron spin analyzer is supported by a scattering target-holding member made of a conductive material from the outside of the space formed by an accelerating electrode and an electrode supporter. Then, the scattering target-holding member is supported in insulation by an insulation supporting member made of an insulating material. Moreover, a guiding member is provided so as to cover the periphery of the insulation supporting member for guiding the scattering target, the scattering target-holding member and the insulation supporting member.

Abstract: A voice coil motor used in a positioning means associated with either a first object table or a second object table in which the coil is cooled with a cooling jacket in thermal contact with the coil, the cooling jacket comprising at least one channel for circulation of a cooling fluid, the or each channel being arranged such as to be substantially located in a portion of the cooling jacket adjacent to the coil, for use in a lithographic projection apparatus comprising: a radiation system for supplying a projection beam of radiation; a first object table for holding a mask; a second object table for holding a substrate; a projection system for imaging irradiated portions of the mask onto target portions of the substrate. The cooling jacket may be formed of a ceramic material and preferably is of a monolithic construction.

Abstract: The invention concerns a column for producing a focused particle beam comprising: a device (100) focusing particles including an output electrode (130) with an output hole (131) for allowing through a particle beam (A); an optical focusing device (200) for simultaneously focusing an optical beam (F) including an output aperture (230). The invention is characterised in that said output aperture (230) is transparent to the optical beam (F), while said output electrode (130) is formed by a metallic insert (130) maintained in said aperture (230) and bored with a central hole (131) forming said out-put orifice.

Abstract: A mask stage speed |Vm|, a wafer stage speed |Vw|, and an absolute value |&Dgr;S| of a beam deflection value are determined (step 101). Then, it is judged whether a stripe number is even or odd (step 108) and deflective directions of a mask stage, a wafer stage, and a wafer deflector are set in accordance with the above judgment result (steps 109 and 110). Then, the wafer stage and mask stage respectively start continuous movement (step 113) and divided patterns are exposed (step 115-119). It is judged whether all divided patterns are exposed (step 120). When all divided patterns are not exposed, the next divided pattern is exposed by adding a deflection value on a wafer corresponding to a beam width on a mask (step 121).

Abstract: A plate with substantially constant thickness is used to compensate for the residual distortion in the image projected by a high-quality projection lens for lithography. The two surfaces of the plate have an identical aspherical profile, whose shape has been calculated using the measured distortion map of the lithographic objective. The figuring process applied to the plate uses the principle of polishing in the presence of an elastic deformation, so as to achieve the desired aspherical shape on both sides.

Abstract: A process for manufacturing an electrostatic element for steering a charged particle beam. A cylindrical, non-conductive body having a bore therethrough is assembled with a cylindrical, conductive core also having a bore therethrough and sized to fit within the bore of the body. The core is secured within the bore of the body, and then longitudinally extending slots are cut completely through the core to create pole pieces that are electrically isolated from each other.

Abstract: An apparatus includes: a rasterizer which rasterizes a surface of the substrate into pixels and outputs gray level values, where the gray level values specify a proportion of a pixel that overlaps with the pattern; a buffer coupled to receive and store the gray level values from the rasterizer; a flash converter coupled to receive the gray level values from the buffer, where the flash converter outputs shape data that define a flash field; a dose value circuitry coupled to the rasterizer, where the dose value circuitry computes dose values associated with the shape data; a converter coupled to receive the shape data from the flash converter and associated dose values from the dose value circuitry, where the converter outputs signals that specify a shape of the flash field, duration of the flash field, and a position of the flash field on the substrate; and a charged particle beam column coupled to receive the signals from the converter, and which generates the flash field as specified by the signals from the

Abstract: Methods are disclosed for determining respective values of configurational and/or operational parameters of a system, such as a charged-particle-beam (CPB) optical system as used, e.g., in a CPB microlithography apparatus. Executing the methods provides an optimal combination of the parametric values for the system while preventing convergence to a local solution rather than an optimal solution. The methods are based on a genetic algorithm. For example, consider a subject system including six deflectors, each of which being energized with a respective current ratio and each of which producing a respective magnetic-field orientation. For each deflector, the respective values of each of these two parameters is regarded as a separate gene, yielding a total of 12 genes. Each different combination of the parameters is regarded as a species having a respective chromosome containing the 12 respective genes. A specified number of species is selected with random genes as initial values.

Abstract: One or more electron beam tubes are arranged to direct electron beams in air or other ambient gas toward a target object. The electron beams ionize air producing a plasma or glow discharge. An electric or magnetic field in the beam trajectory sustains the plasma by trapping secondary electrons formed by collisions of beam electrons with the ambient atmosphere. Target objects may be placed in the field for surface treatment, such as sterilization, or for thin film growth. In the latter case, the apparatus is enclosed in a housing and a reactive gas is introduced into the beam trajectory. The gas is one which is crackable by the electron beam or plasma, such as an organic silicon compound which would liberate silicon for combination with ionized oxygen to form silicon dioxide layers on a substrate.

Abstract: In accordance with the present invention, an ion implanter including a rotatable support disposed in an implantation chamber of an ion beam implanter for supporting a plurality of wafer workpieces. The rotatable support includes a hub adapted to be rotated about an axis of rotation substantially parallel to a direction of an ion beam beam line entering the implantation chamber. The rotatable support further includes a plurality of wafer support members adapted to be attached to the hub, each wafer support member adapted to support at least one of the wafer workpieces. Each wafer support member includes an attachment structure for affixing the support to the rotating member and a wafer support pad extending from the attachment structure and passing through the beam line as the hub rotates. The wafer support pad includes a wafer support surface facing the beam line that includes a concave portion.

Abstract: Permanent surface modification of polypropylene nonwoven fabrics is achieved through electron beam radiation induced chemical bonding. The electron beam energy levels suitable for such chemical bonding are between about 5 KeV to about 110 KeV at the surface of the fabric facing the electron beam radiation source. At these energy levels, chemical bonding, control of electron beam penetration and the formation of free radicals in the polypropylene nonwoven fabrics are achieved. Control of electron beam penetration produces free radical formation and chemical bonding at selective levels within the fabric as well as bonding of different chemicals asymmetrically to the same fabric with minimal, if any, loss of polymer fabric strength.

Abstract: Provided is the ability to selectively irradiate a designated irradiation target portion of a target material with a beam of electrons. Target material is moved at a substantially constant velocity in one direction along a path that is intersected by an electron beam. The electron beam is translated in a direction transverse to the direction of the target material movement to intersect the designated portion of the target. This enables the designated target portion, e.g., a target irradiation path, to be followed by the electron beam as the target material moves past the beam. Also provided is control of electron beam dose delivered to the designated irradiation target portion.

Abstract: An ion beam absorbing apparatus for an ion implanter comprises an ion absorber for absorbing ions in an ion beam generated by the ion implanter, and support means for supporting the ion absorber and adapted for connection with the ion implanter, so that when so connected, the ion absorber can intercept the ion beam and absorb ions not intercepted by a target to be implanted with beam ions. The support means is further adapted for supporting the ion absorber in a plurality of different positions which can be selected so that respective different parts of the ion absorber intercept the ion beam.

Abstract: Powders and aggregates are treated in pneumatic transfer as a thin layer moving at high velocity which electrons from a selfshielded electron beam processor of voltage less than or equal to 500 kilovolts.

Abstract: A charged particle beam exposure method which irradiates a charged particle beam on a substrate placed on a stage while continuously moving the stage and deflecting the charged particle beam by main deflector means and sub deflector means. The charged particle beam exposure method includes the steps of calculating stage moving information which describes an optimum expected locus of a stage moving speed with respect to a frame region based on a stage moving speed that enables exposure within each cell region within the frame region, by defining the frame region as being made up of a plurality of cell regions arranged in a moving direction of the stage within a drawable range in which the charged particle beam can be deflected by the main deflector means, and controlling a deflected position of the charged particle beam caused by the main deflector means by variably controlling the stage moving speed based on said stage moving information.

Abstract: A radiation sterilization conveyor unit for sterilizing biological products, prolonging shelf life of food stuff, decontamination of clinical waste and decontamination of microbiological products. A power unit, modulator, and an ultra-high frequency generator are connected via microwave waveguide elements to an electron injector, accelerator and beam scanning system. The injector, accelerator and beam scanning system are located in shielding made of cast iron or lead. A disk-shaped transporter is provided and extends in part in a cavity in the shielding. Products to be irradiated are placed on the disk-shaped transporter and the transporter is selectively rotated for placing the products in the field of accelerated electrons. The shielding and transporter block dangerous levels of ionizing radiation.

Abstract: The present invention features methods and apparatus for forming a plurality of tracks in a foil or film with high-energy charged particles by forming layers.

Abstract: A method and apparatus for controlling the delivered dose across a target area from an electron beam produced by a high energy, high power pulsed rf linear accelerator. Pulse width modulation as a function of scan position is applied to the rf drive pulses of the accelerator operated in a long pulse mode and fast feedback control is used to maintain uniform rf field intensity on an intra-pulse basis. In an alternative embodiment, rf drive pulses are inhibited as a function of scan position.

Abstract: An array of electron beam tubes is mounted on a conductive plate for projecting stripe-like electron beams through air onto a substrate beneath the plate. The tubes each have a narrow beam window formed by a very thin low-Z film layer, supported by silicon and sealing the tube against ambient pressure. Such windows produce low beam attenuation and allow low extraction voltages to be used, thereby reducing beam energy which would otherwise be lost by penetration through a surface to be treated. The stripe-like output electron beam segments may be formed into a linear beam track so that the entire widthwise extent of a surface, such as a sheet or web, may be treated by electron beam irradiation or the beam segments may be formed into any desired composite beam pattern. In another embodiment the stripe-like output beam segments may be arranged in an array to treat a circular circumferential surface, such as a cable.

Abstract: A charged particle beam exposure apparatus employs a main deflector made of electromagnetic coils and a subdeflector made of electrostatic deflection electrodes. An exposure method used for this apparatus is capable of shortening a wait time of the main deflector. The main deflector deflects a charged particle beam in a direction X, while the subdeflector deflects the beam around the deflecting position of the main deflector to expose an object to the beam. An area to be exposed on the object is divided into thin subfields such that the width, in an X-axis direction of each subfield, is approximately 1/3 the length in a Y-axis direction of the same.

Abstract: A method of irradiating a continuously-running strip with energy beams. Scanning the width of continuously-running strip positions energy-beam irradiating devices along the width of the strip. Allocation of scanning regions along the width of the strip corresponding to respective energy-beam irradiating devices is determined. When an edge deviation or strip wind is detected by a strip-edge detector upstream of the energy-beam irradiating devices, the strip regions to be scanned are adjusted. If the amount of strip wind exceeds the limits of the scannable energy-beam irradiating devices, neighboring irradiating devices are re-oriented, all in response to upstream strip wind detection.

Abstract: Wafer disk holds wafers in position by centrifugal force and its rotating shaft is supported by a bearing capable of magnetic levitation that has a thrust bearing and radial bearings. An annular groove providing a heat radiating zone is formed under the wafer receiving faces of the wafer disk. A cooling plate cooled to a temperature not exceeding the temperature of liquid nitrogen is inserted into the groove in a contactless manner so that the wafer disk is cooled by heat radiation. In the absence of any area of physical contact in the mechanisms for axially supporting and cooling the wafer disk, ions can be implanted in low dose into wafers on the fast rotating disk while improving the quality of wafers after implantation. Further, no triboelectricity will develop, thereby contributing to an improvement in the precision of ion beam current measurement.

Abstract: A charged particle beam exposure apparatus is provided with a source for irradiating a charged particle beam on an object which has a position detection mark provided thereon and is carried on a movable stage, a deflection part for deflecting the charged particle beam based on deflection signals, a first detection part for detecting the position detection mark of the object, a second detection part for detecting a stage position of the object and for outputting a position detection signal, a moving part for moving the stage which carries the object, and a control unit for controlling inputs and outputs of the source, the deflection part, the first and second detection parts and the moving part.

Abstract: Disclosed is an electron beam lithography apparatus comprising means for emitting an electron beam and directing it toward and onto a workpiece, means for deflecting and turning on-off the electron beam so as to form a predetermined pattern on the workpiece, a vacuum column disposed to expose the electron beam to a vacuum, a workpiece stage including a first table supporting the workpiece and a second table supporting the first table, means for moving the first table in one of the X-axis and Y-axis directions and moving the second table in the other direction, a vacuum workpiece chamber disposed to make vacuum communication with the vacuum column and to accommodate both of the workpiece and the workpiece stage, and means for supporting both of the workpiece stage and the workpiece moving means, the vacuum workpiece chamber being partly opened, and the supporting means being detachably mounted on the opening of the vacuum workpiece chamber.

Abstract: A method for writing a pattern on a surface of an object by a focused electron beam with a minimized distortion of the electron beam comprises the steps of dividing the surface of the object into a plurality of parallel bands, moving the object in a direction perpendicular to the bands with a predetermined speed, achieving an exposure of the device pattern on an individual, band by band basis while moving the object with the predetermined speed. The predetermine speed is optimized with respect to an exposure interval representing a time interval in which the exposure of the band is possible.

Abstract: A charged particle beam exposure method is used for exposing a pattern on an exposing surface using a charged particle beam which has a rectangular cross sectional shape and is deflected to pass through a stencil mask which has a plurality of apertures for forming the rectangular cross sectional shape of the charged particle beam into predetermined stages. The method includes the steps of storing, prior to an exposure process, deflection data indicative of a deflection quantity of the charged particle beam for forming the rectangular cross sectional shape of the charged particle beam into a shape of a desired size. In addition, the method includes detecting, after start of the exposure process, a position of the charged particle beam on the stencil mask relative to the predetermined aperture.

Abstract: An apparatus for conducting surface characterizations of sample materials comprises an enclosure defining first and second substantially isolated operating chambers or regions. The operating regions are separated by narrow channels, and are preferably differentially pumped. An elongate substrate extends between the first and second regions. During operation, a sample surface to be studied is prepared on the substrate in the first region, is transported into the second region, and is analyzed thereat. In a preferred embodiment a continuous loop and pulley arrangement is provided, for the substrate. Also, for a preferred embodiment the first region is divided into first and second isolated chambers, through which the substrate is extended. A method is provided, whereby a surface can be prepared and analyzed. According to the method, the sample is applied to a substrate in a first region, and the substrate is transported into a second isolated region, through an elongate narrow channel.

Abstract: A method for irradiating a workpiece, such as a strand, by charged particle, e.g.

Abstract: An array of electron beam tubes is mounted on a conductive plate for projecting strip-like electron beams through air onto a substrate beneath the plate. The tubes each have a narrow beam window formed by a very thin low-Z film layer, supported by silicon and sealing the tube against ambient pressure. Such windows produce low beam attenuation and allow low extraction voltages to be used, thereby reducing beam energy which would otherwise be lost by penetration through a surface to be treated. The stripe-like output electron beam segments may be formed into a linear beam track so that the entire widthwise extent of a surface, such as a sheet or web, may be treated by electron beam irradiation or the beam segments may be formed into any desired composite beam pattern. In another embodiment the stripe-like output beam segments may be arranged in an array to treat a circular circumferential surface, such as a cable.