Abstract: The positive electrode material for lithium ion secondary batteries includes a mixture including a positive electrode active material in which a length of a longest side of a primary particle is 1 nm or more and 1000 nm or less and a NASICON-type compound in which a length of a longest side of a primary particle is 1 nm or more and 1000 nm or less.

Abstract: An ESD protection circuit including a TFT arranged between a to-be-protected signal line and a discharging line is provided, wherein a length direction of a channel of the TFT is parallel to an extension direction of the to-be-protected signal line. A display panel and a display device are also provided.

Abstract: The invention provides a lighting device configured to provide white lighting device light, the lighting device comprising (i) a light source, configured to provide blue light source light, and (ii) a luminescent material element, configured to absorb at least part of the blue light source light and to convert into luminescent material light, wherein the luminescent material element comprises a luminescent material which consists for at least 80 wt. % of a M2-2xEu2xSi5-yAlyOyN8-y phosphor, wherein M comprises one or more of Mg, Ca, Sr, Ba, with a molar ratio of (Mg+Ca+Sr)/(Ba)?0.1, wherein x is in the range of 0.001-0.02, wherein y is in the range of ?0.2, and wherein the white lighting device light comprises said blue light source light and said luminescent material light.

Abstract: In one aspect, the disclosure relates to thermoelectric ceramic oxide compositions comprising a CaMnO3 ceramic. In a further aspect, the disclosed thermoelectric ceramic oxide compositions can dramatically increase the energy conversion efficiency of thermoelectric through a combination of modifying the chemistry of precursor materials, and simultaneously introducing a metal oxide liquid phase during sintering. In a further aspect, the present disclosure pertains to thermoelectric ceramic oxide compositions comprising a metal doped CaMnO3 having with a metal oxide grain boundary phase; wherein the metal is selected from group 13, group 14, group 15, group 16, or a rare earth element. In a still further aspect, the disclosure relates to methods for making the thermoelectric ceramic oxide materials. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: Provided are: an oxide sintered material including an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, wherein the roundness of crystal particles composed of the ZnWO4 crystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.

Abstract: A voltage nonlinear resistor according to the present invention includes a sintered body consisting essentially of zinc oxide and containing bismuth, antimony, and boron as accessory components. The accessory components are bismuth oxide of 1.5 to 2.5 mol %, antimony oxide of 1 to 2 mol %, and boron oxide of 0.3 mol % or less in terms of oxides.

Abstract: The present invention relates to a composition for forming a solar cell electrode, comprising: silver (Ag) powder; a glass frit comprising silver (Ag) and tellurium (Te) elements; and an organic vehicle, wherein the glass frit has a mole ratio of 1:01 to 1:25 of Ag to Te. The solar cell electrode produced from the composition has excellent fill factor and conversion efficiency as contact resistance (Rc) and series resistance (Rs) are minimized.

Abstract: A composition for solar cell electrodes and electrodes fabricated using the same. The composition includes a silver (Ag) powder; a glass frit containing about 0.1 mole % to about 50 mole % of elemental silver; and an organic vehicle, wherein the elemental silver derives from a silver halide (Ag—X). The composition introduces a glass frit including a silver halide to enhance contact efficiency between electrodes and a silicon wafer, and solar cell electrodes prepared from the composition have minimized contact resistance (Rc), specific contact resistivity, and serial resistance (Rs), thereby exhibiting excellent conversion efficiency.

Abstract: Radiofrequency and other electronic devices can be formed from textured hexaferrite materials, such as Z-phase barium cobalt ferrite Ba3Co2Fe24O41 (Co2Z) having enhanced resonant frequency. The textured hexaferrite material can be formed by sintering fine grain hexaferrite powder at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The textured hexaferrite material can be used in radiofrequency devices such as circulators or telecommunications systems.

Abstract: The invention relates to the use of a material having a spinel ferrite/iron monoxide structure as a sensitive material in the form of a thin film for the bolometric detection of infrared radiation, the chemical composition of said structure, excluding doping agents that may be present, having empirical formula (I): (Fe1?zMz)xO, where x is strictly less than 1 and strictly greater than 0.75. The invention also relates to a bolometric device for infrared radiation detection and infrared imaging, comprising at least one sensor provided with a sensitive element in the form of a thin film as defined above.

Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])??0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])?2.28×[Zn]/([Zn]+[Sn])?2.01 (2) [In]/([In]+[Zn]+[Sn])?1.1×[Zn]/([Zn]+[Sn])?0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

Abstract: Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

Abstract: This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

Abstract: A process for densifying a composite material is provided. In some instances, the process can reduce stress in a sintered component such that improved densification and/or properties of the component is provided. The process includes providing a mixture of a first material particles and second material particles, pre-sintering the mixture at a first pressure and a first temperature in order to form a pre-sintered component, and then crushing, grinding, and sieving the pre-sintered component in order to form or obtain a generally uniform composite powder. The uniform composite powder is then sintered at a second pressure and a second temperature to form a sintered component, the second pressure being greater than the second pressure.

Abstract: A technique capable of forming an oxide semiconductor target with a high quality in a low cost is provided. In a step of manufacturing zinc tin oxide (ZTO target) used in manufacturing an oxide semiconductor forming a channel layer of a thin-film transistor, by purposely adding the group IV element (C, Si, or Ge) or the group V element (N, P, or As) to a raw material, excessive carriers caused by the group III element (Al) mixed in the step of manufacturing the ZTO target are suppressed, and a thin-film transistor having good current (Id)-voltage (Vg) characteristics is achieved.

Abstract: The present disclosure is directed to composite or articles for protective clothing, which include an anti-static layer. The antistatic layer can 1), include an antistatic agent comprising an electronically conductive material, and the antistatic layer can have a visible light transmission of at least 70%; 2) the anti-static layer can have a surface electrical resistivity (SER), and/or a water electrode resistivity (WER) of no greater than 1011 ohms/square and a visible light transmission of at least 70%; or 3) the anti-static layer has an electrical resistivity, measured in ohms/square, which varies by no more than 1.5 order of magnitude over a range of relative humidity of 5% to 95%, and a visible light transmission of at least 70%.

Abstract: The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

Abstract: In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.

Abstract: Disclosed herein is a ZnO-based varistor composition including zinc oxide (ZnO) as a main component and a calcium (Ca)-containing compound as an accessory component. The varistor composition provides excellent electrostatic discharge (ESD) characteristics because it has excellent physical properties, such as a nonlinear coefficient, a clamping voltage ratio, a surge absorbance and the like, and, particularly, does not include Bi2O3. Further, the varistor composition provides high work safety because it does not include Sb2O3 that is regulated for environmental purposes. Further, the varistor composition can reduce the manufacturing cost of a varistor because it does not Pr-based components that require high-temperature sintering and increase the manufacturing cost of a varistor. Particularly, the varistor composition has a low clamping voltage as well as a low capacitance.

Abstract: A negative electrode active material for an electric device. The negative electrode active material including an alloy having a composition formula SixTiyZnz, where (1) x+y+z=100, (2) 38?x<100, (3) 0<y<62, and (4) 0<z<62 in terms of mass percent.

Abstract: A negative electrode active material for an electric device, including an alloy having a composition formula SixZnyAlz, where x++y=100 , 26?x?47, 18?y?44, and 22?z?46 are satisfied.

Abstract: The present invention provides an electrochromic nanocomposite film. In an exemplary embodiment, the electrochromic nanocomposite film, includes (1) a solid matrix of oxide based material and (2) transparent conducting oxide (TCO) nanostructures embedded in the matrix. In a further embodiment, the electrochromic nanocomposite film farther includes a substrate upon which the matrix is deposited. The present invention also provides a method of preparing an electrochromic nanocomposite film.

Abstract: Disclosed are inorganic nanoparticles comprising a body comprising cadmium and/or zinc crystallized with selenium, sulfur, and/or tellurium; a multiplicity of phosphonic acid ligands comprising at least about 20% of the total surface ligand coverage; wherein the nanocrystal is capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the maximum absorbance wavelength of the first electromagnetic region is different from the maximum emission wavelength of the second electromagnetic region, thereby providing a Stokes shift of at least about 20 nm, wherein the second electromagnetic region comprises an at least about 100 nm wide band of wavelengths, and wherein the nanoparticle exhibits has a quantum yield of at least about 10%. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table, and materials produced by the process. In an embodiment, the process includes effecting conversion of a nanoparticle precursor composition comprising group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. Other embodiments include a process for fabricating a thin film including nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table as well as a process for producing a printable ink formulation including the nanoparticles.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification of the semiconductor single crystal in a conical or tapered portion of the crucible. Dopant may be partially added in advance into the crucible, with the remainder added into the semiconductor melt as described. Type III-V semiconductor single crystals or wafers having a diameter of at least about 100 mm, can be prepared having an electrical conductivity of at least about 250 Siemens/cm, and/or an electric resistivity of at most about 4×10?3 ?cm, and/or a significantly improved ratio of hall mobility to charge carrier concentration.

Abstract: Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a metal with an electronegativity lower than zinc.

Abstract: A material and method for producing mesostructured materials with multiple functionalities that are independently adjustable and collectively optimizable is provided. The method uses a series of discrete synthesis steps under otherwise mutually incompatible conditions, e.g., from acidic, alkaline, and/or non-aqueous solutions, allows different functionalities to be introduced to the materials and optimized. To illustrate the method, cubic mesoporous silica films were prepared from strongly acidic solutions that were separately functionalized under highly alkaline conditions to incorporate hydrophilic aluminosilica moieties and under non-aqueous conditions to introduce perfluorosulfonic-acid surface groups.

Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.

Abstract: The present invention relates to a transparent, electrically conductive floor care composition, in particular for antistatic flooring, which is distinguished by the fact that it comprises one or more conductive pigments.

Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Abstract: A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2?=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.

Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Abstract: A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions.

Abstract: A particulate mixture which can be used as a precursor of lithium transition metal silicate-type compound of small particle size and low crystallinity, is provided. It is a mixture of silicon oxide particulates, transition metal oxide particulates, and lithium transition metal silicate particulates, and its powder X-ray diffraction measurement shows diffraction peaks near 2?=33.1° and near 2?=35.7°, and said silicon oxide particulates and said transition metal oxide particulates are amorphous, and said lithium transition metal silicate particulates are in a microcrystalline or amorphous state.

Abstract: A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.

Abstract: A process for making a corrosion-resistant metal component. The process having the steps of: combining water, at least one zinc phosphate compound and at least one chromium compound, being chromium (III) or chromium (IV) compounds, to form a first solution; separately combining at least one silicate compound with water to form a second solution; combining the first solution with the second solution such as to form a mixed aqueous solution; optionally combining the mixed aqueous solution with at least one acrylic resin to form a coating mixture; and, applying the coating mixture to a metal substrate having a zinc or zinc-alloy surface to form a coating on the metal substrate, the coating providing chemical resistance for at least 150 hours in accordance with ASTM B 117 standards where the zinc or zinc-alloy coating of the metal substrate has a weight of 0.04 oz/ft2 (12.20 g/m2).

Abstract: A composite oxide sintered body includes In2Ga2ZnO7 having a homologous crystal structure, and has a relative density of 90% or more, and an average crystal grain size of 10 ?m or less.

Abstract: A phosphor includes semiconductor nanoparticles formed of compound semiconductor, and conductive transparent compounds. The semiconductor nanoparticles may be dispersed in or on the conductive transparent compounds. The resistivity of the conductive transparent compounds is preferably less than or equal to 10 ?cm.

Abstract: The present invention relates to a fluorescent powder mixture, a manufacturing method for the same, and a corresponding liquid crystal display device. The fluorescent powder mixture is a mixture of a conductive powder and a fluorescent powder, wherein the conductive powder is aluminum zinc oxide, gallium zinc oxide, or indium tin oxide. The fluorescent powder mixture, the manufacturing method for the same, and the corresponding liquid crystal display device of the present invention increase the conductivity of the fluorescent powder, and further weaken the electron enrichment phenomenon on the surface of the fluorescent powder, so as to increase the illumination performance of the fluorescent powder.

Abstract: The sulfide has the following composition, and the photoelectric element uses the sulfide. (1) The sulfide contains Cu, Zn, and Sn as a principal component. (2) When x is a ratio of Cu/(Zn+Sn), y is a ratio of Zn/Sn (x and y being atomic ratios), and the composition of the sulfide is represented by the (x, y) coordinates, with the points A=(0.78, 1.32), B=(0.86, 1.32), C=(0.86, 1.28), D=(0.90, 1.23), E=(0.90, 1.18), and F=(0.78, 1.28), the composition (x, y) of the sulfide is on any one of respective straight lines connecting the points A?B?C?D?E?F?A in that order, or within an area enclosed by the respective straight lines.

Abstract: A transparent conductive film which is an indium zinc oxide film comprising In2O3 crystals, and has an X-ray diffraction peak using a Cuk? ray that appears within at least one area selected from areas ranging from 2?=35.5° to 37.0°, 39.0° to 40.5° and 66.5° to 67.8°, wherein the peak intensities of peaks that appear within areas ranging from 2?=30.2° to 30.8° and 54.0° to 57.0° are 20% or less of the peak intensity of the main peak.

Abstract: A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 ?m, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.

Abstract: A voltage nonlinear resistor is made of a sintered body that mainly includes zinc oxide grains, spinel grains including zinc and antimony as main ingredients, and a bismuth oxide phase, in which the bismuth oxide phase includes at least one of alkali metals selected from the group of potassium and sodium at a ratio in the range of 0.036 at % or higher and 0.176 at % or lower. The voltage nonlinear resistor has good voltage nonlinearity and loading service life characteristics, and can be used for a lightning arrester.

Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation and subsequently compacting by charging the granule into a mold followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Abstract: The present technology is able to provide a solid electrolyte cell that uses a positive electrode active material which has a high ionic conductivity in an amorphous state, and a positive electrode active material which has a high ionic conductivity in an amorphous state. The solid electrolyte cell has a stacked body, in which, a positive electrode side current collector film, a positive electrode active material film, a solid electrolyte film, a negative electrode potential formation layer and a negative electrode side current collector film are stacked, in this order, on a substrate. The positive electrode active material film is made up with an amorphous-state lithium phosphate compound that contains Li; P; an element M1 selected from Ni, Co, Mn, Au, Ag, and Pd; and O, for example.

Abstract: A coating liquid for forming a metal oxide thin film, the coating liquid including: an inorganic indium compound; at least one of an inorganic magnesium compound and an inorganic zinc compound; and a glycol ether.