Abstract: Focusing on zinc oxide itself, which is a main raw material for a zinc oxide varistor (laminated varistor), a predetermined amount of additive is added to a zinc oxide powder having crystallite size of 20 to 100 nm, particle diameter of 20 to 110 nm found using a specific area BET method, untamped density of 0.60 g/cm3 or greater, and tap density of 0.80 g/cm3 or greater. This allows a zinc oxide sintered body to secure uniformity, high density, and high electric conductivity, resulting in a zinc oxide varistor with high surge resistance, capable of downsizing and cost reduction. Moreover, addition of aluminum (Al), as a donor element, to the zinc oxide powder allows control of sintered grain size in conformity with the aluminum added amount and baking temperature, and also allows adjustment of varistor voltage, etc.

Abstract: Focus is on zinc oxide itself, which is a base material for a zinc oxide varistor (laminated varistor), wherein specified quantities of additives are added to a zinc oxide powder having a crystallite size of 20 to 50 nm, grain diameter of 15 to 60 nm found using the specific surface area BET method, untamped density of 0.38 to 0.50 g/cm3, and tap density of 0.50 to 1.00 g/cm3. This allows securing of uniformity, high compactness, and high electrical conductivity of a zinc oxide sintered body, and provision of a zinc oxide varistor having high surge resistance.

Abstract: Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 ?m or less or a maximum height Ry of 10 ?m or less.

Abstract: Alloys comprised of a refined microstructure, ultrafine or nano scaled, that when reacted with water or any liquid containing water will spontaneously and rapidly produce hydrogen at ambient or elevated temperature are described. These metals, termed here as aluminum based nanogalvanic alloys will have applications that include but are not limited to energy generation on demand. The alloys may be composed of primarily aluminum and other metals e.g. tin bismuth, indium, gallium, lead, etc. and/or carbon, and mixtures and alloys thereof. The alloys may be processed by ball milling for the purpose of synthesizing powder feed stocks, in which each powder particle will have the above mentioned characteristics. These powders can be used in their inherent form or consolidated using commercially available techniques for the purpose of manufacturing useful functional components.

Abstract: An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]?40 atomic %, [In]?15 atomic %, [Sn]?4 atomic % are satisfied.

Abstract: An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains Ga2In6Sn2O16, ZnGa2O4, and InGaZnO4. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]?37 atomic %, [Sn]?15 atomic %, and [Ga]/([In]+[Zn])?0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.

Abstract: A ceramic material, a varistor and methods for forming a ceramic material and a varistor are disclosed. In an embodiment, a ceramic material includes ZnO as a main component and additives selected from the group consisting of an Al3+-containing solution, a Ba2+-containing solution, and at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Sb, Co, Mn, Ni, Y, and Cr.

Abstract: The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.

Abstract: Provided is a zinc oxide sputtering target, which can effectively suppress the occurrence of break or crack in the target during sputtering to enable production of a zinc oxide transparent conductive film with high productivity. The zinc oxide sputtering target is composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more.

Abstract: Disclosed herein is a composition of a sensor element, a temperature sensor having the composition of the sensor element and a method of manufacturing the temperature sensor. The sensor element composition comprising Y2O3, Al2O3, MnO2, NiO and Fe2O3, and further comprising ZrO2 and a temperature sensor comprising the same. The method comprising: weighing the composition for a sensor element; mixing the composition; calcining the mixture at about 1000° C.˜1400° C. for 30 min˜5 hrs; pulverizing the calcined mixture to obtain powder; disposing the powder type mixture into a mold; inserting in parallel a plurality of lead wires into the powder type mixture; pressure molding the powder type mixture; and sintering the pressure molded material at about 1300° C.˜1500° C. for 30 min˜5 hrs.

Abstract: An electric component assembly comprising a semiconductor component (1) and a carrier is specified, wherein the carrier contains a highly thermally conductive ceramic and is connected to a varistor body. Heat from the semiconductor component can be at least partially dissipated to the carrier (3) by means of the varistor body.

Abstract: The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.

Abstract: The present invention discloses a method for producing a positive electrode active material for a lithium secondary battery constituted by a lithium-nickel-cobalt-manganese complex oxide with a lamellar structure, the method including: (1) a step of preparing a starting source material for producing the complex oxide including a lithium supply source, a nickel supply source, a cobalt supply source, and a manganese supply source; (2) a step of pre-firing the starting source material by heating at a pre-firing temperature that has been set to a temperature lower than 800° C. and higher than a melting temperature of the lithium supply source; and (3) a step of firing the pre-fired material obtained in the pre-firing step by raising a temperature to a temperature range higher than the pre-firing temperature.

Abstract: The present disclosure is directed to composite or articles for protective clothing, which include an anti-static layer. The antistatic layer can 1), include an antistatic agent comprising an electronically conductive material, and the antistatic layer can have a visible light transmission of at least 70%; 2) the anti-static layer can have a surface electrical resistivity (SER), and/or a water electrode resistivity (WER) of no greater than 1011 ohms/square and a visible light transmission of at least 70%; or 3) the anti-static layer has an electrical resistivity, measured in ohms/square, which varies by no more than 1.5 order of magnitude over a range of relative humidity of 5% to 95%, and a visible light transmission of at least 70%.

Abstract: The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.

Abstract: The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-?, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and ? denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a?b?c, conditions that 0.41727 nm?a, b, c?0.42716 nm and a/c?0.98 are satisfied.

Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.

Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.

Abstract: Provided herein are nanofibers and processes of preparing nanofibers. In some instances, the nanofibers are metal and/or ceramic nanofibers. In some embodiments, the nanofibers are high quality, high performance nanofibers, highly coherent nanofibers, highly continuous nanofibers, or the like. In some embodiments, the nanofibers have increased coherence, increased length, few voids and/or defects, and/or other advantageous characteristics. In some instances, the nanofibers are produced by electrospinning a fluid stock having a high loading of nanofiber precursor in the fluid stock. In some instances, the fluid stock comprises well mixed and/or uniformly distributed precursor in the fluid stock. In some instances, the fluid stock is converted into a nanofiber comprising few voids, few defects, long or tunable length, and the like.

Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.

Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

Abstract: A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having larger Ga and Zn contents than those in surrounding structures.

Abstract: The present invention concerns a device comprising (i) a composite material comprising (1) a plurality of conductive or semiconductive nanotubes, and (2) a matrix arranged between these nanotubes and (ii) means allowing said composite material to be subjected to an electric field. The present invention also concerns the uses of said device in particular to defoul or to modify a composite material and to electroporate at least one cell.

Abstract: A negative electrode active material for an electric device. The negative electrode active material including an alloy having a composition formula SixTiyZnz, where (1) x+y+z=100, (2) 38?x<100, (3) 0<y<62, and (4) 0<z<62 in terms of mass percent.

Abstract: The paste composition for forming a back electrode of solar cell 10 provided by the present invention contains, as solids, an aluminum powder, a glass powder and a composite powder composed of a particulate composite of a metal oxide with a silicon-containing organic or inorganic compound. This composite powder is contained in an amount of at least 0.01 mass % but less than 0.45 mass % given 100 mass % as the total of the composite powder, the aluminum powder and the glass powder.

Abstract: A negative electrode active material for an electric device, including an alloy having a composition formula SixZnyAlz, where x++y=100 , 26?x?47, 18?y?44, and 22?z?46 are satisfied.

Abstract: A process of preparing a zinc chalcogenide includes providing a solution of 8-hydroxyquinoline; a zinc precursor; and a reaction solvent; isolating a precipitate from the solution; and calcining the precipitate to form the zinc chalcogenide. Additionally, a polymer composite may include a polymer, bis(8-hydroxyquinolinato)zinc, and elemental sulfur or bis(8-hydroxyquinolinato)zM, wherein M is a metal ion and the value of z is equivalent to the oxidation state of the metal ion.

Abstract: An electrolyte composition containing an ionic liquid and conductive particles, an electrolyte composition containing an ionic liquid and oxide semiconductor particles and optionally containing conductive particles, and an electrolyte composition containing an ionic liquid and insulating particles are provided. Furthermore, a photoelectric conversion element comprising: a working electrode, the working electrode comprising an electrode substrate and an oxide semiconductor porous film formed on the electrode substrate and sensitized with a dye; a counter electrode disposed opposing the working electrode; and an electrolyte layer made of these electrolyte compositions is provided.

Abstract: An active material comprises a core particle containing LiCo(1-x)MxO2 and/or Li(Mn(1-y)My)2O4, and a coating part covering at least part of a surface of the core particle, while the coating part contains LiVOPO4. Here, M is at least one element selected from the group consisting of Al, Mg, and transition elements, 0.95?x?0, 0.2?y?0, and V in LiVOPO4 may partly be substituted by at least one element selected from the group consisting of Ti, Ni, Co, Mn, Fe, Zr, Cu, Zn, and Yb.

Abstract: Disclosed are inorganic nanoparticles comprising a body comprising cadmium and/or zinc crystallized with selenium, sulfur, and/or tellurium; a multiplicity of phosphonic acid ligands comprising at least about 20% of the total surface ligand coverage; wherein the nanocrystal is capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the maximum absorbance wavelength of the first electromagnetic region is different from the maximum emission wavelength of the second electromagnetic region, thereby providing a Stokes shift of at least about 20 nm, wherein the second electromagnetic region comprises an at least about 100 nm wide band of wavelengths, and wherein the nanoparticle exhibits has a quantum yield of at least about 10%. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A semiconductor oxide ink composition, a method of manufacturing the composition, and a method of manufacturing a photoelectric conversion element are provided. The semiconductor oxide ink composition for inkjet printing comprises a semiconductor oxide and a solvent, wherein the semiconductor oxide comprises 0.1 to 20 parts by weight relative to 100 parts by weight of the total composition.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: A practical and environmentally-friendly method, i.e. the high temperature-mechanical mixing by using an internal mixing device and a two-roll open milling device is used to produce the carbon blacks-free electrically conductive sulfur-vulcanised rubber blends of solid poly(butadiene-co-acrylonitrile) and solid sulfonic acid doped polyaniline. The addition of sulfur vulcanization system does not affect the electrical properties of the vulcanised blends. All vulcanised blends prepared by using this method show useful electrical conductivities up to the order of 10?2 S/cm, good tensile strengths up to 18.0 MPa and colorable with the addition of a whitening agent. As a result, they have good potential to be used for manufacturing any antistatic products, electrostatic discharge or dissipative products and electromagnetic or radio frequency interferences shielding products.

Abstract: An electrode for an energy store, in particular for a lithium-ion battery. To achieve a particularly good and long-term stable capacitance, the electrode includes an active material, optionally a binder, optionally a conductive additive, and a sorption agent; intermediate stages of the active material arising during a charging and/or discharging procedure of the energy store may be immobilized by the sorption agent. Furthermore, also described is a method for manufacturing an electrode for an energy store, and the use of a sorption agent for manufacturing an electrode for an electrochemical energy store.

Abstract: Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

Abstract: A ZnO deposition material to be used for forming a transparent conductive film is composed of a ZnO pellet made of ZnO powder having a ZnO purity of 98% or more. The pellet includes one or more kinds of elements selected from the group consisting of Y, La, Sc, Ce, Pr, Nd, Pm and Sm. The ZnO pellet is polycrystal or monocrystal. The ZnO film formed by a vacuum film forming method employing the ZnO deposition material as a target material can exhibit excellent conductivity. The vacuum film forming method is preferably an electron beam vapor deposition method, an ion plating method or a sputtering method.

Abstract: The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of Ga2O3, Al2O3, SiO2 and ZnO according to the following percentage by mass: 0.5%˜10% of Ga2O3, 0.5%˜5% of Al2O3, 0.5%˜1.5% of SiO2, and the residue of ZnO; (2) sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2 Pa-5 Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15 sccm˜25 sccm, adopting a sputtering power of 40 W˜200 W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film.

Abstract: A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 ?m, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.

Abstract: A transparent conductive film which is an indium zinc oxide film comprising In2O3 crystals, and has an X-ray diffraction peak using a Cuk? ray that appears within at least one area selected from areas ranging from 2?=35.5° to 37.0°, 39.0° to 40.5° and 66.5° to 67.8°, wherein the peak intensities of peaks that appear within areas ranging from 2?=30.2° to 30.8° and 54.0° to 57.0° are 20% or less of the peak intensity of the main peak.

Abstract: The present invention provides: a method of preparing a coating ink for forming a zinc oxide electron transport layer, comprising mixing zinc acetate and a wetting agent in water or methanol; a coating ink comprising zinc acetate and a wetting agent in aqueous solution or methanolic solution; a method of preparing a zinc oxide electron transporting layer, which method comprises: i) coating a substrate with the coating ink of the present invention to form a film; ii) drying the film; and iii) heating the dry film to convert the zinc acetate substantially to ZnO; a method of preparing an organic photovoltaic device or an organic LED having a zinc oxide electron transport layer, the method comprising, in this order: a) providing a substrate bearing a first electrode layer; b) forming an electron transport layer according to the following method: i) coating a coating ink comprising an ink according to the present invention to form a film; ii) drying the film; iii) heating the dry film such that the zinc acetate i

Abstract: A paste for solar cell electrodes and a solar cell using the same, the paste including a conductive powder; glass frit; an organic vehicle; and metal oxide particles, the metal oxide particles having a nanometer scale particle size distribution having an average particle diameter (D50) of about 15 nm to about 50 nm and a micron scale particle size distribution having an average particle diameter (D50) of about 0.1 ?m to about 2 ?m.

Abstract: The present invention relates to semiconducting pigments based on flake-form substrates which have a doped tin dioxide layer on the surface and to the use of the pigments in paints, coatings, printing inks, plastics, security applications, floorcoverings, films, formulations, ceramic materials, glasses, paper, for laser marking, in thermal protection, in dry preparations, in pigment preparations and in particular as varistor pigment.

Abstract: According to one embodiment, an electrode material for a battery includes a tungsten oxide powder or a tungsten oxide composite powder provided with a coating unit containing at least one selected from a metal oxide, silicon oxide, a metal nitride, and silicon nitride.

Abstract: A current-voltage non-linear resistor (10) comprises a sintered body (20) of a mixture whose chief constituent is zinc oxide and including as auxiliary constituents at least bismuth (Bi), antimony (Sb), manganese (Mn), cobalt (Co) and nickel (Ni). Also, the average grain size of the mixture is no more than 0.4 ?m; and the average grain size of the zinc oxide grains in the sintered body (20) is no more than 7.5 ?m and the standard deviation based on the grain size distribution of zinc oxide grains in the sintered body (20) is no more than 15% of the average grain size of the zinc oxide grains.

Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.

Abstract: A functional layer material for a solid oxide fuel cell (SOFC) including a ceria ceramic oxide and a metal oxide including a metal, except for zirconium, having a Vegard's slope X represented by Equation 1 and having an absolute value |X| of the Vegard's slope X, wherein 27×105?|X|?45×105: X=(0.0220ri+0.00015zi) ??(1), wherein ri is an ionic radius difference between the metal and Ce4+, and zi is a charge difference between the metal and Ce4+.

Abstract: Provided is a zinc oxide sintered compact tablet enabling a transparent conductive film having no pinholes defects to be stably obtained during vacuum deposition film formation by suppressing the occurrence of the splashing phenomenon. A zinc oxide sintered compact tablet having hexagonal crystal structure, wherein when the integrated intensity of surface (103) and surface (110) found through X-ray diffraction analysis using CuK? radiation is taken to be I(103) and I(110) respectively, the orientation of the uniaxially pressed surface that is expressed by I(103)/(I(103)+I(110)) is 0.48 or more is obtained by performing pressurized formation of a granulated powder composed of a zinc oxide powder or a powder mixture of zinc oxide and an added element as a dopant and having a percentage of donut shaped secondary particles of 50% or more, sintering at normal pressure and a temperature of 800° C. to 1300° C.

Abstract: The present invention discloses a low-temperature co-precipitation method for fabricating TCO powders, which comprises steps: respectively dissolving two or more metals/metal salts in solvents to obtain metal ion solutions; mixing the metal ion solutions to form a precursor solution having a specified composition; enabling a co-precipitation reaction at a temperature lower than 45° C. via adding precipitant in two stages, controlling the temperature of precipitation reactions and undertaking aging processes; flushing, filtering, drying and calcining the precipitates to obtain TCO powders having a specified composition and improved quality.

Abstract: A topical composition containing galvanic particulates consisting of a first conductive material that is zinc and a second conductive material that is copper is provided.

Abstract: Buffer compositions comprising semiconductive oxide particles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer are provided. Semiconductive oxide particles include metal oxides and bimetallic oxides. Acid polymers are derived from monomers or comonomers of polyolefins, polyacrylates, polymethacrylates, polyimides, polyamides, polyaramides, polyacrylamides, polystrenes. The polymer backbone, side chains, pendant groups or combinations thereof may be fluorinated or highly fluorinated. Semiconductive polymers include polymers or copolymers derived from thiophenes, pyrroles, anilines, and polycyclic heteroaromatics. Methods for preparing buffer compositions are also provided.