Silicon Containing Or With Silicon Compound Patents (Class 252/521.3)
  • Patent number: 11716903
    Abstract: A thermoelectric conversion element includes: a thermoelectric conversion material portion composed of a material having a band gap; a first electrode disposed in contact with the thermoelectric conversion material portion; a second electrode disposed in contact with the thermoelectric conversion material portion and disposed to be separated from the first electrode; and a sealing portion that seals the thermoelectric conversion material portion. A partial pressure of oxygen in a region surrounding the thermoelectric conversion material portion is maintained by the sealing portion so as to be lower than a partial pressure of oxygen in an external air.
    Type: Grant
    Filed: July 4, 2019
    Date of Patent: August 1, 2023
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOYOTA SCHOOL FOUNDATION
    Inventors: Masahiro Adachi, Yoshiyuki Yamamoto, Tsunehiro Takeuchi
  • Patent number: 10347907
    Abstract: A method for producing a volume change compensated (SSLC) material is disclosed. An initially prelithiated SSLC material is produced and delithiated to produce a delithiated SSLC material. Perform at least one iteration involving: (a) re-prelithiating the delithiated SSLC material to produce a re-prelithiated SSLC material; and (b) delithiating the re-prelithiated SSLC material produced in (a). At least one of the following is satisfied: (i) prior to performing the at least one iteration the initially prelithiated SSLC material is essentially completely lithiated; and (ii) at least one iteration produces a re-prelithiated SSLC material that is essentially completely prelithiated. In a final iteration, delithiating the re-prelithiated SSLC material produced in (a) completely delithiates the re-prelithiated SSLC material to produce the volume change compensated SSLC material.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: July 9, 2019
    Assignee: EoCell Limited
    Inventors: Yuriy Matus, Yongbong Han, Michael Pak
  • Patent number: 10236511
    Abstract: Compositions comprising Type I clathrates of silicon (Si46) or carbon (C46) wherein the framework of the cage structure includes nitrogen and carbon or nitrogen and silicon or nitrogen-silicon-carbon atom type composition, with or without guest atoms in their respective cage structures. The clathrate structures are particularly useful for energy storage applications such as battery electrodes.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: March 19, 2019
    Assignee: SOUTHWEST RESEARCH INSTITUTE
    Inventors: Kwai S. Chan, Michael A. Miller
  • Patent number: 10109848
    Abstract: The present invention relates to a negative electrode material for a lithium ion battery, made of a composite material comprising silicon-containing particles, artificial graphite particles and a carbon coating layer, wherein the silicon-containing particles are silicon particles having a SiOx layer (0<x?2) on a particle surface, have an oxygen content ratio of 1 mass % or more and 18 mass % or less, and mainly comprise particles having a primary particle diameter of 200 nm or less; and the artificial graphite particles have a scale-like shape. By using the negative electrode material, a lithium ion battery having a high capacitance and excellent charge-discharge cycle characteristics can be produced.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: October 23, 2018
    Assignees: SHOWA DENKO K.K., UMICORE
    Inventors: Hirokazu Murata, Masataka Takeuchi, Nobuaki Ishii, Sam Siau, Nicolas Marx, Stijn Put
  • Patent number: 9750122
    Abstract: A compact particle accelerator having an input portion configured to receive power to produce particles for acceleration, where the input portion includes a switch, is provided. In a general embodiment, a vacuum tube receives particles produced from the input portion at a first end, and a plurality of wafer stacks are positioned serially along the vacuum tube. Each of the plurality of wafer stacks include a dielectric and metal-oxide pair, wherein each of the plurality of wafer stacks further accelerate the particles in the vacuum tube. A beam shaper coupled to a second end of the vacuum tube shapes the particles accelerated by the plurality of wafer stacks into a beam and an output portion outputs the beam.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: August 29, 2017
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventor: Juan M. Elizondo-Decanini
  • Patent number: 9475695
    Abstract: Silicon based nanoparticle inks are formulated with viscous polycyclic alcohols to control the rheology of the inks. The inks can be formulated into pastes with non-Newtonian rheology and good screen printing properties. The inks can have low metal contamination such that they are suitable for forming semiconductor structures. The silicon based nanoparticles can be elemental silicon particles with or without dopant.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: October 25, 2016
    Assignee: NanoGram Corporation
    Inventors: Weidong Li, Masaya Soeda, Gina Elizabeth Pengra-Leung, Shivkumar Chiruvolu
  • Patent number: 9196768
    Abstract: An apparatus for deposition of a plurality of elements onto a solar cell substrate that comprises: a housing; a transporting apparatus to transport the substrate in and out of the housing; a first tubing apparatus to deliver powders of a first elements to the housing; a first source material tube located outside of the housing and joined to a feeder tube of the tubing apparatus; a valve located inside of the first source material tube sufficient to block access between the first source material tube and the first feeder tube; a first heating tube located inside of the housing and connected to the first feeder tube; a similar second tubing apparatus to deliver powders of a second elements to the housing; a loading station for loading the substrate onto the transporting apparatus; one or more thermal sources to heat the housing and the first and second heating tube.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: November 24, 2015
    Inventor: Jehad A. Abushama
  • Publication number: 20150123050
    Abstract: A positive-electrode active material with improved electrical conductivity, and a power storage device using the material are provided. A positive-electrode active material with large capacity, and a power storage device using the material are provided. A core including lithium metal oxide is used as a core of a main material of the positive-electrode active material, and one to ten pieces of graphene is used as a covering layer for the core. A hole is provided for graphene, whereby transmission of a lithium ion is facilitated, resulting in improvement of use efficiency of current.
    Type: Application
    Filed: January 5, 2015
    Publication date: May 7, 2015
    Inventors: Shunpei Yamazaki, Tamae Moriwaka, Takuya Hirohashi, Kuniharu Nomoto, Takuya Miwa
  • Patent number: 9005480
    Abstract: The present invention describes a solventless ligand exchange using a siloxane polymer having a binding ligand that displaces the binding ligand on a quantum dot material.
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: April 14, 2015
    Assignee: Nanosys, Inc.
    Inventors: Paul T. Furuta, Robert Dubrow
  • Publication number: 20150069309
    Abstract: Compositions comprising Type I clathrates of silicon (Si46) or carbon (C46) wherein the framework of the cage structure includes nitrogen and carbon or nitrogen and silicon or nitrogen-silicon-carbon atom type composition, with or without guest atoms in their respective cage structures. The clathrate structures are particularly useful for energy storage applications such as battery electrodes.
    Type: Application
    Filed: September 10, 2013
    Publication date: March 12, 2015
    Inventors: Kwai S. CHAN, Michael A. MILLER
  • Patent number: 8956558
    Abstract: A paste composition for forming a back surface electrode of a solar cell 10 provided by the present invention contains, as solid matter, an aluminum powder, a glass powder, and a composite powder composed of a granular composite material of titanium oxide and an organic or inorganic compound containing silicon. When the total amount of the composite powder, the aluminum powder, and the glass powder is 100% by mass, the composite powder is contained in a ratio of 0.45% by mass or more and 1% by mass or less.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: February 17, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kosuke Ochi, Masao Yamagishi, Satoshi Tanaka, Yoshihiro Ohishi
  • Patent number: 8926871
    Abstract: According to example embodiments, a hybrid metal oxide having a network structure includes an oxygen atom that is covalently bonded to a first metal and a second metal. At least one of the first metal and the second metal has two or more oxidation states. A solar cell may have an interlayer including the hybrid metal oxide. According to example embodiments, a hybrid metal oxide may be formed using a sol-gel process from a solution including a first metal precursor and a second metal precursor.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: January 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Younhee Lim, Yeong Suk Choi, Soo Ghang Ihn, Jong Hyeok Park, Jung Kyu Kim
  • Patent number: 8920672
    Abstract: The present invention relates to negative active materials for rechargeable lithium batteries, manufacturing methods thereof, and rechargeable lithium batteries including the negative active materials. A negative active material for a rechargeable lithium battery includes a core including a material capable of carrying out reversible oxidation and reduction reactions and a coating layer formed on the core. The coating layer has a reticular structure.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: December 30, 2014
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Nam-Soon Choi, Sung-Soo Kim, Yong-Mook Kang, Kyoung-Han Yew
  • Publication number: 20140374673
    Abstract: A composition comprising a Type 1 clathrate of silicon having a Si46 framework cage structure wherein the silicon atoms on said framework are at least partially substituted by carbon atoms, said composition represented by the formula CySi46-y with 1?y?45. The composition of may include one or more guest atoms A within the cage structure represented by the formula AxCySi46-y wherein A=H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca. Sr, Ba, Ra, Eu, Cl, Br, or I or any metal or metalloid element and x is the number of said guest atoms within said cage structure.
    Type: Application
    Filed: June 24, 2013
    Publication date: December 25, 2014
    Inventors: Kwai S. CHAN, Michael A. MILLER
  • Patent number: 8900654
    Abstract: Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SinH2n and SinH2n+2, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high purity, high solubility and/or high viscosity. The polysilanes, polygermanes and/or polysilagermanes are useful as a precursor to silicon- and/or germanium-containing conductor, semiconductor and dielectric films.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: December 2, 2014
    Assignee: Thin Film Electronics, Inc.
    Inventors: Klaus Kunze, Gregory Nyce, Wenzhuo Guo
  • Publication number: 20140347718
    Abstract: The invention provides an electrophoretic medium comprising at least two types of particles having substantially the same electrophoretic mobility but differing colors. The invention also provides article of manufacture comprising a layer of a solid electro-optic medium, a first adhesive layer on one surface of the electro-optic medium, a release sheet covering the first adhesive layer, and a second adhesive layer on an opposed second surface of the electro-optic medium.
    Type: Application
    Filed: August 13, 2014
    Publication date: November 27, 2014
    Inventors: Gregg M. Duthaler, Karl Raymond Amundson, Barrett Comiskey, Holly G. Gates, Alberto Goenaga, John E. Ritter, Michael L. Steiner, Russell J. Wilcox, Robert W. Zehner, Anthony Edward Pullen
  • Patent number: 8889257
    Abstract: An article having: a nonconductive fiber and a RuO2 coating. A method of: immersing a nonconductive article in a solution of RuO4 and a nonpolar solvent at a temperature that is below the temperature at which RuO4 decomposes to RuO2 in the nonpolar solvent in the presence of the article; and warming the article and solution to ambient temperature under ambient conditions to cause the formation of a RuO2 coating on a portion of the article. An article having: a nonconductive fiber and a coating. The coating is made by electroless deposition, sputtering, atomic-layer deposition, chemical vapor deposition, or physical vapor deposition.
    Type: Grant
    Filed: October 6, 2008
    Date of Patent: November 18, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Debra R Rolison, Jeffrey W Long, Christopher N. Chervin, Justin C Lytle, Katherine A. Pettigrew
  • Patent number: 8871120
    Abstract: Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX3 and PQ3, where X and Q are halides. Some embodiments include methods of selectively etching undoped silicon dioxide relative to doped silicon dioxide, in which thallium is incorporated into the doped silicon dioxide prior to the etching. Some embodiments include compositions of matter containing silicon dioxide doped with thallium to a concentration of from about 1 weight % to about 10 weight %.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: October 28, 2014
    Assignee: Micron Technology, Inc.
    Inventor: Nishant Sinha
  • Patent number: 8858843
    Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: October 14, 2014
    Assignee: Innovalight, Inc.
    Inventors: Elena Rogojina, Maxim Kelman, Giuseppe Scardera
  • Publication number: 20140299780
    Abstract: A device includes a neutron-sensitive composition. The composition includes, in weight percent, a non-zero amount of aluminum oxide (e.g., approximately 1% to approximately 3.5% aluminum oxide), greater than 12% (e.g., approximately 12% to approximately 17%) boron oxide, greater than approximately 60% silicon oxide (e.g., approximately 62% to approximately 68% silicon oxide), and a non-zero amount of sodium oxide (e.g., approximately 10% to approximately 14% sodium oxide). The device is capable of interacting with neutrons to form an electron cascade.
    Type: Application
    Filed: May 14, 2013
    Publication date: October 9, 2014
    Applicant: Nova Scientific, Inc.
    Inventors: W. Bruce Feller, Paul L. White, William J.S. Zhong
  • Publication number: 20140294713
    Abstract: For a Periodic Table Group 13 metal nitride semiconductor crystal obtained by epitaxial growth on the main surface of a base substrate that has a nonpolar plane and/or a semipolar plane as its main surface, an object of the present invention is to provide a high-quality semiconductor crystal that has a low absorption coefficient, is favorable for a device, and is controlled dopant concentration in the crystal, and to provide a production method that can produce the semiconductor crystal. A high-quality Periodic Table Group 13 metal nitride semiconductor crystal that has a precisely controlled dopant concentration within the crystal and a low absorption coefficient and that is thus favorable for a device, can be provided by inhibiting oxygen doping caused by impurity oxygen and having the Si concentration higher than the O concentration.
    Type: Application
    Filed: April 21, 2014
    Publication date: October 2, 2014
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yuya SAITO, Sumitaka Itoh, Shigeru Terada, Hiromitsu Kimura
  • Publication number: 20140264186
    Abstract: The present invention provides for a natural, non-toxic, environmentally friendly, “green” mineral based composition that produces ions and emits far infrared heat and the composition comprises tourmaline microcrystals and at least one activating element.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Inventors: Douglas Spatz, Dan DeLaRosa
  • Patent number: 8835052
    Abstract: A negative electrode active material for an electric device. The negative electrode active material including an alloy having a composition formula SixTiyZnz, where (1) x+y+z=100, (2) 38?x<100, (3) 0<y<62, and (4) 0<z<62 in terms of mass percent.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: September 16, 2014
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Manabu Watanabe, Osamu Tanaka
  • Patent number: 8828280
    Abstract: The paste composition for forming a back electrode of solar cell 10 provided by the present invention contains, as solids, an aluminum powder, a glass powder and a composite powder composed of a particulate composite of a metal oxide with a silicon-containing organic or inorganic compound. This composite powder is contained in an amount of at least 0.01 mass % but less than 0.45 mass % given 100 mass % as the total of the composite powder, the aluminum powder and the glass powder.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: September 9, 2014
    Assignee: Noritake Co., Ltd
    Inventors: Kosuke Ochi, Shinji Senda, Masao Yamagishi, Mamiko Kume
  • Patent number: 8828281
    Abstract: Starting from, as the initial composite, an LAS component in accordance with the composition LixAlySizOw, where x varies between 0.8 and 1.2, y varies between 0.8 and 1.2, z varies between 0.8 and 2, and w varies between 4 and 6, the LAS component is subsequently mixed with SiC nanoparticles, to obtain a stable, homogeneous suspension. Thereafter, the resulting suspension is dried. Subsequently, the material obtained is shaped and, finally, the material obtained in the preceding step is sintered.
    Type: Grant
    Filed: August 17, 2010
    Date of Patent: September 9, 2014
    Assignee: Consejo Superior de Investigaciones Cientificas (CSIC)
    Inventors: Ramon Torrecillas San Millan, Olga Garcia Moreno, Adolfo Fernandez Valdes
  • Patent number: 8822075
    Abstract: A negative electrode active material for an electric device, including an alloy having a composition formula SixZnyAlz, where x++y=100 , 26?x?47, 18?y?44, and 22?z?46 are satisfied.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: September 2, 2014
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Manabu Watanabe, Osamu Tanaka, Takashi Miyamoto
  • Patent number: 8771560
    Abstract: In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification of the semiconductor single crystal in a conical or tapered portion of the crucible. Dopant may be partially added in advance into the crucible, with the remainder added into the semiconductor melt as described. Type III-V semiconductor single crystals or wafers having a diameter of at least about 100 mm, can be prepared having an electrical conductivity of at least about 250 Siemens/cm, and/or an electric resistivity of at most about 4×10?3 ?cm, and/or a significantly improved ratio of hall mobility to charge carrier concentration.
    Type: Grant
    Filed: February 20, 2008
    Date of Patent: July 8, 2014
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Ulrich Kretzer, Stefan Eichler, Thomas Bünger
  • Publication number: 20140184249
    Abstract: A condition monitoring paint is formed of a base material, and conductive components for forming a conductive network. The conductive components may include nano-particles or nano-structures. The paint in used in a condition monitoring system for monitoring the integrity or condition of structures, such as bridges.
    Type: Application
    Filed: December 28, 2012
    Publication date: July 3, 2014
    Applicant: UNIVERSITY OF STRATHCLYDE
    Inventors: Mohamed Saafi, David McGahon
  • Patent number: 8758939
    Abstract: Disclosed is an anode active material including: a crystalline phase comprising Si and a Si-metal alloy; and an amorphous phase comprising Si and a Si-metal alloy, wherein the metal of the Si-metal alloy of the crystalline phase is the same as or different from the metal of the Si-metal alloy of the amorphous phase.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: June 24, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Ki Tae Kim, Je-Young Kim, Dong-Sub Jung, Seung Tae Hong, Young Sun Choi
  • Patent number: 8753779
    Abstract: Composite compounds of tin and lithium, silicon and lithium, or tin, silicon, and lithium having tin and silicon nano-dispersed in a lithium-containing matrix may be used as electrode materials and particularly anode materials for use with rechargeable batteries. Methods of making the composite compounds include the oxidation of alloys, the reaction of stabilized lithium metal powder with tin and silicon oxides, and the reaction of inorganic salts of lithium with tin and silicon containing compounds.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: June 17, 2014
    Assignee: FMC Corporation
    Inventors: Yuan Gao, Marina Yakovleva, John Engel, Daniel Diesburg, Brian Fitch
  • Patent number: 8747551
    Abstract: After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method, where a phosphorus concentration [P]L(atoms/cm3) in the silicon melt, a Ge concentration in the silicon monocrystal, an average temperature gradient Gave (K/mm) and a pull speed V (mm/min) are controlled to satisfy a formula (1) as follows, a phosphorus concentration [P](atoms/cm3) and the Ge concentration [Ge](atoms/cm3) in the silicon monocrystal satisfy a relationship according to a formula (2) as follows while growing the silicon monocrystal, where dSi(?) represents a lattice constant of silicon, rSi(?) represents a covalent radius of silicon, rP(?) represents a covalent radius of phosphorus, and rGe(?) represents a covalent radius of Ge: [ P ] L + ( 0.3151 × [ Ge ] + 3.806 × 10 18 ) / 1.5 < 0.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: June 10, 2014
    Assignee: Sumco Techxiv Corporation
    Inventors: Shinichi Kawazoe, Yasuhito Narushima, Toshimichi Kubota, Fukuo Ogawa
  • Publication number: 20140138601
    Abstract: Various embodiments of a composite material are provided. In one embodiment of the present invention a nanometer-scale composite material comprises, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material. The composite material exhibits memristive properties when a voltage differential is applied to the nanocomposite. In another embodiment, a variable resistor device includes a first electrode terminal and a second electrode terminal and a nanocomposite in electrical communication with the electrode terminals. The composite material comprises, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material. The memristor is tunable as the minimum instantaneous resistance can be altered several orders of magnitude by varying the composition and ratio of the variable-conductivity material and conductive material constituents of the composites.
    Type: Application
    Filed: November 15, 2013
    Publication date: May 22, 2014
    Applicant: Vanderbilt Unviersity
    Inventors: Jeremy West Mares, Sharon M. Weiss
  • Publication number: 20140131751
    Abstract: A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers.
    Type: Application
    Filed: May 29, 2013
    Publication date: May 15, 2014
    Applicant: GENESIS PHOTONICS INC.
    Inventors: Yun-Li Li, Yu-Chu Li, Cheng-Yen Chen
  • Patent number: 8696949
    Abstract: A particulate mixture which can be used as a precursor of lithium transition metal silicate-type compound of small particle size and low crystallinity, is provided. It is a mixture of silicon oxide particulates, transition metal oxide particulates, and lithium transition metal silicate particulates, and its powder X-ray diffraction measurement shows diffraction peaks near 2?=33.1° and near 2?=35.7°, and said silicon oxide particulates and said transition metal oxide particulates are amorphous, and said lithium transition metal silicate particulates are in a microcrystalline or amorphous state.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: April 15, 2014
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Michio Ohkubo, Takeshi Yagi, Michihiro Shimada, Naoki Uno, Yosuke Hirayama, Takeshi Nishimura, Toshio Tani
  • Publication number: 20140097391
    Abstract: The present invention provides a method of preparing a nanocomposite thermoelectric material. The method includes heating a reaction mixture of a semiconductor material and a metal complex to a temperature greater than the decomposition temperature of the metal complex. The heating forms metallic inclusions having a size less than about 100 nm that are substantially evenly distributed throughout the semiconductor material forming the nanocomposite thermoelectric material. The present invention also provides a nanocomposite thermoelectric material prepared by this method.
    Type: Application
    Filed: October 9, 2013
    Publication date: April 10, 2014
    Applicant: California Institute of Technology
    Inventors: Jean-Pierre Fleurial, Sabah K. Bux
  • Patent number: 8679679
    Abstract: A composite material having utility as an anode for lithium ion batteries comprises silicon, a transition metal, a ceramic and an electrically conductive diluent such as carbon. In particular instances, the ceramic is electrically conductive, and may comprise vanadium carbide or tungsten carbide. The transition metal may, in some instances, comprise iron. The material may be fabricated by grinding together a starting mixture of the components, and grinding may be accomplished in a high impact ball milling process, and the grinding step may cause partial alloying of the silicon with the metal and/or carbon. Further disclosed is a method for making the material as well as electrodes which incorporate the material.
    Type: Grant
    Filed: January 8, 2009
    Date of Patent: March 25, 2014
    Assignee: A123 Systems, Inc.
    Inventors: Pu Zhang, Suresh Mani, Junqing Ma, Liya Wang, Jun Q. Chin
  • Patent number: 8632695
    Abstract: A negative electrode active material for nonaqueous secondary batteries containing a silicon solid solution. The silicon solid solution has one or more than one of a group 3 semimetal or metal element, a group 4 semimetal or metal element except silicon, and a group 5 nonmetal or semimetal element incorporated in silicon. The solid solution shows an XRD pattern in which the position of the XRD peak of the solid solution corresponding to the XRD peak position assigned to the (422) plane of silicon shifts to the smaller or greater angle side relative to the position of the XRD peak assigned to the (422) plane of silicon peak by 0.1° to 1°. The solid solution has a lattice strain of 0.01% to 1% as determined by XRD.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: January 21, 2014
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Hitohiko Ide, Daisuke Inoue, Yanko Marinov Todorov, Natsumi Shibamura, Yasunori Tabira
  • Patent number: 8632702
    Abstract: Highly uniform silicon/germanium nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silicon/germanium particles can be surface modified to form the dispersions. The silicon/germanium nanoparticles can be doped to change the particle properties. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to form selectively doped deposits of semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
    Type: Grant
    Filed: January 2, 2008
    Date of Patent: January 21, 2014
    Assignee: NanoGram Corporation
    Inventors: Henry Hieslmair, Vladimir K. Dioumaev, Shivkumar Chiruvolu, Hui Du
  • Publication number: 20130344301
    Abstract: Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.
    Type: Application
    Filed: August 23, 2013
    Publication date: December 26, 2013
    Inventors: Erik SCHER, Steven MOLESA, Joerg ROCKENBERGER, Arvind KAMATH, Ikuo MORI, Wenzhuo GUO, Dmitry KARSHTEDT, Vladimir DIOUMAEV
  • Patent number: 8613872
    Abstract: A charge-carrier transport layer for an electro-optical component includes an organic charge-carrier transport material. A plurality of first particles having a diameter ranging from 1 nm to 100 nm is incorporated in the organic charge-carrier transport material and contains a first transparent oxide. A plurality of second particles having a diameter between 100 nm and 1000 nm is also incorporated into the organic charge-carrier transport material and contains a second transparent oxide. The index of refraction of the plurality of second particles differs from the index of refraction of the organic charge-transport material.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: December 24, 2013
    Assignee: Karlsruher Institut fuer Technologie
    Inventors: Uli Lemmer, Julian Hauss, Boris Riedel, Martina Gerken
  • Patent number: 8608983
    Abstract: A composite anode active material including metal core particles and carbon nanotubes that are covalently bound to the metal core particles, an anode including the composite anode active material, a lithium battery employing the anode, and a method of preparing the composite anode active material.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: December 17, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-hee Lee, Jeong-na Heo, Ho-suk Kang, Sang-kook Mah, In-taek Han
  • Patent number: 8610848
    Abstract: A resist composition for a black matrix, the resist composition including carbon nanotubes, a halosulfonic acid, an alcohol, an ammonium hydroxide compound, and a fluorosilane.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: December 17, 2013
    Assignee: Samsung Display Co. Ltd.
    Inventors: Woo Sub Shim, Sung Woong Kim, Jang Sub Kim, Yoon Ho Kang
  • Patent number: 8591773
    Abstract: The present application provides a heterojunction nano material, a negative pole piece of a lithium ion battery, and a lithium ion battery, where the heterojunction nano material includes a MoO3 nanobelt and a metal oxide in the alloy lithium intercalation mechanism coated on the surface of the MoO3 nanobelt. The negative pole piece of the lithium ion battery uses the heterojunction nano material as an active material, and the lithium ion battery using the negative pole piece of the lithium ion battery has a large reversible specific capacity and a high cycle stability.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: November 26, 2013
    Assignee: Huawei Technologies Co., Ltd.
    Inventor: Xingjie Wang
  • Patent number: 8585937
    Abstract: A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: November 19, 2013
    Assignee: Rockwell Collins, Inc.
    Inventors: Nathan P. Lower, Ross K. Wilcoxon, Alan P. Boone, Nathaniel P. Wyckoff, Brandon C. Hamilton
  • Patent number: 8580158
    Abstract: Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX3 and PQ3, where X and Q are halides. Some embodiments include methods of selectively etching undoped silicon dioxide relative to doped silicon dioxide, in which thallium is incorporated into the doped silicon dioxide prior to the etching. Some embodiments include compositions of matter containing silicon dioxide doped with thallium to a concentration of from about 1 weight % to about 10 weight %.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: November 12, 2013
    Assignee: Micron Technology, Inc.
    Inventor: Nishant Sinha
  • Patent number: 8563172
    Abstract: An anode composition for a lithium secondary battery includes an anode active material, a binder, and a conductive material. The active material includes a plurality of anode active material particles, each of which includes a core made of metal or metalloid allowing alloying or dealloying with lithium, or a compound containing the metal or metalloid; and a shell formed at an outer portion of the core and having Ketjen black. The conductive material includes carbon nano fiber. The anode composition uses a metal-based anode active material that may controls the volume expansion, and also uses conductive material with excellent dispersion so that the life characteristic of the battery may be improved.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: October 22, 2013
    Assignee: LG Chem, Ltd.
    Inventors: Yo-Han Kwon, Byung-Hun Oh
  • Publication number: 20130264523
    Abstract: The present invention relates to conductive pigment granules which are distinguished by the fact that they are based on a support material, where the support material has been coated with one or more electrically conductive pigments by means of an adhesion promoter. The pigment granules according to the invention are preferably used in pale surface coatings which have been formed with electrically conductive properties.
    Type: Application
    Filed: November 17, 2011
    Publication date: October 10, 2013
    Applicant: MERCK PATENT GMBH
    Inventors: Thomas Rathschlag, Carsten Griessmann
  • Patent number: 8551369
    Abstract: A wiring material contains copper, nitrogen, and a dopant which is more readily oxidized than copper in an Ellingham diagram, the dopant being added to the wiring material at a rate of not less than 0.5 at. % and not more than 10 at. %.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: October 8, 2013
    Assignee: FUJIFILM Corporation
    Inventor: Takamichi Fujii
  • Patent number: 8529802
    Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: September 10, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Baek Seon, Sang-Yoon Lee, Jeong-il Park, Myung-Kwan Ryu, Kyung-Bae Park
  • Patent number: 8524582
    Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: September 3, 2013
    Assignee: The Arizona Board of Regents
    Inventors: John Kouvetakis, Cole J. Ritter, III