Silicon Containing Or With Silicon Compound Patents (Class 252/521.3)
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Publication number: 20090101279Abstract: A wiring structure having a wiring-terminal-connection adhesive that includes a curing agent capable of generating a free radical upon heating, a radically polymerizable substance and silicone particles.Type: ApplicationFiled: June 13, 2008Publication date: April 23, 2009Inventors: Motohiro Arifuki, Itsuo Watanabe, Kouji Motomura, Kouji Kobayashi, Yasushi Gotoh, Tohru Fujinawa
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Patent number: 7521262Abstract: The present invention is directed to a silicon substrate having a monolayer formed by an electrochemically-induced reaction between silicon hydride moieties on the silicon surface and optionally substituted alkynes covalently bound to the surface of the silicon substrate and to a method for electrochemically producing such a functionalized silicon substrate. The method of forming a covalently bound monolayer on a silicon surface comprises the steps of contacting the silicon surface with a C2-C24 alkyne and electrografting optionally substituted alkynes to the silicon surface.Type: GrantFiled: December 10, 2004Date of Patent: April 21, 2009Assignee: Purdue Research FoundationInventors: Jillian M. Buriak, Michael P. Stewart, Edward Robins
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Publication number: 20090098350Abstract: A conductive composition consisting essentially of (a) 50-95 wt % finely divided particles of an electrically-conductive material dispersed in (b) a liquid vehicle, for use in the manufacture of an electrically-conductive pattern on a substrate for the use of reducing cross-sectional area and width while retaining conductivity and resistivity.Type: ApplicationFiled: November 24, 2008Publication date: April 16, 2009Inventor: SARAH JANE MEARS
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Patent number: 7517470Abstract: An organic-inorganic hybrid material comprising a metal oxide and a chelating ligand is synthesized. The function of a coloring property, a light-emitting property, or semiconductivity of the organic-inorganic hybrid material can be controlled by chelating ligand. The organic-inorganic hybrid material is prepared by sol-gel method using sol which includes a metal alkoxide and/or a metal salt and a functional chelating agent.Type: GrantFiled: March 25, 2004Date of Patent: April 14, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Seo, Harue Nakashima, Ryoji Nomura
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Publication number: 20090092899Abstract: A method includes combining fumed silicon oxide with a metal to form silicon having an average particle size of less than approximately 100 nm. The silicon can be incorporated into an anode of a lithium ion cell.Type: ApplicationFiled: September 10, 2008Publication date: April 9, 2009Applicant: Tiax LLCInventor: Jack Treger
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Publication number: 20090092855Abstract: The invention relates to a method of doping semiconductor material. Essentially, the method comprises mixing a quantity of particulate semiconductor material with an ionic salt or a preparation of ionic salts. Preferably, the particulate semiconductor material comprises nanoparticles with a size in the range 1 nm to 100 ?m. Most preferably, the particle size is in the range from 50 nm to 500 nm. Preferred semiconductor materials are intrinsic and metallurgical grade silicon. The invention extends to a printable composition comprising the doped semiconductor material as well as a binder and a solvent. The invention also extends to a semiconductor device formed from layers of the printable composition having p and n type properties.Type: ApplicationFiled: August 23, 2006Publication date: April 9, 2009Applicant: UNIVERSITY OF CAPE TOWNInventors: David Thomas Britton, Margit Harting
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Publication number: 20090081549Abstract: A composition for use in an electrochemical redox reaction is described. The composition may comprise a material represented by a general formula MyXO4 or AxMyXO4, where each of A (where present), M, and X independently represents at least one element, O represents oxygen, and each of x (where present) and y represent a number, and an oxide of at least one of various elements, wherein the material and the oxide are cocrystailine, and/or wherein a volume of a crystalline structural unit of the composition may be different than a volume of a crystalline structural unit of the material alone. An electrode comprising such a composition is also described, as is an electrochemical cell comprising such an electrode. A process of preparing a composition for use in an electrochemical redox reaction is also described.Type: ApplicationFiled: November 5, 2008Publication date: March 26, 2009Inventors: Ben-Jie Liaw, Wen-Ren Liu, Sheng-Shih Chang
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Patent number: 7504349Abstract: Thick film conductive copper pastes that are lead-free and cadmium-free. The inventive copper pastes possess desirable characteristics, including good solderability, good wire bondability, a low firing temperature, and a wide temperature processing window, and provide excellent adhesion to a variety of substrates, including alumina and glass coated stainless steel substrates, as well as low resistivity, and a microstructure after firing that is dense and substantially free of pores.Type: GrantFiled: December 13, 2006Date of Patent: March 17, 2009Assignee: Ferro CorporationInventors: Orville W. Brown, Srinivasan Sridharan
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Publication number: 20090050935Abstract: The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.Type: ApplicationFiled: November 21, 2006Publication date: February 26, 2009Applicant: The Arizona Board ofg Regents, a body corporate acting on behalf of Arizona State UniversityInventors: John Kouvetakis, Cole J. Ritter III
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Publication number: 20080302411Abstract: Provided are a paste composition making it possible to improve the adhesive property of a backside electrode and restrain an aluminum electrode layer from exfoliating, and a solar cell element having an electrode formed by use of this composition. The paste composition is a paste composition for forming an electrode (8) on a silicon semiconductor substrate (1) which comprises aluminum powder, an organic vehicle, and a tackifier. The solar cell element has the electrode (8) formed by painting a paste composition having the above-mentioned characteristic onto the silicon semiconductor substrate (1) and then firing the resultant.Type: ApplicationFiled: June 1, 2006Publication date: December 11, 2008Inventors: Jun Nakahara, Gaochao Lai, Haruzo Katoh, Takashi Watsuji
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Publication number: 20080286898Abstract: A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition.Type: ApplicationFiled: May 17, 2007Publication date: November 20, 2008Applicant: BEE FUND BIOTECHNOLOGY INC.Inventors: Ching-Hohn Lien, Cheng-Tsung Kuo, Jun Nan Lin, Jie-An Zhu, Li-Yun Zhang, Wei-Cheng Lien
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Patent number: 7435702Abstract: The photocatalyst based on a composite WO3—SiC/TiO2 semiconductor and subjected to radiation whose wavelength is at least partly less than 400 nm gives1 photocatalytic oxidation of volatile organic compounds and leads to their total mineralisation into CO2 and H2O. The process for the photocatalytic purification of industrial, agricultural or domestic gaseous effluent may be conducted at room pressure and temperature. Its conversion rate is high and stable.Type: GrantFiled: October 28, 2002Date of Patent: October 14, 2008Assignees: SICAT, Centre National de la Recherche Scientifique, Universite Louis Pasteur de StrasbourgInventors: Valerie Spitzer-Keller, Pierre Bernhardt, Cuong Pham-Huu, Francois Garin, Marc J. Ledoux, Charlotte Pham-Huu
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Publication number: 20080224104Abstract: The invention relates to a method for the preparation of stable suspensions of metal oxide nanoparticles, in which uncharged metal oxide nanoparticles are first treated with a non-ionic surfactant in a polar organic solvent under certain conditions, and the suspension obtained is then treated with a charging solution. The suspensions of the invention can be used for preparation of high quality metal oxide films by electrophoresis deposition (EPD).Type: ApplicationFiled: August 3, 2006Publication date: September 18, 2008Inventors: Arie Zaban, Larissa Grinis, Asher Ofir
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Patent number: 7425285Abstract: There are provided an electrode material for a lithium secondary battery which comprises alloy particles comprising silicon as a major component and having an average particle diameter of 0.02 ?m to 5 ?m, wherein the size of a crystallite of the alloy is not less than 2 nm but no more than 500 nm and an intermetallic compound containing at least tin is dispersed in a silicon phase and an electrode material for a lithium secondary battery which comprises alloy particles comprising silicon as a major component and having an average particle diameter of 0.02 ?m to 5 ?m, wherein the size of a crystallite of the alloy is not less than 2 nm but no more than 500 nm and an at least one intermetallic compound containing at least one element selected from the group consisting of aluminum, zinc, indium, antimony, bismuth and lead is dispersed in a silicon phase.Type: GrantFiled: May 1, 2007Date of Patent: September 16, 2008Assignee: Canon Kabushiki KaishaInventors: Masaya Asao, Soichiro Kawakami, Takao Ogura
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Patent number: 7422708Abstract: Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film.Type: GrantFiled: March 10, 2006Date of Patent: September 9, 2008Assignee: Kovio, Inc.Inventors: Klaus Kunze, Scott Haubrich, Fabio Zurcher, Brent Ridley, Joerg Rockenberger
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Patent number: 7416688Abstract: Disclosed are transparent conductive pigments of flake-form substrates coated with a conductive layer, where the number-weighted mean particle area F50 of the transparent conductive pigments is greater than or equal to 150 ?m2, and processes for the production of the pigments, and the use thereof.Type: GrantFiled: May 17, 2005Date of Patent: August 26, 2008Assignee: Merck Patent Gesellschaft mit beschrankter HaftungInventors: Gerhard Pfaff, Reinhold Rueger, Otto Stahlecker, Frank Ott
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Publication number: 20080199772Abstract: The present invention relates to primary and secondary electrochemical energy storage systems. More particularly, the present invention relates to such systems as battery cells, especially battery cells utilizing metal fluorides with the presence of phosphates or fluorophosphates, which use materials that take up and release ions as a means of storing and supplying electrical energy.Type: ApplicationFiled: February 4, 2008Publication date: August 21, 2008Inventors: Glenn Amatucci, Fadwa Badway
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Publication number: 20080190355Abstract: The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF/mm2 and preferably below 1 pF/mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm?3, and preferably to below 1·1016 cm?3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors.Type: ApplicationFiled: July 6, 2005Publication date: August 14, 2008Applicant: II-VI INCORPORATEDInventors: Jihong Chen, Ilya Zwieback, Avinash K. Gupta, Donovan L. Barrett, Richard H. Hopkins, Edward Semenas, Thomas A. Anderson, Andrew E. Souzis
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Publication number: 20080174228Abstract: A dielectric layer composition includes a ceramic material, a binder, a solvent, and an additive, the additive being a selenium oxide additive or two or more of a selenium oxide, a vanadium oxide, a molybdenum oxide, and/or a cerium oxide.Type: ApplicationFiled: January 11, 2008Publication date: July 24, 2008Inventor: Jin-Keun Jung
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Patent number: 7378041Abstract: There are provided an electrode material for a lithium secondary battery which comprises alloy particles comprising silicon as a major component and having an average particle diameter of 0.02 ?m to 5 ?m, wherein the size of a crystallite of the alloy is not less than 2 nm but no more than 500 nm and an intermetallic compound containing at least tin is dispersed in a silicon phase and an electrode material for a lithium secondary battery which comprises alloy particles comprising silicon as a major component and having an average particle diameter of 0.02 ?m to 5 ?m, wherein the size of a crystallite of the alloy is not less than 2 nm but no more than 500 nm and an at least one intermetallic compound containing at least one element selected from the group consisting of aluminum, zinc, indium, antimony, bismuth and lead is dispersed in a silicon phase.Type: GrantFiled: March 26, 2004Date of Patent: May 27, 2008Assignee: Canon Kabushiki KaishaInventors: Masaya Asao, Soichiro Kawakami, Takao Ogura
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Patent number: 7371475Abstract: The target for the transparent conductive thin film having indium oxide as its major component and containing tungsten and/or molybdenum, obtained by forming a body of indium oxide powder, and tungsten oxide power and/or molybdenum oxide powder and then heating or sintering the formed body such that the thin film after sputtering has indium oxide as the main component and contains tungsten and/or molybdenum with an atomic ratio (W+Mo)/In of 0.0040 to 0.0470, whereby a transparent conductive thin film having excellent surface smoothness and low specific resistance of 6.0×10?4 ?·cm or less, and whose surface smoothness and specific resistance properties do not change even when heated at 170° C. is provided.Type: GrantFiled: May 27, 2003Date of Patent: May 13, 2008Assignee: Sumitomo Metal Mining Co., Ltd.Inventor: Yoshiyuki Abe
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Patent number: 7368071Abstract: A cathode composition for a lithium ion battery that contains lithium having the formula (a) Liy[M1(1?b)Mnb]O2 or (b) Liy[M1(1?b)Mnb]O1.5+c where 0?y<1, 0<b<1 and 0<c<0.5 and M1 represents one or more metal elements, with the proviso that for (a) M1 is a metal element other than chromium. The composition is in a form of a single phase having an O3 crystal structure that does not undergo a phase transformation to a spinel crystal structure when incorporated in a lithium-ion battery and cycled for 100 full charge-discharge cycles at 30 C and a final capacity of 130 mAh/g using a discharge current of 30 mA/g.Type: GrantFiled: December 23, 2005Date of Patent: May 6, 2008Assignee: 3M Innovative Properties CompanyInventors: Jeffrey R. Dahn, Zhonghua Lu
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Patent number: 7323121Abstract: The invention relates to a conductive infrared-absorbing coating material consisting of indium tin oxide. According to the invention, said coating material has a yellow index of above 15.Type: GrantFiled: June 24, 2003Date of Patent: January 29, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Detlef Burgard, Rüdiger Nass
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Patent number: 7323122Abstract: Silica-based particles coated with antimony oxide with a low refractive index and having conductivity are provided. The silica-based particles coated with antimony oxide comprise porous or hollow silica-based particles with antimony oxide coated thereon. A refractive index of the silica-based particles coated with antimony oxide is in the range from 1.35 to 1.60 with the volume resistivity value in the range from 10 to 5000 ?/cm and the average particle diameter in the range from 5 to 300 nm, and the thickness of the antimony oxide coating layer is in the range from 0.5 to 30 nm.Type: GrantFiled: October 15, 2004Date of Patent: January 29, 2008Assignee: Catalysts & Chemicals Industries Co., Ltd.Inventors: Ryo Muraguchi, Mitsuaki Kumazawa, Hiroyasu Nishida, Toshiharu Hirai
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Patent number: 7316792Abstract: An electrode material for a rechargeable lithium battery, characterized in that said electrode material comprises a fine powder of a silicon-based material whose principal component is silicon element, said fine powder having an average particle size (R) in a range of 0.1 ?m?R<0.5 ?m. An electrode structural body for a rechargeable lithium battery, having an electrode material layer comprising said silicon-based material fine powder. A rechargeable lithium battery whose anode comprising said electrode structural body.Type: GrantFiled: June 21, 2006Date of Patent: January 8, 2008Assignee: Canon Kabushiki KaishaInventors: Takeshi Kosuzu, Soichiro Kawakami, Masaya Asao, Hidetoshi Tsuzuki, Takao Ogura, Naoya Kobayashi
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Patent number: 7276187Abstract: A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio of 0.001 to 0.190.Type: GrantFiled: June 7, 2006Date of Patent: October 2, 2007Assignee: Sumitomo Metal Mining Co., Ltd.Inventor: Yoshiyuki Abe
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Patent number: 7232527Abstract: A sintered body for thermistor device comprising: at least one element selected from elements of group 3 in a periodic table proviso that La is excluded; at least one element selected from elements of group 2 in a periodic table; Mn; Al; and oxygen, and being substantially free from any transition metal other than Mn and the at least one element selected from elements of group 3 in the periodic table.Type: GrantFiled: December 1, 2003Date of Patent: June 19, 2007Assignee: NGK Spark Plug Co., Ltd.Inventors: Takaaki Chosokabe, Masaki Iwaya, Naoki Yamada
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Patent number: 7223498Abstract: Disclosed is an electrode for a lithium secondary battery comprising a negative active material powder comprising a metal capable of alloying with lithium, a conductive material powder, and a binder, wherein the density thereof is between 1.2 g/cm3 and 4.0 g/cm3.Type: GrantFiled: October 8, 2004Date of Patent: May 29, 2007Assignee: Samsung SDI Co., Ltd.Inventors: Keiko Matsubara, Toshiaki Tsuno, Akira Takamuka, Sung-Soo Kim, Bok-Hwan Jung
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Patent number: 7220298Abstract: A corrosion inhibiting mixture comprising (A1) corrosion-inhibiting pigments, (A2) amorphous silica modified with metal ions, and (A3) at least one compound of the general formula I: Mn(X)m??(I) in which the variables and indices have the following meanings: M is at least one central atom selected from the group of Lewis acceptors, X stands for Lewis donor ligands having at least one bridging atom selected from elements of main groups 5 and 6 of the periodic table of the elements, n is from 1 to 500, and m is from 3 to 2000; coating materials comprising said mixture and their use as coil coating materials.Type: GrantFiled: January 15, 2003Date of Patent: May 22, 2007Assignee: BASF Coatings AGInventors: Horst Hintze-Brüning, Lothar Jandel, Ralf Neuhaus, Markus Ruckpaul, Marc Bäumer
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Patent number: 7205256Abstract: An oxide material characterized by that it has a perovskite structure comprising an oxide represented by ABO3, (Bi2O2)2+ (Am?1BmO3m+1)2? wherein A represents one kind or two or more kinds of ions selected from the group consisting of Li+, Na+, K+, Pb2+, Ca2+, Sr2+, Ba2+, Bi3+, Y3+, Mn3+ and La3+, B represents one kind or two or more kinds of ions selected from the group consisting of Ru3+, Fe3+, Ti4+, Zr4+, Cu4+, Nb5+, Ta5+, V5+, W6+ and Mo6+, and m represents a natural number of 1 or more, LnBa2Cu3O7, Z2Ba2Can?1CunO2n+4 or ZBa2Can?1CunO2n+3, wherein Ln represents one kind or two or more kinds of ions selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, Z represents one kind or two or more kinds of ions selected from the group consisting of Bi, Tl and Hg, and n represents a natural number of from 1 to 5; and a catalytic substance containing one or more kinds of elements selected from the group consisting of Si, Ge and Sn.Type: GrantFiled: September 3, 2001Date of Patent: April 17, 2007Assignees: Sharp Kabushiki Kaisha, Japan represented by President of Tokyo Institute of TechnologyInventors: Takeshi Kijima, Hiroshi Ishiwara
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Patent number: 7189342Abstract: This invention relates to novel chemical compositions and manufacturing methods for producing electro-conductive, metal-ceramic materials having improved structural stability to operate at high temperatures in oxidizing atmospheres.Type: GrantFiled: May 9, 2003Date of Patent: March 13, 2007Assignee: Harmonics, Inc.Inventor: Lucian G. Ferguson
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Patent number: 7141187Abstract: An electrode material for a rechargeable lithium battery, characterized in that said electrode material comprises a fine powder of a silicon-based material whose principal component is silicon element, said fine powder having an average particle size (R) in a range of 0.1 ?m?R<0.5 ?m. An electrode structural body for a rechargeable lithium battery, having an electrode material layer comprising said silicon-based material fine powder. A rechargeable lithium battery whose anode comprising said electrode structural body.Type: GrantFiled: November 20, 2002Date of Patent: November 28, 2006Assignee: Canon Kabushiki KaishaInventors: Takeshi Kosuzu, Soichiro Kawakami, Masaya Asao, Hidetoshi Tsuzuki, Takao Ogura, Naoya Kobayashi
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Patent number: 7138347Abstract: A thick-film composition comprising: (a) conductive metal; (b) crystallized glass; (c) amorphous glass; and (d) organic medium.Type: GrantFiled: August 14, 2003Date of Patent: November 21, 2006Assignee: E. I. du Pont de Nemours and CompanyInventor: Takuya Konno
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Patent number: 7132169Abstract: Disclosed is a composition for forming a coating layer, and a flat monitor panel for a display device comprising the coating layer. The composition for forming the coating layer comprises a metallic oxide particulate, a coloring agent, and a silane coupling agent. The metallic oxide particulate is at least one metallic oxide selected from the group consisting of indium tin oxide (ITO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), SnO2, In2O3, and Sb2O3. The coloring agent includes an organic or an inorganic pigment, or a metal complex.Type: GrantFiled: September 9, 2002Date of Patent: November 7, 2006Assignee: Samsung SDI Co., Inc.Inventors: Ji-Won Lee, Yoon-Ho Jun, Jae-Man Choi, Sang-Min Lee
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Patent number: 7118694Abstract: A mixture Ia which comprises a composition IIa consisting of a) 1 to 95% by weight of a solid III, preferably a basic solid III, having a primary particle size of 5 nm to 20 microns, and b) 5 to 99% by weight of a polymeric mass IV obtainable by polymerizing b1) 5 to 100% by weight, based on the mass IV of a condensation product V of ?) at least one compound VI which is capable to react with a carboxylic acid or a sulfonic acid or a derivative thereof or a mixture of two or more thereof, and ?) at least one mole per mole of the compound VI of a carboxylic acid or a sulfonic acid VII which exhibits at least one radically polymerizable functional group, or a derivative thereof or a mixture of two or more thereof and b2) 0 to 95% by weight, based on the mass IV, of a further compound VIII having an average molecular weight (number average) of at least 5000 and having polyether segments in the main or side chain, wherein the proportion by weight of the composition IIa in the mixture Ia is 1 to 100% by weighType: GrantFiled: April 29, 2002Date of Patent: October 10, 2006Assignee: BASF AktiengesellschaftInventors: Bernd Bronstert, Helmut Möhwald
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Patent number: 7112549Abstract: A low-thermal-expansion, rigid and wear-resistant ceramic is provided. The low-thermal-expansion ceramic of the invention includes 60 vol % to 99.9 vol % of at least one selected from the group consisting of cordierite, spodumene and eucryptite and 0.1 vol % to 40 vol % of at least one selected from the group consisting of carbides, nitrides, borides and silicides of group IVa elements, group Va elements and group VIa elements, and boron carbide. The ceramic has a porosity of 0.5% or less and a thermal expansion coefficient, at 10° C. to 40° C., of 1.5×10?6/° C. or less.Type: GrantFiled: September 20, 2001Date of Patent: September 26, 2006Assignee: Sumitomo Metal Industries, Ltd.Inventors: Yasuki Yoshitomi, Tadahisa Arahori
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Patent number: 7022175Abstract: An initial solids mixture for a later organic coating, such as pigmented coatings, films, priming coats, etc., e.g., for a coil coating method in which an initial solids mixture is applied to a substrate, e.g., broad strip, and this is thereby pre-coated, wherein the initial solids mixture includes, as additive particles, boron carbide and/or silicon carbide and/or compounds of transition elements or lanthanides, the electrical conductivity of which is selected to be in the metallic range (?>102 1/?cm and ?<107 1/?cm), during the later coating, the additive particles have a continuous physical connection in at least one spatial direction.Type: GrantFiled: November 21, 2001Date of Patent: April 4, 2006Assignee: DaimlerChrysler AGInventor: Anita Marten
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Patent number: 7008564Abstract: A solid molecular composite polymer-based electrolyte is made for batteries, wherein silicate compositing produces a electrolytic polymer with a semi-rigid silicate condensate framework, and then mechanical-stabilization by radiation of the outer surface of the composited material is done to form a durable and non-tacky texture on the electrolyte. The preferred ultraviolet radiation produces this desirable outer surface by creating a thin, shallow skin of crosslinked polymer on the composite material. Preferably, a short-duration of low-medium range ultraviolet radiation is used to crosslink the polymers only a short distance into the polymer, so that the properties of the bulk of the polymer and the bulk of the molecular composite material remain unchanged, but the tough and stable skin formed on the outer surface lends durability and processability to the entire composite material product.Type: GrantFiled: July 11, 2002Date of Patent: March 7, 2006Assignee: Battelle Energy Alliance, LLCInventors: Mason K. Harrup, Frederick F. Stewart, Eric S. Peterson
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Patent number: 6911163Abstract: A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio of 0.001 to 0.190.Type: GrantFiled: March 27, 2003Date of Patent: June 28, 2005Assignee: Sumitomo Metal Mining Co., Ltd.Inventor: Yoshiyuki Abe
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Patent number: 6884314Abstract: The present invention relates generally to conductive, silicone-based compositions, with improved initial adhesion and reduced micro-voiding. More specifically, the present invention relates to a conductive, silicone-based composition, which includes a polyorganosiloxane, a silicone resin, and a conductive filler component.Type: GrantFiled: April 23, 2001Date of Patent: April 26, 2005Assignee: Henkel CorporationInventors: Robert P. Cross, Lester D. Bennington
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Patent number: 6849207Abstract: A silicon nitride sintered material containing a silicon nitride component and silicon carbide having an average particle size of 1 ?m or less in an amount of at least 1 mass % and less than 4 mass %, based on 100 mass % of the silicon nitride component. The carbide is dispersed in the silicon nitride component, and the silicon nitride sintered material has a thermal expansion coefficient of at least 3.7 ppm/° C. between room temperature and 1,000° C. The silicon nitride component contains a rare earth element in an amount of 15-25 mass % as reduced to a certain oxide thereof and Cr in an amount of 5-10 mass % as reduced to a certain oxide thereof, and a crystalline phase is present in intergrain regions of the sintered material.Type: GrantFiled: December 21, 2001Date of Patent: February 1, 2005Assignee: NGK Spark Plug Co., Ltd.Inventors: Kouji Funaki, Katsura Matsubara, Hiroki Watanabe, Masaya Ito
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Patent number: 6846566Abstract: A transparent conductive layer composition, a transparent conductive layer formed of the composition, an image display having the transparent conductive layer are provided. The transparent conductive layer composition contains a composition for a conductive layer and a composition for a transparent coating layer formed on the conductive layer. The transparent coating layer composition includes an amino compound, such as 3-aminopropyltrimethoxysilane, 3-aminopropylmethyldimethoxysilane, N-(6-aminoethyl)-3-aminopropyltrimethoxysilane, and p-aminophenyltrimethoxysilane, a metal compound, such as tetraethyl orthosilicate, and a polar solvent. The transparent conductive layer formed of the composition has a low resistance and strong film hardness and is less reflective and cost effective.Type: GrantFiled: January 13, 2003Date of Patent: January 25, 2005Assignee: Samsung SDI Co., Ltd.Inventor: Kangil Seo
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Patent number: 6846681Abstract: The present invention is directed to a silicon substrate having a monolayer formed by an electrochemically-induced reaction between silicon hydride moieties on the silicon surface and optionally substituted alkynes covalently bound to the surface of the silicon substrate and to a method for electrochemically producing such a functionalized silicon substrate. The method of forming a covalently bound monolayer on a silicon surface comprises the steps of contacting the silicon surface with a C2-C24 alkyne and electrografting optionally substituted alkynes to the silicon surface.Type: GrantFiled: July 19, 2002Date of Patent: January 25, 2005Assignee: Purdue Research FoundationInventors: Jillian M. Buriak, Michael P. Stewart, Edward Robins
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Patent number: 6812065Abstract: Provided is an anisotropic conductive paste in which an aqueous solution obtained by admixing the anisotropic conductive paste with purified water has an ionic conductivity of 1 mS/m or less; the B stage-reduced composition has a viscosity of 50 to 10000 Pa.s at 80 to 100° C.; and the cured matter of the anisotropic conductive paste has a linear expansion coefficient of 10×10−5 mm/mm/° C. or less at 0 to 100° C., a heat deformation temperature Tg of 100° C. or higher, a water absorption coefficient of 2 mass % or less and a specific resistance of 1×109&OHgr;.cm or more.Type: GrantFiled: November 30, 2000Date of Patent: November 2, 2004Assignees: Mitsui Chemicals, Inc., Sharp Kabushiki KaishaInventor: Tadashi Kitamura
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Patent number: 6797199Abstract: In high-tech fields such as electronics, the development of new high performance materials which differ from conventional materials has received much attention. An object of the present invention is to provide a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Atoms of an element from group 4B of the periodic table are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table.Type: GrantFiled: August 8, 2002Date of Patent: September 28, 2004Assignees: Ishikawajima-Harima Heavy Industries Co., Ltd., Kazuo TsumurayaInventors: Haruki Eguchi, Akihiko Suzuki, Satoshi Takahashi, Kaoru Miyahara, Tohru Tanaka, Shigemitsu Kihara, Kazuo Tsumuraya
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Patent number: 6787239Abstract: A material usable for the electrodes and the dielectric layer plasma display panels and capable of reducing the occurrence of yellowing and a high-image-quality plasma display panel using the material are provided. Using glass powder containing 25 to 50 wt % of Bi2O3, 5 to 35 wt % of B2O3, 10 to 20 wt % of ZnO, 5 to 20 wt % of BaO, 0 to 15 wt % of SiO2 and 0 to 10 wt % of Al2O3, the electrodes and the dielectric layer of a plasma display panel are formed.Type: GrantFiled: November 27, 2002Date of Patent: September 7, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshio Fujii, Tatsuo Mifune
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Patent number: 6783692Abstract: A heat softening thermally conductive composition comprises: a matrix comprising a silicone resin, and a thermally conductive filler. The composition can be used as a thermal interface material in electronic devices. The composition is formulated to have any desired softening temperature.Type: GrantFiled: October 17, 2002Date of Patent: August 31, 2004Assignee: Dow Corning CorporationInventor: Dorab Edul Bhagwagar
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Patent number: 6776927Abstract: An oxynitride phosphor activated by a rare earth element, represented by the formula CaxSi12−(m+n)Al(m+n)OnN16−n: EuyDyz, wherein stabilizing metal (Ca) is substituted partially by Eu or Eu and Dy where 0.3<x<1.5, 0.01<y<0.7, 0≦z<0.1, 0.6<m<3.0 and 0<n<1.5.Type: GrantFiled: April 8, 2003Date of Patent: August 17, 2004Assignee: National Institute for Materials ScienceInventors: Mamoru Mitomo, Tadashi Endo, Kyouta Ueda, Masakazu Komatsu
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Patent number: 6773635Abstract: Materials, both glass and glass-ceramic, that exhibit UV-induced changes in light transmission and electrical conductivity behavior. The materials consist essentially, in mole %, of 20-40% SiO2, 10-20% AlO1.5, 35-55% SiO2+AlO1.5, at least 30% CdF2, 0-20% PbF2, and/or ZnF2, 0-15% rare earth metal fluoride, and 45-65% total metal fluorides.Type: GrantFiled: February 26, 2001Date of Patent: August 10, 2004Assignee: Corning IncorporatedInventors: Nicholas F. Borrelli, Lauren K. Cornelius, Dennis W. Smith, Paul A. Tick
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Patent number: 6695984Abstract: The present invention provides: a fabrication method of a silicon carbide sintered body, including a step of fabricating a mixed powder slurry by dissolving or dispersing silicon carbide powder, at least one organic material composed of a nitrogen source, and at least one organic material composed of a carbon source or carbon powder in a solvent, a step of fabricating a green body by pouring the mixed powder slurry into a mold and drying and a step of filling pores in the green body by immersing the green body in high purity metallic silicon that has been heated to 1450 to 1700° C. in a vacuum atmosphere or inert gas atmosphere and melted, and generating silicon carbide by reacting silicon sucked up into the pores in the green body by capillary action with free carbon in the green body; and a silicon carbide sintered body obtained by a reaction sintering method, having a density of 2.90 g/cm3 or more and a volume resistivity of 100 &OHgr;·cm or less, and containing nitrogen at 150 ppm or more.Type: GrantFiled: January 31, 2001Date of Patent: February 24, 2004Assignee: Bridgestone CorporationInventors: Fumio Odaka, Yoshitomo Takahashi