Abstract: A metal lattice for a carbon dioxide scrubber includes a metal lattice body defining a plurality of intersecting ligaments, wherein nodes are formed at intersections of the plurality of intersecting ligaments, wherein a node density of the metal lattice body varies.

Abstract: A bioelectrode includes a conductive rubber electrode and a silver coating layer provided on the conductive rubber electrode and containing a silicone rubber and silver particles. The silver coating layer contains a modified silicone and contains ions for ion conduction among the silver particles.

Abstract: A chemical processing method to increase the brightness of a naturally sourced GCC. The process described herein employs a persulfate under certain heating and stirring conditions to effect a brightness change which can be on the order of about 8 points on the GE brightness scale and can move a GCC which is under a GE level of 80 to above a GE level of 80.

Abstract: It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.

Abstract: The present invention is one which provides a production process for lithium-silicate-system compound, the production process being characterized in that: a lithium-silicate compound being expressed by Li2SiO3 is reacted with a substance including at least one member of transition-metal elements that is selected from the group consisting of iron and manganese at 400-650° C. in a molten salt of a carbonate mixture comprising lithium carbonate and at least one member of alkali-metal carbonates that is selected from the group consisting of potassium carbonate, sodium carbonate, rubidium carbonate and cesium carbonate in a mixed-gas atmosphere including carbon dioxide and a reducing gas; and a positive-electrode active material for lithium-ion secondary battery that comprises a lithium-silicate-system compound being obtained by the aforesaid process.

Abstract: A lithium silicate-based compound according to the present invention is expressed by a general formula, Li(2?a+b)AaMn(1?x?y)CoxMySiO(4+?)Cl? (In the formula: “A” is at least one element selected from the group consisting of Na, K, Rb and Cs; “M” is at least one member selected from the group consisting of Mg, Ca, Al, Ni, Fe, Nb, Ti, Cr, Cu, Zn, Zr, V, Mo and W; and the respective subscripts appear to be as follows: 0?“a”<0.2; 0?“b”<1; 0<“x”<1; 0?“y”?0.5; ?0.25?“?”?1.25; and 0?“?”?0.05). The lithium silicate-based compound is used as a positive-electrode active material for secondary battery whose discharge average voltage is higher, and which is able to sorb and desorb lithium ions.

Abstract: Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.

Abstract: The present disclosure relates to a method for making an electrode composite material. In the method, a trivalent aluminum source, a doped element source, and electrode active material particles are provided. The trivalent aluminum source and the doped element source are dissolved in a solvent to form a solution having trivalent aluminum ions and doped ions. The electrode active material particles are mixed with the solution having the trivalent aluminum ions and doped ions to form a mixture. A phosphate radical containing solution is added to the mixture to react with the trivalent aluminum ions and doped ions, thereby forming a number of electrode composite material particles. The electrode composite material particles are heated.

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

Abstract: The present invention relates conductive nanostructured copolymer materials, such as thin film. In particular, the nanostructured copolymer material comprises plurality of chains substantially parallel to each other, each conductive chain comprising a plurality of conductive polyacetylene polymer blocks positioned along the chain and a plurality of polar poly(vinyl alcohol) polymer blocks in between the polyacetylene polymer blocks to form a pattern of alternatively repeating polyacetylene polymer blocks and poly(vinyl alcohol) polymer blocks and a ratio of polyacetylene polymer to poly(vinyl alcohol) polymer to provide the nanostructured copolymer material with conductivity of at least 1 S/cm. In some aspects, the invention relates to photoelectric devices comprising a nanostructured copolymer material and capable to convert light to electrical current.

Abstract: Disclosed are a photocatalyst of CoP2 loaded red phosphorus, a preparation method thereof, and a method for photocatalytic hydrogen production from water under visible light irradiation over the photocatalyst of CoP2 loaded red phosphorus.

Abstract: The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer contains a transition metal compound-containing nanoparticle comprising a transition metal compound containing one or more kinds selected from the group consisting of a transition metal carbide oxide, transition metal nitride oxide and transition metal sulfide oxide, wherein a protecting agent having a linking group and a hydrophobic organic group is connected to the transition metal compound by the linking group.

Abstract: A composition for forming an electrode. The composition includes a metal fluoride, such as copper fluoride, and a matrix material. The matrix material adds capacity to the electrode. The copper fluoride compound is characterized by a first voltage range in which the copper fluoride compound is electrochemically active and the matrix material characterized by a second voltage range in which the matrix material is electrochemically active and substantially stable. A method for forming the composition is included.

Abstract: Disclosed are a cathode material for a secondary battery, and a manufacturing method of the same. The cathode material includes a lithium manganese phosphate LiMnPO4/sodium manganese fluorophosphate Na2MnPO4F composite, in which the LiMnPO4 and Na2MnPO4F have different crystal structures. Additionally, the method of manufacturing the cathode material may be done in a single step through a hydrothermal synthesis, which greatly reduces the time and cost of production. Additionally, the disclosure provides that the electric conductivity of the cathode material may be improved through carbon coating, thereby providing a cathode material with excellent electrochemical activity.

Abstract: The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer contains a transition metal compound-containing nanoparticle comprising a transition metal compound containing one or more kinds selected from the group consisting of a transition metal carbide oxide, transition metal nitride oxide and transition metal sulfide oxide, wherein a protecting agent having a linking group and a hydrophobic organic group is connected to the transition metal compound by the linking group.

Abstract: A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt.

Abstract: For a Periodic Table Group 13 metal nitride semiconductor crystal obtained by epitaxial growth on the main surface of a base substrate that has a nonpolar plane and/or a semipolar plane as its main surface, an object of the present invention is to provide a high-quality semiconductor crystal that has a low absorption coefficient, is favorable for a device, and is controlled dopant concentration in the crystal, and to provide a production method that can produce the semiconductor crystal. A high-quality Periodic Table Group 13 metal nitride semiconductor crystal that has a precisely controlled dopant concentration within the crystal and a low absorption coefficient and that is thus favorable for a device, can be provided by inhibiting oxygen doping caused by impurity oxygen and having the Si concentration higher than the O concentration.

Abstract: Disclosed herein are compatibilized polyamide-poly(arylene ether) thermoplastic resin compositions, comprising: (a) about 10 to about 50 weight percent of a poly(arylene ether); (b) about 5 percent to about 20 percent of a hydrogenated block copolymer of an alkenyl aromatic compound and a conjugated diene and a copolymer of ethylene; (c) about 30 to about 60 percent of a biopolyamide; and wherein all weight percents are based on the total weight of the composition; and wherein the biomass carbon content of the resin composition is at least 13 percent as measured by ASTM D6866. Also disclosed are methods for making such resins and articles derived therefrom.

Abstract: A method of forming an electrode active material by reacting a metal fluoride and a reactant. The reactant can be a metal oxide, metal phosphate, metal fluoride, or a precursors expected to decompose to oxides. The method includes a milling step and an annealing step. The method can alternately include a solution coating step. Also included is the composition formed following the method.

Abstract: A composition for forming an electrode. The composition includes a metal fluoride compound doped with a dopant. The addition of the dopant: (i) improves the bulk conductivity of the composition as compared to the undoped metal fluoride compound; (ii) changes the bandgap of the composition as compared to the undoped metal fluoride compound; or (iii) induces the formation of a conductive metallic network. A method of making the composition is included.

Abstract: A composition for forming an electrode. The composition includes a metal fluoride, such as copper fluoride, and a matrix material. The matrix material adds capacity to the electrode. The copper fluoride compound is characterized by a first voltage range in which the copper fluoride compound is electrochemically active and the matrix material characterized by a second voltage range in which the matrix material is electrochemically active and substantially stable. A method for forming the composition is included.

Abstract: An active material comprises a core particle containing LiCo(1-x)MxO2 and/or Li(Mn(1-y)My)2O4, and a coating part covering at least part of a surface of the core particle, while the coating part contains LiVOPO4. Here, M is at least one element selected from the group consisting of Al, Mg, and transition elements, 0.95?x?0, 0.2?y?0, and V in LiVOPO4 may partly be substituted by at least one element selected from the group consisting of Ti, Ni, Co, Mn, Fe, Zr, Cu, Zn, and Yb.

Abstract: A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.

Abstract: Disclosed is lithium iron phosphate having an olivine crystal structure, wherein the lithium iron phosphate has a composition represented by the following Formula 1 and carbon (C) is coated on the particle surface of the lithium iron phosphate containing a predetermined amount of sulfur (S). Li1+aFe1?xMx(PO4?b)Xb??(1) (wherein M, X, a, x, and b are the same as defined in the specification).

Abstract: A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers.

Abstract: Disclosed herein is a reduced graphene oxide doped with a dopant, and a thin layer, a transparent electrode, a display device and a solar cell including the reduced graphene oxide. The reduced graphene oxide doped with a dopant includes an organic dopant and/or an inorganic dopant.

Abstract: The present invention provides a positive electrode material for a lithium secondary battery comprising a compound represented by the following Formula 1: LiMn1-xMxP1-yAsyO4??[Formula 1] wherein 0<x?0.1, 0<y?0.1, and M is at least one metal selected from the group consisting of magnesium (Mg), titanium (Ti), nickel (Ni), cobalt (Co), and iron (Fe). Positive electrode materials of the present invention, when used as a positive electrode material in a lithium secondary battery, provides increased discharge potential of the battery due to its high discharge capacity, excellent cycle characteristics and charge/discharge efficiency, and high discharge potential with respect to lithium.

Abstract: Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly(benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Abstract: According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal.

Abstract: Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

Abstract: Disclosed is a mixed material of lithium iron phosphate and carbon, which contains secondary particles as aggregates of lithium iron phosphate primary particles and a fibrous carbon which is present inside the secondary particles. An electrode containing such a mixed material, a battery comprising such an electrode, a method for producing such a mixed material, and a method for producing a battery are also disclosed.

Abstract: A copper-carbon composition including copper and carbon, wherein the copper and the carbon form a single phase material, and wherein the carbon does not phase separate from the copper when the material is heated to a melting temperature.

Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.

Abstract: A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber.

Abstract: The invention provides electrode active materials comprising lithium or other alkali metals, manganese, a +3 oxidation state metal ion, and optionally other metals, and a phosphate moiety. Such electrode active materials include those of the formula: AaMnbMIcMIIdMIIIePO4 wherein (a) A is selected from the group consisting of Li, Na, K, and mixtures thereof, and 0<a?1; (b) 0<b?1; (c) MI is a metal ion in the +3 oxidation state, and 0<c<0.5; (d) MII is metal ion, a transition metal ion, a non-transition metal ion or mixtures thereof, and 0?d<1; (e) MIII is a metal ion in the +1 oxidation state and 0<e<0.5; and wherein A, Mn, MI, MII, MIII, PO4, a, b, c, d and e are selected so as to maintain electroneutrality of said compound.

Abstract: An ink for inkjet recording containing water, water-soluble organic solvent, water-dispersible resin, fluorochemical surfactant or derivative thereof, and coloring agent containing pigment, where the ink has a surface tension of 20-35 mN/m and viscosity of ?5 mPa·s at 25° C., total amount of the water-dispersible resin and the coloring agent in the ink is 5-40% by mass, and mass ratio A/B of the water-dispersible resin A to the coloring agent B is 0.5-4, where the ink is applied to a recording medium containing a support containing cellulose pulp, and one or more barrier layers disposed on a face of the support, and where the barrier layer contains ?30% by mass of inorganic pigment having refractive index of ?1.5, excluding aluminum hydrate, and ?10% by mass of inorganic pigment having a refractive index of <1.5.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: A wiring material contains copper, nitrogen, and a dopant which is more readily oxidized than copper in an Ellingham diagram, the dopant being added to the wiring material at a rate of not less than 0.5 at. % and not more than 10 at. %.

Abstract: Disclosed herein is a method for the preparation of metal phosphide nanocrystals using a phosphite compound as a phosphorous precursor. More specifically, disclosed herein is a method for preparing metal phosphide nanocrystals by reacting a metal precursor with a phosphite compound in a solvent. A method is also provided for passivating a metal phosphide layer on the surface of a nanocrystal core by reacting a metal precursor with a phosphite compound in a solvent. The metal phosphide nanocrystals have uniform particle sizes and various shapes.

Abstract: The present technology is able to provide a solid electrolyte cell that uses a positive electrode active material which has a high ionic conductivity in an amorphous state, and a positive electrode active material which has a high ionic conductivity in an amorphous state. The solid electrolyte cell has a stacked body, in which, a positive electrode side current collector film, a positive electrode active material film, a solid electrolyte film, a negative electrode potential formation layer and a negative electrode side current collector film are stacked, in this order, on a substrate. The positive electrode active material film is made up with an amorphous-state lithium phosphate compound that contains Li; P; an element M1 selected from Ni, Co, Mn, Au, Ag, and Pd; and O, for example.

Abstract: A magnetocaloric structure includes a magnetocaloric material and at least one protective layer. The magnetocaloric material has bar type or plank type. The protective layer is disposed on the magnetocaloric material.

Abstract: The present disclosure provides a nanotube solution being treated with a molecular additive, a nanotube film having enhanced adhesion property due to the treatment of the molecular additive, and methods for forming the nanotube solution and the nanotube film. The nanotube solution includes a liquid medium, nanotubes in the liquid medium, and a molecular additive in the liquid medium, wherein the molecular additive includes molecules that provide source elements for forming a group IV oxide within the nanotube solution. The molecular additive can introduce silicon (Si) and/or germanium (Ge) in the liquid medium, such that nominal silicon and/or germanium concentrations of the nanotube solution ranges from about 5 ppm to about 60 ppm.

Abstract: The present invention concerns electrode materials capable of redox reactions by electron and alkali-ion exchange with an electrolyte. The applications are in the field of primary (batteries) or secondary electrochemical generators, supercapacitors and light modulating systems of the electrochromic type.

Abstract: Nanocomposites of conductive, nanoparticulate polymer and electronically active material, in particular PEDOT and LiFePO4, were found to be significantly better compared to bare and carbon coated LiFePO4 in carbon black and graphite filled non conducting binder. The conductive polymer containing composite outperformed the other two samples. The performance of PEDOT composite was especially better in the high current regime with capacity retention of 82% after 200 cycles. Further improvement can be obtained if the porosity of the nanocomposites is enhanced. Hence an electrode produced from a composite made of conductive, nanoparticulate polymer, electronically active material, and sacrificial polymer, wherein the sacrificial polymer has been removed leaving pores has improved electrolyte and ion diffusion properties allowing the production of thicker electrodes.

Abstract: The present invention concerns electrode materials capable of redox reactions by electron and alkali-ion exchange with an electrolyte. The applications are in the field of primary (batteries) or secondary electrochemical generators, supercapacitors and light modulating systems of the electrochromic type.

Abstract: An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

Abstract: A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. The fine silver particles are produced by carrying out a fluid preparation step of preparing a reduction fluid, a silver reaction step, and a filtration/washing step. The reaction step is carried out by adding an aqueous silver nitrate fluid to a reduction fluid whose temperature has been increased to a range between 40 and 800 ° C. The aqueous silver nitrate fluid is added at a stretch. The composition containing fine silver particles is produced by dispersing the composition containing the fine silver particles in a polar fluid.

Abstract: An electrode for an electrochemical cell including an active electrode material and an intrinsically conductive coating wherein the coating is applied to the active electrode material by heating the mixture for a time and at a temperature that limits degradation of the cathode active material.

Abstract: Provided are a composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film. The composition for the oxide thin film includes a metal precursor and nitric acid-based stabilizer. The metal precursor includes at least one of a metal nitrate, a metal nitride, and hydrates thereof.

Abstract: A semiconductor nanoparticle aggregate containing semiconductor nanoparticles with a core/shell structure is formed by controlling with physical energy the aggregation state of an agglomerate from agglomerated semiconductor nanoparticles.