Abstract: The disclosure provides an organic electroluminescent display panel, and a method for fabricating the same. The organic electroluminescent display panel includes a substrate, and a pixel defining layer and a light emitting layer arranged on the substrate, wherein the pixel defining layer includes a first pixel defining layer arranged on the substrate, and a second pixel defining layer arranged on the first pixel defining layer; the first pixel defining layer includes a plurality of first opening areas, each first opening area defines a sub-pixel light emitting area, and the light emitting layer is arranged in the first opening areas; and the second pixel defining layer includes a plurality of second opening areas, each second opening area defines a virtual pixel area, and each virtual pixel area includes at least two adjacent sub-pixel light emitting areas in the same color.

Abstract: The present disclosure relates to an optical fiber capable of converting a wavelength of a light emitted from a light source and a backlight unit using the same. According to the present disclosure, it is possible to extract a light of a desired wavelength band or a desired color (for example, a white light) by connecting an optical fiber, to which a color conversion material is applied, to a single laser light emitting element that emits a light of a specific wavelength band.

Abstract: Disclosed is a method for fabricating the light emitting device packages. The method includes: mounting and arranging light emitting device units on a substrate; attaching wavelength converting members to the respective light emitting device units mounted and arranged on the substrate; filling a reflective material between the light emitting device units attached with the wavelength converting members to form a reflective member; and vertically cutting the reflective material such that the reflective material surrounds the individual light emitting device units attached with the wavelength converting members. Also disclosed are light emitting device packages fabricated by the method.

Abstract: A method of manufacturing a light emitting device includes providing a substrate, forming a plurality of photosensitive bumps over the substrate, forming a photosensitive layer over the plurality of photosensitive bumps, forming a buffer layer between the photosensitive layer and the plurality of photosensitive bumps, patterning the photosensitive layer to form a recess through the photosensitive layer to expose a surface, disposing an organic emissive layer on the surface, forming a metal containing layer over the organic emissive layer, and removing the patterned photosensitive layer.

Abstract: The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

Abstract: A display apparatus includes a substrate; a light-emitting diode on the substrate; a pixel separating layer surrounding the light-emitting diode; and a light dispersion layer on the light-emitting diode and the pixel separating layer.

Abstract: Provided is a power supply device, provided for a light source device which has a plurality of light-emitting bodies. The power supply device includes a circuit for controlling a current supplied to the light-emitting body. The power supply device also includes a control circuit for controlling a current from a power supply source, the control circuit being disposed at the central portion of the light source device. The power supply device additionally includes a cooling component capable of cooling surroundings by channeling a refrigerant, where the cooling component is provided on a back side of the light-emitting body. The power supply device also includes a heat transfer component connecting the cooling component and the control circuit to each other. The power supply device further includes an insulating component interposed between the heat transfer component and the control circuit at a state in contact with both.

Abstract: Aspects of the invention are directed to an electronic device package including an electronic device comprising a first contact point; a metal pad disposed to provide electrical connection to the first contact point; a substrate comprising a first face and a second face opposing the first face of the substrate, the first face of the substrate adjacent a face of the electronic device; and a VIA passing through the substrate from the second face of the substrate to the metal pad, the VIA exhibiting: a pass through extending through the substrate from the first face to the second face; a metal layer disposed within the pass through arranged to provide electrical connectivity to the metal pad from an area adjacent the second face of the substrate; and an electrically insulating first passivation layer disposed between the metal layer and the substrate arranged to provide electrical insulation between the substrate and the metal layer.

Abstract: An LED module A1 includes an LED chip 1, a lead group 4 including a lead 4A on which the LED chip 1 is mounted and a lead 4B spaced apart from the lead 4A, a resin package 2 covering part of the lead group 4, and mounting terminals 41 and 42 provided by part of the lead group 4 that is exposed from the resin package 2 and spaced apart from each other in direction x. The LED module further includes a mounting terminal 43 spaced apart from the mounting terminal 41 in direction y, and a mounting terminal 44 spaced apart from the mounting terminal 42 in direction y. This arrangement allows the LED module A1 to be mounted at a correct position on a circuit board.

Abstract: An optical package structure includes a first conductive frame, a second conductive frame, a light receiver, and a light-permeable package compound. The first and second conductive frames are arranged apart from each other and have a light entrance there-between. The light receiver includes a light receiving region and two soldering portions arranged on a surface thereof. The two soldering portions are respectively arranged at two opposite sides of the light receiving region, and are respectively soldered onto the first and second conductive frames, such that the light receiving region faces the light entrance. At least part of the first conductive frame, at least part of the second conductive frame, and the light receiver are embedded in the light-permeable package compound. The light receiver is configured to receive a light signal traveling through the light-permeable package compound and the light entrance.

Abstract: An OLED panel includes a substrate, a cover plate, an organic light-emitting layer arranged between the substrate and the cover plate, a water-blocking layer packing the organic light-emitting layer on a surface of the substrate, and a ring-like composite encapsulating material layer arranged between the substrate and the cover plate. The composite encapsulating material layer surrounds the water-blocking layer. The composite encapsulating material layer and the water-blocking layer are sealed between the substrate and the cover plate. The composite encapsulating material layer is made of a nano-resin material. A method for fabricating the OLED panel is also provided. The nano-resin material with better adhesion and toughness is used as a encapsulating material of the OLED panel to have compactness and properties of blocking water and oxygen, thereby replacing a dam and a getter and realizing a narrow-bezel encapsulation for OLEDs with a large size.

Abstract: An array substrate, a display panel, an encapsulation method for the display panel, and a display apparatus are provided. The array substrate comprises a display region and an encapsulation region divided into a first region away from the display region and a second region adjacent to the display region. The encapsulation region includes a metal layer configured only in the second region, a frit solution layer configured in both the first region and the second region, and a cutting edge configured in the first region. The array substrate which has been aligned and bonded with an encapsulation cover is cut along the cutting edge.

Abstract: A flexible organic light emitting device including a flexible substrate having an active area and a pad area; an organic light emitting diode layer disposed on the active area; an adhesive layer disposed on the organic light emitting diode layer; an encapsulation substrate disposed on the adhesive layer; a cover layer disposed between the active area and the pad area; and a back film disposed on a lower surface of the flexible substrate, further the encapsulation substrate has a curved upper surface outside the active area, also the cover layer decreases in thickness from the active area toward the pad area.

Abstract: Disclosed herein is a solid state imaging device including a support substrate; an imaging semiconductor chip having a pixel array disposed on the support substrate; and an image processing semiconductor chip disposed on the support substrate, wherein the imaging semiconductor chip and the image processing semiconductor chip are connected by through-vias, and interconnects formed on the support substrate.

Abstract: An electronic module includes a first insulation layer, at least one carrier having a first main surface, a second main surface situated opposite the first main surface, and side surfaces connecting the first and second main surfaces to one another, at least one semiconductor chip arranged on the second main surface of the carrier, wherein the semiconductor chip has contact elements, and a second insulation layer, which is arranged on the carrier and the semiconductor chip.

Abstract: Light emitting diode (LED) devices and methods. An example apparatus can include a substrate, one or more LEDs, light-transmissive encapsulation material, and a reflective material covering a portion of the encapsulation material to form a defined opening. The opening allows light emitted from an LED to pass through in a prescribed manner. In some embodiments, the apparatus can be subsequently treated to modify the surface having the opening. In other embodiments, the reflective material can be disposed on a lateral surface of the encapsulation material to reflect light in a desired direction.

Abstract: Provided are a light source circuit unit that improves light extraction efficiency, as well as an illuminator and a display that include such a light source circuit unit. The light source circuit unit includes: a circuit substrate having a wiring pattern on a surface thereof, the wiring pattern having light reflectivity, a circular pedestal provided on the circuit substrate, a water-repelling region provided at least from a peripheral edge portion of the pedestal to a part of a side face of the pedestal, and one or two or more light-emitting device chips mounted on the pedestal, and driven by a current that flows through the wiring pattern.

Abstract: A lighting apparatus according to an embodiment comprises: a circuit board; and a plurality of light emitting modules having first to third light source units for emitting different colors on the circuit board; a control unit for providing a current control signal for controlling a current of each of the first to third light source units; a driver for controlling currents of the first to third light source units with a current control signal of the control unit, and a memory unit for storing luminous flux deviation data of the first to third light source units of each of the plurality of light emitting modules, wherein the first light source unit includes a plurality of first light emitting devices for emitting red light, and the second light source unit includes a plurality of second light emitting devices for emitting green light, and the third light source unit includes a plurality of third light emitting devices for emitting blue light, and the control unit controls currents of the first, second, and thir

Abstract: A light-emitting component is provided including a functional layer stack having at least one light-emitting layer which is set up to generate light during the operation of the component, a first electrode and a second electrode, which are set up to inject charge carriers into the functional layer stack during operation, and an encapsulation arrangement having encapsulation material, which is arranged above at least one of the electrodes and the functional layer stack. At least one of the electrodes is transparent and contains a wavelength conversion substance and/or the encapsulation material is transparent and contains a wavelength conversion substance.

Abstract: A light source module includes a substrate, a first covering layer, a second covering layer, a luminous layer and a supporting base. The luminous layer is arranged between the first covering layer and the second covering layer. The luminous layer emits a light beam in response to a first current flowing through the first covering layer and a second current flowing through the second covering layer. The light beam is projected to surroundings through the substrate. The supporting base is electrically connected with the first covering layer and the second covering layer. The supporting base includes a circuit board and a passivation layer. When a portion of the light beam projected to the supporting base is reflected by the passivation layer, the portion of the light beam is projected to the surroundings through the substrate.

Abstract: An embodiment comprises: a substrate having a chip mounting region; first and second wiring layers disposed on the substrate around the chip mounting region so as to be spaced apart from each other; and a plurality of light emitting chips disposed on the chip mounting region, wherein the first wiring layer comprises a first wiring pattern disposed at one side of a reference line and having a first concave part, and a first extending pattern extending from the first wiring pattern to the other side of the reference line, the second wiring layer comprises a second wiring pattern disposed at the other side of the reference line and having a second concave part, and a second extending pattern extending from the second wiring pattern to one side of the reference line, and the reference line is a straight line passing through the center of the chip mounting region.

Abstract: A light-emitting device package of the embodiments includes a package body; at least one light emitting device above the package body; an adhesive layer between the at least one light emitting device and the package body; and an adhesive-layer-accommodating portion disposed in the package body for accommodating the adhesive layer therein, wherein the adhesive-layer-accommodating portion has a side surface disposed to be inclined at a predetermined angle relative to an imaginary vertical plane that extends in a thickness direction of the package body.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: A light emitting device includes a light emitting element, a light-transmissive member, a light guide member and a light reflective member. The light-transmissive member includes a first region directly above a top surface of the light emitting element, and a second region at a lateral side of the first region. The light guide member covers a lateral surface of the light emitting element and a bottom surface of the second region of the light-transmissive member. The light reflective member covers an outer surface of the light guide member. The light-transmissive member contains a fluorescent substance and a light scattering material that is not a fluorescent substance. A concentration of the fluorescent substance in the light-transmissive member is higher in the first region than in the second region. A concentration of the light scattering material in the light-transmissive member is higher in the second region than in the first region.

Abstract: A method is provided for fabricating an emissive display substrate with a light management system. The method provides a transparent first substrate with a top surface and forms a plurality of emissive element wells. The well sidewalls are formed from a light absorbing material or a light reflector material. In one aspect, a light blocking material film layer is formed overlying the first substrate top surface, and the emissive element sidewalls are formed in the light blocking material film layer. In another aspect, a transparent second substrate is formed overlying the first substrate top surface. Then, the emissive element wells are formed in the second substrate with via surfaces, and the light blocking material is deposited overlying the well via surfaces. Additionally, the light blocking material may be formed on the bottom surface of each well. An emissive display substrate with light management system is provided below.

Abstract: Embodiments of the invention include a package for a light emitting diode (LED). The package includes a lead frame, an LED, and an optically reflective but electrically non-conductive molding. The lead frame has a first lead frame part and a second lead frame part electrically isolated from the first lead frame part, each lead frame part having at least one raised pillar. The molding is disposed over the lead frame except over the pillars of the lead frame. The LED is mounted on at least one pillar and is electrically coupled to at least one pillar. The molding serves the purpose of a highly reflective, electrically conductive material like silver without being subject to tarnishing.

Abstract: A method of manufacturing a wavelength conversion member with improved capability of releasing heat from a fluorescent material is provided. The method of manufacturing the wavelength conversion member includes: disposing a fluorescent material paste containing a fluorescent material and a binder on a surface of a light-transmissive body; orienting face-down the surface where the fluorescent material paste is disposed, to settle the fluorescent material in the fluorescent material paste on a side opposite to another side of the fluorescent material paste, the another side being in contact with the light-transmissive body; and curing the binder in a state where the fluorescent material has been settled, to form a fluorescent material layer.

Abstract: A light emitting device and a manufacturing method therefor are disclosed. The light emitting device comprises: a patterned sapphire substrate (PSS) including a plurality of concave parts and protruding parts on the upper surface thereof; a buffer layer including a concave part buffer layer, which is positioned on the concave part, and a protruding part buffer layer, which is positioned on the side surface of the protruding part and dispersed and arranged in a plurality of island shapes; a lower nitride layer positioned on the buffer layer and the PSS and covering the protruding part; a void positioned on an interface between the side surface of the protruding part and the lower nitride layer; a first conductive type semiconductor layer positioned on the lower nitride layer; a second conductive type semiconductor layer positioned on the first conductive type semiconductor layer; and an active layer interposed between the first and second conductive type semiconductor layers.

Abstract: A light emitting element includes an n-side semiconductor layer, a p-side semiconductor layer, a plurality of holes, a first p-electrode, a second p-electrode and an n-electrode. The n-side semiconductor layer has a hexagonal shape in plan view. The p-side semiconductor layer has a hexagonal shape in plan view and provided over the n-side semiconductor layer. The holes are arranged in the p-side semiconductor layer so that the n-side semiconductor layer is exposed through the plurality of holes. The first p-electrode is in contact with the p-side semiconductor layer. The second p-electrode is arranged on the first p-electrode adjacent to a corner corresponding to one of vertices of the hexagonal shape. The second p-electrode has sides that are respectively parallel to sides defining the corner in plan view. The n-electrode is arranged over the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

Abstract: Disclosed is an optoelectronic semiconductor component (1) comprising a semiconductor member (2) that has a succession of semiconductor layers including an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region is located between the first semiconductor layer and the second semiconductor layer; the semiconductor member has a plurality of cavities (25) which extend through the second semiconductor layer and the active region; and from a bird's eye view onto the semiconductor member, the cavities are elongate and have a longitudinal axis (250).

Abstract: A photoluminescence sheet comprises a polymer sheet having particles of at least one photoluminescence material homogeneously distributed throughout its volume. The polymer sheet comprises a UV-curable polymer that is partially cured and which is thermally re-flowable before being fully cured by exposure to UV light.

Abstract: Disclosed are a display apparatus and a method of manufacturing the same. The display apparatus includes a light emitting part including a plurality of light emitting diodes; and a thin film transistor (TFT) panel part configured to drive the plurality of light emitting diodes. A first side of the light emitting part and a first side of the TFT panel part are coupled to each other so as to face each other. The plurality of light emitting diodes are electrically connected to the plurality of TFTs, respectively.

Abstract: An organic electroluminescent device comprising: a transparent support substrate having flexibility; a light emitting element disposed on the transparent support substrate and including a pair of electrodes and a luminescent layer disposed between the pair of electrodes; a sealing material layer disposed on the transparent support substrate so as to cover and seal the light emitting element; and a sealing substrate disposed on the sealing material layer, wherein based on an arithmetic average of roughness profile defined in JIS B 0601-1994, the surface roughness of a surface of the sealing substrate beside the sealing material layer has a smaller value than the surface roughness of the other surface of the sealing substrate, and the arithmetic average of roughness profile of the surface of the sealing substrate beside the sealing material layer and a thickness of the sealing material layer satisfy a requirement represented by the following formula (I): 0.002<(Ra/t)<0.

Abstract: In an organic EL display device that includes a TFT substrate (substrate) and an organic EL element (electroluminescent element) provided on the TFT substrate, a sealing film is provided that seals the organic EL element. The sealing film includes one or more layers of inorganic film. The thickness of a peripheral portion of at least one layer of inorganic film among the one or more layers of inorganic film is made thick. Further, a liquid repellent layer is provided covering the sealing film.

Abstract: This disclosure discloses an LED assembly. The LED assembly includes a transparent mount with a top surface and a bottom surface opposite to the top surface, an LED chip arranged on the top surface, an electrode plate, a first phosphor layer having a first phosphor, and a second phosphor layer having a second phosphor, wherein the transparent mount and the electrode plate substantially have a same width. The electrode plate is arranged on an edge of the top surface and electrically connected to the LED chip.

Abstract: A light-emitting-element mounting package includes a substrate and a frame that are each made of a metal. The substrate includes a front surface and a back surface that oppose each other, and is provided with a mounting portion for a light emitting element at the front surface. The frame stands on the front surface of the substrate and includes an inner side surface that surrounds the mounting portion and an outer side surface. A substrate-side end portion of the frame includes a curved inclined surface (inclined portion) in a region near the outer side surface. The curved inclined surface is inclined toward a center of the frame in a thickness direction. A silver solder (joining material) is provided between the front surface of the substrate and the frame.

Abstract: An organic EL display device includes a TFT substrate (substrate) and an organic EL element (electroluminescent element) provided on the TFT substrate, a first leveled layer provided covering the organic EL element; an inorganic layer provided on the first leveled layer; and a second leveled layer provided on the inorganic layer. Further, the first and second leveled layers are configured by diisocyanate.

Abstract: A light emitting apparatus includes a first radiation source without a dome, a substantially transparent and light transmissive optic device, a lens, a down conversion material, and a heat sink. The optic device is devoid of scattering particles and phosphor, and includes a planar top surface distal the first radiation source, a bottom surface proximal the first radiation sources, and a transparent sidewall extending between the top surface and the bottom surface. The down conversion material includes a flat layer including phosphor that is disposed on the planar top surface of the optic device between the lens and the radiation source. The heat sink, upon which the radiation source is mounted, has a recess formed therein in which an air space is defined between a boundary of the recess and the optic device.

Abstract: The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.

Abstract: The embodiment relates to a semiconductor device package, a method of manufacturing the semiconductor device package, and a light source apparatus. According to another embodiment, there is provided a light emitting device package which includes a package body (110) including a frame (111, 112) and a body (113); a light emitting device (120) including first and second bonding parts (121, 122) and disposed on the body (113); a reflective resin layer disposed between the light emitting device and a side surface of a cavity (C) formed in the body; a transparent resin layer on the light emitting device; and a phosphor layer disposed on the transparent resin layer while being spaced apart from the light emitting device.

Abstract: A method of manufacturing a light emitting device includes: preparing a light-transmissive member including a light reflective sheet that has a through-hole, and a color conversion material layer that is composed of a light-transmissive resin containing a color conversion material and disposed in the through-hole, preparing a light emitting element, fixing the color conversion material layer to the light emitting element, covering a side surface of the light emitting element with a light-reflective member, and cutting the light-reflective member and light-reflective sheet.

Abstract: A memory includes: a first electrode comprising a top boundary and a sidewall; a resistive material layer, disposed above the first electrode, that comprises at least a first portion and a second portion coupled to a first end of the first portion; and a second electrode disposed above the resistive material layer, wherein the first portion of the resistive material layer extends along the top boundary of the first electrode and the second portion of the resistive material layer extends along an upper portion of the sidewall of the first electrode.

Abstract: A light-emitting device includes: one or more first light-emitting elements each having a peak wavelength in a range from 430 nm to less than 490 nm; a second light-emitting element having a peak wavelength Y in a range from 490 nm to less than a wavelength X; a third light-emitting element having a peak wavelength Z in a range from more than the wavelength X to 570 nm; and a phosphor or a fourth light-emitting element having a peak wavelength in a range from 580 nm to 680 nm. At least one of the second and third light-emitting elements is connected to at least one of the first light-emitting elements in series. The wavelength X is in a range from more than 490 nm to less than 570 nm with an absolute value of difference between |X?Y| and |X?Z| being 10 nm or less.

Abstract: Methods for forming a semiconductor device having dual Schottky barrier heights using a single metal and the resulting device are provided. Embodiments include a semiconductor substrate having an n-FET region and a p-FET region each having source/drain regions; a titanium silicon (Ti—Si) intermix phase Ti liner on an upper surface of the n-FET region source/drain regions; and titanium silicide (TiSi) forming an upper surface of the p-FET region source/drain regions.

Abstract: An aircraft LED light unit comprises at least one printed circuit board which comprises at least one metal core layer and at least one dielectric layer, and at least one LED disposed on the printed circuit board and which comprises an anode and a cathode for electrically coupling to a power source. One of the anode and cathode of the at least one LED is connected to an electrical conductor which is disposed on the dielectric layer and is coupled to a first terminal of the power source, wherein the dielectric layer electrically isolates the electrical conductor from the metal core layer, and the other one of the anode and cathode of the at least one LED is connected to the metal core layer of the at least one printed circuit board, wherein the metal core layer is coupled to a second terminal of the power source.

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Abstract: A backlight module, a display panel and a display device. The backlight module includes a first light transmission substrate arranged on a light-emitting face. A projection of the first light transmission substrate on the light-emitting face coincides with the light-emitting face. A first reflection mirror and a second reflection mirror are also arranged on the first light transmission substrate. The first and second reflection mirrors are spaced apart and facing each other, and the second reflection mirror is arranged in such a way as to enable vertical emergent light on the light-emitting face to be incident to the first reflection mirror after undergoing a total reflection. The first reflection mirror is arranged in such a way as to enable light reflected by the second reflection mirror to exit after undergoing a total reflection. A plurality of light transmission holes are evenly distributed on the second reflection mirror.

Abstract: An organic EL device as an the electro-optical device includes a reflective layer; an opposite electrode as a semitransparent reflective layer; and a first luminescence pixel and a second luminescence pixel as first pixels, and a third luminescence pixel as a second pixel respectively having an optical path length adjustment layer and a functional layer provided between the reflective layer and the opposite electrode; in which the optical path length adjustment layer of the first luminescence pixel includes a fourth insulation layer as a luminance adjustment layer and the optical path length adjustment layer of the third luminescence pixel does not include a third insulation layer.

Abstract: A method of manufacturing a semiconductor power package includes: providing a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing; bonding a power semiconductor chip on the electrically conducting chip carrier; and applying a covering material so as to embed the power semiconductor chip. The covering material has an elastic modulus less than an elastic modulus of a material of the pre-molded chip housing and/or a thermal conductivity greater than a thermal conductivity of the material of the pre-molded chip housing and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.